CN105281682A - Low-power-consumption bidirectional noise-reducing low-noise amplifier - Google Patents
Low-power-consumption bidirectional noise-reducing low-noise amplifier Download PDFInfo
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Abstract
The invention provides a low-power-consumption bidirectional noise-reducing low-noise amplifier and aims to provide the low-power-consumption bidirectional noise-reducing low-noise amplifier which has advantages of low noise coefficient, high reliability and stable gain, wherein the low-power-consumption bidirectional noise-reducing low-noise amplifier can eliminate a common-gate-tube channel thermal noise and reduce a common-source-tube channel thermal noise and a common-source-end load resistor thermal noise. The low-power-consumption bidirectional noise-reducing low-noise amplifier is realized through a technical solution which is characterized in that an impedance down-conversion network is parallelly connected with a common-source-electrode amplifying circuit with a feedback resistor through a common-gate-electrode amplifying circuit, thereby forming a single-end-input double-end-output low-noise amplifying circuit, wherein a common-gate-electrode input amplifying circuit is composed of an MOS tube M1, a serially connected MOS tube M3, and a load resistor R1 which is serially connected between the drain electrode of the MOS tube M3 and a power supply VDD. A common-source-electrode input amplifier circuit is composed of a capacitor C3 which is connected with the source electrode of an MOS tube M2, an MOS tube M4 which is serially connected with the MOS tube M2, a feedback resistor R3 which is parallelly connected between the gate electrode of the MOS tube M2 and the drain electrode of the MOS tube M4, and a load resistor R2 which is serially connected between the drain electrode of the MOS tube M4 and the power supply VDD.
Description
Technical field
The present invention relates to the radio frequency integrated low-noise amplifier in a kind of wireless communication field radio-frequency transmitter, particularly relate to a kind of low noise amplifier adopting two-way noise reduction technology.
Background technology
Low noise amplifier is the important component part of receiver in wireless telecommunication system, and the parameters such as its noise and gain directly affect the noise factor and the performance index such as sensitivity that pick and receive.In receiving system, it is always in the position of front end, mainly amplifies the small-signal that whole system receives, and reduces the interference of noise, govern the performance of whole receiving system.The noise characteristic of low noise amplifier to whole system plays a decisive role, and this just requires that its noise factor is the smaller the better.In order to suppress subsequent stages noise on the impact of system, also require that it has certain gain.Compared with base amplifier, low noise amplifier on the one hand can the signal of amplification system, ensures the normal operation of system works; The noise jamming of system can be reduced on the other hand, improve the sensitivity of system.Therefore, for low noise amplifier, emphasis be that requirement amplifier has extremely low noise factor can obtain certain gain again simultaneously, so just must get half-way house between noise and gain.The main performance index of low noise amplifier has noise factor, gain, input and output standing wave and the interior gain flatness of band etc.Wherein: 1. noise factor reflected signal is by the deterioration degree after low noise amplifier, always wish the smaller the better, be the index of LNA design most critical, the size of noise factor is mainly relevant with singal source resistance with the quiescent point of transistor, load resistance.2. wideband low noise amplifier is difficult to meet low noise requirement.3. low noise amplifier should have certain gain, and to suppress subsequent stages on the impact of system noise factor, but its gain should not be too large, avoids frequency mixer below to produce nonlinear distortion.4. gain flatness refers to the fluctuating of gain in working band, does not allow gain to have abrupt change.Low noise amplifier is as first active module embedded therein of most radio-frequency transmitter, and its effect can be described as very important.For the radio-frequency transmitter of broadband application, the low noise amplifier in a broadband is absolutely necessary.In the application of such as mobile terminal, low-power consumption is also an important need.And in the design of low noise amplifier, low-power consumption is the difficult point and focus instantly studied, particularly on the basis that guarantee bandwidth, noiseproof feature do not worsen, realize the circuit reducing power consumption.In miscellaneous amplifier circuit in low noise, the common grid low noise amplifier with low input impedance feature is one of routine selection of broadband Input matching; The degenerative common source low noise amplifier of strip resistance is also one of routine selection being usually applied to realize broadband Input matching.Although conventional Differential Input low noise amplifier can suppress common-mode noise well, in the designs, often need a Ba Lun converter, a single ended signal is converted to differential signal.When not adopting Ba Lun converter, traditional common grid-common source denoising structure low noise amplifier can realize single ended input, both-end exports, and meanwhile, the channel noise of bank tube is completely eliminated altogether.But for traditional common grid-common source denoising structure low noise amplifier, the electric current that directly will reduce common bank tube is difficult, because bank tube needs the input resistant matching providing 50 ohm altogether; Meanwhile, the transconductance value of common source pipe also needs to be set to a higher value, and can reach the effect suppressing its noise, but the electric current that common source pipe can be caused to consume like this is excessive, power consumption is too high.
Summary of the invention
The object of the invention is the weak point for existing low noise amplifier technology, there is provided a kind of noise factor low, reliability is high, gain stabilization, difference output can not only be provided for low noise amplifier, common bank tube channel noise can also be eliminated, the two-way noise reduction low noise amplifier of low-power consumption of common source pipe channel noise and common source end load resistance thermal noise can be reduced, to solve the high power problems receiving frequency range traditional grid-common source noise cancellation technology structure altogether in 1GHz to 2GHz scope.
In order to achieve the above object, the present invention adopts following technical scheme: the two-way noise reduction low noise amplifier of a kind of low-power consumption, comprise: impedance down conversion network, common gate amplifying circuit, it is characterized in that: impedance down conversion network by common gate amplifying circuit and the common source amplifying circuit of associated feedback resistance jointly form a single ended input, both-end export low noise amplifier circuit, wherein, common gate input amplifying circuit is made up of metal-oxide-semiconductor M1 series connection metal-oxide-semiconductor M3 and the load resistance R1 be connected between metal-oxide-semiconductor M3 drain electrode and power vd D thereof; Common source input amplifier circuit is by the electric capacity C3 series connection metal-oxide-semiconductor M2 connecting metal-oxide-semiconductor M2 source electrode, metal-oxide-semiconductor M2 series connection metal-oxide-semiconductor M4, be connected in parallel on metal-oxide-semiconductor M2 grid and metal-oxide-semiconductor M4 drain between feedback resistance R3, and be connected on metal-oxide-semiconductor M4 and drain and load resistance R2 between power vd D is formed; Impedance down conversion network is by metal-oxide-semiconductor M1 source series electric capacity C3 and metal-oxide-semiconductor M2 grid; The DC channel of common gate amplifying circuit and common source amplifying circuit is kept apart by electric capacity C3.
The present invention has following beneficial effect compared to prior art.
Low noise amplifier circuit of the present invention adopts common gate amplifying circuit, the two-way noise reduction technology that common source amplifying circuit is formed and power-saving technology, by reasonably selecting capacitance in input impedance down conversion network and inductance value, make, when the situation of more low-power consumption, 1GHz to 2GHz frequency range still can obtain good Input matching.
The present invention can by reasonably regulating the size of amplifier tube, feedback resistance and load resistance, and finally make the channel noise of common grid amplifier tube be completely eliminated, the channel noise of common source amplifier tube and the thermal noise of common source end load resistance are partly eliminated.
The present invention, by an impedance down conversion matching network, makes circuit still can have good Input matching performance when low-power consumption; The common gate input amplifier that metal-oxide-semiconductor M1 is formed and the common source input amplifier that metal-oxide-semiconductor M2 is formed, can not only provide difference output for low noise amplifier, can also eliminate the channel noise of metal-oxide-semiconductor M1; The negative feedback path that resistance R3 is formed can not only reduce input impedance, partly can also eliminate the channel noise of metal-oxide-semiconductor M2 and the thermal noise of resistance R2.
The present invention adopts impedance downconverter and increases the novel grid-common source low noise amplifier altogether of feedback resistance.By regulating the value of R1, R2 and R3, the channel noise of common bank tube M1 is completely eliminated, and the channel noise of common source pipe M2 and the thermal noise of R3 are partly eliminated.
The invention provides a kind of circuit realizing low-power consumption low noise amplifier in 1GHz to 2GHz frequency range.
Accompanying drawing explanation
Fig. 1 is the circuit structure block diagram of the two-way noise reduction low noise amplifier of low-power consumption of the present invention;
Fig. 2 is the circuit theory schematic diagram of Fig. 1.
Fig. 3 is a kind of way of realization of Fig. 1 input impedance down conversion network.
Fig. 4 is the Smith chart that Fig. 3 input impedance down conversion network converts common gate input impedance.
Fig. 5 is the input impedance rough schematic view of Fig. 1 common gate amplifying circuit and common source amplifying circuit.
Fig. 6 is the Input matching of the low noise amplifier of the two-way noise reduction of low-power consumption of the present invention, gain and noise factor simulation result.
Fig. 7 is the schematic diagram simplifying the two-way noise reduction low noise amplifier of low-power consumption.
Fig. 8 is simulation curve schematic diagram.
Embodiment:
Consult Fig. 1, Fig. 2.In the most preferred embodiment that following examples describe, the two-way noise reduction low noise amplifier of low-power consumption comprises: impedance down conversion network, the common source amplifying circuit of common gate amplifying circuit and band feedback resistance; Common gate amplifying circuit and the low noise amplifier circuit that common source amplifying circuit forms a single ended input jointly, both-end exports being with feedback resistance; Wherein, metal-oxide-semiconductor is N-type mos field effect transistor.The common source amplifying circuit of common gate input amplifying circuit and band feedback resistance all have employed cascode structure.Common gate input amplifying circuit is made up of metal-oxide-semiconductor M1 series connection metal-oxide-semiconductor M3 and the load resistance R1 be connected between metal-oxide-semiconductor M3 drain electrode and power vd D thereof; Common source input amplifier circuit is by the electric capacity C3 series connection metal-oxide-semiconductor M2 connecting metal-oxide-semiconductor M2 source electrode, metal-oxide-semiconductor M2 series connection metal-oxide-semiconductor M4, be connected in parallel on metal-oxide-semiconductor M2 grid and metal-oxide-semiconductor M4 drain between feedback resistance R3, and be connected on metal-oxide-semiconductor M4 and drain and load resistance R2 between power vd D is formed; Impedance down conversion network is by metal-oxide-semiconductor M1 source series electric capacity C3 and metal-oxide-semiconductor M2 grid; The DC channel of common gate amplifying circuit and common source amplifying circuit is kept apart by electric capacity C3.
The drain electrode of metal-oxide-semiconductor M1 connects the source electrode of metal-oxide-semiconductor M3, and radio frequency input signal forward amplifies.The grid of metal-oxide-semiconductor M1 is by the given bias voltage Vb1 of extra biasing circuit, the grid of metal-oxide-semiconductor M3 is by the given bias voltage Vb2 of extra biasing circuit, load resistance R1 mono-termination supply power voltage Vdd, the other end connects drain electrode and the radiofrequency signal forward amplification output RFout1 of metal-oxide-semiconductor M3.Electric capacity C3 one end connects the source electrode of metal-oxide-semiconductor M1, and the other end connects the grid of metal-oxide-semiconductor M2, the DC channel of common gate amplifying circuit with the common source amplifying circuit of band feedback resistance is kept apart.
Common source input amplifying circuit with feedback resistance comprises: the load resistance R2 connecting the metal-oxide-semiconductor M2 of electric capacity C3, source electrode and the metal-oxide-semiconductor M4 of metal-oxide-semiconductor M2 drain series, the feedback resistance R3 between the source electrode being connected in parallel on metal-oxide-semiconductor M4 and the drain electrode of metal-oxide-semiconductor NMOSM2 and a termination supply power voltage Vdd; Wherein, the grid of metal-oxide-semiconductor M2 connects electric capacity C3 and feedback resistance R3, resistance R3 one end connects the grid of electric capacity C3 and metal-oxide-semiconductor M4, drain electrode and the radiofrequency signal of other end contact resistance R2, metal-oxide-semiconductor M4 oppositely amplify output RFout2, and the grid of metal-oxide-semiconductor M4 is by the given bias voltage Vb2 of extra biasing circuit.The source ground of metal-oxide-semiconductor M2, radio frequency input signal oppositely amplifies.Resistance R3 is that the thermal noise of the channel noise and resistance R2 eliminating metal-oxide-semiconductor M2 provides a feedback network.
For the ease of understanding the relation between the power consumption of common gate amplifying circuit and input impedance, detailed derivation is done to the input impedance of M1 pipe and mutual conductance below:
1., by the approximate calculation of small-signal model, the source input impedance of metal-oxide-semiconductor M1 is provided by following formula:
Z
in＝1/g
m1
The overdrive voltage Vov1 of mutual conductance gm1, M1 pipe of 2.M1 pipe and the relation of raceway groove direct current I1 are provided by following formula:
g
m1＝2I
1/V
ov1
In formula: Zin represents input impedance, gm1 represents the mutual conductance of M1 pipe, and the raceway groove direct current of M1 pipe is flow through in I1 representative, and Vov1 represents the overdrive voltage of M1 pipe.In order to obtain high mutual conductance under limited direct current, the overdrive voltage value of M1 pipe has been set to a lower level.If keep overdrive voltage constant, so the mutual conductance of M1 pipe and raceway groove direct current are directly proportional.If input impedance Zin is 50 ohm, and driving voltage Vov1 is 100mV, and so corresponding direct current I1 is 1mA.If saving lower power consumption direct current, mutual conductance can be caused to reduce, and input impedance increases.In this case, in order to realize Input matching, just need to use impedance down conversion network.
Consult Fig. 3.Impedance down conversion network by the electric capacity of two L-types and inductor combination in series, resistance Rs is the internal resistance of signal source RFin.Impedance down conversion network by the electric capacity of two L-types and inductor combination in series, resistance Rs is the internal resistance of signal source RFin.Described impedance down conversion network comprises: electric capacity C1 in sequential series, electric capacity C2, the grounded inductor L1 being connected in parallel on electric capacity C2 two ends and grounded inductor L2, and inductance L 2 provides the DC channel on ground for common gate amplifying circuit.Common source input amplifying circuit and the parallel input impedance of the common source input amplifying circuit of band feedback resistance in the frequency range of 1GHz to 2GHz, can be transformed to the rank matched with resistance Rs in signal source by this impedance down conversion network.
Consult Fig. 4.By Smith chart, can the impedance transformation process of impedance down conversion network clearly described in exploded view 3.The internal resistance of putative signal source is 50 ohm of standard, and the input impedance 1/gm of common gate input amplifier is greater than 50 ohm, analyzes foregoing circuit when 1.5GHz.First, the input impedance of common gate input amplifier is also the load impedance of impedance down conversion network, corresponding to a point; Then, inductance L 2 is in parallel with common gate input amplifier, this process correspond on Smith chart from original point a along etc. conductance circle rotate reach new position b, rotation amount is determined by the susceptance of electric capacity; Next, then connect with electric capacity C2, this process corresponds to and reach a c from b point along waiting rotation of resistance circle on Smith chart; Next, more in parallel with inductance L 1, this process correspond on Smith chart from c point along etc. conductance justify rotation and reach a d; Finally, then connect with electric capacity C2, this process corresponds to and reach an e from d point along waiting rotation of resistance circle on Smith chart.This shows when 1.5GHz, and input impedance common gate amplifying circuit bigger than normal can mating by impedance down conversion real-time performance and 50 ohmic internal resistance signal sources.In order to easy description, the load impedance of impedance down conversion network and the ratio of 50 ohm are decided to be β.Simulating, verifying shows, during β ≈ 2, circuit shown in Fig. 3 still can achieve the broadband Input matching of 1GHz to 2GHz.
Consult Fig. 5.Conveniently input impedance calculates, and Fig. 5 eliminates cascode pipe M3, metal-oxide-semiconductor M4 and the capacitance C3 that can not have an impact to input impedance on the basis of Fig. 2.The input impedance of whole circuit is Zin.The input impedance of the common source amplifying circuit sys node of grid amplifying circuit and band negative feedback resistor is Zin1 altogether.Common source amplifying circuit with negative feedback resistor is that input impedance additionally provides an impedance Z in2 in parallel, is further reduced to make input impedance.Final common gate amplifying circuit and the input impedance of common source amplifying circuit are provided by formula below,
In formula: Zin represents input impedance, β is the load impedance of impedance down conversion network and the ratio of 50 ohm, and gm1 represents the mutual conductance of M1 pipe, and gm2 represents the mutual conductance of M2 pipe.For the ease of understanding the two-way noise reduction technology adopted in low-power consumption of the present invention two-way noise reduction amplifier circuit in low noise, below its principle is elaborated:
Consult Fig. 6.Conveniently noise analysis, Fig. 6 eliminates cascode pipe M3, metal-oxide-semiconductor M4 and the input matching network that can not have an impact to noise calculation on the basis of Fig. 2.The two-way noise reduction low noise amplifier of low-power consumption simplified, comprising: the common source amplifying circuit of common gate amplifying circuit and band feedback resistance.Common gate input amplifier circuit is made up of metal-oxide-semiconductor M1 and the load resistance R1 be connected between metal-oxide-semiconductor M1 drain electrode and power vd D thereof.Common source input amplifier circuit is made up of the series connection metal-oxide-semiconductor M2 and the load resistance R2 be connected between metal-oxide-semiconductor M2 drain electrode and power vd D thereof being connected in parallel on resistance R3 two ends.The channel noise electric current of metal-oxide-semiconductor M1 flows out from the source electrode of metal-oxide-semiconductor M1, at input B point generation noise voltage VnB of common grid amplifying circuit; VnB is amplified by common-gird circuit, produces a noise voltage VnA at the output node A of common grid amplifying circuit; Meanwhile, the channel noise electric current of equal M1 pipe flows out from the drain electrode of M1 pipe, produces a noise voltage VnC at the output node C of common source amplifying circuit; VnA and VnC has identical phase place.By regulating the size of each amplifier tube and resistance, noise voltage VnA and VnC can be made equal, thus the channel noise of M1 pipe is eliminated.
Consult Fig. 7.Conveniently noise analysis, Fig. 7 eliminates cascode pipe M3, the M4 and input matching network that can not have an impact to noise calculation on the basis of Fig. 2.The two-way noise reduction low noise amplifier of low-power consumption simplified, comprising: the common source amplifying circuit of common gate amplifying circuit and band feedback resistance.Common gate input amplifier circuit is made up of metal-oxide-semiconductor M1 and the load resistance R1 be connected between metal-oxide-semiconductor M1 drain electrode and power vd D thereof.Common source input amplifier circuit is made up of the series connection metal-oxide-semiconductor M2 and the load resistance R2 be connected between metal-oxide-semiconductor M2 drain electrode and power vd D thereof being connected in parallel on resistance R3 two ends.M2 pipe feeds back to Rs with the noise of R2 by R3, creates voltage noise VnD and the VnE of two same phases respectively at D place and E place, E point noise is amplified further by metal-oxide-semiconductor M1, create at F point and remain synchronous voltage noise VnF.The relation of VnD and VnF is provided by following formula.
Consult Fig. 8.Emulating display, in 1GHz to 2GHz bandwidth, the value of S21 is between 22.5dB and 23.5dB; S11 is less than-13dB; Noise factor NF is between 2.4dB and 2.8dB.
Claims (10)
1. the two-way noise reduction low noise amplifier of low-power consumption, comprise: impedance down conversion network, common gate amplifying circuit, it is characterized in that: impedance down conversion network by common gate amplifying circuit and the common source amplifying circuit of associated feedback resistance jointly form a single ended input, both-end export low noise amplifier circuit, wherein, common gate input amplifying circuit is made up of metal-oxide-semiconductor M1 series connection metal-oxide-semiconductor M3 and the load resistance R1 be connected between metal-oxide-semiconductor M3 drain electrode and power vd D thereof; Common source input amplifier circuit is by the electric capacity C3 series connection metal-oxide-semiconductor M2 connecting metal-oxide-semiconductor M2 source electrode, metal-oxide-semiconductor M2 series connection metal-oxide-semiconductor M4, be connected in parallel on metal-oxide-semiconductor M2 grid and metal-oxide-semiconductor M4 drain between feedback resistance R3, and be connected on metal-oxide-semiconductor M4 and drain and load resistance R2 between power vd D is formed; Impedance down conversion network is by metal-oxide-semiconductor M1 source series electric capacity C3 and metal-oxide-semiconductor M2 grid; The DC channel of common gate amplifying circuit and common source amplifying circuit is kept apart by electric capacity C3.
2. the two-way noise reduction low noise amplifier of low-power consumption according to claim 1, is characterized in that, the drain electrode of metal-oxide-semiconductor M1 connects the source electrode of metal-oxide-semiconductor M3, and radio frequency input signal forward amplifies.
3. the two-way noise reduction low noise amplifier of low-power consumption according to claim 1, is characterized in that, the grid of metal-oxide-semiconductor M1 by the grid of the given bias voltage Vb1 of biasing circuit, metal-oxide-semiconductor M3 by the given bias voltage Vb2 of extra biasing circuit.
4. the two-way noise reduction low noise amplifier of low-power consumption according to claim 1, is characterized in that, load resistance R1 mono-termination supply power voltage Vdd, and the other end connects drain electrode and the radiofrequency signal forward amplification output RFout1 of metal-oxide-semiconductor M3.
5. the two-way noise reduction low noise amplifier of low-power consumption according to claim 1, it is characterized in that, electric capacity C3 one end connects the source electrode of metal-oxide-semiconductor M1, and the other end connects the grid of metal-oxide-semiconductor M2, the DC channel of common gate amplifying circuit with the common source amplifying circuit of band feedback resistance is kept apart.
6. the two-way noise reduction low noise amplifier of low-power consumption according to claim 1, it is characterized in that, common source input amplifying circuit comprises: the load resistance R2 connecting the metal-oxide-semiconductor M2 of electric capacity C3, source electrode and the metal-oxide-semiconductor M4 of metal-oxide-semiconductor M2 drain series, the feedback resistance R3 between the source electrode being connected in parallel on metal-oxide-semiconductor M4 and the drain electrode of metal-oxide-semiconductor NMOSM2 and a termination supply power voltage Vdd; Wherein, the grid of metal-oxide-semiconductor M2 connects electric capacity C3 and feedback resistance R3, resistance R3 one end connects the grid of electric capacity C3 and metal-oxide-semiconductor M4, drain electrode and the radiofrequency signal of other end contact resistance R2, metal-oxide-semiconductor M4 oppositely amplify output RFout2, and the grid of metal-oxide-semiconductor M4 is by the given bias voltage Vb2 of extra biasing circuit.
7. the two-way noise reduction low noise amplifier of low-power consumption according to claim 1, it is characterized in that, the source ground of metal-oxide-semiconductor M2, radio frequency input signal oppositely amplifies.
8. the two-way noise reduction low noise amplifier of low-power consumption according to claim 1, it is characterized in that, anti-down conversion network comprises: electric capacity C1 in sequential series, electric capacity C2, the grounded inductor L1 being connected in parallel on electric capacity C2 two ends and grounded inductor L2, and inductance L 2 provides the DC channel on ground for common gate amplifying circuit; Common source input amplifying circuit and the parallel input impedance of the common source input amplifying circuit of band feedback resistance in the frequency range of 1GHz to 2GHz, can be transformed to the rank matched with resistance Rs in signal source by this impedance down conversion network.
9. the two-way noise reduction low noise amplifier of low-power consumption according to claim 1, is characterized in that, the input impedance of common gate amplifying circuit and common source amplifying circuit is provided by formula below,
In formula: Zin represents input impedance, β is the load impedance of impedance down conversion network and the ratio of 50 ohm, and gm1 represents the mutual conductance of M1 pipe, and gm2 represents the mutual conductance of M2 pipe.
10. the two-way noise reduction low noise amplifier of low-power consumption according to claim 1, is characterized in that, the channel noise electric current of M1 pipe flows out from the source electrode of M1 pipe, at input B point generation noise voltage VnB of common grid amplifying circuit; VnB is amplified by common-gird circuit, produces a noise voltage VnA at the output node A of common grid amplifying circuit; Meanwhile, the channel noise electric current of equal M1 pipe flows out from the drain electrode of M1 pipe, produces a noise voltage VnC at the output node C of common source amplifying circuit; VnA and VnC has identical phase place.
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| CN105763161A (en) * | 2016-01-29 | 2016-07-13 | 中国科学院上海微系统与信息技术研究所 | Low-noise amplifier for nuclear magnetic resonance imaging |
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| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
| CN112202408A (en) * | 2020-10-10 | 2021-01-08 | 西安博瑞集信电子科技有限公司 | Cascode radio frequency amplifier of GaN technology |
| CN112468099A (en) * | 2020-11-20 | 2021-03-09 | 北京昂瑞微电子技术股份有限公司 | Radio frequency front end and low noise amplifier thereof |
| CN116865696A (en) * | 2023-09-04 | 2023-10-10 | 四川益丰电子科技有限公司 | Low-power consumption high-gain low-noise differential amplifying circuit |
| CN116865696B (en) * | 2023-09-04 | 2023-12-15 | 四川益丰电子科技有限公司 | Low-power consumption high-gain low-noise differential amplifying circuit |
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