CN103219952A - Broadband low noise amplifier adopting noise cancellation technology - Google Patents
Broadband low noise amplifier adopting noise cancellation technology Download PDFInfo
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- CN103219952A CN103219952A CN2013100955431A CN201310095543A CN103219952A CN 103219952 A CN103219952 A CN 103219952A CN 2013100955431 A CN2013100955431 A CN 2013100955431A CN 201310095543 A CN201310095543 A CN 201310095543A CN 103219952 A CN103219952 A CN 103219952A
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Abstract
The invention provides a broadband low noise amplifier adopting a noise cancellation technology. The amplifier is characterized by comprising a balanced-unbalanced transformer (1), a capacitance cross coupling common-gate amplification stage (2), a feedforward noise cancellation stage (3), wherein the two balance output terminals of the balanced-unbalanced transformer (1) are directly coupled with the input terminal of the capacitance cross coupling common-gate amplification stage (2) and connected with the gate terminal of the feedforward noise cancellation stage (3) in a capacitance coupling mode; and the drain terminal of the feedforward noise cancellation stage (3) is connected with the drain terminal of the capacitance cross coupling common-gate amplification stage (2). The feedforward noise cancellation stage also serves as a transistor load and shares direct current with the capacitance cross coupling common-gate amplification stage, so that the power consumption is lowered; and moreover, the feedforward noise cancellation stage provides an additional noise cancellation path, so that the noise contribution of a common-gate tube can be reduced. The feedforward noise cancellation stage which shares the direct current is adopted in the amplifier, so that the low noise factor and low power consumption are realized.
Description
Technical field
The present invention relates to a kind of wideband low noise amplifier that adopts noise cancellation technique, have the low-noise factor low in power consumption, belong to technical field of radio frequency integrated circuits.
Background technology
Low noise amplifier is the key modules of receiver in the wireless transmitting system, and it generally links to each other with antenna, amplifies the small-signal that receives, and reduces the deterioration to signal as far as possible.Port match, gain, noise factor, the power consumption and the linearity are the important technological parameters of low noise amplifier.
Traditional low noise amplifier adopts source class inductive feedback technology, can provide arrowband input coupling and lower noise factor, but this structure needs on-chip inductor, and is not suitable for broadband system.Adopt the low noise amplifier of noise cancellation technique can realize lower noise factor, but power consumption is bigger in the broadband.Adopt the low noise amplifier of common gate structure to have the characteristic of broadband input coupling and lower power consumption, but noise factor is bigger.
Fig. 1 has adopted differential capacitance cross-couplings technology for the common gate structure low noise amplifier after improving.Improved common gate structure low noise amplifier is made up of the common grid amplifying stage 2 and the load stage 4 of balance/unbalance transformer 1, capacitive cross coupling.Balance/unbalance transformer 1 is converted into single-ended signal differential signal and provides the source class direct current biasing for NM1 and NM2.The common grid amplifying stage 2 of capacitive cross coupling is by grid amplifier tube NM1 and NM2 form altogether, cross-linked capacitor C 1 is coupled to relative transistorized grid with C2 with differential input signal, make that signal voltage doubles between the grid source that is total to grid amplifier tube NM1 and NM2, thereby increase the equivalent transconductance of grid amplifier tube altogether, reduced noise factor and power consumption.Load stage 4 is by electric capacity, resistance, one or more compositions in the passive devices such as inductance.Only consider the noise contribution of grid amplifier tube altogether, under the hypothesis that input impedance and source impedance are mated fully, the noise factor of this circuit is:
F=1+γ/2 (1)
For long channel transistor, raceway groove thermal noise coefficient gamma approximates 2/3, and noise factor is lower; And for short-channel transistor, γ can be big a lot, can make the noise factor of cathode-input amplifier increase greatly.In order further to reduce the noise factor of cathode-input amplifier, can adopt noise cancellation technique, but the noise cancellation circuit of introducing meeting additive decrementation electric current causes the power consumption of integrated circuit to increase.
Summary of the invention
The technology of the present invention is dealt with problems: overcome the deficiencies in the prior art, a kind of wideband low noise amplifier that adopts noise cancellation technique is provided, be total on the basis of grid low noise amplifier in the capacitive cross coupling, introduce extra feed-forward noise and offset the path, further offset at difference output end and be total to the noise that the grid amplifier tube causes.
The invention provides following technical scheme: a kind of wideband low noise amplifier that adopts noise cancellation technique comprises common grid amplifying stage (2) and feed-forward noise cancellation stage (3) that balance/unbalance transformer (1), capacitive cross are coupled.
The input of the common grid amplifying stage (2) of two balance outputs of balance/unbalance transformer (1) and capacitive cross coupling directly is coupled, can provide the source class biasing for NM1 and NM2, need not source class resistance, inductance or transistor are done the source class biasing, have avoided the noise contribution of these bias devices.
As importing amplifier tube, the two ends of capacitor C 1 connect the source class of NM1 and the grid of NM2 respectively to the common grid amplifying stage (2) of capacitive cross coupling with two identical N transistor npn npn NM1 and NM2, and the two ends of capacitor C 2 connect the source class of NM2 and the grid of NM1 respectively;
Feed-forward noise cancellation stage (3) is made up of two identical P transistor npn npn PM1 and PM2, and the source class of PM1 and PM2 is received power supply, and the drain electrode of PM1 links to each other with the drain electrode of NM1, and the drain electrode of PM2 links to each other with the drain electrode of NM2.Feed-forward noise cancellation stage (3) is stacked on the common grid amplifying stage (2) of capacitive cross coupling, not the additive decrementation electric current.
Two balance outputs of balance/unbalance transformer (1) are connected by capacitive coupling with the grid end of feed-forward noise cancellation stage (3) simultaneously, the two ends of C4 are received the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 are received the source class of NM2 and the grid of PM1 respectively.
The present invention's advantage compared with prior art is:
(1) feed-forward noise cancellation stage of the present invention can reduce common grid amplifier tube NM1 and the NM2 noise contribution at difference output end Vo for the common grid amplifying stage of capacitive cross coupling provides extra noise cancellation path;
(2) feed-forward noise cancellation stage of the present invention is stacked on the common grid amplifying stage of capacitive cross coupling, and PM1 and PM2 be simultaneously as load transistor, feed-forward noise cancellation stage and cross-linked grid amplifying stage common DC electric current altogether, the power consumption that reduced power consumption;
(3) feed-forward noise cancellation stage of the present invention realizes with P transistor npn npn PM1 and PM2, be stacked on the N transistor npn npn NM1 and NM2 of common grid amplifying stage (2) of capacitive cross coupling, the drain electrode of PM1 and the drain electrode of NM1 are joined, the drain electrode of PM2 and the drain electrode of NM2 are joined, such connected mode required voltage nargin is less, can adopt low voltage power supply, reduce power consumption;
(4) feed-forward noise cancellation stage of the present invention realizes that with P transistor npn npn PM1 and PM2 the impedance of output is transistorized drain terminal impedance parallel connection, and high output impedance helps to realize higher gain.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention, the accompanying drawing of required use is done to introduce simply in will describing embodiment below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the cross-linked grid low noise amplifier altogether of available technology adopting differential capacitance;
Fig. 2 is the wideband low noise amplifier structural representation of employing noise cancellation technique provided by the invention;
Fig. 3 is the schematic diagram that the balance/unbalance transformer is offset noise;
Fig. 4 is the schematic diagram that noise is offset in the capacitive cross coupling;
Fig. 5 is the schematic diagram that the feed-forward noise cancellation stage is offset noise.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
The specific embodiment of the present invention provides a kind of wideband low noise amplifier that adopts noise cancellation technique, as shown in Figure 2, comprises the common grid amplifying stage (2) and the feed-forward noise cancellation stage 3 of balance/unbalance transformer 1, capacitive cross coupling.
The single-ended input 1 of balance/unbalance transformer 1 is connected to signal source, the 4th end and the 5th end ground connection, balance output 2 and 3 is directly coupled to the input transistors NM1 of common grid amplifying stage 2 and the source class of NM2 respectively, can provide the source class biasing for NM1 and NM2, need not source class resistance, inductance or transistor are done the source class biasing, have avoided the noise contribution of these bias devices.
Two identical N transistor npn npn NM1 of common grid amplifying stage 2 usefulness of capacitive cross coupling and NM2 are as the input amplifier tube, and the two ends of capacitor C 1 connect the source class of NM1 and the grid of NM2 respectively, and the two ends of capacitor C 2 connect the source class of NM2 and the grid of NM1 respectively;
Feed-forward noise cancellation stage 3 is made up of two identical P transistor npn npn PM1 and PM2, and the source class of PM1 and PM2 is received power supply, and the drain electrode of PM1 links to each other with the drain electrode of NM1, and the drain electrode of PM2 links to each other with the drain electrode of NM2.Feed-forward noise cancellation stage 3 is stacked on the common grid amplifying stage 2 of capacitive cross coupling, not the additive decrementation electric current.
Two balance outputs of balance/unbalance transformer 1 are connected by capacitive coupling with the grid end of feed-forward noise cancellation stage 3 simultaneously, and the two ends of C4 are received the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 are received the source class of NM2 and the grid of PM1 respectively.
The main noise source of cathode-input amplifier is the raceway groove thermal noise of common grid amplifier transistor, can equivalence be a noise current that flows to source class from transistor drain.Raceway groove thermal noise with NM1 is an example, and noise current flows to source class from the drain electrode of NM1, and the noise voltage at a positive of source class generation produces an anti-phase noise voltage in drain electrode.Except balance/unbalance transformer and two noise cancellation paths of capacitive cross coupling, the present invention has designed extra noise forward path, drain terminal at NM2 produces relevant anti-phase noise voltage, thereby difference output end Vo can offset most NM1 noise contribution.
Three noise cancellation paths that the present invention adopts, its principle is as follows:
1, balance/unbalance transformer
The principle of balance/unbalance transformer counteracting noise as shown in Figure 3.The source class noise voltage of transistor NM1 can be coupled to the source class of transistor NM2, because the intercoupling effect of desirable balance balun transformer, the noise voltage of the source class generation of NM2 is identical with the noise voltage amplitude of NM1 source class and phase place is opposite.The source class noise voltage of NM2 is amplified to the drain terminal of NM2 through the common grid of NM2, and NM2 leaks the noise voltage and the noise voltage homophase of NM2 source class of level, also the noise voltage homophase that drains with NM1.Difference output end can be offset the common-mode noise of a part like this, has reduced the noise factor of circuit.
2, capacitive cross coupling
The principle of capacitive cross coupled structure counteracting noise as shown in Figure 4.The source class noise voltage of transistor NM1 is coupled to the grid of NM2 by capacitor C 1, and NM2 grid noise voltage is identical with NM1 source class noise voltage amplitude same phase.NM2 grid noise voltage is amplified to the drain electrode of NM2 by the common source of NM2, and the drain electrode noise voltage of NM2 and NM2 grid noise voltage inversion are with NM1 drain electrode noise voltage homophase.Therefore, difference output end can be offset the common-mode noise of a part, has reduced the noise factor of circuit.
3, feed-forward noise cancellation stage
The principle of feed-forward noise cancellation stage counteracting noise as shown in Figure 5.The source class noise voltage of transistor NM1 is coupled to the grid of PM2 by capacitor C 4, and PM2 grid noise voltage is identical with NM1 source class noise voltage amplitude same phase.PM2 grid noise voltage is amplified to the drain electrode (being the drain electrode of NM2) of PM2 by the common source of PM2, and the drain electrode noise voltage of NM2 and PM2 grid noise voltage inversion are with NM1 drain electrode noise voltage homophase.Therefore, difference output end can be offset the common-mode noise of a part, has reduced the noise factor of circuit.
Under the effect in above-mentioned three noise cancellation paths, produced the noise voltage of the leakage level homophase of one and NM1 in the drain electrode of NM2.Extra noise cancellation path makes difference output end can offset the more noise of multiple transistor NM1.Because the symmetry of fully differential circuit, difference output end can be offset the noise of more transistor NM2 equally.
The present invention makes that by the design in additional noise counteracting path the noise of grid amplifier tube obtains most counteracting at difference output end altogether, has reduced the noise factor of circuit.
The technical scheme that adopts this embodiment to provide, can realize following technique effect:
1, feed-forward noise cancellation stage of the present invention can reduce common grid amplifier tube NM1 and NM2 in the noise contribution of difference output end Vo for the common grid amplifying stage of capacitive cross coupling provides extra noise cancellation path, has realized low-noise factor;
2, feed-forward noise cancellation stage of the present invention is stacked on the common grid amplifying stage of capacitive cross coupling, and PM1 and PM2 are simultaneously as load transistor, and feed-forward noise cancellation stage and cross-linked grid amplifying stage common DC electric current have altogether been realized low-power consumption;
3, feed-forward noise cancellation stage of the present invention realizes with P transistor npn npn PM1 and PM2, be stacked on the common grid amplifying stage NM1 and NM2 of capacitive cross coupling, the drain electrode of PM1 and the drain electrode of NM1 are joined, the drain electrode of PM2 and the drain electrode of NM2 are joined, such connected mode required voltage nargin is less, can adopt low voltage power supply, reduce power consumption.
4, feed-forward noise cancellation stage of the present invention realizes that with P transistor npn npn PM1 and PM2 the impedance of output is transistorized drain terminal impedance parallel connection, and the output impedance of drain terminal is higher, helps to realize high-gain;
The invention provides a kind of wideband low noise amplifier that adopts noise cancellation technique.The present invention is stacked in capacitive coupling with the feed-forward noise cancellation stage and is total on the grid amplifying stage, and the common DC electric current has reduced power consumption; The feed-forward noise cancellation stage provides extra noise cancellation path, has reduced the noise contribution of common grid amplifier tube.
The non-elaborated part of the present invention belongs to techniques well known.
The above; only be the preferable embodiment of the present invention; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the embodiment of the invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (1)
1. a wideband low noise amplifier that adopts noise cancellation technique is characterized in that comprising: the common grid amplifying stage (2) and the feed-forward noise cancellation stage (3) of balance/unbalance transformer (1), capacitive cross coupling; The input of the common grid amplifying stage (2) of two balance outputs of balance/unbalance transformer (1) and capacitive cross coupling directly is coupled, be connected by capacitive coupling with the grid end of feed-forward noise cancellation stage (3) simultaneously, the drain terminal of feed-forward noise cancellation stage (3) is connected to the drain terminal of the common grid amplifying stage (2) of capacitive cross coupling;
The first single-ended input of balance/unbalance transformer (1) is connected to signal source, and balance output 2 and 3 is directly coupled to the input transistors NM1 of common grid amplifying stage (2) and the source class of NM2 respectively, the 4th end and the 5th end ground connection;
The common grid amplifying stage (2) of capacitive cross coupling with two identical N transistor npn npn NM1 and NM2 as importing amplifier tube, the grid end of NM1 and NM2 is received bias voltage vb1 by big resistance R 1 and R2 respectively, the grid of another termination of source class NM2 of one termination NM1 of capacitor C 1, the grid of another termination of source class NM1 of a termination NM2 of capacitor C 2;
Feed-forward noise cancellation stage (3) is made up of two identical P transistor npn npn PM1 and PM2, the source class of PM1 and PM2 is received power supply, the drain electrode of PM1 links to each other with the drain electrode of NM1, and the drain electrode of PM2 links to each other with the drain electrode of NM2, and the grid of PM1 and PM2 is received bias voltage vb2 by big resistance R 3 and R4 respectively;
The common grid amplifying stage (2) of capacitive cross coupling and feed-forward noise cancellation stage (3) are by capacitive coupling, and the two ends of C4 are received the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 are received the source class of NM2 and the grid of PM1 respectively.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103633947A (en) * | 2013-12-03 | 2014-03-12 | 天津大学 | Noninductive and high-gain CMOS (Complementary Metal Oxide Semiconductor) broadband low-noise amplifier |
| CN103746660A (en) * | 2013-12-23 | 2014-04-23 | 中国电子科技集团公司第三十八研究所 | Broadband CMOS (Complementary Metal-Oxide-Semiconductor Transistor) balun low noise amplifier |
| CN104270100A (en) * | 2014-08-28 | 2015-01-07 | 中国科学技术大学 | Low-power low-noise amplifier utilizing positive feedback technique and active transconductance enhancement technique |
| CN107148749A (en) * | 2014-10-29 | 2017-09-08 | 高通股份有限公司 | Transformer feedback amplifier |
| CN107276547A (en) * | 2017-06-06 | 2017-10-20 | 江苏微远芯微系统技术有限公司 | A kind of single chip integrated millimeter wave switch-mode power amplifier circuit |
| CN111510108A (en) * | 2020-05-13 | 2020-08-07 | 电子科技大学 | Quasi-circulator with broadband, low noise and high power tolerance |
| CN114513176A (en) * | 2021-12-30 | 2022-05-17 | 电子科技大学 | Capacitive cross-coupling transconductance-enhanced low-noise amplifier based on cascode structure |
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| CN101951230A (en) * | 2010-09-03 | 2011-01-19 | 华东师范大学 | Broadband low noise amplifier |
| KR101105379B1 (en) * | 2010-08-17 | 2012-01-16 | 한국과학기술원 | Low noise amplifier and radio receiver |
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| CN101110573A (en) * | 2007-06-28 | 2008-01-23 | 复旦大学 | Ultra-broadband low-noise amplifier circuit adopting noise cancellation technology |
| KR101105379B1 (en) * | 2010-08-17 | 2012-01-16 | 한국과학기술원 | Low noise amplifier and radio receiver |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633947A (en) * | 2013-12-03 | 2014-03-12 | 天津大学 | Noninductive and high-gain CMOS (Complementary Metal Oxide Semiconductor) broadband low-noise amplifier |
| CN103746660B (en) * | 2013-12-23 | 2017-04-05 | 中国电子科技集团公司第三十八研究所 | A kind of broadband CMOS balun low-noise amplifiers |
| CN103746660A (en) * | 2013-12-23 | 2014-04-23 | 中国电子科技集团公司第三十八研究所 | Broadband CMOS (Complementary Metal-Oxide-Semiconductor Transistor) balun low noise amplifier |
| CN104270100B (en) * | 2014-08-28 | 2018-03-27 | 中国科学技术大学 | A kind of low-power consumption low-noise amplifier for strengthening technology using positive feedback technique and active transconductance |
| CN104270100A (en) * | 2014-08-28 | 2015-01-07 | 中国科学技术大学 | Low-power low-noise amplifier utilizing positive feedback technique and active transconductance enhancement technique |
| CN107148749A (en) * | 2014-10-29 | 2017-09-08 | 高通股份有限公司 | Transformer feedback amplifier |
| CN107148749B (en) * | 2014-10-29 | 2020-07-17 | 高通股份有限公司 | Transformer feedback amplifier |
| CN107276547A (en) * | 2017-06-06 | 2017-10-20 | 江苏微远芯微系统技术有限公司 | A kind of single chip integrated millimeter wave switch-mode power amplifier circuit |
| CN107276547B (en) * | 2017-06-06 | 2020-06-26 | 江苏微远芯微系统技术有限公司 | Monolithic integrated millimeter wave switch mode power amplifier circuit |
| CN111510108A (en) * | 2020-05-13 | 2020-08-07 | 电子科技大学 | Quasi-circulator with broadband, low noise and high power tolerance |
| CN111510108B (en) * | 2020-05-13 | 2023-08-01 | 电子科技大学 | Quasi-circulator with broadband low noise and high power margin |
| CN114513176A (en) * | 2021-12-30 | 2022-05-17 | 电子科技大学 | Capacitive cross-coupling transconductance-enhanced low-noise amplifier based on cascode structure |
| CN114513176B (en) * | 2021-12-30 | 2024-03-22 | 电子科技大学 | Capacitive cross-coupling transconductance enhanced low-noise amplifier based on cascode structure |
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