CN103973233A - Low-noise amplifier based on differential structure active inductor - Google Patents
Low-noise amplifier based on differential structure active inductor Download PDFInfo
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- CN103973233A CN103973233A CN201410215815.1A CN201410215815A CN103973233A CN 103973233 A CN103973233 A CN 103973233A CN 201410215815 A CN201410215815 A CN 201410215815A CN 103973233 A CN103973233 A CN 103973233A
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Abstract
The invention discloses a low-noise amplifier based on a differential structure active inductor. The low-noise amplifier comprises an input end, an output end, the active inductor, a first load and a second load, wherein the active inductor comprises a differential input pair composed of a first transistor and a second transistor, a tail current source with at least one first common source transistor, an amplifier stage with at least one second common source transistor, and a variable resistor. The grid electrode of the first transistor is connected with the input end, the grid electrode of the second transistor is connected with a first bias voltage, the drain electrode of the first common source transistor is connected with the source electrode of the differential input pair, the drain electrode of the second common source transistor is connected with the grid electrode of the first transistor, the source electrode is grounded, and the variable resistor is connected between the drain electrode of the differential input pair and the grid electrode of the second common source transistor. The output end is connected with the drain electrode of the differential input pair. The active inductor based on the differential structure is adopted by the low-noise amplifier, and the low-noise amplifier can work within the broadband frequency range.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of low noise amplifier based on differential configuration active inductance.
Background technology
Low noise amplifier is one of important module in radio frequency transceiver, is mainly used in communication system, the signal that is received from antenna being amplified, so that the receiver circuit of rear class is processed.Because the signal from antenna is generally all very faint, low noise amplifier is generally all positioned at the position of very close antenna to reduce loss of signal.The one-level at first that is positioned at whole receiver next-door neighbour antenna just because of noise amplifier, its characteristic directly affects the quality that whole receiver receives signal.Can be at the afterbody of receiver by correct recovery in order to ensure the signal of antenna reception, a good low noise amplifier need to produce alap noise and distortion in amplifying signal.
Development along with modern mobile communication, low noise amplifier requires to be applicable to the application of various frequencies and agreement, therefore the inductance of LNA is had higher requirement, especially require the inductance of LNA variable, meet the needs of various frequencies and protocol application, thereby make whole receiver become the receiver in a broadband.The impedance matching of input and noise matching are to realize high-gain and low noise key, and what the impedance matching of input and noise matching were affected to most critical is the inductance of LNA.
As a rule, low noise amplifier inductance for Input matching is consisted of passive device, this not only requires to support in integrated circuit fabrication process inductance technique, be that top layer and time top-level metallic thickness are very large, and make the cost of whole low noise amplifier higher because inductance has occupied a lot of resources of domain.
Therefore, if can break away from passive device to the special requirement of technique, utilize the active circuit that a kind of area is less to realize inductive function, will bring very large benefit to the design of whole low noise amplifier.
Summary of the invention
Main purpose of the present invention is to overcome the defect of prior art, provides a kind of and breaks away from the inductance technique in the desired integrated circuit fabrication process of traditional passive device and have the low noise amplifier compared with small size.
The present invention adopts following technical scheme: a kind of low noise amplifier based on differential configuration active inductance, comprises input, output, active inductance, the first load (M1) and the second load (M5).Input is used for receiving input signal; Active inductance comprises that the difference input consisting of the first transistor (M2) and transistor seconds (M3) is right, and the grid of described the first transistor (M2) connects described input, and the grid of described transistor seconds (M3) connects the first bias voltage; The tail current source with at least one the first common source transistor (M4), for inputting tail current is provided to described difference, the drain electrode of this first common source transistor (M4) is inputted right source electrode with described difference and is connected; The amplifying stage with at least one the second common source transistor (M7), the drain electrode of this second common source transistor (M7) is connected with the grid of described the first transistor (M2), source ground; And variable resistor (R1), be connected in described difference and input between right drain electrode and the grid of described the second common source transistor (M7).Output is inputted right drain electrode with described difference and is connected; The first load (M1) is connected between described output and power supply (VDD); The second load (M5) is connected between described input and power supply (VDD).
Preferably, described low noise amplifier also comprises the first current source (I1), and its input is connected with power supply (VDD), and described tail current source is the mirror current source of described the first current source (I1); The 3rd transistor (M9), its drain electrode is connected with the output of described the first current source (I1), and described the first common source transistor (M4) forms the first current mirror so that the current mirror of described the first current source (I1) to described difference is inputted to right source electrode with described the 3rd transistor (M9).
Preferably, described the second load (M5) is load transistor, and its source electrode connects power supply (VDD), and drain electrode is connected with the drain electrode of described the second common source transistor (M7), and described the first current source (I1) provides electric current to described load transistor (M5).
Preferably, described low noise amplifier also comprises the 4th transistor (M8), and itself and described the 3rd transistor (M9) form the second current mirror; The 5th transistor (M6), its drain electrode is connected with the drain electrode of described the 4th transistor (M8), and source electrode is connected with power supply (VDD), and grid is connected the second bias voltage jointly with the grid of described load transistor (M5).
Preferably, described the first load (M1) is active load or passive load.
Preferably, described the first load (M1) is load transistor, and its source electrode connects power supply (VDD), and drain electrode is inputted right drain electrode with described difference and is connected, and grid is connected with the grid of described the 5th transistor (M6).
Preferably, described tail current source also comprises that forming first of cascodes with described the first common source transistor is total to gate transistor.
Preferably, described amplifying stage also comprises that forming second of cascodes with described the second common source transistor is total to gate transistor.
Preferably, the drain electrode of described the 3rd transistor (M9) is connected with the output of described the first current source (I1) by resistance (R2).
Compared with prior art, the low noise amplifier that the present invention proposes has been broken away from the inductance technique in the desired integrated circuit fabrication process of traditional passive device, and owing to having used active inductance also to make whole low noise amplifier possess very little area.In addition, the frequency characteristic of the low noise amplifier based on traditional passive inductance is along with passive inductance L value is fixing and relatively fixing, so the bandwidth of its operating frequency is narrower, works in narrow band frequency.And low noise amplifier of the present invention adopts the active inductance based on differential configuration, can effectively freely change the equivalent inductance value of active inductance, the operating frequency that makes low noise amplifier is wideband frequency.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the low noise amplifier of one embodiment of the invention.
Fig. 2 is the Input matching of low noise amplifier and the graph of relation of operating frequency of one embodiment of the invention.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
In this manual and in claims, should understand and be called as when ' attach ' to another element or " being connected " with another element when an element, it can be directly connected to another element, maybe can have intervention element.
Low noise amplifier of the present invention comprises input, output, active inductance, the first load and the second load.Active inductance is ground connection active inductance, and its input is the input of low noise amplifier.The first load is connected between output and power vd D, and the second load is connected between input and power vd D.Please refer to Fig. 1, it is depicted as the circuit diagram of the low noise amplifier of one embodiment of the invention.In the low noise amplifier of the present embodiment, ground connection active inductance comprises NMOS pipe M2 and M3, and NMOS manages M4, variable resistor R1 and NMOS pipe M7.Wherein, it is right that NMOS pipe M2 and M3 form a pair of difference input, and the grid of NMOS pipe M2 receives input signal as the input Vin of active inductance, and the grid of NMOS pipe M3 connects bias voltage Vbias
1.Because the input of this active inductance is the grid of NMOS pipe M2, the impedance of seeing from this active inductance input is the input impedance over the ground of this active inductance.The drain electrode of NMOS pipe M2 and M3 is connected to the output end vo ut of low noise amplifier jointly, and source electrode connects the drain electrode of NMOS pipe M4 jointly.NMOS pipe M4 is common source transistor, inputs tail current is provided in the present embodiment as tail current source to difference.Variable resistor R1 one end connects difference and inputs right drain electrode, and the other end connects the grid of NMOS pipe M7.The effect of NMOS pipe M7 is to carry out signal amplification as amplifying stage, its source ground, and drain electrode is connected with the input Vin of active inductance.
When signal is inputted from input Vin, difference input is to amplifying input signal, source electrode at NMOS pipe M2 and NMOS pipe M3 forms equivalent virtual earth point, through difference input drain electrode output from NMOS pipe M2 and NMOS pipe M3 to the signal after amplifying, by variable resistor R1, flow to the grid of NMOS pipe M7, NMOS pipe M7 is equivalent to a common-source amplifier, after being amplified, exports from drain electrode the signal of its grid, and because the drain electrode of NMOS pipe M7 that is to say signal input part Vin, therefore complete the amplification in a loop, form the characteristic of inductance.Because this circuit is active circuit, so this inductance is also a kind of novel active inductance.
By small-signal equivalent analysis, the equivalent inductance value of this active inductance is:
Wherein, gm2 and gm7 are respectively the gm value of NMOS pipe M2 and NMOS pipe M7, Cgs
7for the grid source electric capacity of NMOS pipe M7, ro
2for the output impedance value of NMOS pipe M2, Co
7output capacitance value for NMOW pipe M7.From above formula (1), can find out, the gm value of the effective inductance value of this active inductance and NMOS pipe M2 and NMOS pipe M7 is inversely proportional to, the grid source capacitor C gs of the effective inductance value of active inductance and NMOS pipe M7
7, NMOS pipe M7 output capacitance value Co
7, variable resistor R1 resistance positive correlation, the output impedance value negative correlation of the effective inductance value of active inductance and NMOS pipe M2.That is to say, by changing the resistance of variable resistor R1 or breadth length ratio W/L or the operating current of NMOS pipe M2/M7, just can effectively control the equivalent inductance value of above-mentioned active inductance.
The equivalent resistance of this active inductance is:
Wherein, wherein, gm2 and gm7 are respectively the gm value of NMOS pipe M2 and NMOS pipe M7, Cgs
7for the grid source electric capacity of NMOS pipe M7, ro
2for the output impedance value of NMOS pipe M2, Co
2output capacitance value for NMOS pipe M2.W=2* π * f is the frequency of this active inductance work.From above formula (2), can find out, the gm value of the equivalent resistance of this active inductance and NMOS pipe M2 and NMOS pipe M7 is inversely proportional to, the output capacitance value Co of the equivalent resistance of this active inductance and NMOS pipe M2
2, NMOS pipe M7 grid source capacitor C gs
7, resistance R 1, NMOS pipe M2 output impedance value ro
2equal negative correlation.That is to say, by changing breadth length ratio W/L or the operating current of resistance R 1 or NMOS pipe M2/M7, just can effectively control the equivalent resistance of above-mentioned active inductance.
Because the equivalent inductance value of this active inductance of the present invention can relatively change, make it can work in a wideband frequency.Therefore, the low noise amplifier building with this active inductance, is a kind of low noise amplifier that is suitable for wideband frequency input range.
Please continue to refer to Fig. 1, low noise amplifier also comprises the first current source I1, and NMOS manages M8, M9 and PMOS pipe M6, and for the amplifying stage M7 to active inductance, tail current source M4 provide electric current.Specifically, the input of current source I1 is connected with power vd D, and output is connected with the drain electrode of NMOS pipe M9 by resistance R 2.The source ground of NMOS pipe M9, grid and drain electrode are joined, and so NMOS pipe M9 and M4 form current mirror, thereby the current mirror of current source I1 to difference is inputted to right source electrode.That is to say, tail current source M4 is actual is the mirror current source of the first current source I1.NMOS pipe M8 and M9 also form current mirror, and the grid of NMOS pipe M8 is connected with the grid of NMOS pipe M9, source ground, and the drain electrode that drain electrode is managed M6 with PMOS is connected, and thus the current mirror of current source I1 is managed to M6 to PMOS.The source electrode of PMOS pipe M6 is connected to power vd D jointly with the grid that the PMOS as the second load manages M5, and grid is connected to bias voltage Vbias jointly
2.Therefore, PMOS pipe M6 is identical with the gate source voltage of PMOS pipe M5, and the current mirror that so PMOS can be managed to M6 is managed M5 to PMOS, also just can manage M7 to NMOS electric current is provided.In the present embodiment, the first load being connected between output end vo ut and power vd D is PMOS pipe M1, and its grid is connected with the grid of PMOS pipe M6, so the gate source voltage of PMOS pipe M1 and M6 is identical, the electric current of PMOS pipe M6 also can mirror image be managed M1 to PMOS, thus the electric current of control valve M1.It should be noted that though in the present embodiment, the first load M1 is PMOS pipe, be conducive to reduce the area of low noise amplifier, but in other embodiments, the first load can be also active or passive load, as resistance, inductance etc. all can.
In addition it should be noted that, in the above-described embodiments, common source NMOS pipe M4 forms tail current source, and common source NMOS pipe M7 forms amplifying stage, but in other embodiments, tail current source or amplifying stage can be all cascodes.For example, on the circuit base shown in Fig. 1, common source NMOS pipe M4 and first is the common tail current source that forms of grid NMOS pipe altogether, and common source NMOS pipe M7 and second is the common amplifying stage that forms of grid NMOS pipe altogether.The first source electrode that is total to grid NMOS pipe is connected with the drain electrode of NMOS pipe M4, drain electrode is inputted right source electrode with difference and is connected, and grid connects another bias voltage.The second source electrode that is total to grid NMOS pipe is connected with the drain electrode of NMOS pipe M7, drain electrode is connected with input Vin, and grid connects another bias voltage.
Figure 2 shows that the Input matching S11 of this low noise amplifier and the graph of relation of operating frequency.As we can see from the figure, this low noise amplifier is at can both the be less than-10dB of Input matching S11 at frequency 700MHz～5.0GHz place, also means that this low noise amplifier can work in the wide frequency ranges of 700MHz～5.0GHz.
In sum, low noise amplifier of the present invention adopts the active inductance based on differential configuration, can effectively freely change the equivalent inductance value of active inductance, makes low noise amplifier work in wideband frequency.
Although the present invention discloses as above with preferred embodiment; so described many embodiment only give an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (9)
1. the low noise amplifier based on differential configuration active inductance, is characterized in that, comprising:
Input, for receiving input signal;
Active inductance, it comprises:
The difference input consisting of the first transistor (M2) and transistor seconds (M3) is right, and the grid of described the first transistor (M2) connects described input, and the grid of described transistor seconds (M3) connects the first bias voltage;
The tail current source with at least one the first common source transistor (M4), for inputting tail current is provided to described difference, the drain electrode of this first common source transistor (M4) is inputted right source electrode with described difference and is connected;
The amplifying stage with at least one the second common source transistor (M7), the drain electrode of this second common source transistor (M7) is connected with the grid of described the first transistor (M2), source ground; And
Variable resistor (R1), is connected in described difference and inputs between right drain electrode and the grid of described the second common source transistor (M7);
Output, inputs right drain electrode with described difference and is connected;
The first load (M1), is connected between described output and power supply (VDD); And
The second load (M5), is connected between described input and power supply (VDD).
2. low noise amplifier according to claim 1, is characterized in that, also comprises:
The first current source (I1), its input is connected with power supply (VDD), and described tail current source is the mirror current source of described the first current source (I1);
The 3rd transistor (M9), its drain electrode is connected with the output of described the first current source (I1), and described the first common source transistor (M4) forms the first current mirror so that the current mirror of described the first current source (I1) to described difference is inputted to right source electrode with described the 3rd transistor (M9).
3. low noise amplifier according to claim 2, it is characterized in that, described the second load (M5) is load transistor, its source electrode connects power supply (VDD), drain electrode is connected with the drain electrode of described the second common source transistor (M7), and described the first current source (I1) provides electric current to described load transistor (M5).
4. low noise amplifier according to claim 3, is characterized in that, also comprises:
The 4th transistor (M8), itself and described the 3rd transistor (M9) form the second current mirror;
The 5th transistor (M6), its drain electrode is connected with the drain electrode of described the 4th transistor (M8), and source electrode is connected with power supply (VDD), and grid is connected the second bias voltage jointly with the grid of described load transistor (M5).
5. low noise amplifier according to claim 4, is characterized in that, described the first load (M1) is active load or passive load.
6. active inductance according to claim 5, it is characterized in that, described the first load (M1) is load transistor, and its source electrode connects power supply (VDD), drain electrode is inputted right drain electrode with described difference and is connected, and grid is connected with the grid of described the 5th transistor (M6).
7. low noise amplifier according to claim 1, is characterized in that, described tail current source also comprises that forming first of cascodes with described the first common source transistor is total to gate transistor.
8. low noise amplifier according to claim 1, is characterized in that, described amplifying stage also comprises that forming second of cascodes with described the second common source transistor is total to gate transistor.
9. low noise amplifier according to claim 2, is characterized in that, the drain electrode of described the 3rd transistor (M9) is connected with the output of described the first current source (I1) by resistance (R2).
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| CN201410215815.1A CN103973233A (en) | 2014-05-20 | 2014-05-20 | Low-noise amplifier based on differential structure active inductor |
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| CN201410215815.1A CN103973233A (en) | 2014-05-20 | 2014-05-20 | Low-noise amplifier based on differential structure active inductor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104242830A (en) * | 2014-09-21 | 2014-12-24 | 北京工业大学 | Reconfigurable ultra-broadband low noise amplifier with active inductor |
| CN107040219A (en) * | 2016-02-04 | 2017-08-11 | 意法半导体有限公司 | Fully-integrated low-noise amplifier |
| CN108616264A (en) * | 2018-07-17 | 2018-10-02 | 华南理工大学 | A kind of active inductance of high quality factor |
| CN111917382A (en) * | 2020-08-11 | 2020-11-10 | 深圳市时代速信科技有限公司 | Low-noise amplifier based on active inductor with noise elimination function |
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| US20050083151A1 (en) * | 2003-09-08 | 2005-04-21 | Haiqiao Xiao | High-frequency active inductor |
| CN202772848U (en) * | 2012-09-05 | 2013-03-06 | 江南大学 | Fully third generation telecommunication (3G) complementary metal oxide semiconductor (CMOS) difference low noise amplifier based on controllable active inductor |
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| US20050083151A1 (en) * | 2003-09-08 | 2005-04-21 | Haiqiao Xiao | High-frequency active inductor |
| CN202772848U (en) * | 2012-09-05 | 2013-03-06 | 江南大学 | Fully third generation telecommunication (3G) complementary metal oxide semiconductor (CMOS) difference low noise amplifier based on controllable active inductor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242830A (en) * | 2014-09-21 | 2014-12-24 | 北京工业大学 | Reconfigurable ultra-broadband low noise amplifier with active inductor |
| CN104242830B (en) * | 2014-09-21 | 2017-06-27 | 北京工业大学 | Reconfigurable ultra-wideband low-noise amplifier based on active inductance |
| CN107040219A (en) * | 2016-02-04 | 2017-08-11 | 意法半导体有限公司 | Fully-integrated low-noise amplifier |
| CN108616264A (en) * | 2018-07-17 | 2018-10-02 | 华南理工大学 | A kind of active inductance of high quality factor |
| CN108616264B (en) * | 2018-07-17 | 2024-03-19 | 华南理工大学 | Active inductor with high quality factor |
| CN111917382A (en) * | 2020-08-11 | 2020-11-10 | 深圳市时代速信科技有限公司 | Low-noise amplifier based on active inductor with noise elimination function |
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Application publication date: 20140806 |