CN112653402A - Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process - Google Patents
Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process Download PDFInfo
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- CN112653402A CN112653402A CN202011519129.5A CN202011519129A CN112653402A CN 112653402 A CN112653402 A CN 112653402A CN 202011519129 A CN202011519129 A CN 202011519129A CN 112653402 A CN112653402 A CN 112653402A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000003990 capacitor Substances 0.000 claims description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
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- 238000004891 communication Methods 0.000 description 2
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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Abstract
The invention provides a low-voltage medium-power radio-frequency amplifier based on a silicon-based BJT (bipolar junction transistor) process, which comprises the following components: an amplifying circuit; the bias network is used for providing bias voltage for the input end of the amplifying circuit, and the output end of the bias network is connected with the input end of the amplifying circuit; the resistance-capacitance negative feedback network is used for providing negative feedback for the amplifying circuit so as to determine the gain of the amplifying circuit; one end of the resistance-capacitance negative feedback network is connected with the input end of the amplifying circuit, and the other end of the resistance-capacitance negative feedback network is connected with the output end of the amplifying circuit; the output network is used for connecting a power supply and providing bias voltage for the output end of the amplifying circuit; the resistance negative feedback network is used for adjusting the power gain and/or impedance matching of the amplifying circuit and providing direct current for the amplifying circuit; the invention can effectively improve the stability of the gain of the medium power amplifier along with the temperature change and meet the application requirements of low power consumption, broadband and high linearity.
Description
Technical Field
The invention relates to the field of integrated circuit design, in particular to a low-voltage medium-power radio-frequency amplifier based on a silicon-based BJT (bipolar junction transistor) process.
Background
The radio frequency amplifier is a key component in a wireless transceiving system, and is widely applied to the fields of wireless communication, broadcast television, point-to-point communication and the like. The function of the device is to amplify the radio frequency weak signal. The medium-power radio frequency amplifier is mainly applied to the intermediate stage of a receiver and a transmitter, and the gain adjustment of a signal link is realized. The traditional medium power amplifier realized based on the silicon-based BJT has the problems of large power supply current and output 1dB compression point fluctuation at high and low temperatures and low output 1dB compression point when a power supply of 5V or below is supplied, so that the medium power amplifier needs a power supply of more than 8V in a normal condition, and the broadband medium power radio frequency amplifier realized based on the GaAs PHEMT process and supplied with power at 5V or below has the problems of large volume, high cost and the like.
The medium power amplifier of the modern wireless transceiving system needs low voltage, small volume, broadband, high linearity and the like, so that the overall power consumption of the system can be reduced, a large system dynamic range can be obtained, and the design of the low-voltage medium power amplifier has very important engineering value.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a low-voltage medium-power radio-frequency amplifier based on a silicon-based BJT (bipolar junction transistor) process, which mainly solves the problems that the output 1dB compression point is greatly changed and the output 1dB compression point is low in a temperature range of-55-125 ℃ when the low-voltage medium-power amplifier is applied.
In order to achieve the above and other objects, the present invention adopts the following technical solutions.
A low-voltage medium-power radio-frequency amplifier based on silicon-based BJT technology, comprising:
an amplifying circuit;
the bias network is used for providing bias voltage for the input end of the amplifying circuit, and the output end of the bias network is connected with the input end of the amplifying circuit;
the resistance-capacitance negative feedback network is used for providing negative feedback for the amplifying circuit so as to determine the gain of the amplifying circuit; one end of the resistance-capacitance negative feedback network is connected with the input end of the amplifying circuit, and the other end of the resistance-capacitance negative feedback network is connected with the output end of the amplifying circuit;
the output network is used for connecting a power supply and providing bias voltage for the output end of the amplifying circuit;
and the resistance negative feedback network is used for adjusting the power gain and/or impedance matching of the amplifying circuit and providing direct current for the amplifying circuit.
Optionally, the amplifying circuit comprises: the base electrode of the first triode is used as the input end of the amplifying circuit; the collector electrode of the first triode is connected with the collector electrode of the second triode to serve as the output end of the amplifying circuit; the emitter of the first triode is respectively connected with the emitter of the second triode and one connection point of the resistor negative feedback network; and the emitter of the second triode is connected with the other connecting point of the resistance negative feedback network.
Optionally, the bias network includes a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first resistor, a second resistor, and a third resistor; the emitter of the fifth triode is grounded, and the collector is connected with the base and then connected with the emitter of the fourth triode; a collector electrode and a base electrode of the fourth triode are connected and then are connected with an emitting electrode of the third triode; the base electrode of the third triode is connected with one end of the second resistor; the other end of the second resistor is respectively connected with a collector electrode of the third triode and a base electrode of the sixth triode; one end of the first resistor is connected with the collector of the third triode, and the other end of the first resistor is connected with the collector of the sixth triode and then connected with a power supply; and an emitting electrode of the sixth triode is connected with one end of the third resistor, and the other end of the third resistor is used as an output end of the bias network.
Optionally, the resistive degeneration network comprises: a fifth resistor and a sixth resistor; one end of the fifth resistor is connected with the emitting electrode of the first triode, and the other end of the fifth resistor is connected with one end of the sixth resistor and grounded; the other end of the sixth resistor is connected with an emitting electrode of the second triode.
Optionally, the resistance-capacitance negative feedback network includes: one end of the first capacitor is connected with the input end of the amplifying circuit; the other end of the first capacitor is connected with one end of the fourth resistor; the other end of the fourth resistor is connected with the output end of the amplifying circuit.
Optionally, the output network comprises: the first inductor and the second capacitor, wherein one end of the first inductor is connected with the output end of the amplifying circuit; the other end of the first inductor is connected with one end of the second capacitor and is connected with a power supply; the other end of the second capacitor is grounded.
Optionally, the first triode and the second triode are bipolar transistors of the same type.
Optionally, the type of the first triode includes one of: si BJT, SiGe HBT, GaAs HBT, InP HBT.
As described above, the low-voltage medium-power rf amplifier based on the silicon-based BJT process of the present invention has the following advantages.
The bias voltage provided by the bias network has a temperature compensation function, can ensure the stability of the gain and the output 1dB compression point, and has the advantages of low power supply voltage, small gain temperature change, small output 1dB compression point change, high output 1dB compression point and the like.
Drawings
Fig. 1 is a block diagram of a low-voltage medium-power rf amplifier based on a silicon-based BJT process according to an embodiment of the present invention.
Fig. 2 is a circuit diagram of a low voltage medium power rf amplifier based on silicon-based BJT technology in an embodiment of the present invention.
FIG. 3 is a diagram illustrating a variation of a power supply current under a power supply voltage of 5V and a temperature range of-55 to 125 ℃ in an embodiment of the present invention.
FIG. 4 is a graph showing the gain variation under the conditions of a power supply voltage of 5V and a temperature range of-55 to 125 ℃ in an embodiment of the present invention.
FIG. 5 shows an example of a 1dB compression point diagram output under the conditions of a power supply voltage of 5V and a temperature range of-55 ℃.
FIG. 6 shows an example of a 1dB compression point diagram output under the conditions of a power supply voltage of 5V and a temperature range of 27 ℃.
FIG. 7 shows an example of outputting a 1dB compression point diagram under the conditions of a power supply voltage of 5V and a temperature range of 125 ℃.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Referring to fig. 1, the present invention provides a low-voltage medium-power rf amplifier based on a silicon-based BJT process, which includes an amplifying circuit 1, a bias network 2, a resistance-capacitance negative feedback network 3, an output network 4, and a resistance negative feedback network 5.
In an embodiment, the input end of the amplifying circuit 1 receives an input signal, and the output end outputs the input signal after signal amplification.
In an embodiment, the output terminal of the bias network 2 is connected to the input terminal of the amplifier circuit 1, and provides a bias voltage to the input terminal of the amplifier circuit 1.
In one embodiment, one end of the rc negative feedback network 3 is connected to the input end of the amplifier circuit 1, and the other end is connected to the output end of the amplifier circuit 1, so as to provide negative feedback for the amplifier circuit and determine the gain of the amplifier circuit.
In one embodiment, the output network 4 has one end connected to the power supply and the other end connected to the output end of the amplifying circuit 1, and provides the output end of the amplifying circuit 1 with a bias voltage.
In one embodiment, the resistor negative feedback network 5 is connected to the amplifying circuit 1 for adjusting the power gain, matching the impedance, and providing the amplifying circuit 1 with a dc current.
Referring to fig. 2, in an embodiment, the amplifying circuit 1 includes a first transistor V1 and a second transistor V2, wherein a base of the first transistor V1 is used as an input terminal of the amplifying circuit 1; the collector electrode of the first triode V1 is connected with the collector electrode of the second triode V2 to be used as the output end of the amplifying circuit 1; the emitter of the first triode V1 is respectively connected with the emitter of the second triode V2 and one of the connection points of the resistance negative feedback network 5; the emitter of the second transistor V2 is connected to the other connection point of the resistor degeneration network 5.
In an embodiment, the first transistor V1 and the second transistor V2 may be bipolar transistors of the same type, and the bipolar transistors may include one of Si BJT, SiGe HBT, GaAs HBT, and InP HBT.
In one embodiment, the resistive degeneration network 5 comprises: a fifth resistor R5 and a sixth resistor R6; one end of the fifth resistor R5 is connected with the emitter of the first triode V1, and the other end of the fifth resistor R5 is connected with one end of the sixth resistor R6 and grounded; the other end of the sixth resistor R6 is connected to the emitter of the second transistor V2.
In one embodiment, the bias network 2 includes a third transistor V3, a fourth transistor V4, a fifth transistor V5, a sixth transistor V6, a first resistor R1, a second resistor R2, and a third resistor R3; the emitter of the fifth triode V5 is grounded, and the collector is connected with the base and then connected with the emitter of the fourth triode V4; the collector and the base of the fourth triode V4 are connected and then connected with the emitter of the third triode V3; the base electrode of the third triode V3 is connected with one end of the second resistor R2; the other end of the second resistor R2 is respectively connected with the collector of the third triode V3 and the base of the sixth triode V6; one end of the first resistor R1 is connected with the collector of the third triode V3, and the other end of the first resistor R1 is connected with the collector of the sixth triode V6 and then is connected with the power supply VCC; an emitter of the sixth transistor V6 is connected to one end of the third resistor R3, and the other end of the third resistor R3 serves as an output terminal of the bias network 2.
In one embodiment, the RC negative feedback network 3 comprises: a first capacitor C1 and a fourth resistor R4, wherein one end of the first capacitor C1 is connected with the input end of the amplifying circuit 1; the other end of the first capacitor C1 is connected with one end of a fourth resistor R4; the other end of the fourth resistor R4 is connected to the output terminal of the amplifier circuit 1.
In an embodiment, the output network 4 comprises: a first inductor L1 and a second capacitor C2, wherein one end of the first inductor L1 is connected with the output end of the amplifying circuit 1; the other end of the first inductor L1 is connected with one end of the second capacitor C2 and is connected with a power supply VCC; the other terminal of the second capacitor C2 is connected to ground.
Specifically, the circuit is set to work at a temperature of-55-125 ℃, and the power supply voltage is 5V.
The current varies with temperature, see fig. 3, where the current varies linearly with temperature.
Referring to fig. 4, the gain is steadily increased with the temperature rise, and the overall gain temperature changes little.
Alternatively, the effect of outputting a 1dB compression point at-55 c is shown in fig. 5, where the output power and the input power have relatively small variations at the 1dB compression point.
Alternatively, the effect of outputting a 1dB compression point at 27 c is shown in fig. 6, where the output power and the input power have relatively small variations at the 1dB compression point.
Alternatively, the effect of outputting a 1dB compression point at 125 c is shown in fig. 7, where the output power and the input power have relatively small variations at the 1dB compression point.
In summary, the transistor V1 and the transistor V2 form a main amplifier circuit of the low-voltage medium-power rf amplifier based on the silicon-based BJT process of the present invention. The power supply voltage of the base electrode of the triode V1 is provided by a biasing network consisting of a triode V3, a triode V4, a triode V5, a triode V6, a resistor R1, a resistor R2 and a resistor R3, the temperature compensation effect is achieved, and the stability of gain and 1dB compression point output can be guaranteed. The resistor R5 and the resistor R6 form a resistor negative feedback network to stabilize the direct current working point of the circuit; a resistor-capacitor negative feedback network consisting of the resistor R4 and the capacitor C1 determines the gain of the amplifier and ensures the temperature stability; the power supply current is within 40 mA-65 mA, the output 1dB compression point is larger than 21dBm, the output 1dB compression point changes within 2dBm at high and low temperatures, and the gain changes within 0.3dB at high and low temperatures; the low-voltage medium-power radio frequency amplifier based on the silicon-based BJT process has the advantages of low power supply voltage work, small gain temperature change, small change of an output 1dB compression point, high output 1dB compression point and the like, and meets the application requirements of low-power consumption, broadband and high linearity in a radio frequency system of 5V or below. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A low-voltage medium-power radio-frequency amplifier based on a silicon-based BJT process, comprising:
an amplifying circuit;
the bias network is used for providing bias voltage for the input end of the amplifying circuit, and the output end of the bias network is connected with the input end of the amplifying circuit;
the resistance-capacitance negative feedback network is used for providing negative feedback for the amplifying circuit so as to determine the gain of the amplifying circuit; one end of the resistance-capacitance negative feedback network is connected with the input end of the amplifying circuit, and the other end of the resistance-capacitance negative feedback network is connected with the output end of the amplifying circuit;
the output network is used for connecting a power supply and providing bias voltage for the output end of the amplifying circuit;
and the resistance negative feedback network is used for adjusting the power gain and/or impedance matching of the amplifying circuit and providing direct current for the amplifying circuit.
2. The low-voltage medium-power radio-frequency amplifier based on the silicon-based BJT process as defined in claim 1, wherein said amplifying circuit includes: the base electrode of the first triode is used as the input end of the amplifying circuit; the collector electrode of the first triode is connected with the collector electrode of the second triode to serve as the output end of the amplifying circuit; the emitter of the first triode is respectively connected with the emitter of the second triode and one connection point of the resistor negative feedback network; and the emitter of the second triode is connected with the other connecting point of the resistance negative feedback network.
3. The low-voltage medium-power radio-frequency amplifier based on the silicon-based BJT process as defined in claim 1, wherein the bias network includes a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first resistor, a second resistor and a third resistor; the emitter of the fifth triode is grounded, and the collector is connected with the base and then connected with the emitter of the fourth triode; a collector electrode and a base electrode of the fourth triode are connected and then are connected with an emitting electrode of the third triode; the base electrode of the third triode is connected with one end of the second resistor; the other end of the second resistor is respectively connected with a collector electrode of the third triode and a base electrode of the sixth triode; one end of the first resistor is connected with the collector of the third triode, and the other end of the first resistor is connected with the collector of the sixth triode and then connected with a power supply; and an emitting electrode of the sixth triode is connected with one end of the third resistor, and the other end of the third resistor is used as an output end of the bias network.
4. The low-voltage medium-power radio-frequency amplifier based on the silicon-based BJT process as defined in claim 2, wherein said resistive negative feedback network comprises: a fifth resistor and a sixth resistor; one end of the fifth resistor is connected with the emitting electrode of the first triode, and the other end of the fifth resistor is connected with one end of the sixth resistor and grounded; the other end of the sixth resistor is connected with an emitting electrode of the second triode.
5. The low-voltage medium-power radio-frequency amplifier based on the silicon-based BJT process as defined in claim 1, wherein said RC negative feedback network comprises: one end of the first capacitor is connected with the input end of the amplifying circuit; the other end of the first capacitor is connected with one end of the fourth resistor; the other end of the fourth resistor is connected with the output end of the amplifying circuit.
6. The low-voltage medium-power radio-frequency amplifier based on the silicon-based BJT process as claimed in claim 1, wherein said output network comprises: the first inductor and the second capacitor, wherein one end of the first inductor is connected with the output end of the amplifying circuit; the other end of the first inductor is connected with one end of the second capacitor and is connected with a power supply; the other end of the second capacitor is grounded.
7. The low-voltage medium-power radio-frequency amplifier based on the silicon-based BJT process as defined in claim 2, wherein said first transistor and said second transistor are bipolar transistors of the same type.
8. The low-voltage medium-power radio-frequency amplifier based on the silicon-based BJT process as defined in claim 7, wherein the model of the first triode comprises one of the following types: si BJT, SiGe HBT, GaAs HBT, InP HBT.
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| CN202011519129.5A CN112653402A (en) | 2020-12-21 | 2020-12-21 | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process |
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| CN202011519129.5A CN112653402A (en) | 2020-12-21 | 2020-12-21 | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113346848A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit |
| CN113346846A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | Radio frequency differential amplifier based on silicon-based BJT process and method for improving gain temperature stability of radio frequency differential amplifier |
| CN114285385A (en) * | 2022-02-21 | 2022-04-05 | 成都芯翼科技有限公司 | Offset circuit of operational amplifier input current |
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| CN113346848A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit |
| CN113346846A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | Radio frequency differential amplifier based on silicon-based BJT process and method for improving gain temperature stability of radio frequency differential amplifier |
| CN114285385A (en) * | 2022-02-21 | 2022-04-05 | 成都芯翼科技有限公司 | Offset circuit of operational amplifier input current |
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Application publication date: 20210413 |
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| RJ01 | Rejection of invention patent application after publication |