CN116566332A - Low-power-consumption broadband low-noise amplifier - Google Patents
Low-power-consumption broadband low-noise amplifier Download PDFInfo
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- CN116566332A CN116566332A CN202310372982.6A CN202310372982A CN116566332A CN 116566332 A CN116566332 A CN 116566332A CN 202310372982 A CN202310372982 A CN 202310372982A CN 116566332 A CN116566332 A CN 116566332A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0283—Reducing the number of Dc-current paths
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a low-power-consumption broadband low-noise amplifier, which comprises a bias circuit, an input stage amplifier and an output stage buffer amplifier, wherein the bias circuit is connected with the input stage amplifier; the bias circuit is composed of a current mirror; the input stage amplifier consists of a current multiplexing structure, a current splitting and transconductance enhancing structure and a parallel resistor negative feedback structure; the output stage buffer amplifying circuit consists of a common source buffer structure, a current multiplexing structure and a noise cancellation structure. The invention provides two-path current multiplexing and two-path noise cancellation, and adopts inter-capacitor cancellation. Through the mode, the use efficiency of each circuit current can be improved, the performances of circuit gain, noise and the like can be effectively improved under the condition that no additional current is added, on the other hand, the feedback branch is optimized, the gain flatness is improved, and the bandwidth is expanded.
Description
Technical Field
The invention relates to the technical field of integrated circuit design, in particular to a low-power-consumption broadband low-noise amplifier.
Background
With the rapid development of high-speed wireless communication technology, internet of things sensing network, radar communication and other applications, portability, low power consumption, low cost and high performance of wireless communication equipment become research hotspots. The application of the radio frequency transceiver chip with high integration greatly improves the performance of the mobile communication equipment. The front-end key module of the radio frequency receiver is used as one of the high-power-consumption modules in the communication system, and the reduction of the power consumption is the key for realizing the low power consumption of the whole communication system. In order to cope with the rapid development of applications such as high-speed wireless communication technology, internet of things sensing network, radar communication, global positioning system, WIFI, satellite link and the like, the radio frequency receiving front-end chip is required to have the characteristics of wide bandwidth, low power consumption, low noise and the like.
The low noise amplifier is used as an active module of the first stage of the radio frequency receiver, and the circuit performance of the low noise amplifier can influence the quality of the whole system. The low noise amplifier amplifies the input signal, and can effectively reduce the noise coefficient and improve the linearity performance while amplifying the radio frequency useful signal, thereby further making the signal processing insensitive to noise. The key performance of its performance is to send the distortion-free amplified signal to the signal processing unit without adding additional noise. In addition, low power consumption is also an important index for low noise amplifiers, and is mainly represented by low current and low voltage, but reducing circuit power consumption deteriorates circuit gain and noise figure performance to different degrees.
The low power consumption of the low noise amplifier is mainly achieved by reducing the operating voltage and reducing the use of the operating current. The technology comprises a threshold voltage reduction technology, a current multiplexing technology, a gate control power supply technology and the like, wherein the threshold voltage reduction technology mainly causes the voltage difference between a substrate and a source electrode to be increased through forward substrate bias, so as to realize the effect of reducing the threshold voltage of a transistor, but the effect causes the performance of a circuit such as gain, noise coefficient and the like to be deteriorated; the current multiplexing can realize the operation of a multi-path circuit by using one path of current, and the core idea is to reduce the circuit utilization rate of the circuit under the condition of keeping the equivalent transconductance unchanged, and realize the low-power consumption design without sacrificing the performances such as gain, noise coefficient and the like. However, this reduces the isolation between circuit modules, and may cause problems such as crosstalk and signal coupling.
Common low noise amplifier structures are common source amplifier structures and common gate amplifier structures. The common source amplifier is characterized by high input impedance, which requires a high-order matching network from a signal source to a common source input end to expand bandwidth, but the introduction of the high-order matching network can increase the use of active devices and increase the noise coefficient of a circuit and the area of a chip. The common gate amplifier structure is a low input impedance, high output impedance circuit, but the structure is noisy and has a low gain. For applications such as wireless network communication, satellite link communication and the like, the design of a low-power-consumption low-noise amplifier is a key for realizing a low-power-consumption radio frequency receiving and transmitting system, but the performances such as power consumption, gain, linearity, noise coefficient and the like often cannot be perfectly realized, and a certain compromise relation exists between the low-power consumption and high-performance indexes such as low noise, high linearity and the like. It is therefore necessary to study how to realize a high gain, low noise figure, wide bandwidth amplifier at low supply voltages.
Disclosure of Invention
The invention aims to provide a low-power-consumption broadband low-noise amplifier, which can improve the service efficiency of each circuit current, effectively improve the performances of circuit gain, noise and the like under the condition of not adding extra current, optimize a feedback branch, improve the gain flatness and expand the bandwidth.
Aiming at the defects in the prior art and the prior art, the invention is realized by the following design scheme:
a low-power-consumption broadband low-noise amplifier comprises a biasing circuit, an input stage amplifier and an output stage buffer amplifier; the bias circuit comprises a current generating structure formed by a first transistor and a second transistor, and a current buffer structure formed by a first resistor and a second resistor; the input stage amplifying circuit comprises a common-source common-gate current multiplexing amplifying circuit structure formed by a third transistor and a fourth transistor, on the basis, a complementary common-source amplifying structure formed by a fifth transistor and the third transistor is added, an input matching network is formed by a first inductor, a first capacitor and a second capacitor, an output matching network is formed by the second inductor serving as an input stage amplifying circuit load and the third inductor at the same time, and a circuit parallel negative feedback structure is formed by the third capacitor and a third resistor; the output stage buffer amplifier comprises a buffer circuit structure with amplification, which is formed by a sixth transistor and a common drain buffer seventh transistor of a common source amplification structure connected by a current source, a matching between the sixth transistor and the seventh transistor, which are formed by a fourth inductor, a capacitance offset feedback structure, which is formed by a fourth capacitor, and an isolation direct current signal structure, which is formed by a fifth capacitor. The third transistor is multiplexed with the direct current of the fourth transistor and the fifth transistor; and the direct current of the sixth transistor and the direct current of the seventh transistor are multiplexed.
Further, a connection end of the first inductor and the first capacitor in the input stage amplifying circuit is connected with one end of the second resistor, one end of the third inductor is connected with one end of the third resistor and then connected with a grid electrode of the seventh transistor, and a grid electrode of the third transistor is connected with a grid electrode of the sixth transistor; one end of a fourth capacitor in the output stage buffer amplifier is connected with the drain electrode of the third transistor; the bias circuit provides bias voltages for the gates of the third transistor and the sixth transistor.
Further, the first transistor in the bias circuit is connected with the drain electrode and the grid electrode and is connected with the other end of the second resistor; the second transistor adopts a current source connection method, the drain electrode of the second transistor is connected with the drain electrode and the grid electrode of the first transistor, one end of the first resistor is connected with the grid electrode of the second transistor, and the other end of the first resistor is connected with the external voltage Vpb 1.
Further, a third transistor and a fourth transistor in the input stage amplifying circuit form a common-source common-gate structure circuit, a drain electrode of the third transistor is connected with a source electrode of the fourth transistor and then is connected with a drain electrode of the fifth transistor, the other end of the first inductor is connected with a grid electrode of the third transistor, a drain electrode of the fourth transistor is connected with one end of the second inductor and then is connected with the other end of the third inductor, one end of the third capacitor is connected with the other end of the third resistor, the other end of the third capacitor is connected with a connecting end of the first inductor and the first capacitor, one end of the second capacitor is connected with the other end of the first capacitor and then is connected with a signal input end, the other end of the second capacitor is connected with a grid electrode of the fifth transistor, one end of the fourth resistor is connected with a grid electrode of the second transistor, and the other end of the fourth resistor is connected with an external voltage Vpb 2.
Further, a fourth inductor in the output stage buffer amplifier forms inter-electrode matching between the sixth transistor and the seventh transistor, one end of the fourth inductor is connected with the drain electrode of the sixth transistor, the other end of the fourth inductor is connected with the source electrode of the seventh transistor, one end of the fourth capacitor is connected with the drain electrode of the third transistor, the other end of the fourth capacitor is connected with the source electrode of the seventh transistor, one end of the fifth capacitor is connected with the source end of the seventh transistor, and the other end of the fifth capacitor is connected with the signal output end.
Further, the substrate poles and sources of the first transistor, the third transistor and the sixth transistor are connected to the ground signal terminal, the substrate poles and sources of the second transistor and the fifth transistor are connected to the power signal terminal, the substrate pole of the fourth transistor is connected to the ground signal terminal, and the substrate pole of the seventh transistor is connected to the source.
The beneficial effects of the invention are as follows: the low-power-consumption broadband low-noise amplifier has the following advantages: firstly, the invention provides a current multiplexing structure, which uses a current multiplexing technology twice in a circuit, and improves the circuit gain and reduces the circuit noise coefficient under the condition of not adding extra current; secondly, the invention provides a parallel current shunt circuit structure, which reduces the load voltage difference of an amplifying circuit, and simultaneously realizes signal amplification and improves the equivalent input transconductance of the circuit; thirdly, the invention provides a parasitic capacitance counteracting structure, which reduces the influence of parasitic capacitance on a circuit, effectively reduces the input reflection coefficient, simultaneously creatively adopts a parallel feedback technology in a common-source common-gate circuit to reduce the equivalent input impedance, improves the circuit gain flatness, achieves the noise counteracting technology by combining a current multiplexing technology, effectively reduces the noise, and has the circuit noise in a frequency band less than 1.2dB.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will briefly introduce the drawings that are required to be used in the embodiments or the description of the prior art, in which the drawings are only some embodiments recorded in the present invention, and other drawings can be obtained according to these drawings without paying any inventive effort to those skilled in the art.
FIG. 1 is a schematic diagram of a low power broadband low noise amplifier of the present invention;
FIG. 2 is a simulation result of a part of S parameters of a low power broadband low noise amplifier according to the present invention;
FIG. 3 is a simulation result of the gain of a low power broadband low noise amplifier of the present invention;
FIG. 4 is a simulation result of noise figure of a low power broadband low noise amplifier according to the present invention;
fig. 5 is a simulation result of stability of a low power broadband low noise amplifier according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings described in accordance with the drawings are merely exemplary and are not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention due to unnecessary details, only structures and/or processing steps closely related to the solution according to the present invention are shown in the drawings, while other details not greatly related to the present invention are omitted.
And, in the description of the present invention, the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on the drawings, are merely for convenience of description of the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1 to 5, an embodiment of the present invention includes:
as shown in fig. 1, an embodiment of the present invention includes: the invention provides a low-power-consumption broadband low-noise amplifier which comprises a bias circuit 100, an input stage amplifying circuit 200 and an output stage buffer amplifier 300.
The invention consists of a two-stage amplifier in which the input stage amplifying circuit 200 is a cascode amplifier incorporating a complementary cascode structure. The output stage buffer amplifier 300 is an amplifier in which the output buffer of the common drain amplifier structure is combined with a common source amplifier. The input stage amplifying circuit 200 and the output stage buffer amplifier 300 share the dc bias voltage supplied from the bias circuit 100.
The bias circuit 100 of the present invention is a bias circuit of a current mirror structure. The current source connection method based 102 and the current replication transistor are composed of a first transistor (101), a second resistor (104) and a 103 are resistors with large resistance values, so that the input impedance is influenced by the impedance of a current mirror circuit and extra noise introduced by the current mirror is reduced.
The input stage amplifying circuit 200 of the present invention is a cascode amplifier, and adopts a cascode structure combined with a complementary cascode structure. The common-source common-gate amplifier structure is a current multiplexing structure, high gain and good isolation performance are realized under the condition of not increasing a current path, the influence of a rear-stage circuit on a front-stage circuit is reduced, on the common-source common-gate structure, a complementary common-source structure, namely a common-gate transistor fourth transistor (202) on the common-source common-gate structure is combined with a fifth transistor (203) of a P-type common-source structure in parallel, the parallel shunt effect is realized, the voltage drop on a load second inductor (205) is reduced, and the effects of improving the input equivalent transconductance and the circuit gain are also realized by adding the fifth transistor (203). An input signal flows into the third transistor (201) and the fifth transistor (203) through the first capacitor (207) and the second capacitor (208) for amplification, and then is input to the fourth transistor (202) through the source electrode of the fourth transistor (202) for common gate structure amplification. The first inductor (204) and the third inductor (206) are mainly used for improving the performance of the matching network, and are beneficial to improving the circuit bandwidth. The first capacitor (207) and the second capacitor (208) are mainly used for isolating the influence of direct current voltage on an input signal, and form an input matching network with the first inductor (204). The second inductor (205) is used as a load of the input stage amplifier and a circuit peaking inductor, zero and pole cancellation are introduced, and the gain roll-off at a high frequency is restrained, so that the effect of expanding the circuit bandwidth is realized. The third capacitor (209) and the third resistor (210) form parallel resistance-capacitance negative feedback, the parallel feedback adjusts circuit stability by introducing a resistor to increase the real part of input impedance, the bandwidth is widened, the gain in the working frequency band is flatter, meanwhile, the current noise of the third transistor (201) is amplified in an inverted mode to achieve a noise cancellation effect at the output end, and the noise coefficient is reduced.
The input stage amplifying circuit 300 of the present invention is an output buffer amplifier, and is composed of a sixth transistor (301) and a seventh transistor (302) using a common source stage amplifier and the buffer composition of the output buffer. The sixth transistor (301) is of a common source amplifier structure, the seventh transistor (302) is of a common drain amplifier structure, the drain electrode of the sixth transistor (301) is connected with the source electrode of the seventh transistor (302) through a fourth inductor (303), the source electrode of the sixth transistor (301) is connected with the grid electrode of the third transistor (201), an input signal flows into the sixth transistor (301) through a first capacitor (207) and a first inductor (204) and then is placed at the output end, meanwhile, the current noise of the reverse third transistor (201) fed back by the parallel feedback resistor-capacitor structure is reversed again through the sixth transistor (301), and the reverse noise signal is overlapped with the current noise of the original third transistor (201) at the output end, so that the noise cancellation effect is achieved. The fourth inductor (303) is used as a peaking inductor to expand the circuit bandwidth, one end of the fourth capacitor (304) is connected with the drain electrode of the third transistor (201), the other end of the fourth capacitor is connected with the source electrode of the seventh transistor (302), the inherent parasitic capacitance of the transistor is counteracted, and the input reflection coefficient is effectively reduced. The fifth capacitor (305) is used as a part of the output matching network to realize the effect of isolating the direct current power supply, so that the influence on the next-stage circuit is reduced.
The embodiment of the invention is used for WIFI-6 (5G frequency band and 6G frequency band), and the working frequency band is 4.98 GHz-7.58 GHz. It should be noted that, the operating frequency band of the embodiment is only an example, and is not limited by a specific operating frequency, and in practical design, the present invention is applicable to different frequency bands.
The invention relates to the application field of a low-power-consumption broadband low-noise amplifier, which comprises the following steps: wireless communication technology, internet of things sensing network and radar communication, global positioning system, WIFI, satellite link, etc. The invention provides a current multiplexing structure, which uses a current multiplexing technology twice in a circuit, improves the circuit gain and reduces the circuit noise coefficient under the condition of not adding extra current; the invention provides a parallel current shunt circuit structure, which reduces the load voltage difference of an amplifying circuit, and simultaneously realizes signal amplification and improves the equivalent input transconductance of the circuit; the invention provides a parasitic capacitance counteracting structure, which reduces the influence of parasitic capacitance on a circuit, effectively reduces the input reflection coefficient, simultaneously creatively adopts a parallel feedback technology in a common-source common-gate circuit to reduce the equivalent input impedance, improves the circuit gain flatness, achieves the noise counteracting technology by combining a current multiplexing technology, effectively reduces the noise, and has the circuit noise in a frequency band less than 1.2dB. Based on the technology proposed above, the invention finally realizes a low-noise amplifier with low power consumption, low noise coefficient, high gain and wide bandwidth.
The power supply voltage of the low-power-consumption broadband low-noise amplifier is 1V, and the consumed power is 4.8mW.
Fig. 2 is a simulation result of a part of S parameters of a low power consumption broadband low noise amplifier. The low-noise amplifier has an input reflection coefficient S11 of less than-10 dB in 4.812 GHz-8.129 GHz, an output reflection coefficient S22 of less than-10 dB in 2.485 GHz-7.886 GHz, and S12 of a maximum value of-26.17 dB in the whole frequency band.
Fig. 3 is a simulation result of the gain of the low power broadband low noise amplifier. The maximum value of the gain S21 of the low noise amplifier is 21.76dB in the frequency band of 4.98 HGHz-7.58 GHz, and the flatness in the frequency band is +/-0.19 dB.
Fig. 4 is a simulation result of noise figure of a low power consumption broadband low noise amplifier. The noise coefficient NF of the low-noise amplifier is smaller than 1.2dB in the frequency band of 4.98 HGHz-7.58 GHz, the minimum value of the noise coefficient in the frequency band is 1.13dB, and the minimum value of the minimum noise coefficient in the frequency band is 1.03dB.
Fig. 5 is a simulation result of stability of a low power broadband low noise amplifier. The stability coefficient KF of the low noise amplifier is larger than 1 in the frequency band of 4.98 HGHz-7.58 GHz, which indicates that the system is stable.
The low-power-consumption broadband low-noise amplifier has the following advantages:
firstly, the invention provides a current multiplexing structure, which uses a current multiplexing technology twice in a circuit, and improves the circuit gain and reduces the circuit noise coefficient under the condition of not adding extra current;
secondly, the invention provides a parallel current shunt circuit structure, which reduces the load voltage difference of an amplifying circuit, and simultaneously realizes signal amplification and improves the equivalent input transconductance of the circuit;
thirdly, the invention provides a parasitic capacitance counteracting structure, which reduces the influence of parasitic capacitance on a circuit, effectively reduces the input reflection coefficient, simultaneously creatively adopts a parallel feedback technology in a common-source common-gate circuit to reduce the equivalent input impedance, improves the circuit gain flatness, achieves the noise counteracting technology by combining a current multiplexing technology, effectively reduces the noise, and has the circuit noise in a frequency band less than 1.2dB.
Furthermore, it should be noted that, in this specification, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
It should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to specific embodiments, and that the embodiments may be combined appropriately to form other embodiments that will be understood by those skilled in the art.
Claims (5)
1. The low-power-consumption broadband low-noise amplifier is characterized by comprising a biasing circuit (100), an input stage amplifying circuit (200) and an output stage buffer amplifier (300); the bias circuit (100) comprises a current generating structure composed of a first transistor (101) and a second transistor (102), and a current buffer structure composed of a first resistor (103) and a second resistor (104); the input stage amplifying circuit (200) comprises a cascode current multiplexing amplifying circuit structure formed by a third transistor (201) and a fourth transistor (202), on the basis, a complementary common source amplifying structure formed by a fifth transistor (203) and the third transistor (201) is added, an input matching network is formed by a first inductor (204), a first capacitor (207) and a second capacitor (208), an output matching network is formed by the second inductor (205) serving as a load of the input stage amplifying circuit (200) and simultaneously and a third inductor (206), and a circuit parallel negative feedback structure is formed by a third capacitor (209) and a third resistor (210); the output stage buffer amplifier (300) comprises a buffer circuit structure with amplification, which is formed by a sixth transistor (301) and a common drain buffer seventh transistor (302) of a common source amplification structure of a current source connection method, a matching between the sixth transistor (301) and the seventh transistor (302) which are formed by a fourth inductor (303), a capacitance offset feedback structure formed by a fourth capacitor (304) and an isolation direct current signal structure formed by a fifth capacitor (305). The third transistor (201) is multiplexed with direct current of the fourth transistor (202) and the fifth transistor (203); -direct current multiplexing of said sixth transistor (301) and seventh transistor (302);
the connection end of the first inductor (204) and the first capacitor (207) in the input stage amplifying circuit (200) is connected with one end of the second resistor (104), one end of the third inductor (206) is connected with one end of the third resistor (210) and then connected with the grid electrode of the seventh transistor (302), and the grid electrode of the third transistor (201) is connected with the grid electrode of the sixth transistor (301); one end of a fourth capacitor (304) in the output stage buffer amplifier (300) is connected with the drain electrode of the third transistor (201); the bias circuit (100) provides bias voltages to gates of the third transistor (201) and the sixth transistor (301).
2. The low power broadband low noise amplifier of claim 1, wherein: the first transistor (101) in the bias circuit (100) is connected with the drain electrode and the grid electrode and is connected with the other end of the second resistor (104); the second transistor (102) adopts a current source connection method, the drain electrode of the second transistor (102) is connected with the drain electrode and the grid electrode of the first transistor (101), one end of the first resistor (103) is connected with the grid electrode of the second transistor (102), and the other end of the first resistor (103) is connected with the external voltage Vpb 1.
3. The low power broadband low noise amplifier of claim 1, wherein: the third transistor (201) and the fourth transistor (202) in the input stage amplifying circuit (200) form a cascode structure circuit, the drain electrode of the third transistor (201) is connected with the source electrode of the fourth transistor (202) and then is connected with the drain electrode of the fifth transistor (203), the other end of the first inductor (204) is connected with the grid electrode of the third transistor (201), the drain electrode of the fourth transistor (202) is connected with one end of the second inductor (205) and then is connected with the other end of the third inductor (206), one end of the third capacitor (209) is connected with the other end of the third resistor (210), the other end of the third capacitor is connected with the connecting end of the first inductor (204) and the first capacitor (207), one end of the second capacitor (208) is connected with the other end of the first capacitor (207) and then is connected with the signal input end, the other end of the second capacitor is connected with the grid electrode of the fifth transistor (203), and one end of the fourth resistor (211) is connected with the grid electrode of the second transistor (102), and the other end of the fourth resistor is connected with the external voltage b 2.
4. The low power broadband low noise amplifier of claim 1, wherein: a fourth inductor (303) in the output stage buffer amplifier (300) is matched between a sixth transistor (301) and a seventh transistor (302), one end of the fourth inductor (303) is connected with the drain electrode of the sixth transistor (301), the other end of the fourth inductor is connected with the source electrode of the seventh transistor (302), one end of a fourth capacitor (304) is connected with the drain electrode of the third transistor (201), the other end of the fourth capacitor is connected with the source electrode of the seventh transistor (302), one end of a fifth capacitor (305) is connected with the source end of the seventh transistor (302), and the other end of the fifth capacitor is connected with the signal output end.
5. The low power broadband low noise amplifier of claim 1, wherein: the substrate poles and sources of the first transistor (101), the third transistor (201) and the sixth transistor (301) are connected to a ground signal terminal, the substrate poles and sources of the second transistor (102) and the fifth transistor (203) are connected to a power signal terminal, the substrate pole of the fourth transistor (202) is connected to the ground signal terminal, and the substrate pole of the seventh transistor (302) is connected to the source.
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| CN202310372982.6A CN116566332A (en) | 2023-04-10 | 2023-04-10 | Low-power-consumption broadband low-noise amplifier |
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| CN202310372982.6A CN116566332A (en) | 2023-04-10 | 2023-04-10 | Low-power-consumption broadband low-noise amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116865696A (en) * | 2023-09-04 | 2023-10-10 | 四川益丰电子科技有限公司 | Low-power consumption high-gain low-noise differential amplifying circuit |
-
2023
- 2023-04-10 CN CN202310372982.6A patent/CN116566332A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116865696A (en) * | 2023-09-04 | 2023-10-10 | 四川益丰电子科技有限公司 | Low-power consumption high-gain low-noise differential amplifying circuit |
| CN116865696B (en) * | 2023-09-04 | 2023-12-15 | 四川益丰电子科技有限公司 | Low-power consumption high-gain low-noise differential amplifying circuit |
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