CN203027200U - Passive mixer - Google Patents
Passive mixer Download PDFInfo
- Publication number
- CN203027200U CN203027200U CN 201220620659 CN201220620659U CN203027200U CN 203027200 U CN203027200 U CN 203027200U CN 201220620659 CN201220620659 CN 201220620659 CN 201220620659 U CN201220620659 U CN 201220620659U CN 203027200 U CN203027200 U CN 203027200U
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- China
- Prior art keywords
- pass transistor
- nmos pass
- biasing resistor
- stage circuit
- voltage
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Abstract
The utility model discloses a passive mixer, which comprises a transconductance level circuit, a switch level circuit connected with the output end of the transconductance level circuit, and a load level circuit connected with the output end of the switch level circuit. The grids and the substrates of four NMOS transistors of the switch level circuit are respectively connected in series with a resistor. According to the technical scheme of the utility model, the linearity of the passive mixer is effectively improved without increasing the current power consumption.
Description
Technical field
The utility model relates to frequency mixer field in the radio frequency integrated circuit design, particularly relates to a kind of switch that improves to the passive frequency mixer of pipeline degree.
Background technology
Frequency mixer is very important module in the radio-frequency transmitter system, and it is connecting radio-frequency front-end, Analog Baseband and local oscillation signal, plays the effect of the radio frequency band signal being moved the low frequency analog baseband signal.
In recent years, passive frequency mixer was because of its higher linearity, noiseproof feature and less DC offset voltage were widely adopted preferably.Fig. 1 is the basic framework of general passive frequency mixer, mainly comprises three parts: transconductance stage circuit, switching stage circuit and load stage circuit.Wherein, transconductance stage circuit is that the radio-frequency voltage signal that will receive converts current signal to; In the switching stage circuit, the two pairs of switches are switch current fast under the effect of 50% local oscillator square-wave signal in duty ratio to pipe (nmos pass transistor M1 and M2, nmos pass transistor M3 and M4), realize frequency translation; The load stage circuit converts current signal to voltage signal output by a trans-impedance amplifier TIA, and realizes preliminary first-order filtering effect.
Described transconductance stage circuit, switching stage circuit and load stage the circuit deterioration of the linearity separately all can affect its linearity of mixing, and the general solution of the linearity that improves transconductance stage circuit and load stage circuit all can increase power consumption.The switching stage circuit is equivalent to a switch with conducting resistance, the size of conducting resistance can change along with the variation of source and drain terminal AC signal, and the linearity that improves this conducting resistance can improve the linearity of integrated circuit under the prerequisite that does not increase power consumption.
In a lot of radio frequency receptions were sent out the machine system, very high to the linearity index request of frequency mixer, under the prerequisite that is not increasing existing power consumption, can start with to pipe from the switch of switching stage circuit was optimized.
The utility model content
The technical problems to be solved in the utility model is to provide a kind of passive frequency mixer, under the prerequisite that does not increase existing power consumption, can effectively improve the linearity of passive frequency mixer.
For solving the problems of the technologies described above, passive frequency mixer of the present utility model comprises: transconductance stage circuit, the switching stage circuit that is connected with the output of this transconductance stage circuit, the load stage circuit that is connected with the output of this switching stage circuit; Wherein:
Described switching stage circuit, by the first nmos pass transistor～the 4th nmos pass transistor, the 3rd biasing resistor～the tenth biasing resistor forms;
The source electrode of the first nmos pass transistor and the second nmos pass transistor is connected with an output of described transconductance stage circuit, and the source electrode of the 3rd nmos pass transistor and the 4th nmos pass transistor is connected with another output of described transconductance stage circuit;
The grid of the first nmos pass transistor is connected with an end of the 7th biasing resistor, the grid of the 4th nmos pass transistor is connected with an end of the tenth biasing resistor, the other end of the 7th biasing resistor is connected with the other end of the tenth biasing resistor, dc offset voltage and the local oscillation signal of the node input grid of its connection;
The grid of the second nmos pass transistor is connected with an end of the 8th biasing resistor, the grid of the 3rd nmos pass transistor is connected with an end of the 9th biasing resistor, the other end of the 8th biasing resistor is connected with the other end of the 9th biasing resistor, dc offset voltage and the local oscillation signal of the node input grid of its connection;
The substrate of the first nmos pass transistor is connected with an end of the 3rd biasing resistor, the substrate of the second nmos pass transistor is connected with an end of the 4th biasing resistor, the other end of the 3rd biasing resistor is connected with the other end of the 4th biasing resistor, the node input underlayer voltage of its connection;
The substrate of the 3rd nmos pass transistor is connected with an end of the 5th biasing resistor, the substrate of the 4th nmos pass transistor is connected with an end of the 6th biasing resistor, the other end of the 5th biasing resistor is connected with the other end of the 6th biasing resistor, the node input underlayer voltage of its connection;
The drain electrode of the first nmos pass transistor is connected with the drain electrode of the 3rd nmos pass transistor and the positive input terminal of described load stage circuit; The drain electrode of the 2nd NMOS pipe is connected with the drain electrode of the 4th nmos pass transistor and the negative input end of described load stage circuit.
The utility model to the grid end of pipe and the substrate biasing resistor of connecting respectively, suppresses the variation of conducting resistance at the switch of switching stage circuit under 0.18 μ m CMOS technique; Not damaging other performance index and not increasing under the prerequisite of overall power, can effectively improve the linearity of frequency mixer like this.
The utility model can be applied to frequency mixer is had in the radio-frequency transceiver system of higher line degree requirement.
Description of drawings
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail:
Fig. 1 is existing passive frequency mixer schematic diagram;
Fig. 2 is improved switching tube circuit theory schematic diagram;
Fig. 3 is passive frequency mixer one embodiment schematic diagram of the present utility model.
Embodiment
Shown in Figure 3, in the following embodiments, passive frequency mixer described in the utility model is down-conversion mixer, comprising: a transconductance stage circuit, a switching stage circuit, a load stage circuit.
Described transconductance stage circuit Gm is comprised of a trsanscondutance amplifier and a common mode negative-feedback circuit.The common mode negative-feedback circuit is by the common-mode voltage of the output of resistance detection trsanscondutance amplifier, this common-mode voltage and a reference voltage are compared rear amplification output by comparator, output voltage feeds back to the grid of the tail current pipe of trsanscondutance amplifier, thereby make the common-mode voltage of trsanscondutance amplifier output equal reference voltage level, reach the purpose of stablizing the transconductance stage circuit common-mode voltage.This common-mode voltage is also the common-mode voltage of whole frequency mixer.The radio-frequency voltage signal V of transconductance stage circuit Gm input difference
RFin, the current signal of output difference.
Trsanscondutance amplifier can be common-source amplifier, can be also the amplifier that PMOS and NMOS current multiplexing are recommended export structure.
Described switching stage circuit, by the first nmos pass transistor M1, the second nmos pass transistor M2, the 3rd nmos pass transistor M3 and the 4th nmos pass transistor M4, biasing resistor R3～R10 forms.
The source electrode of the first nmos pass transistor M1 and the second nmos pass transistor M2 is connected with the output of described transconductance stage circuit Gm, and the source electrode of the 3rd nmos pass transistor M3 and the 4th nmos pass transistor M4 is connected with another output of described transconductance stage circuit Gm.
The grid of the first nmos pass transistor M1 is connected with the end of biasing resistor R7, the grid of the 4th nmos pass transistor M4 is connected with the end of biasing resistor R10, the other end of biasing resistor R7 is connected with the other end of biasing resistor R10, the bias voltage V of the node input grid of its connection
GAnd local oscillation signal V
LO
The grid of the second nmos pass transistor M2 is connected with the end of biasing resistor R8, the grid of the 3rd nmos pass transistor M3 is connected with the end of biasing resistor R9, the other end of biasing resistor R8 is connected with the other end of biasing resistor R9, the bias voltage V of the node input grid of its connection
GAnd local oscillation signal V
LO
Local oscillation signal V
LOFor the differential square signals of the full swing of duty ratio 50%, together with dc offset voltage V
GBe added to the switching tube (grid of nmos pass transistor M1～M4).
The substrate of the first nmos pass transistor M1 is connected with the end of biasing resistor R3, the substrate of the second nmos pass transistor M2 is connected with the end of biasing resistor R4, the other end of biasing resistor R3 is connected with the other end of biasing resistor R4, the node input underlayer voltage V of its connection
B
The 3rd nmos pass transistor M3 substrate is connected with the end of biasing resistor R5, the substrate of the 4th nmos pass transistor M4 is connected with the end of biasing resistor R6, the other end of biasing resistor R5 is connected with the other end of biasing resistor R6, the node input underlayer voltage V of its connection
B
The drain electrode of the first nmos pass transistor M1 is connected with the drain electrode of the 3rd NMOS pipe M3; The drain electrode of the 2nd NMOS pipe M2 is connected with the drain electrode of the 4th NMOS pipe M4.
Described load stage circuit adopts single order RC low-pass filter network, is made of a trans-impedance amplifier TIA with the fully differential of passive feedback network.
In the positive input terminal of trans-impedance amplifier TIA and described switching stage circuit, the drain electrode of the drain electrode of the first nmos pass transistor M1 and the 3rd NMOS pipe M3 is connected; In negative input end and described switching stage circuit, the drain electrode of the drain electrode of the 2nd NMOS pipe M2 and the 4th NMOS pipe M4 is connected.
One end of the first resistance R 1 and the first capacitor C 1 is connected with the positive input terminal of trans-impedance amplifier TIA, and the other end is connected with the negative output terminal Vout-of trans-impedance amplifier TIA.One end of the second resistance R 2 and the second capacitor C 2 is connected with the negative input end of trans-impedance amplifier TIA, and the other end is connected with the positive output end Vout+ of trans-impedance amplifier TIA.
Transconductance stage circuit is with the radio-frequency voltage signal V of the difference that receives
RFinConvert current signal to, the switching stage circuit is realized frequency translation by quick switch current signal, exports after the current signal of load stage circuit after with frequency translation converts the baseband voltage signal to, and has carried out preliminary filtering.
Non-linear the non-linear of mutual conductance that be mainly derived from of transconductance stage circuit.Experience shows, the overdrive voltage that suitably improves each mutual conductance pipe can be optimized the linearity of mutual conductance, but under certain gain requires, can cause the increase of power consumption.The load stage circuit adopts the trans-impedance amplifier with the passive feedback device, and its linearity generally can reach application requirements.
In the switching stage circuit, switching tube is under the effect in AC signal, and its conducting resistance can change to some extent, thereby causes certain linear distortion.The utility model has carried out the optimization of the linearity for switching tube.At the grid of four switching tubes and the substrate resistance (R that connects respectively
GAnd R
B, referring to Fig. 2), with parasitic capacitance C
GSAnd C
SB(in conjunction with shown in Figure 2) forms respectively the high path of AC signal, suppresses gate source voltage V
GSWith source lining voltage V
SBRelative variation, thereby suppress the variation of conducting resistance, thereby improved the linearity of switching tube.
Passive frequency mixer on signal path without DC current gain, switching tube is operated in dark linear zone, be equivalent to a switch with very little conducting resistance, the dc offset voltage of its grid is arranged so that switching tube is in the magnitude of voltage of opening critical condition, and the resistance value of switching tube in the half period of conducting fully is:
Wherein, u
nElectron mobility, C
oxBe unit are grid oxygen capacitance size, (W/L) be the breadth length ratio of metal-oxide-semiconductor, V
GS-V
THIt is overdrive voltage.
Switching tube conduction period, grid voltage is constant, yet source voltage terminal has certain fluctuation under the effect of AC signal, make V
GSFluctuation is to a certain degree also arranged, thereby affect the linearity of conducting resistance.As shown in Figure 2, relatively stable in order to make these two voltages keep, add a resistance R at grid
G, it and parasitic capacitance C
GSForm a high path, make grid voltage fluctuate along with the fluctuation of source voltage, thereby make V
GSMagnitude of voltage relatively constant.As a same reason, the size of threshold voltage is relevant with the body bias effect that underlayer voltage causes:
Wherein, V
TH0Be the voltage of interface electron concentration when equaling p-type substrate majority carrier density, γ is body-effect coefficient, Φ
fA constant relevant with substrate concentration, V
SBBe source lining voltage.V
SBFluctuation can cause the fluctuation of threshold voltage equally.Resistance in the substrate series connection, and parasitic capacitance C
GBForm high path, make V
SBMake relatively constant, thereby make threshold voltage relatively constant.
In order to make switching tube more near perfect condition, the size of general switching tube can strengthen, thereby reduces conducting resistance, also can reduce gain loss simultaneously.If but the size of switching tube is excessive, need stronger local oscillation signal to drive, so the size of switching tube can not unlimited increase.Parasitic capacitance serious decay can not occur generally in " fF " magnitude in order to make high path, and the resistance of series connection is done suitable adjustment according to radio frequency signal frequency.
Owing to there is no DC current gain, so the common-mode voltage of each switching tube is identical, be all V in passive frequency mixer
CM, the dc offset voltage that is added in the switching tube grid makes switching tube be in the critical edges of conducting, is V
G=V
CM+ V
TH=V
S+ V
TH, this voltage can adopt a voltage translation circuit, at V
CMUpper translation V
THThe voltage of size.Underlayer voltage V
BCan suitably improve, higher than V
CM, can reduce the threshold voltage size like this, reduce to a certain extent conducting resistance, thereby can weaken switching tube to the ratio of non-linear effects.
Although the utility model utilizes specific embodiment to describe, the explanation of embodiment is not limited scope of the present utility model.The one skilled in the art, easily carries out various modifications or can make up embodiment in the situation that do not deviate from spirit and scope of the present utility model by with reference to explanation of the present utility model.
Claims (4)
1. a passive frequency mixer, comprising: transconductance stage circuit, the switching stage circuit that is connected with the output of this transconductance stage circuit, the load stage circuit that is connected with the output of this switching stage circuit; It is characterized in that:
Described switching stage circuit, by the first nmos pass transistor～the 4th nmos pass transistor, the 3rd biasing resistor～the tenth biasing resistor forms;
The source electrode of the first nmos pass transistor and the second nmos pass transistor is connected with an output of described transconductance stage circuit, and the source electrode of the 3rd nmos pass transistor and the 4th nmos pass transistor is connected with another output of described transconductance stage circuit;
The grid of the first nmos pass transistor is connected with an end of the 7th biasing resistor, the grid of the 4th nmos pass transistor is connected with an end of the tenth biasing resistor, the other end of the 7th biasing resistor is connected with the other end of the tenth biasing resistor, dc offset voltage and the local oscillation signal of the node input grid of its connection;
The grid of the second nmos pass transistor is connected with an end of the 8th biasing resistor, the grid of the 3rd nmos pass transistor is connected with an end of the 9th biasing resistor, the other end of the 8th biasing resistor is connected with the other end of the 9th biasing resistor, dc offset voltage and the local oscillation signal of the node input grid of its connection;
The substrate of the first nmos pass transistor is connected with an end of the 3rd biasing resistor, the substrate of the second nmos pass transistor is connected with an end of the 4th biasing resistor, the other end of the 3rd biasing resistor is connected with the other end of the 4th biasing resistor, the node input underlayer voltage of its connection;
The substrate of the 3rd nmos pass transistor is connected with an end of the 5th biasing resistor, the substrate of the 4th nmos pass transistor is connected with an end of the 6th biasing resistor, the other end of the 5th biasing resistor is connected with the other end of the 6th biasing resistor, the node input underlayer voltage of its connection;
The drain electrode of the first nmos pass transistor is connected with the drain electrode of the 3rd nmos pass transistor and the positive input terminal of described load stage circuit; The drain electrode of the 2nd NMOS pipe is connected with the drain electrode of the 4th nmos pass transistor and the negative input end of described load stage circuit.
2. passive frequency mixer as claimed in claim 1, it is characterized in that: described transconductance stage circuit is comprised of a trsanscondutance amplifier and a common mode negative-feedback circuit;
The common mode negative-feedback circuit amplifies more afterwards output with this common-mode voltage and a reference voltage by a comparator, and feeds back to the grid of the tail current pipe of trsanscondutance amplifier by the common-mode voltage of resistance detection trsanscondutance amplifier output;
The radio-frequency voltage signal of transconductance stage circuit input difference, the current signal of output difference.
3. passive frequency mixer as claimed in claim 2, it is characterized in that: described trsanscondutance amplifier can be common-source amplifier, can be also the amplifier that PMOS transistor and nmos pass transistor current multiplexing are recommended export structure.
4. passive frequency mixer as claimed in claim 1, it is characterized in that: described load stage circuit is made of a trans-impedance amplifier with the fully differential of passive feedback network;
In the positive input terminal of trans-impedance amplifier and described switching stage circuit, the drain electrode of the first nmos pass transistor and the drain electrode of the 3rd nmos pass transistor are connected; In negative input end and described switching stage circuit, the drain electrode of the second nmos pass transistor and the drain electrode of the 4th nmos pass transistor are connected; One end of the first resistance and the first electric capacity is connected with the positive input terminal of trans-impedance amplifier, and the other end is connected with the negative output terminal of trans-impedance amplifier; One end of the second resistance and the second electric capacity is connected with the negative input end of trans-impedance amplifier, and the other end is connected with the positive output end of trans-impedance amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220620659 CN203027200U (en) | 2012-11-21 | 2012-11-21 | Passive mixer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220620659 CN203027200U (en) | 2012-11-21 | 2012-11-21 | Passive mixer |
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| Publication Number | Publication Date |
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| CN203027200U true CN203027200U (en) | 2013-06-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220620659 Expired - Lifetime CN203027200U (en) | 2012-11-21 | 2012-11-21 | Passive mixer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104158496A (en) * | 2014-08-15 | 2014-11-19 | 东南大学 | Passive frequency mixer at duty ratio of 25% with positive feedback transimpedance amplification stage as load |
| CN104518736A (en) * | 2014-12-15 | 2015-04-15 | 北京爱洁隆技术有限公司 | S-band high-linearity, low-noise and low-gain down-conversion active mixer |
| CN105450179A (en) * | 2014-09-19 | 2016-03-30 | 意法半导体有限公司 | Electronic device for a radiofrequency signal reception chain, comprising a low-noise transimpedance amplifier stage |
| CN105553492A (en) * | 2015-12-14 | 2016-05-04 | 东南大学 | Low power supply voltage double-conversion RF receiving front end |
-
2012
- 2012-11-21 CN CN 201220620659 patent/CN203027200U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104158496A (en) * | 2014-08-15 | 2014-11-19 | 东南大学 | Passive frequency mixer at duty ratio of 25% with positive feedback transimpedance amplification stage as load |
| CN104158496B (en) * | 2014-08-15 | 2017-02-15 | 东南大学 | Passive frequency mixer at duty ratio of 25% with positive feedback transimpedance amplification stage as load |
| CN105450179A (en) * | 2014-09-19 | 2016-03-30 | 意法半导体有限公司 | Electronic device for a radiofrequency signal reception chain, comprising a low-noise transimpedance amplifier stage |
| CN105450179B (en) * | 2014-09-19 | 2018-06-26 | 意法半导体有限公司 | The electronic equipment for rf signal reception chain including low noise trans-impedance amplifier grade |
| CN104518736A (en) * | 2014-12-15 | 2015-04-15 | 北京爱洁隆技术有限公司 | S-band high-linearity, low-noise and low-gain down-conversion active mixer |
| CN105553492A (en) * | 2015-12-14 | 2016-05-04 | 东南大学 | Low power supply voltage double-conversion RF receiving front end |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130626 |