CN104883135A - Resistance-feedback noise-cancelling broadband low-nose transconductance amplifier - Google Patents
Resistance-feedback noise-cancelling broadband low-nose transconductance amplifier Download PDFInfo
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- CN104883135A CN104883135A CN201510221909.4A CN201510221909A CN104883135A CN 104883135 A CN104883135 A CN 104883135A CN 201510221909 A CN201510221909 A CN 201510221909A CN 104883135 A CN104883135 A CN 104883135A
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Abstract
The invention discloses a resistance-feedback noise-cancelling broadband low-nose transconductance amplifier and belongs to the field of integrated circuits. The amplifier is in an differential input/output structure and comprises a resistance-feedback input stage, a current mirror amplifying stage, a noise-canceling auxiliary stage, and a negative resistance stage; a radio frequency signal VRF+ is input through the resistance-feedback input stage and then divides into two signals; on a main path, one signal is converted into a current signal by an input tube and is then transmitted to an output node Iout+ after being amplified by a current mirror and multiplied by a negative resistance tube; on a noise-cancelling auxiliary path, the other signal is converted by a phase inverter into signal current transmitted to an output node Iout-; the two differential current signals are of equal amplitudes but opposite directions. The amplifier has the advantages that the gain of the amplifier can be evidently increased in a broader spectral range and noise and linear performances are improved.
Description
Technical field
The invention belongs to integrated circuit fields, particularly relate to a kind of low-noise trans-conductance amplifier.
Background technology
Along with the extensive use (such as 3-4G mobile communication, WIFI, and bluetooth etc.) of communications protocol numerous in GHz frequency band, the software and radio technique of compatible multi-protocols becomes ever more important.Accordingly, the research and development of wide band radio-frequency transmit-receive technology are become day by day urgent.Notice that the equal proportion along with CMOS technology is reduced, the linearity of CMOS transistor is but because supply voltage successively decreases and the degeneration of mobility and worsening simultaneously.
A very long time in past, circuit designers is got used to using voltage signal variable to carry out the characteristic of analysis and characterization circuit, i.e. a kind of circuit design technique theory based on voltage domain.Along with radio frequency integrated circuit operating frequency is more and more higher, at a high speed and in the applied environment of low-voltage and low-power dissipation, the shortcomings such as voltage-mode circuit can not tackle the process of circuit signal well, non-linear come out gradually.And be that the current-mode circuit that signal variable characterizes carrier can solve the bottleneck of voltage-mode circuit in speed, bandwidth, low pressure, low-power consumption with electric current.In recent years, the potential advantages of current-mode circuit in analog/mixed signal process are excavated just gradually, and promote the development based on the circuit design technique of current field work fast.At present, more representational as electric current mirror low noise amplifier with the circuit of current-mode work in field of radio frequency integrated circuits, electric current reversing frequency mixer etc.
Especially in recent years, the receiver rf front-end being component units with trsanscondutor, electric current reversing passive frequency mixer, has won extensive concern and the Innovation Input of academia and industrial circle with good noise, linear characteristic.As shown in Figure 1, this trsanscondutor is positioned at the first order of receiver, and its noise is most important, so the noise optimization problem in broadband becomes the primary difficult point of broadband reception technology.In addition, the acquisition of low noise can not exchange by large power consumption, because low-power consumption is the basic point of departure of chip design always.
Up to now, the designing technique of low noise amplifier has generally been used for reference to the research and development of low noise trsanscondutor.Typical Representative as shown in Figure 2, for the agro-industrial university in Dezhou uses the low noise trsanscondutor (H.M.Geddada amplified based on voltage domain of noise cancellation technique design, et.al., " Wide-band inductorless low-noise transconductance amp lifiers with high large-signal linearity; " IEEE trans.microwave theory and techn., vol.62, no.7,2014).This research achieves superior noiseproof feature, and good linear characteristic.But this circuit structure exists more Voltage-current conversion, constrain its linear properties.Also notice that the researcher of University of Macao directly uses NMOS, PMOS inverter structure of resistance feedback as trsanscondutor, (Zhicheng Lin as shown in Figure 3; Pui-In Mak; Martins, 1.4-mW 59.4-dB-SFDR 2.4-GHzZigBee/WPAN Receiver Exploiting a " Split-LNTA+50%LO " Topology in 65-nm CMOS, IEEEtrans.microwave theory and techn., Volume:62, Issue:7.2014).Notice that this structure exists the relation that is closely related of Input matching and noise, make to be difficult between two performances meet design requirement simultaneously.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of can obtain low noise figure, High Linear, have again the wideband low noise trsanscondutance amplifier of low-power consumption.
The present invention adopts following technological means to solve the problems of the technologies described above: as shown in Figure 4, a kind of resistance feedback formula noise eliminates wideband low noise trsanscondutance amplifier, its structure as shown in Figure 4, integrated circuit is mirror image, comprises the first resistance feedback common source input stage in specular and the second resistance feedback common source input stage, the first current mirror amplifying stage in specular and the second current mirror amplifying stage, the first negative resistance level in specular and the second negative resistance level, the first noise in specular eliminates compole and the second noise eliminates compole;
Described first resistance feedback common source input stage comprises nmos pass transistor M
n1, M
n2, current source transistor M
biasand feedback resistance R
f, the first current mirror amplifying stage comprises PMOS M
p4, M
p5, described first noise is eliminated compole and is comprised nmos pass transistor M
n3with PMOS transistor M
p3, described first negative resistance level comprises transistor M
p6; Described second resistance feedback common source input stage comprises nmos pass transistor M
n1', M
n2', current source transistor M
bias'with feedback resistance R
f', the second current mirror amplifying stage comprises PMOS transistor M
p4', M
p5', described second noise is eliminated compole and is comprised nmos pass transistor M
n3'with PMOS transistor M
p3', described second negative resistance level comprises transistor M
p6';
Described common source input transistors M
n1source ground, its grid is connected to resistance R by node A
fnegative terminal, its drain electrode is connected to feedback transistor M by Node B
n2grid;
NMOS tube M
n2source electrode be connected to resistance R
fanode and current source transistor M
biasdrain electrode, transistor M
biassource ground, NMOS tube M
n2drain electrode be connected to power supply V
dD;
Described NMOS tube M
n3source electrode be connected to ground, its grid is connected to node A, and its drain electrode is connected to PMOS M by node C
p3drain electrode; Described PMOS M
p3grid by capacitance C
bbe connected to node A, its source electrode is connected to power supply V
dD, power supply V
bfor M
p3bias voltage is provided;
Described PMOS M
p4drain electrode and grid be all connected to Node B, its source electrode is connected to power supply V
dD; Described PMOS M
p5grid be connected to Node B, its drain electrode is connected to the second noise by node C' and eliminates the NMOS tube M of compole
n3'drain electrode, its source electrode is connected to power supply V
dD;
Described transistor M
p6drain electrode be connected to Node B, its grid is connected to the transistor M of the second negative resistance level
p6'drain electrode, its source electrode is connected to power supply V
dD;
Described second resistance feedback common source input stage, the second current mirror amplifying stage, the second negative resistance level and the second noise eliminate the structure of compole and it is that the annexation of the corresponding construction of mirror image is identical, and node A', B', C' are respectively the specular node of node A, B, C;
As shown in Figure 5, the differential signal V of the low-noise trans-conductance amplifier after debiasing and capacitance is economized
in+ inputted by node A, then the signal of two-way is divided into flow to: on main path, be converted into current signal through the first resistance feedback input stage, then through the multiplication of the amplification of the first current mirror amplifying stage, the first negative resistance level, signal transmission to output node C'; On secondary path, signal V
in-inputted by node A', transfer signal code to through the second noise elimination compole and be delivered to output node C'; The signal code of two paths carries out in-phase stacking and produces output signal I
out+.In like manner, differential signal V
in-inputted by node A', then the signal of two-way is divided into flow to: on main path, be converted into current signal through the second resistance feedback input stage, then through the multiplication of the amplification of the second current mirror amplifying stage, the second negative resistance level, signal transmission to output node C; On secondary path, signal V
in+ inputted by node A, transfer signal code to through the first noise elimination compole and be delivered to output node C; The signal code of two paths carries out in-phase stacking and produces output signal I
out-; Thus, output common-mode signal I is obtained
out.
The noise elimination principle that a kind of resistance feedback formula of the present invention noise eliminates wideband low noise trsanscondutance amplifier can be understood in this way: as shown in Figure 5, M
n1channel noise produce the thermal noise voltage of forward in Node B, this noise voltage on main path, through current mirror M
p4, M
p5amplification and dynatron M
p6multiplication, noise voltage is reversed and is delivered to output node C'; The forward thermal noise voltage of B node is simultaneously through feedback transistor M
n2be delivered on secondary path, and through inverter M
n3, M
p3conversion, transfer reverse noise current to and be delivered to output node C; These two noise voltage signals are that constant amplitude is reverse, by getting two paths of differential signals, and M
n1channel noise eliminated at output port.
As the structure optimized, a kind of resistance feedback formula of the present invention noise is eliminated wideband low noise trsanscondutance amplifier and be further comprises common mode feedback circuit CMFB, and the input of this common mode feedback circuit is connected to node C, C'.By detecting output node I
outcommon-mode voltage, and and V
dDthe reference voltage V of/2
refcompare, the error signal obtained is to adjust M
n3gate bias voltage, make I
outstatic bias voltage be stabilized in V
dDnear/2, with the linear amplitude of oscillation obtained.And main circuit path is that the signal of current field amplifies, and signal not easily produces compression, the M in secondary path
n3for main nonlinear source, based on derivative principle of cancellation, use M
p3carry out partial offset M
n3non linear coefficient, and then promote the linearity of circuit.
The invention has the beneficial effects as follows:
The present invention under certain power consumption, significantly can reduce the noise figure of CMOS trsanscondutance amplifier, and possesses good linearity characteristic in broadband range; The noise elimination characteristic that the resistance feedback formula noise that the present invention proposes eliminates wideband low noise trsanscondutance amplifier makes this circuit have good noiseproof feature, its current field amplifies makes it to have the good linearity concurrently, the negative resistance technology adopted and current multiplexing techniques save circuit power consumption.
Accompanying drawing explanation
Fig. 1 is the receiver rf front-end schematic diagram be made up of trsanscondutor, electric current reversing passive frequency mixer;
Fig. 2 is the voltage domain low noise trsanscondutor schematic diagram based on noise cancellation technique;
Fig. 3 is the receiving front-end schematic diagram based on resistance feedback inverter trsanscondutor;
Fig. 4 is the schematic diagram that a kind of resistance feedback formula of the present invention noise eliminates wideband low noise trsanscondutance amplifier
Fig. 5 is the noise elimination schematic diagram that a kind of resistance feedback formula of the present invention noise eliminates wideband low noise trsanscondutance amplifier;
Fig. 6 is the gain results curve that a kind of resistance feedback formula of the present invention noise eliminates wideband low noise trsanscondutance amplifier;
Fig. 7 is the noise result curve that a kind of resistance feedback formula of the present invention noise eliminates wideband low noise trsanscondutance amplifier;
Fig. 8 is the IIP3 result figure that a kind of resistance feedback formula of the present invention noise eliminates wideband low noise trsanscondutance amplifier.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.
A kind of resistance feedback formula of the present invention noise eliminates wideband low noise trsanscondutance amplifier, and its structure as shown in Figure 4, comprises resistance feedback common source input stage, current mirror amplifying stage, negative resistance level, noise elimination compole.
Resistance feedback input stage Main Function obtains input resistant matching in broadband, and the major function of current mirror amplifying stage is amplified signal at current field.Meanwhile, negative resistance level doubles this amplification effectively, to reduce the power consumption of main path.In addition, noise eliminates compole, and for eliminating the noise of common source input pipe, it uses stacked structure to be beneficial to the realization of low-power consumption.By eliminating the small-signal analysis of wideband low noise trsanscondutance amplifier to resistance feedback formula noise, its transadmittance gain can be expressed as:
Wherein, g
mn1, g
mn3, g
mp3, g
mp4, g
mp6represent transistor M successively
n1, M
n3, M
p3, M
p4, M
p6mutual conductance, Parameter N is transistor M
p5with M
p4w/L proportionality coefficient.In order to the differential signal of satisfied balance exports, there is condition demand fulfillment below:
Can be seen by above formula, the introducing of negative resistance level, make the mutual conductance of common source input pipe, proportionality coefficient N can reduce, this low-power consumption for circuit has positive effect, and relevant theory deduction also shows that N is larger, and circuit power consumption is larger, although noise can improve.Input resistant matching condition is:
Wherein, R
sand R
ingenertor impedance and the input impedance of circuit respectively; g
mn2, R
frepresent transistor M successively
n2mutual conductance and feedback resistance; Because resistance feedback formula structure self possesses the feature in broadband, transistor M
n2introducing turn avoid the voltage gain that passive resistance negative feedback brings and degenerate.
The derivation of equation of circuit also shows, formula (2) is also transistor M
n1channel noise conditions to release; We also notice further, M
n2, M
p4, M
p5noise also can by this noise eliminate structure be able to part eliminate, finally make M
n3, M
p3for the main noise contributor of circuit, by designing large transconductance value, this noise contribution can be reduced to an acceptable level.Be similar to noise and eliminate principle, M
n1nonlinear component also eliminated.Current mirror M
p4, M
p5self has again the superior linearity, makes noise eliminate the non-linear Main Bottleneck for restriction circuit linearity degree of compole.By to transistor M
n3m
p3carry out the Taylor expansion analysis of signal code, as follows:
i
n＝g
n1(υ
i)+g
n2(υ
i)
2+g
n3(υ
i)
3(4)
i
p＝g
p1(-υ
i)+g
p2(-υ
i)
2+g
p3(-υ
i)
3(5)
Wherein, v
iinput signal, g
n1 ~ 3represent M successively
n3single order, second order, three rank items; g
p1 ~ 3represent M successively
p3single order, second order, three rank items, so output current signal is:
Adjustment M
p3bias voltage, M
n3second order, third-order non-linear item can partly eliminate, the linearity is improved.
Embodiment
The LNTA circuit that the present embodiment provides adopts 0.18 μm of RF CMOS technology to realize, and adopts 1.8V Power supply, parameter R
fbe 240 Ω, Parameter N gets 2, and the bias current of circuit is 14mA.Fig. 6 gives LNTA gain curve, and show the transadmittance gain obtaining about 41.2mS in three dB bandwidth (0.1 ~ 1.5GHz), Fig. 7 gives noise figure result, and in the bandwidth of 0.1 ~ 1.5GHz, its noise figure NF is about 2.6dB.Adopt the constant amplitude two-tone signal of interval 5MHz respectively in the linearity of 1GHz frequency test low noise amplifier, as shown in Figure 8, its input third order intermodulation (IIP3) simulation result is-5.5dBm.Above result shows, this LNTA is under 1.8V condition of power supply, and operating current is 14mA, compares with existing low noise amplifier, and this amplifier easily realizes low-voltage and low-power consumption application.
Claims (5)
1. a resistance feedback formula noise eliminates wideband low noise trsanscondutance amplifier, integrated circuit structure is mirror image, it is characterized in that, comprise the first resistance feedback common source input stage in specular and the second resistance feedback common source input stage, the first current mirror amplifying stage in specular and the second current mirror amplifying stage, the first negative resistance level in specular and the second negative resistance level, the first noise in specular eliminates compole and the second noise eliminates compole;
Differential signal V
in+ inputted by the first resistance feedback common source input stage, then the signal of two-way is divided into flow to: on main path, current signal is converted into through the first resistance feedback common source input stage, then, after the multiplication of the amplification of the first current mirror amplifying stage, the first negative resistance level, signal transmission is to output node C'; On secondary path, signal V
in-inputted by the second resistance feedback common source input stage, transfer signal code to through the second noise elimination compole and be delivered to output node C'; The signal code of two paths carries out in-phase stacking and produces output signal I
out+;
Differential signal V
in-inputted by the second resistance feedback common source input stage, then the signal of two-way is divided into flow to: on main path, current signal is converted into through the second resistance feedback common source input stage, then, after the multiplication of the amplification of the second current mirror amplifying stage, the second negative resistance level, signal transmission is to output node C; On secondary path, signal V
in+ inputted by the first resistance feedback common source input stage, transfer signal code to through the first noise elimination compole and be delivered to output node C; The signal code of two paths carries out in-phase stacking and produces output signal I
out-; Thus, output common-mode signal I is obtained
out.
2. resistance feedback formula noise according to claim 1 eliminates wideband low noise trsanscondutance amplifier, and it is characterized in that, described first resistance feedback common source input stage comprises nmos pass transistor M
n1, M
n2, current source transistor M
biasand feedback resistance R
f; Described second resistance feedback common source input stage comprises nmos pass transistor M
n1', M
n2', current source transistor M
bias'with feedback resistance R
f';
Described common source input transistors M
n1source ground, its grid is connected to resistance R by node A
fnegative terminal, its drain electrode is connected to feedback transistor M by Node B
n2grid; NMOS tube M
n2source electrode be connected to resistance R
fanode and current source transistor M
biasdrain electrode, transistor M
biassource ground, NMOS tube M
n2drain electrode be connected to power supply V
dD.
3. resistance feedback formula noise according to claim 2 eliminates wideband low noise trsanscondutance amplifier, it is characterized in that, described first noise is eliminated compole and comprised nmos pass transistor M
n3with PMOS transistor M
p3; Described second noise is eliminated compole and is comprised nmos pass transistor M
n3'with PMOS transistor M
p3';
Described NMOS tube M
n3source ground, its grid is connected to node A, and its drain electrode is connected to PMOS M by node C
p3drain electrode; Described PMOS M
p3grid by capacitance C
bbe connected to node A, its source electrode is connected to power supply V
dD, power supply V
bfor M
p3bias voltage is provided.
4. resistance feedback formula noise according to claim 3 eliminates wideband low noise trsanscondutance amplifier, and it is characterized in that, described first current mirror amplifying stage comprises PMOS transistor M
p4, M
p5, described first negative resistance level comprises transistor M
p6; Second current mirror amplifying stage comprises PMOS transistor M
p4', M
p5', described second negative resistance level comprises transistor M
p6';
Described PMOS transistor M
p4drain electrode and grid be all connected to Node B, its source electrode is connected to power supply V
dD; Described PMOS M
p5grid be connected to Node B, its drain electrode is connected to the second noise by node C' and eliminates the NMOS tube M of compole
n3'drain electrode, its source electrode is connected to power supply V
dD; Described transistor M
p6drain electrode be connected to Node B, its grid is connected to the transistor M of the second negative resistance level
p6'drain electrode, its source electrode is connected to power supply V
dD;
Described second resistance feedback common source input stage, the second current mirror amplifying stage, the second negative resistance level and the second noise eliminate each device annexation of compole and it is that the annexation of the corresponding construction of mirror image is identical; Differential signal V
in+ inputted by node A, differential signal V
in-inputted by node A'.
5. resistance feedback formula noise according to claim 4 eliminates wideband low noise trsanscondutance amplifier, and it is characterized in that, also comprise common mode feedback circuit CMFB, the input of described common mode feedback circuit is connected to node C, C'; By detecting output node signal I
outcommon-mode voltage, and with reference voltage V
ref=V
dD/ 2 compare, and the error signal obtained is for adjusting M
n3gate bias voltage, make common-mode signal I
outstatic bias voltage be stabilized in V
dDnear/2, with the linear amplitude of oscillation obtained.
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| CN106100657A (en) * | 2016-05-24 | 2016-11-09 | 东南大学 | A kind of automatically adjusted obstruction inhibiting rate receiving radio frequency front end based on aliasing filtering |
| CN107222227A (en) * | 2017-06-28 | 2017-09-29 | 中国科学技术大学 | A kind of receiver rf front-end with digital assistant circuit |
| CN109309480A (en) * | 2018-10-29 | 2019-02-05 | 电子科技大学 | A kind of low noise switched transconductor mixer |
| CN111262537A (en) * | 2020-03-24 | 2020-06-09 | 佛山中科芯蔚科技有限公司 | Transconductance amplifier |
| CN111740706A (en) * | 2020-08-17 | 2020-10-02 | 成都嘉纳海威科技有限责任公司 | Broadband high-linearity driving amplifier of 5G system |
| CN112383280A (en) * | 2020-11-27 | 2021-02-19 | 成都信息工程大学 | Ku-waveband low-power-consumption CMOS low-noise amplifier circuit |
| CN112491371A (en) * | 2020-11-26 | 2021-03-12 | 北京百瑞互联技术有限公司 | High-linearity programmable AB-C mixed transconductance low-noise transconductance amplifier |
| CN113328710A (en) * | 2021-06-11 | 2021-08-31 | 上海川土微电子有限公司 | High-linearity cross-conducting circuit |
| CN113794450A (en) * | 2021-08-10 | 2021-12-14 | 复旦大学 | Broadband high-linearity low-noise amplifier adopting linearity optimization technology |
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| CN106100657A (en) * | 2016-05-24 | 2016-11-09 | 东南大学 | A kind of automatically adjusted obstruction inhibiting rate receiving radio frequency front end based on aliasing filtering |
| CN106100657B (en) * | 2016-05-24 | 2018-04-03 | 东南大学 | It is a kind of that obstruction inhibiting rate receiving radio frequency front end is automatically adjusted based on aliasing filtering |
| CN107222227A (en) * | 2017-06-28 | 2017-09-29 | 中国科学技术大学 | A kind of receiver rf front-end with digital assistant circuit |
| CN107222227B (en) * | 2017-06-28 | 2019-04-26 | 中国科学技术大学 | A kind of receiver rf front-end with digital assistant circuit |
| CN109309480A (en) * | 2018-10-29 | 2019-02-05 | 电子科技大学 | A kind of low noise switched transconductor mixer |
| CN111262537A (en) * | 2020-03-24 | 2020-06-09 | 佛山中科芯蔚科技有限公司 | Transconductance amplifier |
| CN111740706A (en) * | 2020-08-17 | 2020-10-02 | 成都嘉纳海威科技有限责任公司 | Broadband high-linearity driving amplifier of 5G system |
| CN112491371A (en) * | 2020-11-26 | 2021-03-12 | 北京百瑞互联技术有限公司 | High-linearity programmable AB-C mixed transconductance low-noise transconductance amplifier |
| CN112491371B (en) * | 2020-11-26 | 2024-03-22 | 北京百瑞互联技术股份有限公司 | High-linearity programmable AB-C class mixed transconductance low-noise transconductance amplifier |
| CN112383280A (en) * | 2020-11-27 | 2021-02-19 | 成都信息工程大学 | Ku-waveband low-power-consumption CMOS low-noise amplifier circuit |
| CN112383280B (en) * | 2020-11-27 | 2023-07-04 | 成都信息工程大学 | Ku-band low-power-consumption CMOS low-noise amplifier circuit |
| CN113328710A (en) * | 2021-06-11 | 2021-08-31 | 上海川土微电子有限公司 | High-linearity cross-conducting circuit |
| CN113328710B (en) * | 2021-06-11 | 2023-09-12 | 上海川土微电子有限公司 | High-linearity transconductance circuit |
| CN113794450A (en) * | 2021-08-10 | 2021-12-14 | 复旦大学 | Broadband high-linearity low-noise amplifier adopting linearity optimization technology |
| CN113794450B (en) * | 2021-08-10 | 2024-03-29 | 复旦大学 | Broadband high-linearity low-noise amplifier adopting linearity optimization technology |
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