CN106571780A - Adaptive biasing radio frequency power amplifier - Google Patents
Adaptive biasing radio frequency power amplifier Download PDFInfo
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- CN106571780A CN106571780A CN201611020276.1A CN201611020276A CN106571780A CN 106571780 A CN106571780 A CN 106571780A CN 201611020276 A CN201611020276 A CN 201611020276A CN 106571780 A CN106571780 A CN 106571780A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The application discloses an adaptive biasing radio frequency power amplifier comprising a biasing circuit and a power level amplifying circuit. The biasing circuit is used for providing dynamic bias voltage for a transistor II in the power level amplifying circuit; the work voltage I is connected to one end of a resistor I; the other end of the resistor I is used as an output end of the biasing circuit; the work voltage II is connected to the anode of a diode I; the cathode of the diode I is connected to the output end of the biasing circuit; the value of the work voltage II makes the diode I in a default critical conduction status. the power level amplifying circuit comprises a transistor I and the transistor II, which adopt common source and common gate structures; the transistor I adopts common source connection and the grid of the transistor I receives radio frequency input signals; the transistor II adopts common grade connection and the drain electrode of the transistor II outputs drain voltage II. The application provides adaptive biasing voltage postponing gain compression and reducing phase distortion caused by non-linear capacity.
Description
Technical field
The application is related to a kind of radio-frequency power amplifier.
Background technology
Radio-frequency power amplifier (RF power amplifier) is a kind of electronic amplifier, for penetrating lower-wattage
Frequency signal is converted to higher-wattage.Radio-frequency power amplifier typical case application be for driving transmitter (transmitter) in
Antenna, will brewed radiofrequency signal be amplified to after power demand value antennas transmitting.The design of radio-frequency power amplifier refers to
Mark generally include gain (gain), output, bandwidth, efficiency (efficiency), the linearity (linearity), input and
Output impedance matching (impedance matching), caloric value etc..
The efficiency of radio-frequency power amplifier refers to that dc power of power supply is converted to the energy of radio-frequency signal output power for it
Power.The power for not being converted to radio-frequency signal output power is just changed into heat and comes out, therefore the radio-frequency power of poor efficiency
Amplifier just has higher caloric value.
The linearity of radio-frequency power amplifier refers to the linear relationship between its output and input power.Ideal situation
Under, radio-frequency power amplifier only improves the power of input signal and does not change the content of signal, and this requires radio-frequency power amplifier
Identical gain is kept in its working frequency range.But the gain of most of power amplification elements is reduced all as frequency is raised,
Therefore it is unable to reach the preferable linearity.Using the radiofrequency signal of complex modulation mode for the linearity of radio-frequency power amplifier
Require higher.
Modern radio-frequency power amplifier can adopt GaAs (GaAs) HBT (heterojunction bipolar
Transistor, heterojunction bipolar transistor), LDMOS (laterally diffused metal oxide
Semiconductor, LDMOS), CMOS (complementary metal-oxide-
Semiconductor, CMOS) etc. as power amplification element.Wherein realized using cmos device
Radio-frequency power amplifier have the advantages that compatible good, integrated level is high, low cost, there is also that the linearity is low, pressure voltage is low
Shortcoming.Therefore how to realize that the radio-frequency power amplifier of high power, high efficiency and high linearity just becomes using cmos device
One problem for being worth research and development, research and development difficult point essentially consists in the following aspects.
First, metal-oxide-semiconductor (metal-oxide-semiconductor field-effect transistor, metal oxidation
Thing semiconductor field effect transistor) it is a kind of nonlinear device.Radio-frequency power amplifier is realized using metal-oxide-semiconductor, its max line
Property output (maximum linear output power) is less.
Fig. 1 is referred to, this is the gain-output power curve schematic diagram of single metal-oxide-semiconductor power amplifier.When single metal-oxide-semiconductor work(
When rate amplifier is operated in A quasi-modes, quiescent bias current is big, first generally remains stable with output increase gain and then subtracts
It is little, as shown in curve A.The leading portion gain of curve A is substantially constant, referred to as small-signal gain (small-signal gain).Curve
The back segment gain of A increases with output and reduces, that is, there occurs gain compression (gain compression).When single metal-oxide-semiconductor
When power amplifier is operated in AB quasi-modes, quiescent bias current is little, may be as shown in curve A, it is also possible to as curveb.
Curve B represents that first generally remaining stable then increase with output increase gain reduces afterwards again.The leading portion gain of curve B is substantially
Stablize, referred to as small-signal gain.The midrange gain of curve B increases with output and increases, that is, there occurs gain extension (gain
expansion).The back segment gain of curve B increases with output and reduces, that is, there occurs gain compression.It is higher in order to realize
The linearity and efficiency, AB quasi-modes are usually operated at when metal-oxide-semiconductor is used as power amplification element, either curve A is still
Gain shown in curve B and the relation of output, gain compression is always occurred in close saturation output power, be which has limited
The maximum linear output of metal-oxide-semiconductor.
Second, single metal-oxide-semiconductor power amplifier has the shortcomings that the linearity is low, efficiency is low, maximum linear output is little.For
These shortcomings are made up, the radio-frequency power amplifier constituted using metal-oxide-semiconductor generally adopts cascade (cascode, also referred to as cascode
Cobasis) structure, as shown in Fig. 2 being divided into two-stage.First order metal-oxide-semiconductor adopts common source (common source) connection, i.e. grid
Pole drains as signal input part as signal input part.Second level metal-oxide-semiconductor adopts common gate (common gate) connection, i.e.,
Source electrode drains as signal output part as signal input part.The source electrode of the drain electrode connection second level metal-oxide-semiconductor of first order metal-oxide-semiconductor.
The radio-frequency power amplifier of this cascode structure can improve running voltage and then improve output.There is provided and be input into and defeated
Isolation between going out, but efficiency, still than relatively low, the linearity is also poor.
IEEE Microwave Magazine magazines (Volume) the 5th phase (issue) of volume 11 of the publication of in August, 2010
There is an article《The Linearity-Efficiency Compromise》, author is Pedro M.Lavrador etc..This piece
Article is difficult to acquirement high efficiency simultaneously to radio-frequency power amplifier and is analyzed with the target of high linearity, and to existing line
Property technology is described and analysis.
Application publication number is CN104716905A, the Chinese invention patent application that Shen Qing Publication day is on June 17th, 2015
《The cascade radio-frequency power amplifier that a kind of efficiency is improved》In, disclose a kind of biasing of the amplifier of cascode structure
Circuit.The biasing circuit is mainly by HEMT (High-electron-mobility transistor, high electron mobility crystal
Pipe) composition, can be adjusted by control voltage and be exported to the bias voltage of transistor.The program is by introducing extra control electricity
Road increased the complexity of circuit adjusting the bias voltage of transistor, improve power consumption.
Application publication number is CN104716910A, the Chinese invention patent application that Shen Qing Publication day is on June 17th, 2015
《Cascode amplifier》In, disclose a kind of biasing circuit of the amplifier of cascode structure.The biasing circuit is according to can
The supply voltage of change provides variable bias voltage into transistor.The program by from by way of supply voltage function representation to
Transistor provides bias voltage, is similar to adaptive bias mode, but the biasing circuit being related to is considerably complicated, thus greatly increases
The complexity of circuit.
Application publication number is CN105765858A, the Chinese invention patent application that Shen Qing Publication day is on July 13rd, 2016
《Broadband biasing circuit and method》In, disclose a kind of biasing circuit of the amplifier of cascode structure.Biasing circuit master
To be made up of resistance and electric capacity, constant bias voltage can only be provided.The program focuses on solution bias supply in certain bandwidth
In the range of when changing, transistor can still follow the change of power supply so as to obtain suitable biasing, be not related to improve linear
The content of degree and efficiency.
The content of the invention
Technical problems to be solved in this application are to provide a kind of radio-frequency power amplifier, with high power, high efficiency with
The characteristics of high linearity.
To solve above-mentioned technical problem, this application provides a kind of adaptive-biased radio-frequency power amplifier, including it is inclined
Circuits and power stage amplifying circuit.
The biasing circuit includes diode one, resistance one and electric capacity one, for for the crystal in power stage amplifying circuit
Pipe two provides dynamic bias voltage；Running voltage one connects one end of resistance one, and the other end of resistance one is used as biasing circuit
Outfan；Running voltage two connects the anode of diode one, and the negative electrode of diode one connects the outfan of biasing circuit；Biased electrical
The outfan on road is also grounded by electric capacity one；The value of running voltage two makes diode one be defaulted as critical conduction mode.
The power stage amplifying circuit includes transistor one and transistor two, using cascode structure；Transistor one is adopted
Common source connection is used, its grid receives radio-frequency input signals；Transistor two adopts common gate connection, its drain electrode output drain voltage
Two.
Or, the diode one in the biasing circuit is changed to transistor three.The grid and drain electrode short circuit of transistor three, phase
When in the anode of diode；Negative electrode of the source electrode of transistor three equivalent to diode.Or, running voltage four connects transistor three
Grid, running voltage five connects the drain electrode of transistor three, and the source electrode of transistor three connects the outfan of biasing circuit.Running voltage two
Value or the value of running voltage four and running voltage five cause transistor three to be defaulted as critical conduction mode.
Further, it is described adaptive-biased to refer to：As the power of radio-frequency input signals increases, power stage amplifying circuit
The output signal voltage amplitude of oscillation increase therewith, the coupled voltages amplitude of oscillation for being coupled to the grid of transistor two also increases therewith；Straight
During stream biasing, diode one or transistor three are critical conduction mode；When the negative electrode of diode one or the source electrode of transistor three are folded
Plus after coupled voltages, when diode one or transistor three switch to and the when of conducting and the state ended, diode one or transistor three
The DC component of electric current during conducting flows through resistance one, and pressure drop of the DC component on resistance one for flowing through the electric current of resistance one is folded
Plus running voltage is once constituting the dynamic bias voltage that biasing circuit is provided；Electricity when diode one or transistor three are turned on
Levelling average increases as input power increases, and the meansigma methodss of the dynamic bias voltage increase therewith.
The radio-frequency power amplifier main innovation that the application is provided is biasing circuit, and the biasing circuit is tied with cascade
The power stage amplifying circuit of structure is engaged, and is that the transistor two of common gate connection provides adaptive dynamic bias voltage.Crystal
The grid voltage of pipe two is mainly made up of three parts：One be biasing circuit provide DC offset voltage i.e. running voltage one, two
It is to flow through the dynamic electric voltage that the dynamic current of resistance one is produced, three is the exchange coupling that the drain voltage of transistor two is coupled to grid
Close voltage.Self adaptation is embodied in：When the power of radio-frequency input signals is less, by diode one or the average electricity of transistor three
Stream is less, and the dynamic current for flowing through resistance one is also less, therefore the dynamic electric voltage formed on resistance one is less, and biasing circuit is carried
For dynamic bias voltage it is also less.When the power of radio-frequency input signals is larger, by the flat of diode one or transistor three
Electric current is larger, and the dynamic current for flowing through resistance one is also larger, therefore the dynamic electric voltage formed on resistance one is larger, biased electrical
The dynamic bias voltage that road provides is also larger, reduces the conducting resistance and conduction voltage drop of transistor two.Thus, the application is provided
Radio-frequency power amplifier delay act primarily as power amplification effect transistor one gain compression, improve 1dB compression points
Corresponding output, additionally it is possible to the phase distortion that produced due to nonlinear capacitance of reduction, has been finally reached high power, efficiently
The design object of rate and high linearity.
Description of the drawings
Fig. 1 is the gain-output power curve schematic diagram of single metal-oxide-semiconductor power amplifier.
Fig. 2 is the structural representation of the radio-frequency power amplifier of cascode structure.
Fig. 3 is the structural representation of the embodiment one of the radio-frequency power amplifier that the application is provided.
Fig. 3 a are a kind of distressed structure schematic diagrams of embodiments herein one.
Fig. 4 is the operation principle schematic diagram of embodiments herein one.
Fig. 5 a, Fig. 5 b are respectively the grid voltage of transistor two, gain and outputs in embodiments herein one
Curve synoptic diagram.
Fig. 6 is the structural representation of the embodiment two of the radio-frequency power amplifier that the application is provided.
Fig. 7 is the structural representation of the embodiment three of the radio-frequency power amplifier that the application is provided.
Fig. 8 is the structural representation of the example IV of the radio-frequency power amplifier that the application is provided.
Description of reference numerals in figure：VB2 is running voltage one；VB22 is running voltage two；VDD is running voltage three；
VBM3 is running voltage four；VD3 is running voltage five；RFin is radio-frequency input signals；RFout is radio frequency output signal；R is electricity
Resistance；C is electric capacity；L is inductance；D is diode；M is transistor；VG is grid voltage；VD is drain voltage.
Specific embodiment
Fig. 3 is referred to, this is the embodiment one of the radio-frequency power amplifier that the application is provided.The radio-frequency power amplifier
Including biasing circuit and power stage amplifying circuit.To clearly describe, match circuit is also schematically show in Fig. 3.
The biasing circuit includes the R1 of resistance one, the D1 of diode one and the C1 of electric capacity one, for in power stage amplifying circuit
The M2 of transistor two provide dynamic bias voltage.The VB2 of running voltage one connects one end of the R1 of resistance one, the other end of the R1 of resistance one
Dynamic bias voltage is provided as the outfan of biasing circuit for the M2 of transistor two.The dynamic bias voltage includes static work
The VB2 of voltage one and the dynamic electric voltage produced by the dynamic current of the R1 of resistance one, the dynamic current is referred to and flows through resistance one
The DC component of the electric current of R1.The grid voltage VG2 of the M2 of transistor two is then the dynamic bias voltage provided in biasing circuit
On the basis of increase the M2 of transistor two grid from drain electrode coupling come coupled voltages.The VB22 of running voltage two connects the D1 of diode one
Anode, the negative electrode of the D1 of diode one connects the outfan of biasing circuit.The outfan of biasing circuit is also connect by the C1 of electric capacity one
Ground.The VB2 of running voltage one and the VB22 of running voltage two keep constant, and the value of the VB22 of running voltage two is approximately equal to defeated without radio frequency
The threshold voltage sum of the grid voltage VG2 of the M2 of the transistor two and D1 of diode one when entering signal RFin.Therefore without radio frequency
During input signal RFin, the D1 of diode one is in critical conduction mode, i.e., in cut-off and the critical state for turning on.
The power stage amplifying circuit includes the M1 of the transistor one and M2 of transistor two, using cascode structure.Transistor
One M1 adopts common source connection, its source ground, its grid to receive radio frequency input letter as the input of power stage amplifying circuit
Number RFin, its drain electrode exports source electrodes of the VD1 of drain voltage one to the M2 of transistor two.The M2 of transistor two adopts common gate connection, its
Grid receives the dynamic bias voltage of biasing circuit output, the drain voltage one of the drain electrode output of its source electrode receiving crystal pipe one M1
VD1, its drain electrode externally exports the VD2 of drain voltage two as the outfan of power stage amplifying circuit.The transistor can be adopted
The devices such as field-effect transistor (FET), bipolar transistor (BJT).The M1 of transistor one is operated in AB quasi-modes, rise it is main across
Lead amplification.The output loading of the M2 of transistor two and radio-frequency power amplifier integrally can be regarded as being superimposed upon transistor one
A load on M1, for sharing the running voltage of the M1 of transistor one under the high-power amplitude of oscillation, it is to avoid each transistor is breakdown.
Simultaneously the M2 of transistor two has voltage amplification function, improves the power gain of radio-frequency power amplifier.In DC static biased electrical
Pressure effect under, the M1 of the transistor one and M2 of transistor two if field-effect transistor is biased in saturation region, if ambipolar
Transistor is biased in linear zone, and the saturation region of field-effect transistor or the linear zone of bipolar transistor may be collectively referred to as high increasing
Beneficial magnifying state.
The match circuit is output matching network, and the VD2 of drain voltage two that power stage amplifying circuit is exported is hindered
Anti- matching obtains radio frequency output signal RFout.The VDD of running voltage three is loaded into radio-frequency power amplifier by output matching network
On.
In the embodiment one of the radio-frequency power amplifier shown in Fig. 3, as radio-frequency input signals RFin gradually increases, crystal
The drain voltage VD2 of the M2 of pipe two is also radio-frequency voltage, and the amplitude of oscillation gradually increases.The radio-frequency voltage coupling of the drain electrode of the M2 of transistor two
Grid is closed, therefore the radio-frequency voltage amplitude of oscillation that the coupling of the grid of the M2 of transistor two comes also gradually increases.The grid of the M2 of transistor two
On the one hand the radio-frequency voltage that pole coupling comes produces radio-frequency current in the grid of the M2 of transistor two, on the other hand on the D1 of diode one
Produce pulse current.The radio-frequency current of the grid of the M2 of transistor two is most of to arrive ground by the C1 of electric capacity one streams.The D1's of diode one
Pulse current has DC component and AC compounent, and DC component therein is flowed out by the R1 of resistance one.Flow through the R1's of resistance one
Electric current also has DC component and AC compounent, and DC component therein is the direct current point of the pulse current that the D1 of diode one is produced
Amount with the increase of radio-frequency input signals RFin with increasing.The DC component for flowing through the electric current of the R1 of resistance one is exactly with input
The dynamic current of power dynamics, the dynamic current flows through the R1 of resistance one and forms dynamic electric voltage.The dynamic electric voltage superposition is static
DC voltage is the dynamic bias voltage that the VB2 of running voltage one just constitutes whole biasing circuit output.Therefore, the M2 of transistor two
Grid voltage VG2 be made up of three parts：Part I is quiescent direct current voltage, and Part II is aforesaid dynamic electric voltage, the
Three parts are the radio-frequency voltages that the grid of the M2 of transistor two comes from drain electrode coupling.
Fig. 3 a are referred to, this is the distressed structure of the embodiment one of the radio-frequency power amplifier that the application is provided.The deformation
The D1 of diode one in biasing circuit has mainly been changed to the M3 of transistor three by structure.The first mode of texturing (not shown) is：
The grid and drain electrode short circuit of the M3 of transistor three, equivalent to the anode of diode；The source electrode of the M3 of transistor three is equivalent to diode
Negative electrode.Second mode of texturing be：The grid of the M3 of transistor three meets the VBM3 of running voltage four, and drain electrode connects the VD3 of running voltage five, source
Pole connects the outfan of biasing circuit.The dynamic bias voltage that now biasing circuit is provided also includes static running voltage one
VB2 and the dynamic electric voltage produced by the dynamic current of the R1 of resistance one.The dynamic current refers to the electricity for flowing through the R1 of resistance one
The DC component of stream, that is, the DC component of the pulse current of the M3 of transistor three generations.The grid voltage VG2 of the M2 of transistor two
It is then to increase the coupling that the grid of the M2 of transistor two comes from drain electrode coupling on the basis of the dynamic bias voltage that biasing circuit is provided
Close voltage.The M3 of transistor three in both the above mode of texturing is operated in critical conduction mode, that is, in cut-off and leads
Logical intermediateness.The grid of the M3 of transistor three is connected respectively different running voltages by second mode of texturing from drain electrode, can
To reduce impact of the drain current to grid voltage.
Fig. 4 is referred to, the operation principle of the embodiment one of the radio-frequency power amplifier that the application is provided is as follows.Radio frequency is input into
Signal RFin is entered as the input of power stage amplifying circuit from the grid of the M1 of transistor one.The output of power stage amplifying circuit
It is exactly the drain voltage VD2 of the M2 of transistor two, drain voltage VD2 is coupled to transistor by the grid capacitance of the M2 of transistor two
The grid of two M2.As not radio-frequency input signals RFin, the drain voltage VD2 of the M2 of transistor two does not just have radiofrequency signal yet,
Also radiofrequency signal would not is coupled to the grid of the M2 of transistor two, now the grid voltage VG2 of the M2 of transistor two makes diode
The one D1 or M3 of transistor three is the state of critical conduction.When there is radio-frequency input signals RFin, the drain voltage of the M2 of transistor two
VD2 also has radiofrequency signal, and radiofrequency signal will be coupled to the grid of the M2 of transistor two by the grid capacitance of the M2 of transistor two.
The wave trough position of the coupled voltages of the grid of the M2 of transistor two, grid voltage VG2 (i.e. the moon of the D1 of diode one of the M2 of transistor two
The source voltage of pole tension or the M3 of transistor three) diminish, therefore the D1 of the diode one or M3 of transistor three conductings.In the M2 of transistor two
Grid coupled voltages crest location, the grid voltage VG2 of the M2 of transistor two becomes big, therefore the D1 of diode one or transistor
Three M3 end.Therefore when there is radio-frequency input signals RFin, when the D1 of diode one or the M3 of transistor three in biasing circuit is in
And the state ended when turning on.When the D1 of the diode one or M3 of transistor three is turned on, the D1 of diode one or transistor three are flow through
The DC component of the electric current of M3 is flowed out by the R1 of resistance one.The DC component of electric current of the R1 of resistance one is flow through due to following input work
Rate changes and changes, therefore referred to as dynamic current.The dynamic current forms dynamic electric voltage in the R1 of resistance one.The dynamic electric voltage superposition
The VB2 of running voltage one is the dynamic bias voltage of the grid that biasing circuit is supplied to the M2 of transistor two.In general, radio frequency is defeated
The power for entering signal RFin is bigger, and the voltage swing of the drain voltage VD2 of the M2 of transistor two is also bigger, is coupled to transistor two
The amplitude of oscillation of the coupled voltages of the grid of M2 is also bigger, by the average current of the D1 of diode one or the M3 of transistor three also more
Greatly, the meansigma methodss of the grid voltage VG2 of the M2 of transistor two are also bigger.
As the power of radio-frequency input signals RFin increases, the drain electrode output current of the M1 of transistor one also increases therewith.It is brilliant
In order to ensure to export bigger drain current, overdrive voltage (overdrive voltage) increases the M2 of body pipe two, therefore crystal
The VD1 of drain voltage one of the M1 of pipe one is gradually reduced.The VD1 of drain voltage one of the M1 of transistor one reduces, equivalent to the M1 of transistor one
Supply voltage reduce, therefore can cause the M1 of transistor one drain electrode output current the amplitude of oscillation reduction, this results in transistor one
There is gain compression in M1.
Equally it is that the grid voltage VG2's of the M2 of transistor two is flat as the power of radio-frequency input signals RFin continues to increase
Average increases therewith, and the conducting resistance for making the M2 of transistor two diminishes, and then makes the conduction voltage drop of the M2 of transistor two diminish, so as to
So that the VD1 of drain voltage one of the M1 of transistor one postpones to decline, the gain compression area of the M1 of transistor one is also just delayed, that is, caused
The corresponding output increase of 1dB compression points of the M1 of transistor one.This also increases the linearity of power amplifier.
The embodiment one of the radio-frequency power amplifier shown in Fig. 3 can also to a certain extent improve amplitude modulation-phase modulation (AM-PM)
Performance, realizes gain extension, further improves the corresponding output power value of 1dB compression points.First, the C1 of electric capacity one and transistor two
The grid capacitance of M2 constitutes a capacitive branch for being connected in series to ground, the VB2 of one R1 isolated working voltages of the resistance one and M2 of transistor two
Between radiofrequency signal.Wherein, the grid capacitance of the M2 of transistor two is nonlinear capacitance, and it is always equivalent with connecting for the C1 of electric capacity one
Electric capacity is also nonlinear capacitance.But the non-linear grid capacitance less than the M2 of transistor two of total capacitance of connecting is non-linear, and
C1 is less for electric capacity one, and the linearity of total capacitance of connecting is less, and the amplitude modulation being induced by it-phase modulation distortion is less.Secondly, electric capacity
The partial pressure effect of one C1 reduces the radio frequency gate source voltage of the M2 of transistor two, thus the M2 of transistor two in small-signal from transistor
Two M2 source electrodes make the source electrode under the M2 small-signals of transistor two to the voltage gain of drain to the gain reduction of the M2 drains of transistor two
Jie Jin gain during big signal, the M2 source electrodes of transistor two are improve to the linearity of the voltage gain of drain.Radio-frequency power amplifies
It is linear amplification that device is input to output, therefore the M1 grids of transistor one also improve to the linearity of the gain of drain.Transistor one
There is Miller capacitance in the grid of M1, the linearity of this Miller capacitance also improves and improve because of the linearity of gain to drain,
And then amplitude modulation-phase modulation the distortion of reduction radio-frequency power amplifier.Again, the grid capacitance partial pressure of the C1 of electric capacity one and the M2 of transistor two
The grid voltage VG2 of the M2 of transistor two is formed, it is dynamic that grid voltage VG2 drives the D1 of the diode one or M3 of transistor three to produce
Diode current or source transistor leakage current.The R1 of resistance one also provides the VB2 of running voltage one of static state, and causes diode one electric
Stream or the source-drain current of transistor three produce pressure drop, both superimposed dynamic bias voltages for just producing the M2 of transistor two.Transistor
The grid voltage VG2 of two M2 is divided into three parts：One is the static bias voltage from the VB2 of running voltage one, and two is to flow through resistance
The pressure drop that the dynamic current of one R1 is produced on the R1 of resistance one, this part be dynamic bias voltage only calculate due to diode one or
The average voltage change that three monocycle of transistor average current dynamic change is produced, three are coupled by the drain electrode of the M2 of transistor two
To the RF-coupled voltage of grid.
Refer to Fig. 5 a, this be the application provide radio-frequency power amplifier embodiment one in the M2 of transistor two grid
The meansigma methodss of voltage VG2 and the curve synoptic diagram of output.Dotted line therein is represented using feelings during traditional biasing circuit
Condition, traditional biasing circuit provides substantially invariable bias voltage, is not coupled to crystalline substance by the output signal of power stage amplifying circuit
The impact of the coupled voltages of body pipe M2 grids.Solid line represents the situation during biasing circuit using the application, as radio frequency is input into
The power increase of signal RFin, the amplitude of oscillation of the output signal of power stage amplifying circuit also increases, and is coupled to transistor M2 grids
The amplitude of oscillation of coupled voltages also increases, and average currents of the D1 of the diode one or M3 of transistor three in conducting also increases, the R1 of resistance one
Average current and then increase so that the meansigma methodss of the grid voltage VG2 of the M2 of transistor two also increase.
Refer to Fig. 5 b, this be the radio-frequency power amplifier that the application is provided embodiment one in gain and output
Curve synoptic diagram.Dotted line therein is represented using gain during traditional biasing circuit, similar with the curve B in Fig. 1.Solid line table
Show the gain during biasing circuit using the application, it is clear that so that the corresponding output of 1dB compression points becomes big, that is, delay
1dB compression points, also just improve maximum linear output.The M1 of transistor one is operated in AB quasi-modes, it is also possible in being Fig. 1
Curve A there is no gain extension area like that, now the application can equally cause the corresponding output of 1dB compression points to become big.
Fig. 6 is referred to, this is the embodiment two of the radio-frequency power amplifier that the application is provided.Embodiment two and embodiment one
Compare, difference is only that power stage amplifying circuit has been changed to into three-level cascode structure by two grades of cascode structures, that is,
The M4 of transistor four of a common gate connection is reconnected in the drain electrode of the M2 of transistor two.The VDD of running voltage three can so be improved
And then output is improved, the M4 of transistor four for newly increasing mainly shares voltage swing as the M2 of transistor two.It is newly-increased
The biasing circuits two that arrange of the M4 of transistor four can be identical with biasing circuit one, it is also possible to omit diode and only include resistance
Electric capacity.Based on same principle, power stage amplifying circuit can also be changed to more stages cascode structure, the common gate connection for newly increasing
Transistor be more suitable for using the biasing circuit for omitting diode or transistor.
Fig. 7 is referred to, this is the embodiment three of the radio-frequency power amplifier that the application is provided.Embodiment three and embodiment one
Compare, difference be only between biasing circuit and power stage amplifying circuit, and/or power stage amplifying circuit and match circuit it
Between increased a LC series resonance branch road.Every LC series resonances one tunable capacitor VC1 (or VC2) of route and an electricity
Sense L1 (or L2) is composed in series, and is grounded.By the capacitance for adjusting tunable capacitor VC1, VC2, can be by LC series resonance branch roads
Resonant frequency be set to radio-frequency power amplifier operating frequency order harmonic frequencies, for example second harmonic frequency, three times it is humorous
Wave frequency, so as to play a part of to suppress harmonic wave.
Fig. 8 is referred to, this is the example IV of the radio-frequency power amplifier that the application is provided.Example IV and embodiment one
Compare, difference is only that power stage amplifying circuit has been changed to into differential configuration.Differential configuration is conducive to suppressing the generation of even-order harmonic
With the differential signal for reducing common-mode node.
Above the technical characteristic of each embodiment can be mutually combined.For example by the LC series resonances branch road of embodiment three with
The differential configuration power stage amplifying circuit of example IV is combined, and the resonant frequency of two LC series resonance branch roads is set respectively
For third harmonic frequencies, quintuple harmonics frequency, you can obtain ideal harmonic suppression effect.
The purpose of the application is to provide the radio-frequency power amplifier of a kind of high power, high efficiency and high linearity.First, originally
The radio-frequency power amplifier that application is provided employs the power stage amplifying circuit of cascode common gate structure, improves running voltage, because
And output is improve with pressure performance.Secondly, the radio-frequency power amplifier that the application is provided employs adaptive-biased electricity
Road, has delayed the corresponding output power value of 1dB compression points, thus improves the linearity and maximum linear output.When 1dB pressures
After the corresponding output of point reduction is improved, identical linear power can be obtained by improving load impedance, so as to improve effect
Rate.Again, biasing circuit reduces the amplitude modulation and phase modulation distortion of amplifier by capacitances in series and the linearity for heightening Miller capacitance,
Further improve the linearity of amplifier.
The preferred embodiment of the application is these are only, is not used to limit the application.For those skilled in the art comes
Say, the application there can be various modifications and variations.All any modification, equivalents within spirit herein and principle, made
Replace, improve etc., should be included within the protection domain of the application.
Claims (10)
1. a kind of adaptive-biased radio-frequency power amplifier, is characterized in that, including biasing circuit and power stage amplifying circuit；
The biasing circuit includes diode one, resistance one and electric capacity one, for for the transistor two in power stage amplifying circuit
Dynamic bias voltage is provided；Running voltage one connects one end of resistance one, the output of the other end of resistance one as biasing circuit
End；Running voltage two connects the anode of diode one, and the negative electrode of diode one connects the outfan of biasing circuit；Biasing circuit
Outfan is also grounded by electric capacity one；The value of running voltage two makes diode one be defaulted as critical conduction mode；
The power stage amplifying circuit includes transistor one and transistor two, using cascode structure；Transistor one is using altogether
Source electrode connection, its grid receives radio-frequency input signals；Transistor two adopts common gate connection, its drain electrode output drain voltage two.
2. adaptive-biased radio-frequency power amplifier according to claim 1, is characterized in that, in the biasing circuit
Diode one is changed to transistor three；The grid and drain electrode short circuit of transistor three, equivalent to the anode of diode；The source of transistor three
Negative electrode of the pole equivalent to diode；
Or, running voltage four connects the grid of transistor three, and running voltage five connects the drain electrode of transistor three, the source electrode of transistor three
The outfan of connection biasing circuit；
It is critical that the value of running voltage two or the value of running voltage four and running voltage five cause transistor three to be defaulted as
Conducting state.
3. adaptive-biased radio-frequency power amplifier according to claim 1 and 2, is characterized in that, the self adaptation is inclined
Put and refer to：As the power of radio-frequency input signals increases, the output signal voltage amplitude of oscillation of power stage amplifying circuit increases therewith, coupling
The coupled voltages amplitude of oscillation for closing the grid of transistor two also increases therewith；In direct current biasing, diode one or transistor three are
Critical conduction mode；When diode one negative electrode or transistor three source electrode superposition coupled voltages after, diode one or transistor
Three when switching to and the DC component of the electric current of the when of conducting and the state ended, diode one or transistor three when turning on flows through resistance
One, flow through resistance once electric current DC component on resistance one pressure drop superposition running voltage one constitute biasing circuit institute
The dynamic bias voltage of offer；Current average when diode one or transistor three are turned on increases as input power increases
Greatly, the meansigma methodss of the dynamic bias voltage increase therewith.
4. adaptive-biased radio-frequency power amplifier according to claim 3, is characterized in that, with radio-frequency input signals
Power continue increase, conducting resistance and the conduction voltage drop of transistor two diminish, so that the drain voltage of transistor one
One postpones to decline, and has also just delayed the gain compression of transistor one.
5. adaptive-biased radio-frequency power amplifier according to claim 1 and 2, is characterized in that, electric capacity one and crystal
Pipe two constitutes a capacitive branch for being connected in series to ground, and this capacitive branch reduces the grid non-linear capacitor of transistor two and introduces
Phase distortion.
6. adaptive-biased radio-frequency power amplifier according to claim 1 and 2, is characterized in that, in direct current biasing electricity
Under pressure effect, transistor one and the equal quiescent biasing of transistor two are in plus and blowup state；The plus and blowup state is to field
Saturation region is referred to for effect transistor, linear zone is referred to for bipolar transistor.
7. adaptive-biased radio-frequency power amplifier according to claim 1 and 2, is characterized in that, the power stage is put
Big circuit has been changed to multistage cascode structure more than three-level, that is, reconnects one or more in the drain electrode of transistor two
The transistor of common gate connection, omits diode or transistor in the biasing circuit of the transistor of the common gate connection for newly increasing.
8. adaptive-biased radio-frequency power amplifier according to claim 1 and 2, is characterized in that, biasing circuit with
LC series resonance branch roads are increased between power stage amplifying circuit, and/or between power stage amplifying circuit and match circuit；Often
Bar LC series resonances one electric capacity of route and an inductance are composed in series, and are grounded.
9. adaptive-biased radio-frequency power amplifier according to claim 1, is characterized in that, the power stage amplifies electricity
Road is changed to differential configuration.
10. adaptive-biased radio-frequency power amplifier according to claim 1 and 2, is characterized in that, the transistor is adopted
With one or more in field effect transistor, bipolar transistor.
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| CN201611020276.1A CN106571780B (en) | 2016-11-17 | 2016-11-17 | A kind of adaptive-biased radio-frequency power amplifier |
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