CN106230389B - High gain low noise amplifier - Google Patents
High gain low noise amplifier Download PDFInfo
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- CN106230389B CN106230389B CN201610856014.2A CN201610856014A CN106230389B CN 106230389 B CN106230389 B CN 106230389B CN 201610856014 A CN201610856014 A CN 201610856014A CN 106230389 B CN106230389 B CN 106230389B
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- noise amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
Abstract
The invention relates to a high-gain low-noise amplifier, which is characterized in that: comprising 2 pairs of complementary structure amplifiers in differential form; the input end of the amplifier is connected with the grid electrodes of the NMOS and PMOS amplifying tubes of one pole of complementary amplifier through an alternating current coupling capacitor, and is connected with the source electrodes of the NMOS and PMOS amplifying tubes of the other pole of complementary amplifier. The drain electrodes of the NMOS amplifying tube and the PMOS amplifying tube are connected, and the drain electrodes are used as one output end of the amplifier, the grid electrodes are respectively connected with two input coupling capacitors, and the other polar plates of the input coupling capacitors are connected together and used as one input end of the amplifier. The source electrode of the NMOS amplifying tube is connected with the bias tail current, the source electrode of the PMOS amplifying tube is connected with the bias PMOS tube, the grid voltage of the bias tube is provided by the output of the common mode feedback circuit, the source electrodes of the NMOS amplifying tube and the PMOS amplifying tube are respectively connected with two input coupling capacitors, and the other poles of the two capacitors are connected together and serve as the other input end of the amplifier. The low noise amplifier can effectively enhance the gain and is easy to realize input matching.
Description
Technical Field
The invention relates to a high-gain low-noise amplifier, in particular to a low-noise amplifier with high gain and easy input matching, belonging to the technical field of integrated circuit design.
Background
The signal received by the rf receiver is usually very weak and many are below-100 dBm, so the first stage of the receiver needs to amplify the weak signal, which requires the first stage amplifying circuit to have high gain and low noise, and the influence of the noise of the subsequent stage on the signal is reduced while amplifying the received signal, so the first stage of the receiver is usually implemented by using a Low Noise Amplifier (LNA).
For a cascade system, the overall noise performance depends on the noise performance and gain of the preceding subsystem, and the smaller the noise coefficient of the preceding subsystem is, the larger the gain is, and the better the overall noise performance of the cascade system is. The influence of the first stage subsystem is the greatest, and the overall noise performance of the radio frequency receiver mainly depends on the noise coefficient and the gain of the first stage low noise amplifier. Therefore, the low noise amplifier should have a high gain under the condition of satisfying low noise.
Meanwhile, the low noise amplifier is usually required to be connected with an off-chip element, such as an active antenna, SAW filter, balun, etc., directly as a load or output to drive the off-chip element. Thus, the input needs to be impedance matched to achieve an input impedance of 50Ω.
The matching does not directly affect the noise performance of the LNA, but from a signal power transfer perspective, the matching situation has a large impact on the overall noise performance. When the impedance is not matched, the transmission power is reflected and increased, the attenuation in the passband is increased, and the receiving sensitivity is reduced; the out-of-band rejection is reduced, the capability of filtering interference signals is reduced, and the linearity of the system is affected.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a high-gain low-noise amplifier which can effectively enhance gain, is easy to realize input matching, has a simple and universal structure and is convenient to realize.
According to the technical scheme provided by the invention, the high-gain low-noise amplifier is characterized in that: a first pair of amplifiers and a second pair of amplifiers including a pair complementary structure in a differential form, the first pair of amplifiers including a first amplifying tube NM1 and a second amplifying tube NM2, the second pair of amplifiers including a third amplifying tube PM1 and a fourth amplifying tube PM2;
the input end VIP of the low noise amplifier is connected with the grid electrodes of the first amplifying tube NM1 and the third amplifying tube PM1 and the source electrodes of the second amplifying tube NM2 and the fourth amplifying tube PM2 through an input coupling capacitor, and the input end VIN of the low noise amplifier is connected with the source electrodes of the first amplifying tube NM1 and the third amplifying tube PM1 and the grid electrodes of the second amplifying tube NM2 and the fourth amplifying tube PM2 through the input coupling capacitor;
the drain electrode of the first amplifying tube NM1 is connected with the drain electrode of the third amplifying tube PM1 and is used as an output end VON; the drain electrode of the second amplifying tube NM2 is connected with the drain electrode of the fourth amplifying tube PM2 and is used as an output end VOP;
the source electrode of the first amplifying tube NM1 is connected with a first bias current IB1, and the source electrode of the second amplifying tube NM2 is connected with a second bias current IB2; the source of the third amplifying tube PM1 is connected with the drain of the first current mirror PM3, and the source of the fourth amplifying tube PM2 is connected with the drain of the second current mirror PM4.
Further, the drain electrode of the first amplifying tube NM1 and the drain electrode of the third amplifying tube PM1 are connected to one end of the first load resistor RL1, the drain electrode of the second amplifying tube NM2 and the drain electrode of the fourth amplifying tube PM2 are connected to one end of the second load resistor RL2, the other ends of the first load resistor RL1 and the second load resistor RL2 are connected and serve as common mode voltages to be input to the positive input end of the common mode feedback circuit, the negative input end of the common mode feedback circuit is connected to the reference voltage VREF, and the output end of the common mode feedback circuit is connected to the gates of the first current mirror PM3 and the second current mirror PM4.
Further, the drain electrode of the first amplifying tube NM1 is connected to the drain electrode of the third amplifying tube PM1, and is connected to one pole of the first output coupling capacitor CL1, where the other pole of the first output coupling capacitor CL1 is used as the negative output end VON of the low noise amplifier; the drain electrode of the second amplifying tube NM2 is connected with the drain electrode of the fourth amplifying tube PM2, and is connected to one pole of the second output coupling capacitor CL2, and the other pole of the second output coupling capacitor CL2 is used as a positive output end VOP of the low noise amplifier.
Further, the gates of the first amplifying tube NM1 and the second amplifying tube NM2 are connected to the bias voltage VBN through a first bias resistor RB1 and a second bias resistor RB2, respectively, and the gates of the third amplifying tube PM1 and the fourth amplifying tube PM2 are connected to the bias voltage VBP through a third bias resistor RB3 and a fourth bias resistor RB4, respectively.
Further, the direct current working current provided by the first current mirror PM3 and the second current mirror PM4 has a magnitude IB, and the first bias current ib1=the second bias current ib2=ib.
Further, the first amplifying tube NM1 and the second amplifying tube NM2 are NMOS amplifying tubes, and the third amplifying tube PM1 and the fourth amplifying tube PM4 are PMOS amplifying tubes.
The high-gain low-noise amplifier can effectively enhance gain, is easy to realize input matching, and is suitable for a general CMOS process.
Drawings
Fig. 1 is a block diagram of a receiver system in which a high gain low noise amplifier according to the present invention is located.
Fig. 2 is a circuit diagram of a differential structure of a low noise amplifier according to an embodiment of the present invention.
FIG. 3 is a schematic diagram of a common mode feedback circuit according to an embodiment of the invention.
Description of the embodiments
The invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, the receiver system with the low noise amplifier is a block diagram of a structure of the receiver system, which includes an antenna 11, a surface acoustic wave filter 12, a single-ended/differential converter (Balun) 13, and a receiver radio frequency analog front end 14, wherein the receiver radio frequency analog front end 14 includes a low noise amplifier 141, a first mixer 142, a second mixer 143, a 90 ° phase shift circuit 144, a local oscillator generating circuit 145, an analog baseband 146, the 90 ° phase shift circuit 144, and the local oscillator generating circuit 145 form a frequency synthesizer. The working principle is as follows: the system receives a radio frequency small signal through an antenna 11, filters noise outside a channel through a surface acoustic wave filter 12, converts the noise into a differential signal through a single-ended/differential converter 13, inputs the differential signal into a low noise amplifier 141 for amplification, and performs down-conversion on the amplified signal and a quadrature local oscillation signal through a mixer to convert the signal into an intermediate frequency signal or a fundamental frequency signal, and the signal is processed through an analog baseband 146 and then converted into a digital signal for processing. A Low Noise Amplifier (LNA) 141 is located at the very front of the receiver, isolates the noise of the later stages and amplifies the received signal.
As shown in fig. 2, the high-gain low-noise amplifier according to the present invention mainly includes a first amplifying tube NM1, a second amplifying tube NM2, a third amplifying tube PM1, a fourth amplifying tube PM2, a first input coupling capacitor C1, a second input coupling capacitor C2, a third input coupling capacitor C3, a fourth input coupling capacitor C4, a fifth input coupling capacitor C5, a sixth input coupling capacitor C6, a seventh input coupling capacitor C7, an eighth input coupling capacitor C8, a first output coupling capacitor CL1, a second output coupling capacitor CL2, a first load resistor RL1, a second load resistor RL2, a first bias resistor RB1, a second bias resistor RB2, a third bias resistor RB3, a fourth bias resistor RB4, a first bias current IB1, a second bias current IB2, a first current mirror PM3, and a second current mirror PM4. Specifically:
the drain electrode of the first amplifying tube NM1 is connected with the drain electrode of the third amplifying tube PM1 and is connected to one pole of a first output coupling capacitor CL1, and the other pole of the first output coupling capacitor CL1 is used as a negative output end VON of the low-noise amplifier; the drain electrode of the second amplifying tube NM2 is connected with the drain electrode of the fourth amplifying tube PM2 and is connected to one pole of a second output coupling capacitor CL2, and the other pole of the second output coupling capacitor CL2 is used as a positive output end VOP of the low-noise amplifier;
meanwhile, the drain electrode of the first amplifying tube NM1 and the drain electrode of the third amplifying tube PM1 are connected with one end of a first load resistor RL1, the drain electrode of the second amplifying tube NM2 and the drain electrode of the fourth amplifying tube PM2 are connected with one end of a second load resistor RL2, the other ends of the first load resistor RL1 and the second load resistor RL2 are connected and serve as common mode voltages to be input to the positive input end of a common mode feedback circuit CMFB, the negative input end of the common mode feedback circuit CMFB is connected with a reference voltage VREF, and the output end of the common mode feedback circuit CMFB is connected to the grid electrodes of a first current mirror PM3 and a second current mirror PM4 to provide bias voltages;
the dc operating current of the first amplifying tube NM1 is provided by the first bias current IB1 of the source, the dc operating current of the second amplifying tube NM2 is provided by the second bias current IB2 of the source, the first bias current ib1=the second bias current ib2=ib, the dc operating current of the third amplifying tube PM1 and the fourth amplifying tube PM2 is provided by the first current mirror PM3 and the second current mirror PM4, the magnitude is IB;
the gates of the first and second amplifying tubes NM1 and NM2 are connected to the bias voltage VBN through the first and second bias resistors RB1 and RB2, respectively, and the gates of the third and fourth amplifying tubes PM1 and PM2 are connected to the bias voltage VBP through the third and fourth bias resistors RB3 and RB4, respectively.
The first amplifying tube NM1 and the second amplifying tube NM2 are NMOS amplifying tubes, and the third amplifying tube PM1 and the fourth amplifying tube PM2 are PMOS amplifying tubes.
The low noise amplifier adopts a complementary structure, namely the drains of the NMOS amplifying tube and the PMOS amplifying tube are connected, so that the transconductance addition is realized, and compared with the amplification of a single NMOS tube or the amplification of a single PMOS tube, the gain is improved.
The low noise amplifier has the advantages that the input end VIP of one pole of the low noise amplifier is used as the grid input of the complementary structure amplifier through the coupling capacitor, so that the function of the common source structure amplifier is realized; the other input end VIN is respectively input to the sources of the NMOS amplifying tube and the PMOS amplifying tube through the coupling capacitor, so that the function of the common gate structure amplifier is realized. Therefore, the low-noise amplifier realizes the gain superposition of the common-source structure amplifier and the common-gate structure amplifier, effectively improves the gain, and simultaneously has the advantage of easy input matching, and the resistance part of the equivalent input impedance of the low-noise amplifier is about, wherein gmn is the transconductance value of NMOS amplifying tubes NM1 and NM2, and gmp is the transconductance value of PMOS amplifying tubes PM1 and PM2;
in order to ensure that the bias currents of the NMOS amplifying tube and the PMOS amplifying tube are equal, the grid voltage of the current bias tube of the PMOS amplifying tube is provided by the output of the common mode feedback circuit, and meanwhile, the direct current output voltage of the low noise amplifier is fixed, so that the amplifying tube works in a saturation region and a reasonable margin is reserved.
As shown in fig. 2, the low noise amplifier of the present invention adopts a differential structure, so as to effectively suppress the influence of common mode noise, and the equivalent transconductance of the amplifier can be approximately expressed as:by adjusting transistor parameters, the methodWherein g mn Transconductance g of NMOS amplifying tube mp As compared with the transconductance of the PMOS amplifying tube, the transconductance of the PMOS amplifying tube is calculated according to a calculation formulaThe low noise amplifier can improve the power gain by about 6 dB; the real part of the equivalent input impedance, i.e. the resistance, of the low noise amplifier is approximately: />The imaginary part is the capacitive reactance generated by the parasitic capacitance, and the parasitic inductance generated by the encapsulation gold wire is usually resonated, so that the input impedance matching of the low-noise amplifier can be realized by adjusting the transconductance value of the amplifying tube, and the complexity of an off-chip matching network is reduced.
As shown in fig. 3, an exemplary embodiment of the common mode feedback circuit in the low noise amplifier according to the present invention is shown. The common mode feedback circuit comprises a fifth amplifying tube PM5, a sixth amplifying tube PM6, a seventh amplifying tube NM3, an eighth amplifying tube NM4, a capacitor C5 and a current source IB3, wherein the source electrode of the fifth amplifying tube PM5 is connected with a power supply, the grid electrode of the fifth amplifying tube PM5 is connected with the grid electrode of the sixth amplifying tube PM6 and the drain electrode of the fifth amplifying tube PM5, the drain electrode of the fifth amplifying tube PM5 is connected with the drain electrode of the seventh amplifying tube NM3, the source electrode of the seventh amplifying tube NM3 is connected with the inflow end of the current source IB3, the outflow end of the current source IB3 is connected with a signal ground, the source electrode of the sixth amplifying tube PM6 is connected with the power supply, the drain electrode of the sixth amplifying tube PM6 is connected with the inflow end of the current source IB3, one end of the capacitor C5 is connected with the power supply, and the other end of the capacitor C5 is connected with the drain electrode of the sixth amplifying tube PM 6.
Claims (4)
1. A high gain low noise amplifier is characterized in that: a first pair of amplifiers and a second pair of amplifiers including a pair complementary structure in a differential form, the first pair of amplifiers including a first amplifying tube NM1 and a second amplifying tube NM2, the second pair of amplifiers including a third amplifying tube PM1 and a fourth amplifying tube PM2;
the input end VIP of the low noise amplifier is connected with the grid electrodes of the first amplifying tube NM1 and the third amplifying tube PM1 and the source electrodes of the second amplifying tube NM2 and the fourth amplifying tube PM2 through an input coupling capacitor, and the input end VIN of the low noise amplifier is connected with the source electrodes of the first amplifying tube NM1 and the third amplifying tube PM1 and the grid electrodes of the second amplifying tube NM2 and the fourth amplifying tube PM2 through the input coupling capacitor;
the drain electrode of the first amplifying tube NM1 is connected with the drain electrode of the third amplifying tube PM1 and is used as an output end VON; the drain electrode of the second amplifying tube NM2 is connected with the drain electrode of the fourth amplifying tube PM2 and is used as an output end VOP;
the source electrode of the first amplifying tube NM1 is connected with a first bias current IB1, and the source electrode of the second amplifying tube NM2 is connected with a second bias current IB2; the source electrode of the third amplifying tube PM1 is connected with the drain electrode of the first current mirror PM3, and the source electrode of the fourth amplifying tube PM2 is connected with the drain electrode of the second current mirror PM 4; the equivalent transconductance of the amplifier is expressed as:by adjusting the transistor parameters, let +.>Wherein g mn Transconductance g of NMOS amplifying tube mp The transconductance of the PMOS amplifying tube is the real part of the equivalent input impedance of the low-noise amplifier, namely the resistance is: />The imaginary part is the capacitive reactance generated by the parasitic capacitance;
the common mode feedback circuit comprises a fifth amplifying tube PM5, a sixth amplifying tube PM6, a seventh amplifying tube NM3, an eighth amplifying tube NM4, a capacitor C5 and a current source IB3, wherein the source electrode of the fifth amplifying tube PM5 is connected with a power supply, the grid electrode of the fifth amplifying tube PM5 is connected with the grid electrode of the sixth amplifying tube PM6 and the drain electrode of the fifth amplifying tube PM5, the drain electrode of the fifth amplifying tube PM5 is connected with the drain electrode of the seventh amplifying tube NM3, the source electrode of the seventh amplifying tube NM3 is connected with the inflow end of the current source IB3, the outflow end of the current source IB3 is connected with a signal ground, the source electrode of the sixth amplifying tube PM6 is connected with the power supply, the drain electrode of the sixth amplifying tube PM6 is connected with the drain electrode of the eighth amplifying tube NM4, the source electrode of the eighth amplifying tube NM4 is connected with the inflow end of the current source IB3, one end of the capacitor C5 is connected with the power supply, and the other end of the capacitor C5 is connected with the drain electrode of the sixth amplifying tube PM 6;
the drain electrode of the first amplifying tube NM1 and the drain electrode of the third amplifying tube PM1 are connected with one end of a first load resistor RL1, the drain electrode of the second amplifying tube NM2 and the drain electrode of the fourth amplifying tube PM2 are connected with one end of a second load resistor RL2, the other ends of the first load resistor RL1 and the second load resistor RL2 are connected and serve as common mode voltages to be input to the positive input end of a common mode feedback circuit, the negative input end of the common mode feedback circuit is connected with a reference voltage VREF, and the output end of the common mode feedback circuit is connected to the grid electrodes of a first current mirror PM3 and a second current mirror PM 4;
the direct current working current provided by the first current mirror PM3 and the second current mirror PM4 has a magnitude IB, and the first bias current ib1=the second bias current ib2=ib.
2. The high gain low noise amplifier of claim 1, wherein: the drain electrode of the first amplifying tube NM1 is connected with the drain electrode of the third amplifying tube PM1 and is connected to one pole of a first output coupling capacitor CL1, and the other pole of the first output coupling capacitor CL1 is used as a negative output end VON of the low-noise amplifier; the drain electrode of the second amplifying tube NM2 is connected with the drain electrode of the fourth amplifying tube PM2, and is connected to one pole of the second output coupling capacitor CL2, and the other pole of the second output coupling capacitor CL2 is used as a positive output end VOP of the low noise amplifier.
3. The high gain low noise amplifier of claim 1, wherein: the gates of the first amplifying tube NM1 and the second amplifying tube NM2 are connected to the bias voltage VBN through a first bias resistor RB1 and a second bias resistor RB2, respectively, and the gates of the third amplifying tube PM1 and the fourth amplifying tube PM2 are connected to the bias voltage VBP through a third bias resistor RB3 and a fourth bias resistor RB4, respectively.
4. The high gain low noise amplifier of claim 1, wherein: the first amplifying tube NM1 and the second amplifying tube NM2 are NMOS amplifying tubes, and the third amplifying tube PM1 and the fourth amplifying tube PM4 are PMOS amplifying tubes.
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| CN201610856014.2A CN106230389B (en) | 2016-09-27 | 2016-09-27 | High gain low noise amplifier |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107248850B (en) * | 2017-04-24 | 2020-06-16 | 东南大学 | Non-inductance low-power-consumption high-gain high-linearity broadband low-noise amplifier |
| CN107493077A (en) * | 2017-09-01 | 2017-12-19 | 无锡泽太微电子有限公司 | A kind of wideband low noise amplifier circuit of Low-voltage Low-power |
| US10404265B1 (en) * | 2018-08-30 | 2019-09-03 | Xilinx, Inc. | Current-mode feedback source follower with enhanced linearity |
| CN109889165B (en) * | 2019-02-01 | 2023-01-03 | 东南大学 | Amplifier with adjustable output common-mode voltage |
| CN111224683B (en) * | 2019-12-30 | 2022-03-11 | 北斗航天卫星应用科技集团有限公司 | Low-noise large dynamic radio frequency receiving channel |
| TWI792903B (en) * | 2022-01-28 | 2023-02-11 | 瑞昱半導體股份有限公司 | Amplifier and method for controlling common mode voltage of the same |
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