CN106803746B - Low-noise amplifier - Google Patents
Low-noise amplifier Download PDFInfo
- Publication number
- CN106803746B CN106803746B CN201611149378.3A CN201611149378A CN106803746B CN 106803746 B CN106803746 B CN 106803746B CN 201611149378 A CN201611149378 A CN 201611149378A CN 106803746 B CN106803746 B CN 106803746B
- Authority
- CN
- China
- Prior art keywords
- transistor
- resistor
- radio frequency
- noise amplifier
- coupling capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 230000008878 coupling Effects 0.000 claims abstract description 28
- 238000010168 coupling process Methods 0.000 claims abstract description 28
- 238000005859 coupling reaction Methods 0.000 claims abstract description 28
- 239000000126 substance Substances 0.000 claims description 2
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The present invention provides a low noise amplifier, comprising: one end of the equivalent radio frequency signal source is connected with one end of the equivalent radio frequency resistor; the other end of the equivalent radio frequency resistor is connected with one end of the first coupling capacitor; the other end of the first coupling capacitor, one end of the second coupling capacitor, the drain electrode of the first transistor and the drain electrode of the third transistor are connected to a node together, and the other end of the second coupling capacitor, one end of the feedback resistor and the grid electrode of the second transistor are connected to a node; the other end of the feedback resistor is connected to a second bias voltage; the grid electrode of the first transistor is connected with a first bias voltage, and the drain electrode of the first transistor is connected with the first differential signal output end and one end of the first load resistor; the drain electrode of the second transistor is connected with the second differential signal output end and one end of the second load resistor; the other end of the first load resistor and the other end of the second load resistor are connected to the anode of the power supply together; the gate of the third transistor is connected to the drain of the first transistor.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a low-noise amplifier.
Background
A Low Noise Amplifier (LNA) is one of the important modules in a radio frequency transceiver, and is mainly used for amplifying a signal received from an antenna in a communication system so as to facilitate processing by a receiver circuit at a later stage.
Since the signal from the antenna is typically very weak, the lna is typically located very close to the antenna to reduce signal loss. It is because the noise amplifier is located in the first stage of the whole receiver in the immediate vicinity of the antenna, and its characteristics directly affect the quality of the received signal of the whole receiver. To ensure that the signal received by the antenna is correctly recovered at the final stage of the receiver, a good low noise amplifier needs to amplify the signal while producing as little noise and distortion as possible.
With the development of modern mobile communication, the requirement of the low noise amplifier to be suitable for various frequencies and protocols has raised higher requirements on the inductance of the LNA, and particularly the requirement of the LNA to be variable, meets the requirements of various frequencies and protocols, thereby making the whole receiver a broadband receiver. Impedance matching and noise matching of the input terminal are key to achieving high gain and low noise, and the most critical to the influence of impedance matching and noise matching of the input terminal is the inductance of the LNA.
However, the inductor consumes more chip area, and therefore, a solution for the LNA without the inductor is to use a noise cancellation structure. Through the noise elimination structure LNA, good gain and noise can be obtained on the premise of not using an inductor. But for many protocols, the noise of such noise canceling LNAs is still unacceptable.
Disclosure of Invention
In order to overcome the above problems, the present invention aims to provide a low noise amplifier, thereby effectively reducing broadband noise.
In order to achieve the above object, the present invention provides a low noise amplifier including: the radio frequency signal source comprises a first transistor, a second transistor, a third transistor, a first load resistor, a second load resistor, a feedback resistor, an equivalent radio frequency resistor, a first coupling capacitor, a second coupling capacitor, an equivalent radio frequency signal source, a first differential signal output end, a second differential signal output end, a power supply, a first bias voltage end and a second bias voltage end; wherein the content of the first and second substances,
one end of the equivalent radio frequency signal source is connected with one end of the equivalent radio frequency resistor, and signals are input through the equivalent radio frequency resistor; the other end of the equivalent radio frequency signal source is grounded;
the other end of the equivalent radio frequency resistor is connected with one end of the first coupling capacitor; the other end of the first coupling capacitor, one end of the second coupling capacitor, the drain electrode of the first transistor and the drain electrode of the third transistor are connected to a node together, and the other end of the second coupling capacitor, one end of the feedback resistor and the grid electrode of the second transistor are connected to a node;
the other end of the feedback resistor is connected to a second bias voltage;
the grid electrode of the first transistor is connected with a first bias voltage, and the drain electrode of the first transistor is connected with the first differential signal output end and also connected with one end of the first load resistor;
the source electrode of the second transistor is grounded, and the drain electrode of the second transistor is connected with the second differential signal output end and also connected with one end of the second load resistor;
the other end of the first load resistor and the other end of the second load resistor are connected to the anode of the power supply together;
the grid electrode of the third transistor is connected with the drain electrode of the first transistor, and the source electrode of the third transistor is grounded.
Preferably, the first transistor, the second transistor, and the third transistor are all NMOS transistors.
Preferably, the equivalent radio frequency resistance is 30-75 ohms.
Preferably, the radio frequency range of the equivalent radio frequency signal source is 50 MHz-5.5 GHz.
Preferably, the first load resistance is 3-10 kilo-ohms.
Preferably, the second load resistance is 3-10 kilo-ohms.
Preferably, the feedback resistance is 1-5 kilo-ohms.
Preferably, the range of the first coupling capacitor is 2-20 pF, and the range of the second coupling capacitor is 2-20 pF.
In the low noise amplifier, the third transistor is a feedback transistor and is also a common source amplification structure, and an input signal is amplified by the first transistor, then is output by the drain electrode of the first transistor, and is fed back to the drain electrode of the first transistor through the grid electrode of the third transistor to form a feedback structure.
Drawings
FIG. 1 is a schematic circuit diagram of a low noise amplifier according to a preferred embodiment of the present invention
FIG. 2 is a graph of input matching of a LNA in accordance with a preferred embodiment of the present invention
FIG. 3 is a gain curve diagram of a low noise amplifier according to a preferred embodiment of the present invention
FIG. 4 is a graph of the noise figure of the LNA in accordance with one embodiment of the present invention
Detailed Description
In order to make the contents of the present invention more comprehensible, the present invention is further described below with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
The present invention will be described in further detail with reference to the accompanying drawings 1 to 4 and specific embodiments. It should be noted that the drawings are in a simplified form and are not to precise scale, and are only used for conveniently and clearly achieving the purpose of assisting in describing the embodiment.
Referring to fig. 1, a low noise amplifier of the present embodiment includes: a first transistor M1, a second transistor M2, a third transistor M3, a first load resistor R1, a second load resistor R2, and a feedback resistor RFEquivalent radio frequency resistance RSA first coupling capacitor C1, a second coupling capacitor C2, and an equivalent RF signal source VSA first differential signal output terminalVout _ p, a second differential signal output terminal Vout _ n, a power supply, a first bias voltage terminal VB1 and a second bias voltage terminal VB 2. In this embodiment, the first transistor M1, the second transistor M2, and the third transistor M3 are all NMOS transistors.
In particular, an equivalent RF signal source VSOne end of (1) and an equivalent radio frequency resistor RSIs connected through an equivalent radio frequency resistor RSInputting a signal; the other end of the equivalent radio frequency signal source is grounded. The radio frequency range of the equivalent radio frequency signal source can be 50 MHz-5.5 GHz.
The other end of the equivalent radio frequency resistor is connected with one end of the first coupling capacitor; the other end of the first coupling capacitor, one end of the second coupling capacitor, the drain of the first transistor and the drain of the third transistor are connected to a node together, and the other end of the second coupling capacitor, one end of the feedback resistor and the grid of the second transistor are connected to a node. The other end of the feedback resistor is connected to a second bias voltage. Here, the equivalent rf resistance may be 30 to 75 ohms, preferably 50 ohms; the range of the first coupling capacitor can be 2 to 20pF, preferably 5pF, and the range of the second coupling capacitor can be 2 to 20pF, preferably 5 pF.
The grid electrode of the first transistor is connected with a first bias voltage, and the drain electrode of the first transistor is connected with the first differential signal output end and also connected with one end of the first load resistor; the source of the second transistor is grounded, and the drain of the second transistor is connected to the second differential signal output terminal and also connected to one end of the second load resistor. The grid electrode of the third transistor is connected with the drain electrode of the first transistor, and the source electrode of the third transistor is grounded.
The other end of the first load resistor and the other end of the second load resistor are connected to the anode of the power supply in common. The first load resistor may be 3 to 10 kohms, preferably 5 kohms, the second load resistor may be 3 to 10 kohms, preferably 5 kohms, and the feedback resistor may be 1 to 5 kohms, preferably 2.5 kohms.
Hereinafter, the principle of the low noise amplifier of the present embodiment will be described in detail.
In the low noise amplifier of this embodiment, an equivalent rf signal is input through the equivalent rf signal, and the signal passing through the two branches of the first transistor M1 and the second transistor M2 is amplified, and finally converted into a differential signal, which is output by the first differential signal output terminal Vout _ p and the second differential signal output terminal Vout _ n. Therefore, the low noise amplifier herein operates in a single-ended to differential process.
The low noise amplifier of this embodiment adopts the third transistor M3 as a feedback transistor, and is also a common source amplification structure, the first transistor M1 is used as a common gate amplifier tube, the rf input signal is input through the drain of the third transistor M3, and is output from the drain of the first transistor M1 after being amplified by the first transistor M1, on the other hand, the rf input signal is fed back to the drain of the first transistor M1 through the gate of the third transistor M3, thereby forming a feedback structure.
Since the third transistor M3 is not in the amplification branch, the voltage gain of the low noise amplifier is not affected. However, since the third transistor M3 acts on the first transistor M1 in a feedback manner, the transconductance (gm) value of the first transistor M1 is changed, so that the current of the branch where the first transistor M1 is located becomes smaller, and the voltage drop is also reduced, so that the voltage drop across the first load resistor R1 is smaller, and therefore, in order to obtain a higher gain, since the gain is positively correlated with the first load resistor R1, the impedance of the first load resistor R1 can be properly increased, so that the low noise amplifier can obtain a larger gain, and the current of the branch of the first transistor M1 cannot be affected, so that the noise coefficient cannot be affected.
According to the circuit equivalent calculation, the input impedance matching Zin of the low-noise amplifier, new is as follows:
where Zin is the input impedance of the conventional noise canceling low noise amplifier, gm3 is the transconductance of the third transistor M3, and R1 is the first load resistor.
Since the third transistor M3 is used as the feedback transistor, the noise figure NF of the low noise amplifier can be calculated as:
the equivalent radio frequency resistor Rs is matched with 50 ohms, and Gain is the Gain of the low noise amplifier.
Fig. 2 shows an input matching curve S11 of the low noise amplifier of the present embodiment. As can be seen from FIG. 2, the noise-canceling low-noise amplifier has a good broadband characteristic, and the whole frequency range can cover an ultra-wide frequency range of 10MHz to 8 GHz. This range of frequencies can meet the requirements of most protocols for low noise amplifiers.
Fig. 3 shows a gain curve S21 of the low noise amplifier of the present embodiment. As can be seen from fig. 3, the peak gain of the low noise amplifier is 20.9dB, and the peak gain frequency is 291 MHz. The gain of the low noise amplifier was 19.7dB at the low frequency band (10 MHz) and 18.2dB at the high frequency band (8 GHz). These gain ranges may satisfy most protocol requirements for low noise amplifiers.
Fig. 4 is a graph showing the noise figure of the low noise amplifier of the present embodiment. As can be seen from FIG. 4, the minimum value of the noise of the low noise amplifier is 1.4dB, the frequency of the minimum value is 315MHz, the noise coefficients of the low noise amplifier are all less than 1.5dB in the range of 77MHz to 1.8GHz, and the noise level is also better for the noise-canceling low noise amplifier. The noise of the low noise amplifier in the working frequency range (10 MHz-8 GHz) is less than 4.0 dB.
Although the present invention has been described with reference to preferred embodiments, it is to be understood that the present invention is not limited to the disclosed embodiments, but rather, may be embodied in many different forms and modifications without departing from the spirit and scope of the present invention as defined by the appended claims.
Claims (7)
1. A low noise amplifier, comprising: the radio frequency signal source comprises a first transistor, a second transistor, a third transistor, a first load resistor, a second load resistor, a feedback resistor, an equivalent radio frequency resistor, a first coupling capacitor, a second coupling capacitor, an equivalent radio frequency signal source, a first differential signal output end, a second differential signal output end, a power supply, a first bias voltage end and a second bias voltage end; wherein the content of the first and second substances,
one end of the equivalent radio frequency signal source is connected with one end of the equivalent radio frequency resistor, and signals are input through the equivalent radio frequency resistor; the other end of the equivalent radio frequency signal source is grounded;
the other end of the equivalent radio frequency resistor is connected with one end of the first coupling capacitor; the other end of the first coupling capacitor, one end of the second coupling capacitor, the drain electrode of the first transistor and the drain electrode of the third transistor are connected to a node together, and the other end of the second coupling capacitor, one end of the feedback resistor and the grid electrode of the second transistor are connected to a node;
the other end of the feedback resistor is connected to a second bias voltage;
the grid electrode of the first transistor is connected with a first bias voltage, and the drain electrode of the first transistor is connected with the first differential signal output end and also connected with one end of the first load resistor;
the source electrode of the second transistor is grounded, and the drain electrode of the second transistor is connected with the second differential signal output end and also connected with one end of the second load resistor;
the other end of the first load resistor and the other end of the second load resistor are connected to the anode of the power supply together;
the grid electrode of the third transistor is connected with the drain electrode of the first transistor, and the source electrode of the third transistor is grounded; wherein the first transistor, the second transistor, and the third transistor are all NMOS transistors.
2. The low noise amplifier of claim 1, wherein the equivalent radio frequency resistance is 30-75 ohms.
3. The low noise amplifier of claim 1, wherein the equivalent rf signal source has a rf range of 50MHz to 5.5 GHz.
4. The low noise amplifier of claim 1, wherein the first load resistance is 3-10 kilo ohms.
5. The low noise amplifier of claim 1, wherein the second load resistance is 3-10 kilo ohms.
6. The low noise amplifier of claim 1, wherein the feedback resistance is 1-5 kilo ohms.
7. The low noise amplifier of claim 1, wherein the first coupling capacitor is in a range of 2-20 pF, and the second coupling capacitor is in a range of 2-20 pF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611149378.3A CN106803746B (en) | 2016-12-14 | 2016-12-14 | Low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611149378.3A CN106803746B (en) | 2016-12-14 | 2016-12-14 | Low-noise amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106803746A CN106803746A (en) | 2017-06-06 |
| CN106803746B true CN106803746B (en) | 2020-09-04 |
Family
ID=58984920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611149378.3A Active CN106803746B (en) | 2016-12-14 | 2016-12-14 | Low-noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106803746B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI643449B (en) * | 2018-04-27 | 2018-12-01 | 立積電子股份有限公司 | Amplifier |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101282110A (en) * | 2008-04-25 | 2008-10-08 | 北京大学 | Low-power consumption single-ended input difference output low-noise amplifier |
| CN101777877A (en) * | 2010-01-05 | 2010-07-14 | 南京广嘉微电子有限公司 | Wide band radio-frequency low noise amplifier with single-ended input and differential output |
| CN101807883A (en) * | 2010-04-08 | 2010-08-18 | 复旦大学 | Single-ended input and differential output low-noise amplifier applied in UWB system |
| TW201228217A (en) * | 2010-12-17 | 2012-07-01 | Ind Tech Res Inst | Method and apparatus for canceling balun amplifier noise |
| CN103095222A (en) * | 2012-12-11 | 2013-05-08 | 中国科学技术大学 | Active Balun with mismatch compensation technology |
| CN105071780A (en) * | 2015-08-25 | 2015-11-18 | 上海集成电路研发中心有限公司 | Broadband low noise amplifier with output to input feedback |
| CN105830341A (en) * | 2013-12-19 | 2016-08-03 | 高通股份有限公司 | Distortion cancellation for low noise amplifier (lna) non-linear second order products |
-
2016
- 2016-12-14 CN CN201611149378.3A patent/CN106803746B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101282110A (en) * | 2008-04-25 | 2008-10-08 | 北京大学 | Low-power consumption single-ended input difference output low-noise amplifier |
| CN101777877A (en) * | 2010-01-05 | 2010-07-14 | 南京广嘉微电子有限公司 | Wide band radio-frequency low noise amplifier with single-ended input and differential output |
| CN101807883A (en) * | 2010-04-08 | 2010-08-18 | 复旦大学 | Single-ended input and differential output low-noise amplifier applied in UWB system |
| TW201228217A (en) * | 2010-12-17 | 2012-07-01 | Ind Tech Res Inst | Method and apparatus for canceling balun amplifier noise |
| CN103095222A (en) * | 2012-12-11 | 2013-05-08 | 中国科学技术大学 | Active Balun with mismatch compensation technology |
| CN105830341A (en) * | 2013-12-19 | 2016-08-03 | 高通股份有限公司 | Distortion cancellation for low noise amplifier (lna) non-linear second order products |
| CN105071780A (en) * | 2015-08-25 | 2015-11-18 | 上海集成电路研发中心有限公司 | Broadband low noise amplifier with output to input feedback |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106803746A (en) | 2017-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8570106B2 (en) | Positive feedback common gate low noise amplifier | |
| CN103117711B (en) | Monolithic integrated radio frequency high-gain low-noise amplifier | |
| CN107592081A (en) | A kind of ultra wide band monolithic microwave integrated low-noise amplifier | |
| CN107565912B (en) | Low-noise amplifier circuit with interference suppression | |
| CN107248850B (en) | Non-inductance low-power-consumption high-gain high-linearity broadband low-noise amplifier | |
| CN106230389B (en) | High gain low noise amplifier | |
| CN109167578B (en) | Ultra-wideband low-noise amplifier with active inductor | |
| CN216390924U (en) | Low-noise amplifier and radio frequency chip of ultra-wideband communication standard | |
| CN111740705A (en) | Low-noise amplifier for eliminating nonlinearity | |
| CN112202408A (en) | Cascode radio frequency amplifier of GaN technology | |
| CN107733375A (en) | Ultra-wideband low-noise amplifier | |
| CN110138345A (en) | A kind of wideband amplification circuit | |
| CN116131770A (en) | High-integration-level high-linearity low-noise amplifier | |
| CN111478671A (en) | Novel low-noise amplifier applied to Sub-GHz frequency band | |
| CN109391236B (en) | Signal amplification circuit and millimeter wave signal amplification circuit | |
| CN106803746B (en) | Low-noise amplifier | |
| CN105071780A (en) | Broadband low noise amplifier with output to input feedback | |
| KR101123211B1 (en) | Low noise amplifier and radio receiver | |
| CN104158504B (en) | A kind of wideband low noise amplifier | |
| CN103973233A (en) | Low-noise amplifier based on differential structure active inductor | |
| CN103475314B (en) | low-noise amplifier | |
| CN106788324B (en) | Loop feedback active resistor | |
| US11323080B2 (en) | Amplification circuit, radio-frequency front end circuit, and communication device | |
| CN206077339U (en) | high-gain low-noise amplifier | |
| CN107040225B (en) | Low-noise amplifier and control method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |