CN106487344A - A kind of CMOS technology 2400MHz linear power amplifier - Google Patents
A kind of CMOS technology 2400MHz linear power amplifier Download PDFInfo
- Publication number
- CN106487344A CN106487344A CN201610877333.1A CN201610877333A CN106487344A CN 106487344 A CN106487344 A CN 106487344A CN 201610877333 A CN201610877333 A CN 201610877333A CN 106487344 A CN106487344 A CN 106487344A
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- input
- circuit
- pass transistor
- nmos pass
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
Abstract
A kind of CMOS technology 2400MHz linear power amplifier, include the output-stage circuit of the input matching circuit, the input stage circuit of cascode structure and common-source amplifier structure of the T-shaped mating structure of the high pass being sequentially connected in series, wherein, the input of described input matching circuit connects external radio frequency input signal, the outfan of described output-stage circuit connects load, and the input of described input stage circuit and the input of output-stage circuit are respectively connected with a linearisation gate bias circuit with active biased structure.A kind of CMOS technology 2400MHz linear power amplifier of the present invention, by new circuit structure, the CMOS technology using standard is realized, and has the advantages that integrated level height, low cost, is easy to large-scale production.Also overcome the excessively complicated shortcoming of conventional linearizer simultaneously, optimize the output linearity degree of power amplifier using simple structure.
Description
Technical field
The present invention relates to a kind of linear power amplifier.More particularly to a kind of IEEE 802.11 communication frequency band that covers should
CMOS technology 2400MHz linear power amplifier.
Background technology
The quick of the wireless communications market such as mobile phone, wireless phone, radio-frequency (RF) tag (RFID), WLAN (WLAN) sends out
Exhibition, constantly promotes radio frequency front-end transceiver to develop to highly integrated, low-power consumption, compact conformation, cheap direction.More and more
Monolithic radio frequency transmitting-receiving communication system adopt the design of cheap and relative maturity reliable CMOS technology to realize, this requires to get over
Come more communication system submodules ensure high performance must be designed using CMOS technology simultaneously, thus realizing highly
Integrated, with low cost, dependable performance monolithic radio frequency communication system.
Power amplifier (abbreviation power amplifier, english abbreviation PA) is requisite submodule in wireless transmitter, has relatively
High output, is also most parts that consume energy in whole transmitter.For a long time, in business application, for power amplification
The operating frequency of device, bandwidth, load, output, delivery efficiency, the linearity and cost have very high requirement, these parameters
Mutual compromise so that the design of power amplifier have more highly difficult.
Modern communication technology in order to improve the availability of frequency spectrum, the technology of commonly used amplitude modulation and phase modulation simultaneously, have Large Copacity,
The feature of multicarrier, high bandwidth and higher peak-to-average force ratio, these propose very high to the linearity of radio-frequency power amplifier
Require.And the mobility communicating requires the power efficiency of power amplifier high as much as possible.In most cases, power amplifier work
Make in the state of saturation region, transistor itself can produce very big nonlinear characteristic, and the existing method improving the linearity
It is generally focused on back-off and the design of system-level power amplifier, the former understands the output of step-down amplifier thus being greatly lowered
The power efficiency of amplifier, and the latter typically requires complex structure, improves design and production cost.
The problem faced by linear power amplifier being therefore generally speaking currently based on CMOS technology is as follows：
1st, it is greatly lowered using the efficiency that back-off method can make amplifier, thus consuming unnecessary energy；
2nd, there is larger change using system-level linear power amplifier method for designing to Amplifier linearity, but design is multiple
Miscellaneous degree is higher, more using device, is used for base station power amplifier design, in the more difficult application in mobile terminal.
Content of the invention
The technical problem to be solved is to provide one kind and not only can obtain burning voltage, more can obtain
Capacitance compensation, improves the CMOS technology 2400MHz linear power amplifier of linearity of output signal.
The technical solution adopted in the present invention is：A kind of CMOS technology 2400MHz linear power amplifier, includes successively
The input matching circuit of the T-shaped mating structure of high pass, the input stage circuit of cascode structure and the common-source amplifier knot being connected in series
The output-stage circuit of structure, wherein, the input of described input matching circuit connects external radio frequency input signal, described output stage electricity
The outfan on road connects load, and the input of described input stage circuit and the input of output-stage circuit are respectively connected with a tool
There is the linearisation gate bias circuit of active biased structure.
Described input matching circuit includes the first capacitance being in series and the 4th inductance, wherein, described first every
The input of straight electric capacity connects external radio frequency input signal, the outfan of described first capacitance and the input of the 4th inductance
Ground capacity earth is arrived commonly through first in end, and the outfan of described 4th inductance connects the input of input stage circuit.
The linearisation gate bias electricity that the input of the input of described input stage circuit and output-stage circuit connects respectively
Line structure is identical, all includes the first nmos pass transistor and the second nmos pass transistor, wherein, the source of described first nmos pass transistor
Pole is grounded, and grid is connected with drain electrode and is connected DC power supply commonly through first resistor, and described grid and drain electrode are also logical
Cross the grid that second resistance connects the second nmos pass transistor, 3rd resistor and grid are passed through in the drain electrode of described second nmos pass transistor
It is connected and constitutes diode structure, the source electrode of described second nmos pass transistor connects the input of input stage circuit or output-stage circuit
End, provides gate bias voltage.
Described input stage circuit includes the 3rd nmos pass transistor and the 4th nmos pass transistor, wherein, the described 3rd
The source class ground connection of nmos pass transistor, grid connects the second nmos pass transistor source electrode and input in linearisation gate bias circuit respectively
The outfan of the 4th inductance in match circuit, drain electrode connects the source electrode of the 4th nmos pass transistor, described 4th nmos pass transistor
Grid passes through the 3rd drain electrode arrived ground capacity earth and connect the 4th nmos pass transistor by the 4th resistance, described leakage respectively
Pole is also by the first inductance connection DC power supply, and constitutes outfan by the second capacitance connection output-stage circuit
And input.
Described output-stage circuit includes the source ground of the 5th nmos pass transistor, and grid connects the second capacitance respectively
Outfan and linearisation gate bias circuit outfan, drain electrode pass through the second inductance connection DC power supply, described
Drain electrode be also respectively connected with second and arrive ground one end of electric capacity and one end of the 3rd capacitance, the described 4th arrives the another of ground electric capacity
End ground connection, the other end of the 3rd capacitance passes through the 3rd inductance ground connection and composition outfan connects load.
A kind of CMOS technology 2400MHz linear power amplifier of the present invention, by new circuit structure, using standard
CMOS technology is realized, and has the advantages that integrated level height, low cost, is easy to large-scale production.Also overcome conventional linearisation electricity simultaneously
Pass by complicated shortcoming, optimize the output linearity degree of power amplifier using simple structure.Realize with existing CMOS technology
Power amplifier compare, the invention has the advantages that：
1st, pass through to add, in the first order of amplifier and the gate bias of the second level, the CMOS structure being equivalent to diode,
Compensate for variation tendency under different input power for the input capacitance value so that integrated circuit structure simply and has excellent line
Property characteristic, compare more traditional passive biasing and improve the linearity, and simple compared to other linearized fashion structures, save
Chip area.
2nd, pass through in first order circuit using cascode structure, improve the gain ability of first order amplifier, thus
The gain level of integrated circuit is made to increase.
In sum, power amplifier structure proposed by the present invention and implementation have a good application prospect.
Brief description
Fig. 1 is a kind of composition block diagram of CMOS technology 2400MHz linear power amplifier of the present invention；
Fig. 2 is a kind of circuit theory diagrams of CMOS technology 2400MHz linear power amplifier of the present invention.
In figure
1：Input matching circuit 2：Linearisation gate bias circuit
3：Input stage circuit 4：Linearisation gate bias circuit
5：Output-stage circuit
Specific embodiment
With reference to embodiment and accompanying drawing, a kind of CMOS technology 2400MHz linear power amplifier of the present invention is made in detail
Describe in detail bright.
A kind of CMOS technology 2400MHz linear power amplifier of the present invention, is a kind of two-stage for 2400MHz frequency
Under linear power amplifier, be designed using CMOS technology.Output-stage circuit adopts common source level structure, and drain electrode is using electricity
Sense is biased, and constitutes pin network using series capacitance, shunt capacitance, shunt inductance, to defeated while filtering DC component
Go out impedance to be mated；Input stage circuit is attached using cascode structures on transistor, improves the gain of circuit,
The drain electrode of common gate pipe carries out passive biasing using inductance, and forms negative feedback to grid and provide biased electrical by connecting resistance
Pressure, the output simultaneously draining is connected with next polar circuit by bulky capacitor coupled modes；Input stage match circuit adopts high pass T-shaped
Matching network, improves the stability of circuit, specifically includes a capacitance, a filter capacitor by reducing low-frequency gain
The matching network constituting with an inductance；Linearisation gate bias circuit includes an active biased structure and a diode connects
Connect the nmos pass transistor of mode, active biased structure passes through to connect grid and drain electrode keeps the working condition of transistor, by electricity
Resistance feedback reduces the impact to bias voltage of extraneous change and process condition fluctuations, and diode connected mode is by NMOS crystal
The suppression that pipe inversion layer is formed, makes to obtain the input-output characteristic similar to diode between the grid of NMOS tube and source electrode, real
Show the compensation to transistor capacitance change on main road under the conditions of larger input power, improve the linearity of amplifier.
For transistor, Cgs(gate-source capacitance) and gm(mutual conductance) is to cause nonlinear main two factors.So
If only considering Cgs, and ignore the resistance of grid, the input impedance of amplifier can be approximated to be
A is the voltage gain of amplifier, it is known that VgsWith VinRelation
VgsWith VinBecome certain relation, but under large-signal conditions in, ZinIt is not a constant value, so VgsWith
VinFor non-linear relation, this is also to produce nonlinear key factor.Diode linearizer can efficiently solve this
Problem.We form diode using the CMOS transistor being operated in saturation region and connect.Here linearisation gate bias circuit bag
Include the CMOS transistor of an active biased structure and a diode connected mode, active biased structure pass through connect grid and
Drain electrode keeps the working condition of transistor, reduces the extraneous change and process condition fluctuations shadow to bias voltage by resistance feedback
Ring, diode connected mode, by the suppression that CMOS inversion layer is formed, makes to obtain between the grid of CMOS tube and source electrode similar
In diode input-output characteristic it is achieved that on main road under the conditions of to larger input power transistor capacitance change compensation,
Improve the linearity of amplifier.
As shown in figure 1, a kind of CMOS technology 2400MHz linear power amplifier of the present invention, include the company of being sequentially connected in series
The input matching circuit 1 of the T-shaped mating structure of high pass, the input stage circuit 3 of cascode structure and the common-source amplifier structure connecing
Output-stage circuit 5, wherein, the input of described input matching circuit 1 connects external radio frequency input signal RFin, described output stage
The outfan of circuit 5 connects load RL, input each company respectively of the input of described input stage circuit 3 and output-stage circuit 5
Connect a linearisation gate bias circuit 2,4 with active biased structure.
As shown in Figure 2：
Input matching circuit 1 of the present invention includes the first capacitance C1 being in series and the 4th inductance L4, wherein,
The input of described first capacitance C1 connects external radio frequency input signal RFin, the output of described first capacitance C1
Hold and the input of the 4th inductance L4 arrives ground electric capacity C2 ground connection commonly through first, the outfan connection of described 4th inductance L4 is defeated
Enter the input of grade circuit 3.Input matching circuit 1 of the present invention, employs T-type structure, and input connects first every straight
Electric capacity C1, and complete filtering operation to ground electric capacity C2 and the 4th inductance L4 that is in series by first being in parallel, signal passes through the
Four inductance L4 enter input stage circuit.
The linearisation grid that the input of the input of input stage circuit 3 of the present invention and output-stage circuit 5 connects respectively
Pole biasing circuit 2,4 structures are identical, all include the first nmos pass transistor M3/M5 and the second nmos pass transistor M4/M6, wherein,
The source ground of described first nmos pass transistor M3/M5, grid is connected with drain electrode and is connected directly commonly through first resistor R1/R4
Stream power supply, described grid and drain electrode connect the grid of the second nmos pass transistor M4/M6 also by second resistance R2/R5,
The drain electrode of described second nmos pass transistor M4/M6 is connected with grid composition diode structure by 3rd resistor R3/R6, and described the
The source electrode of bi-NMOS transistor M4/M6 connects the input of input stage circuit 3 or output-stage circuit 5, provides gate bias voltage.
As set forth above, it is possible to find out the linearisation gate bias circuit 2,4 of the present invention be by active bias circuit part and
Diode circuit part is constituted.The present invention adopts active bias circuit, regulation first resistor R1/R4 and second resistance R2/R5
Size can obtain the bias voltage of circuit needs, and the maximum advantage of this biasing circuit is exactly that alternating current-direct current is stable.It is specially NMOS
The source ground of transistor, grid is connected with drain electrode and is connected DC power supply by first resistor R1/R4, by the second electricity
Resistance R2/R5 connects external circuit thus reaching the purpose controlling external voltage output.The present invention adopts diode circuit, and second
The grid of nmos pass transistor M4/M6 is connected by 3rd resistor R3/R6 with drain electrode, forms the connected mode of diode.Grid it
Front be connected with active bias circuit by second resistance R2/R5, the source electrode portion of the second nmos pass transistor M4/M6 then with input stage
The grid part of the NMOS tube in circuit 3 or output-stage circuit 5 is connected, and forms gate bias.What the grid capacitance of Ma changed becomes
The trend of the grid total capacitance change of gesture and Mb is with VinChange contrary, so total input capacitance can keep one relatively steady
Fixed constant, and then can effectively improve the gain compression of amplifier.
Input stage circuit 3 of the present invention includes what the 3rd nmos pass transistor M1 and the 4th nmos pass transistor M2 was constituted
Cascode structure, wherein, the source class of the 3rd described nmos pass transistor M1 is grounded, and grid connects linearisation gate bias respectively
The outfan of the 4th inductance L4 in second nmos pass transistor M4 source electrode and input matching circuit 1 in circuit 2, drain electrode connects the 4th
The source electrode of nmos pass transistor M2, the grid of described 4th nmos pass transistor M2 passes through the 3rd respectively and arrives ground electric capacity C6 ground connection and lead to
Cross the drain electrode that the 4th resistance R7 connects the 4th nmos pass transistor M2, constitute negative feedback, improve the exchange stability of integrated circuit,
Described drain electrode connects DC power supply also by the first inductance L1, and constitutes outfan by the second capacitance C3 even
Connect output-stage circuit 5 and input, filter direct current it is ensured that the transmission of AC signal.
Output-stage circuit 5 of the present invention includes the source ground of the 5th nmos pass transistor M7, and grid connects respectively
The outfan of two capacitance C3 and the outfan of linearisation gate bias circuit 4, drain electrode is connected straight by the second inductance L2
Stream power supply, described drain electrode is also respectively connected with second and arrives ground one end of electric capacity C4 and one end of the 3rd capacitance C5, institute
State the 4th other end ground connection arriving ground electric capacity C4, the other end of the 3rd capacitance C5 passes through the 3rd inductance L3 ground connection and constitutes
Outfan connects load RL.
A kind of CMOS technology 2400MHz linear power amplifier of the present invention, radio-frequency input signals RFin enters circuit, leads to
Cross the first capacitance C1, the 4th inductance L4, enter first order amplifying circuit, Jing Guogong from the grid of the 3rd nmos pass transistor M1
After rate is amplified, from the drain electrode output of the 4th nmos pass transistor M2, from the 5th nmos pass transistor M7 after the second capacitance C3
Grid enter second level amplifying circuit after power amplification, from the drain electrode output of the 5th nmos pass transistor M7, by the 3rd
Outfan R is reached after capacitance C5L, complete power amplification.
Claims (5)
1. a kind of CMOS technology 2400MHz linear power amplifier is it is characterised in that include high pass T being sequentially connected in series
The input matching circuit (1) of type mating structure, the input stage circuit (3) of cascode structure and the output of common-source amplifier structure
Level circuit (5), wherein, the input of described input matching circuit (1) connects external radio frequency input signal (RFin), described output
The outfan of level circuit (5) connects load (RL), the input of described input stage circuit (3) and the input of output-stage circuit (5)
End is respectively connected with a linearisation gate bias circuit (2,4) with active biased structure.
2. a kind of CMOS technology 2400MHz linear power amplifier according to claim 1 is it is characterised in that described
Input matching circuit (1) includes the first capacitance (C1) and the 4th inductance (L4) being in series, and wherein, described first every directly electricity
The input holding (C1) connects external radio frequency input signal (RFin), the outfan and the 4th of described first capacitance (C1)
The input of inductance (L4) arrives ground electric capacity (C2) ground connection commonly through first, and the outfan of described 4th inductance (L4) connects input
The input of level circuit (3).
3. a kind of CMOS technology 2400MHz linear power amplifier according to claim 1 is it is characterised in that described defeated
Linearisation gate bias circuit (the 2,4) knot that the input of the input and output-stage circuit (5) that enter a grade circuit (3) connects respectively
Structure is identical, all includes the first nmos pass transistor (M3/M5) and the second nmos pass transistor (M4/M6), wherein, a described NMOS
The source ground of transistor (M3/M5), grid is connected with drain electrode and is connected direct current supply electricity commonly through first resistor (R1/R4)
Source, described grid and drain electrode connect the grid of the second nmos pass transistor (M4/M6) also by second resistance (R2/R5), described
The drain electrode of the second nmos pass transistor (M4/M6) is connected with grid composition diode structure by 3rd resistor (R3/R6), and described the
The source electrode of bi-NMOS transistor (M4/M6) connects the input of input stage circuit (3) or output-stage circuit (5), provides grid inclined
Put voltage.
4. a kind of CMOS technology 2400MHz linear power amplifier according to claim 1 is it is characterised in that described
Input stage circuit (3) includes the 3rd nmos pass transistor (M1) and the 4th nmos pass transistor (M2), wherein, described the 3rd NMOS
The source class ground connection of transistor (M1), grid connects the second nmos pass transistor (M4) source in linearisation gate bias circuit (2) respectively
The outfan of the 4th inductance (L4) in pole and input matching circuit (1), drain electrode connects the source electrode of the 4th nmos pass transistor (M2), institute
The grid stating the 4th nmos pass transistor (M2) passes through the 3rd respectively to ground electric capacity (C6) ground connection and passes through the 4th resistance (R7) even
Connect the drain electrode of the 4th nmos pass transistor (M2), described drain electrode connects DC power supply also by the first inductance (L1), and
Constitute outfan and output-stage circuit (5) and input are connected by the second capacitance (C3).
5. a kind of CMOS technology 2400MHz linear power amplifier according to claim 1 is it is characterised in that described
Output-stage circuit (5) includes the source ground of the 5th nmos pass transistor (M7), and grid connects the second capacitance (C3) respectively
Outfan and the outfan of linearisation gate bias circuit (4), drain electrode connects DC power supply by the second inductance (L2),
Described drain electrode is also respectively connected with one end of second one end arriving ground electric capacity (C4) and the 3rd capacitance (C5), and the described 4th arrives
The other end ground connection on ground electric capacity (C4), the other end of the 3rd capacitance (C5) passes through the 3rd inductance (L3) ground connection and constitutes defeated
Go out end and connect load (RL).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610877333.1A CN106487344A (en) | 2016-10-08 | 2016-10-08 | A kind of CMOS technology 2400MHz linear power amplifier |
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| CN201610877333.1A CN106487344A (en) | 2016-10-08 | 2016-10-08 | A kind of CMOS technology 2400MHz linear power amplifier |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107911086A (en) * | 2017-12-25 | 2018-04-13 | 牛旭 | The radio-frequency power amplifier and radio frequency communication terminal of a kind of high linearity |
| CN108988801A (en) * | 2017-06-02 | 2018-12-11 | 厦门宇臻集成电路科技有限公司 | Predistortion circuit |
| CN110138345A (en) * | 2019-05-15 | 2019-08-16 | 北京无线电测量研究所 | A kind of wideband amplification circuit |
| CN112187190A (en) * | 2020-09-17 | 2021-01-05 | 北京无线电测量研究所 | Broadband amplifying circuit |
| CN112564630A (en) * | 2020-11-09 | 2021-03-26 | 北京无线电测量研究所 | Millimeter wave amplifying circuit |
| CN112910420A (en) * | 2021-01-18 | 2021-06-04 | 温州大学 | High-linearity radio frequency power amplifier |
| US11777454B1 (en) * | 2022-05-16 | 2023-10-03 | Guangdong University Of Technology | Bias circuit for radio frequency power amplifier |
| CN107911086B (en) * | 2017-12-25 | 2024-05-03 | 牛旭 | High-linearity radio frequency power amplifier and radio frequency communication terminal |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108988801A (en) * | 2017-06-02 | 2018-12-11 | 厦门宇臻集成电路科技有限公司 | Predistortion circuit |
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| CN107911086B (en) * | 2017-12-25 | 2024-05-03 | 牛旭 | High-linearity radio frequency power amplifier and radio frequency communication terminal |
| CN110138345A (en) * | 2019-05-15 | 2019-08-16 | 北京无线电测量研究所 | A kind of wideband amplification circuit |
| CN110138345B (en) * | 2019-05-15 | 2022-07-29 | 北京无线电测量研究所 | Broadband amplifying circuit |
| CN112187190A (en) * | 2020-09-17 | 2021-01-05 | 北京无线电测量研究所 | Broadband amplifying circuit |
| CN112564630A (en) * | 2020-11-09 | 2021-03-26 | 北京无线电测量研究所 | Millimeter wave amplifying circuit |
| CN112910420A (en) * | 2021-01-18 | 2021-06-04 | 温州大学 | High-linearity radio frequency power amplifier |
| US11777454B1 (en) * | 2022-05-16 | 2023-10-03 | Guangdong University Of Technology | Bias circuit for radio frequency power amplifier |
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Application publication date: 20170308 |