CN106055008A - Current biasing circuit and method for improving positive temperature coefficient - Google Patents
Current biasing circuit and method for improving positive temperature coefficient Download PDFInfo
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- CN106055008A CN106055008A CN201610423514.7A CN201610423514A CN106055008A CN 106055008 A CN106055008 A CN 106055008A CN 201610423514 A CN201610423514 A CN 201610423514A CN 106055008 A CN106055008 A CN 106055008A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
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Abstract
The invention relates to the field of integral circuit design, and discloses a current biasing circuit and a method for improving a positive temperature coefficient. The current biasing circuit for increasing the positive temperature coefficient includes a current source proportional to the absolute temperature, a first triode and a first resistor; an input end of the current source is connected to a power source end of the current biasing circuit, and an output end of the current source is connected to a collector electrode and a base electrode of the first triode and one end of the first resistor; the other end of the first resistor is connected to a ground; the current of an emission electrode of the first triode serves as the reference output current, and then the current is applied to a circuit module through mirror image output. The current biasing circuit can generate the biasing current capable of improving the positive temperature coefficient, and can be used for a certain radio-frequency circuit so as to solve the problem of performance deterioration of the radio-frequency circuit at the high temperature.
Description
Technical field
The present invention relates to IC design field, particularly to a kind of current biasing circuit and improve positive temperature coefficient
Method.
Background technology
A lot of radio-frequency integrated circuit module at high temperature certain some performance all can a certain degree of deteriorate, and this is due to temperature
Raising, a lot of technological parameters inside circuit all can change so that whole circuit performance deteriorates.Such as, one traditional
It is applied to the amplifier circuit in low noise of radio frequency leading portion, increases as load, voltage as it is shown in figure 1, which employs spiral inductance 11
Benefit can simply represent such as formula (1):
Wherein gm1For the mutual conductance of low-noise amplifier input pipe, Q is the quality factor of load inductance Ld11, and ω is load electricity
The resonant frequency of operation of sense 11, L is the inductance value of load inductance 11.
But it is as the rising of temperature, g in formula (1)m1And induction quality factor Q-value all can change.Due to
When being in saturation of nmos pass transistor 13 mutual conductance, mutual conductance can be with approximate expression as formula (2):
And electron mobility μnWith the relation of absolute temperature, such as formula (3):
Along with the rising of temperature, electron mobility will reduce.Simultaneously in formula (2), electric current IDBe one with absolute temperature
Spend the current source of be directly proportional (Proportional to Absolute Temperature is called for short " PTAT "), i.e. absolute temperature
Ratio circuit current source, available formula (4) represents:
ID∝T (4)
So according to above formula (2) to (4),
The input mutual conductance g to pipe nmos pass transistor 13mRelation such as formula (5) with absolute temperature:
Formula (5) illustrates, along with the rising of temperature, even if under PTAT current source compensates, and gmAlso it is as the liter of temperature
High and reduce.The quality factor q of load inductance 13 is simultaneously:
It is with series parasitic resistance RsRelevant, and along with the rising of temperature, the metal level electrical conductivity of coiling inductance is along with temperature
The rising of degree and reduce, thus cause dead resistance RsBecoming big, so knowable to formula (6), Q-value raises along with temperature and drops
Low, can be by the relational representation of Q with absolute temperature:
Q∝T-A (7)
Wherein A > 0, i.e. Q are negative temperature coefficient.
According to formula (1) gain formula it is,
Gain reduces therewith the rising of temperature, but this will directly affects the gain of whole radio frequency transceiver links
And noise coefficient so that the sensitivity of receptor declines.Equally at the RF mixer received on link (using inductance as negative
Load situation) and emitter on on-chip power amplifier all can run into same problem.
And in the middle of present RF IC design, bias current is typically by following three kinds of situations:
1) constant transconductance current source (Constant-gm Current).
2) band-gap reference produces a temperature independent current source by V-I.
3) and the PTAT current source produced by band-gap reference.
Obviously, in three cases above, only the third situation size of current just can increase along with temperature and become big, now
Major part RF IC have employed the third current source current reference as radio-frequency module, although this is to a certain degree
On can compensate the deterioration of circuit performance under high temperature, but degree of compensation is limited, yet suffers from penalty and ask under high temperature
Topic.
Summary of the invention
The purpose of embodiment of the present invention is provide a kind of current biasing circuit strengthening positive temperature coefficient and just improve
The method of temperature coefficient, improves radio circuit at high temperature degradation problem.
For solving above-mentioned technical problem, embodiments of the present invention provide a kind of current offset strengthening positive temperature coefficient
Circuit, comprises:
The current source of PTAT, the first audion and the first resistance；
The power end of current biasing circuit described in the input of current source, outfan connect the first audion colelctor electrode,
Base stage and one end of the first resistance；The other end ground connection of the first resistance；
The electric current of the first transistor emitter exports electric current as the benchmark of current biasing circuit.
Embodiments of the present invention additionally provide a kind of method utilizing current biasing circuit to improve positive temperature coefficient, electric current
Biasing circuit comprises:
The current source of PTAT, the first audion and the first resistance；The method improving bias current includes:
Current source is accessed the colelctor electrode of the first audion, base stage and one end of the first resistance；
By the other end ground connection of the first resistance；
Being exported by the electric current of the emitter stage of the first audion, the benchmark as current biasing circuit exports electric current.
Embodiment of the present invention in terms of existing technologies, utilizes the first audion of diode connected mode to produce one
Voltage Vbe, the Vbe voltage of individual negative temperature coefficient is i.e. the voltage between the base stage of the first audion and transmitting, then by Vbe electricity
Pressure acts on the first resistance, produces the electric current of a negative temperature coefficient.Owing to we use PTAT's to have positive temperature coefficient
Current source, so flowing through the first audion electric current is that PTAT current deducts and acts on negative temperature parameter current on electric current, thus
Current temperature coefficient at the first transistor emitter obtained becomes big, thus strengthens the temperature system of reference current source in circuit
Number.In embodiment of the present invention, the positive temperature coefficient of the electric current of biasing circuit can be improved, effectively improve radio circuit at height
The lower degradation problem of temperature.
It addition, current biasing circuit also includes: mirror module, the input of mirror module connects the transmitting of the first audion
Pole and base stage, outfan is as the outfan of current biasing circuit.After mirror module, can preferably obtain the inclined of output
Put electric current.
It addition, the first resistance is variable resistance.Variable resistance is utilized can dynamically to adjust the shunting value size of current source, from
And indirectly adjust current source just temperature and read the size of coefficient so that circuit can be conditioned more flexibly.
It addition, current biasing circuit also includes: the first n channel metal oxide semiconductor field effect transistor NMOS tube；
The drain and gate of the first NMOS tube connects the outfan of current biasing circuit, the source ground of the first NMOS tube.Utilize one
NMOS tube makes current biasing circuit preferably access load.
It addition, current biasing circuit also includes: the 3rd resistance；3rd resistant series current biasing circuit input and
Between outfan, one end of the 3rd resistance is as the outfan of current biasing circuit.The 3rd resistance, isolation radiofrequency signal is utilized to enter
Enter in biasing circuit, it is to avoid biasing circuit module is interfered.
Accompanying drawing explanation
Fig. 1 is the circuit diagram according to the amplifier circuit in low noise being applied to radio frequency leading portion in background of invention；
Fig. 2 is the circuit according to a kind of current biasing circuit strengthening positive temperature coefficient in first embodiment of the invention
Figure；
Fig. 3 is the current biasing circuit according to a kind of simple enhancing positive temperature coefficient in first embodiment of the invention
Circuit diagram；
Fig. 4 shows according to the circuit of a kind of current biasing circuit strengthening positive temperature coefficient in second embodiment of the invention
It is intended to；
Fig. 5 is according to the circuit of a kind of current biasing circuit strengthening positive temperature coefficient in second embodiment of the invention
Figure；
Fig. 6 is according to the circuit of a kind of current biasing circuit strengthening positive temperature coefficient in third embodiment of the invention
Figure；
Fig. 7 is according to the circuit of a kind of current biasing circuit strengthening positive temperature coefficient in four embodiment of the invention
Figure；
Fig. 8 is according to a kind of current biasing circuit in fifth embodiment of the invention and the method that improves positive temperature coefficient
Flow chart.
Detailed description of the invention
For making the purpose of embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing to this
Bright each embodiment is explained in detail.But, it will be understood by those skilled in the art that and respectively implement in the present invention
In mode, in order to make reader be more fully understood that, the application proposes many ins and outs.But, even if not having these technology thin
Joint and many variations based on following embodiment and amendment, it is also possible to realize the application technical scheme required for protection.
First embodiment of the present invention relates to a kind of current biasing circuit strengthening positive temperature coefficient, including: definitely temperature
Current source (PATA), the first audion (can be NPN type triode) and the first resistance that degree is directly proportional, physical circuit figure such as figure
Shown in 2.
Specifically, the input of current source 21 connects the power end of current biasing circuit, and outfan connects the one or three pole
The colelctor electrode of pipe 22, base stage and one end of the first resistance 23；The other end ground connection of the first resistance 23；First audion 22 emitter stage
Electric current as the output electric current of current biasing circuit.
For the circuit operation principle being more fully understood that in present embodiment, first carry out circuit operation principle simply and be situated between
Continue, physical circuit schematic diagram as it is shown on figure 3, in Fig. 3 current source I131 be the positive temperature coefficient current source of PTAT, formula can be used
(8) represent:
I1∝k1T (8)；
Wherein, K1 is positive temperature coefficient, more than 0.
Current source I233 is the current source of a negative temperature coefficient, and the generation of its negative temperature coefficient is to pass through negative temperature coefficient
Voltage Vbe effect resistance on obtain, specifically can use the formula (9) to represent:
I2∝k2T (2)；
Wherein, K2 is negative temperature coefficient, less than 0.
And I3 current source is I1-I2 in Fig. 3, then
I3=I1-I2=K1T-K2T=(K1-K2)T (3)；
The inventors discovered that, due to K2<0, so, the temperature coefficient slope of the I3 so obtained is K3=(K1-K2)>
K1, wherein, temperature coefficient slope K1, K2, K3 of electric current I1, I2, I3.
So the temperature coefficient that we obtain current source I3 substantially becomes greatly relative to I1, thus improve the electricity of biasing circuit
The positive temperature coefficient in stream source.
Specifically, the circuit diagram shown in Fig. 2, the PTAT current source 21 audion by a diode connected mode
22 (NPN1), Va point in the drawings produces the voltage of a Vbe, and this Vbe voltage has negative temperature coefficient, Vbe voltage simultaneously
It is added in fixed resistance value resistance R23 two ends, produces electric current I2'=Vbe/R, so, this creates the terminal a negative temperature system
The current source I2' of number, a PTAT current I1'21 part forms I2', and another part flows through colelctor electrode C and the transmitting of audion 22
Machine E produces electric current I3', and the size of I3' is I1'-I2', and the analysis of combined circuit rationale understands, the temperature of electric current I3'
Coefficient can increase, thus improves the positive temperature coefficient of biasing circuit, and utilizes electric current I3' generation one to can apply to actual electricity
Current source branch in the module of road, improves radio circuit at high temperature degradation problem.
Embodiment of the present invention in terms of existing technologies, utilizes the first audion of diode connected mode to produce one
Voltage Vbe, the Vbe voltage of individual negative temperature coefficient is i.e. the voltage between the base stage of the first audion and transmitting, then by Vbe electricity
Pressure acts on the first resistance, produces the electric current of a negative temperature coefficient.Owing to we use PTAT's to have positive temperature coefficient
Current source, so flowing through the first audion electric current is that PTAT current deducts and acts on negative temperature parameter current on electric current, thus
Current temperature coefficient at the first transistor emitter obtained becomes big, thus strengthens the temperature system of reference current source in circuit
Number.In embodiment of the present invention, the positive temperature coefficient of the electric current of biasing circuit can be improved, effectively improve radio circuit at height
The lower degradation problem of temperature.
Second embodiment of the present invention relates to a kind of current biasing circuit.Second embodiment is to the first embodiment
Further optimization, main optimize in place of be: in second embodiment of the invention, will the first embodiment just produce
Temperature read coefficient strengthen electric current carry out mirror image output, it specifically includes that mirror module, physical circuit schematic diagram as shown in Figure 4, mirror
As the input of module 44 connects emitter stage and the base stage of the first audion 42, outfan is as the output of current biasing circuit
End, after mirror module, can preferably obtain the benchmark output electric current of current biasing circuit.
It is noted that mirror module 44 utilizes audion and P-channel metal-oxide-semiconductor field-effect transistor
PMOS carries out mirror image, the most as shown in Figure 5:
First audion 42 is NPN type triode, and mirror module specifically includes: second audion the 51, second resistance 52,
One PMOS the 53, second PMOS the 54, the 3rd PMOS 55 and the 4th PMOS 56；Second audion 51 is NPN type triode,
The base stage of the second audion 51 and the base stage of the first audion 42 connect, the emitter stage of the second audion 51 and the first audion 52
Emitter stage connect, and ground connection, the colelctor electrode of the second audion 51 and one end of the second resistance 52, the grid of the second PMOS 54
Connect with the grid of the 4th PMOS 56, the other end of the second resistance 52 and the drain electrode of the second PMOS 54, the first PMOS 53
Grid and the 3rd PMOS 55 grid connect；The source electrode of the second PMOS 52 and the drain electrode of the first PMOS 53 connect, the
The drain electrode of three PMOS 55 and the source electrode of the 4th PMOS 56 connect；The source electrode of the first PMOS 53 and the source of the 3rd PMOS 55
Pole is commonly connected to the power end of current biasing circuit；Defeated as current biasing circuit of the electric current of the drain electrode of the 4th PMOS 56
Go out electric current.
In terms of existing technologies, the main distinction and effect are present embodiment: after mirror module, Ke Yigeng
The good bias current obtaining output, and can apply to other circuit modules, improve the portability of circuit.
Third embodiment of the present invention relates to a kind of current biasing circuit.3rd embodiment is at the first embodiment
On further optimization, main optimize in place of be: the first resistance is variable resistance, the most as shown in Figure 6.
Specifically, utilize variable resistance, the positive temperature coefficient of electric current can be adjusted dynamically so that the adjustment of circuit is more
Add flexibly.
It should be noted that the variable resistance in present embodiment can be applied equally in the second embodiment, due to
Application variable resistance replaces other elements of the second embodiment of fixed resistance value resistance not change, the most superfluous at this
State.
In terms of existing technologies, the main distinction and effect are present embodiment: utilize the variable resistance can be dynamic
Adjust the positive temperature coefficient size of electric current, thus indirectly adjust the temperature coefficient size of circuit output so that circuit can be more
Add and be conditioned flexibly.
4th embodiment of the present invention relates to a kind of current biasing circuit.4th embodiment is the first embodiment
Improve further, mainly the improvement is that: in the 4th embodiment, current biasing circuit also includes: the first N-channel metal oxygen
Compound semiconductor field effect transistor NMOS tube and the 3rd resistance so that the current biasing circuit of present embodiment preferably accesses
Load.
In present embodiment as a example by low-noise amplifier, the most as shown in Figure 7:
Specifically, the drain and gate of the first NMOS tube 72 connects the outfan of current biasing circuit, the first NMOS tube
The source ground of 72；3rd resistance 73 is connected between the input of current biasing circuit and outfan, the one of the 3rd resistance 73
Holding the outfan as current biasing circuit, current source 71 is the current source that a temperature coefficient strengthens, and utilizes the first NMOS tube
72 and the 3rd resistance 73 current biasing circuit can be made preferably to access load.
It is noted that loading section is made up of inductance 75, electric capacity 76 and NMOS tube 77, load is also a low noise
Amplifier, its operation principle is roughly the same with loading section in Fig. 1, does not repeats them here.
Additionally, in actual applications, the current biasing circuit in present embodiment is except can apply to present embodiment
In the low-noise amplifier mentioned, it is also possible to be applied to other circuit, will not enumerate at this.
Fifth embodiment of the invention relates to a kind of method utilizing current biasing circuit to improve bias current, wherein, electricity
Stream biasing circuit includes: current source (PATA), the first audion and first resistance of PTAT.
Improve bias current method, idiographic flow as shown in Figure 8, including:
Step 801: current source is accessed the colelctor electrode of the first audion, base stage and one end of the first resistance.
Step 802: by the other end ground connection of the first resistance.
Step 803: exported by the electric current of the emitter stage of the first audion, the benchmark as current biasing circuit exports electricity
Stream.
Embodiment of the present invention in terms of existing technologies, utilizes the first audion of diode connected mode to produce one
Voltage Vbe, the Vbe voltage of individual negative temperature coefficient is i.e. the voltage between the base stage of the first audion and transmitting, then by Vbe electricity
Pressure acts on the first resistance, produces the electric current of a negative temperature coefficient.Owing to we use PTAT's to have positive temperature coefficient
Current source, so flowing through the first audion electric current is that PTAT current deducts and acts on negative temperature parameter current on electric current, thus
Current temperature coefficient at the first transistor emitter obtained becomes big, thus strengthens the temperature system of reference current source in circuit
Number.In embodiment of the present invention, the positive temperature coefficient of the electric current of biasing circuit can be improved, effectively improve radio circuit at height
The lower degradation problem of temperature.
It is seen that, present embodiment is the embodiment of the method corresponding with the first embodiment, and present embodiment can be with
First embodiment is worked in coordination enforcement.The relevant technical details mentioned in first embodiment the most still has
Effect, in order to reduce repetition, repeats no more here.Correspondingly, the relevant technical details mentioned in present embodiment is also applicable in
In first embodiment.
It will be understood by those skilled in the art that the respective embodiments described above are to realize the specific embodiment of the present invention,
And in actual applications, can to it, various changes can be made in the form and details, without departing from the spirit and scope of the present invention.
Claims (10)
1. the current biasing circuit strengthening positive temperature coefficient, it is characterised in that including: the electric current of PTAT
Source, the first audion and the first resistance；
The input of described current source connects the power end of described current biasing circuit, and outfan connects described first audion
Colelctor electrode, base stage and one end of described first resistance；The other end ground connection of described first resistance；
The electric current of described first transistor emitter exports electric current as the benchmark of described current biasing circuit.
The current biasing circuit of enhancing positive temperature coefficient the most according to claim 1, it is characterised in that described one or three pole
Pipe is NPN type triode.
The current biasing circuit of enhancing positive temperature coefficient the most according to claim 1, it is characterised in that described current offset
Circuit also includes: mirror module, and the input of described mirror module connects emitter stage and the base stage of described first audion, output
Hold the outfan as described current biasing circuit.
The current biasing circuit of enhancing positive temperature coefficient the most according to claim 3, it is characterised in that described mirror module
Audion and P-channel metal-oxide-semiconductor field-effect transistor PMOS is utilized to carry out mirror image.
The current biasing circuit of enhancing positive temperature coefficient the most according to claim 4, it is characterised in that described one or three pole
Pipe is NPN type triode, and described mirror module specifically includes: the second audion, the second resistance, the first PMOS, the 2nd PMOS
Pipe, the 3rd PMOS and the 4th PMOS；
Described second audion is NPN type triode, and the base stage of described second audion and the base stage of described first audion are even
Connecing, the emitter stage of described second audion is connected with the emitter stage of described first audion, and ground connection, described second audion
Colelctor electrode is connected with the grid of one end of described second resistance, the grid of described second PMOS and described 4th PMOS, institute
State the other end and the drain electrode of described second PMOS, the grid of described first PMOS and described 3rd PMOS of the second resistance
Grid connect；
The drain electrode of the source electrode of described second PMOS and described first PMOS connects, the drain electrode of described 3rd PMOS and described
The source electrode of the 4th PMOS connects；
The source electrode of described first PMOS and the source electrode of described 3rd PMOS are commonly connected to the electricity of described current biasing circuit
Source；
The electric current of the drain electrode of described 4th PMOS is as the output electric current of described current biasing circuit.
The current biasing circuit of enhancing positive temperature coefficient the most as claimed in any of claims 1 to 5, its feature exists
In, described first resistance is variable resistance.
The current biasing circuit of enhancing positive temperature coefficient the most according to claim 1, it is characterised in that described current offset
Circuit also includes: the first n channel metal oxide semiconductor field effect transistor NMOS tube；
The drain and gate of described first NMOS tube connects the outfan of described current biasing circuit, the source of described first NMOS tube
Pole ground connection.
The current biasing circuit of enhancing positive temperature coefficient the most according to claim 1, it is characterised in that described current offset
Circuit also includes: the 3rd resistance；Described 3rd resistant series between the input and outfan of described current biasing circuit, institute
State the one end outfan as described current biasing circuit of the 3rd resistance.
9. one kind utilizes the method that current biasing circuit improves positive temperature coefficient, it is characterised in that described current biasing circuit bag
Include: the current source of PTAT, the first audion and the first resistance；The method of described raising bias current includes:
Described current source is accessed the colelctor electrode of described first audion, base stage and one end of described first resistance；
Other end ground connection by described first resistance；
Being exported by the electric current of the emitter stage of described first audion, the benchmark as described current biasing circuit exports electric current.
The method utilizing current biasing circuit to improve positive temperature coefficient the most according to claim 9, it is characterised in that institute
Stating the first audion is NPN type triode.
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| CN111611534A (en) * | 2019-02-26 | 2020-09-01 | 北京知存科技有限公司 | Dynamic bias analog vector-matrix multiplication circuit and operation control method thereof |
| TWI827090B (en) * | 2022-06-08 | 2023-12-21 | 新唐科技股份有限公司 | Driving circuit and circuit system thereof |
| CN117650483A (en) * | 2024-01-30 | 2024-03-05 | 苏州锴威特半导体股份有限公司 | Over-temperature detection circuit of high-side switch and switching power supply |
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| CN111611534A (en) * | 2019-02-26 | 2020-09-01 | 北京知存科技有限公司 | Dynamic bias analog vector-matrix multiplication circuit and operation control method thereof |
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| CN117650483A (en) * | 2024-01-30 | 2024-03-05 | 苏州锴威特半导体股份有限公司 | Over-temperature detection circuit of high-side switch and switching power supply |
| CN117650483B (en) * | 2024-01-30 | 2024-04-16 | 苏州锴威特半导体股份有限公司 | Over-temperature detection circuit of high-side switch and switching power supply |
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