CN105429599A - Feed-forward common-gate trans-impedance amplifier circuit with active inductor structure - Google Patents

Feed-forward common-gate trans-impedance amplifier circuit with active inductor structure Download PDF

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Publication number
CN105429599A
CN105429599A CN201510963887.9A CN201510963887A CN105429599A CN 105429599 A CN105429599 A CN 105429599A CN 201510963887 A CN201510963887 A CN 201510963887A CN 105429599 A CN105429599 A CN 105429599A
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CN
China
Prior art keywords
pass transistor
nmos pass
trans
impedance amplifier
grid
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Granted
Application number
CN201510963887.9A
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Chinese (zh)
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CN105429599B (en
Inventor
范忱
王蓉
王志功
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Southeast University
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Southeast University
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/513—Indexing scheme relating to amplifiers the amplifier being made for low supply voltages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45292—Indexing scheme relating to differential amplifiers the AAC comprising biasing means controlled by the signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45302—Indexing scheme relating to differential amplifiers the common gate stage of a cascode dif amp being controlled

Abstract

The invention discloses a feed-forward common-gate trans-impedance amplifier circuit with an active inductor structure. The feed-forward common-gate trans-impedance amplifier circuit comprises a feed-forward common-gate trans-impedance amplifier and an active inductor circuit, wherein an output end of the feed-forward common-gate trans-impedance amplifier circuit is connected with a voltage power supply after being connected in series with a pull-up resistor R1 and the active inductor circuit in sequence; and the feed-forward common-gate trans-impedance amplifier circuit comprises an input power supply, an NMOS (N-Channel Metal Oxide Semiconductor) transistor M1, an NMOS transistor M2, an NMOS transistor M3 and an NMOS transistor M4. Through adoption of the active inductor structure, a restrictive relation between a trans-impedance gain and a bandwidth is relieved. A higher trans-impedance gain can be obtained on the same working bandwidth. An active inductor is adopted, so that the layout area is not increased.

Description

There is the feedforward grid trans-impedance amplifier circuit altogether of active inductance structure
Technical field:
The present invention relates to analog integrated circuit, particularly relate to the technology of fiber optic communication field trans-impedance amplifier.
Background technology:
Low area in Optical Receivers, low cost, high bandwidth, the trans-impedance amplifier of high transimpedance gain plays an important role wherein.
Recent years, the trans-impedance amplifier of feedforward common gate structure, because overcome the large shortcoming of the intrinsic voltage margin consumption of RGC (RegulatedCascode) structure of employing, achieves the design of high bandwidth, high-gain, low noise pre-amplification circuit.But certain restricting relation can be there is between transimpedance gain and bandwidth, cannot in the impregnable situation of bandwidth, the transimpedance gain of raising.
Summary of the invention
The technical problem to be solved in the present invention is: the trans-impedance amplifier of existing feedforward common gate structure cannot in the impregnable situation of bandwidth, the transimpedance gain of raising.
For solving the problem, the technical solution used in the present invention is: the feedforward grid trans-impedance amplifier circuit altogether with active inductance structure, comprises feedforward grid trans-impedance amplifier circuit and Active inductor circuit altogether; The output of described feedforward altogether grid trans-impedance amplifier circuit is connected after pull-up resistor R1 and Active inductor circuit successively, connects voltage source; Described feedforward altogether grid trans-impedance amplifier circuit comprises input power, nmos pass transistor M1, nmos pass transistor M2, nmos pass transistor M3 and nmos pass transistor M4; Input power comprises current source in parallel and electric capacity, and its output connects the source electrode of nmos pass transistor M1 and nmos pass transistor M2 respectively, and the drain electrode of nmos pass transistor M4; The source electrode of nmos pass transistor M1 and nmos pass transistor M2 is signal input part, and the drain electrode of nmos pass transistor M1 connects pull-up resistor R1, and the drain electrode of nmos pass transistor M2 connects pull-up resistor R2, is being biased of nmos pass transistor M3 grid; The drain electrode of nmos pass transistor M3 connects pull-up resistor R3, is being biased of nmos pass transistor M1 grid; The source ground of nmos pass transistor M4, the grid of nmos pass transistor M4 is all connected voltage source Vb with the grid of nmos pass transistor M2; Pull-up resistor R2 is all connected supply voltage VDD2 with pull-up resistor R3; Described Active inductor circuit comprises resistance R4 and nmos pass transistor M5, the grid contact resistance R4 of nmos pass transistor M5, and source electrode connects pull-up resistor R1, and drain electrode connects supply voltage VDD1.
Advantage of the present invention: what the present invention adopted is the structure of active inductance, alleviates the restricting relation between transimpedance gain and bandwidth.Larger transimpedance gain can be obtained while identical bandwidth of operation.Because what adopt is active inductance, do not increase the area of domain.
Accompanying drawing explanation
Fig. 1 is existing FCG trans-impedance amplifier circuit diagram.
Fig. 2 is circuit diagram of the present invention.
Fig. 3 is the equivalent model of active inductance of the present invention.
Embodiment
As shown in Figure 1, the small-signal equivalent circuit of existing FCG trans-impedance amplifier, the transfer function of its transimpedance gain is as follows:
Z T / F C G ≈ R 1 · g m 1 ( 1 + ( g m 2 + g m b 2 ) R 2 g m 3 R 3 ) + R 1 · g m b 1 g m 1 ( 1 + ( g m 2 + g m b 2 ) R 2 g m 3 R 3 ) + ( g m 2 + g m b 2 + g m b 1 + g d s 4 ) ≈ R 1
Can draw from formula, the way improving transimpedance gain is exactly mainly improve the resistance of M1 drain electrode.But increase the change that drain resistance R1 can cause dominant pole, when limit close to input of the limit of output time, bandwidth will be greatly affected.
As Figure 2-3, the feedforward with active inductance structure is total to grid trans-impedance amplifier and comprises five nmos pass transistor M1, M2, M3, M4, M5, wherein M1 (M2) source electrode is the input of signal, the drain electrode of M3 and drain electrode difference contact resistance R3 and R2 of M2, the drain electrode of M1 connects the active inductance of R1 and M5 and R4 composition, and the drain electrode of M2 simultaneously and the drain electrode of M3 being biased respectively as M3 and M1 grid.Supply voltage V dD1size be 2.5V, V dD2size be 1.8V, V bsize be 0.9V, can external dc bias voltage be passed through, or band-gap reference power supply provides, and repeats no more here.As shown in Figure 3, from Vin, equivalent inductance looks that the size of L is to the structure of active inductance:
L ≈ R 4 C g s 5 g m 5
The series connection of equivalent inductance and resistance equals to constitute shunt peaking, when large resistance, can keep the constant of bandwidth.
The present invention, when not changing bandwidth, introduces the active inductance structure as M1 drain load in series with a resistor.The drain load of M1 can be equivalent to a larger resistant series inductance, and while obtaining larger transimpedance gain, the series inductance of equivalence inhibits simultaneously and exports the impact of limit for whole bandwidth.

Claims (1)

1. there is the feedforward grid trans-impedance amplifier circuit altogether of active inductance structure, it is characterized in that: comprise feedforward grid trans-impedance amplifier circuit and Active inductor circuit altogether;
The output of described feedforward altogether grid trans-impedance amplifier circuit is connected after pull-up resistor R1 and Active inductor circuit successively, connects voltage source;
Described feedforward altogether grid trans-impedance amplifier circuit comprises input power, nmos pass transistor M1, nmos pass transistor M2, nmos pass transistor M3 and nmos pass transistor M4;
Input power comprises current source in parallel and electric capacity, and its output connects the source electrode of nmos pass transistor M1 and nmos pass transistor M2 respectively, and the drain electrode of nmos pass transistor M4;
The source electrode of nmos pass transistor M1 and nmos pass transistor M2 is signal input part, and the drain electrode of nmos pass transistor M1 connects pull-up resistor R1,
The drain electrode of nmos pass transistor M2 connects pull-up resistor R2, is being biased of nmos pass transistor M3 grid;
The drain electrode of nmos pass transistor M3 connects pull-up resistor R3, is being biased of nmos pass transistor M1 grid;
The source ground of nmos pass transistor M4, the grid of nmos pass transistor M4 is all connected voltage source Vb with the grid of nmos pass transistor M2;
Pull-up resistor R2 is all connected supply voltage V with pull-up resistor R3 dD2;
Described Active inductor circuit comprises resistance R4 and nmos pass transistor M5, the grid contact resistance R4 of nmos pass transistor M5, and source electrode connects pull-up resistor R1, and drain electrode connects supply voltage V dD1.
CN201510963887.9A 2015-12-21 2015-12-21 Feedforward with active inductance structure is total to grid trans-impedance amplifier circuit Active CN105429599B (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
CN201510963887.9A CN105429599B (en) 2015-12-21 2015-12-21 Feedforward with active inductance structure is total to grid trans-impedance amplifier circuit

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CN105429599A true CN105429599A (en) 2016-03-23
CN105429599B CN105429599B (en) 2018-09-28

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106026937A (en) * 2016-06-06 2016-10-12 京东方科技集团股份有限公司 Two-stage operational amplifier
CN108616264A (en) * 2018-07-17 2018-10-02 华南理工大学 A kind of active inductance of high quality factor
CN111064437A (en) * 2018-10-17 2020-04-24 中兴通讯股份有限公司 Predistortion circuit
CN113346851A (en) * 2021-06-18 2021-09-03 昆明理工大学 Improved feedforward common-gate trans-impedance amplifier module

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1868114A (en) * 2003-10-14 2006-11-22 音频专用集成电路公司 Microphone preamplifier
CN102244499A (en) * 2011-06-08 2011-11-16 佛山敏石芯片有限公司 High-sensitivity front-end circuit of transimpedance amplifier (TIA)
CN102820857A (en) * 2012-06-25 2012-12-12 东南大学 Transimpedance amplifier with broad band and high gain, design method and amplifier chip
CN102916666A (en) * 2011-08-02 2013-02-06 中国科学院微电子研究所 Broadband programmable gain amplifier
CN205265629U (en) * 2015-12-21 2016-05-25 东南大学 Feedforward is bars transimpedance amplifier circuit altogether with active inductance structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1868114A (en) * 2003-10-14 2006-11-22 音频专用集成电路公司 Microphone preamplifier
CN102244499A (en) * 2011-06-08 2011-11-16 佛山敏石芯片有限公司 High-sensitivity front-end circuit of transimpedance amplifier (TIA)
CN102916666A (en) * 2011-08-02 2013-02-06 中国科学院微电子研究所 Broadband programmable gain amplifier
CN102820857A (en) * 2012-06-25 2012-12-12 东南大学 Transimpedance amplifier with broad band and high gain, design method and amplifier chip
CN205265629U (en) * 2015-12-21 2016-05-25 东南大学 Feedforward is bars transimpedance amplifier circuit altogether with active inductance structure

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106026937A (en) * 2016-06-06 2016-10-12 京东方科技集团股份有限公司 Two-stage operational amplifier
US10404220B2 (en) 2016-06-06 2019-09-03 Boe Technology Group Co., Ltd. Two-stage operational amplifier
CN106026937B (en) * 2016-06-06 2019-11-26 京东方科技集团股份有限公司 Two-stage calculation amplifier
CN108616264A (en) * 2018-07-17 2018-10-02 华南理工大学 A kind of active inductance of high quality factor
CN108616264B (en) * 2018-07-17 2024-03-19 华南理工大学 Active inductor with high quality factor
CN111064437A (en) * 2018-10-17 2020-04-24 中兴通讯股份有限公司 Predistortion circuit
CN113346851A (en) * 2021-06-18 2021-09-03 昆明理工大学 Improved feedforward common-gate trans-impedance amplifier module
CN113346851B (en) * 2021-06-18 2023-12-19 昆明理工大学 Improved feedforward common-gate transimpedance amplifier module

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