CN105207630B - A kind of trsanscondutance amplifier structure of current multiplexing high linearity - Google Patents
A kind of trsanscondutance amplifier structure of current multiplexing high linearity Download PDFInfo
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Abstract
The present invention proposes a kind of trsanscondutance amplifier structure of current multiplexing high linearity, it is suitable as the radio frequency transconductance stage of down-conversion mixer in wireless receiving link, including an asymmetric differential pair group, and a pair of common source amplifying stages being made up of biasing transistor and resonance circuit.Compared to five traditional pipe differential pair structure for amplifying, under identical bias current, asymmetric differential pair group can obtain the more preferable linearity.Common source amplifying stage biases transistor as extra amplifying device by the use of the tail current of differential pair group, and total transconductance value is improved on the premise of bias current is not increased, the utilization rate of bias current is improved.Compared to traditional structure, this trsanscondutance amplifier structure is improved in terms of the linearity and the utilization rate of bias current.
Description
Technical field
The present invention relates to trsanscondutance amplifier structure, more particularly to one kind lower mixing suitable for transceiver receives link
The trsanscondutance amplifier structure of the current multiplexing high linearity of device radio-frequency voltage-electric current conversion.
Background technology
Rf signal reception link processing receive signal when, it is necessary to maintain the sufficiently high linearity suppress due to
The interference signal that intermodulation is produced, because the intermodulation of signal may cause the deterioration of signal to noise ratio.Meanwhile, the higher linearity is also helped
The blocking effect and gain compression effect occurred when preventing signal intensity larger, so as to improve the power that receiver receives signal
The upper limit, increases dynamic range.In the receives link of transceiver, the effect of down-conversion mixer is during radiofrequency signal is down-converted to
Frequency or baseband signal, are the maximum one-levels of RF signal strength, therefore its linearity is sufficiently high, could improve whole reception chain
The receiving power upper limit on road.
The active down-conversion mixer of current main flow uses the tertiary structure of transconductance stage, switching stage and load stage, transconductance stage substantially
Radio frequency voltage signal is converted into current radio frequency signal, switching stage realizes that the frequency conversion of current field is made under the driving of local oscillation signal
With intermediate frequency or baseband current signal after frequency conversion produce voltage output signal in load stage.The transistor of switching stage is in deep line
Property area and cut-off region between switch, with the very high linearity.The current-voltage conversion of load stage, it is possible to use put to across resistance
The structures such as big device, but substantially produce what voltage signal was realized often by allowing current signal by passive elements such as resistance,
Therefore also there is the very high linearity.The principle of transconductance stage is to utilize the metal oxide semiconductor field-effect for working in saturation region
The small signal of transistor (MOSFET)-electric current translation function, current radio frequency signal is converted to by radio frequency voltage signal, its line
Property degree and the MOSFET small-signal transconductance linearities have direct relation, therefore often where the bottleneck as the down-conversion mixer linearity.
In summary, the linearity improvement of active down-conversion mixer is mainly realized by optimizing transconductance stage.
Traditional five pipe differential pair structure for amplifying can keep the preferable linearity when input voltage amplitude is smaller, and defeated
Enter voltage amplitude it is slightly larger when, the relation curve between differential output current and input voltage can deviate considerably from linear relationship.In order to
Increase the linear dynamic range of input signal, asymmetric differential pair group can be used, electric current-electricity of two asymmetric differential pairs is used
Pressure relation curve superposition obtains overall relation curve.Because the current-voltage relation curve of two differential pairs is respectively about defeated
Enter voltage and offset certain voltage to positive and negative both direction, therefore the transfer characteristic that its superposition is obtained can be in broader scope
Keep the preferable linearity.
Formula is calculated from the noise coefficient of cascade system, the available power gain of prime module is bigger, post-module
Contribution of the noise coefficient to the overall noise factor of system it is smaller.Therefore, in order to suppress the influence of post-module noise, it should suitable
The available power gain of degree increase prime module.For down-conversion mixer, fix what is fixed with output impedance in prime module
Under the premise of, the approach of increase available power gain is exactly to improve the transconductance value of transconductance stage.Meanwhile, in order to optimize down-conversion mixer in itself
Noise coefficient, also require that transconductance stage has sufficiently large transconductance value.However, for fixed circuit structure, improving transconductance stage
Available power gain, it is necessary to improve bias current or increase transistor breadth length ratio.The former will cause power consumption to improve, and the latter will
Cause nonlinear increase.
The content of the invention
Goal of the invention：In order to solve the above technical problems, the present invention proposes a kind of mutual conductance amplification of current multiplexing high linearity
Device structure, with the linearity is high and the characteristics of high DC bias current utilization rate, is suitable as in transceiver receives link
The radio frequency transconductance stage of down-conversion mixer.
Technical scheme：Technical scheme proposed by the present invention is：A kind of trsanscondutance amplifier structure of current multiplexing high linearity,
As the radio frequency transconductance stage of the down-conversion mixer in wireless receiving link, provided with positive and negative input VIN+, VIN-, positive and negative output end
VOUT+, VOUT- and tail current pipe bias voltage input VB, the trsanscondutance amplifier structure of the current multiplexing high linearity are led to
Cross positive and negative input VIN+, VIN- and receive radio frequency voltage signal, radio frequency voltage signal is converted into current radio frequency signal and passed through
Positive and negative output end VOUT+, VOUT- output, the trsanscondutance amplifier structure includes asymmetric a differential pair group and a pair of structures
Identical common source amplifying stage, asymmetric differential pair group and common source amplifying stage are connected using stacked structure；
The asymmetric differential pair group includes P-type mos field effect transistor M P1, MP2, N-type metal
Oxide semiconductor field effect transistor MN1, MN2, MN3, MN4, electric capacity C1, C2, C7, C8 and resistance R1, R2, wherein MN1 and
MN2 size is identical, and MN3 is identical with MN4 size；MP1, MP2 source electrode are connected, and its tie point is connected to power supply；MP1 grid
Pole, C1 top crown, R1 negative terminal, MN1 grid, MN4 grid are connected；MP2 grid, C2 top crown, R2 it is negative
End, MN2 grid, MN3 grid are connected；MP1 drain electrode, MN1 drain electrode, R1 anode, MN4 drain electrode, C7 upper pole
Plate be connected, its tie point as the trsanscondutance amplifier structure of current multiplexing high linearity negative output terminal VOUT-；MP2 drain electrode,
MN2 drain electrode, MN3 drain electrode, R2 anode, C8 top crown be connected, its tie point as current multiplexing high linearity across
Lead the positive output end VOUT+ of amplifier architecture；MN1 source electrode is connected with MN3 source electrode；The source electrode phase of MN4 source electrode and MN2
Even；MP1, MP2, MN1, MN2, MN3, MN4 provide small-signal gain for the asymmetric differential pair group；
The common source amplifying stage includes N-type mos field effect transistor MN5, MN6, and electric capacity C3, C4 are electric
Hinder R3, R4 and by electric capacity C5 is in parallel with inductance L1, electric capacity C6 two resonance circuits constituting in parallel with inductance L2；MN5 grid
Pole, C3 upper step, R3 negative terminal are connected；C3 bottom crown is connected with C1 bottom crown, and its tie point is multiple as the electric current
With the positive input terminal VIN+ of the trsanscondutance amplifier structure of high linearity；MN5 drain electrode and C7 bottom crown, C5 bottom crown and
L1 negative terminal is connected, and L1 anode is connected with C5 top crown, and its tie point is connected with MN1, MN3 source electrode tie point；MN5's
Source electrode is connected and is grounded with MN6 source electrode；MN6 grid, C4 upper step, R4 negative terminal are connected；C4 bottom crown and C2's
Bottom crown be connected, its tie point as the trsanscondutance amplifier structure of the current multiplexing high linearity negative input end VIN-；MN6
Drain electrode be connected with the negative terminal of C8 bottom crown, C6 bottom crown and L2, L2 anode is connected with C6 top crown, its connect
Point is connected with MN2, MN4 source electrode tie point；MN5 and MN6 provides small-signal gain for the common source amplifying stage, while being used as institute
The tail current offset of asymmetric differential pair group is stated, DC bias current is provided for asymmetric differential pair group, realizes bias current
Multiplexing；R3 and R4 anode as the trsanscondutance amplifier structure of the current multiplexing high linearity tail current pipe bias voltage
The bias voltage of input VB, VB reception external circuitses input simultaneously controls the DC bias current of whole trsanscondutance amplifier structure big
It is small；
Radio frequency voltage signal by electric capacity C1, C2 be coupled to asymmetric differential pair group transistor MP1, MP2, MN1, MN2,
MN3, MN4 grid, by the transformation of transistor, in output end VOUT+, VOUT- the first output current of formation；Radio frequency electrical
Pressure signal is coupled to common-source stage transistor MN5, MN6 grid by electric capacity C3, C4, by the transformation of transistor, passes through
Electric capacity C7 and C8 are coupled to output end VOUT+, VOUT- the second output current of formation；The mutual conductance of the current multiplexing high linearity
The output radio-frequency current of amplifier architecture is the current signal after the first output current is superimposed with the second output current.
It is preferred that, MP1, MP2, MN5, MN6 are respectively provided with smaller breadth length ratio relative to MN1, MN2, MN3, MN4.
Beneficial effect：Compared with prior art, the present invention has advantages below：
1st, present invention uses asymmetric differential pair group, the linearity of whole trsanscondutance amplifier structure is made to be improved；
2nd, present invention uses supplement of the common source amplifying stage as gain, due to common source amplifying stage and asymmetric differential pair group
The structure of current multiplexing is constituted, therefore quiescent dissipation is not improved while gain is improved, bias current utilization is improved
Rate.
Brief description of the drawings
Fig. 1 is the trsanscondutance amplifier structural representation of current multiplexing high linearity proposed by the present invention；
Fig. 2 is existing symmetric difference to structural representation；
Fig. 3 inputs the simulation result comparison diagram of third order intermodulation point (IIP3) for the present invention with traditional structure；
Fig. 4 is the present invention and voltage gain simulation result comparison diagram of the traditional structure under 200 Ω load resistances.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
It is the trsanscondutance amplifier structural representation of current multiplexing high linearity proposed by the present invention, its structure as shown in Figure 1
Two parts are broadly divided into, i.e., asymmetric differential pair group and common source amplifying stage part.
The asymmetric differential pair group includes P-type mos field effect transistor M P1, MP2, N-type metal
Oxide semiconductor field effect transistor MN1, MN2, MN3, MN4, electric capacity C1, C2, C7, C8 and resistance R1, R2, wherein NM1 and
NM2 size is identical, and NM3 is identical with NM4 size, and MP1, MP2 size are less than MN1, MN2, MN3, MN4 size, so that
Make MP1, MP2 overdrive voltage sufficiently high, the higher bias point of the linearity can be operated in；MP1, MP2 source electrode are connected, its
Tie point is connected to power supply；MP1 grid, C1 top crown, R1 negative terminal, MN1 grid, MN4 grid are connected；MP2
Grid, C2 top crown, R2 negative terminal, MN2 grid, MN3 grid be connected；MP1 drain electrode, MN1 drain electrode, R1
Anode, MN4 drain electrode, C7 top crown are connected, and its tie point is used as the trsanscondutance amplifier structure of current multiplexing high linearity
Negative output terminal VOUT-；MP2 drain electrode, MN2 drain electrode, MN3 drain electrode, R2 anode, C8 top crown are connected, its tie point
It is used as the positive output end VOUT+ of the trsanscondutance amplifier structure of current multiplexing high linearity；NM1 source electrode is connected with MN3 source electrode；
MN4 source electrode is connected with MN2 source electrode；MP1, MP2, MN1, MN2, MN3, MN4 provide small letter for the asymmetric differential pair group
Number gain；
The common source amplifying stage includes N-type mos field effect transistor MN5, MN6, and electric capacity c3, C4 are electric
Hinder R3, R4 and by electric capacity C5 is in parallel with inductance L1, electric capacity C6 two resonance circuits constituting in parallel with inductance L2；MN5 grid
Pole, C3 upper step, R3 negative terminal are connected；C3 bottom crown is connected with C1 bottom crown, and its tie point is multiple as the electric current
With the positive input terminal VIN+ of the trsanscondutance amplifier structure of high linearity；MN5 drain electrode and C7 bottom crown, C5 bottom crown and
L1 negative terminal is connected, and L1 anode is connected with C5 top crown, and its tie point is connected with MN1, MN3 source electrode tie point；MN5's
Source electrode is connected and is grounded with MN6 source electrode；MN6 grid, C4 upper step, R4 negative terminal are connected；C4 bottom crown and C2's
Bottom crown be connected, its tie point as the trsanscondutance amplifier structure of the current multiplexing high linearity negative input end VIN-；MN6
Drain electrode be connected with the negative terminal of C8 bottom crown, C6 bottom crown and L2, L2 anode is connected with C6 top crown, its connect
Point is connected with MN2, MN4 source electrode tie point；MN5 and MN6 provides small-signal gain for the common source amplifying stage, while being used as institute
The tail current offset of asymmetric differential pair group is stated, DC bias current is provided for asymmetric differential pair group, realizes bias current
Multiplexing；R3 and R4 anode as the trsanscondutance amplifier structure of the current multiplexing high linearity tail current pipe bias voltage
The bias voltage of input VB, VB reception external circuitses input simultaneously controls the DC bias current of whole trsanscondutance amplifier structure big
It is small；
Radio frequency voltage signal by electric capacity C1, C2 be coupled to asymmetric differential pair group transistor MP1, MP2, MN1, MN2,
MN3, MN4 grid, by the transformation of transistor, in output end VOUT+, VOUT- the first output current of formation；Radio frequency electrical
Pressure signal is coupled to common-source stage transistor MN5, MN6 grid by electric capacity C3, C4, by the transformation of transistor, passes through
Electric capacity C7 and C8 are coupled to output end VOUT+, VOUT- the second output current of formation；The mutual conductance of the current multiplexing high linearity
The output radio-frequency current of amplifier architecture is the current signal after the first output current is superimposed with the second output current.
Below by comparing small-signal differential transconductance of the symmetric difference to the small-signal difference transconductance value of structure and the present invention
The value explanation present invention can produce beneficial technique effect.
Symmetric difference shown in Fig. 2 is to the expression formula of the small-signal difference transconductance value of structure：
Wherein, Δ IDFor differential output current signal magnitude, Δ VinFor the size of differential input voltage signal, ISSFor difference
To the size of tail current, COXFor M1, M2 grid oxic horizon unit-area capacitance, (W/L) is M1, M2 breadth length ratio, μ be M1,
M2 carrier mobility.Above formula shows that symmetric difference is believed with input voltage the size of the small-signal difference transconductance value of structure
Number size is relevant, and when input voltage size exceedes certain limit, obvious distortion will occur for differential pair amplifying circuit.
Compared with symmetric difference is to structure, the differential input and output relation curve of asymmetric differential pair is on difference output electricity
Pressure is offset, i.e., corresponding input signal and be not zero when its differential output signal is zero.Using above-mentioned characteristic, one is used
The asymmetric differential pair opposite to relation curve offset direction, using mode in parallel, is overlapped, just to output current signal
The small-signal transconductance characteristic of range of linearity broadening can be obtained.Under the premise of i.e. total bias current identical, occurs same degree
During distortion, the input voltage signal Amplitude Ratio symmetric difference required for the asymmetric differential pair group is believed required input voltage
Number amplitude is greater.Above-mentioned situation illustrates that in the case of reasonable in design asymmetric differential pair group can effectively increase input
The range of linearity.
In the present invention, asymmetric differential pair group is put using resistance R1, R2 progress DC self-bias, and AC signal then passes through
C1, C2 are coupled to transistor MP1, MP2 and MN1, MN2, MN3, MN4 grid；MP1, MP2 and MN1, MN2, MN3, MN4 are carried
For small-signal transconductance；MP1, MP2 size are relatively small, therefore its overdrive voltage is higher, can be operated in the linearity higher
Bias point.
MP1, MP2, MN5, MN6 are respectively provided with smaller breadth length ratio, it is respectively provided with the bias current of normal work higher
Overdrive voltage, the linearity of small-signal transconductance is higher, and MN1, MN2, MN3, MN4 breadth length ratio are larger, with relatively low
Overdrive voltage, the overall linearity is lifted by asymmetric differential pair group.MP1, MP2 energy due to hole mobility
It is enough that the overdrive voltage higher than MN1~MN4 is issued in comparable size and equal electric current, can in order to improve current utilization rate
Current utilization rate is improved to increase MP1, MP2 size as far as possible on the premise of the linearity is not influenceed.
Common source amplifying stage by mos field effect transistor MN5, MN6 and electric capacity C5 it is in parallel with inductance L1,
The LC antiresonant circuits of electric capacity C6 compositions in parallel with inductance L2 are constituted, mos field effect transistor MN5,
MN6 carries out direct current biasing using big resistance R3, R4, and AC coupled is carried out using electric capacity C7, C8.The metal of two common source amplifying stages
Oxide semiconductor field effect transistor MN5, MN6, each act as the tail current offset of asymmetric differential pair group, are asymmetric
Differential pair group provides DC bias current, realizes the multiplexing of bias current, is that common source is put while having the ability that signal amplifies again
Big level provides small-signal gain.Due to carrying out exchange isolation using LC antiresonant circuits, therefore do not consume DC voltage nargin,
Whole trsanscondutance amplifier is identical with common five pipes differential pair to the demand of supply voltage, i.e., under the premise of total bias current identical,
When occurring the distortion of same degree, the input voltage signal Amplitude Ratio symmetric difference required for the asymmetric differential pair group is to required
The input voltage signal amplitude wanted is big.
Formula is calculated according to the noise coefficient of cascade system, the available power gain of prime module is bigger, to post-module
Noise inhibiting ability it is stronger.And the calculating formula of the available power gain of n-th grade of module is：
Wherein, ZIn, nFor n-th grade of input impedance, ZOut, n-1For the output impedance of (n-1) level, AV, nFor n-th grade of sky
Carry voltage gain, ROut, nAnd ROut, n-1Respectively n-th grade and the output resistance of (n-1) level.Thus formula is visible, increases vailable work
The approach of rate gain is mainly the gain of increase floating voltage, reduces output resistance.For whole frequency mixer, so-called voltage increases
Benefit can use conversion voltage gain to substitute, and conversion voltage gain expression formula is
AV, mixer=gTC·α·ROut, mixer
Wherein, gTCFor total mutual conductance of transconductance stage, α is the conversion coefficient that switching stage frequency conversion is acted on, ROut, mixerFor load stage
Resistance sizes.By AV, mixerExpression formula substitutes into GA, nExpression formula, can be obtained
Wherein, ZOut, LANFor the LNA output impedance of prime, ZIn, mixerFor the input impedance of transconductance stage, ROut, LANTo be preceding
The output resistance size of level LNA.From above formula, improving the method for the available power gain of frequency mixer has increase input resistance
Anti-, increase output resistance, increase transconductance stage transconductance value etc..Because input impedance is difficult to random raising, so main approach is just
It is only surplus to increase output resistance, increase transconductance stage transconductance value.Because frequency mixer often has the index request of conversion voltage gain, i.e.,
AV, mixerFor definite value, because α is also fixed value, gTC·ROut, mixerFor fixed value.In GA, mixerExpression formula in, gTCFor
Quadratic term, and ROut, mixerFor first order, therefore optimal raising available power gain GA, mixerMethod be exactly to improve transconductance stage
Transconductance value gTC
Generally, the method for improving transconductance stage transconductance value is mainly increase transistor size and increase DC bias current.Increase
The problem of big transistor size is that excessive transistor size can cause the enhancing of transistor small signal transconductance nonlinearities, and difference
To linear input range can also compress.The problem of increasing DC bias current is that power consumption can be greatly improved, because ideal situation
Under, the small-signal transconductance of the mos field effect transistor of saturation region is approximate with the evolution of DC bias current to be in
Linear relationship, therefore improve by increasing electric current the method inefficiency of mutual conductance.Trsanscondutance amplifier proposed by the present invention is used
Stacked structure, all transistors play amplification, improve the utilization rate of electric current.Meanwhile, the breadth length ratio of each transistor
And it is not very big, therefore its input linear wider range.
Fig. 3 be transistor size it is corresponding in the case of, emulate obtained current multiplexing high linearity proposed by the present invention
The input third order intermodulation point (IIP3) of trsanscondutance amplifier structure and traditional five pipes differential pair structure with DC bias current change
Curve.From the results, it was seen that when electric current is less big, the IIP3 of structure proposed by the present invention is much larger than traditional structure
IIP3。
Fig. 4 be transistor size it is corresponding in the case of, emulate obtained current multiplexing high linearity proposed by the present invention
The voltage gain of trsanscondutance amplifier structure and traditional five pipes differential pair structure is with the change curve of DC bias current, artificial circuit
Middle load is replaced using 200 Ω resistance.From the results, it was seen that under identical bias current, the present invention proposes the electricity of structure
Gain is pressed about than traditional high 3dB of five pipes differential pair.It can thus be appreciated that when realizing identical voltage gain, can be saved using this structure
Power consumption.Such as realization -6dB voltage gain, traditional structure needs the DC bias current consumed to be about 800uA, and this structure
Required DC bias current only about 350uA, not only saves the power consumption of more than half, and IIP3 is higher.
In summary, the trsanscondutance amplifier structure of current multiplexing high linearity proposed by the present invention has high linearity and height
The characteristic of bias current utilization rate, has compared to traditional structure and is significantly improved effect.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (2)
1. a kind of trsanscondutance amplifier structure of current multiplexing high linearity, is used as the radio frequency of the down-conversion mixer in wireless receiving link
Transconductance stage, provided with positive and negative input VIN+, VIN-, positive and negative output end VOUT+, VOUT- and tail current pipe bias voltage input
VB is held, the trsanscondutance amplifier structure of the current multiplexing high linearity receives radio-frequency voltage by positive and negative input VIN+, VIN-
Signal, is converted to current radio frequency signal by radio frequency voltage signal and is exported by positive and negative output end VOUT+, VOUT-, its feature
It is：Including an asymmetric differential pair group and a pair of structure identical common source amplifying stages, asymmetric differential pair group and common source are put
Big level is connected using stacked structure；
The asymmetric differential pair group includes P-type mos field effect transistor M P1, MP2, the oxidation of N-type metal
Thing semiconductor field effect transistor MN1, MN2, MN3, MN4, electric capacity C1, C2, C7, C8 and resistance R1, R2, wherein MN1 and MN2's
Size is identical, and MN3 is identical with MN4 size；MP1, MP2 source electrode are connected, and its tie point is connected to power supply；MP1 grid, C1
Top crown, R1 negative terminal, MN1 grid, MN4 grid be connected；MP2 grid, C2 top crown, R2 negative terminal, MN2
Grid, MN3 grid is connected；MP1 drain electrode, MN1 drain electrode, R1 anode, MN4 drain electrode, C7 top crown are connected,
Its tie point as the trsanscondutance amplifier structure of current multiplexing high linearity negative output terminal VOUT-；MP2 drain electrode, MN2 leakage
Pole, MN3 drain electrode, R2 anode, C8 top crown be connected, its tie point as current multiplexing high linearity trsanscondutance amplifier
The positive output end VOUT+ of structure；MN1 source electrode is connected with MN3 source electrode；MN4 source electrode is connected with MN2 source electrode；MP1、
MP2, MN1, MN2, MN3, MN4 provide small-signal gain for the asymmetric differential pair group；
The common source amplifying stage includes N-type mos field effect transistor MN5, MN6, electric capacity C3, C4, resistance
R3, R4 and by electric capacity C5 is in parallel with inductance L1, electric capacity C6 two resonance circuits constituting in parallel with inductance L2；MN5 grid,
C3 upper step, R3 negative terminal are connected；C3 bottom crown is connected with C1 bottom crown, and its tie point is high as the current multiplexing
The positive input terminal VIN+ of the trsanscondutance amplifier structure of the linearity；MN5 drain electrode and C7 bottom crown, C5 bottom crown and L1
Negative terminal is connected, and L1 anode is connected with C5 top crown, and its tie point is connected with MN1, MN3 source electrode tie point；MN5 source electrode
It is connected and is grounded with MN6 source electrode；MN6 grid, C4 upper step, R4 negative terminal are connected；C4 bottom crown and C2 lower pole
Plate be connected, its tie point as the trsanscondutance amplifier structure of the current multiplexing high linearity negative input end VIN-；MN6 leakage
Pole is connected with the negative terminal of C8 bottom crown, C6 bottom crown and L2, and L2 anode is connected with C6 top crown, its tie point with
MN2, MN4 source electrode tie point are connected；MN5 and MN6 provides small-signal gain for the common source amplifying stage, while as described non-
Symmetric difference provides DC bias current for asymmetric differential pair group, realizes answering for bias current to the tail current offset of group
With；R3 and R4 anode is inputted as the tail current pipe bias voltage of the trsanscondutance amplifier structure of the current multiplexing high linearity
Hold VB, VB to receive the bias voltage of external circuitses input and control the DC bias current size of whole trsanscondutance amplifier structure；
Radio frequency voltage signal by electric capacity C1, C2 be coupled to asymmetric differential pair group transistor MP1, MP2, MN1, MN2, MN3,
MN4 grid, by the transformation of transistor, in output end VOUT+, VOUT- the first output current of formation；Radio-frequency voltage is believed
Common-source stage transistor MN5, MN6 grid number is coupled to by electric capacity C3, C4, by the transformation of transistor, passes through electric capacity
C7 and C8 are coupled to output end VOUT+, VOUT- the second output current of formation；The mutual conductance amplification of the current multiplexing high linearity
The output radio-frequency current of device structure is the current signal after the first output current is superimposed with the second output current.
2. a kind of trsanscondutance amplifier structure of current multiplexing high linearity according to claim 1, it is characterised in that MP1,
MP2, MN5, MN6 are respectively provided with smaller breadth length ratio relative to MN1, MN2, MN3, MN4.
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| CN106330120B (en) * | 2016-08-26 | 2018-12-28 | 浙江芯迈电子科技有限公司 | A kind of spaning waveguide operational amplifier circuit with high-precision and high linearity |
| CN106330119B (en) * | 2016-08-26 | 2018-12-28 | 浙江芯迈电子科技有限公司 | A kind of spaning waveguide operational amplifier circuit with low excursion with temperature coefficient |
| US10224886B2 (en) * | 2017-05-19 | 2019-03-05 | Novatek Microelectronics Corp. | Operational amplifier circuit using variable bias control |
| CN107659271A (en) * | 2017-10-25 | 2018-02-02 | 成都西井科技有限公司 | Frequency mixer based on CMOS technology |
| CN113328710B (en) * | 2021-06-11 | 2023-09-12 | 上海川土微电子有限公司 | High-linearity transconductance circuit |
| CN114726321B (en) * | 2022-03-31 | 2023-01-31 | 上海韬润半导体有限公司 | Open-loop operational amplifier circuit |
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| CN102332868B (en) * | 2011-10-18 | 2013-08-28 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
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| JP2007116568A (en) * | 2005-10-24 | 2007-05-10 | Niigata Seimitsu Kk | Differential amplifier |
| KR100955822B1 (en) * | 2008-02-29 | 2010-05-06 | 인티그런트 테크놀로지즈(주) | Highly Linear Differential Amplifying Circuit |
| JP5503671B2 (en) * | 2012-01-30 | 2014-05-28 | 株式会社半導体理工学研究センター | Differential amplifier circuit |
-
2015
- 2015-09-30 CN CN201510640229.6A patent/CN105207630B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332868B (en) * | 2011-10-18 | 2013-08-28 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
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