CN111756336A - Improved Darlington structure broadband low-noise amplifier - Google Patents
Improved Darlington structure broadband low-noise amplifier Download PDFInfo
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- CN111756336A CN111756336A CN202010709917.4A CN202010709917A CN111756336A CN 111756336 A CN111756336 A CN 111756336A CN 202010709917 A CN202010709917 A CN 202010709917A CN 111756336 A CN111756336 A CN 111756336A
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- 230000008878 coupling Effects 0.000 claims abstract description 37
- 238000010168 coupling process Methods 0.000 claims abstract description 37
- 238000005859 coupling reaction Methods 0.000 claims abstract description 37
- 239000003990 capacitor Substances 0.000 claims description 22
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 claims description 16
- 101150015217 FET4 gene Proteins 0.000 claims description 12
- 101150073536 FET3 gene Proteins 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
Abstract
The invention discloses an improved Darlington structure broadband low-noise amplifier, which comprises a Darlington tube, an active bias circuit, a feedback circuit, an input coupling circuit and an output coupling circuit, wherein the active bias circuit is connected with the input coupling circuit; one end of the input coupling circuit is an amplifier signal input end, and the other end of the input coupling circuit is connected with a grid electrode of the Darlington tube; one end of the active bias circuit and one end of the feedback circuit are both connected with the grid electrode of the Darlington tube, and the other ends of the active bias circuit and the feedback circuit are both connected with the drain electrode of the Darlington tube; one end of the output coupling circuit is connected with the drain electrode of the Darlington tube, and the other end of the output coupling circuit is an amplifier signal output end. The invention adopts the active bias circuit to provide voltage for the amplifying tube, can ensure the stability of the bias voltage when the temperature changes, adopts a mode of separating the feedback circuit from the active bias circuit, can effectively reduce the noise of the amplifier, and simultaneously adds the peaking inductor between the Darlington tubes to further widen the amplifying gain bandwidth.
Description
Technical Field
The invention belongs to the technical field of low-noise amplifiers, and particularly relates to a broadband low-noise amplifier with an improved Darlington structure.
Background
The performance of the low noise amplifier, which is a key component of the receiver, largely determines the receiving sensitivity of the receiver. In recent years, with the development of ultra-wideband radar and ultra-wideband communication systems, the demand for wideband receivers has increased dramatically, and further, the demand for wideband low-noise amplifiers has increased. The low noise amplifier adopting the Darlington structure can meet the requirement of a wide frequency band, the circuit schematic diagram is shown in figure 1, the design core is mainly a Darlington transistor, the Darlington transistor is also called a composite transistor, the collector electrodes formed by two or more transistors are connected together in a composite connection mode, the emitter electrode of the front transistor is directly connected to the base electrode of the rear transistor, and then the two transistors are sequentially connected. The Darlington feedback amplifier can provide various excellent performances, such as broadband performance, high linearity, small volume in realization, easiness in cascading with external components and the like, and is widely applied to broadband amplifiers.
The traditional Darlington amplifier is generally realized by adopting a BJT (bipolar junction transistor) or GaAs HBT (heterojunction bipolar transistor) process, has good broadband characteristics, and has the defects of large noise coefficient, large high-temperature and low-temperature working current change and the like. The Darlington amplifier bias circuit adopts resistance voltage division, and a voltage division resistor carries a feedback function, so that the design of the impedance matching and the gain flatness of the input port of the amplifier is completed. In fact, the mode makes the working current of the amplifier easily affected by temperature change, the resistance value of the resistor network is stable at high and low temperatures, the starting voltage and the IV characteristic curve of the amplifier tube core are changed, the voltage provided by the divider resistor for the amplifying tube cannot follow the voltage required by the amplifier at high and low temperatures, and the working current of the amplifier at high and low temperatures is greatly changed. The low-noise amplifier chip designed by adopting the GaAs HBT process has a higher noise coefficient than the low-noise amplifier chip designed by adopting the GaAs pHEMT process, and the current in the feedback path in the Darlington structure additionally increases a noise source for the amplifying tube, so that the noise of the amplifier is greatly increased, which is contrary to the requirement of broadband low noise.
Disclosure of Invention
In view of the above-mentioned deficiencies in the prior art, the present invention provides an improved wideband low noise amplifier with darlington architecture.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that:
an improved Darlington structure broadband low-noise amplifier comprises a Darlington tube, an active bias circuit, a feedback circuit, an input coupling circuit and an output coupling circuit; one end of the input coupling circuit is an amplifier signal input end, and the other end of the input coupling circuit is connected with a grid electrode of the Darlington tube; one end of the active bias circuit is connected with the grid electrode of the Darlington tube, and the other end of the active bias circuit is connected with the drain electrode of the Darlington tube; one end of the feedback circuit is connected with the grid electrode of the Darlington tube, and the other end of the feedback circuit is connected with the drain electrode of the Darlington tube; one end of the output coupling circuit is connected with the drain electrode of the Darlington tube, and the other end of the output coupling circuit is an amplifier signal output end.
Further, the darlington cell includes an amplifier die FET1 and an amplifier die FET 2; the drain of the amplifier die FET1 is connected to the drain of the amplifier die FET2 and to a power supply via an inductor L2; the source of the amplifier die FET1 is connected to the gate of amplifier die FET2 and is also connected to ground through resistor R4; the source of the amplifier die FET2 is grounded.
Further, the source of the amplifier die FET1 is connected to the gate of the amplifier die FET2 through an inductor L1.
Further, the active bias circuit includes cascaded amplifier die FET3 and amplifier die FET4, and resistor R3; the gates and drains of the amplifier die FET3 and the amplifier die FET4 are connected to each other, the source of the amplifier die FET3 is connected to ground, the drain of the amplifier die FET4 is connected to the drain of the amplifier die FET1 through a resistor R3, and is also connected to the gate of the amplifier die FET1 through a resistor R1.
Further, the feedback circuit comprises a resistor R2 and a capacitor C2 connected in series, the other end of the resistor R2 is connected to the gate of the amplifying die FET1, and the other end of the capacitor C2 is connected to the drain of the amplifying die FET 1.
Further, the input coupling circuit includes a capacitor C1, one end of the capacitor C1 is an amplifier signal input end, and the other end thereof is connected to the gate of the amplifying die FET 1.
Further, the output coupling circuit includes a capacitor C3, one end of the capacitor C3 is connected to the drain of the amplifying die FET2, and the other end thereof is an amplifier signal output terminal.
The invention has the following beneficial effects:
the active bias circuit is adopted to provide voltage for the amplifier tube, the voltage can change along with the voltage required by the amplifier at high and low temperatures, the stability of the bias voltage at the temperature change is ensured, the current stability of the amplifier tube is enhanced, and the current change at the high and low temperatures is effectively resisted, so that the stable work of the circuit in a wide temperature range is ensured; the noise of the amplifier can be effectively reduced by adopting a mode of separating a feedback circuit and an active bias circuit; meanwhile, peaking inductors are added between the Darlington tubes to further widen the amplification gain bandwidth.
Drawings
FIG. 1 is a schematic diagram of an improved Darlington broadband low noise amplifier of the present invention;
fig. 2 is a schematic diagram of the principle of the wideband low noise amplifier with the improved darlington structure according to the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
As shown in fig. 1, an embodiment of the present invention discloses an improved darlington broadband low noise amplifier, which includes a darlington transistor, an active bias circuit, a feedback circuit, an input coupling circuit, and an output coupling circuit; one end of the input coupling circuit is an amplifier signal input end, and the other end of the input coupling circuit is connected with a grid electrode of the Darlington tube; one end of the active bias circuit is connected with the grid electrode of the Darlington tube, and the other end of the active bias circuit is connected with the drain electrode of the Darlington tube; one end of the feedback circuit is connected with the grid electrode of the Darlington tube, and the other end of the feedback circuit is connected with the drain electrode of the Darlington tube; one end of the output coupling circuit is connected with the drain electrode of the Darlington tube, and the other end of the output coupling circuit is an amplifier signal output end.
According to the invention, the GaAs E-pHEMT process is adopted to design the active bias circuit to improve the Darlington structure amplifier chip, and compared with the divider resistor, the voltage provided by the active bias circuit for the amplifying tube can change along with the voltage required by the amplifier at high and low temperatures, so that the stability of the bias voltage at the time of temperature change is ensured, the current stability of the amplifying tube is enhanced, and the current change at the high and low temperatures is effectively resisted, thereby ensuring the stable work of the circuit in a wide temperature range.
In addition, the invention adopts a mode of separating the feedback circuit and the active bias circuit, thereby effectively reducing the noise of the amplifier.
In an alternative embodiment of the present invention, as shown in fig. 2, the darlington tube includes an amplifier die FET1 and an amplifier die FET 2; the drain of the amplifying die FET1 is connected with the drain of the amplifying die FET2, and together serve as the drain of the Darlington tube, and is connected with the power supply VD through the inductor L2; the source of the amplifier die FET1 is connected to the gate of the amplifier die FET2, the gate of the amplifier die FET2 serves as the gate of the darlington tube, and the source of the amplifier die FET1 is also connected to ground through a resistor R4; the source of the amplifier die FET2 is grounded.
Preferably, the invention adds a peaking inductor L1 between darlington transistors, that is, the source of the amplifying die FET1 is connected to the gate of the amplifying die FET2 through the peaking inductor L1, thereby further widening the amplification gain bandwidth and achieving the purpose of increasing the high frequency gain of the amplifier.
In an alternative embodiment of the present invention, as shown in fig. 2, the active bias circuit includes a cascade of an amplifier die FET3 and an amplifier die FET4, and a current limiting resistor R3; the gates and drains of both amplifier die FET3 and amplifier die FET4 are interconnected, specifically, the gate and drain of amplifier die FET3 are interconnected and connected to the source of amplifier die FET4, and the gate and drain of amplifier die FET4 are interconnected; the source of the amplifier die FET3 is connected to ground, the drain of the amplifier die FET4 is connected to the drain of the amplifier die FET1 through a current limiting resistor R3, and the drain of the amplifier die FET4 is also connected to the gate of the amplifier die FET1 through a resistor R1, thereby energizing the gate of the amplifier die FET 1.
In an alternative embodiment of the present invention, as shown in fig. 2, the feedback circuit includes a resistor R2 and a capacitor C2 connected in series, the input terminal of the resistor R2 being connected to the gate of the amplifier die FET1, and the input terminal of the capacitor C2 being connected to the drain of the amplifier die FET 1.
The invention utilizes the resistor R2 and the capacitor C2 to form a feedback path to adjust the impedance of the input port of the amplifier and the gain flatness index.
In an alternative embodiment of the present invention, as shown in fig. 2, the input coupling circuit includes a coupling capacitor C1, one end of the coupling capacitor C1 is an amplifier signal input, and the other end of the coupling capacitor C1 is connected to the gate of the amplifier die FET 1.
In an alternative embodiment of the present invention, as shown in fig. 2, the output coupling circuit includes a coupling capacitor C3, one end of the coupling capacitor C3 is connected to the drain of the amplifying die FET2, and the other end of the coupling capacitor C3 is the amplifier signal output terminal.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
Claims (7)
1. An improved Darlington structure broadband low-noise amplifier is characterized by comprising a Darlington tube, an active bias circuit, a feedback circuit, an input coupling circuit and an output coupling circuit; one end of the input coupling circuit is an amplifier signal input end, and the other end of the input coupling circuit is connected with a grid electrode of the Darlington tube; one end of the active bias circuit is connected with the grid electrode of the Darlington tube, and the other end of the active bias circuit is connected with the drain electrode of the Darlington tube; one end of the feedback circuit is connected with the grid electrode of the Darlington tube, and the other end of the feedback circuit is connected with the drain electrode of the Darlington tube; one end of the output coupling circuit is connected with the drain electrode of the Darlington tube, and the other end of the output coupling circuit is an amplifier signal output end.
2. The improved darlington-structured broadband low noise amplifier of claim 1, wherein the darlington transistor comprises an amplifier die FET1 and an amplifier die FET 2; the drain of the amplifier die FET1 is connected to the drain of the amplifier die FET2 and to a power supply via an inductor L2; the source of the amplifier die FET1 is connected to the gate of amplifier die FET2 and is also connected to ground through resistor R4; the source of the amplifier die FET2 is grounded.
3. The improved darlington broadband low noise amplifier of claim 2, wherein the source of the amplifier die FET1 is connected to the gate of the amplifier die FET2 through an inductor L1.
4. The improved darlington broadband low noise amplifier according to claim 2 or 3, wherein said active bias circuit comprises a cascade of an amplifier die FET3 and an amplifier die FET4, and a resistor R3; the gates and drains of the amplifier die FET3 and the amplifier die FET4 are connected to each other, the source of the amplifier die FET3 is connected to ground, the drain of the amplifier die FET4 is connected to the drain of the amplifier die FET1 through a resistor R3, and is also connected to the gate of the amplifier die FET1 through a resistor R1.
5. The improved Darlington broadband low noise amplifier as claimed in claim 2 or 3, wherein the feedback circuit comprises a resistor R2 and a capacitor C2 connected in series, the other end of the resistor R2 is connected to the gate of the amplifying die FET1, and the other end of the capacitor C2 is connected to the drain of the amplifying die FET 1.
6. The improved darlington broadband low noise amplifier according to claim 2 or 3, wherein the input coupling circuit comprises a capacitor C1, one end of the capacitor C1 is an amplifier signal input end, and the other end of the capacitor C1 is connected to the gate of the amplifying die FET 1.
7. The improved darlington broadband low noise amplifier according to claim 2 or 3, wherein said output coupling circuit comprises a capacitor C3, one end of said capacitor C3 is connected to the drain of the amplifying die FET2, and the other end is an amplifier signal output terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010709917.4A CN111756336A (en) | 2020-07-22 | 2020-07-22 | Improved Darlington structure broadband low-noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010709917.4A CN111756336A (en) | 2020-07-22 | 2020-07-22 | Improved Darlington structure broadband low-noise amplifier |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112653402A (en) * | 2020-12-21 | 2021-04-13 | 中国电子科技集团公司第二十四研究所 | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process |
| CN113098407A (en) * | 2021-04-09 | 2021-07-09 | 成都通量科技有限公司 | Novel driving amplifier |
| CN114928336A (en) * | 2022-06-01 | 2022-08-19 | 电子科技大学 | Darlington amplifier with optimized low frequency noise function |
| CN117118363A (en) * | 2023-10-24 | 2023-11-24 | 中科海高(成都)电子技术有限公司 | Active frequency doubling circuit with high harmonic suppression |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5166639A (en) * | 1991-10-29 | 1992-11-24 | Sgs-Thomson Microelectronics, Inc. | High gain mololithic microwave integrated circuit amplifier |
| US7772927B1 (en) * | 2007-10-04 | 2010-08-10 | Rf Micro Devices, Inc. | Active bias Darlington amplifier |
| CN105720942A (en) * | 2016-01-22 | 2016-06-29 | 西安电子科技大学 | Ultra-wide-band low-noise high-balance on-chip active Balun |
| CN207869070U (en) * | 2017-12-29 | 2018-09-14 | 成都华光瑞芯微电子股份有限公司 | Active biased darlington structure amplifier |
-
2020
- 2020-07-22 CN CN202010709917.4A patent/CN111756336A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5166639A (en) * | 1991-10-29 | 1992-11-24 | Sgs-Thomson Microelectronics, Inc. | High gain mololithic microwave integrated circuit amplifier |
| US7772927B1 (en) * | 2007-10-04 | 2010-08-10 | Rf Micro Devices, Inc. | Active bias Darlington amplifier |
| CN105720942A (en) * | 2016-01-22 | 2016-06-29 | 西安电子科技大学 | Ultra-wide-band low-noise high-balance on-chip active Balun |
| CN207869070U (en) * | 2017-12-29 | 2018-09-14 | 成都华光瑞芯微电子股份有限公司 | Active biased darlington structure amplifier |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112653402A (en) * | 2020-12-21 | 2021-04-13 | 中国电子科技集团公司第二十四研究所 | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process |
| CN113098407A (en) * | 2021-04-09 | 2021-07-09 | 成都通量科技有限公司 | Novel driving amplifier |
| CN114928336A (en) * | 2022-06-01 | 2022-08-19 | 电子科技大学 | Darlington amplifier with optimized low frequency noise function |
| CN114928336B (en) * | 2022-06-01 | 2023-04-25 | 电子科技大学 | Darlington amplifier with low-frequency noise optimizing function |
| CN117118363A (en) * | 2023-10-24 | 2023-11-24 | 中科海高(成都)电子技术有限公司 | Active frequency doubling circuit with high harmonic suppression |
| CN117118363B (en) * | 2023-10-24 | 2024-01-26 | 中科海高(成都)电子技术有限公司 | Active frequency doubling circuit with high harmonic suppression |
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