CN206164477U - Current reuse type high frequency amplifier circuit - Google Patents
Current reuse type high frequency amplifier circuit Download PDFInfo
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- CN206164477U CN206164477U CN201621069900.2U CN201621069900U CN206164477U CN 206164477 U CN206164477 U CN 206164477U CN 201621069900 U CN201621069900 U CN 201621069900U CN 206164477 U CN206164477 U CN 206164477U
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- nmos pass
- pass transistor
- amplifier circuit
- circuit
- amplifier
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Abstract
The utility model relates to a current reuse type high frequency amplifier circuit, characterized by: including the first order amplifier circuit and the second level amplifier circuit that adopt the form of piling up and be first order amplifier circuit respectively and second level amplifier circuit provides direct current bias voltage 's bias circuit, first order amplifier circuit and second level amplifier circuit adopt the pseudo - differential circuit structure of the same common source, and output load is resistance, first order amplifier circuit's output end signal passes through ac coupling capacitance connection to second level amplifier circuit's input, and second level amplifier circuit's output end signal is as the output signal of high frequency amplifier circuit. The function of two -stage signal amplification can be realized to the high frequency amplifier circuit of current reuse structure. The utility model discloses a form that the dual -stage amplifier piles up, sharing DC bias electric current rationally sets up the dc operation point of amplifier through bias circuit, and the less direct current consumption of make full use of obtains great gain and less noise.
Description
Technical field
The utility model is related to a kind of current multiplexing type radio-frequency amplifier circuit, belongs to IC design technical field.
Background technology
Low power design technique is an important technique direction of integrated circuit and development trend, is realized with lower power consumption
Desired properties index.High-frequency amplifier occupies an important position in high frequency communication circuits, the noiseproof feature of high frequency front-end system
The high-frequency amplifier foremost positioned at signal chains is depended primarily on, the noise of late-class circuit is carried out by the gain of high-frequency amplifier
Suppress, therefore high-frequency amplifier needs relatively low noise coefficient and higher gain.Meanwhile, the noise of amplifier generally with directly
Stream operating current is inversely proportional to, therefore in order to obtain less noise, amplifier needs larger working direct current.Conventional highfrequency
Amplifier generally adopts the structure of multi-stage cascade to obtain larger gain（As shown in Figure 1）, due in order to obtain less making an uproar
Sound, therefore every grade of DC power is also larger, so overall power just occupies larger specific gravity in front-end circuit.
It is the design focal point of high-frequency amplifier with the larger gain of less power consumption acquisition and less noise.
The content of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, there is provided a kind of current multiplexing type High frequency amplification
Device circuit, can make full use of the larger gain of less DC power acquisition and less noise.
According to the technical scheme that the utility model is provided, the current multiplexing type radio-frequency amplifier circuit is characterized in that：Bag
Include using the first order amplifier circuit and second level amplifier circuit and respectively first order amplifier circuit of stacking form
With the biasing circuit that second level amplifier circuit provides DC offset voltage；Electricity is amplified in the first order amplifying circuit and the second level
Road adopts identical common source pseudo-differential circuit structure, and output loading is resistance；The output end signal of the first order amplifying circuit
The input of second level amplifying circuit is connected to by ac coupling capacitor, the output end signal of second level amplifying circuit is used as height
The output signal of IF amplifier circuit.
Further, the biasing circuit is made up of two parts, and Part I includes operational amplifier, operational amplifier
Output is connected respectively to the grid of the differential pair of first order amplifier circuit by two biasing resistors, there is provided direct current biasing electricity
Pressure；Part II includes nmos pass transistor, the grid of nmos pass transistor and drain electrode connection, and is connected respectively by two biasing resistors
It is connected to the grid of the differential pair of second level amplifier circuit, there is provided DC offset voltage.
Further, the output load resistance of the first order amplifier circuit is connected to the difference of second level amplifier circuit
Be divided to two nmos pass transistors source electrode, while be connected to operational amplifier in biasing circuit Part I positive pole input
End.
Further, the first order amplifier circuit include the first nmos pass transistor NM1, the second nmos pass transistor NM2,
First electric capacity C1, the second electric capacity C2, first resistor R1 and second resistance R2；Amplifier positive input terminal VIP is connected to the first electric capacity
C1 one end, the other end of the first electric capacity C1 connects the grid of the first nmos pass transistor NM1, and amplifier negative input end VIN is connected to
Second electric capacity C2 one end, the other end of the second electric capacity C2 is connected with the grid of the first nmos pass transistor NM2, the first nmos pass transistor
The source ground of NM1 and the second nmos pass transistor NM2, one end of first resistor R1 connects the drain electrode of the first nmos pass transistor NM1,
First resistor R1 and the first nmos pass transistor NM1 drain electrode tie point as first order amplifier negative output terminal, second resistance
One end of R2 connects the tie point of the drain electrode of the second nmos pass transistor NM2, second resistance R2 and the second nmos pass transistor NM2 drain electrodes
Used as the positive output end of first order amplifier, the other end of first resistor R1 is connected with the other end of second resistance R2.
Further, the second level amplifier circuit include the 3rd nmos pass transistor NM3, the 4th nmos pass transistor NM4,
3rd electric capacity C3, the 4th electric capacity C4,3rd resistor R3 and the 4th resistance R4；The negative output terminal of first order amplifier is connected to the 3rd
Electric capacity C3 one end, the other end of the 3rd electric capacity C3 connects the grid of the 3rd nmos pass transistor NM3, the positive output of first order amplifier
End is connected to the 4th electric capacity C4 one end, and the other end of the 4th electric capacity C4 is connected with the grid of the 4th nmos pass transistor NM4, and the 3rd
The source electrode of nmos pass transistor NM3 and the 4th nmos pass transistor NM4 is connected, and is connected to first resistor R1 of first order amplifier
With the tie point of second resistance R2, one end of 3rd resistor R3 connects the drain electrode of the 3rd nmos pass transistor NM3,3rd resistor R3 and
Positive output end VON, fourth resistance R4 of the tie point of the 3rd nmos pass transistor NM3 drain electrodes as current multiplexing type high-frequency amplifier
One end connect the 4th nmos pass transistor NM4 drain electrode, the 4th resistance R4 and the 4th nmos pass transistor NM4 drain electrode tie point make
For the negative output terminal VOP of current multiplexing type high-frequency amplifier, the other end of 3rd resistor R3 is equal with the other end of the 4th resistance R4
It is connected to power supply.
Further, the biasing circuit include bias current IB, the 5th nmos pass transistor NM0, operational amplifier OPA,
First biasing resistor RB1, the second biasing resistor RB2, the 3rd biasing resistor RB3 and the 4th biasing resistor RB4；Bias current IB mono-
End connection power supply, the other end connect the 5th nmos pass transistor NM0 grid and drain electrode, and be connected to the 3rd biasing resistor RB3 and
One end of 4th biasing resistor RB4, the other end of the 3rd biasing resistor RB3 is connected to the grid of the 3rd nmos pass transistor NM3, the
The other end of four biasing resistor RB4 is connected to the grid of the 4th nmos pass transistor NM4；
The positive input terminal of operational amplifier OPA is connected to first resistor R1 of first order amplifier and the company of second resistance R4
Contact, while being connected with the source electrode of the 3rd nmos pass transistor NM3 and the 4th nmos pass transistor NM4 of second level amplifier, computing
The negative input end connection reference voltage VREF of amplifier OPA；The first biased electrical is mended in the output end connection of the operational amplifier OPA
One end of resistance RB1 and the second biasing resistor RB2, the other end of the first biasing resistor RB1 is connected to the first nmos pass transistor NM1's
Grid, the other end of the second biasing resistor RB2 is connected to the grid of the second nmos pass transistor NM2.
Further, the output end of the operational amplifier OPA is also connected with one end of compensating electric capacity CL, compensating electric capacity CL
The other end is connected to the source electrode of the first nmos pass transistor NM1 and the second nmos pass transistor NM2.
Further, the value of reference voltage V REF is the half of supply voltage.
The radio-frequency amplifier circuit of current multiplexing structure described in the utility model, can realize the work(that two-stage signal is amplified
Energy.In the form of dual-stage amplifier stacking, common DC bias current is rationally arranged and put the utility model by biasing circuit
The dc point of big device, makes full use of the larger gain of less DC power acquisition and less noise.
Description of the drawings
Fig. 1 is the structured flowchart of casacade multi-amplifier.
Fig. 2 is the schematic diagram of current multiplexing type radio-frequency amplifier circuit described in the utility model.
Specific embodiment
With reference to concrete accompanying drawing, the utility model is described in further detail.
As shown in Figure 2：The current multiplexing type radio-frequency amplifier circuit is put including the first order amplifier circuit 21, second level
Big device circuit 22 and biasing circuit 23.
The first order amplifier circuit 21 is identical with the circuit structure of second level amplifier circuit 22, using pseudo-differential shape
Formula, first order amplifier circuit " power supply " end with second level amplifier circuit " " hold be connected, i.e., using stacked structure
Form.
The biasing circuit 23 is the input difference of second level amplifier circuit 22 to providing gate bias voltage, so as to provide
Bias current, first order amplifier and the multiplexing of second level amplifier current, so the bias voltage is electricity described in the utility model
Stream composite high-frequency amplifier provides bias current；The biasing circuit 23 constitutes negative feedback loop for the by operational amplifier
" power supply " of first stage amplifier be second level amplifier " " fixed bias voltage is provided.
As shown in Fig. 2 the first order amplifier circuit 21 and second level amplifier circuit 22 are pseudo- using identical common source
Difference channel structure realizes that output loading is resistance；The output end signal of the first order amplifier circuit passes through AC coupled
Capacitance connection carries out second level amplification, the output letter of second level amplifier circuit to the input to second level amplifier circuit
Number as overall amplifier output signal.Specifically：
The first order amplifier circuit 21 includes the first nmos pass transistor NM1, the second nmos pass transistor NM2, first electric
Hold C1, the second electric capacity C2, first resistor R1 and second resistance R2；Amplifier positive input terminal VIP is connected to first electric capacity C1 one end,
The other end of the first electric capacity C1 connects the grid of the first nmos pass transistor NM1, and amplifier negative input end VIN is connected to the second electric capacity
C2 one end, the other end of the second electric capacity C2 is connected with the grid of the first nmos pass transistor NM2, the first nmos pass transistor NM1 and
The source ground of bi-NMOS transistor NM2, one end of first resistor R1 connects the drain electrode of the first nmos pass transistor NM1, this point
Used as the negative output terminal of first order amplifier, one end of second resistance R2 connects the drain electrode of the second nmos pass transistor NM2, this point
Used as the positive output end of first order amplifier, the other end of first resistor R1 is connected with the other end of second resistance R2；
The second level amplifier circuit 22 includes the 3rd nmos pass transistor NM3, the 4th nmos pass transistor NM4, the 3rd electric
Hold C3, the 4th electric capacity C4,3rd resistor R3 and the 4th resistance R4；The negative output terminal of first order amplifier is connected to the 3rd electric capacity C3
One end, the other end of the 3rd electric capacity C3 connects the grid of the 3rd nmos pass transistor NM3, the positive output end connection of first order amplifier
To the 4th electric capacity C4 one end, the other end of the 4th electric capacity C4 is connected with the grid of the 4th nmos pass transistor NM4, the 3rd NMOS crystal
The source electrode of pipe NM3 and the 4th nmos pass transistor NM4 is connected, and is connected to first resistor R1 of first order amplifier and second electric
The tie point of resistance R2, one end of 3rd resistor R3 connects the drain electrode of the 3rd nmos pass transistor NM3, and this point is used as current multiplexing type
One end of the positive output end VON of high-frequency amplifier, the 4th resistance R4 connects the drain electrode of the 4th nmos pass transistor NM4, and this point is made
For the negative output terminal VOP of current multiplexing type high-frequency amplifier, the other end of 3rd resistor R3 is equal with the other end of the 4th resistance R4
It is connected to power supply.
The biasing circuit 23 is made up of two parts, and respectively dual-stage amplifier provides DC offset voltage.Part I
Feedback loop is constituted by operational amplifier OPA, the output of operational amplifier OPA is coupled with first by two biasing resistors
The grid of level amplifier input difference pair, there is provided DC offset voltage；Part II adopts the metal-oxide-semiconductor shape of diode type of attachment
Formula, its grid and drain electrode connection, and it is connected respectively to the grid of second level amplifier differential pair by two biasing resistors, there is provided
DC offset voltage.Specifically：
The biasing circuit 23 includes bias current IB, the 5th nmos pass transistor NM0, operational amplifier OPA, the first biasing
Resistance RB1, the second biasing resistor RB2, the 3rd biasing resistor RB3 and the 4th biasing resistor RB4；Bias current IB one end connection electricity
Source, the other end connects the grid of the 5th nmos pass transistor NM0 and drain electrode, and is connected to the 3rd biasing resistor RB3 and the 4th biasing
One end of resistance RB4, the other end of the 3rd biasing resistor RB3 is connected to the grid of the 3rd nmos pass transistor NM3, the 4th biased electrical
The other end of resistance RB4 is connected to the grid of the 4th nmos pass transistor NM4；
The positive input terminal of operational amplifier OPA is connected to first resistor R1 of first order amplifier and the company of second resistance R4
Contact, while being connected with the source electrode of the 3rd nmos pass transistor NM3 and the 4th nmos pass transistor NM4 of second level amplifier, computing
The negative input end connection reference voltage VREF of amplifier OPA, the value of reference voltage V REF is generally chosen for the half of supply voltage,
That is VDD/2.The output end of operational amplifier OPA connects one end, the first biasing resistor RB1 and second biased electrical of compensating electric capacity CL
One end of resistance RB2, the other end of the first biasing resistor RB1 is connected to the grid of the first nmos pass transistor NM1, the second biasing resistor
The other end of RB2 is connected to the grid of the second nmos pass transistor NM2.
Operation principle of the present utility model：Current multiplexing type high-frequency amplifier described in the utility model, including stacking form
Dual-stage amplifier circuit and biasing circuit；Dual-stage amplifier circuit is core cell, for the amplification of high-frequency signal；Biased electrical
Road provides direct current biasing for dual-stage amplifier circuit.The type of attachment for focusing on dual-stage amplifier of the invention be stacking rather than
Common cascade system.Working direct current multiplexing is carried out using stacking form, so as to reduce amplifier overall power.
Differential pair（NM1、NM2）With load resistance（R1、R2）The amplifier architecture of composition artifact form-separating, to through coupling
The input signal of electric capacity C1, C2 AC coupled is amplified；Signal after amplification carries out exchange coupling by coupled capacitor C3, C4 again
Conjunction is input to second level amplifier, and its structure is identical with the first order, is equally realized using pseudo differential architectures, and output is the electricity
The output of stream composite high-frequency amplifier.
IB provides bias current in biasing circuit, is second level amplifier by transistor NM0, biasing resistor RB3 and RB4
Differential pair（NM3、NM4）Bias is provided, so as to provide the bias current of equal proportion；The first order amplifier of the high-frequency amplifier
21 " power supply " end be second level amplifier 22 " " end as operational amplifier OPA in biasing circuit positive input terminal, base
Used as negative input end, the output end of operational amplifier OPA is that the first order is amplified through biasing resistor RB1 and RB2 to quasi- voltage VREF
The differential pair of device 21 provides grid bias, and the output capacitor CL of operational amplifier OPA is used for the frequency compensation of feedback control loop, with
Adjust the frequency stability of feedback loop.
The technical solution of the utility model, by the way that dual-stage amplifier is designed using stacked structure so that can be multiplexed straight
Stream bias current, so as to rationally limit power consumption on the basis of gain is ensured.
Claims (8)
1. a kind of current multiplexing type radio-frequency amplifier circuit, is characterized in that：Including the first order amplifier electricity using stacking form
Road（21）With second level amplifier circuit（22）And respectively first order amplifier circuit（21）With second level amplifier circuit
（22）The biasing circuit of DC offset voltage is provided（23）；The first order amplifying circuit（21）With second level amplifying circuit（22）
Using identical common source pseudo-differential circuit structure, output loading is resistance；The first order amplifying circuit（21）Output end letter
Number second level amplifying circuit is connected to by ac coupling capacitor（22）Input, second level amplifying circuit（22）Output end
Output signal of the signal as radio-frequency amplifier circuit.
2. current multiplexing type radio-frequency amplifier circuit as claimed in claim 1, is characterized in that：The biasing circuit is by two parts
Constitute, Part I includes operational amplifier, the output of operational amplifier is connected respectively to the first order by two biasing resistors
Amplifier circuit（21）Differential pair（NM1、NM2）Grid, there is provided DC offset voltage；Part II includes NMOS crystal
Pipe, the grid of nmos pass transistor and drain electrode connection, and it is connected respectively to second level amplifier circuit by two biasing resistors
（22）Differential pair（NM3、NM4）Grid, there is provided DC offset voltage.
3. current multiplexing type radio-frequency amplifier circuit as claimed in claim 2, is characterized in that：The first order amplifier circuit
（21）Output load resistance be connected to second level amplifier circuit（22）Differential pair（NM3、NM4）Two nmos pass transistors
Source electrode, while being connected to the electrode input end of operational amplifier in biasing circuit Part I.
4. the current multiplexing type radio-frequency amplifier circuit as described in claim 1,2 or 3, is characterized in that：The first order is amplified
Device circuit（21）Including the first nmos pass transistor NM1, the second nmos pass transistor NM2, the first electric capacity C1, the second electric capacity C2, first
Resistance R1 and second resistance R2；Amplifier positive input terminal VIP is connected to first electric capacity C1 one end, and the other end of the first electric capacity C1 connects
The grid of the first nmos pass transistor NM1 is connect, amplifier negative input end VIN is connected to second electric capacity C2 one end, the second electric capacity C2's
The other end is connected with the grid of the first nmos pass transistor NM2, the source of the first nmos pass transistor NM1 and the second nmos pass transistor NM2
Pole is grounded, and one end of first resistor R1 connects the drain electrode of the first nmos pass transistor NM1, first resistor R1 and the first nmos pass transistor
Used as the negative output terminal of first order amplifier, one end of second resistance R2 connects the second nmos pass transistor to the tie point of NM1 drain electrodes
Positive output of the tie point of the drain electrode of NM2, second resistance R2 and the second nmos pass transistor NM2 drain electrodes as first order amplifier
End, the other end of first resistor R1 is connected with the other end of second resistance R2.
5. the current multiplexing type radio-frequency amplifier circuit as described in claim 1,2 or 3, is characterized in that：Amplify the second level
Device circuit（22）Including the 3rd nmos pass transistor NM3, the 4th nmos pass transistor NM4, the 3rd electric capacity C3, the 4th electric capacity C4, the 3rd
Resistance R3 and the 4th resistance R4；The negative output terminal of first order amplifier is connected to the 3rd electric capacity C3 one end, and the 3rd electric capacity C3's is another
One end connects the grid of the 3rd nmos pass transistor NM3, and the positive output end of first order amplifier is connected to the 4th electric capacity C4 one end, the
The other end of four electric capacity C4 is connected with the grid of the 4th nmos pass transistor NM4, the 3rd nmos pass transistor NM3 and the 4th NMOS crystal
The source electrode of pipe NM4 is connected, and is connected to first resistor R1 of first order amplifier and the tie point of second resistance R2, and the 3rd is electric
One end of resistance R3 connects the connection of the drain electrode of the 3rd nmos pass transistor NM3,3rd resistor R3 and the 3rd nmos pass transistor NM3 drain electrodes
Used as the positive output end VON of current multiplexing type high-frequency amplifier, one end of the 4th resistance R4 connects the 4th nmos pass transistor NM4 to point
Drain electrode, the tie point of the 4th resistance R4 and the 4th nmos pass transistor NM4 drain electrodes is used as the negative of current multiplexing type high-frequency amplifier
The other end of output end VOP, the other end of 3rd resistor R3 and the 4th resistance R4 is all connected to power supply.
6. the current multiplexing type radio-frequency amplifier circuit as described in claim 1,2 or 3, is characterized in that：The biasing circuit
（23）Including bias current IB, the 5th nmos pass transistor NM0, operational amplifier OPA, the first biasing resistor RB1, the second biased electrical
Resistance RB2, the 3rd biasing resistor RB3 and the 4th biasing resistor RB4；Bias current IB one end connects power supply, other end connection the 5th
The grid of nmos pass transistor NM0 and drain electrode, and one end of the 3rd biasing resistor RB3 and the 4th biasing resistor RB4 is connected to, the 3rd
The other end of biasing resistor RB3 is connected to the grid of the 3rd nmos pass transistor NM3, the other end connection of the 4th biasing resistor RB4
To the grid of the 4th nmos pass transistor NM4；
The positive input terminal of operational amplifier OPA is connected to first resistor R1 of first order amplifier and the connection of second resistance R4
Point, while being connected with the source electrode of the 3rd nmos pass transistor NM3 and the 4th nmos pass transistor NM4 of second level amplifier, computing is put
The negative input end connection reference voltage VREF of big device OPA；The first biasing resistor is mended in the output end connection of the operational amplifier OPA
One end of RB1 and the second biasing resistor RB2, the other end of the first biasing resistor RB1 is connected to the grid of the first nmos pass transistor NM1
Pole, the other end of the second biasing resistor RB2 is connected to the grid of the second nmos pass transistor NM2.
7. current multiplexing type radio-frequency amplifier circuit as claimed in claim 6, is characterized in that：The operational amplifier OPA's
Output end is also connected with one end of compensating electric capacity CL, and the other end of compensating electric capacity CL is connected to the first nmos pass transistor NM1 and second
The source electrode of nmos pass transistor NM2.
8. current multiplexing type radio-frequency amplifier circuit as claimed in claim 6, is characterized in that：The value of reference voltage V REF
For the half of supply voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621069900.2U CN206164477U (en) | 2016-09-21 | 2016-09-21 | Current reuse type high frequency amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621069900.2U CN206164477U (en) | 2016-09-21 | 2016-09-21 | Current reuse type high frequency amplifier circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206164477U true CN206164477U (en) | 2017-05-10 |
Family
ID=58651378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621069900.2U Active CN206164477U (en) | 2016-09-21 | 2016-09-21 | Current reuse type high frequency amplifier circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206164477U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301242A (en) * | 2016-09-21 | 2017-01-04 | 无锡中科微电子工业技术研究院有限责任公司 | Current multiplexing type radio-frequency amplifier circuit |
| CN115940830A (en) * | 2023-03-09 | 2023-04-07 | 三微电子科技(苏州)有限公司 | Amplifying circuit and amplifier comprising same |
-
2016
- 2016-09-21 CN CN201621069900.2U patent/CN206164477U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301242A (en) * | 2016-09-21 | 2017-01-04 | 无锡中科微电子工业技术研究院有限责任公司 | Current multiplexing type radio-frequency amplifier circuit |
| CN115940830A (en) * | 2023-03-09 | 2023-04-07 | 三微电子科技(苏州)有限公司 | Amplifying circuit and amplifier comprising same |
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