CN102938637A - Ultra-wideband low-noise amplifier circuit - Google Patents

Abstract

The invention belongs to the technical field of radio frequency integrated circuits, and particularly relates to an ultra wide band low noise amplifier circuit which comprises a first field effect transistorSecond field effect transistorFirst resistanceSecond resistanceThird resistanceFirst inductanceFirst capacitor connected to groundAnd a second capacitor. The low noise amplifier circuit can provide low noise coefficient, high and flat gain and good input and output matching in an ultra wide frequency band.

Description

The ultra-wideband low-noise amplifier circuit

Technical field

The invention belongs to the radio frequency integrated circuit design field, relate to a kind of ultra-wideband low-noise amplifier circuit that is applied to ultra-wideband communication system.

Background technology

In recent years, the wireless demand for the Multiband-multimode that can cover simultaneously multiple communication standard grows with each passing day.Various communication standards, such as digital television broadcasting (DVB), the mobile phone wireless network, the GPS global positioning system, the function of satellite communication network etc. is integrated, radio system has been proposed the requirement of Multiband-multimode compatibility.The integrated broadband radio receiver that multiple communication standard requires that can satisfy of exploitation frequency coverage (software radio SDR) even 10GHz (ultra-wideband communications UWB) from hundred megahertz low frequencies to 6GHz has become study hotspot.

As the nucleus module in the broadband receiver front-end circuit, low noise amplifier must satisfy input matched well in the broadband of upper GHz simultaneously to reduce return loss, high and smooth gain is to suppress late-class circuit to the noise contribution of whole receiver, and low noise factor is to improve the sensitivity of receiver.Traditional wideband low noise amplifier primary structure has: distributed amplifier; Source degenerate amplifier based on the wideband filtered network; Resistive shunt-feedback formula amplifier; Cathode-input amplifier based on the broadband noise cancellation technology.Yet distributed amplifier is because multitube cascade power consumption large tracts of land is large; The additional noise of introducing owing to the loss of on-chip inductor electric capacity in the filter network based on the source degenerate amplifier of wideband filtered network is difficult to obtain lower noise factor, and because integrated a plurality of spiral inductances on the sheet, chip area is larger; To sacrifice amplifier noise for the feedback resistance that obtains matching properties in the resistive shunt-feedback formula amplifier, matching properties and noise characteristic are difficult to satisfactory to both parties; Cathode-input amplifier based on the broadband noise cancellation technology is difficult to provide high-gain, and self high noise characteristic of common gate structure is with the effect of attenuating noise cancellation technology.

Summary of the invention

The object of the invention is to solve above-mentioned problems of the prior art, a kind of ultra-wideband low-noise amplifier circuit that is applied to the radio-frequency transmitter chip is provided.

According to an aspect of the present invention, provide a kind of ultra-wideband low-noise amplifier circuit to comprise the first field effect transistor Q ₁, the second field effect transistor Q ₂, the first resistance R ₁, the second resistance R ₂, the 3rd resistance R ₃, the first inductance L ₁, the second capacitor C ₂The first capacitor C with ground connection ₁

Described the first capacitor C ₁With described the first inductance L ₁(Vin) is connected with a signal input port;

Described the first inductance L ₁Respectively with described the first field effect transistor Q ₁Grid and described the first resistance R ₁Connect;

Described the first field effect transistor Q ₁Drain electrode respectively with described the second field effect transistor Q ₂Grid and described the second resistance R ₂Connect the direct ground connection of source electrode;

Described the first field effect transistor Q ₁Grid and described the second field effect transistor Q ₂Source electrode between connect described the first resistance R ₁

Described the second field effect transistor Q ₂Drain electrode and the second field effect transistor Q ₂Grid between connect described the second resistance R ₂

Described the second field effect transistor Q ₂Source electrode and ground between connect by described the 3rd resistance R ₃With described the second capacitor C ₂The parallel network that consists of; Described the second field effect transistor Q ₂Source electrode also with described resistance R ₁Connect.

Described the second field effect transistor Q ₂Drain electrode connect a signal output part (Vout), simultaneously as power port by the outer choke circuit L of sheet _CConnect external voltage source V _Cc

Amplifier circuit in low noise provided by the invention can provide low-noise factor in ultrabroad band, the input-output adapt ation that high and smooth gain is become reconciled.

Description of drawings

Fig. 1 is the ultra-wideband low-noise amplifier integrated circuit figure that the embodiment of the invention provides;

Fig. 2 is example S ₂₁With NF simulation result figure;

Fig. 3 is example S ₁₁And S ₂₂Simulation result figure.

Embodiment

As shown in Figure 1, the ultra-wideband low-noise amplifier circuit that provides of the embodiment of the invention comprises the first field effect transistor Q ₁, the second field effect transistor Q ₂, the first resistance R ₁, the second resistance R ₂, the 3rd resistance R ₃, the first inductance L ₁, the second capacitor C ₂The first capacitor C with ground connection ₁

The first capacitor C ₁With the first inductance L ₁(Vin) is connected with a signal input port.Specifically: input port (Vin) connects the first capacitor C that is parallel to ground ₁First inductance L of connecting simultaneously ₁, the first inductance L ₁The other end connect the first field effect transistor Q ₁Grid.The first capacitor C in parallel ₁With series connection the first inductance L ₁Connect input port (Vin) and the first field effect transistor Q ₁Grid, and the first field effect transistor Q ₁The grid source between the parasitic capacitance acting in conjunction, greatly expanded input coupling bandwidth, make simultaneously the integrated circuit noise factor in broadband near the minimal noise coefficient, realize noise optimization.

The first inductance L ₁Respectively with the first field effect transistor Q ₁Grid and the first resistance R ₁Connect;

The first field effect transistor Q ₁Drain electrode respectively with the second field effect transistor Q ₂Grid and the second resistance R ₂Connect the direct ground connection of source electrode; Wherein, the first field effect transistor Q ₁Drain electrode and the second field effect transistor Q ₂Grid link to each other, form that can cascade provides the integrated circuit high-gain.The first field effect transistor Q ₁The direct ground connection of source electrode, guarantee the first field effect transistor Q ₁Low noise contribution to integrated circuit.

The first field effect transistor Q ₁Grid and the second field effect transistor Q ₂Source electrode between connect the first resistance R ₁, form thus feedback loop, the coupling of the resistive subparticipation input impedance of input impedance is provided.

The second field effect transistor Q ₂Drain electrode and the second field effect transistor Q ₂Grid between connect the second resistance R ₂, as the second field effect transistor Q ₂The grid leak negative feedback network, wideband gain is provided, the resistive part of output impedance is provided simultaneously, participate in the output coupling.Described the second field effect transistor Q ₂Source electrode also with described resistance R ₁Connect

The second field effect transistor Q ₂Source electrode and ground between connect by the 3rd resistance R ₃With the second capacitor C ₂The parallel network that consists of is as the second field effect transistor Q ₂The source is to the source degeneracy negative feedback shunt peaking network between ground, and the inhibition low frequency is crossed high-gain and compensated simultaneously high-frequency gain, has improved the gain flatness of circuit in whole working band.

The second field effect transistor Q ₂Drain electrode connect a signal output part (Vout), simultaneously as power port by the outer choke circuit L of sheet _CConnect external voltage source V _CcChoke circuit L _CPlay the inhibition AC signal, the effect of perfectly straight stream signal.

The first resistance R ₁, the second resistance R ₂With the 3rd resistance R ₃Acting in conjunction partly provides direct current biasing for the low noise amplifier chip.

Below in conjunction with an instantiation ultra-wideband low-noise amplifier circuit that the embodiment of the invention provides is described.Relevant circuit element parameter is as follows:

Field effect transistor adopts pHEMT technique, and channel length is 0.5 μ m:

L ₁＝1.4nH，C ₁＝0.3pF；

R ₁＝602Ω，R ₂＝262Ω，R ₃＝40Ω，C ₂＝1pF；

$W_{Q_1}=8\&times;25\mathrm{\&mu;m},$ ${\mathrm{<figure-callout\; id="2"\; label="W\; Q"\; filenames="HDA0000083300530000021.png"\; state="\{\{state\}\}">W</figure-callout>}}_{Q_{}}=8\&times;25\mathrm{\&mu;m};$

Circuit voltage Vcc is 2.5V, current drain 17mA, and total power consumption is 42.5mW.Chip layout is of a size of 0.85mm * 0.31mm=0.26mm ²

The electromagnetic-field simulation result of circuit such as Fig. 2, shown in Figure 3, circuit working frequency range 0.1-6GHz, Input matching S ₁₁Less than-10.7dB, output matching S ₂₂Less than-10dB, gain is 16 ± 0.2dB, noise factor NF is 1.85 ± 0.35dB.Can be found out that by simulation result the gain of this circuit is high and smooth, input-output adapt ation is fine.

The present invention comprises two field effect transistor, three resistance, and an inductance, two electric capacity, simple in structure, low in energy consumption, integrated level is high, need not extra biasing circuit in the sheet, and the chip layout area is little; Outside single voltage source divides the amplifier circuit in low noise chip section by choke circuit powers.This amplifier circuit in low noise can both provide low-noise factor in ultrabroad band, the input-output adapt ation that high and smooth gain is become reconciled.

Above specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; below only be specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (1)

1. a ultra-wideband low-noise amplifier circuit is characterized in that, comprising:

The first field effect transistor

, the second field effect transistor

, the first resistance

, the second resistance

, the 3rd resistance

, the first inductance

, the second electric capacity

The first electric capacity with ground connection

Described the first electric capacity

With described the first inductance

(Vin) is connected with a signal input port;

Described the first inductance

Respectively with described the first field effect transistor

Grid and described the first resistance

Connect;

Described the first field effect transistor Drain electrode respectively with described the second field effect transistor

Grid and described the second resistance Connect the direct ground connection of source electrode;

Described the first field effect transistor

Grid and described the second field effect transistor

Source electrode between connect described the first resistance

Described the second field effect transistor

Drain electrode and the second field effect transistor

Grid between connect described the second resistance

Described the second field effect transistor

Source electrode and ground between connect by described the 3rd resistance With described the second electric capacity

The parallel network that consists of; Described the second field effect transistor

Source electrode also with described resistance

Connect;

Described the second field effect transistor

Drain electrode connect a signal output part (Vout), simultaneously as power port by the outer choke circuit of sheet

Connect external voltage source

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