CN101888210A - Variable gain low-noise amplifier - Google Patents
Variable gain low-noise amplifier Download PDFInfo
- Publication number
- CN101888210A CN101888210A CN2010102293776A CN201010229377A CN101888210A CN 101888210 A CN101888210 A CN 101888210A CN 2010102293776 A CN2010102293776 A CN 2010102293776A CN 201010229377 A CN201010229377 A CN 201010229377A CN 101888210 A CN101888210 A CN 101888210A
- Authority
- CN
- China
- Prior art keywords
- input
- noise amplifier
- variable gain
- input pipe
- gain low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Control Of Amplification And Gain Control (AREA)
- Amplifiers (AREA)
Abstract
The invention relates to a variable gain low-noise amplifier which comprises an output pipe, an input matching inductance, a source electrode negative feedback inductance and a plurality of input pipes, wherein a grid electrode of the output pipe is connected with power supply voltage, and a drain electrode thereof is connected with an output end of an amplifier; an input end of the input matching inductance is an input end of the amplifier; an output end of the source electrode negative feedback inductance is grounding; a drain electrode of each input pipe is connected with a source electrode of the output pipe; a grid electrode of each input pipe is connected with a capacitor and then is connected with an output end of the input matching inductance; the grid electrode of each input pipe is connected with an input end of a resistance, and a bias voltage end is formed at an output end of each resistance; and a source electrode of each input pipe is connected with an input end of the source electrode negative feedback inductance. The variable gain low-noise amplifier can adjust the gain, and has the advantages of low noise, high gain and low power consumption.
Description
Technical field
The present invention relates to low noise amplifier, relate in particular to a kind of variable gain low-noise amplifier.
Background technology
Over past ten years, along with the development of WLAN (wireless local area network), bluetooth and Wi-Fi, the module of 2.4GHzISM frequency range and system are also more and more, have brought a lot of convenience to live and work.(Low-Noise Amplifier, LNA) as the key modules of radio-frequency front-end, its performance is to the whole system decisive role for low noise amplifier.
Low noise amplifier requires to have the more low noise while can provide certain gain again, thereby suppresses the noise of subsequent module such as frequency mixer.The parameter of describing the low noise amplifier performance mainly contains: voltage gain, input loss, output loss, reverse isolation degree, the linearity and noise, because these parameters are interrelated, mutual restriction, therefore the overall performance that adopts which kind of compromise proposal to improve low noise amplifier has become the main difficult point of design.
Recent years, the cascodes of band source class inductor degeneration becomes the selection of most of low noise amplifiers, the low noise amplifier combination property of this structure is better, and its typical index is: voltage gain 15dB, noise factor 3dB, input and output coupling is all less than-10dB.
Referring to Fig. 1, the low noise amplifier of prior art comprises two field effect transistor M 1 and M4, three capacitor C
In, C
OutAnd C
d, three inductance L
g, L
sAnd L
d, and biasing resistor R
bThe drain electrode of described field effect transistor M 4 connects described inductance L
d, described inductance L
dAnother termination power vd D, the grid of described field effect transistor M 4 meets supply voltage VDD, the source electrode of described field effect transistor M 4 is connected with the drain electrode of described field effect transistor M 1; Signal input part V
InConnect described inductance L successively
gAnd capacitor C
InThe grid of described field effect transistor M 1 is inserted in the back; Described capacitor C
OutBe connected on the drain electrode and the signal output part V of described field effect transistor M 4
OutBetween; Described capacitor C
dBe connected between the drain electrode and ground of described field effect transistor M 4; Described inductance L
sBe connected between the source electrode and ground of described field effect transistor M 1; Described biasing resistor R
bBe connected on the grid and the biased electrical pressure side V of described field effect transistor M 1
bBetween.
The shortcoming of the low noise amplifier of prior art is, the gain of low noise amplifier is fixed, and still, in some application systems, requires radio-frequency front-end partly to realize Gain Adjustable, and the low noise amplifier of prior art just can't be applied in such system.
Summary of the invention
The object of the present invention is to provide a kind of variable gain low-noise amplifier, the Gain Adjustable of this low noise amplifier.
To achieve the above object, the invention provides a kind of variable gain low-noise amplifier, comprise efferent duct, input coupling inductance, source negative feedback inductor and a plurality of input pipe, the grid of described efferent duct connects supply voltage, the drain electrode of described efferent duct connects the output of this amplifier, the input of described input coupling inductance is this amplifier input terminal, the output head grounding of described source negative feedback inductor, and the drain electrode of each input pipe is connected with the source electrode of described efferent duct; The grid of each input pipe is connected with the output of described input coupling inductance after connecting an electric capacity; The grid of each input pipe is connected with the input of a resistance, and the output of each described resistance forms a biased electrical pressure side; The source electrode of each input pipe is connected with the input of described source negative feedback inductor.
Above-mentioned variable gain low-noise amplifier wherein, by applying different bias voltages in different described biased electrical pressure sides, changes the operating state of each input pipe, realizes Gain Adjustable.
Above-mentioned variable gain low-noise amplifier, wherein, the resistance of each resistance that is connected with the grid of described input pipe equates.
Above-mentioned variable gain low-noise amplifier, wherein, the capacitance of each electric capacity that is connected with the grid of described input pipe equates.
Above-mentioned variable gain low-noise amplifier, wherein, the standard operation voltage of described a plurality of input pipes equates.
Above-mentioned variable gain low-noise amplifier wherein, is characterized in that, comprises 3 input pipes.
Above-mentioned variable gain low-noise amplifier, wherein, the gain-adjusted scope of described variable gain low-noise amplifier is 11～18dB.
Variable gain low-noise amplifier of the present invention is provided with a plurality of input pipes, and each input pipe has independently biased electrical pressure side by biasing resistor, and each input pipe is provided with independently imports capacitance, the electric L of input coupling
gParticipate in work simultaneously with source negative feedback inductor, can realize the Gain Adjustable of low noise amplifier, and the noise of variable gain low-noise amplifier of the present invention is low, the gain high, power consumption is little by the operating state that makes up each input pipe.
Description of drawings
Variable gain low-noise amplifier of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is the circuit diagram of the low noise amplifier of prior art.
Fig. 2 is the circuit diagram of variable gain low-noise amplifier one preferred embodiment of the present invention.
Embodiment
Below with reference to Fig. 2 variable gain low-noise amplifier of the present invention is described in further detail.
Variable gain low-noise amplifier of the present invention comprises efferent duct, input coupling inductance, source negative feedback inductor and a plurality of input pipe, and the drain electrode of each input pipe is connected with the source electrode of described efferent duct; The grid of each input pipe is connected with the output of described input coupling inductance after connecting an electric capacity; The grid of each input pipe is connected with the input of a resistance, and the output of each described resistance forms a biased electrical pressure side; The source electrode of each input pipe is connected with the input of described source negative feedback inductor.
Variable gain low-noise amplifier of the present invention is set up input pipe, has realized the Gain Adjustable of low noise amplifier, and this variable gain low-noise amplifier has low noise, gain height and the little advantage of power consumption.
Variable gain low-noise amplifier of the present invention can be applicable to the front end of RX path, is used for amplifying radiofrequency signal, also can be applicable to the front end of transmission path, is used for the driving power amplifier.
Now variable gain low-noise amplifier of the present invention is described with a specific embodiment:
Referring to Fig. 2, the variable gain low-noise amplifier of present embodiment comprises three input pipe M1, M2 and M3, an efferent duct M4, five capacitor C
In1, C
In2, C
In3, C
OutAnd C
d, input coupling inductance L
g, source negative feedback inductor L
s, inductance L
d, and three resistance R
B1, R
B2And R
B3
Described input pipe M1, M2 and M3, and described efferent duct M4 is field-effect transistor;
Described capacitor C
In1, C
In2And C
In3All can be described as the input capacitance;
Described resistance R
B1, R
B2And R
B3All can be described as biasing resistor;
The drain electrode of described efferent duct M4 and described inductance L
dConnect this inductance L
dThe other end connect supply voltage VDD;
The grid of described efferent duct M4 connects supply voltage VDD;
The drain electrode of the drain electrode of the drain electrode of described input pipe M1, input pipe M2 and input pipe M3 all is connected with the source electrode of described efferent duct M4;
The source electrode of the source electrode of the source electrode of described input pipe M1, input pipe M2 and input pipe M3 all with described source negative feedback inductor L
sAn end connect described source negative feedback inductor L
sOther end ground connection;
The grid of described input pipe M1 and described capacitor C
In1Connect the grid of described input pipe M2 and described capacitor C
In2Connect the grid of described input pipe M3 and described capacitor C
In2Connect described capacitor C
In1The other end, capacitor C
In2The other end and capacitor C
In2The other end all with described input coupling inductance L
gConnect this input coupling inductance L
gThe other end be the signal input part V of present embodiment variable gain low-noise amplifier
In
Described resistance R
B1An end be connected this resistance R with the grid of described input pipe M1
B1The other end be the biased electrical pressure side V of a described input pipe M1 of variable gain low-noise amplifier of the present invention
B1, at this biased electrical pressure side V
B1Apply the operating state that bias voltage can change described input pipe M1;
Described resistance R
B2An end be connected this resistance R with the grid of described input pipe M2
B2The other end be the biased electrical pressure side V of described input pipe M2
B2, at this biased electrical pressure side V
B2Apply the operating state that bias voltage can change described input pipe M2;
Described resistance R
B3An end be connected this resistance R with the grid of described input pipe M3
B3The other end be the biased electrical pressure side V of described input pipe M3
B3, at this biased electrical pressure side V
B3Apply the operating state that bias voltage can change described input pipe M3;
Described capacitor C
dAn end be connected this capacitor C with the drain electrode of described efferent duct M4
dOther end ground connection;
Described capacitor C
OutAn end be connected this electric capacity capacitor C with the drain electrode of described efferent duct M4
OutThe other end be the signal output part V of present embodiment variable gain low-noise amplifier
Out
The present embodiment variable gain low-noise amplifier increases by two input pipe M2 and M3 on the basis of the low noise amplifier of prior art, each input pipe that increases newly has independently biased electrical pressure side by biasing resistor, each input pipe that increases newly is provided with independently imports capacitance, input coupling inductance L
gWith source negative feedback inductor L
sParticipate in work simultaneously.
In the present embodiment, the breadth length ratio of described input pipe M1 (ratio of the wide and length of field-effect transistor conducting channel) is 75um/0.18um, the breadth length ratio of described input pipe M2 is 100um/0.18um, the breadth length ratio of described input pipe M3 is 50um/0.18um, and the breadth length ratio of described field effect transistor M 4 is 80um/0.18um;
Described inductance L
gInductance value be 7.48nH, described inductance L
sInductance value be 0.666nH, described inductance L
dInductance value be 6.14nH;
Described capacitor C
In1Capacitance be 1.02pF, described capacitor C
In2Capacitance be 1.02pF, described capacitor C
In3Capacitance be 1.02pF, described capacitor C
dCapacitance be 0.128pF, described capacitor C
OutCapacitance be 0.384pF;
Described resistance R
B1Resistance be 2.38k Ω, described resistance R
B2Resistance be 2.38k Ω, described resistance R
B3Resistance be 2.38k Ω;
Supply voltage VDD is 1.8V;
Described biased electrical pressure side V
B1, biased electrical pressure side V
B2, and biased electrical pressure side V
B3Standard operation voltage be 0.6V, when promptly needing described input pipe M1 work, at described biased electrical pressure side V
B1Apply the bias voltage of 0.6V, when needing described input pipe M2 to work, at described biased electrical pressure side V
B2Apply the bias voltage of 0.6V, when needing described input pipe M3 to work, at described biased electrical pressure side V
B3Apply the bias voltage of 0.6V; As described biased electrical pressure side V
B1Voltage when being 0V, described input pipe M1 does not participate in work, as described biased electrical pressure side V
B2Voltage when being 0V, described input pipe M2 does not participate in work, as described biased electrical pressure side V
B3Voltage when being 0V, described input pipe M3 does not participate in work;
Make up the operating state of described input pipe M1, input pipe M2 and input pipe M3, the gain of scalable present embodiment variable gain low-noise amplifier, as shown in table 1, table 1 has shown the gain of present embodiment variable gain low-noise amplifier and the relation of each field-effect transistor operating state:
Table 1
As known from Table 1,8 grades of the gain of present embodiment variable gain low-noise amplifier realizations are adjustable, and adjustable range is 11～18dB.
With described input pipe M1 work is example, i.e. V
B1=0.6V, V
B2=V
B3=0V illustrates the operation principle of present embodiment variable gain low-noise amplifier: at described biased electrical pressure side V
B1Apply the bias voltage of 0.6V, and described biased electrical pressure side V
B2And biased electrical pressure side V
B3All ground connection at this moment, has only described input pipe M1 to participate in work, and described input pipe M2 and input pipe M3 all do not work, described inductance L
gAnd inductance L
sThe input that is operated in 2.4GHz coupling is provided, and input impedance is:
Wherein, Z
mThe input impedance of the variable gain low-noise amplifier of expression present embodiment, L
sRepresent described inductance L
gInductance value, s represents to get described inductance L
gThe inductance value real part, C
Gs1The grid capacitance of representing described input pipe M1, g
M1Represent the mutual conductance of described input pipe M1;
Output impedance is:
Wherein, Z
LThe output impedance of the variable gain low-noise amplifier of expression present embodiment, L
dRepresent described inductance L
dInductance value, s represents to get described inductance L
dThe inductance value real part, C
LTotal parasitic capacitance value of representing the drain electrode of described efferent duct M4; Described input pipe M1 and efferent duct M4 are operated in saturation condition, and input signal (voltage signal) is from signal input part V
InInput converts current signal to through described input pipe M1, and this current signal is through the overload (not shown), in little voltage swing of drain electrode formation of described efferent duct M4, from signal output part V
OutOutput signal output (voltage signal).
Experiment shows, the variable gain low-noise amplifier of present embodiment is under effective 7 kinds of operating states, noise factor is between 2.5-3.5dB, input and output couplings at the 2.4GHz place all less than-15dB, the maximum power dissipation of amplifier is 9mW, and minimum power consumption is 2.25mW, and supply voltage VDD is 1.8V, as seen, the variable gain low-noise amplifier of present embodiment has compromise preferably at aspects such as gain, noise and power consumptions.
Claims (7)
1. variable gain low-noise amplifier, comprise efferent duct, input coupling inductance and source negative feedback inductor, the grid of described efferent duct connects supply voltage, the drain electrode of described efferent duct connects the output of this amplifier, the input of described input coupling inductance is this amplifier input terminal, and the output head grounding of described source negative feedback inductor is characterized in that, also comprise a plurality of input pipes, the drain electrode of each input pipe is connected with the source electrode of described efferent duct; The grid of each input pipe is connected with the output of described input coupling inductance after connecting an electric capacity; The grid of each input pipe is connected with the input of a resistance, and the output of each described resistance forms a biased electrical pressure side; The source electrode of each input pipe is connected with the input of described source negative feedback inductor.
2. variable gain low-noise amplifier as claimed in claim 1 is characterized in that, by applying different bias voltages in different described biased electrical pressure sides, changes the operating state of each input pipe, realizes Gain Adjustable.
3. variable gain low-noise amplifier as claimed in claim 2 is characterized in that, the resistance of each resistance that is connected with the grid of described input pipe equates.
4. variable gain low-noise amplifier as claimed in claim 2 is characterized in that, the capacitance of each electric capacity that is connected with the grid of described input pipe equates.
5. variable gain low-noise amplifier as claimed in claim 2 is characterized in that, the standard operation voltage of described a plurality of input pipes equates.
6. as the described variable gain low-noise amplifier of arbitrary claim in the claim 1～5, it is characterized in that, comprise 3 input pipes.
7. variable gain low-noise amplifier as claimed in claim 6 is characterized in that, the gain-adjusted scope of described variable gain low-noise amplifier is 11～18dB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102293776A CN101888210A (en) | 2010-07-16 | 2010-07-16 | Variable gain low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102293776A CN101888210A (en) | 2010-07-16 | 2010-07-16 | Variable gain low-noise amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101888210A true CN101888210A (en) | 2010-11-17 |
Family
ID=43073965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102293776A Pending CN101888210A (en) | 2010-07-16 | 2010-07-16 | Variable gain low-noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101888210A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102291814A (en) * | 2011-04-25 | 2011-12-21 | 上海信朴臻微电子有限公司 | Radio frequency (RF) automatic gain control (AGC) system and method thereof |
| CN102780456A (en) * | 2011-05-11 | 2012-11-14 | 上海华虹集成电路有限责任公司 | Low noise amplifier |
| CN102983818A (en) * | 2012-11-23 | 2013-03-20 | 上海集成电路研发中心有限公司 | Low-noise amplifier |
| CN103457550A (en) * | 2012-05-30 | 2013-12-18 | 上海无线通信研究中心 | Radio-frequency power amplifier and mobile terminal thereof |
| CN103580615A (en) * | 2013-10-22 | 2014-02-12 | 中国科学院半导体研究所 | Signal amplification circuit |
| CN104300918A (en) * | 2014-10-17 | 2015-01-21 | 绵阳雷迪创微电子科技有限公司 | Low-noise amplifier circuit |
| CN104796090A (en) * | 2013-12-16 | 2015-07-22 | 晨星半导体股份有限公司 | Variable gain low-noise amplifier |
| CN104917475A (en) * | 2015-02-15 | 2015-09-16 | 上海唯捷创芯电子技术有限公司 | Adjustable gain power amplifier, gain adjusting method and mobile terminal |
| CN109167576A (en) * | 2018-06-13 | 2019-01-08 | 上海艾为电子技术股份有限公司 | Low-noise amplifier and electronic equipment |
| CN113162564A (en) * | 2021-03-25 | 2021-07-23 | 成都知融科技股份有限公司 | CMOS power amplifier with on-chip temperature compensation function |
| CN113746442A (en) * | 2021-11-05 | 2021-12-03 | 成都明夷电子科技有限公司 | Low-voltage high-linearity cascode amplifier |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1841923A (en) * | 2005-03-29 | 2006-10-04 | 因特格瑞特科技有限公司 | Low noise amplifier and differential amplifier with variable gain mode |
| CN101022266A (en) * | 2006-09-28 | 2007-08-22 | 威盛电子股份有限公司 | Power amplifier |
| WO2009016716A1 (en) * | 2007-07-30 | 2009-02-05 | Fujitsu Limited | Amplifier circuit |
| US20090189696A1 (en) * | 2008-01-25 | 2009-07-30 | National Taiwan University | Low-noise amplifier |
-
2010
- 2010-07-16 CN CN2010102293776A patent/CN101888210A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1841923A (en) * | 2005-03-29 | 2006-10-04 | 因特格瑞特科技有限公司 | Low noise amplifier and differential amplifier with variable gain mode |
| CN101022266A (en) * | 2006-09-28 | 2007-08-22 | 威盛电子股份有限公司 | Power amplifier |
| WO2009016716A1 (en) * | 2007-07-30 | 2009-02-05 | Fujitsu Limited | Amplifier circuit |
| US20090189696A1 (en) * | 2008-01-25 | 2009-07-30 | National Taiwan University | Low-noise amplifier |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102291814A (en) * | 2011-04-25 | 2011-12-21 | 上海信朴臻微电子有限公司 | Radio frequency (RF) automatic gain control (AGC) system and method thereof |
| CN102780456A (en) * | 2011-05-11 | 2012-11-14 | 上海华虹集成电路有限责任公司 | Low noise amplifier |
| CN103457550A (en) * | 2012-05-30 | 2013-12-18 | 上海无线通信研究中心 | Radio-frequency power amplifier and mobile terminal thereof |
| CN103457550B (en) * | 2012-05-30 | 2017-12-26 | 上海无线通信研究中心 | Radio-frequency power amplifier and its mobile terminal |
| CN102983818A (en) * | 2012-11-23 | 2013-03-20 | 上海集成电路研发中心有限公司 | Low-noise amplifier |
| CN103580615B (en) * | 2013-10-22 | 2016-06-29 | 中国科学院半导体研究所 | Signal amplification circuit |
| CN103580615A (en) * | 2013-10-22 | 2014-02-12 | 中国科学院半导体研究所 | Signal amplification circuit |
| CN104796090A (en) * | 2013-12-16 | 2015-07-22 | 晨星半导体股份有限公司 | Variable gain low-noise amplifier |
| CN104796090B (en) * | 2013-12-16 | 2017-11-24 | 晨星半导体股份有限公司 | Variable gain low-noise amplifier and the method for operating variable gain low-noise amplifier |
| CN104300918A (en) * | 2014-10-17 | 2015-01-21 | 绵阳雷迪创微电子科技有限公司 | Low-noise amplifier circuit |
| CN104917475A (en) * | 2015-02-15 | 2015-09-16 | 上海唯捷创芯电子技术有限公司 | Adjustable gain power amplifier, gain adjusting method and mobile terminal |
| WO2016127753A1 (en) * | 2015-02-15 | 2016-08-18 | 上海唯捷创芯电子技术有限公司 | Adjustable gain power amplifier, gain adjustment method and mobile terminal |
| US10230344B2 (en) | 2015-02-15 | 2019-03-12 | Shanghai Vanchip Technologies Co., Ltd. | Adjustable gain power amplifier, gain adjustment method and mobile terminal |
| CN109167576A (en) * | 2018-06-13 | 2019-01-08 | 上海艾为电子技术股份有限公司 | Low-noise amplifier and electronic equipment |
| CN113162564A (en) * | 2021-03-25 | 2021-07-23 | 成都知融科技股份有限公司 | CMOS power amplifier with on-chip temperature compensation function |
| CN113746442A (en) * | 2021-11-05 | 2021-12-03 | 成都明夷电子科技有限公司 | Low-voltage high-linearity cascode amplifier |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101888210A (en) | Variable gain low-noise amplifier | |
| CN101741316B (en) | Gain variable broadband radio frequency low-noise amplifier | |
| CN103117711B (en) | Monolithic integrated radio frequency high-gain low-noise amplifier | |
| CN102497167B (en) | Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation | |
| CN101944883A (en) | Low-noise amplifier | |
| CN103117712B (en) | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier | |
| CN104270100B (en) | A kind of low-power consumption low-noise amplifier for strengthening technology using positive feedback technique and active transconductance | |
| CN103746660A (en) | Broadband CMOS (Complementary Metal-Oxide-Semiconductor Transistor) balun low noise amplifier | |
| CN103633946A (en) | Low-noise amplifier for realizing on-chip input and output of 50-ohm matching | |
| CN105978515A (en) | Transformer coupling radio frequency power amplifier with wide adjustment range and high integration level | |
| CN105281682A (en) | Low-power-consumption bidirectional noise-reducing low-noise amplifier | |
| CN103746665A (en) | Drive power amplifier with adjustable gain of 0.1-3GHz CMOS | |
| CN103095224A (en) | Complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology | |
| CN105811895A (en) | Optimized high-efficiency K-waveband MMIC power amplifier based on harmonic terminal | |
| CN107592081A (en) | A kind of ultra wide band monolithic microwave integrated low-noise amplifier | |
| CN102522951B (en) | Integrated structure for low-noise amplifier and mixer by means of current multiplexing | |
| CN101252341A (en) | Wideband low noise amplifier | |
| CN206211952U (en) | Wideband power amplifer and its active matching circuit | |
| CN204697010U (en) | Wideband low noise amplifier | |
| CN102801389A (en) | Ultra-low power consumption low-noise amplifier | |
| CN104660179A (en) | Low noise amplifier | |
| CN109167578A (en) | A kind of ultra-wideband low-noise amplifier with active inductance | |
| CN106936393A (en) | A kind of Low-power-consumptiohigh-gain high-gain broadband low noise difference amplifier | |
| CN103633947A (en) | Noninductive and high-gain CMOS (Complementary Metal Oxide Semiconductor) broadband low-noise amplifier | |
| CN104660185B (en) | A kind of low-power consumption ultra-wideband low-noise amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20101117 |