CN106953612A - A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating - Google Patents
A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating Download PDFInfo
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- CN106953612A CN106953612A CN201710156021.6A CN201710156021A CN106953612A CN 106953612 A CN106953612 A CN 106953612A CN 201710156021 A CN201710156021 A CN 201710156021A CN 106953612 A CN106953612 A CN 106953612A
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- electric capacity
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- 230000003071 parasitic effect Effects 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000005516 engineering process Methods 0.000 title claims abstract description 16
- 230000005611 electricity Effects 0.000 claims description 4
- 230000003321 amplification Effects 0.000 abstract description 3
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- Amplifiers (AREA)
Abstract
The invention discloses a kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating, including input pipe, biasing networks circuit, resonant network resistance and load resonant lattice network, parasitic capacitance is provided between the drain and gate of the input pipe, the biasing networks circuit includes the first electric capacity and first resistor, first electric capacity is connected with signal input part, the first resistor is connected with offset signal input, the resonant network resistance includes the first inductance, second electric capacity and parasitic capacitance, first inductance is connected with input pipe, the load resonant lattice network includes the second inductance, second resistance and the 3rd electric capacity, the source electrode of the input pipe is connected with ground terminal；It the method can be widely used in the high frequency signal amplification circuit such as low-noise amplifier, power amplifier.
Description
Technical field
The present invention relates to microelectronics techniques field, in particular, it is related to a kind of based on methods of parasitic feedback technology for eliminating
Plus and blowup circuit.
Background technology
Amplifier is a kind of conventional radio circuit, for being amplified to input radio frequency signal.According to different applications
Occasion, amplifier is divided into buffered-display driver amplifier, low-noise amplifier and power amplifier, and different amplifiers has corresponding
Index weigh its performance, such as noise coefficient, Maximum Power Output and power consumption, but gain is that all amplifiers must take into consideration
Index.Extend, limited by technique and pipe characteristic to millimeter wave or even Terahertz frequency range in particular with wireless communication frequency
System, amplifier substantially reduces what is even decayed to the amplification of these frequency band signals, therefore improve amplifier gain and
Effective working frequency turns into the key of design.
It is also most crucial circuit that Fig. 1, which show radio frequency amplifier most basic, by biasing resistor R1, capacitance C1, input
NMOS tube M1, load inductance LL, load capacitance CLWith load resistance RLConstitute.Biasing resistor R1For input pipe M1There is provided suitable straight
Flow operating point, capacitance C1Filter the dc component in input signal；Input pipe M1Input voltage signal is converted into electric current letter
Number and certain gain is provided；By inductance LL, electric capacity CLWith resistance RLCurrent signal is converted into output voltage letter by the load of composition
Number；The corresponding small-signal equivalent circuit of the amplifier is as shown in Fig. 2 wherein gm works for metal-oxide-semiconductor in certain bias point and necessarily
Mutual conductance under frequency, Cgs is the parasitic capacitance between input tube grid and source electrode, and Cgd is between input tube grid and drain electrode
Parasitic capacitance.Consider Cgd feedback effects small signal gain be：Gain=- (gm-jωCgd)RL/(1+jωCgdRL),
Under relatively low working frequency, gm is larger, ω2C2 gd<<1, so the gain of the amplifier is approximately-gmRL；With carrying for working frequency
Height, ω2C2 gdGradually increase, gain is gradually reduced；When working frequency rises to millimeter wave/submillimeter wave/Terahertz frequency range, across
Lead gm reductions, ω2C2 gdIncrease, gain is intended to 1 (i.e. 0dB), the amplification failure of amplifier.Therefore traditional structure is put
Big device circuit is due to the feedback effect of parasitic capacitance, and the gain of amplifier declines and effectively working frequency is limited.
The content of the invention
Instant invention overcomes the deficiencies in the prior art, there is provided a kind of plus and blowup based on methods of parasitic feedback technology for eliminating
Circuit, the circuit bridges a resonant inductance in the input and output end of Conventional amplifiers input pipe, eliminates output end and defeated
Enter feedback caused by parasitic capacitance between end, so as to improve the gain of amplifier.
Technical scheme is as follows：
A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating, including input pipe, biasing networks circuit, resonance
Lattice network and load resonant lattice network, are provided with parasitic capacitance, the biasing net between the grid of the input pipe and drain electrode
Network circuit includes the first electric capacity and first resistor, and first electric capacity is connected with signal input part, the first resistor and biasing
Signal input part connect, the resonant network resistance include the first inductance, the second electric capacity and parasitic capacitance, first inductance with
Input pipe is connected, and the load resonant lattice network includes the second inductance, second resistance and the 3rd electric capacity, the source of the input pipe
Pole is connected with ground terminal.
Further, one end connection signal input part of first electric capacity, the other end and first resistor of the first electric capacity
One end, the grid connection of one end of the first inductance and input pipe.
Further, the other end connection offset signal input of the first resistor.
Further, the other end of first inductance is connected with one end of the second electric capacity.
Further, the drain electrode of the other end and input pipe of second electric capacity, one end of the second inductance, the 3rd electric capacity
One end and the connection of one end of second resistance.
Further, the other end and power supply of the other end of the second inductance, the other end of the 3rd electric capacity and second resistance are defeated
Enter end connection.
Advantage is the present invention compared with prior art：Because in traditional radio frequency amplifying circuit, due to input pipe output
The feedback effect that parasitic capacitance is introduced between end and input makes the gain reduction of amplifier；This feedback effect is with work simultaneously
The increase of working frequency and strengthen, cause amplifier effective working frequency be limited, and the present invention amplifier input pipe output
Between end and input and connect a resonant inductance, eliminate and fed back as caused by parasitic capacitance, make the gain and effectively of amplifier
Working frequency is improved.And the clear principle of the present invention, circuit structure is simple, it is easy to realized with integrated or discrete mode.
The present invention is realizes that millimeter wave/submillimeter wave/Terahertz amplifier circuit of high-gain provides letter under the conditions of existing process
Clean effective method.The present invention is applied to integrated or discrete radio frequency low-noise amplifier, radio frequency buffering amplifier and radio frequency work(
The circuits such as rate amplifier, the millimeter wave that is particularly suitable for use in, submillimeter involve the amplifying circuit of Terahertz frequency range.
Brief description of the drawings
Fig. 1 is the schematic diagram of radio frequency amplifier in the prior art；
Fig. 2 is the small-signal equivalent circuit of circuit shown in Fig. 1；
Fig. 3 is a kind of a kind of radio frequency amplifier of the plus and blowup circuit based on methods of parasitic feedback technology for eliminating of the present invention
Circuit diagram；
Fig. 4 is small for a kind of Fig. 3 of the plus and blowup circuit based on methods of parasitic feedback technology for eliminating circuit diagram of the present invention
Signal equivalent circuit diagram.
Embodiment
The present invention is further described with reference to the accompanying drawings and detailed description.
A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating, including input pipe, biasing networks circuit, resonance
Lattice network and load resonant lattice network, are provided with parasitic capacitance, the biasing net between the grid of the input pipe and drain electrode
Network circuit includes the first electric capacity and first resistor, and the resonant network resistance includes the first inductance, the second electric capacity and parasitic capacitance,
First electric capacity is connected with signal input part, and the first resistor is connected with offset signal input, the load resonant net
Network circuit includes the second inductance, second resistance and the 3rd electric capacity, and first inductance is connected with input pipe, first electric capacity
One end connects signal input part, the other end of the first electric capacity and one end of first resistor, one end of the first inductance and input pipe
Grid is connected.The other end connection offset signal input of the first resistor.The other end of first inductance and the second electricity
One end connection of appearance.The drain electrode of the other end and input pipe of second electric capacity, one end of the second inductance, one end of the 3rd electric capacity
And one end connection of second resistance.The other end of the other end of second inductance, the other end of the 3rd electric capacity and second resistance and electricity
Source input connection.The source electrode of the input pipe is connected with ground terminal.
Embodiment 1,
Circuit of the present invention can be realized using single-chip integration mode or discrete component mode.As shown in figure 3, it includes input
Pipe, biasing networks circuit, resonant network resistance and load resonant lattice network, the input pipe are input NMOS tube M1, it is described
Biasing networks circuit includes biasing resistor R1, capacitance C1, the resonant network resistance include feedback inductance Lfeedback, feedback
Electric capacity CfeedbackWith input NMOS tube M1Grid and drain electrode between parasitic capacitance Cpar, the load resonant lattice network bag
Include load inductance LL, load capacitance CLWith load resistance RL.Biasing resistor R1For input NMOS tube M1Suitable DC operation is provided
Point, biasing resistor R1The larger leakage to reduce radio-frequency input signals of resistance.Capacitance C1Filter input signal VinIn
Dc component, capacitance C1Its capacitance is also larger to reduce loss of the radiofrequency signal on capacitance.Input NMOS tube M1
Gate input voltage signal is converted into drain electrode output current signal and certain gain is provided；And by load resonant lattice network
Input NMOS tube M1The current signal of drain electrode output is converted into output voltage signal Vout.Load inductance LL, load capacitance CL's
Resonant frequency is used as the frequency of input signal, and the effect that there is to output signal frequency-selecting to amplify.Input NMOS tube M1Grid
Parasitic capacitance C is set between drain electrodepar, parasitic capacitance CparPresence reversed-phase output signal can be fed back to in-phase input end,
Particularly when frequency input signal is in millimeter wave/submillimeter wave/Terahertz frequency range, now parasitic capacitance CparThe resistance presented
Anti- far smaller than load resistance RLImpedance, therefore input NMOS tube M1The major part of drain electrode output current can pass through parasitic electricity
Hold CparFeed back to input, the electric current for flowing into load reduces, attenuated output signal it is very serious.Resonant network resistance it is humorous
Vibration frequency is the frequency of input signal, now from input NMOS tube M1Drain electrode see into going to input NMOS tube M1Grid resistance
Resist for infinity, eliminate by parasitic capacitance CparThe output inversion signal of in-phase input end is fed back to, so as to improve voltage increasing
Beneficial and effective working frequency.Feedback capacity CfeedbackRealize the isolation of direct current signal between output end and input, feedback capacity
CfeedbackCapacitance it is larger so as to reducing influence of its impedance to inductive impedance.
Fig. 4 show the small-signal equivalent circuit of Fig. 3 circuits, as load inductance LLWith load capacitance CLResonance is believed in input
At number frequency, feedback inductance LfeedbackWith parasitic capacitance CparWhen resonance is at input signal frequency, the voltage gain of amplifier
For-gmRL, gain size gmRL, and the voltage gain of prior art radio frequency amplifier is-(g as shown in Figure 1 and Figure 2m-jωCgd)
RL/(1+jωCgdRL), gain size is [(g2 m+ω2C2 gd)R2 L/(1+ω2C2 gd R2 L)]1/2。
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, without departing from the inventive concept of the premise, can also make some improvements and modifications, these improvements and modifications also should be regarded as
In the scope of the present invention.
Claims (6)
1. a kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating, it is characterised in that including input pipe, biasing networks
Circuit, resonant network resistance and load resonant lattice network, are provided with parasitic capacitance, institute between the grid of the input pipe and drain electrode
Stating biasing networks circuit includes the first electric capacity and first resistor, and first electric capacity is connected with signal input part, first electricity
Resistance is connected with offset signal input, and the resonant network resistance includes the first inductance, the second electric capacity and parasitic capacitance, described the
One inductance is connected with input pipe, and the load resonant lattice network includes the second inductance, second resistance and the 3rd electric capacity, described defeated
The source electrode for entering pipe is connected with ground terminal.
2. a kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating according to claim 1, it is characterised in that：
One end connection signal input part of first electric capacity, the other end of the first electric capacity and one end of first resistor, the first inductance
The grid connection of one end and input pipe.
3. a kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating according to claim 2, it is characterised in that：
The other end connection offset signal input of the first resistor.
4. a kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating according to claim 2, it is characterised in that：
The other end of first inductance is connected with one end of the second electric capacity.
5. a kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating according to claim 4, it is characterised in that：
The drain electrode of the other end and input pipe of second electric capacity, one end of the second inductance, one end of the 3rd electric capacity and second resistance
One end is connected.
6. a kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating according to claim 5, it is characterised in that：
The other end of the other end of second inductance, the other end of the 3rd electric capacity and second resistance is connected with power input.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710156021.6A CN106953612A (en) | 2017-03-16 | 2017-03-16 | A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710156021.6A CN106953612A (en) | 2017-03-16 | 2017-03-16 | A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating |
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| CN106953612A true CN106953612A (en) | 2017-07-14 |
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| CN201710156021.6A Pending CN106953612A (en) | 2017-03-16 | 2017-03-16 | A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109257022A (en) * | 2018-11-02 | 2019-01-22 | 电子科技大学 | A kind of working frequency levels off to fT/ 2 broad band amplifier |
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
| WO2021109660A1 (en) * | 2019-12-02 | 2021-06-10 | 广州慧智微电子有限公司 | Amplifier and amplification method |
| CN116073775A (en) * | 2020-01-03 | 2023-05-05 | 广州慧智微电子股份有限公司 | Radio frequency signal processing circuit |
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| US20080012648A1 (en) * | 2006-05-11 | 2008-01-17 | Pi-An Wu | Communications system with variable load and related method |
| CN101924524A (en) * | 2010-08-25 | 2010-12-22 | 复旦大学 | Differential complementary metal-oxide-semiconductor (CMOS) multi-mode low-noise amplifier with on-chip active Balun |
| CN102969984A (en) * | 2012-11-12 | 2013-03-13 | 东南大学 | Low noise amplifier for current reuse and noise cancellation |
| JP2013093733A (en) * | 2011-10-25 | 2013-05-16 | Fujitsu Semiconductor Ltd | Bias circuit and amplifier circuit having the same |
| CN103532497A (en) * | 2013-10-18 | 2014-01-22 | 中国科学技术大学 | Ultra-wide-band low-noise amplifier adopting inductance compensation technology |
| CN206727964U (en) * | 2017-03-16 | 2017-12-08 | 杭州电子科技大学 | A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating |
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2017
- 2017-03-16 CN CN201710156021.6A patent/CN106953612A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080012648A1 (en) * | 2006-05-11 | 2008-01-17 | Pi-An Wu | Communications system with variable load and related method |
| CN101924524A (en) * | 2010-08-25 | 2010-12-22 | 复旦大学 | Differential complementary metal-oxide-semiconductor (CMOS) multi-mode low-noise amplifier with on-chip active Balun |
| JP2013093733A (en) * | 2011-10-25 | 2013-05-16 | Fujitsu Semiconductor Ltd | Bias circuit and amplifier circuit having the same |
| CN102969984A (en) * | 2012-11-12 | 2013-03-13 | 东南大学 | Low noise amplifier for current reuse and noise cancellation |
| CN103532497A (en) * | 2013-10-18 | 2014-01-22 | 中国科学技术大学 | Ultra-wide-band low-noise amplifier adopting inductance compensation technology |
| CN206727964U (en) * | 2017-03-16 | 2017-12-08 | 杭州电子科技大学 | A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109257022A (en) * | 2018-11-02 | 2019-01-22 | 电子科技大学 | A kind of working frequency levels off to fT/ 2 broad band amplifier |
| CN109257022B (en) * | 2018-11-02 | 2021-08-10 | 电子科技大学 | Working frequency approaches to fTBroadband amplifier of/2 |
| WO2021109660A1 (en) * | 2019-12-02 | 2021-06-10 | 广州慧智微电子有限公司 | Amplifier and amplification method |
| CN116073775A (en) * | 2020-01-03 | 2023-05-05 | 广州慧智微电子股份有限公司 | Radio frequency signal processing circuit |
| CN116073775B (en) * | 2020-01-03 | 2024-06-07 | 广州慧智微电子股份有限公司 | Radio frequency signal processing circuit |
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Gao Haijun Inventor after: Jing Song Inventor after: Sun Lingling Inventor before: Gao Haijun Inventor before: Sun Lingling |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170714 |