CN103219951B - A kind of low-power consumption low noise amplifier adopting noise cancellation technique - Google Patents
A kind of low-power consumption low noise amplifier adopting noise cancellation technique Download PDFInfo
- Publication number
- CN103219951B CN103219951B CN201310095232.5A CN201310095232A CN103219951B CN 103219951 B CN103219951 B CN 103219951B CN 201310095232 A CN201310095232 A CN 201310095232A CN 103219951 B CN103219951 B CN 103219951B
- Authority
- CN
- China
- Prior art keywords
- grid
- noise
- amplifying stage
- stage
- noise cancellation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention provides a kind of low-power consumption low noise amplifier adopting noise cancellation technique, comprise alternative baluns (1), the common grid amplifying stage (2) of capacitive cross coupling, feed-forward noise cancellation stage (3), main grid amplifying stage (4) and load impedance (5) altogether.The mode of the common grid amplifying stage that the present invention adopts capacitive cross to be coupled and main grid amplifying stage cascade altogether, has carried out secondary enhancing to mutual conductance, has realized higher equivalent transconductance with low-power consumption; Feed-forward noise cancellation stage, can reduce the noise contribution of the common grid amplifying stage of capacitive cross coupling; The gain that the common grid amplifying stage of capacitive cross coupling and feed-forward noise cancellation stage provide can suppress the noise contribution of main grid amplifying stage altogether.The present invention passes through the combination of the enhancing of mutual conductance secondary and feed-forward noise cancellation technology, achieves low-noise factor and low-power consumption.
Description
Technical field
The present invention relates to a kind of low-power consumption low noise amplifier adopting noise cancellation technique, there is the feature of low-noise factor low-power consumption, belong to technical field of radio frequency integrated circuits.
Background technology
Low noise amplifier is the key modules of receiver in wireless transmitting system, and it is generally connected with antenna, amplifies the small-signal received, and reduces the deterioration to signal as far as possible.Port match, gain, noise factor, power consumption and the linearity are the important technological parameters of low noise amplifier.
Traditional low noise amplifier adopts source class inductive feedback technology, can provide arrowband Input matching and lower noise factor, but this structure needs on-chip inductor, and is not suitable for broadband system.Adopt the low noise amplifier of noise cancellation technique can at the lower noise factor of bandwidth realization, but power consumption be larger.Adopt the low noise amplifier of common gate structure to have the characteristic of broadband Input matching and lower power consumption, but noise factor is larger.
Fig. 1 is the common gate structure low noise amplifier after improving, and have employed differential capacitance cross-coupling technique.The common grid amplifying stage (2) that the common gate structure low noise amplifier improved is coupled by alternative baluns (1), capacitive cross and load stage (3) form.Single-ended signal is converted into differential signal and provides source class direct current biasing for NM1 and NM2 by alternative baluns (1).The common grid amplifying stage (2) of capacitive cross coupling is made up of common grid amplifier tube NM1 and NM2, differential input signal is coupled to the grid of relative transistor by cross-linked electric capacity C1 with C2, signal voltage between the grid source of common grid amplifier tube NM1 and NM2 is doubled, thus increase the equivalent transconductance of grid amplifier tube altogether, reduce noise factor and power consumption.Load stage (3) is by electric capacity, and resistance, one or more in the passive devices such as inductance form.Only consider the noise contribution of grid amplifier tube altogether, under the hypothesis that input impedance and source impedance are mated completely, the noise factor of this circuit is:
F=1+γ/2(1)
In order to reduce power consumption further, secondary mutual conductance enhancing technology can be adopted, the i.e. main cathode-input amplifier of cascade one-level after capacitive cross coupling cathode-input amplifier, the source class of main cathode-input amplifier is connected with input differential signal, as shown in Figure 2, list of references [1] (F.Belmas, F.Hameau, andJ.-M.Fournier, " ALowPowerInductorlessLNAwithDoubleGmEnhancementin130nmCM OS, " IEEEJ.Solid-StateCircuits, vol.47, no.5, pp.1094 – 1103, May.2012.).Such structure can realize larger equivalent transconductance by very little power consumption, provides good Input matching and higher gain.Such structure can suppress the noise contribution of main grid amplifier tube altogether, but is total to the noise suppressed of grid amplifier tube not for cross capacitance coupling, makes the noise factor of whole circuit higher.
Summary of the invention
Technology of the present invention is dealt with problems: overcome the deficiencies in the prior art, a kind of low-power consumption low noise amplifier adopting noise cancellation technique is provided, strengthened and the combination of feed-forward noise cancellation technology by mutual conductance secondary, achieve low-noise factor and low-power consumption, solve the problem that the noise factor of the common grid low noise amplifier of existing low-power consumption is higher.
The invention provides following technical scheme: a kind of low-power consumption low noise amplifier adopting noise cancellation technique, comprise alternative baluns 1, the common grid amplifying stage 2 of capacitive cross coupling, feed-forward noise cancellation stage 3, main grid amplifying stage 4 and load impedance 5 altogether.The common grid amplifying stage 2 of capacitive cross coupling and main grid amplifying stage 4 cascade altogether; Two balance output ends common grid amplifying stage 2 be coupled with capacitive cross and the input direct-coupling leading grid amplifying stage 4 altogether of alternative baluns 1, namely two balance output ends of alternative baluns 1 are connected with the source class of two-stage cathode-input amplifier, and alternative baluns 1 two balance output ends are connected by capacitive coupling with the grid end of feed-forward noise cancellation stage 3 simultaneously; The drain terminal of feed-forward noise cancellation stage 3 is connected to the drain terminal of the common grid amplifying stage 2 of capacitive cross coupling, and is connected to the grid of main grid amplifying stage 4 altogether by capacitive coupling; Load impedance 5 connects with the drain electrode of main grid amplifying stage 4 altogether; Feed-forward noise cancellation stage 3 is stacked on the common grid amplifying stage 2 of capacitive cross coupling as load transistor, and common DC electric current, can reduce power consumption; And the common grid amplifying stage 2 that feed-forward noise cancellation stage 3 is coupled for capacitive cross provides extra noise cancellation path, the noise contribution of common grid amplifier tube NM1 and NM2 at difference output end Vo can be reduced;
The common grid amplifying stage 2 of capacitive cross coupling adopts two identical N-type transistor NM1 and NM2 as input amplifier tube, the grid end of NM1 and NM2 receives bias voltage vb1 respectively by large resistance R1 and R2, the two ends of electric capacity C1 connect the source class of NM1 and the grid of NM2 respectively, and the two ends of electric capacity C2 connect the source class of NM2 and the grid of NM1 respectively;
Main grid amplifying stage 4 is altogether with two identical N-type transistor NM3 and NM4 as inputting amplifier tube, and the grid end of NM1 and NM2 receives bias voltage vb2 respectively by large resistance R3 and R4;
The single ended input 1 of alternative baluns 1 is connected to signal source, and balance output end 2 is directly coupled to the source class of NM1 and the source class of NM4, and balance output end 3 is directly coupled to the source class of NM2 and the source class of NM3, the 4th end and the 5th end ground connection;
Feed-forward noise cancellation stage 3) be made up of two identical P-type crystal pipe PM1 and PM2, the source class of PM1 and PM2 receives power supply, the drain electrode of PM1 is connected with the drain electrode of NM1 and is coupled to NM3 by electric capacity C5, the drain electrode of PM2 is connected with the drain electrode of NM2 and is coupled to NM4 by electric capacity C6, and the grid of PM1 and PM2 receives bias voltage vb3 respectively by large resistance R5 and R6; The common grid amplifying stage 2 of capacitive cross coupling and feed-forward noise cancellation stage 3 are by capacitive coupling, and the two ends of C4 receive the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 receive the source class of NM2 and the grid of PM1 respectively;
Load impedance 5 is made up of impedance Z 1 and Z2, and by resistance, inductance, one or several in electric capacity passive device combine, and the drain electrode of power supply and NM3 is received at the two ends of Z1 respectively, and the drain electrode of power supply and NM4 is received at the two ends of Z2 respectively.
The present invention's advantage is compared with prior art:
(1) the common grid amplifying stage of the capacitive cross coupling in the present invention and main grid amplifying stage cascade altogether, two balance output ends of alternative baluns are connected with the source class of two-stage cathode-input amplifier respectively, this connected mode can carry out secondary enhancing to mutual conductance, realize larger equivalent transconductance with low-power consumption, reduce circuit power consumption;
(2) feed-forward noise cancellation stage of the present invention is that the common grid amplifying stage that capacitive cross is coupled provides extra noise cancellation path, can reduce the noise contribution of common grid amplifier tube NM1 and NM2 at difference output end Vo;
(3) feed-forward noise cancellation stage of the present invention is stacked on the common grid amplifying stage of capacitive cross coupling, PM1 and PM2 is simultaneously as load transistor, and feed-forward noise cancellation stage and cross-linked grid amplifying stage common DC electric current altogether, reduce power consumption power consumption;
(4) feed-forward noise cancellation stage P-type crystal pipe PM1 and PM2 of the present invention realizes, on the N-type transistor NM1 being stacked in the common grid amplifying stage of capacitive cross coupling and NM2, such connected mode required voltage nargin is less, can adopt low voltage power supply, reduce power consumption;
(5) feed-forward noise cancellation stage P-type crystal pipe PM1 and PM2 of the present invention realizes, therefore the output impedance of the common grid amplifying stage of capacitive cross coupling is the drain terminal impedance parallel connection of transistor, the high-gain of the common grid amplifying stage of capacitive cross coupling contributes to the noise contribution suppressing main cathode-input amplifier, also contributes to the high-gain of whole low noise amplifier;
Accompanying drawing explanation
Fig. 1 adopts the cross-linked grid low noise amplifier altogether of differential capacitance in prior art;
Fig. 2 is the common grid low noise amplifier adopting secondary mutual conductance enhancing technology in prior art;
Fig. 3 is the low-power consumption low noise amplifier structural representation of employing noise cancellation technique provided by the invention;
Fig. 4 is the schematic diagram that alternative baluns offsets noise;
Fig. 5 is the schematic diagram of capacitive cross coupling counters noise;
Fig. 6 is that main grid amplifying stage altogether offsets the schematic diagram of noise;
Fig. 7 is the schematic diagram that feed-forward noise cancellation stage offsets noise.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The specific embodiment of the present invention provides a kind of low-power consumption low noise amplifier adopting noise cancellation technique, as shown in Figure 3, alternative baluns 1, the common grid amplifying stage 2 of capacitive cross coupling, feed-forward noise cancellation stage 3, main grid amplifying stage 4 and load impedance 5 is altogether comprised.
The common grid amplifying stage 2 of capacitive cross coupling with two identical N-type transistor NM1 and NM2 as inputting amplifier tube, the grid end of NM1 and NM2 receives bias voltage vb1 respectively by large resistance R1 and R2, the two ends of electric capacity C1 connect the source class of NM1 and the grid of NM2 respectively, and the two ends of electric capacity C2 connect the source class of NM2 and the grid of NM1 respectively;
Main grid amplifying stage 4 is altogether with two identical N-type transistor NM3 and NM4 as inputting amplifier tube, and the grid end of NM1 and NM2 receives bias voltage vb2 respectively by large resistance R3 and R4;
The single ended input 1 of alternative baluns 1 is connected to signal source, and balance output end 2 is directly coupled to the source class of NM1 and the source class of NM4, and balance output end 3 is directly coupled to the source class of NM2 and the source class of NM3, the 4th end and the 5th end ground connection;
Feed-forward noise cancellation stage 3 is made up of two identical P-type crystal pipe PM1 and PM2, the source class of PM1 and PM2 receives power supply, the drain electrode of PM1 is connected with the drain electrode of NM1 and is coupled to NM3 by electric capacity C5, the drain electrode of PM2 is connected with the drain electrode of NM2 and is coupled to NM4 by electric capacity C6, and the grid of PM1 and PM2 receives bias voltage vb3 respectively by large resistance R5 and R6;
The common grid amplifying stage 2 of capacitive cross coupling and feed-forward noise cancellation stage 3 are by capacitive coupling, and the two ends of C4 receive the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 receive the source class of NM2 and the grid of PM1 respectively;
Load impedance 5 is made up of resistance Z1 and Z2, and noninductive being designed with helps save cost, and the drain electrode of power supply and NM3 is received at the two ends of Z1 respectively, and the drain electrode of power supply and NM4 is received at the two ends of Z2 respectively.
The Main Noise Sources of cathode-input amplifier is the channel noise of common grid amplifier transistor, can be equivalent to one flows to source class noise current from transistor drain.For the channel noise of NM1, noise current flows to source class from the drain electrode of NM1, produces the noise voltage of a positive at NM1 source class, at the noise voltage that NM1 drain electrode generation one is anti-phase, produces the noise voltage of a homophase further in the drain electrode of NM3.Except alternative baluns, capacitive cross coupling and main grid amplifying stage three noise cancellation paths altogether, the present invention devises extra noise forward path, produce relevant homophase noise voltage, thus difference output end Vo can offset most NM1 noise contribution at the drain terminal of NM4.
Four noise cancellation path that the present invention adopts, its principle is as follows:
1, alternative baluns
Alternative baluns offsets the principle of noise as shown in Figure 4.The source class noise voltage of transistor NM1 can be coupled to the source class of transistor NM2, and due to the effect of intercoupling of desirable balance balun transformer, the noise voltage of the source class generation of NM2 is identical with the noise voltage amplitude of NM1 source class and phase place is contrary.The source class noise voltage of NM2 is amplified to the drain terminal of NM2 through the common grid of NM2, and NM2 leaks the noise voltage of level and the noise voltage homophase of NM2 source class, the noise voltage homophase also drained with NM1.The noise voltage of NM2 drain electrode is coupled to the grid of NM4 and through the drain electrode being amplified to NM4 of NM4, the noise voltage of generation and the NM2 noise voltage that drains is anti-phase through electric capacity C6, to drain noise voltage homophase with NM3.Such difference output end can offset the common-mode noise of a part, reduces the noise factor of circuit.
2, capacitive cross coupling
Capacitive cross coupled structure offsets the principle of noise as shown in Figure 5.The source class noise voltage of transistor NM1 is coupled to the grid of NM2 by electric capacity C1, NM2 grid noise voltage is identical with NM1 source class noise voltage amplitude same phase.NM2 grid noise voltage is amplified to the drain electrode of NM2 by the common source of NM2, the drain electrode noise voltage of NM2 and NM2 grid noise voltage inversion, to drain noise voltage homophase with NM1.The noise voltage of NM2 drain electrode is coupled to the grid of NM4 and through the drain electrode being amplified to NM4 of NM4, the noise voltage of generation and the NM2 noise voltage that drains is anti-phase through electric capacity C6, to drain noise voltage homophase with NM3.Therefore, difference output end can offset the common-mode noise of a part, reduces the noise factor of circuit.
3, main grid amplifying stage altogether
Main grid amplifying stage altogether offsets the principle of noise as shown in Figure 6.The source class noise voltage of transistor NM1 is directly coupled to the source class of NM4, NM4 source electrode noise voltage by NM4 altogether grid be amplified to the drain electrode of NM4, the noise voltage of generation and NM4 source electrode noise voltage homophase, to drain noise voltage homophase with NM3.Therefore, difference output end can offset the common-mode noise of a part, reduces the noise factor of circuit.
4, feed-forward noise cancellation stage
Feed-forward noise cancellation stage offsets the principle of noise as shown in Figure 7.The source class noise voltage of transistor NM1 is coupled to the grid of PM2 by electric capacity C4, PM2 grid noise voltage is identical with NM1 source class noise voltage amplitude same phase.PM2 grid noise voltage is amplified to the drain electrode (i.e. the drain electrode of NM2) of PM2 by the common source of PM2, the drain electrode noise voltage of NM2 and PM2 grid noise voltage inversion, to drain noise voltage homophase with NM1.The noise voltage of NM2 drain electrode is coupled to the grid of NM4 and through the drain electrode being amplified to NM4 of NM4, the noise voltage of generation and the NM2 noise voltage that drains is anti-phase through electric capacity C6, to drain noise voltage homophase with NM3.Therefore, difference output end can offset the common-mode noise of a part, reduces the noise factor of circuit.
Under the effect of above-mentioned four noise cancellation path, create the noise voltage of the leakage level homophase of and NM3 in the drain electrode of NM4.Extra noise cancellation path, makes difference output end can offset the noise of more multiple transistor NM1.Due to the symmetry of full-differential circuits, difference output end can offset the noise of more transistor NM2 equally.
Capacitive cross coupling altogether grid amplifying stage and feed-forward noise amplifying stage provided certain gain before main grid amplifying stage altogether, can suppress main grid amplifier tube NM3 altogether like this, the noise contribution of NM4.Like this, four are total to grid amplifier tube, and the noise contribution of NM1, NM2, NM3, NM4 is obtained for suppression, and the noise factor of whole circuit reduces.
The present invention, by the design of additional noise err path, makes the noise of common grid amplifier tube be cancelled at difference output end, reduces the noise factor of circuit.
The technical scheme adopting the specific embodiment of the invention to provide, can realize following technique effect:
1, the present invention two-stage cathode-input amplifier carries out secondary enhancing to mutual conductance, realizes larger equivalent transconductance, reduce circuit power consumption with low-power consumption;
2, feed-forward noise cancellation stage of the present invention is that the common grid amplifying stage that capacitive cross is coupled provides extra noise cancellation path, can reduce the noise contribution of common grid amplifier tube NM1 and NM2 at difference output end Vo;
3, feed-forward noise cancellation stage of the present invention is stacked on the common grid amplifying stage of capacitive cross coupling, PM1 and PM2 is simultaneously as load transistor, and feed-forward noise cancellation stage and cross-linked grid amplifying stage common DC electric current altogether, reduce power consumption power consumption;
4, feed-forward noise cancellation stage P-type crystal pipe PM1 and PM2 of the present invention realizes, on the N-type transistor NM1 being stacked in the common grid amplifying stage of capacitive cross coupling and NM2, such connected mode required voltage nargin is less, can adopt low voltage power supply, reduce power consumption;
5, feed-forward noise cancellation stage P-type crystal pipe PM1 and PM2 of the present invention realizes, therefore the output impedance of the common grid amplifying stage of capacitive cross coupling is the drain terminal impedance parallel connection of transistor, the high-gain of the common grid amplifying stage of capacitive cross coupling contributes to the noise contribution suppressing main cathode-input amplifier, also contributes to the high-gain of whole low noise amplifier.
In a word, the mode of the common grid amplifying stage that the present invention adopts capacitive cross to be coupled and main grid amplifying stage cascade altogether, has carried out secondary enhancing to mutual conductance, has realized higher equivalent transconductance with low-power consumption; Feed-forward noise cancellation stage, can reduce the noise contribution of the common grid amplifying stage of capacitive cross coupling; The gain that the common grid amplifying stage of capacitive cross coupling and feed-forward noise cancellation stage provide can suppress the noise contribution of main grid amplifying stage altogether.The present invention passes through the combination of the enhancing of mutual conductance secondary and feed-forward noise cancellation technology, achieves low-noise factor and low-power consumption.
Non-elaborated part of the present invention belongs to techniques well known.
The above; be only the present invention's preferably embodiment; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the embodiment of the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (1)
1. adopt a low-power consumption low noise amplifier for noise cancellation technique, it is characterized in that: comprise alternative baluns (1), the common grid amplifying stage (2) of capacitive cross coupling, feed-forward noise cancellation stage (3), main grid amplifying stage (4) and load impedance (5) altogether; The common grid amplifying stage (2) of capacitive cross coupling and main grid amplifying stage (4) cascade altogether; The common grid amplifying stage (2) that two balance output ends and the capacitive cross of alternative baluns (1) are coupled is connected with the source class of main grid amplifying stage (4) altogether, and alternative baluns (1) two balance output end is connected by capacitive coupling with the grid end of feed-forward noise cancellation stage (3) simultaneously; The drain terminal of feed-forward noise cancellation stage (3) is connected to the drain terminal of the common grid amplifying stage (2) of capacitive cross coupling, and is connected to the grid of main grid amplifying stage (4) altogether by capacitive coupling; Load impedance (5) connects with the drain electrode of main grid amplifying stage (4) altogether;
The N-type transistor NM1 that common grid amplifying stage (2) employing two that capacitive cross is coupled is identical and NM2 is as input amplifier tube, the grid end of NM1 and NM2 receives bias voltage vb1 respectively by large resistance R1 and R2, the two ends of electric capacity C1 connect the source class of NM1 and the grid of NM2 respectively, and the two ends of electric capacity C2 connect the source class of NM2 and the grid of NM1 respectively;
Main grid amplifying stage (4) is altogether with two identical N-type transistor NM3 and NM4 as inputting amplifier tube, and the grid end of NM3 and NM4 receives bias voltage vb2 respectively by large resistance R3 and R4;
The single ended input 1 of alternative baluns (1) is connected to signal source, and balance output end 2 is directly coupled to the source class of NM1 and the source class of NM4, and balance output end 3 is directly coupled to the source class of NM2 and the source class of NM3, the 4th end and the 5th end ground connection;
Feed-forward noise cancellation stage (3) is made up of two identical P-type crystal pipe PM1 and PM2, the source class of PM1 and PM2 receives power supply, the drain electrode of PM1 is connected with the drain electrode of NM1 and is coupled to NM3 by electric capacity C5, the drain electrode of PM2 is connected with the drain electrode of NM2 and is coupled to NM4 by electric capacity C6, and the grid of PM1 and PM2 receives bias voltage vb3 respectively by large resistance R5 and R6;
The common grid amplifying stage (2) of capacitive cross coupling and feed-forward noise cancellation stage (3) are by capacitive coupling, and the two ends of C4 receive the source class of NM1 and the grid of PM2 respectively, and the two ends of C3 receive the source class of NM2 and the grid of PM1 respectively;
Load impedance (5) is made up of impedance Z 1 and Z2, and the drain electrode of power supply and NM3 is received at the two ends of Z1 respectively, and the drain electrode of power supply and NM4 is received at the two ends of Z2 respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310095232.5A CN103219951B (en) | 2013-03-22 | 2013-03-22 | A kind of low-power consumption low noise amplifier adopting noise cancellation technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310095232.5A CN103219951B (en) | 2013-03-22 | 2013-03-22 | A kind of low-power consumption low noise amplifier adopting noise cancellation technique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103219951A CN103219951A (en) | 2013-07-24 |
| CN103219951B true CN103219951B (en) | 2015-12-02 |
Family
ID=48817504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310095232.5A Expired - Fee Related CN103219951B (en) | 2013-03-22 | 2013-03-22 | A kind of low-power consumption low noise amplifier adopting noise cancellation technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103219951B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762947B (en) * | 2014-01-13 | 2016-05-18 | 东南大学 | A kind of low noise trsanscondutance amplifier of cross-couplings input |
| CN104065346B (en) * | 2014-06-25 | 2017-04-12 | 中国电子科技集团公司第三十八研究所 | Broadband low noise amplifier circuit based on cross-coupled feedback |
| CN104167993B (en) * | 2014-08-28 | 2017-05-17 | 中国科学技术大学 | Differential low-power consumption and low noise amplifier with active transconductance enhancement and noise counteraction technology adopted |
| CN104270100B (en) * | 2014-08-28 | 2018-03-27 | 中国科学技术大学 | A kind of low-power consumption low-noise amplifier for strengthening technology using positive feedback technique and active transconductance |
| US9628031B2 (en) * | 2014-10-29 | 2017-04-18 | Qualcomm Incorporated | Transformer feedback amplifier |
| CN104883136B (en) * | 2015-05-05 | 2017-12-15 | 电子科技大学 | A kind of single-ended grid CMOS low-noise amplifiers altogether of negative resistance formula |
| CN107592086B (en) * | 2017-07-26 | 2020-05-19 | 湖北大学 | High-gain ultrahigh-working-rate amplifier circuit |
| CN109560775B (en) * | 2017-09-27 | 2023-04-14 | 深圳市中兴微电子技术有限公司 | Low-noise amplifier circuit |
| CN109546969A (en) * | 2018-10-29 | 2019-03-29 | 电子科技大学 | Distort CMOS low-noise amplifier after one kind |
| CN111478671B (en) * | 2020-04-13 | 2023-04-14 | 电子科技大学 | Novel low-noise amplifier applied to Sub-GHz frequency band |
| CN111504347B (en) * | 2020-04-28 | 2021-12-17 | 中国电子科技集团公司第二十八研究所 | Low-noise signal detection system |
| CN114665826B (en) * | 2022-05-23 | 2022-10-04 | 苏州瀚宸科技有限公司 | Non-fully differential circuit system for improving power supply voltage rejection ratio |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101110573A (en) * | 2007-06-28 | 2008-01-23 | 复旦大学 | Ultra-broadband low-noise amplifier circuit adopting noise cancellation technology |
| CN101951230A (en) * | 2010-09-03 | 2011-01-19 | 华东师范大学 | Broadband low noise amplifier |
| CN102332868A (en) * | 2011-10-18 | 2012-01-25 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
| CN102801389A (en) * | 2012-08-30 | 2012-11-28 | 东南大学 | Ultra-low power consumption low-noise amplifier |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101105379B1 (en) * | 2010-08-17 | 2012-01-16 | 한국과학기술원 | Low noise amplifier and radio receiver |
-
2013
- 2013-03-22 CN CN201310095232.5A patent/CN103219951B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101110573A (en) * | 2007-06-28 | 2008-01-23 | 复旦大学 | Ultra-broadband low-noise amplifier circuit adopting noise cancellation technology |
| CN101951230A (en) * | 2010-09-03 | 2011-01-19 | 华东师范大学 | Broadband low noise amplifier |
| CN102332868A (en) * | 2011-10-18 | 2012-01-25 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
| CN102801389A (en) * | 2012-08-30 | 2012-11-28 | 东南大学 | Ultra-low power consumption low-noise amplifier |
Non-Patent Citations (3)
| Title |
|---|
| Design of UWB Circuits with Inductive Peaking Technique;Han Wang等;《Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on》;20120508;第1卷;第1-4页 * |
| 基于噪声抵消技术的宽带低噪声放大器设计;唐学锋等;《微电子学与计算机》;20130105;第30卷(第1期);第135-138页 * |
| 基于噪声相消和线性度提高的低噪声放大器;刘华珠等;《华中科技大学学报（自然科学版）》;20090315;第37卷(第3期);第43-45页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103219951A (en) | 2013-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103219951B (en) | A kind of low-power consumption low noise amplifier adopting noise cancellation technique | |
| CN103248324B (en) | A kind of high linearity low noise amplifier | |
| CN103219952B (en) | A kind of wideband low noise amplifier adopting noise cancellation technique | |
| CN105262443B (en) | A kind of High Linear low-noise trans-conductance amplifier | |
| CN105720942B (en) | A kind of superwide band low noise height balances on-chip active balun | |
| CN103490731B (en) | A kind of Low-noise passive frequency mixer | |
| CN102497167B (en) | Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation | |
| CN104167993B (en) | Differential low-power consumption and low noise amplifier with active transconductance enhancement and noise counteraction technology adopted | |
| CN104270100B (en) | A kind of low-power consumption low-noise amplifier for strengthening technology using positive feedback technique and active transconductance | |
| CN102332868A (en) | Low-power-consumption wideband low-noise amplifier | |
| CN102946230A (en) | Ultra-wide band low-noise single-ended input and differential output amplifier | |
| CN102332867B (en) | Low-noise amplifier with single-end circuit compensation structure | |
| CN105305981B (en) | One kind linearisation wideband low noise amplifier | |
| CN103078593B (en) | Lower-power-supply-voltage high-conversion-gain passive mixer | |
| CN104702219A (en) | Single-ended input double-balanced passive frequency mixer | |
| CN109379051A (en) | A kind of wideband low noise amplifier of double mode high-gain, low noise | |
| CN101924524A (en) | Differential complementary metal-oxide-semiconductor (CMOS) multi-mode low-noise amplifier with on-chip active Balun | |
| CN104065346B (en) | Broadband low noise amplifier circuit based on cross-coupled feedback | |
| CN111245373A (en) | Ultra-wideband low-noise amplifier adopting partial active negative feedback technology and positive feedback technology | |
| CN102332877B (en) | Differential complementary metal oxide semiconductor (CMOS) multimode low-noise amplifier with on-chip active Balun | |
| CN105656433A (en) | Low noise amplifier | |
| CN114710124A (en) | Rail-to-rail input and output operational transconductance amplifier based on low ripple charge pump | |
| CN106559042A (en) | The low-noise amplifier being applied under low-voltage | |
| CN202772848U (en) | Fully third generation telecommunication (3G) complementary metal oxide semiconductor (CMOS) difference low noise amplifier based on controllable active inductor | |
| CN209345109U (en) | Low-noise amplifier based on global noise counteracting method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 Termination date: 20210322 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |