CN102255605A - Adjustable active biasing circuit for radiofrequency power amplifier - Google Patents
Adjustable active biasing circuit for radiofrequency power amplifier Download PDFInfo
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- CN102255605A CN102255605A CN2011100073776A CN201110007377A CN102255605A CN 102255605 A CN102255605 A CN 102255605A CN 2011100073776 A CN2011100073776 A CN 2011100073776A CN 201110007377 A CN201110007377 A CN 201110007377A CN 102255605 A CN102255605 A CN 102255605A
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- triode
- reference voltage
- power amplifier
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Abstract
The invention discloses an adjustable active biasing circuit for a radiofrequency power amplifier. The emitter of a third triode is connected with the base of a radiofrequency transistor through a third resistor; the base of the third triode is connected with a reference voltage providing circuit; the collector of the third triode is connected with a control voltage which can be used for adjusting the working status of the third transistor; the reference voltage providing circuit comprises a first triode, a second triode, a first resistor and a second resistor; the base of the first triode is connected with the collector of the second triode, and is connected with a reference voltage through the first resistor; the collector of the first triode is connected to the reference voltage; the emitter of the first triode is connected with the base of the second triode, and is grounded through the second resistor; the emitter of the second triode is grounded; and the base of the first triode is connected with the base of the third triode. By adjusting the control voltage to change the working status of a biasing tube, the sensitivity of biasing current to the reference voltage and the ambient temperature can be lowered.
Description
Technical field
The present invention relates to the radio-frequency power amplifier technology in the wireless communication field, relate in particular to a kind of adjustable active biasing circuit that is used for radio-frequency power amplifier.
Background technology
The fast development of wireless communication system has proposed more and more higher requirement to the performance of Wireless Telecom Equipment.Radio-frequency power amplifier is the core component of transmitter, and its power output has determined the regional extent that transmitter can cover, and power added efficiency has determined the energy consumption and the heat radiation of transmitter, the linearity decision distortion factor that transmitter transmitted.Because the new generation of wireless communication system adopts non-constant envelope modulation mode mostly, the system linearity degree becomes the index that needs are considered emphatically.In order to improve linearity, radio-frequency power amplifier can not be driven to the saturation region, and must adopt the method for back-off to make power amplifier be operated in linear zone.Rollback is many more, and linearity is good more, but the efficient of power amplifier also can be low more.In order to take into account linearity and efficient, the design of power amplifier generally all can adopt various linearization techniques to reach balance between linearity and the efficient.
Part among the square frame A shown in Figure 1 is a kind of traditional radio-frequency power amplifier linear biasing circuit, comprise that the triode Q1 that connected by diode structure, the reference voltage that Q2 constitutes provide circuit and the triode Q3 of bias current is provided to radio-frequency (RF) transistors Q4, wherein the base stage of triode links to each other with collector electrode, the diode structure of formation.Triode Q1, Q2 constitute reference voltage provides circuit, is used to produce a reference voltage, base bias voltage is provided for triode Q3, direct current biasing is provided for radio-frequency (RF) transistors Q4 by resistance R 2 then.The collector electrode of Q1 links to each other by the collector electrode that resistance R 1 is connected to triode Q3, and is connected to same reference voltage V jointly
REF
Because triode Q1, Q2, Q3 and Q4 adopt the triode of same kind, so when variations in temperature causes that the triode junction voltage changes, the emitter junction voltage of these several triodes will produce the variation of same trend, thereby make this biasing circuit have compensating action to variations in temperature.The capacitor C 1 main linearity that rises that is connected between triode Q3 base stage and the ground turns usefulness into.As input radio frequency power RF
IN
When big, the base voltage of radio-frequency (RF) transistors Q4 can descend, and mutual conductance reduces, and can make it produce the non-linear phenomena of gain compression.After increasing capacitor C 1, can make triode Q3 and capacitor C 1 constitute a radio frequency path to ground, when input radio frequency power is big, the voltage between triode Q3 base stage and emitter also will descend like this, thereby reach the effect that the base voltage to radio-frequency (RF) transistors Q4 compensates.
This traditional biasing circuit is simple and easy to usefulness, but it is to reference voltage V
REF
Variation very responsive.Work as V
REF
When changing within the specific limits, the relative variation of the bias current of radio-frequency (RF) transistors Q4 is very big, and this just makes in actual applications possibly owing to supply voltage shakiness or the excessive radio-frequency power amplifier that makes of variation of ambient temperature enter abnormal operating state.
Summary of the invention
The present invention seeks to: reference voltage is fluctuateed and the highstrung shortcoming of variation of ambient temperature at the conventional radio frequency bias circuit of power amplifier, a kind of adjustable active biasing circuit that is used for radio-frequency power amplifier is provided, can reduces the susceptibility of bias current reference voltage and ambient temperature by the operating state of regulating control voltage change offset.
Technical scheme of the present invention is: a kind of adjustable active biasing circuit that is used for radio-frequency power amplifier, comprise the 3rd triode and the 3rd resistance, the emitter of the 3rd triode connects the base stage of radio-frequency (RF) transistors by the 3rd resistance, the base stage of the 3rd triode is connected with reference voltage circuit is provided, the control voltage V of the collector electrode of described the 3rd triode and adjusting the 3rd triode operating state
CON
Link to each other, described reference voltage provides circuit to comprise first triode, second triode, first resistance and second resistance, and the base stage of described first triode links to each other with the collector electrode of second triode, and through first resistance and reference voltage V
REF
Link to each other; The collector electrode of described first triode is connected to reference voltage V
REF
The emitter of described first triode links to each other with second transistor base, and by second grounding through resistance; The grounded emitter of described second triode; The base stage of described first triode connects the base stage of described the 3rd triode.
Further, the described adjustable active biasing circuit that is used for radio-frequency power amplifier also comprises first electric capacity, is connected between the base stage and ground of the 3rd triode.
Advantage of the present invention is: compare with the conventional radio frequency bias circuit of power amplifier, the present invention is regulating V
REF
Under the situation that obtains appropriate reference voltage, can be further by regulating V
CON
Make triode Q3 be operated in the saturation region, improve the linearity of radio-frequency power amplifier, thereby make power amplifier under comparatively abominable condition of work and environment, keep normal operating conditions to reduce the susceptibility of biasing circuit to power-supply fluctuation and ambient temperature.
Description of drawings
Below in conjunction with drawings and Examples the present invention is further described:
Fig. 1 is the circuit diagram of the traditional active biased circuit of radio-frequency power amplifier;
Fig. 2 is the circuit theory diagrams of embodiments of the invention.
Embodiment
Embodiment: as shown in Figure 2, be the adjustable active biasing circuit of present embodiment in the frame of broken lines B, comprise that reference voltage provides circuit, the triode Q3 of bias current and the capacitor C 1 of the raising linearity are provided.Wherein reference voltage provides circuit to be made of triode Q1, Q2 and resistance R 1, R2, and the base stage of triode Q1 links to each other with the collector electrode of triode Q2, and is connected to reference voltage V by resistance R 1
REF
, the collector electrode of triode Q1 is connected to V
REF
, the emitter of triode Q1 links to each other with the base stage of triode Q2, and by resistance R 2 ground connection, the grounded emitter of triode Q2; One end of capacitor C 1 links to each other other end ground connection with the base stage of triode Q3; The base stage of triode Q3 links to each other with the base stage of triode Q1, and the collector electrode of triode Q3 is connected to control voltage V
CON
, the emitter of triode Q3 is connected to the base stage of radio-frequency (RF) power amplification pipe Q4 by resistance R 3.
The reference voltage that triode Q1, Q2, resistance R 1, R2 constitute provides circuit can produce a reference voltage that is about twice triode junction voltage, a stable base bias voltage is provided for triode Q3, and triode Q1, Q2, resistance R 1, R2 constitute a feedback control loop, and reference voltage is had temperature compensation function.Capacitor C 1, triode Q3, resistance R 3 constitute a radio frequency path, when the input power of power amplifier is big, this path can reduce the junction voltage of triode Q3, thereby compensation radio-frequency (RF) power amplification pipe Q4 is because the base voltage sloping portion that input power causes more greatly, this can slow down the gain compression phenomenon that power amplifier occurs greatly owing to input power, improves the linearity of power amplifier.Triode Q3 produces a bias current, offers radio-frequency (RF) power amplification pipe Q4 by resistance R 3.
Regulate control voltage V
CON
Can make triode Q3 be operated in different states, work as V
CE3
V
KNEE
The time, triode Q3 is operated in the amplification region; Work as V
CE3
＜V
KNEE
The time, triode Q3 is operated in the saturation region; V wherein
KNEE
Refer to the breakover point voltage of triode Q3 from the amplification region to the saturation region.When triode Q3 was operated in the saturation region, its collector current reduced with the rate of change of base voltage, so when supply voltage or environmental temperature fluctuation cause reference voltage unstable more greatly, can be by adjusting V
CON
Make triode Q3 be operated in the saturation region and reduce it reference voltage V
REF
With the susceptibility of ambient temperature, make power amplifier under abominable condition of work and environment, keep operate as normal.
The above only is the preferred embodiments of the present invention, can not limit scope of the invention process with this, and all simple conversion of doing according to claim of the present invention and description all should still belong to the protection range that the present invention covers.
Claims (2)
1. adjustable active biasing circuit (B) that is used for radio-frequency power amplifier, comprise the 3rd triode (Q3) and the 3rd resistance (R3), the emitter of the 3rd triode (Q3) connects the base stage of radio-frequency (RF) transistors (Q4) by the 3rd resistance (R3), the base stage of the 3rd triode (Q3) is connected with reference voltage provides circuit, it is characterized in that: the control voltage V of the collector electrode of described the 3rd triode (Q3) and adjusting the 3rd triode (Q3) operating state
CONLink to each other, described reference voltage provides circuit to comprise first triode (Q1), second triode (Q2), first resistance (R1) and second resistance (R2), the base stage of described first triode (Q1) links to each other with the collector electrode of second triode (Q2), and through first resistance (R1) and reference voltage V
REFLink to each other; The collector electrode of described first triode (Q1) is connected to reference voltage V
REFThe emitter of described first triode (Q1) links to each other with the base stage of second triode (Q2), and by second resistance (R2) ground connection; The grounded emitter of described second triode (Q2); The base stage of described first triode (Q1) connects the base stage of described the 3rd triode (Q3).
2. according to the adjustable active biasing circuit (B) that is used for radio-frequency power amplifier described in the claim 1, it is characterized in that: also comprise first electric capacity (C1), be connected between the base stage and ground of the 3rd triode (Q3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100073776A CN102255605A (en) | 2011-01-14 | 2011-01-14 | Adjustable active biasing circuit for radiofrequency power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100073776A CN102255605A (en) | 2011-01-14 | 2011-01-14 | Adjustable active biasing circuit for radiofrequency power amplifier |
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| CN102255605A true CN102255605A (en) | 2011-11-23 |
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| CN2011100073776A Pending CN102255605A (en) | 2011-01-14 | 2011-01-14 | Adjustable active biasing circuit for radiofrequency power amplifier |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102710224A (en) * | 2012-06-14 | 2012-10-03 | 无锡中普微电子有限公司 | Multi-mode power amplifier and corresponding mobile communication equipment |
| CN104333335A (en) * | 2014-11-06 | 2015-02-04 | 中国电子科技集团公司第十三研究所 | Adaptive bipolar transistor power amplifier linear biasing circuit |
| CN104682898A (en) * | 2015-02-15 | 2015-06-03 | 上海唯捷创芯电子技术有限公司 | Active bias circuit for power amplifier and communication equipment |
| CN106055008A (en) * | 2016-06-15 | 2016-10-26 | 泰凌微电子（上海）有限公司 | Current biasing circuit and method for improving positive temperature coefficient |
| CN106849886A (en) * | 2015-12-04 | 2017-06-13 | 大唐移动通信设备有限公司 | A kind of compensation biasing circuit and power amplifier device for power amplifier |
| CN107395130A (en) * | 2017-06-12 | 2017-11-24 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency power amplification modules and implementation method with high linearity and power added efficiency |
| CN109802640A (en) * | 2017-11-16 | 2019-05-24 | 深圳市中兴微电子技术有限公司 | A kind of radio-frequency power amplifier |
| CN109818587A (en) * | 2017-11-21 | 2019-05-28 | 锐迪科微电子科技（上海）有限公司 | A kind of adaptive-biased radio-frequency power amplifier |
| CN110311632A (en) * | 2019-06-13 | 2019-10-08 | 广东工业大学 | A kind of adaptive bias circuit with high temperature drift rejection ability |
| CN111726092A (en) * | 2019-03-19 | 2020-09-29 | 三星电机株式会社 | Bias circuit and amplifying device with temperature compensation function |
| WO2020228133A1 (en) * | 2019-05-15 | 2020-11-19 | 河源广工大协同创新研究院 | Self-adaptive linearized radio frequency offset module and circuit used by same |
| CN112653402A (en) * | 2020-12-21 | 2021-04-13 | 中国电子科技集团公司第二十四研究所 | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process |
| CN112803900A (en) * | 2021-03-30 | 2021-05-14 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
| CN113271069A (en) * | 2021-05-14 | 2021-08-17 | 广东工业大学 | Temperature compensation bias circuit of radio frequency power amplifier and radio frequency power amplifier |
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| CN101079598A (en) * | 2006-04-10 | 2007-11-28 | 松下电器产业株式会社 | High-frequency power amplifier and communication device |
| CN101394152A (en) * | 2007-09-20 | 2009-03-25 | 锐迪科微电子（上海）有限公司 | Radio frequency power amplifier circuit |
| CN201409116Y (en) * | 2009-04-30 | 2010-02-17 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier biasing circuit |
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| CN101079598A (en) * | 2006-04-10 | 2007-11-28 | 松下电器产业株式会社 | High-frequency power amplifier and communication device |
| CN101394152A (en) * | 2007-09-20 | 2009-03-25 | 锐迪科微电子（上海）有限公司 | Radio frequency power amplifier circuit |
| CN201409116Y (en) * | 2009-04-30 | 2010-02-17 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier biasing circuit |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102710224B (en) * | 2012-06-14 | 2015-09-23 | 无锡中普微电子有限公司 | Multimode power amplifier and corresponding mobile communication equipment |
| CN102710224A (en) * | 2012-06-14 | 2012-10-03 | 无锡中普微电子有限公司 | Multi-mode power amplifier and corresponding mobile communication equipment |
| CN104333335A (en) * | 2014-11-06 | 2015-02-04 | 中国电子科技集团公司第十三研究所 | Adaptive bipolar transistor power amplifier linear biasing circuit |
| US10153733B2 (en) | 2015-02-15 | 2018-12-11 | Shanghai Vanchip Technologies Co., Ltd. | Active bias circuit for power amplifier, and mobile terminal |
| CN104682898A (en) * | 2015-02-15 | 2015-06-03 | 上海唯捷创芯电子技术有限公司 | Active bias circuit for power amplifier and communication equipment |
| WO2016127752A1 (en) * | 2015-02-15 | 2016-08-18 | 上海唯捷创芯电子技术有限公司 | Active bias circuit and mobile terminal for power amplifier |
| CN104682898B (en) * | 2015-02-15 | 2017-03-22 | 上海唯捷创芯电子技术有限公司 | Active bias circuit for power amplifier and communication equipment |
| CN106849886A (en) * | 2015-12-04 | 2017-06-13 | 大唐移动通信设备有限公司 | A kind of compensation biasing circuit and power amplifier device for power amplifier |
| CN106055008B (en) * | 2016-06-15 | 2019-01-11 | 泰凌微电子（上海）有限公司 | Current biasing circuit and the method for improving positive temperature coefficient |
| CN106055008A (en) * | 2016-06-15 | 2016-10-26 | 泰凌微电子（上海）有限公司 | Current biasing circuit and method for improving positive temperature coefficient |
| CN107395130B (en) * | 2017-06-12 | 2023-04-07 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency power amplifier module with high linearity and power additional efficiency and implementation method |
| CN107395130A (en) * | 2017-06-12 | 2017-11-24 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency power amplification modules and implementation method with high linearity and power added efficiency |
| CN109802640A (en) * | 2017-11-16 | 2019-05-24 | 深圳市中兴微电子技术有限公司 | A kind of radio-frequency power amplifier |
| CN109818587A (en) * | 2017-11-21 | 2019-05-28 | 锐迪科微电子科技（上海）有限公司 | A kind of adaptive-biased radio-frequency power amplifier |
| CN109818587B (en) * | 2017-11-21 | 2024-02-27 | 锐迪科微电子科技（上海）有限公司 | Self-adaptive bias radio frequency power amplifier |
| CN111726092A (en) * | 2019-03-19 | 2020-09-29 | 三星电机株式会社 | Bias circuit and amplifying device with temperature compensation function |
| WO2020228133A1 (en) * | 2019-05-15 | 2020-11-19 | 河源广工大协同创新研究院 | Self-adaptive linearized radio frequency offset module and circuit used by same |
| CN110311632A (en) * | 2019-06-13 | 2019-10-08 | 广东工业大学 | A kind of adaptive bias circuit with high temperature drift rejection ability |
| CN112653402A (en) * | 2020-12-21 | 2021-04-13 | 中国电子科技集团公司第二十四研究所 | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process |
| CN112803900A (en) * | 2021-03-30 | 2021-05-14 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
| CN112803900B (en) * | 2021-03-30 | 2021-07-16 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
| CN113271069A (en) * | 2021-05-14 | 2021-08-17 | 广东工业大学 | Temperature compensation bias circuit of radio frequency power amplifier and radio frequency power amplifier |
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Application publication date: 20111123 |
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