CN101350592A - Ultra-wideband low noise amplifier - Google Patents
Ultra-wideband low noise amplifier Download PDFInfo
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- CN101350592A CN101350592A CNA2008100224045A CN200810022404A CN101350592A CN 101350592 A CN101350592 A CN 101350592A CN A2008100224045 A CNA2008100224045 A CN A2008100224045A CN 200810022404 A CN200810022404 A CN 200810022404A CN 101350592 A CN101350592 A CN 101350592A
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Abstract
The present invention discloses an ultra-wideband low-noise amplifier, and consists of a matching stage, an amplifying stage and a loading stage, which are orderly connected. The amplifying stage consists of four MOS tubes and two feedback circuits, and is a four-port network with two input ends and two output ends; wherein, the first input end is connected with the grid electrode of the first MOS tube; the first output end is connected with the drain electrode of the second MOS tube; the first feedback circuit is connected between the grid electrode of the first MOS tube and the drain electrode of the second MOS tube; the second input end is connected with the grid electrode of the third MOS tube; the second output end is connected with the drain electrode of the fourth MOS tube; the second feedback circuit is connected between the grid electrode of the third MOS tube and the drain electrode of the fourth MOS tube; the drain ends of the first MOS tube and the third MOS tube, which have the same source, are respectively connected with the source ends of the third MOS tube and the fourth MOS tube. The amplifier has the advantages of simple structure and low energy consumption, and can satisfy the functional requirements of the ultra-wideband communication system in the whole frequency range.
Description
Technical field
The invention belongs to the radio frequency integrated circuit design field, particularly be applied to a kind of ultra-wideband low-noise amplifier of ultra-wideband communication system.
Background technology
At present, ultra-wideband communications mainly contains dual mode, and a kind of is base band burst pulse form, carries information by modes such as PPM; Another kind is the bandpass modulation carrier format, and by MB-OFDM, modulation systems such as DS-UWB are carried information.In the communication system of these two kinds of schemes, receiver has all used wideband low noise amplifier (LNA) module.
The implementation of traditional CMOS broadband LNA adopts distributed and resistance negative feedback structure in parallel usually.
The characteristics of following these two kinds of structures of surface analysis.
(1) distributed amplifier: this kind amplifier can provide good input coupling, and more smooth gain in the wide frequency range is provided, and higher third order intermodulation point IIP
3But because need the transmission line of high Q value, this just makes chip area strengthen, and is unfavorable for reducing cost; In addition, because the transistorized gain characteristic of CMOS, distributed amplifier can not reach very high gain, about the about 8dB of its average gain.This is not enough in some application scenario to receiving the UWB signal.And distributed amplifier also consumes too much dc power, also do not meet the requirement of low-power consumption UWB system.
(2) resistance amplifier with parallel negative-feedback: this kind amplifier can provide broadband input coupling, comes noise-reduction coefficient by feedback.But because the transistorized low mutual conductance of CMOS, cause to consume big power consumption and go the single-stage loop gain that reaches higher, also can't adapt to the requirement of low-power consumption UWB system.And, then may cause stability problem as adopting multistage amplification to improve gain.
In existing UWB LNA technology, mainly be divided into two kinds of topological structures.
A kind of is to adopt the one-level structure for amplifying, and dual mode is arranged.First kind of mode is single-ended cascade and utilizes connection peaking technique spread bandwidth and improve gain, the advantage of its circuit is can reach about 10dB in the low-frequency range 3.1GHz-5.2GHz of ultra broadband frequency range gain, noise factor is about 4dB, power consumption is also smaller simultaneously, chip area is less, shortcoming is at high band, and this topological structure is difficult to realize the mutual compromise of high-gain and low-noise factor; The second way is the difference cascode structure, utilizes negative-feedback technology to come the broadening bandwidth to improve gain, the advantage of its circuit be at the low-frequency range 3.1GHz-5.2GHz of ultra broadband frequency range gain flatness less than 1dB, the minimal noise coefficient is at 3.5dB, power consumption 14.4mW; The shortcoming gain is less than 10dB and at high band, and this topological structure is difficult to realize high-gain.
The another kind of two-layer configuration that adopts, two electrode structures have dual mode.First kind of mode is that the first order is come spread bandwidth with common gate structure, it is simple that its circuit topological structure of gain is improved with cascodes in the second level, and gain also is higher than 10dB, and the input and output coupling better, gain flatness is also lower, and shortcoming is that noise factor is relatively big; The second way is that two-stage is all used cascodes, and utilizing negative-feedback technology to come the broadening bandwidth to improve its advantage of gain is that gain can reach very high, and gain flatness is very low, and noise factor is also less, and shortcoming is that power consumption is very big.
So how to design a kind of wideband low noise amplifier, the technical indicator of noise factor, gain, input and output coupling all is improved to some extent, become an important exploitation problem.
CN1832335A has disclosed a kind of CMOS ultra-wideband low-noise amplifier in invention disclosed patent application on the 13rd September in 2006, its amplifying circuit adopts the difference cascode structure for amplifying to be made up of two PMOS pipes and four NMOS, at the low-frequency range 3.1GHz-5.2GHz of ultra broadband frequency range higher gain and lower noise factor are arranged, but used the shunting of two PMOS pipes, system power dissipation is increased, for the UWB system, this can't satisfy the requirement of system low-power consumption; Its working frequency range is low-frequency range 3.1GHz-5.2GHz simultaneously, can't reach the requirement of system's high-gain and low-noise factor at high band.
Summary of the invention
Technical problem: the objective of the invention is to: at the shortcoming of above prior art existence, design a kind of in the full frequency band of UWB (3.1-10.6GHz) have better gain, noise factor, input and output coupling, the ultra-wideband low-noise amplifier integrated circuit of power consumption performance index.
Technical scheme: for achieving the above object, the technical solution used in the present invention is as follows:
A kind of ultra-wideband low-noise amplifier is connected to form successively by matching stage, amplifying stage, load stage, and described amplifying stage is made up of four metal-oxide-semiconductors and two feedback circuits, and amplifying stage is four port networks, two inputs, two outputs; Wherein, first input end connects the grid of first pipe, and the drain electrode of first output termination second metal-oxide-semiconductor is connected first feedback circuit between the drain electrode of the grid of first metal-oxide-semiconductor and second metal-oxide-semiconductor; The grid of second input termination the 3rd metal-oxide-semiconductor, the drain electrode of the second output termination the 4th metal-oxide-semiconductor is connected second feedback circuit between the drain electrode of the grid of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor; Two the common source metal-oxide-semiconductors i.e. drain terminal of first metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor connect two i.e. source ends of second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor of grid metal-oxide-semiconductors altogether respectively.
Described first feedback circuit is composed in series by first feedback resistance, first feedback capacity, first feedback inductance; Second feedback circuit is composed in series by second feedback resistance, second feedback capacity, second feedback inductance.
Beneficial effect: amplifying stage of the present invention is made up of four metal-oxide-semiconductors and two feedback circuits, and is simple in structure, energy consumption is low, and (3.1-10.6GHz) all has gain preferably in the UWB full frequency band, noise factor, input and output coupling, power consumption performance index.
Description of drawings
Below in conjunction with accompanying drawing the utility model embodiment is elaborated.
Fig. 1: broadband LNA structure chart;
Fig. 2: matching stage circuit diagram;
Fig. 3: amplification grade circuit figure;
Fig. 4: ultra-wideband low-noise amplifier integrated circuit figure of the present invention;
Fig. 5: example S21 and NF simulation result figure;
Fig. 6: example S11 and S22 simulation result figure.
Embodiment
As shown in Figure 1, a kind of ultra-wideband low-noise amplifier is connected to form successively by matching stage 1, amplifying stage 2, load stage 3.
As shown in Figure 3, amplifying stage 2 is made up of four metal-oxide-semiconductors and two feedback circuits, and amplifying stage 2 is four port networks, two inputs, two outputs; Wherein, first input end Vim connects the grid of the first metal-oxide-semiconductor M1, and the first output end vo m connects the drain electrode of the second metal-oxide-semiconductor M2, is connected first feedback circuit between the drain electrode of the grid of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2; The second input Vip connects the grid of the 3rd metal-oxide-semiconductor M3, and the second output end vo p connects the drain electrode of the 4th metal-oxide-semiconductor M4, is connected second feedback circuit between the drain electrode of the grid of the 3rd metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4; Two the common source metal-oxide-semiconductors i.e. drain terminal of the first metal-oxide-semiconductor M1, the 3rd metal-oxide-semiconductor M3 connect two i.e. source ends of the second metal-oxide-semiconductor M2, the 4th metal-oxide-semiconductor M4 of grid metal-oxide-semiconductors altogether respectively.
First feedback circuit is by the first feedback resistance R
F1, the first feedback capacity C
F1, the first feedback inductance L
F1Be composed in series successively; Second feedback circuit is by the second feedback resistance R
F2, the second feedback capacity C
F2, the second feedback inductance L
F2Be composed in series successively.First, second feedback resistance R
F1, R
F2Be used for Control and Feedback to the feedback quantity of grid.First, second capacitance C
F1, C
F2Be used for reducing dc power, make AC signal feed back to grid simultaneously.First, second feedback inductance L
F1, L
F2Effect be that high band at amplifier presents a very high reactance, do not allow circuit that the negative feedback that reduces gain is arranged at high band.Come spread bandwidth by the negative feedback that reduces high band, also improved the gain of LNA simultaneously at high band.
As shown in Figure 2, described matching stage 1 is a LC band pass filter, is used for widening frequency band and uses.
As shown in Figure 4, described load stage 3 is the inductance resistance series circuit, constitutes the shunt peaking load, formed a zero point, expanded the bandwidth of circuit, used the shunt peaking load also to compensate the high-frequency gain of circuit simultaneously, improved the gain flatness of circuit in whole working bandwidth.
The purpose of while in order to test, output constitutes the source class follower by 4 metal-oxide-semiconductors, is used for driving the load terminal of 50 Ω.
Provide the example of a specific implementation below.
Relevant circuit element parameter is as follows:
L
11＝L
12＝1.7nH，C
1＝55fF，L
2＝4.85nH，C
21＝C
22＝900fF；
R
f1＝R
f2＝1KΩ，L
f1＝L
f2＝308pH，C
f1＝C
f2＝80.5fF；
R
L1＝R
L2＝85Ω，L
L1＝L
L2＝3.57nH；
W
M1＝W
M3＝110μm，W
M2＝W
M4＝70μm；
W
M5＝W
M7＝40μm，W
M6＝W
M8＝75μm。
The length of all MOS devices is 0.18 μ m, and circuit voltage Vdd is 1.8V, and the main body circuital current consumes 10mA, source class follower current drain 4mA, and total power consumption is 25.2mW.
The simulation result of circuit such as Fig. 5, shown in Figure 6, circuit working frequency range 3.1-10.6GHz, input coupling S
11Less than-13.72dB, output coupling S
22Less than-14.23dB, gain S
21Be 13.48dB to the maximum, gain S
21Minimum is 12.04dB, and gain fluctuation is 1.44dB, and noise factor NF is 2.392-2.734dB.
Claims (2)
1. ultra-wideband low-noise amplifier, connected to form successively by matching stage (1), amplifying stage (2), load stage (3), it is characterized in that described amplifying stage (2) is made up of four metal-oxide-semiconductors and two feedback circuits, amplifying stage (2) is four port networks, two inputs, two outputs; Wherein, first input end (Vim) connects the grid of first metal-oxide-semiconductor (M1), and first output (Vom) connects the drain electrode of second metal-oxide-semiconductor (M2), is connected first feedback circuit between the grid of first metal-oxide-semiconductor (M1) and the drain electrode of second metal-oxide-semiconductor (M2); Second input (Vip) connects the grid of the 3rd metal-oxide-semiconductor (M3), and second output (Vop) connects the drain electrode of the 4th metal-oxide-semiconductor (M4), is connected second feedback circuit between the grid of the 3rd metal-oxide-semiconductor (M3) and the drain electrode of the 4th metal-oxide-semiconductor (M4); Two the common source metal-oxide-semiconductors i.e. drain terminal of first metal-oxide-semiconductor (M1), the 3rd metal-oxide-semiconductor (M3) connect two i.e. source ends of second metal-oxide-semiconductor (M2), the 4th metal-oxide-semiconductor (M4) of grid metal-oxide-semiconductors altogether respectively.
2. a kind of ultra-wideband low-noise amplifier integrated circuit as claimed in claim 1 is characterized in that described first feedback circuit is by the first feedback resistance (R
F1), the first feedback capacity (C
F1), the first feedback inductance (L
F1) be composed in series; Second feedback circuit is by the second feedback resistance (R
F2), the second feedback capacity (C
F2), the second feedback inductance (L
F2) be composed in series.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100224045A CN101350592A (en) | 2008-07-11 | 2008-07-11 | Ultra-wideband low noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100224045A CN101350592A (en) | 2008-07-11 | 2008-07-11 | Ultra-wideband low noise amplifier |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130656A (en) * | 2010-01-12 | 2011-07-20 | 东南大学 | Novel integrated circuit structure of full-integrated dual frequency band low-noise amplifier |
| CN102801389A (en) * | 2012-08-30 | 2012-11-28 | 东南大学 | Ultra-low power consumption low-noise amplifier |
| CN102938637A (en) * | 2011-08-15 | 2013-02-20 | 中国科学院微电子研究所 | Ultra wide band low noise amplifier circuit |
| CN102981050A (en) * | 2012-11-26 | 2013-03-20 | 昆山北极光电子科技有限公司 | Single vibration frequency measuring method |
| CN103066924A (en) * | 2011-10-20 | 2013-04-24 | 苏州微体电子科技有限公司 | Ultra-wide band and low noise amplifier |
| CN103138682A (en) * | 2011-11-29 | 2013-06-05 | 上海华虹Nec电子有限公司 | Low noise amplifier |
| CN103684399A (en) * | 2012-09-12 | 2014-03-26 | 复旦大学 | Broadband and low-gain jittering buffer |
| CN105071780A (en) * | 2015-08-25 | 2015-11-18 | 上海集成电路研发中心有限公司 | Broadband low noise amplifier with output to input feedback |
| CN109379051A (en) * | 2018-09-17 | 2019-02-22 | 南京邮电大学 | A kind of wideband low noise amplifier of double mode high-gain, low noise |
| WO2020108176A1 (en) * | 2018-11-30 | 2020-06-04 | 南京米乐为微电子科技有限公司 | Ultra-wideband low-noise amplifier |
-
2008
- 2008-07-11 CN CNA2008100224045A patent/CN101350592A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130656B (en) * | 2010-01-12 | 2015-04-08 | 东南大学 | Novel integrated circuit structure of full-integrated dual frequency band low-noise amplifier |
| CN102130656A (en) * | 2010-01-12 | 2011-07-20 | 东南大学 | Novel integrated circuit structure of full-integrated dual frequency band low-noise amplifier |
| CN102938637A (en) * | 2011-08-15 | 2013-02-20 | 中国科学院微电子研究所 | Ultra wide band low noise amplifier circuit |
| CN103066924A (en) * | 2011-10-20 | 2013-04-24 | 苏州微体电子科技有限公司 | Ultra-wide band and low noise amplifier |
| CN103138682B (en) * | 2011-11-29 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | A kind of low-noise amplifier |
| CN103138682A (en) * | 2011-11-29 | 2013-06-05 | 上海华虹Nec电子有限公司 | Low noise amplifier |
| CN102801389A (en) * | 2012-08-30 | 2012-11-28 | 东南大学 | Ultra-low power consumption low-noise amplifier |
| CN103684399A (en) * | 2012-09-12 | 2014-03-26 | 复旦大学 | Broadband and low-gain jittering buffer |
| CN102981050A (en) * | 2012-11-26 | 2013-03-20 | 昆山北极光电子科技有限公司 | Single vibration frequency measuring method |
| CN105071780A (en) * | 2015-08-25 | 2015-11-18 | 上海集成电路研发中心有限公司 | Broadband low noise amplifier with output to input feedback |
| CN105071780B (en) * | 2015-08-25 | 2018-10-16 | 上海集成电路研发中心有限公司 | With the wideband low noise amplifier for being output to input feedback |
| CN109379051A (en) * | 2018-09-17 | 2019-02-22 | 南京邮电大学 | A kind of wideband low noise amplifier of double mode high-gain, low noise |
| WO2020108176A1 (en) * | 2018-11-30 | 2020-06-04 | 南京米乐为微电子科技有限公司 | Ultra-wideband low-noise amplifier |
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Open date: 20090121 |