CN105991093A - Low noise amplifier having difference structure and pole elimination structure - Google Patents
Low noise amplifier having difference structure and pole elimination structure Download PDFInfo
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- CN105991093A CN105991093A CN201510074817.8A CN201510074817A CN105991093A CN 105991093 A CN105991093 A CN 105991093A CN 201510074817 A CN201510074817 A CN 201510074817A CN 105991093 A CN105991093 A CN 105991093A
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Abstract
A low noise amplifier having a difference structure and a pole elimination structure relates to a radio frequency reception improvement technique which can reduce the area of the conventional low noise amplifier and then improve the cost performance of chip manufacture. Compared with a low noise amplifier using a single end inductor, due to a symmetric structure of a difference inductor, the difference induction low noise amplifier has a good common mode rejection effect and less second order distortion; and meanwhile, compared with the conventional low noise amplifier, the low noise amplifier based on the difference inductor has few inductors, wherein the number of the inductor is reduced to 2 from 4, the area of the chip is reduced half, and then the cost is remarkably reduced. Compared with the conventional low noise amplifier without eliminating a central pole of a cascade amplifier, the low noise amplifier can reduce the influence due to the pole through pole resonance induction, allows whole frequency response to become more narrow, allows a higher quality factor, and then improves frequency response, suppresses outer noise and interferences, and decreases the noise coefficient of the whole system.
Description
Technical field
The present invention relates to a kind of low-noise amplifier with differential configuration and limit elimination structure, necessary for custom low noise amplifier 4 inductance can be reduced to 2 inductance, and the whole system inhibitory action to second order interference can be improved.
Background technology
At present, the front end of a radio frequency receiver is generally of low-noise amplifier, frequency mixer and frequency filter.Because low-noise amplifier is the first order of receptor, its performance usually limit the performance of overall receptor.
Traditional low-noise amplifier typically requires 4 single-ended inductors, thus occupy approximately twice as silicon area, and consume more power, and single-ended LNA exist the problems such as poor common mode inhibition and even-order harmonic distortion.
On the other hand, traditional low-noise amplifier generally uses common-source amplifier and source common-gate current amplifier to combine and is amplified noise, but there is parasitic capacitance in the place connected at common-source amplifier and cathode-input amplifier, a limit can be produced, affect rf frequency response, also can bring the decline of noiseproof feature.
Summary of the invention
The present invention provides a kind of low-noise amplifier with differential configuration and limit elimination structure.Use fully differential inductor design, it is possible to necessary for custom low noise amplifier 4 inductance are reduced to 2 inductance, the whole system inhibitory action to second order interference can also be improved simultaneously.
In order to improve the frequency response of total system, the method that the invention allows for using resonant inductance that the limit of cascade low-noise amplifier is improved.
Accompanying drawing explanation
The present invention is further described with embodiment below in conjunction with the accompanying drawings.
Fig. 1 is the circuit theory diagrams of the communication system receiving RF signal.
1. antenna input in figure, 2. radio-frequency filter, 3. attenuator, 4. differential inductance low-noise amplifier, 5. image-reject filter, 6. frequency mixer, 7. channel select filter, 8. base band output, 9. local oscillator.
Fig. 2 is the circuit theory diagrams of differential inductance low-noise amplifier.
10. radio frequency input anode in figure, the nmos device of 11. common source circuit, 12. radio frequency input negative terminals, the nmos device of 13. common source circuit, the nmos device of 14. common gate amplifying circuits, the nmos device of 15. common gate amplifying circuits, 16. limit resonant inductances, 17. load resonant inductance, the nmos device of 18. source class follower circuits, the nmos device of 19. source class follower circuits, 20. radio frequency output negative terminals, 21. radio frequency output plus terminals, 22. constant current sources, 23. constant current sources, 24. source tuning coils.
Detailed description of the invention
In FIG, antenna input (1) can be produced, such as mobile device, cell phone etc. by any suitable source.The RF signal that radio-frequency filter (2) is received, to eliminate the noise component(s) of the RF signal of any undesirable filter.In one embodiment, RF signal is in the frequency range of up to 4 to 6 gigahertzs (GHz).
Radio frequency attenuator (3) can improve the disposal ability of system counter high-power signal, just decayed by radio frequency attenuator (3) before high-power signal entrance system, differential inductance low-noise amplifier (4) carries out low noise amplification to signal, it provides enough gains, to reduce the noise generated in follow-up phase, it is simultaneously introduced the fewest noise input signal.The input coupling of differential inductance low-noise amplifier (4) is typically that 50 Ω are single-ended and 100 Ω difference.In the present embodiment, differential inductance low-noise amplifier (4) is a difference amplifier, for single-ended LNA, differential low noise amplifier is generally of good common mode inhibition and disturbs, and can perfectly eliminate second harmonic in theory.In this programme, differential inductance low-noise amplifier (4) be designed with differential inductance, using the teaching of the invention it is possible to provide efficiently silicon area utilization rate, reduce cost, and improve the inhibitory action of noise.
Specific image disturbing signal is suppressed by image-reject filter (5), in order to avoid the follow-up signal produced in downconversion process useful signal interference.Local oscillator (9) and radiofrequency signal are mixed by frequency mixer (6), produce the intermediate-freuqncy signal for signal processing.Channel select filter (7) filters out less desirable component of signal, retains desired signal component.
In the embodiment depicted in figure 2, radio frequency input negative terminal (12) is connected to the grid of the nmos device (13) of common source circuit, signal is converted into current signal, the source electrode of the nmos device (13) of common source circuit is connected to one end of source tuning coil (24), drain electrode is connected to the source electrode of the nmos device (15) of common gate amplifying circuit, is connected to one end of limit resonant inductance (16) simultaneously.The drain electrode of the nmos device (15) of common gate amplifying circuit is connected to one end of load resonant inductance (17), being connected to the grid of the nmos device (19) of source class follower circuit, the grid of nmos device (15) is connected to public power level terminal simultaneously.The drain electrode of the nmos device (19) of source class follower circuit is connected to common electrical source, the source electrode of the nmos device (19) of source class follower circuit is connected to radio frequency output plus terminal (21), is the most also connected to the input of constant current source (23).The other end of constant current source (23) is connected on public ground level end.
Radio frequency input anode (10) is connected to the grid of the nmos device (11) of common source circuit, and signal is converted into current signal.The source electrode of the nmos device (11) of common source circuit is connected to one end of source tuning coil (24), drain electrode is connected to the source electrode of the nmos device (14) of common gate amplifying circuit, is connected to one end of limit resonant inductance (16) simultaneously.The drain electrode of the nmos device (14) of common gate amplifying circuit is connected to one end of load resonant inductance (17), being connected to the grid of the nmos device (18) of source class follower circuit, the grid of nmos device (14) is connected to public power level terminal simultaneously.The drain electrode of the nmos device (18) of source class follower circuit is connected to common electrical source, the source electrode of the nmos device (18) of source class follower circuit is connected to radio frequency output negative terminal (20), is the most also connected to the input of constant current source (22).The other end of constant current source (22) is connected on public ground level end.
Source tuning coil (24) provides the ability of whole low-noise amplifier impedance matching, in one embodiment, the input resistance of this coupling is 100 Ω, one end of source tuning coil (24) receives the source electrode of the nmos device (11) of composition common source circuit, one end receives the source electrode of the nmos device (13) of composition common source circuit, and remaining two ends are connected on public ground level end.
Limit resonant inductance (16) provides whole low-noise amplifier to eliminate the ability of limit, and in one embodiment, the limit of elimination can improve the frequency response speed of total system, moreover it is possible to the interference outside the interested frequency bandwidth of suppression and noise signal.One end of limit resonant inductance (16) receives the drain electrode of the nmos device (11) of common source circuit, is also coupled to the source electrode of the nmos device (14) of common gate amplifying circuit simultaneously.The other end of limit resonant inductance (16) receives the drain electrode of the nmos device (13) of common source circuit, is also coupled to the source electrode of the nmos device (15) of common gate amplifying circuit simultaneously.
Claims (3)
1. a low-noise amplifier with differential configuration and limit elimination structure, it is possible to reduce the area of custom low noise amplifier,
And then the radio frequency reception improving chip manufacturing cost performance improves technology, it is characterized in that: use fully differential inductor design, tradition is low
Necessary 4 inductance of noise amplifier are reduced to 2 inductance, can also improve the whole system inhibitory action to second order interference simultaneously；
In order to improve the frequency response of total system, the invention allows for using the resonant inductance pole to cascade low-noise amplifier
The method that point carries out improving.
2., according to the low-noise amplifier described in claims 1, it is characterized in that: and use the single-ended low noise designed by inducer
Amplifier contrasts, and due to the symmetrical structure of differential inductor, produced differential inductance low-noise amplifier has more preferable common mode
Suppression is compared with less second-order distortion, meanwhile, low-noise amplifier based on differential inductance design, on inductance number, from
4 of traditional structure are reduced to 2, reduce half, thus significantly reduce cost on die area.
3., according to the low-noise amplifier described in claims 1, it is characterized in that: and common source and common grid amplifier dynode is not clicked on
The low-noise amplifier contrast that row eliminates, limit resonant inductance can reduce the produced impact of this limit so that overall frequency
Response becomes narrower, and quality factor are higher, and then improve frequency response, preferably suppression out-of-band noise and interference, thus reduces
The noise coefficient of whole system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510074817.8A CN105991093A (en) | 2015-02-11 | 2015-02-11 | Low noise amplifier having difference structure and pole elimination structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510074817.8A CN105991093A (en) | 2015-02-11 | 2015-02-11 | Low noise amplifier having difference structure and pole elimination structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107332523A (en) * | 2017-06-09 | 2017-11-07 | 中山大学 | A kind of power amplifier for suppressing backlash |
| CN108923752A (en) * | 2018-06-22 | 2018-11-30 | 东南大学 | A kind of broadband fully differential noise cancellation low-noise amplifier |
| WO2020000475A1 (en) * | 2018-06-30 | 2020-01-02 | 华为技术有限公司 | Single end slip differential amplifier and radio frequency receiver |
| CN110649901A (en) * | 2018-06-27 | 2020-01-03 | 陕西亚成微电子股份有限公司 | Full gallium nitride circuit |
| CN110649892A (en) * | 2018-06-27 | 2020-01-03 | 陕西亚成微电子股份有限公司 | Circuit with gallium nitride device |
| CN112671350A (en) * | 2020-12-28 | 2021-04-16 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
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2015
- 2015-02-11 CN CN201510074817.8A patent/CN105991093A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107332523A (en) * | 2017-06-09 | 2017-11-07 | 中山大学 | A kind of power amplifier for suppressing backlash |
| CN107332523B (en) * | 2017-06-09 | 2021-01-15 | 中山大学 | Power amplifier for inhibiting frequency pulling effect |
| CN108923752A (en) * | 2018-06-22 | 2018-11-30 | 东南大学 | A kind of broadband fully differential noise cancellation low-noise amplifier |
| CN110649901A (en) * | 2018-06-27 | 2020-01-03 | 陕西亚成微电子股份有限公司 | Full gallium nitride circuit |
| CN110649892A (en) * | 2018-06-27 | 2020-01-03 | 陕西亚成微电子股份有限公司 | Circuit with gallium nitride device |
| WO2020000475A1 (en) * | 2018-06-30 | 2020-01-02 | 华为技术有限公司 | Single end slip differential amplifier and radio frequency receiver |
| US11606069B2 (en) | 2018-06-30 | 2023-03-14 | Huawei Technologies Co., Ltd. | Single-ended-to-differential amplifier and radio frequency receiver |
| CN112671350A (en) * | 2020-12-28 | 2021-04-16 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
| CN112671350B (en) * | 2020-12-28 | 2022-01-04 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
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| DD01 | Delivery of document by public notice |
Addressee: Suzhou Xiaohu Electronics Technology Co., Ltd. Document name: Notification of Passing Preliminary Examination of the Application for Invention |
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161005 |