CN108616264B - Active inductor with high quality factor - Google Patents
Active inductor with high quality factor Download PDFInfo
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- CN108616264B CN108616264B CN201810784048.4A CN201810784048A CN108616264B CN 108616264 B CN108616264 B CN 108616264B CN 201810784048 A CN201810784048 A CN 201810784048A CN 108616264 B CN108616264 B CN 108616264B
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- quality factor
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- 239000003990 capacitor Substances 0.000 claims abstract description 36
- 230000003071 parasitic effect Effects 0.000 claims description 20
- 238000010586 diagram Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 6
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/28—Impedance matching networks
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Abstract
The invention discloses an active inductor with high quality factor, which is formed by adding an on-chip capacitor on the basis of a common-source common-gate grounded active inductor, and specifically comprises the following steps: the first transconductance amplifier, the second transconductance amplifier, the feedback resistor, the first current source, the second current source and the on-chip capacitor; the first current source and the second current source respectively provide bias current for the first transconductance amplifier and the second transconductance amplifier; the second transconductance amplifier is formed by a cascode circuit formed by stacking two transistors, so that the gain of the amplifier is improved, and the loss of an active inductor is reduced; the feedback resistor is connected between the input of the first transconductance amplifier and the output of the second transconductance amplifier, so that the quality factor of the active inductor is improved; an on-chip capacitor is added between the grid and the source of the common grid transistor of the second transconductance amplifier, so that the equivalent inductance value is increased, the series equivalent resistance is reduced, and the quality factor of the active inductor is improved. The active inductor has the characteristic of high quality factor.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to an active inductor with a high quality factor.
Background
Inductance is an important element in a radio frequency integrated circuit, and a module requiring inductance in the radio frequency integrated circuit mainly comprises a filter, a low noise amplifier, a power amplifier, an oscillator and the like. In these modules the inductance plays an important role. The magnitude of the quality factor is one of the important indicators for measuring the performance of the inductor, and an inductor with a high quality factor means lower energy storage loss and better frequency selectivity. Inductors used in radio frequency integrated circuits can be categorized into on-chip passive inductors and on-chip active inductors. In general, the quality factor of on-chip passive inductors is typically below 10, which severely limits the performance of integrated circuits, particularly radio frequency integrated circuits. Compared with the on-chip active inductor, the on-chip passive inductor has the defects of low quality factor, small inductance value, large occupied chip area, unfavorable integration and the like, so that the on-chip active inductor becomes a big research hot spot.
Disclosure of Invention
The invention aims to overcome the defects and shortcomings in the prior art and provide the active inductor with high quality factor, and an on-chip capacitor is added on the basis of the common-source common-gate grounded active inductor, so that the equivalent inductance value is increased, the series equivalent resistance is reduced, and the quality factor of the active inductor is improved.
In order to achieve the above purpose, the invention adopts the following technical scheme:
an active inductor with high quality factor, which adds an on-chip capacitor on the basis of a cascode grounded active inductor, the active inductor specifically comprises: the first transconductance amplifier, the second transconductance amplifier, the feedback resistor, the first current source, the second current source and the on-chip capacitor; the first transconductance amplifier is composed of a first transistor, a source electrode of the first transconductance amplifier is connected with an input end of a first current source, a drain electrode of the first transconductance amplifier is connected with a power supply/ground, and an output end of the first current source is grounded; a second transistor and a third transistor of the same type as the first transistor constitute the second transconductance amplifier; the source electrode of the second transistor is connected with the drain electrode of the third transistor, the grid electrode of the second transistor is connected with the control voltage, and the drain electrode of the second transistor is connected with the output end of the second current source; the source electrode of the third transistor is grounded/power, and the grid electrode of the third transistor is connected with the source electrode of the first transistor, the input end of the first current source and the output port of the active inductor; one end of the feedback resistor is connected with the grid electrode of the first transistor, the other end of the feedback resistor is connected with the drain electrode of the second transistor and the output end of the second current source, and the input end of the second current source is connected with a power supply; one end of the on-chip capacitor is connected with the grid electrode of the second transistor, and the other end of the on-chip capacitor is connected with the source electrode of the second transistor and the drain electrode of the third transistor.
As a preferable technical solution, in an equivalent circuit diagram of the input impedance of the active inductor, the on-chip capacitor is connected in parallel with the gate-source parasitic capacitor of the second transistor.
As an optimal technical scheme, the on-chip capacitor adopts a process measure of on-chip fixed capacitor, MOS transistor capacitor, diode capacitor or gate-source parasitic capacitor of the second transistor.
As a preferred technical solution, the first current source provides a bias current for the first transconductance amplifier, and the second current source provides a bias current for the second transconductance amplifier.
As an preferable technical scheme, the first transconductance amplifier and the second transconductance amplifier are connected end to form a gyrator, and in an equivalent circuit diagram of input impedance of the active inductor, the gyrator gyrates gate-source parasitic capacitance of the first transistor into an equivalent inductor.
As a preferable technical scheme, the first transistor, the second transistor and the third transistor are NMOS transistors or PMOS transistors; when the three transistors are NMOS transistors, the drain electrode of the first transistor is connected with a power supply, and the source electrode of the third transistor is grounded; when the three transistors are all PMOS transistors, the drain electrode of the first transistor is grounded, and the source electrode of the third transistor is connected with a power supply.
As a preferable technical scheme, the feedback resistor is an on-chip active resistor or an on-chip passive resistor.
As a preferable technical scheme, the quality factor of the active inductor after the on-chip capacitor is introduced is increased, the quality factor is marked as Q, and a specific formula is as follows:
wherein R is eq Is the series equivalent resistance of the active inductance, L eq Equivalent inductance which is active inductance;
in the above, C gs1 、g m1 、g ds1 The parasitic capacitance, transconductance and output admittance of the gate source of the first transistor are respectively; c (C) gs2 、g m2 、g ds2 The parasitic capacitance, transconductance and output admittance of the gate source of the second transistor are respectively; g m3 、g ds3 Transconductance and output admittance of the third transistor respectively; c (C) i Representing the on-chip capacitance value; r is R f Representing the feedback resistance value; ω represents the angular frequency at which the active inductor operates.
Compared with the prior art, the invention has the following advantages and effects:
compared with the prior art, the invention is mainly characterized in that an on-chip capacitor is added between the grid electrode and the source electrode of the second transistor, so that the equivalent inductance value is increased, the series equivalent resistance is reduced, and the quality factor of the active inductor is improved. The second transconductance amplifier of the high-quality-factor active inductor adopts a common-source common-gate structure, so that the gain of the amplifier is improved, the loss of the inductor is reduced, and the quality factor of the active inductor is improved. And the feedback resistor is adopted to increase the equivalent inductance and reduce the series equivalent resistance, so that the quality factor is improved.
Drawings
FIG. 1 is a schematic diagram of an active inductor according to the prior art;
FIG. 2 is a schematic diagram of an embodiment of an active inductor with high quality factor according to the present invention, which is an improvement of the prior art active inductor of FIG. 1;
FIG. 3 is a schematic diagram of an equivalent circuit of the prior art active inductor input impedance of FIG. 1 in an embodiment;
FIG. 4 is a schematic diagram of an equivalent circuit of the high-quality active inductor input impedance of FIG. 2 according to an embodiment;
FIG. 5 is a quality factor of the prior art active inductor of FIG. 1 in an embodiment;
fig. 6 is a figure of merit for the high figure of merit active inductor of fig. 2 in an embodiment.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not limiting the invention.
Examples
As shown in fig. 1, which is a schematic structural diagram of an active inductor in the prior art, commonly referred to as a cascode grounded active inductor, the high-quality factor active inductor of the present invention adds an on-chip capacitor based on the prior art cascode grounded active inductor.
As shown in fig. 2, an active inductor with a high quality factor specifically includes: first transconductance amplifier, second transconductance amplifier and feedback resistor R f First current source, second current source and on-chip capacitor C i The method comprises the steps of carrying out a first treatment on the surface of the The first transconductance amplifier is formed by a first transistor M 1 The source electrode of the source electrode is connected with the input end of a first current source, the drain electrode of the source electrode is connected with a power supply/ground, and the output end of the first current source is grounded; and the first transistor M 1 Second transistor M of the same type 2 And a third transistor M 3 Forming the second transconductance amplifier, a second transistor M 2 Source of (d) and third transistor M 3 Is connected with the drain electrode of the transistor; second transistor M 2 The grid electrode of the second current source is connected with the control voltage, and the drain electrode of the second current source is connected with the output end of the second current source; third transistor M 3 The gate of which is grounded/power supply to the first transistor M 1 Is connected with the input end of the first current source and the output port A of the active inductor; the feedback resistor R f Is connected to the first transistor M 1 The other end is connected with the second transistor M 2 The drain electrode of the second current source and the output end of the second current source, the input end of the second current source is connected with a power supply; the on-chip capacitor C i Is connected to the second transistor M 2 The other end is connected with the second transistor M 2 Source of (d) and third transistor M 3 Is formed on the drain electrode of the transistor.
As shown in fig. 4, an equivalent circuit diagram of the active inductance input impedance of the present invention, the on-chip capacitor is connected in parallel with the gate-source parasitic capacitance of the second transistor;
the first current source provides bias current for the first transconductance amplifier, and the second current source provides bias current for the second transconductance amplifier; the first transconductance amplifier and the second transconductance amplifier are connected end to form a gyrator, and the gyrator turns the gate-source parasitic capacitance of the first transistor into an equivalent inductance, as shown in fig. 4;
in this embodiment, the on-chip capacitor may be a fixed on-chip capacitor, a MOS transistor capacitor, a diode capacitor, or a process measure capable of increasing the gate-source parasitic capacitance of the second transistor, which is used to increase the equivalent inductance and reduce the series equivalent resistance, so as to improve the quality factor of the active inductor.
The first transistor, the second transistor and the third transistor are NMOS transistors or PMOS transistors; when the three transistors are NMOS transistors, the drain electrode of the first transistor is connected with a power supply, and the source electrode of the third transistor is grounded; when the three transistors are PMOS transistors, the drain electrode of the first transistor is grounded, and the source electrode of the third transistor is connected with a power supply; in the high-q active inductor shown in fig. 2, the first, second and third transistors are NMOS transistors;
the feedback resistor is an on-chip active resistor or an on-chip passive resistor and is used for increasing the quality factor and equivalent inductance of the active inductor.
As shown in fig. 3, which is an equivalent circuit diagram of the input impedance of the active inductor in the prior art, it is assumed that the first transistor M 1 The parasitic capacitance of the gate source is C gs1 Transconductance is g m1 Output admittance g ds1 The method comprises the steps of carrying out a first treatment on the surface of the Second transistor M 2 The parasitic capacitance of the gate source is C gs2 Transconductance is g m2 Output admittance g ds2 The method comprises the steps of carrying out a first treatment on the surface of the Third transistor M 3 The parasitic capacitance of the gate source is C gs3 Transconductance is g m3 Output admittance g ds3 . The equivalent inductance L of the active inductance is obtained through small signal equivalent analysis eq Series equivalent resistance R eq And the quality factor Q are respectively:
wherein C is i Representing the on-chip capacitance value, R f Representing feedback electricityResistance value; ω represents the angular frequency at which the active inductor operates.
As shown in fig. 5, the quality factor of the prior art active inductor in fig. 1 is shown, and as can be seen from fig. 5, the quality factor of the prior art active inductor is not ideal, and the maximum quality factor is 38.7. According to the small signal analysis result of the prior art active inductor, in order to further increase the equivalent inductance and reduce the series equivalent resistance, thereby further increasing the quality factor of the active inductor, the second transistor M must be increased 2 Gate-source parasitic capacitance C of (2) gs2 。
Compared with the prior art active inductor, the invention has the advantages that under the same bias condition and transistor size, the invention has the advantages that 2 An on-chip capacitor C is added between the grid electrode and the source electrode i . Compared with the equivalent circuit of the active inductance input impedance in the prior art, the invention adds the on-chip capacitor C i Equivalent to enlarging the second transistor M 2 Parasitic capacitance C of gate source gs2 And a capacitor connected in parallel. As shown in FIG. 4, which is an input impedance equivalent circuit diagram of the high-quality factor active inductor (shown in FIG. 2) according to the present invention, the equivalent inductance L of the high-quality factor active inductor according to the present invention is obtained by small-signal equivalent analysis eq Series equivalent resistance R eq And the quality factor Q are respectively:
according to the equivalent inductance L eq Series equivalent resistance R eq And the expression of the quality factor Q, it was found that the on-chip capacitance C was introduced i The series equivalent resistance can be reduced and the equivalent inductance can be increased, so that the quality factor of the active inductance is increased. As shown in the figureFig. 6 shows the quality factor of the inventive high-quality factor active inductor (shown in fig. 2), and as can be seen from fig. 6, the maximum quality factor of the inventive high-quality factor active inductor can reach 724.4, and compared with the prior art active inductor of fig. 5, the maximum quality factor of the inventive high-quality factor active inductor is about 18.7 times that of the prior art active inductor. Under the same bias conditions and transistor size, the high-quality-factor active inductor can significantly improve the quality factor of the active inductor.
It is within the scope of the present invention that the non-enumerated high-quality-factor active inductors of the first, second and third transistors each be implemented using PMOS. And the invention is not limited to adding on-chip capacitance C to the circuit i To increase with the second transistor M 2 Gate-source parasitic capacitance C of (2) gs2 Capacitance in parallel, not shown, capable of increasing the second transistor M 2 Gate-source parasitic capacitance C of (2) gs2 And are within the scope of the present invention.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the protection scope of the present invention is subject to the claims.
Claims (7)
1. An active inductor with high quality factor is characterized in that an on-chip capacitor is added on the basis of a cascode grounded active inductor, and the active inductor specifically comprises: the first transconductance amplifier, the second transconductance amplifier, the feedback resistor, the first current source, the second current source and the on-chip capacitor; the first transconductance amplifier is composed of a first transistor, a source electrode of the first transconductance amplifier is connected with an input end of a first current source, a drain electrode of the first transconductance amplifier is connected with a power supply/ground, and an output end of the first current source is grounded; a second transistor and a third transistor of the same type as the first transistor constitute the second transconductance amplifier; the source electrode of the second transistor is connected with the drain electrode of the third transistor, the grid electrode of the second transistor is connected with the control voltage, and the drain electrode of the second transistor is connected with the output end of the second current source; the source electrode of the third transistor is grounded/power, and the grid electrode of the third transistor is connected with the source electrode of the first transistor, the input end of the first current source and the output port of the active inductor; one end of the feedback resistor is connected with the grid electrode of the first transistor, the other end of the feedback resistor is connected with the drain electrode of the second transistor and the output end of the second current source, and the input end of the second current source is connected with a power supply; one end of the on-chip capacitor is connected with the grid electrode of the second transistor, and the other end of the on-chip capacitor is connected with the source electrode of the second transistor and the drain electrode of the third transistor;
the quality factor is marked as Q, and the specific formula is as follows:
wherein R is eq Is the series equivalent resistance of the active inductance, L eq Equivalent inductance which is active inductance;
in the above, C gs1 、g m1 、g ds1 The parasitic capacitance, transconductance and output admittance of the gate source of the first transistor are respectively; c (C) gs2 、g m2 、g ds2 The parasitic capacitance, transconductance and output admittance of the gate source of the second transistor are respectively; g m3 、g ds3 Transconductance and output admittance of the third transistor respectively; c (C) i Representing the on-chip capacitance value; r is R f Representing the feedback resistance value; ω represents the angular frequency at which the active inductor operates.
2. The high quality factor active inductor of claim 1, wherein the on-chip capacitance is in parallel with a gate-source parasitic capacitance of the second transistor in an equivalent circuit diagram of an input impedance of the active inductor.
3. The high-q active inductor of claim 2, wherein the on-chip capacitor is implemented by on-chip fixed capacitor, MOS transistor capacitor, diode capacitor, or a process capable of increasing the parasitic gate-source capacitance of the second transistor.
4. The high quality factor active inductor of claim 1, wherein the first current source provides a bias current for a first transconductance amplifier and the second current source provides a bias current for a second transconductance amplifier.
5. The high-q active inductor of claim 1, wherein the first transconductance amplifier and the second transconductance amplifier are connected end to form a gyrator, and wherein in an equivalent circuit diagram of an input impedance of the active inductor, the gyrator gyrates a gate-source parasitic capacitance of the first transistor to an equivalent inductance.
6. The high-q active inductor of claim 1, wherein the first, second and third transistors are NMOS transistors or PMOS transistors; when the three transistors are NMOS transistors, the drain electrode of the first transistor is connected with a power supply, and the source electrode of the third transistor is grounded; when the three transistors are all PMOS transistors, the drain electrode of the first transistor is grounded, and the source electrode of the third transistor is connected with a power supply.
7. The high quality factor active inductor of claim 1, wherein the feedback resistor is an on-chip active resistor or an on-chip passive resistor.
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| CN111478680B (en) * | 2020-04-19 | 2022-12-23 | 北京工业大学 | Radio frequency voltage controlled active inductor |
| CN113541640B (en) * | 2021-07-22 | 2024-05-14 | 上海川土微电子有限公司 | On-chip integrated power active inductor |
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| KR19990048147A (en) * | 1997-12-08 | 1999-07-05 | 윤종용 | Active inductor |
| JP2003298396A (en) * | 2002-04-03 | 2003-10-17 | Nec Corp | Active inductor |
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2018
- 2018-07-17 CN CN201810784048.4A patent/CN108616264B/en active Active
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