CN105071780A - Broadband low noise amplifier with output to input feedback - Google Patents
Broadband low noise amplifier with output to input feedback Download PDFInfo
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- CN105071780A CN105071780A CN201510526732.9A CN201510526732A CN105071780A CN 105071780 A CN105071780 A CN 105071780A CN 201510526732 A CN201510526732 A CN 201510526732A CN 105071780 A CN105071780 A CN 105071780A
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- low noise
- noise amplifier
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Abstract
The invention discloses a broadband low noise amplifier with output to input feedback. The broadband low noise amplifier comprises an input end, an output end, an amplifying circuit and an output to input feedback loop, wherein the amplifying circuit is used for receiving a radio-frequency signal from the input end and outputting the radio-frequency signal to the output end after amplifying the radio-frequency signal; the output to input feedback loop is used for feeding back the signal amplified by the amplifying circuit to the input end, and comprises a first NMOS transistor, wherein the drain end and gate end of the first NMOS transistor is connected with the output end of the amplifying circuit while the source end of the first NMOS transistor is grounded; a second NMOS transistor, wherein the drain end of the second NMOS transistor is connected with the input end; and an inductor, wherein one end of the inductor is connected with the gate end of the first NMOS transistor while the other end of the inductor is connected with the source end of the second NMOS transistor. The low noise amplifier of the invention could get rid of the limitation of a passive device to the frequency and achieve spectral response to the wide-band.
Description
Technical field
The present invention relates to integrated circuit fields, particularly a kind of wideband low noise amplifier with outputting to input feedback.
Background technology
Low noise amplifier is one of important module in radio frequency transceiver, and the signal being mainly used in being received from communication system antenna amplifies, so that the receiver circuit process of rear class.
Because the signal from antenna is general all very faint, low noise amplifier be generally all positioned at very near the position of antenna to reduce loss of signal.Be positioned at the one-level at first of whole receiver next-door neighbour antenna just because of noise amplifier, its characteristic directly affects the quality of whole receiver Received signal strength.The signal received in order to ensure antenna can at the afterbody of receiver by correct recovery, and a good low noise amplifier needs while amplifying signal, produce alap noise and distortion.
In order to realize the compliant applications of various frequency range, an amplifier is usually needed to possess enough wide broadband character.Therefore, in modern communications, need wideband low noise amplifier to realize broadband signal low noise amplification.But common wideband low noise amplifier complex structure, need the outer passive device of a lot of sheet, therefore cost is higher.
Summary of the invention
Main purpose of the present invention is the defect overcoming prior art, provides a kind of wideband low noise amplifier.
For reaching above-mentioned purpose, the invention provides a kind of wideband low noise amplifier with outputting to input feedback, comprising input, output, amplifying circuit and outputting to input feedback loop.Wherein amplifying circuit is used for from described input received RF signal and exports the output of described wideband low noise amplifier after being amplified to.Output to input feedback loop for the input by feeding back to described wideband low noise amplifier through described amplifying circuit amplifying signal, it comprises: the first nmos pass transistor, and its drain terminal is connected with the output of grid end with described amplifying circuit, source ground connection; Second nmos pass transistor, its drain terminal is connected with the input of described wideband low noise amplifier; And inductance, one end is connected with the grid end of described first nmos pass transistor, and the other end is connected with the source of described second nmos pass transistor.
Preferably, described amplifying circuit is two-stage amplifying circuit, and it comprises: the 3rd nmos pass transistor, and its grid end is connected with the input of described wideband low noise amplifier, source ground connection, and drain terminal connects power supply by the first load; 4th nmos pass transistor, its grid end is connected with the drain terminal of described 3rd nmos pass transistor, and source is connected with the output of described wideband low noise amplifier as the output of described amplifying circuit, and source connects power supply by the second load.
Preferably, the width of described 3rd nmos pass transistor is 1 ~ 20nmm, and length is 55nm; The width of described 4th nmos pass transistor is 1 ~ 20nm, and length is 55nm.
Preferably, described first load is the first resistance, and described second load is the second resistance.
Preferably, the resistance value of described first resistance is 1k ~ 10kOhm, and the resistance value of described second resistance is 1k ~ 10kOhm.
Preferably, the source of described 4th nmos pass transistor is connected with its grid end by the 3rd resistance.
Preferably, the resistance value of described 3rd resistance is 1k ~ 10kOhm.
Preferably, described wideband low noise amplifier also comprises electric capacity, and its one end is connected with the output of described amplifying circuit, one end ground connection, in order to provide output matching.
Preferably, the inductance value range of described inductance is 1nH ~ 8nH.
Preferably, the width of described first nmos pass transistor is 1um ~ 20um, and length is 100nm; The width of described second nmos pass transistor is 1um ~ 20um, and length is 20nm.
Wideband low noise amplifier of the present invention is by outputting to the design of input feedback loop, the restriction of passive device to frequency can be broken away from, realize broader frequency spectrum response, can be applied in multiple wireless standard protocol, very large benefit is brought to the design of whole low noise amplifier and receiver.
Accompanying drawing explanation
Fig. 1 is one embodiment of the invention with the circuit diagram of wideband low noise amplifier outputting to input feedback;
Fig. 2 is one embodiment of the invention with the schematic equivalent circuit of wideband low noise amplifier outputting to input feedback;
Fig. 3 is that one embodiment of the invention is with the Input matching parameter of wideband low noise amplifier and the curve chart of frequency relation that output to input feedback;
Fig. 4 is that one embodiment of the invention is with the noise factor of wideband low noise amplifier and the curve chart of frequency relation that output to input feedback.
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
In this manual and in detail in the claims, should understand when an element be called as ' attach ' to another element or " be connected " with another element time, it can directly connect, and maybe can there is intervention element.
Low noise amplifier of the present invention comprises input Input, amplifying circuit, outputs to input feedback loop and output Output.Please refer to Fig. 1, amplifying circuit is two-stage amplifying circuit, for exporting output from input received RF signal to after being amplified.Particularly, amplifying circuit comprises nmos pass transistor M1 and nmos pass transistor M2, and wherein the grid end of nmos pass transistor M1 is connected with the input of wideband low noise amplifier, source ground connection, and drain terminal connects power supply by the first load; The grid end of NMOS tube M2 is connected with the drain terminal of nmos pass transistor M1, and source is connected with the output of wideband low noise amplifier as the output of amplifying circuit, and drain terminal connects power supply by the second load.Wherein, the width of nmos pass transistor M1 is 1 ~ 20um, and be preferably 10um, length is 55nm; The width of nmos pass transistor M2 is 1 ~ 20um, and be preferably 5um, length is 55nm.Output to input feedback loop for input will be fed back to through amplifying circuit amplifying signal.Output to input feedback loop to comprise nmos pass transistor M3 and M4 and be connected to the passive inductance L1 between these two transistors.The drain terminal of nmos pass transistor M3 is connected with the output (i.e. the source of nmos pass transistor M2) of amplifying circuit with grid end, source ground connection; The drain terminal of nmos pass transistor M4 is connected with input.Passive inductance L1 one end is connected with the grid end of nmos pass transistor M3, and the other end is connected with the source of nmos pass transistor M4.Wherein, the width of nmos pass transistor M3 is 1um ~ 20um, and be preferably 5um, length is 100nm; The width of nmos pass transistor M4 is 1um ~ 20um, and length is 20nm; The inductance value of passive inductance L1 is 1nH ~ 8nH, preferred 2nH.In addition, the output of wideband low noise amplifier is also connected with a ground connection passive capacitive C1, and this ground connection passive capacitive C1 is used for providing output matching, and its span is 0 ~ 20pF, is preferably 2pF.
Next the operation principle with regard to wideband low noise amplifier of the present invention is illustrated.
Radiofrequency signal enters the first order of wideband low noise amplifier amplifying circuit from the grid end of nmos pass transistor M1, signal is after the first order is amplified, the grid end of nmos pass transistor M2 is entered after the drain terminal output of nmos pass transistor M1, enter the second level of this wideband low noise amplifier amplifying circuit thus, signal is after the second level is amplified, export from the source of nmos pass transistor M2, give and output to input feedback loop.In the present embodiment, the load end (i.e. the first load) of first order amplifying stage and the load end (i.e. the second load) of second level amplifying stage are passive resistance R1, R2, and wherein passive resistance R1 value is 1k ~ 10kOhm, preferred 3kOhm; Passive resistance R2 value 1k ~ 10kOhm, is preferably 3kOhm.Preferably, the source of nmos pass transistor M2 is connected with its grid end by passive 3rd resistance R3, resistance R3 provides automatic biasing (removing extra biasing circuit from) for nmos pass transistor pipe M2 thus, and the span of passive resistance R3 is 1k ~ 10kOhm, is preferably 6kOhm.
Signal after amplifying circuit two-stage is amplified exports from the source of nmos pass transistor pipe M2, enters the drain terminal of nmos pass transistor M3.The grid end of M3 is connected with drain terminal, provides automatic biasing structure, and by signal by inductance L 1 and nmos pass transistor M4, feeds back to the input of this wideband low noise amplifier.
As known from the above, the impedance seen from the grid end of nmos pass transistor M1 is the input impedance of wideband low noise amplifier.Figure 2 shows that the input equivalent circuit diagram of this wideband low noise amplifier.Wherein, igs1 is the equivalent current source of nmos pass transistor M1, and gm1 is the mutual conductance of nmos pass transistor M1, and Cgd1 is the gate leakage capacitance of nmos pass transistor M1, and R03 is the equivalent output impedance of nmos pass transistor M3.
The equivalent noise figure can deriving this wideband low noise amplifier from the input equivalent circuit diagram of wideband low noise amplifier is:
Wherein,
Wherein, k is temperature coefficient, and T is temperature, and γ is the circuit equivalent factor, and gm1 is the mutual conductance of nmos pass transistor M1, and Rs is input impedance (being generally 50 ohm).
As can be seen from the above equation, along with the change of frequencies omega, noise factor will present different frequency responses, and input impedance is also by frequency characteristics different for performance.The formula of above-mentioned equivalent noise figure shows, acoustic amplifier meets impedance matching requirements in wider frequency range, shows broadband response.
Figure 3 shows that the Input matching S11 of wideband low noise amplifier of the present invention and the relation curve of frequency.As we can see from the figure, this wideband low noise amplifier can both be less than-10dB at low frequency to the Input matching S11 within the scope of 14GHz, also namely means in the wide frequency ranges that this wideband low noise amplifier can realize very broadband within the scope of low frequency to 14GHz and works.This Input matching characteristic has benefited from the feedback network of this wideband low noise amplifier, namely outputs to input feedback loop.
Figure 4 shows that the gain S21 of wideband low noise amplifier of the present invention and the relation curve of frequency.As we can see from the figure, at low frequency within the scope of 14GHz, gain is all more than 11dB, and especially within the scope of 8GHz ~ 11.5GHz, S21 reaches maximum 17.6dB.This gain effect has benefited from the two-stage amplification characteristic of this wideband low noise amplifier, can to meet in frequency range most of receiver to the requirement of wideband low noise amplifier.
In sum, compared to the low noise amplifier of traditional structure, wideband low noise amplifier of the present invention is by the design of feedback network, the restriction of passive device to frequency can be broken away from, realize broader frequency spectrum response, can be applied in multiple wireless standard protocol, very large benefit will be brought to the design of whole low noise amplifier and receiver.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. with the wideband low noise amplifier outputting to input feedback, it is characterized in that, comprising:
Input;
Output;
Amplifying circuit, for exporting the output of described wideband low noise amplifier to from described input received RF signal after being amplified;
Output to input feedback loop, for the input by feeding back to described wideband low noise amplifier through described amplifying circuit amplifying signal, it comprises:
First nmos pass transistor, its drain terminal is connected with the output of grid end with described amplifying circuit, source ground connection;
Second nmos pass transistor, its drain terminal is connected with the input of described wideband low noise amplifier; And
Inductance, one end is connected with the grid end of described first nmos pass transistor, and the other end is connected with the source of described second nmos pass transistor.
2. wideband low noise amplifier according to claim 1, is characterized in that, described amplifying circuit is two-stage amplifying circuit, and it comprises:
3rd nmos pass transistor, its grid end is connected with the input of described wideband low noise amplifier, source ground connection, and drain terminal connects power supply by the first load;
4th nmos pass transistor, its grid end is connected with the drain terminal of described 3rd nmos pass transistor, and source is connected with the output of described wideband low noise amplifier as the output of described amplifying circuit, and drain terminal connects power supply by the second load.
3. wideband low noise amplifier according to claim 2, is characterized in that, the width of described 3rd nmos pass transistor is 1 ~ 20um, and length is 55nm; The width of described 4th nmos pass transistor is 1 ~ 20um, and length is 55nm.
4. wideband low noise amplifier according to claim 2, is characterized in that, described first load is the first resistance, and described second load is the second resistance.
5. wideband low noise amplifier according to claim 4, is characterized in that, the resistance value of described first resistance is 1k ~ 10kOhm, and the resistance value of described second resistance is 1k ~ 10kOhm.
6. wideband low noise amplifier according to claim 2, is characterized in that, the source of described 4th nmos pass transistor is connected with its grid end by the 3rd resistance.
7. wideband low noise amplifier according to claim 6, is characterized in that, the resistance value of described 3rd resistance is 1k ~ 10kOhm.
8. wideband low noise amplifier according to claim 1, is characterized in that, also comprises electric capacity, and its one end is connected with the output of described amplifying circuit, one end ground connection, in order to provide output matching.
9. wideband low noise amplifier according to claim 1, is characterized in that, the inductance value range of described inductance is 1nH ~ 8nH.
10. wideband low noise amplifier according to claim 1, is characterized in that, the width of described first nmos pass transistor is 1um ~ 20um, and length is 100nm; The width of described second nmos pass transistor is 1um ~ 20um, and length is 20nm.
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| CN106803746A (en) * | 2016-12-14 | 2017-06-06 | 上海集成电路研发中心有限公司 | A kind of low-noise amplifier |
| CN107579714A (en) * | 2017-09-30 | 2018-01-12 | 中国科学技术大学 | A kind of ultra-wideband low-noise amplifier of the active negative feedback structure of band |
| CN109104161A (en) * | 2018-08-20 | 2018-12-28 | 上海华虹宏力半导体制造有限公司 | Class E class radio-frequency power amplifier |
| CN110197042A (en) * | 2019-06-10 | 2019-09-03 | 智汇芯联(厦门)微电子有限公司 | Wideband low noise amplification system and its design method with High Gain Feedback loop |
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| CN102571002A (en) * | 2010-12-10 | 2012-07-11 | 上海华虹集成电路有限责任公司 | Automatic-biasing structural operation amplifier applied to band gap reference source |
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| CN106803746A (en) * | 2016-12-14 | 2017-06-06 | 上海集成电路研发中心有限公司 | A kind of low-noise amplifier |
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| CN107579714A (en) * | 2017-09-30 | 2018-01-12 | 中国科学技术大学 | A kind of ultra-wideband low-noise amplifier of the active negative feedback structure of band |
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| CN110197042A (en) * | 2019-06-10 | 2019-09-03 | 智汇芯联(厦门)微电子有限公司 | Wideband low noise amplification system and its design method with High Gain Feedback loop |
| CN110197042B (en) * | 2019-06-10 | 2023-12-22 | 智汇芯联(厦门)微电子有限公司 | Broadband low-noise amplification system with high-gain feedback loop and design method thereof |
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