CN104065346B - Broadband low noise amplifier circuit based on cross-coupled feedback - Google Patents
Broadband low noise amplifier circuit based on cross-coupled feedback Download PDFInfo
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Abstract
The invention discloses a broadband low noise amplifier based on the cross-coupled feedback. The amplifier comprises a CG (Common Gate) input stage, a cascade stage and a resistive load stage, wherein the CG input stage comprises an NMOS (N-channel metal oxide semiconductor) transistor M2; the cascade stage comprises an NMOS transistor M3; the resistive load stage comprises a resistor RL1 and a resistor RL2; the source electrode of the M2 is grounded by a node X; the drain electrode of the M2 is connected to the negative end of the resistor RL1; the positive end of the RL1 is connected to a power source VDD; the drain electrode of the M3 is connected to the negative end of the resistor RL2; the positive end of the RL2 is connected to the power source VDD; a radio frequency input signal Vi is input from the node X; a signal Vout + is output from the drain electrode of the M2; a signal Vout-is output from the drain electrode of the M3; the grid electrode of the M3 is connected to the node X by a coupling capacitor; the grid electrode of the M2 is connected to the source electrode of the M3 by a coupling capacitor; a signal source and a signal source internal resistor which are connected in series are connected to the node X in series by a coupling capacitor; Vb2 and Vb3 respectively provide bias voltage for the M2 and the M3 by biasing resistors. The broadband low noise amplifier based on the cross-coupled feedback has the advantages that a capacitance cross-coupled feedback technology is used between the CG input stage and the cascade stage, so that the amplifier has low noise index and is low in power consumption.
Description
Technical field
The invention belongs to integrated circuit fields, more particularly to a kind of low-noise amplifier.
Background technology
Extensive with current various standard communications protocol applies (such as DTV, WIFI, and bluetooth etc.), compatible
The software and radio technique of multiple communication protocols becomes important all the more.Just because of this, in recent years industry to broadband transmit-receive technology
Research and development grow with each passing day.Because LNA (low-noise amplifier) is typically the first order of receiver, its noise is most important, so
LNA noise optimization problems in broadband become the key of broadband reception technology.Additionally, the acquisition of low noise can not use big work(
Consume to exchange, because low-power consumption is equally the important theme of chip design.
So far, there are two kinds of broadband LNA for commonly using topological：One kind is single-ended grid (CG) LNA altogether, and another kind is altogether
Grid-common source (CG-CS) LNA.Two kinds of structures all employ common gate input structure, possess big bandwidth and good isolation is special
Property.Notice that the noise of single-ended CG LNA is larger, it is possible to use capacitive cross coupling (CCC) feedback as shown in Figure 1 is changed
Kind (W.Zhuo, X.Li, S.Shekhar, S.H.K.Embabi, J.Pineda de Gyvez, D.J.Allstot, and
E.Sanchez-Sinencio,“A capacitor cross-coupled common-gate low noise
amplifier,”IEEE Trans.Circuits Syst.II,Express Briefs,vol.52,no.12,pp.875–
879,Dec.2005.).Unfortunately, that single ended input is converted to difference is defeated for the balun that CCC CG LNA need outside a piece
Enter.But the outer passive balun of the piece in broadband is usually constructed with high loss, and this noise to receiver is extremely disadvantageous.Normally, it is
Driving the differential mixer of rear class and single-ended signal being received from antenna, balun LNA seems particularly attractive.Integrate,
This cause balun CG-CS LNA as shown in Figure 2 it is more competitive (S.C.Blaakmeer, E.A.M.Klumperink,
D.M.W.Leenaerts,and B.Nauta,“Wideband balun-LNA with simultaneous output
balancing,noise-canceling and distortion-canceling,”IEEE J.Solid-State
Circuits,vol.43,no.6,pp.1341–1350,Jun.2008).Additionally, its noise eliminates characteristic to cause to have concurrently well
The linearity.Nonetheless, in order to obtain low noise figure, its CS level will consume big power.
The content of the invention
The technical problem to be solved is that offer is a kind of is obtained in that low noise figure has low-power consumption again
Cross-coupled feedback broadband low-noise amplifier.
The present invention solves above-mentioned technical problem using following technological means：A kind of broadband low noise of cross-coupled feedback
Acoustic amplifier, including CG input stages, cascaded stages, ohmic load level；
The CG input stages include NMOS tube M2, and cascaded stages include NMOS tube M3.Ohmic load level includes resistance RL1And electricity
Resistance RL, the source electrode of NMOS tube M2 is connected to the ground by nodes X, and the drain electrode of NMOS tube M2 is connected to resistance RL1Negative terminal, resistance RL1Just
It is connected to power supply VDD, the grid of NMOS tube M3 is connected to nodes X by coupled capacitor, and the grid of NMOS tube M2 passes through coupled capacitor
Node M is connected to, node M is connected to the source electrode of NMOS tube M3, signal source Vs being sequentially connected in series and singal source resistance Rs, by coupling
Capacitance series are closed in nodes X, the drain electrode of NMOS tube M3 is connected to resistance RL2Negative terminal, resistance RL2Power supply V is being connected to justDD, radio frequency is defeated
Enter signal ViIt is input into from nodes X, Vb2、Vb3It is that NMOS tube M2 and M3 provide bias voltage by biasing resistor respectively, from NMOS
Drain electrode output signal Vout+ of pipe M2, from drain electrode output signal Vout- of NMOS tube M3.
Used as what is further optimized, the CG input stages also include inductance Ls, and the source electrode of NMOS tube M2 is connected by nodes X
To inductance Ls anodes, inductance Ls negative terminals are connected to ground.
Used as the structure of optimization, a kind of broadband low-noise amplifier of cross-coupled feedback of the invention also includes stacking knot
The CS input stages of structure, the CS input stages of the stacked structure include NMOS tube M1, PMOS M4.NMOS tube M1, PMOS
The grid of M4 is connected to nodes X by capacitance, and the source electrode of NMOS tube M1 is connected to ground, and M4 source electrodes are connected to power supply VDD,
The drain electrode of NMOS tube M1 and PMOS M4 is connected to node M, and the substrate of NMOS tube M1 is directly connected in nodes X, PMOS M4
Substrate is connected to nodes X by capacitance, and the substrate of PMOS M4 is connected to power supply V by biasing resistorDD, Vb1、Vb4Point
It is that NMOS tube M1 and PMOS M4 provide bias voltage not by big biasing resistor, radio-frequency input signals is input into pole from CG
The source electrode input of NMOS tube M2, amplifies drain electrode output signal Vout+ after NMOS tube M2 through CG input stages homophase, separately all the way
All the way through anti-phase drain electrode output signal Vout- amplified after NMOS tube M3 of CS input stages of stacked structure.
It is an advantage of the current invention that：
It is by capacitive cross Coupled Feedback technology is used between the transistor of the transistor and cascaded stages of CG input stages, low
The mutual conductance put of making an uproar is lifted.Additionally, the bulk effect of the transistor of the CS input stages of stacked structure be utilized further increase across
Lead so that the present invention significantly reduces circuit power consumption and low supply voltage work, it is possible in broadband obtain higher
Gain, and relatively low noise figure.
Description of the drawings
Fig. 1 is existing capacitive cross Coupled Feedback grid input low-noise amplifier schematic diagram altogether；
Fig. 2 is existing grid-common source balun low-noise amplifier schematic diagram altogether；
Fig. 3 is a kind of schematic diagram of the broadband low-noise amplifier of cross-coupled feedback of the invention；
Fig. 4 is a kind of gain results curve of the broadband low-noise amplifier of cross-coupled feedback of the invention；
Fig. 5 is a kind of noise result curve of the broadband low-noise amplifier of cross-coupled feedback of the invention
Fig. 6 is a kind of IIP3 result figures of the broadband low-noise amplifier of cross-coupled feedback of the invention
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is below in conjunction with drawings and Examples, right
The present invention is further elaborated.
Fig. 3 is referred to, on the whole, a kind of broadband low-noise amplifier of cross-coupled feedback of the invention is broadband CMOS
CG-CS structures, including CG input stages, cascaded stages, ohmic load level.
CG input stages include NMOS tube M2 and inductance Ls, and cascaded stages include NMOS tube M3.Ohmic load level includes resistance RL1
With resistance RL2。
The source electrode of NMOS tube M2 is connected to inductance Ls anodes by nodes X, and inductance Ls negative terminals are connected to ground.NMOS tube M2
Drain electrode is connected to resistance RL1Negative terminal, resistance RL1Power supply V is being connected to justDD.Especially, the grid of NMOS tube M3 passes through coupled capacitor
Nodes X is connected to, the grid of NMOS tube M2 is connected to node M by coupled capacitor, and node M is connected to the source electrode of NMOS tube M3.
Signal source Vs being sequentially connected in series and singal source resistance Rs, are serially connected with nodes X by coupled capacitor.
The drain electrode of NMOS tube M3 is connected to resistance RL2Negative terminal, resistance RL2Power supply V is being connected to justDD。
Radio-frequency input signals ViIt is input into from nodes X, Vb2、Vb3It is that NMOS tube M2 and M3 are carried by big biasing resistor respectively
For bias voltage, from drain electrode output signal Vout+ of NMOS tube M2, from drain electrode output signal Vout- of NMOS tube M3.
Used as the structure of optimization, a kind of broadband low-noise amplifier of cross-coupled feedback of the invention also includes stacking knot
The CS input stages of structure.
The CS input stages of the stacked structure include NMOS tube M1, PMOS M4.The grid of NMOS tube M1, PMOS M4
Nodes X is connected to by capacitance extremely.The source electrode of NMOS tube M1 is connected to ground, and M4 source electrodes are connected to power supply VDD.NMOS tube
The drain electrode of M1 and PMOS M4 is connected to node M.The substrate of NMOS tube M1 is directly connected in nodes X, and the substrate of PMOS M4 leads to
Cross capacitance and be connected to nodes X, and the substrate of PMOS M4 is connected to power supply V by biasing resistorDD。
Vb1、Vb4It is that NMOS tube M1 and PMOS M4 provide bias voltage by big biasing resistor respectively.
Radio-frequency input signals is input into the source electrode input of NMOS tube M2 of pole from CG, all the way after the amplification of CG input stages homophase
In drain electrode output signal Vout+ of NMOS tube M2, another road through stacked structure the anti-phase amplification of CS input stages after NMOS tube
Drain electrode output signal Vout- of M3.
The Main Function of CG input stages is input impedance matching, the major function of cascaded stages be reduce stacked structure CS it is defeated
Enter the Miller effect of the parasitic gate-drain capacitance of the transistor of pole.Meanwhile, it can increase output impedance and improve input and output it
Between isolation.Capacitive cross Coupled Feedback is used between NMOS tube M2 and M3, for improving their mutual conductance.Additionally,
Stacked structure CS input stages employ body coupling technique (substrate of M1 is directly connected in nodes X, the substrate of M4 by every
Straight electric capacity, is connected to nodes X, and the substrate of M4 is connected to power supply V by biasing resistorDD) further increasing effective mutual conductance, this
Be conducive to the low noise and low power consumption characteristic of CS inputs pole.And, the parasitic electricity of the choke induction Ls and node equivalent at the nodes X
Hold and produce parallel resonance, constitute the input matching in whole bandwidth.
By the small-signal analysis to the CG-CS LNA with cross-coupled feedback, its voltage gain can be expressed as：
Wherein, gmiAnd gmbiIt is gate transconductance and body mutual conductance respectively, parameter ANEGAnd RL2It is the related mutual conductance of negative feedback respectively
The CS of Lifting Coefficients and stacked structure is input into the load resistance of pole.Parameter gm2And RL1Be respectively NMOS tube M2 gate transconductance and
The load resistance of CG input stages.In order to meet the difference output of balance, below condition need meet：
gm3RL2=gm2RL1 (3)
Then, overall gain can be reduced to again：
AV=2 (1+ANEG)gm3RL2=2 (1+ANEG)gm2RL1. (4)
Compare with traditional method, the body mutual conductance of the transistor of the CS input stages of stacked structure in formula (4) is utilized.Further, since
From ViTo the feedback path of the grid of M3, gm3It is also contained in equation so that the gain of LNA is further improved.In other words, by
In the utilization of the body mutual conductance of the transistor of the CS input stages of the cross-coupled feedback and stacked structure of the transistor of cascaded stages so that
In the case where the mutual conductance of equivalent CS levels is obtained, its bias current can be reduced.This is this topological major advantage.
Input impedance matching condition is：
Wherein, RsAnd RinIt is the genertor impedance and input impedance of LNA respectively.Compared with common CG-CS LNA, CG levels
Impedance matching mutual conductance must reduce (1+ANEG) times.In this case, the size and bias current of NMOS tube M2 can be able to
Reduce, so as to obtain the CG levels of low ghost effect and low-power consumption.
Under conditions of input impedance matching, the noise factor expression formula of LNA is：
Wherein, α and γ are biasing relevant parameters.Section 2 and Section 3 are respectively from NMOS tube M1 and PMOS M4.
Section 4 and Section 5 come from load RL1And RL2.Last comes from NMOS tube M3.Due to existing from resistance Rs to NMOS
The feedback channel of pipe M3 grids, it is no longer the cascade of a preferable noiseless contribution.However, from (6) as can be seen that because
gm3/4gm1(1+ANEG)2The presence of (our design load is 0.01), contribution of NMOS tube M3 to noise are much smaller than NMOS tube M1.
Therefore, caused by NMOS tube M3, NF deteriorations are negligible.Further, since the body of the transistor of the CS input stages of stacked structure
Effect, and gm3It is integrated in the mutual conductance of CS input stages of stacked structure, NMOS tube M1 and PMOS M4 subtract in bias current
Equivalent noise magnitude can be also maintained while little.
The LNA circuits are realized using 0.13 μm of RF CMOS technology.Powered using 1V power supplys, when parameter ANEGFor 2.5 when,
The bias current of transistor M1, M2 and M3 is respectively 3.68mA, 0.45mA, 1.8mA.RL1And RL2250 Ω and 100 are taken respectively
Ω.Fig. 4 gives LNA gain curves, shows to have obtained 18dB voltage gains in three dB bandwidth (0.1～4.4GHz), and Fig. 5 gives
Go out noise figure result, in the bandwidth of 0.1～4.4GHz, its maximum noise index NFmaxFor 3.2dB, occur in
4.4GHz, is about 2.7dB with interior minimal noise index.Using interval 5MHz constant amplitude two-tone signal respectively 1GHz, 2GHz,
3GHz frequencies test the linearity of low-noise amplifier, as shown in fig. 6, its input third order intermodulation (IIP3) test result is -4.5
～-7.4dBm.Result above shows that under 1V conditions of power supply, operating current is 4.1mA to the LNA, and existing grid-common source altogether
Balun low-noise amplifier is compared, and the amplifier easily realizes low-voltage and low-power consumption application.
Presently preferred embodiments of the present invention is the foregoing is only, not to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (2)
1. a kind of broadband amplifier circuit in low noise based on cross-coupled feedback, including CG input stages, cascaded stages, resistance is negative
Level is carried, the CG input stages include NMOS tube M2, and cascaded stages include NMOS tube M3；Ohmic load level includes resistance RL1And resistance
RL2, source electrode connecting node X of NMOS tube M2, the drain electrode of NMOS tube M2 are connected to resistance RL1Negative terminal, resistance RL1Just it is connected to
Power supply VDD, the drain electrode of NMOS tube M3 is connected to resistance RL2Negative terminal, resistance RL2Power supply V is being connected to justDD, radio-frequency input signals ViFrom
It is input at nodes X, from drain electrode output signal Vout+ of NMOS tube M2, from drain electrode output signal Vout- of NMOS tube M3, which is special
Levy and be：The grid of NMOS tube M3 is connected to nodes X by coupled capacitor, and the grid of NMOS tube M2 is connected by coupled capacitor
Node M is connected to, node M is connected to the source electrode of NMOS tube M3, signal source Vs being sequentially connected in series and singal source resistance Rs, by coupling
Capacitance series are in nodes X, Vb2、Vb3It is that NMOS tube M2 and M3 provide bias voltage by biasing resistor respectively；
CS input stage of the broadband low-noise amplifier of the cross-coupled feedback also including stacked structure, the stacked structure
CS input stages include NMOS tube M1, PMOS M4, NMOS tube M1, the grid of PMOS M4 are connected by capacitance
To nodes X, with being connected to, M4 source electrodes are connected to power supply V to the source electrode of NMOS tube M1DD, the drain electrode company of NMOS tube M1 and PMOS M4
Node M is connected to, the substrate of NMOS tube M1 is directly connected in nodes X, and the substrate of PMOS M4 is connected to node by capacitance
X, and the substrate of PMOS M4 is connected to power supply V by biasing resistorDD, Vb1、Vb4Respectively by big biasing resistor be NMOS tube
M1 and PMOS M4 provide bias voltage.
2. a kind of broadband amplifier circuit in low noise based on cross-coupled feedback as claimed in claim 1, its feature exist
In：The CG input stages also include inductance Ls, and the source electrode of NMOS tube M2 is connected to inductance Ls anodes by nodes X, and inductance Ls bears
End is connected to ground.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109167578A (en) * | 2018-08-06 | 2019-01-08 | 中国科学技术大学 | A kind of ultra-wideband low-noise amplifier with active inductance |
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| CN104883136B (en) * | 2015-05-05 | 2017-12-15 | 电子科技大学 | A kind of single-ended grid CMOS low-noise amplifiers altogether of negative resistance formula |
| CN106817085A (en) * | 2017-01-19 | 2017-06-09 | 中国科学院上海高等研究院 | A kind of radio frequency low-noise amplifier and its implementation |
| IL270376B2 (en) * | 2019-10-31 | 2023-06-01 | Rafael Advanced Defense Systems Ltd | A compact single stage wideband power amplifier |
| CN111478671B (en) * | 2020-04-13 | 2023-04-14 | 电子科技大学 | Novel low-noise amplifier applied to Sub-GHz frequency band |
| CN114513175B (en) * | 2021-12-30 | 2023-10-27 | 电子科技大学 | High-gain intermediate frequency amplifier with body-leakage cross coupling technology |
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| CN109167578A (en) * | 2018-08-06 | 2019-01-08 | 中国科学技术大学 | A kind of ultra-wideband low-noise amplifier with active inductance |
| CN109167578B (en) * | 2018-08-06 | 2020-08-28 | 中国科学技术大学 | Ultra-wideband low-noise amplifier with active inductor |
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