CN106230389A - high-gain low-noise amplifier - Google Patents
high-gain low-noise amplifier Download PDFInfo
- Publication number
- CN106230389A CN106230389A CN201610856014.2A CN201610856014A CN106230389A CN 106230389 A CN106230389 A CN 106230389A CN 201610856014 A CN201610856014 A CN 201610856014A CN 106230389 A CN106230389 A CN 106230389A
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- Prior art keywords
- amplifier
- amplifier tube
- tube
- drain electrode
- noise
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
Abstract
The present invention relates to a kind of high-gain low-noise amplifier, it is characterized in that: include 2 pairs of complementary structure amplifiers of difference form；Amplifier in connects pole complementary amplifier NMOS and a grid for PMOS amplifier tube by ac coupling capacitor, is simultaneously connected with another pole amplifier NMOS and the source electrode of PMOS amplifier tube.The drain electrode of NMOS amplifier tube and PMOS amplifier tube connects, and as one outfan of amplifier, grid connects two input coupling electric capacity respectively, and another pole plate of input coupling electric capacity links together, as an input of amplifier.NMOS amplifier tube source electrode connects biasing tail current, PMOS amplifier tube source electrode connects bias PMOS pipe, this offset grid voltage is provided by common mode feedback circuit output, the source electrode of NMOS amplifier tube and PMOS amplifier tube connects two input coupling electric capacity respectively, another pole of the two electric capacity links together, as another input of amplifier.Low-noise amplifier of the present invention can effectively strengthen gain, it is easy to accomplish input coupling.
Description
Technical field
The present invention relates to a kind of high-gain low-noise amplifier, especially one there is high-gain be prone to carry out input coupling
Low-noise amplifier, belong to IC design technical field.
Background technology
The signal that radio-frequency transmitter receives is the faintest, much at below-100dBm, and the therefore first order of receiver
Needing to be amplified small-signal, this needs first order amplifying circuit to have high-gain and low noise, receives signal amplifying
While, the impact on signal of the noise of reduction late-class circuit, therefore, the receiver first order generally uses low-noise amplifier
(LNA) realize.
To a cascade system, overall noiseproof feature depends on noiseproof feature and the gain of prime subsystem, prime
System noise factor is the least, and gain is the biggest, and the overall noise of cascade system is the best.Wherein, the impact of first order subsystem
Maximum, for radio-frequency transmitter, its overall noise depend primarily on first order low-noise amplifier noise coefficient and
Gain.Therefore, low-noise amplifier should possess higher gain under conditions of meeting low noise.
Meanwhile, low-noise amplifier typically requires and is connected with sheet external component, such as active antenna, SAW filter, Balun etc.,
Sheet external component is driven directly as load or output.Therefore, input needs to be hindered with the input realizing 50 Ω by impedance matching
Anti-.
Coupling does not directly affect the noiseproof feature of LNA, but from the point of view of signal power is transmitted, match condition is to entirety
Noiseproof feature can produce considerable influence.When impedance mismatch, through-put power occurs reflection to increase, and logical band attenuation increases, fall
Low receiving sensitivity；Out-of-band rejection declines, and reduces the ability of filtering interference signals, can affect system linear degree.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of high-gain low-noise amplifier, should
Low-noise amplifier can effectively strengthen gain, it is easy to accomplish input coupling, and simple in construction is general, it is simple to realize.
The technical scheme provided according to the present invention, described high-gain low-noise amplifier, it is characterized in that: include difference form
First pair of amplifier to complementary structure and second pair of amplifier, first pair of amplifier includes the first amplifier tube NM1 and second
Amplifier tube NM2, second pair of amplifier includes the 3rd amplifier tube PM1 and the 4th amplifier tube PM2；
The input VIP of described low-noise amplifier connects the first amplifier tube NM1, the 3rd amplification by input coupling electric capacity
The grid of pipe PM1 and the second amplifier tube NM2, the source electrode of the 4th amplifier tube PM2, the input VIN of described low-noise amplifier
Connect the first amplifier tube NM1, the source electrode of the 3rd amplifier tube PM1 and the second amplifier tube NM2 by input coupling electric capacity, the 4th put
The grid of big pipe PM2；
Described first amplifier tube NM1 drain electrode and the 3rd amplifier tube PM1 drain electrode connect, as outfan VON；Described second puts
Big pipe NM2 drain electrode and the 4th amplifier tube PM2 drain electrode connect, as outfan VOP；
The source electrode of described first amplifier tube NM1 connects the source electrode of the first bias current IB1, the second amplifier tube NM2 and connects the
Two bias current IB2；The source electrode of described 3rd amplifier tube PM1 connects the drain electrode of the first current mirror PM3, the 4th amplifier tube PM2's
Source electrode connects the drain electrode of the second current mirror PM4.
Further, described first amplifier tube NM1 drain electrode and the 3rd amplifier tube PM1 drain electrode meet the first load resistance RL1 mono-
End, the second amplifier tube NM2 drain electrode and the 4th amplifier tube PM2 drain electrode meet second load resistance RL2 one end, the first load resistance RL1
It is connected with the other end of the second load resistance RL2, and is input to the positive input terminal of common mode feedback circuit, common mode as common-mode voltage
Negative input termination reference voltage V REF of feedback circuit, the outfan of common mode feedback circuit is connected to the first current mirror PM3 and the
The grid of two current mirror PM4.
Further, described first amplifier tube NM1 drain electrode is connected with the 3rd amplifier tube PM1 drain electrode, and it is defeated to be connected to first
Going out to couple electric capacity CL1 mono-pole, first another pole of output coupling capacitor CL1 is as low-noise amplifier negative output terminal VON；Described
Two amplifier tube NM2 drain electrodes are connected with the 4th amplifier tube PM2 drain electrode, and are connected to the second output coupling capacitor CL2 mono-pole, and second is defeated
Go out to couple another pole of the electric capacity CL2 positive output end VOP as low-noise amplifier.
Further, the grid of described first amplifier tube NM1 and the second amplifier tube NM2 is respectively by the first biasing resistor
RB1 and the second biasing resistor RB2 is connected to the grid of bias voltage VBN, the 3rd amplifier tube PM1 and the 4th amplifier tube PM2 respectively
It is connected to bias voltage VBP by the 3rd biasing resistor RB3 and the 4th biasing resistor RB4.
Further, the working direct current size that described first current mirror PM3 and the second current mirror PM4 provides is IB,
First bias current IB1=the second bias current IB2=IB.
Further, described first amplifier tube NM1, the second amplifier tube NM2 use NMOS to be placed on pipe, the 3rd amplifier tube PM1,
4th amplifier tube PM4 uses PMOS amplifier tube.
High-gain low-noise amplifier of the present invention, it is possible to effectively strengthen gain, it is easy to accomplish input coupling, it is adaptable to
General purpose CMOS technology.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of high-gain low-noise amplifier place of the present invention receiver system.
Fig. 2 is low-noise amplifier differential configuration circuit diagram in the embodiment of the present invention.
Fig. 3 is the schematic diagram of common mode feedback circuit in the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with concrete accompanying drawing, the invention will be further described.
As it is shown in figure 1, be the structured flowchart of low-noise amplifier place receiver system, including antenna 11, surface acoustic wave
Wave filter 12, single-ended/differential converter (Balun) 13 and receiver radio frequency AFE (analog front end) 14, wherein, before receiver radio frequency simulation
End 14 includes that low-noise amplifier 143,90 ° of phase-shift circuits 144 of the 141, first frequency mixer the 142, second frequency mixer, local oscillator occur electricity
Road 145 and 146,90 ° of phase-shift circuits 144 of ABB and local oscillator generation circuit 145 constitute frequency synthesizer.Operation principle is:
System receives RF small signals by antenna 11, filters the outer noise of passage through SAW filter 12, through single-ended/difference
Transducer 13 is converted to differential signal and is input to low-noise amplifier 141 and is amplified, and the signal after amplification is believed with orthogonal local oscillation
Number carrying out down coversion by frequency mixer is converted to intermediate-freuqncy signal or fundamental frequency signal, and this signal turns after ABB 146 processes
It is changed to digital signal process.Low-noise amplifier (LNA) 141 is positioned at receptor foremost, isolates rear class noise
It is amplified with the docking collection of letters number.
As in figure 2 it is shown, high-gain low-noise amplifier of the present invention, mainly include the first amplifier tube NM1, the second amplification
Pipe NM2, the 3rd amplifier tube PM1, the 4th amplifier tube PM2, first input coupling electric capacity C1, second input coupling electric capacity C2, the 3rd
Input coupling electric capacity C3, the 4th input coupling electric capacity C4, the 5th input coupling electric capacity C5, the 6th input coupling electric capacity C6, the 7th
Input coupling electric capacity C7, the 8th input coupling electric capacity C8, the first output coupling capacitor CL1, the second output coupling capacitor CL2, the
One load resistance RL1, the second load resistance RL2, the first biasing resistor RB1, the second biasing resistor RB2, the 3rd biasing resistor
RB3, the 4th biasing resistor RB4, the first bias current IB1, the second bias current IB2, the first current mirror PM3 and the second electricity
Stream mirror PM4.Specifically:
First amplifier tube NM1 drain electrode is connected with the 3rd amplifier tube PM1 drain electrode, and is connected to the first output coupling capacitor CL1
One pole, first another pole of output coupling capacitor CL1 is as low-noise amplifier negative output terminal VON；Second amplifier tube NM2 drain electrode and
4th amplifier tube PM2 drain electrode is connected, and is connected to the second output coupling capacitor CL2 mono-pole, the second output coupling capacitor CL2 another
Pole is as the positive output end VOP of low-noise amplifier；
Meanwhile, the first amplifier tube NM1 drain electrode, the 3rd amplifier tube PM1 drain electrode connect first load resistance RL1 one end, and second puts
Big pipe NM2 drain electrode, the 4th amplifier tube PM2 drain electrode connect second load resistance RL2 one end, the first load resistance RL1 and second load
The other end of resistance RL2 is connected, and is input to the positive input terminal of common mode feedback circuit CMFB as common-mode voltage, common-mode feedback electricity
Road CMFB negative input termination reference voltage V REF, the outfan of common mode feedback circuit CMFB be connected to the first current mirror PM3 and
The grid of the second current mirror PM4, it is provided that bias；
The working direct current of the first amplifier tube NM1 is provided by the first bias current IB1 of source electrode, the second amplifier tube NM2
Working direct current by source electrode second bias current IB2 provide, first bias current IB1=the second bias current IB2=
IB, the working direct current of the 3rd amplifier tube PM1 and the 4th amplifier tube PM2 is carried by the first current mirror PM3 and the second current mirror PM4
Confession, size is IB；
The grid of the first amplifier tube NM1 and the second amplifier tube NM2 is respectively by the first biasing resistor RB1 and the second biased electrical
Resistance RB2 is connected to bias voltage VBN, and the grid of the 3rd amplifier tube PM1 and the 4th amplifier tube PM2 is respectively by the 3rd biasing resistor
RB3 and the 4th biasing resistor RB4 is connected to bias voltage VBP.
Described first amplifier tube NM1, the second amplifier tube NM2 use NMOS to be placed on pipe, the 3rd amplifier tube PM1, the 4th amplification
Pipe PM2 uses PMOS amplifier tube.
Low-noise amplifier of the present invention uses complementary structure, i.e. NMOS amplifier tube is connected with the drain electrode of PMOS amplifier tube
Connect, it is achieved mutual conductance is added, amplify compared to single NMOS tube or single PMOS is amplified, improve gain.
Low-noise amplifier one pole input VIP of the present invention is by coupling the electric capacity grid as complementary structure amplifier
Pole inputs, it is achieved that the function of common source configuration amplifier；Another pole input VIN is separately input to NMOS by coupling electric capacity and puts
Big pipe and the source electrode of PMOS amplifier tube, it is achieved that the function of common gate structure amplifier.The most described low-noise amplifier achieves
The gain superposition of common source configuration amplifier and common gate structure amplifier, is effectively improved gain, and meanwhile, common source configuration amplifies utensil
Having the advantage being prone to carry out input coupling, the active component of the equivalent input impedance of described low-noise amplifier is about, wherein,
Gmn is the transconductance value of NMOS amplifier tube NM1 and NM2, and gmp is the transconductance value of PMOS amplifier tube PM1 and PM2；
For ensureing that NMOS amplifier tube is equal with the bias current of PMOS amplifier tube, the grid of the current offset tube of PMOS amplifier tube
Pole tension is provided by the output of common mode feedback circuit, secures the VD of described low-noise amplifier simultaneously so that
Amplifier tube is operated in saturation region and leaves rational nargin.
As in figure 2 it is shown, low-noise amplifier of the present invention uses differential configuration, it is possible to effectively suppress the shadow of common-mode noise
Ringing, the equivalent transconductance of described amplifier can approximate and be expressed as: Gm≈2(gmn+gmp), by regulation transistor parameter so that gmn
=gmp, wherein, gmnFor the mutual conductance of NMOS amplifier tube, gmpFor the mutual conductance of PMOS amplifier tube, from computing formula it can be seen that compare
In tradition common source configuration amplifier, low-noise amplifier of the present invention can improve the power gain of about 6 dB；Described low noise
The equivalent input impedance real part i.e. resistance of acoustic amplifier is about:Imaginary part is the appearance that parasitic capacitance produces
Anti-, the stray inductance resonance that this part is generally produced by encapsulation gold thread falls, the input impedance of the most described low-noise amplifier
Join and can be realized by adjustment amplifier tube transconductance value, reduce the complexity to off-chip matching network.
As it is shown on figure 3, be an exemplary embodiments of common mode feedback circuit in low-noise amplifier of the present invention.
Claims (6)
1. a high-gain low-noise amplifier, is characterized in that: include first pair of amplifier to complementary structure of difference form
With second pair of amplifier, first pair of amplifier includes the first amplifier tube NM1 and the second amplifier tube NM2, and second pair of amplifier includes
3rd amplifier tube PM1 and the 4th amplifier tube PM2；
The input VIP of described low-noise amplifier connects the first amplifier tube NM1, the 3rd amplifier tube by input coupling electric capacity
The grid of PM1 and the second amplifier tube NM2, the source electrode of the 4th amplifier tube PM2, the input VIN of described low-noise amplifier leads to
Cross input coupling electric capacity and connect the first amplifier tube NM1, the source electrode of the 3rd amplifier tube PM1 and the second amplifier tube NM2, the 4th amplification
The grid of pipe PM2；
Described first amplifier tube NM1 drain electrode and the 3rd amplifier tube PM1 drain electrode connect, as outfan VON；Described second amplifier tube
NM2 drain electrode and the 4th amplifier tube PM2 drain electrode connect, as outfan VOP；
The source electrode of described first amplifier tube NM1 connects the first bias current IB1, and it is inclined that the source electrode of the second amplifier tube NM2 connects second
Put electric current IB2；The source electrode of described 3rd amplifier tube PM1 connects the drain electrode of the first current mirror PM3, the source electrode of the 4th amplifier tube PM2
Connect the drain electrode of the second current mirror PM4.
2. high-gain low-noise amplifier as claimed in claim 1, is characterized in that: described first amplifier tube NM1 drain electrode and the
Three amplifier tube PM1 drain electrodes connect first load resistance RL1 one end, and the second amplifier tube NM2 drain electrode and the 4th amplifier tube PM2 drain electrode connect the
Two load resistance RL2 one end, the other end of the first load resistance RL1 and the second load resistance RL2 is connected, and as common-mode voltage
It is input to the positive input terminal of common mode feedback circuit, negative input termination reference voltage V REF of common mode feedback circuit, common-mode feedback electricity
The outfan on road is connected to the first current mirror PM3 and the grid of the second current mirror PM4.
3. high-gain low-noise amplifier as claimed in claim 1, is characterized in that: described first amplifier tube NM1 drain electrode and the
Three amplifier tube PM1 drain electrodes are connected, and are connected to the first output coupling capacitor CL1 mono-pole, first another pole of output coupling capacitor CL1
As low-noise amplifier negative output terminal VON；Described second amplifier tube NM2 drain electrode is connected with the 4th amplifier tube PM2 drain electrode, and even
Receiving the second output coupling capacitor CL2 mono-pole, second another pole of output coupling capacitor CL2 is as the positive output of low-noise amplifier
End VOP.
4. high-gain low-noise amplifier as claimed in claim 1, is characterized in that: described first amplifier tube NM1 and second is put
The grid of big pipe NM2 is connected to bias voltage VBN by the first biasing resistor RB1 and the second biasing resistor RB2 respectively, and the 3rd puts
The grid of big pipe PM1 and the 4th amplifier tube PM2 is connected to by the 3rd biasing resistor RB3 and the 4th biasing resistor RB4 respectively partially
Put voltage VBP.
5. high-gain low-noise amplifier as claimed in claim 1, is characterized in that: described first current mirror PM3 and second electricity
The working direct current size that stream mirror PM4 provides is IB, first bias current IB1=the second bias current IB2=IB.
6. high-gain low-noise amplifier as claimed in claim 1, is characterized in that: described first amplifier tube NM1, the second amplification
Pipe NM2 uses NMOS to be placed on pipe, and the 3rd amplifier tube PM1, the 4th amplifier tube PM4 use PMOS amplifier tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610856014.2A CN106230389B (en) | 2016-09-27 | 2016-09-27 | High gain low noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610856014.2A CN106230389B (en) | 2016-09-27 | 2016-09-27 | High gain low noise amplifier |
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| CN106230389A true CN106230389A (en) | 2016-12-14 |
| CN106230389B CN106230389B (en) | 2023-09-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610856014.2A Active CN106230389B (en) | 2016-09-27 | 2016-09-27 | High gain low noise amplifier |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248850A (en) * | 2017-04-24 | 2017-10-13 | 东南大学 | One kind is without inductance consumption high gain high linearity broadband low-noise amplifier |
| CN107493077A (en) * | 2017-09-01 | 2017-12-19 | 无锡泽太微电子有限公司 | A kind of wideband low noise amplifier circuit of Low-voltage Low-power |
| CN109889165A (en) * | 2019-02-01 | 2019-06-14 | 东南大学 | A kind of output common mode voltage regulated amplifier |
| CN110874111A (en) * | 2018-08-30 | 2020-03-10 | 赛灵思公司 | Current mode feedback source follower with enhanced linearity |
| CN111224683A (en) * | 2019-12-30 | 2020-06-02 | 北斗航天卫星应用科技集团有限公司 | Low-noise large dynamic radio frequency receiving channel |
| TWI792903B (en) * | 2022-01-28 | 2023-02-11 | 瑞昱半導體股份有限公司 | Amplifier and method for controlling common mode voltage of the same |
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| CN206077339U (en) * | 2016-09-27 | 2017-04-05 | 无锡中科微电子工业技术研究院有限责任公司 | high-gain low-noise amplifier |
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| US20060284679A1 (en) * | 2005-06-20 | 2006-12-21 | Chipcon As | Integrated circuit having a low power, gain-enhanced, low noise amplifying circuit |
| CN102064773A (en) * | 2009-11-16 | 2011-05-18 | 杭州士兰微电子股份有限公司 | Adjustable gain low noise amplifier |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107248850A (en) * | 2017-04-24 | 2017-10-13 | 东南大学 | One kind is without inductance consumption high gain high linearity broadband low-noise amplifier |
| CN107248850B (en) * | 2017-04-24 | 2020-06-16 | 东南大学 | Non-inductance low-power-consumption high-gain high-linearity broadband low-noise amplifier |
| CN107493077A (en) * | 2017-09-01 | 2017-12-19 | 无锡泽太微电子有限公司 | A kind of wideband low noise amplifier circuit of Low-voltage Low-power |
| CN110874111A (en) * | 2018-08-30 | 2020-03-10 | 赛灵思公司 | Current mode feedback source follower with enhanced linearity |
| CN109889165A (en) * | 2019-02-01 | 2019-06-14 | 东南大学 | A kind of output common mode voltage regulated amplifier |
| CN111224683A (en) * | 2019-12-30 | 2020-06-02 | 北斗航天卫星应用科技集团有限公司 | Low-noise large dynamic radio frequency receiving channel |
| CN111224683B (en) * | 2019-12-30 | 2022-03-11 | 北斗航天卫星应用科技集团有限公司 | Low-noise large dynamic radio frequency receiving channel |
| TWI792903B (en) * | 2022-01-28 | 2023-02-11 | 瑞昱半導體股份有限公司 | Amplifier and method for controlling common mode voltage of the same |
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|---|---|
| CN106230389B (en) | 2023-09-26 |
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