CN105281682B - The two-way noise reduction low-noise amplifier of low-power consumption - Google Patents
The two-way noise reduction low-noise amplifier of low-power consumption Download PDFInfo
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Abstract
The present invention proposes a kind of two-way noise reduction low-noise amplifier of low-power consumption, it is low to be intended to provide a kind of noise coefficient, reliability is high, gain stabilization, common bank tube channel noise, the two-way noise reduction low-noise amplifier of low-power consumption for reducing common source pipe channel noise and common source end load resistance thermal noise can be eliminated, the technical scheme is that：Impedance down conversion network by the common source amplifying circuit of common gate amplifying circuit and associated feedback resistance collectively constitute a single ended input, both-end export low noise amplifier circuit, wherein, common gate input amplifying circuit is made of metal-oxide-semiconductor M1 series connection metal-oxide-semiconductor M3 and its load resistance R1 being connected between metal-oxide-semiconductor M3 drain electrodes and power vd D；Common source input amplifier circuit by connection metal-oxide-semiconductor M2 source electrodes capacitance C3 series connection metal-oxide-semiconductor M2 series connection metal-oxide-semiconductors M4, the feedback resistance R3 being connected in parallel between metal-oxide-semiconductor M2 grids and metal-oxide-semiconductor M4 drain electrodes and the load resistance R2 being connected between metal-oxide-semiconductor M4 drain electrodes and power vd D are formed.
Description
Technical field
The present invention relates to the radio frequency integrated low-noise amplifier in a kind of wireless communication field radio-frequency transmitter more particularly to
A kind of low-noise amplifier using two-way noise reduction technology.
Background technology
Low-noise amplifier is the important component of receiver in wireless telecommunication system, the parameters such as its noise and gain
Directly affect the performance indicators such as noise coefficient and the sensitivity for the receipts that pick.It is always at the position of front end in reception system
It puts, the small-signal mainly received to whole system is amplified, and reduce the interference of noise, restricts entire reception system
Performance.Low-noise amplifier plays a decisive role to the noise characteristic of whole system, and this requires its noise coefficient is smaller more
It is good.In order to inhibit influence of the subsequent stages noise to system, also require it that there is certain gain.Compared with base amplifier,
On the one hand low-noise amplifier with the signal of amplification system, can ensure the normal operation of system work；On the other hand can reduce
The noise jamming of system improves the sensitivity of system.Therefore, for low-noise amplifier, emphasis is that requirement amplifier has pole
Low noise coefficient can obtain certain gain again simultaneously, and half-way house must be thus taken between noise and gain.Low noise
The main performance index of acoustic amplifier has noise coefficient, gain, input and output standing wave and with interior gain flatness etc..Wherein：1.
Noise coefficient reflection signal passes through the deterioration degree after low-noise amplifier, it is always desirable to and it is the smaller the better, it is that low noise designs most
Crucial index, the size of noise coefficient are mainly related with the quiescent point of transistor, load resistance and singal source resistance.2.
Wideband low noise amplifier is difficult to meet low noise requirement.3. low-noise amplifier should have certain gain, behind inhibition
Influence at different levels to system noise factor, but its gain should not be too big, and frequency mixer below is avoided to generate non-linear distortion.4. increase
Beneficial flatness refers to the fluctuating of gain in working band, gain is not allowed to have abrupt change.Low-noise amplifier is as most radio frequencies
First active module embedded therein of receiver, effect can be described as very important.For the radio-frequency transmitter of broadband application, one
The low-noise amplifier in broadband is essential.In the application of such as mobile terminal, low-power consumption is also an important need.
And in the design of low-noise amplifier, low-power consumption is the difficult point and hot spot studied instantly, is particularly ensureing bandwidth, noise-induced
The circuit of power consumption can be reduced without being realized on the basis of deteriorating.In miscellaneous amplifier circuit in low noise, have low defeated
The common-gate low noise amplifier for entering impedance feature is that broadband inputs one of matched conventional selection；The common source of strip resistance negative-feedback is low
Noise amplifier is also usually to be applied to realize that broadband inputs one of matched conventional selection.Conventional Differential Input low noise
Although amplifier can suppression common mode noise well, in the designs, a balun converter is generally required, by one
Single ended signal is converted to differential signal.In the case where not using balun converter, traditional common grid-common source noise reduction knot
Structure low-noise amplifier can realize single ended input, both-end output, meanwhile, the channel noise of bank tube is completely eliminated altogether.But
It is that, for traditional common grid-common source denoising structure low-noise amplifier, the electric current that directly reduce common bank tube is difficult, because
Need to provide 50 ohm of input resistant matching for common bank tube；Meanwhile the transconductance value of common source pipe be also required to be set to it is one higher
Value, can achieve the effect that inhibit its noise, but can cause in this way common source pipe consume electric current it is excessive, power consumption is excessively high.
Invention content
The purpose of the present invention is being directed to the shortcoming of existing low-noise amplifier technology, it is low to provide a kind of noise coefficient,
Reliability is high, and gain stabilization can not only provide difference output for low-noise amplifier, moreover it is possible to eliminate bank tube raceway groove heat altogether and make an uproar
Sound can reduce the two-way noise reduction low noise amplification of low-power consumption of common source pipe channel noise and common source end load resistance thermal noise
Device, to solve the problems, such as to receive the high power consumption of the common grid-common source noise cancellation technology structure of frequency range tradition in the range of 1GHz to 2GHz.
In order to achieve the above object, the present invention adopts the following technical scheme that：A kind of two-way noise reduction low noise amplification of low-power consumption
Device, including:Impedance down conversion network, common gate amplifying circuit, it is characterised in that：Impedance down conversion network is amplified by common gate
It is electric that common source amplifying circuit of the circuit in parallel with feedback resistance collectively constitutes a single ended input, the low noise amplification of both-end output
Road, wherein, common gate input amplifying circuit is by metal-oxide-semiconductor M1 series connection metal-oxide-semiconductor M3 and its is connected on metal-oxide-semiconductor M3 drain electrodes and power vd D
Between load resistance R1 form；Common source input amplifier circuit by connection metal-oxide-semiconductor M2 source electrodes capacitance C3 connect metal-oxide-semiconductor
M2, metal-oxide-semiconductor M2 series connection metal-oxide-semiconductor M4, the feedback resistance R3 being connected in parallel between metal-oxide-semiconductor M2 grids and metal-oxide-semiconductor M4 drain electrodes and series connection
Load resistance R2 between metal-oxide-semiconductor M4 drain electrodes and power vd D is formed；Impedance down conversion network passes through metal-oxide-semiconductor M1 source series
Capacitance C3 and metal-oxide-semiconductor M2 grids；Capacitance C3 keeps apart common gate amplifying circuit and the DC channel of common source amplifying circuit.
The present invention has the advantages that compared with the prior art.
Low noise amplifier circuit of the present invention uses common gate amplifying circuit, the two-way noise reduction skill that common source amplifying circuit is formed
Art and power-saving technology, by reasonably selecting capacitance and inductance value in input impedance down conversion network so that lower
During the situation of power consumption, remain able to obtain good input matching in 1GHz to 2GHz frequency ranges.
The present invention can be final so that common grid by reasonably adjusting amplifier tube, feedback resistance and the size of load resistance
The channel noise of amplifier tube is completely eliminated, and the channel noise of common source amplifier tube and the thermal noise of common source end load resistance are by portion
Divide and eliminate.
The present invention passes through an impedance down conversion matching network so that circuit has remained able to good in the case of low-power consumption
Good input matching performance；The common source input amplification that the common gate input amplifier and metal-oxide-semiconductor M2 that metal-oxide-semiconductor M1 is formed are formed
Device can not only provide difference output, moreover it is possible to eliminate the channel noise of metal-oxide-semiconductor M1 for low-noise amplifier；Resistance R3 is formed
Negative feedback path can not only reduce input impedance, moreover it is possible to partially remove the channel noise of metal-oxide-semiconductor M2 and the heat of resistance R2
Noise.
The present invention is using impedance downconverter and novel grid-common source low-noise amplifier altogether of increase feedback resistance.Pass through
Adjust the value of R1, R2 and R3 so that the channel noise of bank tube M1 is completely eliminated altogether, the channel noise of common source pipe M2 and R3's
Thermal noise is partially removed.
The present invention provides a kind of circuits that low-power consumption low-noise amplifier is realized in 1GHz to 2GHz frequency ranges.
Description of the drawings
Fig. 1 is the circuit structure block diagram of the two-way noise reduction low-noise amplifier of low-power consumption of the present invention；
Fig. 2 is the circuit theory schematic diagram of Fig. 1.
Fig. 3 is a kind of way of realization of Fig. 1 input impedance down conversion networks.
Fig. 4 is the Smith chart that Fig. 3 input impedance down conversion networks convert common gate input impedance.
Fig. 5 is the input impedance rough schematic view of Fig. 1 common gates amplifying circuit and common source amplifying circuit.
Fig. 6 is input matching, gain and the noise coefficient emulation of the low-noise amplifier of the two-way noise reduction of low-power consumption of the present invention
As a result.
Fig. 7 is the schematic diagram of the two-way noise reduction low-noise amplifier of simplified low-power consumption.
Fig. 8 is simulation curve schematic diagram.
Specific embodiment：
Refering to Fig. 1, Fig. 2.In a most preferred embodiment of following embodiment description, the two-way noise reduction low noise of low-power consumption is put
Big device includes:Impedance down conversion network, common gate amplifying circuit and the common source amplifying circuit with feedback resistance；Common gate amplifies
Circuit and the low noise amplification electricity that the common source amplifying circuit with feedback resistance collectively constitutes a single ended input, both-end exports
Road；Wherein, metal-oxide-semiconductor is N-type mos field effect transistor.Common gate input amplifying circuit and with feedback electricity
The common source amplifying circuit of resistance all employs cascode structures.Common gate input amplifying circuit is by metal-oxide-semiconductor M1 series connection metal-oxide-semiconductors M3
And its load resistance R1 being connected between metal-oxide-semiconductor M3 drain electrodes and power vd D is formed；Common source input amplifier circuit is by connecting
Capacitance C3 series connection metal-oxide-semiconductor M2, metal-oxide-semiconductor M2 the series connection metal-oxide-semiconductor M4 of metal-oxide-semiconductor M2 source electrodes, are connected in parallel on metal-oxide-semiconductor M2 grids and metal-oxide-semiconductor M4
Feedback resistance R3 between drain electrode and the load resistance R2 being connected between metal-oxide-semiconductor M4 drain electrodes and power vd D are formed；Impedance
Down conversion network passes through metal-oxide-semiconductor M1 source series capacitance C3 and metal-oxide-semiconductor M2 grids；Capacitance C3 is by common gate amplifying circuit and common source
The DC channel of pole amplifying circuit is kept apart.
The source electrode of the drain electrode connection metal-oxide-semiconductor M3 of metal-oxide-semiconductor M1, amplifies radio-frequency input signals forward direction.The grid of metal-oxide-semiconductor M1 by
Additional biasing circuit gives bias voltage Vb1, and the grid of metal-oxide-semiconductor M3 gives bias voltage Vb2 by additional biasing circuit, bears
It carries resistance R1 mono- and terminates supply voltage Vdd, the drain electrode of other end connection metal-oxide-semiconductor M3 and radiofrequency signal forward direction amplification output terminal
RFout1.The source electrode of capacitance C3 one end connection metal-oxide-semiconductor M1, the grid of other end connection metal-oxide-semiconductor M2, by common gate amplifying circuit with
The DC channel of common source amplifying circuit with feedback resistance is kept apart.
Common source input amplifying circuit with feedback resistance includes：Connect metal-oxide-semiconductor M2, source electrode and the metal-oxide-semiconductor M2 of capacitance C3
Feedback resistance R3 and one between the drain electrode of the metal-oxide-semiconductor M4 of drain series, the source electrode for being connected in parallel on metal-oxide-semiconductor M4 and metal-oxide-semiconductor NMOSM2
Terminate the load resistance R2 of supply voltage Vdd；Wherein, grid connection the capacitance C3 and feedback resistance R3, resistance R3 mono- of metal-oxide-semiconductor M2
The grid of end connection capacitance C3 and metal-oxide-semiconductor M4, other end connection resistance R2, the drain electrode of metal-oxide-semiconductor M4 and radiofrequency signal are reversely amplified
The grid of output terminal RFout2, metal-oxide-semiconductor M4 give bias voltage Vb2 by additional biasing circuit.The source electrode ground connection of metal-oxide-semiconductor M2,
Radio-frequency input signals is reversely amplified.Resistance R3 is provided for the thermal noise of channel noise and resistance R2 for eliminating metal-oxide-semiconductor M2
One feedback network.
For the ease of understanding the relationship between the power consumption of common gate amplifying circuit and input impedance, below to the input of M1 pipes
Detailed derivation is done in impedance and mutual conductance：
1. by the approximate calculation of small-signal model, the source input impedance of metal-oxide-semiconductor M1 is given by：
Zin=1/gm1
The relationship of the overdrive voltage Vov1 and raceway groove DC current I1 of mutual conductance gm1, M1 pipe of 2.M1 pipes are given by：
gm1=2I1/Vov1
In formula：Zin represents input impedance, and gm1 represents the mutual conductance of M1 pipes, and I1 represents the raceway groove DC current for flowing through M1 pipes,
Vov1 represents the overdrive voltage of M1 pipes.In order to obtain high mutual conductance, the overdrive voltage of M1 pipes under limited DC current
Value has been set to a relatively low level.If keep overdrive voltage constant, then the mutual conductance of M1 pipes and raceway groove DC current
It is directly proportional.If input impedance Zin is 50 ohm, and driving voltage Vov1 is 100mV, then corresponding DC current I1 is
1mA.If in order to save lower power consumption DC current, mutual conductance can be caused to reduce, input impedance increase.In this case, in order to
Realize input matching, it is necessary to use impedance down conversion network.
Refering to Fig. 3.Impedance down conversion network is in series by the capacitance and inductor combination of two L-types, and resistance Rs is signal
The internal resistance of source RFin.Impedance down conversion network is in series by the capacitance and inductor combination of two L-types, and resistance Rs is signal source
The internal resistance of RFin.The impedance down conversion network includes：Capacitance C1 in sequential series, capacitance C2, capacitance C2 both ends are connected in parallel on
Grounded inductor L1 and grounded inductor L2, inductance L2 provide the DC channel to ground for common gate amplifying circuit.Become under the impedance
Switching network can be put common source input amplifying circuit and the common source input with feedback resistance in the frequency range of 1GHz to 2GHz
The parallel input impedance of big circuit transforms to the rank to match with the interior resistance Rs of signal source.
Refering to Fig. 4.By Smith chart, it can clearly show that the impedance of the impedance down conversion network described in Fig. 3 becomes
Change process.It is assumed that singal source resistance is 50 ohm of standard, the input impedance 1/gm of common gate input amplifier is more than 50
Ohm, foregoing circuit is analyzed in 1.5GHz.First, become under the input impedance namely impedance of common gate input amplifier
The load impedance of switching network, corresponding to a points；Then, inductance L2 is in parallel with common gate input amplifier, this process corresponds to
In on Smith chart from original point a along etc. conductances circle be rotated up to new position b, rotation amount is determined by the susceptance of capacitance
It is fixed；Next, connecting again with capacitance C2, this process corresponds to be rotated up on Smith chart from b points along grade resistance circle
Point c；Next, in parallel with inductance L1 again, this process correspond on Smith chart from c points along etc. conductances circle be rotated up to
Point d；Finally, then with capacitance C2 it connects, this process corresponds to be rotated up to a little on Smith chart from d points along grade resistance circle
e.This shows that in 1.5GHz input impedance common gate amplifying circuit bigger than normal can be by impedance down conversion real-time performance and 50
The matching of ohmic internal resistance signal source.It describes for simplicity, the load impedance of impedance down conversion network is determined with 50 ohm of ratio
For β.When simulating, verifying shows β ≈ 2, circuit shown in Fig. 3 remains able to realize the broadband input matching of 1GHz to 2GHz.
Refering to Fig. 5.It is calculated in order to facilitate input impedance, Fig. 5 is omitted on the basis of Fig. 2 to generate input impedance
Cascode pipes M3, metal-oxide-semiconductor M4 and the capacitance C3 of influence.The input impedance of entire circuit is Zin.Altogether grid amplifying circuit and
The input impedance of common source amplifying circuit sys node with negative feedback resistor is Zin1.Common source amplifying circuit with negative feedback resistor
An impedance Z in2 in parallel is additionally provided for input impedance, so that input impedance is further reduced.Final is total to
Grid amplifying circuit and the input impedance of common source amplifying circuit are provided by formula below,
In formula：Zin represents input impedance, load impedances and 50 ohm of ratio of the β for impedance down conversion network, gm1 generations
The mutual conductance of table M1 pipes, gm2 represent the mutual conductance of M2 pipes.For the ease of understanding that the two-way noise reduction low noise of low-power consumption of the present invention is put
The two-way noise reduction technology used in big device circuit, below elaborates to its principle：
Refering to Fig. 6.In order to facilitate noise analysis, Fig. 6 is omitted on the basis of Fig. 2 to have an impact noise calculation
Cascode pipes M3, metal-oxide-semiconductor M4 and input matching network.The two-way noise reduction low-noise amplifier of simplified low-power consumption, including:Altogether
Grid amplifying circuit and the common source amplifying circuit with feedback resistance.Common gate input amplifier circuit is by metal-oxide-semiconductor M1 and its string
The load resistance R1 being associated between metal-oxide-semiconductor M1 drain electrodes and power vd D is formed.Common source input amplifier circuit is by being connected in parallel on resistance
The series connection metal-oxide-semiconductor M2 at R3 both ends and its load resistance R2 being connected between metal-oxide-semiconductor M2 drain electrodes and power vd D are formed.Metal-oxide-semiconductor M1
Channel noise electric current flowed out from the source electrode of metal-oxide-semiconductor M1, generate a noise voltage in the input terminal B points of common grid amplifying circuit
VnB；VnB is amplified by common-gird circuit, and a noise voltage VnA is generated in the output node A of common grid amplifying circuit；Meanwhile together
Deng the channel noise electric currents of M1 pipes flowed out from the drain electrodes of M1 pipes, generate a noise in the output node C of common source amplifying circuit
Voltage VnC；VnA and VnC has identical phase.By adjusting the size of each amplifier tube and resistance, noise voltage VnA can be made
It is equal with VnC, so that the channel noise of M1 pipes is eliminated.
Refering to Fig. 7.In order to facilitate noise analysis, Fig. 7 is omitted on the basis of Fig. 2 to have an impact noise calculation
Cascode pipes M3, M4 and input matching network.The two-way noise reduction low-noise amplifier of simplified low-power consumption, including:Common gate is put
Big circuit and the common source amplifying circuit with feedback resistance.Common gate input amplifier circuit is by metal-oxide-semiconductor M1 and its is connected on MOS
The load resistance R1 that pipe M1 drains between power vd D is formed.Common source input amplifier circuit is by being connected in parallel on resistance R3 both ends
Series connection metal-oxide-semiconductor M2 and its be connected on metal-oxide-semiconductor M2 drain electrode and power vd D between load resistance R2 form.M2 pipes are made an uproar with R2's
Sound feeds back to Rs by R3, obtains noise with the voltage noise VnD and VnE, E point that two same phases are produced at E at the D
It is further magnified by metal-oxide-semiconductor M1, is produced in F points and be still in phase voltage noise VnF.The relationship of VnD and VnF by
It is given below.
Refering to Fig. 8.Emulation display, in 1GHz to 2GHz bandwidth, the value of S21 is between 22.5dB and 23.5dB；S11
Less than -13dB；Noise coefficient NF is between 2.4dB and 2.8dB.
Claims (10)
1. a kind of two-way noise reduction low-noise amplifier of low-power consumption, including:Impedance down conversion network, common gate amplifying circuit, it is special
Sign is：Impedance down conversion network is collectively constituted by the common source amplifying circuit of common gate amplifying circuit and associated feedback resistance
One single ended input, the low noise amplifier circuit of both-end output, wherein, metal-oxide-semiconductor M1 series connection metal-oxide-semiconductor M3 and its it is connected on metal-oxide-semiconductor
The load resistance R1 that M3 drains between power vd D forms common gate input amplifying circuit, the drain electrode connection of wherein metal-oxide-semiconductor M1
The source electrode of metal-oxide-semiconductor M3 amplifies radio-frequency input signals forward direction；Common source input amplifier circuit is by connection metal-oxide-semiconductor M2 source electrodes
Capacitance C3 series connection metal-oxide-semiconductor M2, metal-oxide-semiconductor M2 series connection metal-oxide-semiconductor M4, are connected in parallel on anti-between metal-oxide-semiconductor M2 grids and metal-oxide-semiconductor M4 drain electrodes
Feed resistance R3 and the load resistance R2 being connected between metal-oxide-semiconductor M4 drain electrodes and power vd D are formed, wherein, resistance R3 is eliminates
The channel noise of metal-oxide-semiconductor M2 and the thermal noise of resistance R2 provide a feedback network；Impedance down conversion network passes through metal-oxide-semiconductor M1
Source series capacitance C3 and metal-oxide-semiconductor M2 grids, capacitance C3 is by the DC channel of common gate amplifying circuit and common source amplifying circuit
Keep apart；In the common source input amplifier that the common gate input amplifier and metal-oxide-semiconductor M2 formed in metal-oxide-semiconductor M1 is formed, M1 pipes
Channel noise electric current flowed out from the source electrodes of M1 pipes, generate a noise voltage VnB in the input terminal B points of common grid amplifying circuit,
VnB is amplified by common-gird circuit, and a noise voltage VnA is generated in the output node A of common grid amplifying circuit, meanwhile, equal
The channel noise electric current of M1 pipes is flowed out from the drain electrode of M1 pipes, and a noise voltage is generated in the output node C of common source amplifying circuit
VnC；VnA and VnC has identical phase；M2 is managed feeds back to Rs with the noise of R2 by R3, with being produced at E at D
The voltage noise VnD and VnE, E point of two same phases obtain noise and are further magnified by metal-oxide-semiconductor M1, are produced still in F points
So it is in phase voltage noise VnF.
2. the two-way noise reduction low-noise amplifier of low-power consumption according to claim 1, which is characterized in that impedance down conversion net
Network is using the input impedance of common gate input amplifier as load impedance, the input of inductance L2 parallel connection common gates amplifying circuit
End, and connect, then in parallel with inductance L1 with the capacitance C2 that rotation amount is determined by capacitance, it then connects again with capacitance C1, by history
This close circle carries out impedance transformation, justifies corresponding to Smith, from original point a along etc. conductances circle be rotated up to new position b, it is corresponding
In Smith justify, from c points along etc. conductances circle be rotated up to d points；Smith dot e is rotated up to from d points along grade resistance circle,
Input impedance common gate amplifying circuit bigger than normal by impedance down conversion real-time performance and singal source resistance matching.
3. the two-way noise reduction low-noise amplifier of low-power consumption according to claim 1, which is characterized in that the grid of metal-oxide-semiconductor M1
Bias voltage Vb1 is given by biasing circuit, the grid of metal-oxide-semiconductor M3 gives bias voltage Vb2, metal-oxide-semiconductor by additional biasing circuit
The grid of M4 gives bias voltage Vb2 by additional biasing circuit.
4. the two-way noise reduction low-noise amplifier of low-power consumption according to claim 1, which is characterized in that load resistance R1 mono-
Terminate supply voltage Vdd, the drain electrode of other end connection metal-oxide-semiconductor M3 and radiofrequency signal forward direction amplification output terminal RFout1.
5. the two-way noise reduction low-noise amplifier of low-power consumption according to claim 1, which is characterized in that capacitance C3 one end connects
Connect the source electrode of metal-oxide-semiconductor M1, the grid of other end connection metal-oxide-semiconductor M2, by common gate amplifying circuit and the common source with feedback resistance
The DC channel of amplifying circuit is kept apart.
6. the two-way noise reduction low-noise amplifier of low-power consumption according to claim 1, which is characterized in that common source input amplification
Circuit includes：The metal-oxide-semiconductor M2 of connection capacitance C3, the metal-oxide-semiconductor M4 of source electrode and metal-oxide-semiconductor M2 drain series, the source for being connected in parallel on metal-oxide-semiconductor M4
The load resistance R2 of the termination supply voltages of feedback resistance R3 and one Vdd between the drain electrode of pole and metal-oxide-semiconductor NMOSM2；Wherein, MOS
The grid connection capacitance C3 and feedback resistance R3 of pipe M2, resistance R3 one end connect the grid of capacitance C3 and metal-oxide-semiconductor M4, and the other end connects
Connecting resistance R2, the drain electrode of metal-oxide-semiconductor M4 and radiofrequency signal reversely amplify output terminal RFout2, and the grid of metal-oxide-semiconductor M4 is by additional inclined
Circuits give bias voltage Vb2.
7. the two-way noise reduction low-noise amplifier of low-power consumption according to claim 1, which is characterized in that the source electrode of metal-oxide-semiconductor M2
Ground connection, reversely amplifies radio-frequency input signals.
8. the two-way noise reduction low-noise amplifier of low-power consumption described in claim 1, which is characterized in that impedance down conversion network is by two
The capacitance of a L-type and inductor combination are in series, and resistance Rs is the internal resistance of signal source RFin, which can be
In the frequency range of 1GHz to 2GHz, by the parallel connection of common source input amplifying circuit and common source input amplifying circuit with feedback resistance
The rank that input impedance conversion matches to the interior resistance Rs with signal source.
9. the two-way noise reduction low-noise amplifier of low-power consumption according to claim 1 or 8, which is characterized in that anti-down conversion net
Network includes：Capacitance C1 in sequential series, capacitance C2, the grounded inductor L1 at capacitance C2 both ends and grounded inductor L2, inductance are connected in parallel on
L2 provides the DC channel to ground for common gate amplifying circuit.
10. the two-way noise reduction low-noise amplifier of low-power consumption according to claim 1, which is characterized in that common gate amplification electricity
Road and the input impedance of common source amplifying circuit are provided by formula below,
In formula：Zin represents input impedance, and β is that the load impedance of impedance down conversion network and 50 ohm of ratio, gm1 represent M1
The mutual conductance of pipe, gm2 represent the mutual conductance of M2 pipes.
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| CN105763161A (en) * | 2016-01-29 | 2016-07-13 | 中国科学院上海微系统与信息技术研究所 | Low-noise amplifier for nuclear magnetic resonance imaging |
| US10469043B2 (en) * | 2016-03-22 | 2019-11-05 | Microchip Technology Incorporated | Class AB common-source amplifier with constant transconductance |
| WO2017166109A1 (en) * | 2016-03-30 | 2017-10-05 | 武汉芯泰科技有限公司 | Low noise amplifier |
| CN106407556B (en) * | 2016-09-14 | 2019-04-30 | 中国科学院微电子研究所 | A kind of production method of integrated chip |
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
| CN112202408A (en) * | 2020-10-10 | 2021-01-08 | 西安博瑞集信电子科技有限公司 | Cascode radio frequency amplifier of GaN technology |
| CN112468099A (en) * | 2020-11-20 | 2021-03-09 | 北京昂瑞微电子技术股份有限公司 | Radio frequency front end and low noise amplifier thereof |
| CN116865696B (en) * | 2023-09-04 | 2023-12-15 | 四川益丰电子科技有限公司 | Low-power consumption high-gain low-noise differential amplifying circuit |
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