CN102244499A - High-sensitivity front-end circuit of transimpedance amplifier (TIA) - Google Patents
High-sensitivity front-end circuit of transimpedance amplifier (TIA) Download PDFInfo
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- CN102244499A CN102244499A CN2011101528016A CN201110152801A CN102244499A CN 102244499 A CN102244499 A CN 102244499A CN 2011101528016 A CN2011101528016 A CN 2011101528016A CN 201110152801 A CN201110152801 A CN 201110152801A CN 102244499 A CN102244499 A CN 102244499A
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Abstract
The invention discloses a high-sensitivity front-end circuit of a transimpedance amplifier (TIA). In the front-end circuit, a broadband amplifier is added between a load resistor and a second field-effect transistor in an existing circuit; the broadband amplifier comprises a third field-effect transistor, a fourth field-effect transistor, a second load resistor and a third load resistor; one end of the second load resistor is connected with a drain electrode of the third field-effect transistor and the other end of the second load resistor is connected with a power supply; one end of the third field-effect transistor is connected with a drain electrode of the fourth field-effect transistor and the other end of the third field-effect transistor is connected with the power supply; a grid electrode of the third field-effect transistor is connected with a drain electrode of the first field-effect transistor; a grid electrode of the fourth field-effect transistor is connected with a first input voltage and is earthed by a second capacitor; source electrodes of the third field-effect transistor and the fourth field-effect transistor are earthed respectively by a current source; and a grid electrode of the second field-effect transistor is connected with the drain electrode of the fourth field-effect transistor. The high-sensitivity front-end circuit can improve the bandwidth and sensitivity of the transimpedance amplifier remarkably and strengthen the transmission rate of the photoelectric signals or enlarge the transmission distance of the photoelectric signals.
Description
Technical field
The present invention relates to electricity field, in particular a kind of high sensitivity trans-impedance amplifier front-end circuit.
Background technology
Trans-impedance amplifier is the electronic circuit that current signal is changed into voltage signal and amplified.One of its modal purposes is the preamplifier of opto-electronic communications technology optical signal receiver.The front end of trans-impedance amplifier generally is dimerous by single-stage inverting amplifier feedback in parallel with.Inverting amplifier is common source field effect transistor or common emitter triode and load resistance composition normally.Trans-impedance amplifier is wide-band amplifier normally.Its bandwidth is amassed the bandwidth that depends on inverter and is gained long-pending with gain is.Its conversion gain is then by feedback resistance value decision in parallel.
Because trans-impedance amplifier is one of key of opto-electronic communications technology, utilize the big novel trans-impedance amplifier that noise is little with the gain height of characteristics exploitation bandwidth of each particular semiconductor technology is one of research and development focus of photoelectric communication industry always.But there is the bandwidth deficiency in existing trans-impedance amplifier always, the problem of insufficient sensitivity.Therefore, prior art has yet to be improved and developed.
Summary of the invention
The object of the present invention is to provide a kind of high sensitivity trans-impedance amplifier front-end circuit, be intended to solve the high problem of insufficient sensitivity of existing trans-impedance amplifier.
Technical scheme of the present invention is as follows:
A kind of high sensitivity trans-impedance amplifier front-end circuit, wherein, comprising: first field effect transistor, load resistance, second field effect transistor, feedback resistance in parallel, second load resistance, the 3rd load resistance, the 3rd field effect transistor, the 4th field effect transistor, second capacitor and current source; The drain electrode of described first field effect transistor is connected with power supply by load resistance, and its grid is connected with the positive pole of photodiode, its source ground; The drain electrode of described second field effect transistor is connected with power supply, and its grid is connected with the drain electrode of the 4th field effect transistor, and its source electrode is by constant-current source ground connection; One end of described second load resistance is connected in the drain electrode of the 3rd field effect transistor, and the other end is connected on the power supply; Described the 3rd load resistance one end is connected in the drain electrode of the 4th field effect transistor, and the other end is connected on the power supply; The grid of described the 3rd field effect transistor is connected in the drain electrode of first field effect transistor, and the grid of described the 4th field effect transistor connects first input voltage, and by second capacitor grounding; The source electrode of described the 3rd field effect transistor and the 4th field effect transistor is all by current source ground connection; The negative electrode of photodiode connects input voltage source, and the source electrode of second field effect transistor connects output.
Described high sensitivity trans-impedance amplifier front-end circuit, wherein, also comprise: the 5th field effect transistor and second current source, described the 5th field effect transistor is connected between first field effect transistor and the load resistance, its source electrode connects the drain electrode of first field effect transistor, its drain electrode connects the grid of the 3rd field effect transistor, its grid is connected on second input voltage, the 5th field effect transistor and first field effect transistor constitute a common gate stepped construction, and described second current source is connected in parallel on the two ends of load resistance and the 5th field effect transistor.
Described high sensitivity trans-impedance amplifier front-end circuit, wherein, described first field effect transistor, second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor is replaceable is first triode, second triode, the 3rd triode and the 4th triode, and the drain electrode of each field effect transistor, grid and source electrode correspond respectively to collector electrode, base stage and the emitter of each triode.
Described high sensitivity trans-impedance amplifier front-end circuit, wherein, described first field effect transistor, second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor and the 5th field effect transistor are replaceable to be first triode, second triode, the 3rd triode, the 4th triode and the 5th triode, and the drain electrode of each field effect transistor, grid and source electrode correspond respectively to collector electrode, base stage and the emitter of each triode.
Described high sensitivity trans-impedance amplifier front-end circuit wherein, also comprises: first capacitor, described first capacitor is connected in parallel on the two ends of second load resistance.
Beneficial effect of the present invention: to specific chip manufacturing process, the present invention proposes a kind of new trans-impedance amplifier front end circuit structure, in the load resistance R of available circuit
LAnd follow and increase the i.e. wide-band amplifier of one-level differential amplifier circuit between organ pipe M2 or the Q2 newly, compare with existing circuit, can significantly improve trans-impedance amplifier bandwidth and sensitivity, improve the transmission speed or the transmission range of photosignal, thereby also can enlarge the range of application of manufacturing process.
Description of drawings
Fig. 1 is the structural representation of existing a kind of trans-impedance amplifier front-end circuit.
Fig. 2 is the structural representation of existing another kind of trans-impedance amplifier front-end circuit.
The structural representation of a kind of trans-impedance amplifier front-end circuit that Fig. 3 provides for the embodiment of the invention one.
The structural representation of a kind of trans-impedance amplifier front-end circuit that Fig. 4 provides for the embodiment of the invention two.
The structural representation of a kind of trans-impedance amplifier front-end circuit that Fig. 5 provides for the embodiment of the invention three.
The structural representation of a kind of trans-impedance amplifier front-end circuit that Fig. 6 provides for the embodiment of the invention four.
Fig. 7 is the equivalent circuit diagram of trans-impedance amplifier.
Embodiment
For making purpose of the present invention, technical scheme and advantage clearer, clear and definite, below develop simultaneously with reference to accompanying drawing that the present invention is described in more detail for embodiment.
The front-end circuit of existing trans-impedance amplifier generally is common source field effect transistor inverting amplifier (as shown in Figure 1) or common emitter triode type inverting amplifier (as shown in Figure 2).
In Fig. 1, the drain electrode of the first field effect transistor M1 is by load resistance R
LD is connected with power vd, and the grid of the first field effect transistor M1 is connected with the positive pole of photodiode, the source ground of the first field effect transistor M1.The drain electrode of the second field effect transistor M2 is connected with constant voltage source VDD, and the grid of the second field effect transistor M2 is connected with the drain electrode of the first field effect transistor M1, and the source electrode of the second field effect transistor M2 is by constant-current source I ground connection.The source electrode of the first field effect transistor M1 is by feedback resistance R in parallel
FBe connected with the source electrode of the second field effect transistor M2.The negative electrode of photodiode connects input voltage source VPD, and the source electrode of the second field effect transistor M2 connects output VOUT.
Fig. 2 replaces with the first triode Q1 and the second triode Q2 with the first field effect transistor M1 among Fig. 1 and the second field effect transistor M2.
The present invention proposes a kind of method with increase one-level wide-band amplifier and improves bandwidth and the sensitivity of method that gain significantly improves existing trans-impedance amplifier.This method is on the basis of existing common source field effect transistor inverting amplifier or common emitter triode type inverting amplifier, increases the one-level differential amplifier circuit, referring to Fig. 3 and Fig. 4.
Referring to Fig. 3, in embodiment one, newly-increased one-level differential amplifier circuit is the load resistance R that is connected in the available circuit among Fig. 1
LAn and broadband differential amplifier between second field effect transistor (claiming again: the follow organ pipe) M2.This broadband differential amplifier comprises differential pair tube, current source I1, the second load resistance R1, the 3rd load resistance R2, the first capacitor C and the second capacitor C1 that the 3rd field effect transistor M3 and the 4th field effect transistor M4 constitute.Described first capacitor is connected in parallel on the two ends of the second load resistance R1; The second load resistance R1, one end is connected in the drain electrode of the 3rd field effect transistor M3, and the other end is connected on the power vd D; Described the 3rd load resistance R2 one end is connected in the drain electrode of the 4th field effect transistor M4, and the other end is connected on the power vd D; The grid of described the 3rd field effect transistor M3 is connected in the drain electrode of the first field effect transistor M1; The grid of described the 4th field effect transistor M4 connects the first input voltage Vb1, and by the second capacitor C1 ground connection; The source electrode of described the 3rd field effect transistor M3 and the 4th field effect transistor M4 is all by current source I1 ground connection; The grid of the second field effect transistor M2 is connected in the drain electrode of the 4th field effect transistor M4.
Referring to Fig. 4 is the circuit structure of embodiment two provided by the invention, in embodiment two, newly-increased one-level differential amplifier circuit is to be connected in the load resistance RL of the available circuit among Fig. 2 and a broadband differential amplifier between second triode (claiming again: the follow organ pipe) Q2.This broadband differential amplifier comprises differential pair tube, current source I1, the second load resistance R1, the 3rd load resistance R2, the first capacitor C and the second capacitor C1 that the 3rd triode Q3 and the 4th triode Q4 constitute.Described first capacitor is connected in parallel on the two ends of the second load resistance R1; The second load resistance R1, one end is connected on the collector electrode of the 3rd triode Q3, and the other end is connected on the power vd D; Described the 3rd load resistance R2 one end is connected on the collector electrode of the 4th triode Q4, and the other end is connected on the power vd D; The base stage of described the 3rd triode Q3 is connected on the collector electrode of the first triode Q1; The base stage of described the 4th triode Q4 connects the first input voltage Vb1, and by the second capacitor C1 ground connection; The emitter of described the 3rd triode Q3 and the 4th triode Q4 is all by current source I1 ground connection; The base stage of the second triode Q2 is connected on the collector electrode of the 4th triode Q4.
Referring to Fig. 5, the present invention also provides embodiment three, and this embodiment three is at the improvement circuit on the basis of the embodiment of the invention one product: insert common gate stepped construction and electric current injection circuit in the circuit of embodiment one.
Its particular circuit configurations is: at the first field effect transistor M1 and load resistance R
LBetween the series connection one the 5th field effect transistor M5, the source electrode of described the 5th field effect transistor M5 connects the drain electrode of the first field effect transistor M1, the drain electrode of the 5th field effect transistor M5 is connected the grid of load resistance and the 3rd field effect transistor M3, the grid of the 5th field effect transistor M5 is connected on the second input voltage Vb2, and described the 5th field effect transistor M5 and the first field effect transistor M1 constitute a common gate stepped construction.Described electric current injecting structure is a current source, and the second current source I2 is connected in parallel on load resistance R
LTwo ends with the 5th field effect transistor M5.
With the electric current injecting structure together the gate electrode stack structure be used for embodiment three simultaneously, further improve gain and bandwidth, and reach the effect that reduces equivalent input noise current.
Referring to Fig. 6, the present invention also provides embodiment four, and this embodiment four is at the improvement circuit on the basis of the embodiment of the invention two products: insert common base stepped construction and electric current injection circuit in the circuit of embodiment two.
Its particular circuit configurations is: at the first triode Q1 and load resistance R
LBetween the series connection one the 5th triode Q5, the emitter of described the 5th triode Q5 connects the collector electrode of the first triode Q1, the collector electrode of the 5th triode Q5 is connected the base stage of load resistance and the 3rd triode Q3, the base stage of the 5th triode Q5 is connected on the second input voltage Vb2, and described the 5th triode Q5 and the first triode Q1 constitute a common base stepped construction.Described electric current injecting structure is a current source, and the second current source I2 is connected in parallel on load resistance R
LTwo ends with the 5th triode Q5.
With the electric current injecting structure together the base layer stack structure be used for the common emitter inverter simultaneously, also can further improve Amplifier Gain and bandwidth, thereby the equivalent input noise current of corresponding trans-impedance amplifier is minimized.
Referring to Fig. 7, two key indexs of trans-impedance amplifier front-end circuit are bandwidth and transimpedance gain.Transimpedance gain is similar to feedback resistance R
FResistance.Bandwidth f
_ 3dBWith feedback resistance R
FRelation as follows:
Wherein, C
TBe the total capacitance of input node, GBW is that the gain and the bandwidth of inverting amplifier is long-pending.
The present invention is gain and the bandwidth long-pending (GBW) that improves inverting amplifier by the method that increases the one-level wide-band amplifier, thereby under the bandwidth same case, make amplifier that higher feedback resistance can be arranged, reach raising from closed loop gain and the purpose that reduces input equivalent resistance noise current.
To specific chip manufacturing process, the present invention proposes a kind of new trans-impedance amplifier front end circuit structure, in the load resistance RL of available circuit and follow between organ pipe M2 or the Q2 the i.e. wide-band amplifier of newly-increased one-level differential amplifier circuit, compare with existing circuit, can significantly improve trans-impedance amplifier bandwidth and sensitivity, improve the transmission speed or the transmission range of photosignal, thereby also can enlarge the range of application of manufacturing process.
Under same circuit manufacturing process condition, utilize the present invention can improve the gain and the bandwidth of trans-impedance amplifier product effectively, thereby enlarge the scope of application of product.Under the situation that does not promote manufacturing process, can accomplish the speed-raising upgrading of product, thereby certain cost advantage is also arranged.
Should be understood that application of the present invention is not limited to above-mentioned giving an example, for those of ordinary skills, can be improved according to the above description or conversion that all these improvement and conversion all should belong to the protection range of claims of the present invention.
Claims (5)
1. high sensitivity trans-impedance amplifier front-end circuit, it is characterized in that, comprising: first field effect transistor, load resistance, second field effect transistor, feedback resistance in parallel, second load resistance, the 3rd load resistance, the 3rd field effect transistor, the 4th field effect transistor, second capacitor and current source; The drain electrode of described first field effect transistor is connected with power supply by load resistance, and its grid is connected with the positive pole of photodiode, its source ground; The drain electrode of described second field effect transistor is connected with power supply, and its grid is connected with the drain electrode of the 4th field effect transistor, and its source electrode is by constant-current source ground connection; One end of described second load resistance is connected in the drain electrode of the 3rd field effect transistor, and the other end is connected on the power supply; Described the 3rd load resistance one end is connected in the drain electrode of the 4th field effect transistor, and the other end is connected on the power supply; The grid of described the 3rd field effect transistor is connected in the drain electrode of first field effect transistor, and the grid of described the 4th field effect transistor connects first input voltage, and by second capacitor grounding; The source electrode of described the 3rd field effect transistor and the 4th field effect transistor is all by current source ground connection; The negative electrode of photodiode connects input voltage source, and the source electrode of second field effect transistor connects output.
2. high sensitivity trans-impedance amplifier front-end circuit according to claim 1, it is characterized in that, also comprise: the 5th field effect transistor and second current source, described the 5th field effect transistor is connected between first field effect transistor and the load resistance, its source electrode connects the drain electrode of first field effect transistor, its drain electrode connects the grid of the 3rd field effect transistor, its grid is connected on second input voltage, the 5th field effect transistor and first field effect transistor constitute a common gate stepped construction, and described second current source is connected in parallel on the two ends of load resistance and the 5th field effect transistor.
3. high sensitivity trans-impedance amplifier front-end circuit according to claim 1, it is characterized in that, first field effect transistor, second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor are replaced with first triode, second triode, the 3rd triode and the 4th triode, and the drain electrode of each field effect transistor, grid and source electrode correspond respectively to collector electrode, base stage and the emitter of each triode.
4. high sensitivity trans-impedance amplifier front-end circuit according to claim 2, it is characterized in that, first field effect transistor, second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor and the 5th field effect transistor are replaced with first triode, second triode, the 3rd triode, the 4th triode and the 5th triode, and the drain electrode of each field effect transistor, grid and source electrode correspond respectively to collector electrode, base stage and the emitter of each triode.
5. high sensitivity trans-impedance amplifier front-end circuit according to claim 1 is characterized in that, also comprises: first capacitor, described first capacitor is connected in parallel on the two ends of second load resistance.
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| CN2011101528016A CN102244499A (en) | 2011-06-08 | 2011-06-08 | High-sensitivity front-end circuit of transimpedance amplifier (TIA) |
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| CN2011101528016A CN102244499A (en) | 2011-06-08 | 2011-06-08 | High-sensitivity front-end circuit of transimpedance amplifier (TIA) |
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Cited By (5)
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| CN104011829A (en) * | 2011-12-27 | 2014-08-27 | Dh科技发展私人贸易有限公司 | Ultrafast transimpedance amplifier interfacing electron multipliers for pulse counting applications |
| CN104242844A (en) * | 2014-09-25 | 2014-12-24 | 厦门优迅高速芯片有限公司 | Trans-impedance amplification circuit capable of realizing automatic gain control |
| CN105406823A (en) * | 2015-12-21 | 2016-03-16 | 东南大学 | Differential trans-impedance amplifier circuit in double-negative-feedback and feed-forward common-gate structure |
| CN105429599A (en) * | 2015-12-21 | 2016-03-23 | 东南大学 | Feed-forward common-gate trans-impedance amplifier circuit with active inductor structure |
| CN107390117A (en) * | 2016-05-17 | 2017-11-24 | 福特全球技术公司 | A kind of switch high voltage sample circuit for electric vehicle |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104011829A (en) * | 2011-12-27 | 2014-08-27 | Dh科技发展私人贸易有限公司 | Ultrafast transimpedance amplifier interfacing electron multipliers for pulse counting applications |
| CN104242844A (en) * | 2014-09-25 | 2014-12-24 | 厦门优迅高速芯片有限公司 | Trans-impedance amplification circuit capable of realizing automatic gain control |
| CN104242844B (en) * | 2014-09-25 | 2017-10-24 | 厦门优迅高速芯片有限公司 | It is a kind of can realize automatic growth control across resistance amplifying circuit |
| CN105406823A (en) * | 2015-12-21 | 2016-03-16 | 东南大学 | Differential trans-impedance amplifier circuit in double-negative-feedback and feed-forward common-gate structure |
| CN105429599A (en) * | 2015-12-21 | 2016-03-23 | 东南大学 | Feed-forward common-gate trans-impedance amplifier circuit with active inductor structure |
| CN105429599B (en) * | 2015-12-21 | 2018-09-28 | 东南大学 | Feedforward with active inductance structure is total to grid trans-impedance amplifier circuit |
| CN105406823B (en) * | 2015-12-21 | 2018-11-23 | 东南大学 | The difference trans-impedance amplifier circuit of double negative-feedback feedforward common gate structures |
| CN107390117A (en) * | 2016-05-17 | 2017-11-24 | 福特全球技术公司 | A kind of switch high voltage sample circuit for electric vehicle |
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Application publication date: 20111116 |