CN109802640A - A kind of radio-frequency power amplifier - Google Patents
A kind of radio-frequency power amplifier Download PDFInfo
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- CN109802640A CN109802640A CN201711136384.XA CN201711136384A CN109802640A CN 109802640 A CN109802640 A CN 109802640A CN 201711136384 A CN201711136384 A CN 201711136384A CN 109802640 A CN109802640 A CN 109802640A
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Abstract
The application proposes a kind of radio-frequency power amplifier, comprising: sequentially connected input matching circuit, first order cascode, intervalve matching circuit, the second stage power amplifier and output matching circuit；The input matching circuit will be matched to the input impedance of the first order cascode from the output impedance of transceiver, the first order cascode carries out power amplification to the radio-frequency power of output, the output impedance of the first order cascode is matched to the input impedance of second stage power amplifier by the intervalve matching circuit, second stage power amplifier carries out power amplification to the radio-frequency power of the output of the first order cascode, the output impedance of second stage power amplifier is matched to antenna end by the output matching circuit.
Description
Technical field
The present invention relates to communication transmission technology fields and chip design field, and in particular to a kind of radio-frequency power amplifier.
Background technique
Currently, with the development of radio frequency system, various wireless communication terminals are widely applied.These channel radios
Letter terminal all improves the power level of radiofrequency signal with radio-frequency power amplifier, is then sent out by day bundle of lines radiofrequency signal
It goes.With the arrival of 4G+ and 5G communication system, requirement of the wireless communication system to radio-frequency power amplifier is more improved.In addition,
The volume of wireless communication terminal is also smaller and smaller, and integrated level is higher and higher, and the demand of multimode multi-frequency is realized in one single chip
It is just more urgent, under conditions of this will minimize and is inexpensive, new demand is proposed to the gain of radio-frequency power amplifier.
The signal bandwidth of RF system is more and more wider at present, and the frequency range used is higher and higher, from 0.9GHz, 1.9GHz
To 2.5GHz, and 3.5GHz to following Sub6GHz.Requirement to radio frequency PA (PowerAmplifier, power amplifier)
It is higher and higher.By taking the 4G cell phone PA product of current main-stream as an example, in the past in 0.9GHz frequency range, two-stage is needed to amplify, gain is just full
Sufficient demand.When to 2.5GHz, especially apply at LTE (Long Term Evolution, long term evolution) field, two-stage is put
Big framework, gain are obviously inadequate.At this time, the scheme for solving this problem is largely to be amplified with three-level, or use high β
GaAs (GaAs) technique of value is understood PAD (pad in PCB (printed circuit board)) in this way and is increased, and area increases or wafer
(wafer) price increase and lead to increased costs.
Summary of the invention
The present invention provides a kind of radio-frequency power amplifier, increases the not increased feelings of cost in radio frequency communication system frequency
Under condition, PA product gain meet demand.
In order to achieve the above-mentioned object of the invention, the technical solution adopted by the present invention is as follows:
A kind of radio-frequency power amplifier, comprising:
Sequentially connected input matching circuit, first order cascode, intervalve matching circuit, second level power are put
Big device and output matching circuit；
The input matching circuit will be matched to the first order cascode from the output impedance of transceiver
Input impedance, the first order cascode carry out power amplification, the interstage matched electricity to the radio-frequency power of output
The output impedance of the first order cascode is matched to the input impedance of second stage power amplifier, institute by road
The radio-frequency power for stating output of second stage power amplifier to the first order cascode carries out power amplification, described
The output impedance of second stage power amplifier is matched to antenna end by output matching circuit.
Preferably, the first order cascode includes: the first transistor, the first biasing circuit, the second crystal
Pipe, the second biasing circuit and the first choke.
The base stage of the first transistor connects the input matching circuit and first biasing circuit, and described first is brilliant
The emitter of body pipe is grounded, and the collector of the first transistor connects the emitter of the second transistor, and described second is brilliant
Body pipe base stage connects second biasing circuit, and the collector of the second transistor connects first choke and the grade
Between match circuit.
Preferably, the first order cascode further includes inductance, and the emitter of the first transistor passes through
The inductance ground connection.
Preferably, first choke includes the first inductance.
Preferably, first choke is connect by resistance with the collector of the second transistor.
Preferably, second stage power amplifier includes: third transistor, third biasing circuit and the second choke.
The base stage of the third transistor connects the intervalve matching circuit and the third biasing circuit, and described first is brilliant
The emitter of body pipe is grounded, and the collector of the first transistor connects second choke and the output matching circuit.
Preferably, second choke includes the second inductance.
Preferably, the input matching circuit is T-type lattice network, and the T-type lattice network includes first capacitor, second
Capacitor and third inductance, the first capacitor and the second capacitor be connected on transceiver and the first order cascode it
Between, third inductance one end is connected between first capacitor and the second capacitor, other end ground connection.
Preferably, the intervalve matching circuit is T-type lattice network, and the T-type lattice network includes third capacitor, the 4th
Capacitor and the 4th inductance, the third capacitor and the 4th capacitor are connected on the first order cascode and described second
Between stage power amplifier, described 4th inductance one end is connected between third capacitor and the 4th capacitor, other end ground connection.
Preferably, the output matching circuit includes: the 5th inductance, the 6th inductance, the 7th inductance, the 5th capacitor, the 6th
Capacitor and the 7th capacitor, the 5th inductance and the 5th capacitor be connected on second stage power amplifier and antenna end it
Between, described 6th inductance one end is connected between the 5th capacitor and the antenna end, other end ground connection, the 6th capacitor
It connects with after the parallel connection of the 7th capacitor with the 7th inductance, series circuit one end is connected to the 5th inductance and the 5th capacitor connects
Connect place, other end ground connection.
Preferably, first biasing circuit, the second biasing circuit and third biasing circuit include: three pole of the first biasing
Pipe, the second biasing triode, third biasing triode, ground capacity and conducting inductance, the transmitting of the first biasing triode
Pole ground connection, the emitter phase that the base stage and collector of the first biasing triode bias triode with described second after connecting
Even, it is connected after the base stage and collector connection of the second biasing triode with one end of the conducting inductance, the electric conduction
Another termination bias voltage of sense, the base stage and current collection of the base stage of the third biasing triode and the second biasing triode
Extremely it is connected, the collector of third biasing triode connects supply voltage, the emitter connection of the third biasing triode the
The base stage of one transistor, second transistor or third transistor, described ground capacity one end are connected to third biasing triode
Between base stage and the base stage and collector of the second biasing triode, other end ground connection.
Compared to the prior art the present invention, has the following beneficial effects:
Technical solution of the present invention, structure is simple and the circuit of effective radio-frequency power amplifier, the radio frequency function
Rate amplifier has many advantages, such as that at low cost, size is good, economical, just real using two-stage amplification in the case where realizing high-frequency operation
The function of existing high-gain.
Detailed description of the invention
Fig. 1 is the schematic diagram of the radio-frequency power amplifier of the embodiment of the present invention；
Fig. 2 is the circuit diagram that amplifier gain promotes circuit in embodiment 1；
Fig. 3 is the circuit diagram that amplifier gain promotes circuit in embodiment 1；
Fig. 4 is the circuit diagram of the biasing circuit of embodiment 1；
Fig. 5 is the circuit diagram that amplifier gain promotes circuit in embodiment 2；
Fig. 6 is the circuit diagram that amplifier gain promotes circuit in embodiment 2；
Fig. 7 is the circuit diagram of the biasing circuit of embodiment 2.
Specific embodiment
To keep goal of the invention of the invention, technical scheme and beneficial effects more clear, with reference to the accompanying drawing to this
The embodiment of invention is illustrated, it should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature can mutual any combination.
As shown in Figure 1, the embodiment of the present invention provides a kind of radio-frequency power amplifier, comprising:
Sequentially connected input matching circuit 101, first order cascode 102, intervalve matching circuit 103,
Two-stage power amplifier 104 and output matching circuit 105；
The input matching circuit 101 will be matched to the first order cascode from the output impedance of transceiver
The radio-frequency power of 102 input impedance, 102 pairs of first order cascode output carries out power amplification, the grade
Between match circuit 103 output impedance of the first order cascode 102 is matched to the second level power amplification
The input impedance of device 104, second stage power amplifier 104 is to the output of the first order cascode 102
Radio-frequency power carries out power amplification, and the output matching circuit 105 is by the output impedance of second stage power amplifier 104
It is fitted on antenna end.
Input matching circuit 101 is responsible for for the output impedance (50 ohm) of transceiver being matched to the amplification of first order cascode
The input impedance of device 102.
Intervalve matching circuit 103, for matching the output impedance of cascode 102 to the second stage power amplifier
104 input impedance, suitable intervalve matching circuit can effectively increase bandwidth and improve the linearity.
Second stage power amplifier 104, for amplifying the radio-frequency power exported from first order cascode 102,
Thus grade generates the high current of the radio-frequency power amplifier of the embodiment of the present invention.
Output matching circuit 105, for matching the output impedance of the second stage power amplifier 104 to the impedance of antenna end
(50 ohm).Suitable output matching circuit can effectively increase efficiency, bandwidth and the linearity.
Wherein, the first order cascode 102 includes: the first transistor T1, the first biasing circuit IB1,
Two-transistor T2, the second biasing circuit IB2 and the first choke choke1.
The base stage of the first transistor T1 connects the input matching circuit IM and the first biasing circuit IB1, institute
The emitter ground connection of the first transistor T1 is stated, the collector of the first transistor T1 connects the transmitting of the second transistor T2
Pole, the second transistor T2 base stage connect the second biasing circuit IB2, and the collector of the second transistor T2 connects institute
State the first choke choke1 and the intervalve matching circuit 103.
First order amplifying unit 102 is the core of the embodiment of the present invention, has used cascode
(cascode) framework can make the gain of first order cascode from Av=gm1ro1Rise to Av=gm1ro1
[(gm2+gmb2)ro2+ 1], wherein (gm2+gmb2)ro2>=1, (assuming that the impedance of the first choke choke1 inductance is infinitely great, through
The input impedance of the second stage power amplifier after matching is much larger than ro1).Wherein, Av: gain, gmFor mutual conductance, gmbFor with bulk effect
Relevant mutual conductance, ro are the output impedance of transistor, subscript 1 indicate be the first transistor T1 parameter, subscript 2 indicates the
The parameter of two-transistor T2.
The first order cascode 102 further includes inductance, and the emitter of the first transistor T1 passes through institute
State inductance ground connection.
The first choke choke1 includes the first inductance L1.
The first choke choke1 is connect by resistance with the collector of the second transistor T2.
Second stage power amplifier 104 includes: third transistor T3, third biasing circuit IB3 and the second choke
choke2。
The base stage of the third transistor T3 connects the intervalve matching circuit 104 and the third biasing circuit IB3, institute
State the emitter ground connection of the first transistor T1, the collector of the first transistor T1 connect the second choke choke2 and
The output matching circuit 105.
The second choke choke2 includes the second inductance L2.
The input matching circuit 101 is T-type lattice network, and the T-type lattice network includes first capacitor C1, the second electricity
Hold C2 and third inductance L3, the first capacitor C1 and the second capacitor C2 are connected on transceiver and the first order cascode is put
Between big device 102, described one end third inductance L3 is connected between first capacitor C1 and the second capacitor C2, other end ground connection.
The intervalve matching circuit 103 is T-type lattice network, and the T-type lattice network includes third capacitor C3, the 4th electricity
Hold C4 and the 4th inductance L4, the third capacitor C3 and the 4th capacitor C4 are connected on the first order cascode 102
Between second stage power amplifier 104, the one end the 4th inductance L4 is connected to third capacitor C3 and the 4th capacitor C4
Between, other end ground connection.
The output matching circuit 105 include: the 5th inductance L5, the 6th inductance L6, the 7th inductance L7, the 5th capacitor C5,
6th capacitor C6 and the 7th capacitor C7, the 5th inductance L5 and the 5th capacitor C5 are connected on the second level power amplification
Between device 104 and antenna end, the one end the 6th inductance L6 is connected between the 5th capacitor C5 and the antenna end, another
It connects after end ground connection, the 6th capacitor C6 and the 7th capacitor C7 parallel connection with the 7th inductance L7, series circuit one end is connected to institute
State the 5th inductance L5 and the junction the 5th capacitor C5, other end ground connection.
The first biasing circuit IB1, the second biasing circuit IB2 and third biasing circuit IB3 include: three pole of the first biasing
Pipe, the second biasing triode, third biasing triode, ground capacity and conducting inductance, the transmitting of the first biasing triode
Pole ground connection, the emitter phase that the base stage and collector of the first biasing triode bias triode with described second after connecting
Even, it is connected after the base stage and collector connection of the second biasing triode with one end of the conducting inductance, the electric conduction
Another termination bias voltage of sense, the base stage and current collection of the base stage of the third biasing triode and the second biasing triode
Extremely it is connected, the collector of third biasing triode connects supply voltage, the emitter connection of the third biasing triode the
The base stage of one transistor, second transistor or third transistor, described ground capacity one end are connected to third biasing triode
Between base stage and the base stage and collector of the second biasing triode, other end ground connection.
Embodiment 1
As shown in Fig. 2, the principle that the radio-frequency power amplifier gain of the present embodiment is promoted.It include: input matching circuit
201, first order amplifying unit 202, intervalve matching circuit 203, second level power amplification unit 204 and output matching circuit 205.
Input matching circuit 201 is responsible for being matched to the input stage of the first order from 50 ohm of output impedance of transceiver, uses T-type
Network is realized, can also realize that radio frequency inputs blocking.
First order amplifying unit 202 is core of the invention part, has used the framework of cascode, can make first
The gain of grade amplifying unit is from Av=gm1ro1Rise to Av=gm1ro1[(gm2+gmb2)ro2+ 1] (assuming that the impedance of choke inductance without
It is poor big, it is matched after the input impedance of second level amplifier be much larger than ro1), while adding a resistance in output end, reduce
The Q value of choke inductance absorbs energy, in order to avoid cause concussion because gain is excessively high.As shown in Figure 3, it is also possible to the first order plus one
A RC feedback loop for improving input impedance, and reduces gain, prevents from shaking.
Intervalve matching circuit 203, for matching the output impedance of the first order to the input impedance of the second level, between suitable grade
Matching can effectively increase bandwidth and improve the linearity.
Second level power amplification unit 204 is for amplifying the radio-frequency power exported from the first order, and general radio-frequency power is put
Thus grade generates the high current of big device.
Output matching circuit 205, for matching the output impedance of the second level to 50 ohm of antenna end.Suitable output
With circuit, it can effectively increase efficiency, bandwidth and the linearity.
Biasing circuit IB1, IB2, IB3 can generally realize that biasing circuit 206 is in reality with the biasing circuit 206 of Fig. 4
While existing desired offset, moreover it is possible to which temperature-compensating is provided.
Embodiment 2
Shown in Fig. 5, the principle of the radio-frequency power amplifier gain promotion of the present embodiment.It include: input matching circuit
301, first order amplifying unit 302, intervalve matching circuit 303, second level power amplification unit 304 and output matching circuit 305.
Input matching circuit 301 is responsible for being matched to the input stage of the first order from 50 ohm of output impedance of transceiver, uses T-type
Network is realized, can also realize that radio frequency inputs blocking.
First order amplifying unit 302 is core of the invention part, has used the framework of cascode, can make first
The gain of grade amplifying unit is from Av=gm1ro1Rise to Av=gm1ro1[(gm2+gmb2)ro2+ 1] (assuming that the impedance of choke inductance without
It is poor big, it is matched after the input impedance of second level amplifier be much larger than ro1), while adding a resistance in output end, reduce
The Q value of choke inductance absorbs energy, in order to avoid cause concussion because gain is excessively high.Add an inductance in the source level of transistor,
Major function is to promote the linearity by adjusting gain and adjust input impedance, while not influencing on the noise of PA.Such as Fig. 7
It is shown, it is also possible to the first order plus a RC feedback loop, for improving input impedance, and to reduce gain, prevent from shaking.
Intervalve matching circuit 303, for matching the output impedance of the first order to the input impedance of the second level, between suitable grade
Matching can effectively increase bandwidth and improve the linearity.
Second level power amplification unit 304 is for amplifying the radio-frequency power exported from the first order, and general radio-frequency power is put
Thus grade generates the high current of big device.
Output matching circuit 305, for matching the output impedance of the second level to 50 ohm of antenna end.Suitable output
With circuit, it can effectively increase efficiency, bandwidth and the linearity.
Biasing circuit IB1, IB2, IB3 can generally realize with the biasing circuit 306 of Fig. 7, in biasing circuit 306
While realizing desired offset, moreover it is possible to which temperature-compensating is provided.
Although disclosed embodiment is as above, its content is only to facilitate understand technical side of the invention
Case and the embodiment used, are not intended to limit the present invention.Any those skilled in the art to which this invention pertains, not
Under the premise of being detached from disclosed core technology scheme, any modification and change can be made in form and details in implementation
Change, but protection scope defined by the present invention, the range that the appended claims that must still be subject to limits.
Claims (11)
1. a kind of radio-frequency power amplifier characterized by comprising
Sequentially connected input matching circuit, first order cascode, intervalve matching circuit, the second stage power amplifier
And output matching circuit；
The input matching circuit will be matched to the input of the first order cascode from the output impedance of transceiver
Impedance, the first order cascode carry out power amplification to the radio-frequency power of output, and the intervalve matching circuit will
The output impedance of the first order cascode is matched to the input impedance of second stage power amplifier, and described
Two-stage power amplifier carries out power amplification, the output to the radio-frequency power of the output of the first order cascode
The output impedance of second stage power amplifier is matched to antenna end by match circuit.
2. amplifier as described in claim 1, it is characterised in that: the first order cascode includes: the first crystalline substance
Body pipe, the first biasing circuit, second transistor, the second biasing circuit and the first choke；
The base stage of the first transistor connects the input matching circuit and first biasing circuit, the first transistor
Emitter ground connection, the collector of the first transistor connects the emitter of the second transistor, the second transistor
Base stage connects second biasing circuit, and the collector of the second transistor connects between first choke and the grade
With circuit.
3. amplifier as claimed in claim 2, it is characterised in that: the first order cascode further includes inductance,
The emitter of the first transistor is grounded by the inductance.
4. amplifier as claimed in claim 2, it is characterised in that: first choke includes the first inductance.
5. amplifier as claimed in claim 4, it is characterised in that: first choke passes through resistance and second crystal
The collector of pipe connects.
6. amplifier as described in claim 1, it is characterised in that: second stage power amplifier include: third transistor,
Third biasing circuit and the second choke；
The base stage of the third transistor connects the intervalve matching circuit and the third biasing circuit, the first transistor
Emitter ground connection, the collector of the first transistor connects second choke and the output matching circuit.
7. amplifier as claimed in claim 6, it is characterised in that: second choke includes the second inductance.
8. amplifier as described in claim 1, it is characterised in that: the input matching circuit is T-type lattice network, the T
Type lattice network includes first capacitor, the second capacitor and third inductance, and the first capacitor and the second capacitor are connected on transceiver
Between the first order cascode, third inductance one end is connected between first capacitor and the second capacitor,
Other end ground connection.
9. amplifier as described in claim 1, it is characterised in that: the intervalve matching circuit is T-type lattice network, the T
Type lattice network includes third capacitor, the 4th capacitor and the 4th inductance, and the third capacitor and the 4th capacitor are connected on described
Between level-one cascode and second stage power amplifier, described 4th inductance one end be connected to third capacitor and
Between 4th capacitor, other end ground connection.
10. amplifier as described in claim 1, it is characterised in that: the output matching circuit includes: the 5th inductance, the 6th
Inductance, the 7th inductance, the 5th capacitor, the 6th capacitor and the 7th capacitor, the 5th inductance and the 5th capacitor are connected on institute
It states between the second stage power amplifier and antenna end, described 6th inductance one end is connected to the 5th capacitor and the antenna end
Between, other end ground connection is connected after the 6th capacitor and the parallel connection of the 7th capacitor with the 7th inductance, and series circuit one end is connected to
At 5th inductance and the 5th capacitance connection, other end ground connection.
11. the amplifier as described in claim 2 or 6, it is characterised in that: first biasing circuit, the second biasing circuit and
Third biasing circuit includes: the first biasing triode, the second biasing triode, third biasing triode, ground capacity and conducting
Inductance, it is described first biasing triode emitter ground connection, it is described first biasing triode base stage and collector connection after with
The emitter of the second biasing triode is connected, and leads after the base stage and collector connection of the second biasing triode with described
Being powered, the one end felt is connected, and another termination bias voltage of the conducting inductance, the third biases base stage and the institute of triode
The base stage for stating the second biasing triode is connected with collector, and the collector of the third biasing triode connects supply voltage, described
The emitter that third biases triode connects the base stage of the first transistor, second transistor or third transistor, the ground connection electricity
Hold one end to be connected between the base stage of third biasing triode and the base stage and collector of the second biasing triode, the other end
Ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711136384.XA CN109802640A (en) | 2017-11-16 | 2017-11-16 | A kind of radio-frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711136384.XA CN109802640A (en) | 2017-11-16 | 2017-11-16 | A kind of radio-frequency power amplifier |
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| Publication Number | Publication Date |
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| CN109802640A true CN109802640A (en) | 2019-05-24 |
Family
ID=66555374
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711136384.XA Withdrawn CN109802640A (en) | 2017-11-16 | 2017-11-16 | A kind of radio-frequency power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113242024A (en) * | 2021-05-18 | 2021-08-10 | 深圳市时代速信科技有限公司 | Radio frequency power amplifier |
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| CN204304932U (en) * | 2014-12-26 | 2015-04-29 | 广州润芯信息技术有限公司 | Radio-frequency power amplifier output matching circuit |
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| US20060202751A1 (en) * | 2005-02-23 | 2006-09-14 | Carl Stephelbauer | Controllable amplifier and method for amplifying a signal |
| JP2006279599A (en) * | 2005-03-29 | 2006-10-12 | Toyota Industries Corp | Amplifying circuit |
| US20120032742A1 (en) * | 2010-08-06 | 2012-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cmos millimeter-wave variable-gain low-noise amplifier |
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Application publication date: 20190524 |