CN107147365B - Class-E power amplifier - Google Patents
Class-E power amplifier Download PDFInfo
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- CN107147365B CN107147365B CN201710290390.4A CN201710290390A CN107147365B CN 107147365 B CN107147365 B CN 107147365B CN 201710290390 A CN201710290390 A CN 201710290390A CN 107147365 B CN107147365 B CN 107147365B
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- H—ELECTRICITY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
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- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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Abstract
The invention discloses a Class-E power amplifier.A fourth harmonic filtering circuit formed by connecting an inductor and a capacitor in series is adopted at the output end of a driving stage of the power amplifier, so that the voltage loaded to the gate end of a common source transistor of an output stage is closer to a square wave; a self-biasing circuit composed of diodes is adopted at the grid end of the common grid transistor of the output stage. The invention can adjust the output power of the power amplifier according to different power supply voltages. When the power supply voltage is high, the output power of the power amplifier is higher, and when the power supply voltage is low, the output power is lower, so that the linearization of the switching power amplifier is realized.
Description
Technical Field
The invention relates to the field of wireless communication, which is applied to radio frequency transmitters in 3G and 4G communication and wireless local area networks, in particular to a Class-E power amplifier in the radio frequency transmitter.
Background
With the rapid development of wireless communication technology, wireless terminals such as mobile phones have become a part of people's daily life. Current wireless communication systems require low cost, high efficiency, high integration, and high reliability devices. To achieve these functions, integrating a power amplifier into the whole transmitter is a good solution. Furthermore, since the power amplifier is the last module in the transmitter chain and also the module consuming the most power, the performance of the whole power amplifier determines the performance of the transmitter. The high-efficiency tapping and discharging can save power consumption, prolong the service life of a battery and increase the user experience.
With the reduction of spectrum resources, modern wireless communication systems often adopt a signal modulation mode combining amplitude modulation and phase modulation to improve the utilization rate of a spectrum, such as modulation modes such as OFDM. These modulation schemes contain more information in a unit bandwidth than the conventional modulation scheme, but the envelope variation is brought about, so that the signal has a very high peak-to-average ratio, which results in that the power amplifier needs to back off a large amount of power to meet the linearity requirement of the high peak-to-average ratio modulation signal. The power back-off in turn causes the power amplifier to operate at a lower output power most of the time and therefore very inefficient. To solve this problem, the academia has proposed a polar transmitter circuit structure based on a switching power amplifier, as shown in fig. 1. The modulated signal is first changed into a phase-modulated signal by a limiter. At the same time, the amplitude of the modulated signal is detected by the envelope detector. Thus the amplitude information and the phase information are separated. The nonlinear power amplifier generally adopts a Class-E power amplifier. Since the output power of the Class-E power amplifier is proportional to the square of the supply voltage, the envelope is loaded onto the supply voltage of the non-linear power amplifier, so that the output of the power amplifier also contains amplitude information. The polar transmitter has the advantage of using a high-efficiency switch power amplifier. Under the condition of not influencing the efficiency of the switch power amplifier, the switch power amplifier is linearized. This result solves the contradiction between transmitter linearization and efficiency.
In polar transmitters, the power supply voltage of Class-E power amplifiers is constantly changing. Since the highest voltage of the Class-E tapping and discharging drain terminal can reach 3.56 times of the power supply voltage, in order to improve the tapping and discharging reliability and prevent the breakdown of a transistor, a self-biasing technology is generally adopted. However, the varying power supply voltage causes Class-E to drop too much when the voltage of the power supply is lower. Two difficulties that the efficiency of the power amplifier is low due to the long switching time of the switch in the power amplifier need to be solved urgently.
Disclosure of Invention
Technical problem to be solved
The invention aims to provide a Class-E power amplifier, which is used for solving the problems of long switching time and low power amplification efficiency.
(II) technical scheme
The invention provides a Class-E power amplifier, which comprises an input matching network, a driving stage, a second harmonic filtering module, an output stage, a higher harmonic filtering module and an output matching network which are sequentially connected according to a signal flow, wherein the power amplifier also comprises a fourth harmonic filtering module which is connected in parallel at two sides of the second harmonic filtering module and is used for enabling a driving signal to be a square wave and shortening the switching time of a switch.
Wherein, the fourth harmonic filtering module comprises a fourth inductor L connected in series4And a fourth capacitor C4Fourth capacitor C4One end of which is grounded and the other end of which is connected with a fourth inductor L4One end of (1), a fourth inductance L4The other end of the driving stage; wherein:
fourth inductor L4The device is used for supplying direct current and blocking alternating current;
fourth capacitor C4The switch is used for alternating current and direct current.
The second harmonic filtering module is used for filtering a second harmonic component and comprises a third inductor L3And a third capacitor C3Third capacitor C3One end of which is grounded and the other end of which is connected with a third inductor L3One terminal of (1), a third inductance L3The other end of the driving stage;
third inductance L3The device is used for supplying direct current and blocking alternating current;
third capacitor C3The switch is used for alternating current and direct current.
The Class-E power amplifier also comprises a diode self-bias circuit, wherein the output end of the diode self-bias circuit is connected with the grid end of the output stage common-grid transistor and used for providing reasonable direct current bias for the output stage common-grid transistor and preventing the efficiency of the power amplifier from being reduced too much when the power supply voltage becomes low.
Wherein the diode self-bias circuit comprises a fifth transistor M connected in series5And a sixth transistor M6(ii) a Fifth transistor M5Has its source terminal grounded, and a fifth transistor M5And a sixth transistor M6Is disconnected, a sixth transistor M6The source terminal of the transformer is connected with high level,fifth transistor M5Is connected to the gate terminal, a sixth transistor M6The drain terminal and the gate terminal of the output stage common gate transistor are connected, and the common drain terminal is connected with the gate terminal of the output stage common gate transistor.
Wherein the output stage comprises a sixth inductor L connected in series6A fourth transistor M4And a third transistor M3(ii) a Sixth inductance L6One end is connected with a high level and a sixth inductor L6Is connected to the fourth transistor M4Drain terminal of, the fourth transistor M4Source terminal and third transistor M3Is connected to the drain terminal of the third transistor M3The source end of the transformer is grounded; a second resistor R2And a sixth capacitor C6Is connected in parallel to the fourth transistor M4And a third transistor M3Across the second resistor R2And a sixth capacitance C6Connected in series, a second resistor R2Is connected to the fourth transistor M4A drain terminal of the second resistor R2Is connected with a sixth capacitor C6One terminal of (C), a sixth capacitor C6Is connected to the third transistor M3A ground terminal of (1); a seventh capacitor C7Is connected in parallel to the fourth transistor M4Both ends of (a); fourth transistor M4Gate terminal and second resistor R2And a sixth capacitance C6A common port connected to the drain terminal of the diode self-bias circuit, and a fourth transistor M4I.e. a common gate transistor.
Wherein the driving stage comprises a second inductor L connected in series2A second transistor M2And a first transistor M1(ii) a Second inductance L2One end is connected with the high level and the other end is connected with the second transistor M2The drain terminal of (1); second transistor M2Is connected to the first transistor M1Drain terminal of the first transistor M1The source end of the transformer is grounded; a first resistor R1And a second capacitor C2Connected in series and then connected in parallel with the second inductor L2Second transistor M2And a first transistor M1Across the first resistor R1One end is connected with a high level and the other end is connected with a second capacitor C2One terminal of (C), a second capacitor C2The other end of the first and second electrodes is grounded; second transistor M2Is connected with a first resistor R1And a second capacitor C2A common terminal, a first transistor M1The grid end of the grid is connected with the input matching network; second body pipe M2The drain terminal of the inductor is connected with a third inductor L simultaneously3And a fourth inductance L4Connected to one end of the driver stage.
(III) advantageous effects
The Class-E power amplifier has the positive effects that:
(1) according to the Class-E power amplifier, the fourth harmonic filtering circuit is adopted at the output of the driving stage, so that the driving signal is closer to a square wave, and the switching time of the switch is shortened.
(2) According to the Class-E power amplifier, the self-biasing technology formed by the diodes is adopted at the grid end of the common-grid transistor of the output stage, so that the problems that when the power supply voltage is too low, the bias voltage is too low, and the power amplification efficiency is too low due to too low bias voltage are solved.
Drawings
Fig. 1 is a block diagram of a polar transmitter circuit according to an embodiment of the present invention.
Fig. 2 is a circuit diagram of a Class-E power amplifier according to an embodiment of the present invention.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The problem of envelope variation exists in a signal modulation mode combining amplitude modulation and phase modulation, so that a signal has a very high peak-to-average ratio, and in order to meet the linearity requirement of a high peak-to-average ratio modulation signal, a power amplifier needs to back off a large amount of power, so that the power amplifier works in a small output power state most of the time, and the efficiency is very low. To solve the problem of low efficiency of linear power amplifiers, polar transmitters are usually used.
Fig. 1 is a block diagram of a polar transmitter circuit according to an embodiment of the present invention. As shown in fig. 1, a modulated signal is first changed into a phase modulated signal through a limiter, and the phase modulated signal enters a signal input port of a nonlinear power amplifier after being modulated and delayed by a delayer; meanwhile, the amplitude of the modulation signal is detected by the envelope detector, the amplitude of the signal detected by the envelope detector is weak, the detected weak envelope signal is amplified by the amplitude amplifier, and then the amplified weak envelope signal enters a power supply voltage port of the nonlinear power amplifier. The action of the delayer enables the phase signal and the amplitude signal to enter the nonlinear power amplifier simultaneously. The common nonlinear power amplifier is a classic Class-E power amplifier.
On the basis of a classic Class-E circuit structure, the fourth harmonic filtering circuit is adopted at the output end of the driving stage, so that the voltage loaded to the gate end of the common source transistor of the output stage is closer to a square wave, the common source transistor of the output stage can be switched between on and off more quickly, the transition time of the switch is shortened, the overlapping of the voltage and the current at two ends of the switch is smaller, and the efficiency of the power amplifier is improved. The grid end of the common grid transistor of the output stage adopts a self-biasing circuit formed by diodes, so that when the power supply voltage of the output stage becomes lower, the grid end biasing voltage of the common grid transistor of the output stage can still keep a proper value, and when the power supply voltage of the output stage becomes lower, the efficiency backspacing of the power amplifier is smaller.
Figure 2 is a circuit block diagram of a Class-E power amplifier according to one embodiment of the present invention,
the Class-E power amplifier comprises an input matching network, a driving stage, a second harmonic filtering module, an output stage, a higher harmonic filtering module and an output matching network which are sequentially connected according to a signal flow, wherein the power amplifier also comprises a fourth harmonic filtering module which is connected in parallel to two sides of the second harmonic filtering module and is used for enabling a driving signal to be a square wave and shortening the switching time of a switch. Wherein, the fourth harmonic filtering module comprises a fourth inductor L connected in series4And a fourth capacitor C4Fourth capacitor C4One end of which is grounded and the other end of which is connected with a fourth inductor L4One end of (1), a fourth inductance L4The other end of the driving stage; fourth step ofInductor L4The device is used for supplying direct current and blocking alternating current; fourth capacitor C4The switch is used for alternating current and direct current.
The second harmonic filtering module is used for filtering the second harmonic component and comprises a third inductor L3And a third capacitor C3(ii) a Third capacitor C3One end of which is grounded and the other end of which is connected with a third inductor L3One terminal of (1), a third inductance L3The other end of the driving stage; third inductance L3The device is used for supplying direct current and blocking alternating current; third capacitor C3The switch is used for alternating current and direct current.
The Class-E power amplifier also comprises a diode self-bias circuit, wherein the output end of the diode self-bias circuit is connected with the grid end of the output stage common-grid transistor and used for providing reasonable direct current bias for the output stage common-grid transistor and preventing the efficiency of the power amplifier from being reduced too much when the power supply voltage becomes low.
Wherein the diode self-bias circuit comprises a fifth transistor M connected in series5And a sixth transistor M6(ii) a Fifth transistor M5Has its source terminal grounded, and a fifth transistor M5And a sixth transistor M6Is disconnected, a sixth transistor M6Is connected to high level, a fifth transistor M5Is connected to the gate terminal, a sixth transistor M6The drain terminal and the gate terminal of the output stage common gate transistor are connected, and the common drain terminal is connected with the gate terminal of the output stage common gate transistor.
Wherein the output stage comprises a sixth inductor L connected in series6A fourth transistor M4And a third transistor M3(ii) a Sixth inductance L6One end is connected with a high level and a sixth inductor L6Is connected to the fourth transistor M4Drain terminal of, the fourth transistor M4Source terminal and third transistor M3Is connected to the drain terminal of the third transistor M3The source end of the transformer is grounded; a second resistor R2And a sixth capacitor C6Is connected in parallel to the fourth transistor M4And a third transistor M3Across the second resistor R2And a sixth capacitance C6Connected in series, a second resistor R2Is connected to the fourth transistor M4A drain terminal of the second resistor R2Is connected with a sixth capacitor C6One terminal of (C), a sixth capacitor C6Is connected to the third transistor M3A ground terminal of (1); a seventh capacitor C7Is connected in parallel to the fourth transistor M4Both ends of (a); fourth transistor M4Gate terminal and second resistor R2And a sixth capacitance C6A common port connected to the drain terminal of the diode self-bias circuit, and a fourth transistor M4I.e. a common gate transistor.
Wherein the driving stage comprises a second inductor L connected in series2A second transistor M2And a first transistor M1(ii) a Second inductance L2One end is connected with the high level and the other end is connected with the second transistor M2The drain terminal of (1); second transistor M2Is connected to the first transistor M1Drain terminal of the first transistor M1The source end of the transformer is grounded; a first resistor R1And a second capacitor C2Connected in series and then connected in parallel with the second inductor L2Second transistor M2And a first transistor M1Across the first resistor R1One end is connected with a high level and the other end is connected with a second capacitor C2One terminal of (C), a second capacitor C2The other end of the first and second electrodes is grounded; second transistor M2Is connected with a first resistor R1And a second capacitor C2A common terminal, a first transistor M1The grid end of the grid is connected with the input matching network; second body pipe M2The drain terminal of the inductor is connected with a third inductor L simultaneously3And a fourth inductance L4Connected to one end of the driver stage.
The input matching network of the power amplifier comprises a first capacitor C1And a first inductor L1The input signal Vin, namely a connection port of the delayer and the nonlinear power amplifier, and the signal output by the delayer, which is used as the input signal Vin, enters the nonlinear power amplifier; a first capacitor C1One end is connected with an input signal Vin, and the other end is connected with a first inductor L1One end of (A)Inductance L1Is connected to the other terminal bias voltage Vbias1。
Wherein the driving stage comprises a second inductor L connected in series2A second transistor M2And a first transistor M1(ii) a Second inductance L2One end is connected with a high level VDD1And the other end is connected with a second transistor M2The drain terminal of (1); second transistor M2Is connected to the first transistor M1Drain terminal of the first transistor M1The source end of the transformer is grounded; a first resistor R1And a second capacitor C2Connected in series and then connected in parallel with the second inductor L2Second transistor M2And a first transistor M1Across the first resistor R1One end is connected with a high level VDD1The other end is connected with a second capacitor C2One terminal of (C), a second capacitor C2The other end of the first and second electrodes is grounded; second transistor M2Is connected with a first resistor R1And a second capacitor C2A common terminal, a first transistor M1The grid end of the grid is connected with the input matching network; second body pipe M2The drain terminal of the inductor is connected with a third inductor L simultaneously3And a fourth inductance L4Connected to one end of the driver stage.
Wherein, the higher harmonic filtering module comprises an eighth capacitor C8And a seventh inductor L7An eighth capacitor C8And a seventh inductance L7Connected in series, an eighth capacitor C8Is connected to the fourth transistor M in the output stage4The other end of the drain terminal is connected with a seventh inductor L7And the higher harmonic filtering module is used for filtering higher harmonics in a harmonic mode.
Wherein the output matching network comprises an eighth inductor L8And a ninth capacitor C9Eighth inductance L8And a ninth capacitor C9Connected in series, an eighth inductance L8And a seventh inductor L of the higher harmonic filtering module7Connected at one end to a ninth capacitor C9Is connected to a ninth capacitor C9The other end of the second inductor is grounded, and the output Vout of the whole Class-E power amplifier is an eighth inductor L8And a ninth capacitor C9To the common terminal of (a).
As shown, the power amplifier further comprises C5And L5，C5One end is connected with a third inductor L3And a fourth inductance L4One end of the driving stage is connected to the other end L5One end of, L5Is connected to the other terminal bias voltage Vbias2；C5The device is used for conducting alternating current and isolating direct current; l is5The effect of (2) is two: (1) d, direct current biasing; (2) to M3The gate-source parasitic capacitance of (2) generates resonance at the fundamental frequency. Wherein, VDD1＜VDD2＜VDD3；Vbias1＜Vbias2.
The square wave is composed of odd harmonics, assuming that the square wave has an angular frequency of ω0Written as the expression:
V(t)square＝a1cos(ω0t)+a3cos(3ω0t)+a5cos(5ω0t)+a7cos(7ω0t)……(1)
and the waveform expression of the output of the driving stage is as follows:
V(t)driver＝a0+a1cos(ω0t)+a2cos(2ω0t)+a3cos(3ω0t)+a4cos(4ω0t)+……(2)
ideally, the waveform output by the driving stage is desirably a square wave, and in practice, the waveform output by the driving stage contains harmonic components, and in order to make the output waveform of the driving stage closer to a square wave, the inductor L3And a capacitor C3At the second harmonic resonance, the largest even harmonic component is thus filtered out. But the fourth harmonic component is also relatively large, second only to the second harmonic component, and if it can be filtered out, the waveform of the output of the driving stage is much closer to a square wave. So that an inductor L is added at the output end of the driving stage4And a capacitor C4The fourth harmonic filtering circuit formed in series, namely:
so that the fourth harmonic is shorted to ground. The largest two harmonic components in the even harmonic components are filtered, and the output waveform of the driving stage at this time is:
V(t)driver＝a0+a1cos(ω0t)+a3cos(3ω0t)+a5cos(5ω0t)+a6cos(6ω0t)……(4)
therefore, the waveform of the output end of the driving stage is closer to the square wave, and the edge of the output waveform is steeper, so that the common-source transistor M of the output stage is enabled to be3Switching is performed faster and the overlap of voltage and current is reduced, thereby improving the efficiency of the power amplifier.
The power supply voltage of Class-E amplifier operating in polar transmitter varies with the envelope signal due to the transistor M of the output stage4Self-biasing is used. If there is no M5And M6The diode formed is self-biasing circuit, then transistor M4The dc bias voltage of the gate is equal to the supply voltage VDD3. When the power supply voltage VDD3As the envelope becomes very small, then transistor M4The dc bias voltage of the gate also becomes very small, which results in very small efficiency of the power amplifier. To solve this problem, a transistor M is added to the circuit5And M6The diode biasing circuit is formed. The diodes formed by the transistors are actually resistors, and the respective resistors have the size of 1/gm5And 1/gm6. And the magnitude of the transconductance is:
in the above formula, mu5，6For the transistor M5In terms of electron mobility, for the transistor M6In this case, the mobility of holes is referred to. c. CoxRepresentative is transistor M5And M6The gate oxide capacitance per unit area of the gate,
respectively represent transistors M5And M6Width to length ratio of (I)D5，6Represents a transistor M5And M6The magnitude of the drain current. It can be found by the formula (5) that the transistor M is changed5And M6The width-to-length ratio of (A) can change the corresponding transconductance, and further can change the transistor M5And M6The magnitude of the resistance of (c). According to the principle of circuit superposition, when only the supply voltage V is availableDD2When active, irrespective of the supply voltage VDD3At this time, the transistor M4Voltage of grid terminal
The size is as follows:
when only the power supply voltage V is availableDD3When active, irrespective of the supply voltage VDD2At this time, the transistor M4Voltage of grid terminal
The size is as follows:
thus the transistor M4Voltage of gate terminal G4Comprises the following steps:
as can be seen from (11), there is a power supply voltage VDD2So that when the supply voltage V is presentDD3When becoming very low, as long as the supply voltage V isDD2Transistor M5And a transistor M6Size and resistance R2Reasonable arrangement, so that the transistor M4Voltage of gate terminal G4It does not become too low and the power amplifier efficiency is prevented from decreasing too much. In this way, the resistor R can be passed2Realize self-bias and prevent the current from being applied to the power supply voltage VDD3Becomes too low, resulting in deterioration of the power amplifier efficiency. Further, a transistor M is used5And M6The voltage division ratio is realized, and the chip area is saved by using the resistor to realize voltage division.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A Class-E power amplifier comprises an input matching network, a driving stage, a second harmonic filtering module, an output stage, a higher harmonic filtering module and an output matching network which are sequentially connected according to a signal flow, wherein the power amplifier also comprises a fourth harmonic filtering module which is connected in parallel to two sides of the second harmonic filtering module and is used for enabling a driving signal to be a square wave and shortening the switching time of a switch;
the Class-E power amplifier also comprises a diode self-bias circuit, wherein the output end of the diode self-bias circuit is connected with the grid end of the output stage common-grid transistor and is used for providing reasonable direct current bias for the output stage common-grid transistor and preventing the efficiency of the power amplifier from being reduced too much when the power supply voltage becomes low;
wherein the diode self-biasing circuit comprises a fifth transistor (M) connected in series5) And a sixth transistor (M)6) (ii) a Fifth transistor (M)5) Is grounded, a fifth transistor (M)5) And a sixth transistor (M)6) Is connected to the drain of the sixth transistor (M)6) Is connected to a high level, a fifth transistor (M)5) Is connected to the gate terminal, a sixth transistor (M)6) Is connected to the gate terminal, and the common drain terminal is connected to the gate of the output stage common gate crystalAnd (4) an end.
2. The Class-E power amplifier according to claim 1, wherein said fourth harmonic filtering module comprises a fourth inductor (L) connected in series4) And a fourth capacitor (C)4) Fourth capacitance (C)4) One end of which is grounded and the other end of which is connected with a fourth inductor (L)4) One terminal of (1), a fourth inductance (L)4) The other end of the driving stage; wherein:
fourth inductor (L)4) The device is used for supplying direct current and blocking alternating current;
fourth capacitance (C)4) The switch is used for alternating current and direct current.
3. The Class-E power amplifier as recited in claim 2, wherein said second harmonic filtering module is configured to filter out second harmonic components and comprises a third inductor (L)3) And a third capacitor (C)3) Third capacitance (C)3) One end of which is grounded and the other end of which is connected with a third inductor (L)3) One terminal of (1), a third inductance (L)3) The other end of the driving stage;
third inductance (L)3) The device is used for supplying direct current and blocking alternating current;
third capacitance (C)3) The switch is used for alternating current and direct current.
4. The Class-E power amplifier as recited in claim 1, wherein said output stage comprises a sixth inductor (L) connected in series6) A fourth transistor (M)4) And a third transistor (M)3) (ii) a Sixth inductor (L)6) One end is connected with a high level, sixth inductor (L)6) Is connected to the fourth transistor (M)4) Drain terminal of (1), fourth transistor (M)4) Source terminal and third transistor (M)3) Is connected to the drain terminal of the third transistor (M)3) The source end of the transformer is grounded; a second resistor (R)2) And a sixth capacitor (C)6) Is connected in parallel to the fourth transistor (M)4) And a third transistor (M)3) Across the second resistor (R)2) And a sixth capacitance (C)6) Connected in series, a second resistor (R)2) One end of is connected with the fourthTransistor (M)4) Drain terminal of (1), second resistor (R)2) Is connected with a sixth capacitor (C)6) One terminal of (C), a sixth capacitance (C)6) Is connected to the third transistor (M)3) A ground terminal of (1); a seventh capacitor (C)7) Is connected in parallel to the fourth transistor (M)4) Both ends of (a); fourth transistor (M)4) And a second resistor (R)2) And a sixth capacitance (C)6) A common port connected to the drain terminal of the diode self-bias circuit, and a fourth transistor (M)4) I.e. a common gate transistor.
5. The Class-E power amplifier according to claim 2 or 3, wherein the driver stage comprises a second inductor (L) connected in series2) A second transistor (M)2) And a first transistor (M)1) (ii) a Second inductance (L)2) One end connected to high level and the other end connected to the second transistor (M)2) The drain terminal of (1); second transistor (M)2) Is connected to the first transistor (M)1) Drain terminal of (1), first transistor (M)1) The source end of the transformer is grounded; a first resistor (R)1) And a second capacitance (C)2) Connected in series and then connected in parallel to the second inductor (L)2) A second transistor (M)2) And a first transistor (M)1) Across the first resistor (R)1) One end is connected with high level and the other end is connected with a second capacitor (C)2) One terminal of (C), a second capacitor (C)2) The other end of the first and second electrodes is grounded; second transistor (M)2) Is connected to the first resistor (R)1) And a second capacitance (C)2) A common terminal, a first transistor (M)1) The grid end of the grid is connected with the input matching network; second body tube (M)2) Is connected to a third inductor (L) at the same time3) And a fourth inductance (L)4) Connected to one end of the driver stage.
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| CN109525207B (en) * | 2018-11-18 | 2020-06-19 | 湖南大学 | Radio frequency power amplifier suitable for 5G network |
| CN113014214A (en) * | 2021-03-15 | 2021-06-22 | 西安电子科技大学 | Four-bit control power amplifier based on diode connection bias and current multiplexing |
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| JP4142004B2 (en) * | 2004-11-29 | 2008-08-27 | シャープ株式会社 | Distortion compensation circuit, power amplifier using the same, and communication device including power amplifier |
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