CN101841306B - A kind of power amplifier - Google Patents
A kind of power amplifier Download PDFInfo
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- CN101841306B CN101841306B CN201010187382.5A CN201010187382A CN101841306B CN 101841306 B CN101841306 B CN 101841306B CN 201010187382 A CN201010187382 A CN 201010187382A CN 101841306 B CN101841306 B CN 101841306B
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Abstract
The invention provides a kind of power amplifier, comprising: common emitter amplifying stage module; Emitter following module, described emitter following module at least comprises a transistor, and the output of described common emitter amplifying stage module is connected with the base stage of described transistor; Power-amplifier stage module, be connected with described emitter following module, power amplifier provided by the invention is applied to WLAN (wireless local area network), has the advantage such as fully integrated on high, the low in energy consumption and sheet of the linearity.
Description
Technical field
The invention belongs to integrated circuit (IC) design and signal transacting field, and in particular to a kind of power amplifier.
Background technology
Radio frequency and microwave and millimeter wave power amplifier (PowerAmplifier, PA) are the important component parts of radio frequency integrated system and radiofrequency launcher, are widely used in wireless communication field, comprise GSM/CDMA/Bluetooth/ WLAN (wireless local area network) WLAN etc.
WLAN (WirelessLocalAreaNetworks, WLAN) be data transmission system quite easily, it utilizes radio frequency (RadioFrequency, RF) technology, replace the LAN that old-fashioned copper twisted pairs (Coaxial) of getting in the way is formed, make WLAN that simple access architecture can be utilized to allow user through it, reach the object of obtaining information whenever and wherever possible, its system block diagram as shown in Figure 1, comprise low noise amplifier, power amplifier, be connected with respective bandpass filtering respectively, low-converter and upconverter are all connected to a frequency domain synthesis module, baseband processing unit and media access control system and low-converter, upconverter is all connected, in addition, this WLAN also comprises the equipment such as antenna and switch.
At present, utilize CMOS technology integrated single chip radio frequency transceiver to have a lot of successful case, but before radio frequency transceiver on dististyle integrated high performance power amplifier remain a huge challenge.Because power amplifier has high-output power, occupy the overwhelming majority of power consumption in the entire system, and power amplifier all has very high requirement to operating frequency, bandwidth, load, power output, power efficiency, the linearity and cost.Compromise each other between these parameters, make design power amplifier have very large difficulty, the Designing power amplifier based on different agreement and modulation system also has different project organization considerations.
Power amplifier based on wireless local area network (WLAN) system is essentially a kind of circuit DC power being transformed into RF and microwave output power, in most cases, power amplifier is not only all a small signal amplifier being urged to saturation region, but large signal operation condition circuit, there is high nonlinear characteristic, need Non-linear analysis technology targetedly and design.And from the developing history of wireless LAN power amplifier, the main technology adopted comprises GaAs (GaAs), phosphorus potassium indium InGaP, and the RFCMOS technology of main flow the most.But the above two cause cannot obtaining higher cost performance and performance boost further due to process costs reason, the latter causes performance can not meet the requirement of power amplification completely due to technique bottleneck.
Summary of the invention
In order to overcome the problem that prior art intermediate power amplifier cost performance is lower, performance boost is slower, the invention provides a kind of cost performance and performance is all higher, and the power amplifier easily realized.
To achieve these goals, the present invention proposes a kind of power amplifier, is applied to WLAN (wireless local area network), comprises: common emitter amplifying stage module; Emitter following module, described emitter following module at least comprises a transistor, and the base stage of described transistor is connected with the output of described common emitter amplifying stage module; Power-amplifier stage module, is connected with described emitter following module.
Optionally, described common emitter amplifying stage module at least comprises: the first SiGe heterojunction bipolar transistor, the second SiGe heterojunction bipolar transistor and the first offset side.
Optionally, described first offset side connects the collector electrode of described first SiGe heterojunction bipolar transistor, the base stage of described first SiGe heterojunction bipolar transistor is connected with the base stage of described second SiGe heterojunction bipolar transistor, the emitter of described first SiGe heterojunction bipolar transistor and the equal ground connection of emitter of described second SiGe heterojunction bipolar transistor.
Optionally, described common emitter amplifying stage module also comprises the 3rd SiGe heterojunction bipolar transistor, after the emitter of described 3rd SiGe heterojunction bipolar transistor connects an inductance, is connected with the collector electrode of described second SiGe heterojunction bipolar transistor.
Optionally, described emitter following module at least comprises: the 4th SiGe heterojunction bipolar transistor, the 5th SiGe heterojunction bipolar transistor, the 6th SiGe heterojunction bipolar transistor, the 7th SiGe heterojunction bipolar transistor, the 8th SiGe heterojunction bipolar transistor, the second offset side, the 3rd offset side and the 4th offset side.
Optionally, the base stage of described 4th SiGe heterojunction bipolar transistor is connected with the base stage of described 5th SiGe heterojunction bipolar transistor, the base stage of described 6th SiGe heterojunction bipolar transistor is connected with the base stage of described 8th SiGe heterojunction bipolar transistor, after the emitter of described 7th SiGe heterojunction bipolar transistor connects an inductance, be connected with the collector electrode of described 5th SiGe heterojunction bipolar transistor, described second offset side is connected with the collector electrode of described 4th SiGe heterojunction bipolar transistor, the base stage of described 3rd offset side and described 7th SiGe heterojunction bipolar transistor, the collector electrode of described 6th SiGe heterojunction bipolar transistor is connected respectively, the base stage of described 4th bigoted end and described 8th SiGe heterojunction bipolar transistor, collector electrode is all connected, described 4th, 5th, 6th, the equal ground connection of emitter of the 8th SiGe heterojunction bipolar transistor.
Optionally, described power-amplifier stage module at least comprises: the 9th SiGe heterojunction bipolar transistor, the emitter of described 9th SiGe heterojunction bipolar transistor connects ground connection after an inductance, collector electrode is connected to one end of a pair electric capacity parallel with one another, inductance, and base stage is connected with the base stage of described 7th SiGe heterojunction bipolar transistor.
Owing to have employed technique scheme, compared with prior art, a kind of power amplifier of the present invention has the following advantages: the transistor in amplifier provided by the invention all adopts SiGe heterojunction bipolar transistor, compared with CMOS technology technology, the present invention adopts three grades (to be respectively voltage, electric current and voltage) structure of amplifying, decrease matching element, there is higher characteristic frequency, the large-signal performance of bipolar device can be substantially improved, improve device electric breakdown strength, the present invention is applied to WLAN (wireless local area network), there is the linearity high, the advantage such as fully integrated on low in energy consumption and sheet.
Accompanying drawing explanation
Fig. 1 is WLAN system block diagram in prior art.
Fig. 2 is the structural representation of a kind of power amplifier of the present invention.
Fig. 3 is three grades of characteristics of output power curve charts of a kind of power amplifier of the present invention.
Embodiment
Below, the present invention is described further by reference to the accompanying drawings.
First, please refer to Fig. 2, Fig. 2 is the structural representation of a kind of power amplifier of the present invention, upper as can be seen from figure, and a kind of power amplifier of the present invention is applied to WLAN (wireless local area network), comprising: common emitter amplifying stage module 31; Emitter following module 32, described emitter following module at least comprises a transistor, and the base stage of described transistor is connected with the output of described common emitter amplifying stage module 31; Power-amplifier stage module 33, is connected with described emitter following module.
Described common emitter amplifying stage module 31 at least comprises: the first SiGe heterojunction bipolar transistor T1, the second SiGe heterojunction bipolar transistor T2 and the first offset side BIAS1.Described first offset side BIAS1 connects the collector electrode of described first SiGe heterojunction bipolar transistor T1, the base stage of described first SiGe heterojunction bipolar transistor T1 is connected with the base stage of described second SiGe heterojunction bipolar transistor T2, the emitter of described first SiGe heterojunction bipolar transistor T1 and the equal ground connection of emitter of described second SiGe heterojunction bipolar transistor T2.Described common emitter amplifying stage module 31 also comprises the 3rd SiGe heterojunction bipolar transistor T3, after the emitter of described 3rd SiGe heterojunction bipolar transistor T3 connects an inductance L 2, be connected with the collector electrode of described second SiGe heterojunction bipolar transistor T2, the 3rd SiGe heterojunction bipolar transistor T3 is connected to one end of a pair electric capacity C1 parallel with one another, inductance L 1.BIAS1 termination 3.5V voltage, manage with T1 and T2 pipe formed current mirror provide the first order be biased, L2 is emitter degeneration inductance, improves input linear degree.Input rf signal enters T3 pipe by input matching network, is input to subordinate by Linear Amplifer and electric capacity C2 filtering.
Described emitter following module 32 at least comprises: the 4th SiGe heterojunction bipolar transistor T4, the 5th SiGe heterojunction bipolar transistor T5, the 6th SiGe heterojunction bipolar transistor T6, the 7th SiGe heterojunction bipolar transistor T7, the 8th SiGe heterojunction bipolar transistor T8, the second offset side BIAS2, the 3rd offset side BIAS3 and the 4th offset side BIAS4.The base stage of described 4th SiGe heterojunction bipolar transistor T4 is connected with the base stage of described 5th SiGe heterojunction bipolar transistor T5, the base stage of described 6th SiGe heterojunction bipolar transistor T6 is connected with the base stage of described 8th SiGe heterojunction bipolar transistor T8, after the emitter of described 7th SiGe heterojunction bipolar transistor T7 connects an inductance, be connected with the collector electrode of described 5th SiGe heterojunction bipolar transistor T5, described second offset side BIAS2 is connected with the collector electrode of described 4th SiGe heterojunction bipolar transistor T4, the base stage of described 3rd offset side BIAS3 and described 7th SiGe heterojunction bipolar transistor T7, the collector electrode of described 6th SiGe heterojunction bipolar transistor T6 is connected respectively, the base stage of described 4th bigoted end BIAS4 and described 8th SiGe heterojunction bipolar transistor T8, collector electrode is all connected, described 4th, 5th, 6th, the equal ground connection of emitter of the 8th SiGe heterojunction bipolar transistor.3rd offset side BIAS3 is all connected load resistance R1 and R2 with the link of the 4th offset side BIAS4, emitter following module 32 also comprises an inductance L 3, is connected between the 7th SiGe heterojunction bipolar transistor T7 and the 5th SiGe heterojunction bipolar transistor T5.BIAS2 termination 5V voltage, manage with T4 and T5 pipe form current mirror provide the second level be biased, BIAS3 termination 1.65V voltage, BIAS4 termination 12V voltage, manage with T6, T8 pipe and resistance R1 form mirror current source, for T7 pipe provides the current offset of stable temperature coefficient, T7 pipe and inductance L 3 are emitter follower circuit, L3 is formed power pre-amplification and exports.Emitter following module shown in emitter following module 32 adopts emitter follower to export, voltage gain is 1 substantially, this structure makes common emitter amplifying stage module 31 export the base stage directly importing transistor dexterously, avoid large scale and the interstage matched easily consumed, Bias3 and resistance R1 is utilized to provide base bias current, and adopt the mode of transistor T4 and T5 mirror image big current to improve the collector electrode output current of relative base bias, increase current amplification factor.And this current differential is directly as the base bias current of power-amplifier stage module 33 grades of power-amplifier stages.
Described power-amplifier stage module 33 at least comprises: the 9th SiGe heterojunction bipolar transistor T9, the emitter of described 9th SiGe heterojunction bipolar transistor T9 connects the rear ground connection of an inductance L 5, collector electrode is connected to one end of a pair electric capacity C3 parallel with one another, inductance L 4, base stage is connected with the base stage of described 7th SiGe heterojunction bipolar transistor T7, between the 7th SiGe heterojunction bipolar transistor T7 and the 9th SiGe heterojunction bipolar transistor T9, be also provided with a resistance R3 mutually connected and electric capacity C4.T9 pipe and inductance L 5 are core power amplifying stages of band emitter degeneration, R3 and C4 composition exports negative feedback to reduce output resistance, and inductance L 4 and C3 form resonant network, complete power transfer at 2.4GHz place.
Finally, please refer to Fig. 3, Fig. 3 is the characteristics of output power curve chart of a kind of power amplifier of the present invention, and in figure, abscissa is input power, and unit is dBm, and ordinate is power output, and unit is also dBm, and transverse axis and the longitudinal axis are logarithmic coordinates.Due to nonlinear existence, harmonic content can cause the output of power amplifier to be the compression or saturation function that input.In Fig. 3, L0 is the linear output characteristic not considering harmonic distortion amount in the present invention, and L1 is true curve of output.According to WLAN (wireless local area network) WLAN802.11b protocol requirement, linear power output must be greater than 15dBm, and in order to meet this requirement, conventional method adopts " back-off " (powerbackoff), namely input power often reduces 1dB, third order intermodulation amount decline 2dB.Corresponding input power and power output point when A point is power gain decline 1dB, visible, in figure, the power output 1dB compression point of A point representative reaches 21dBm, provide the back-off surplus of 6dB, also be the third order intermodulation rollback surplus of 12dB, fully meet the performance requirement of WLAN (wireless local area network) WLAN802.11b.
The course of work of germanium and silicon heterogeneous junction transistors is based on the principle of complicated semiconductor GaAs, and its basic thought is, it is very thin to reduce base resistance that emitter can be done, and heavy doping is introduced in base, and operating frequency also can correspondingly be greatly improved.The SiGe BiCMOS technology that SiGe makes base can provide very high operating frequency, and significantly reduce base resistance simultaneously, and the large-signal performance had close to GaAs performance advantage, with the same technique platform characteristic of RFCMOS, the cost of this technology is declined to a great extent simultaneously, be adapted to very much the design of extensive power device.
Compared with wireless LAN power amplifier before, the invention has the advantages that: existing to adopt the SiGe power amplifier being applied to WLAN (wireless local area network) of 0.18 μm of SiGe BiCMOS technique design that it is described.
1, the linearity is high
The SiGe power amplifier being applied to WLAN (wireless local area network) of the present invention is finally applied in wireless local area network (WLAN) system 802.11b/g pattern, adopt CCK modulation (CCK) and OFDM modulation (OFDM) pattern respectively, even if Switch power amplifier (as E class and F class A amplifier A) can provide higher power efficiency, but the linearity of modulating mode cannot be met, therefore three grades of AB power-like amplifier structures of the present invention can provide the high linear prower amplifier meeting WLAN (wireless local area network) application.
2, low in energy consumption
The following index characterization of low power consumption characteristic being applied to the SiGe power amplifier of WLAN (wireless local area network) of the present invention: the supply power voltage being applied to the SiGe power amplifier of WLAN (wireless local area network) of the present invention is 3.3V, and the 5V lower than traditional cmos power amplifier powers and the 12V of GaAs device powers.
3, fully integrated on sheet
The SiGe power amplifier being applied to WLAN (wireless local area network) of the present invention adopts fully integrated design on sheet, comprises active device and passive impedance transformation network.In existing Designing power amplifier, fully integrated power amplification on the sheet that seldom can be implemented in 2.4GHz.Impedance transformer network fully integrated on sheet can reduce outside and mate the uncertain factor and associated parasitic amount brought.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Have in technical field of the present invention and usually know the knowledgeable, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (5)
1. a power amplifier, is applied to WLAN (wireless local area network), it is characterized in that, comprising:
Common emitter amplifying stage module, described common emitter amplifying stage module at least comprises: the first SiGe heterojunction bipolar transistor, the second SiGe heterojunction bipolar transistor and the first offset side, described first offset side connects the collector electrode of described first SiGe heterojunction bipolar transistor, the base stage of described first SiGe heterojunction bipolar transistor is connected with the base stage of described second SiGe heterojunction bipolar transistor, the emitter of described first SiGe heterojunction bipolar transistor and the equal ground connection of emitter of described second SiGe heterojunction bipolar transistor;
Emitter following module, described emitter following module at least comprises a transistor, and the base stage of described transistor is connected with the output of described common emitter amplifying stage module;
Power-amplifier stage module, is connected with described emitter following module.
2. power amplifier according to claim 1, it is characterized in that: described common emitter amplifying stage module also comprises the 3rd SiGe heterojunction bipolar transistor, after the emitter of described 3rd SiGe heterojunction bipolar transistor connects an inductance, be connected with the collector electrode of described second SiGe heterojunction bipolar transistor.
3. power amplifier according to claim 1, is characterized in that: described emitter following module comprises: the 4th SiGe heterojunction bipolar transistor, the 5th SiGe heterojunction bipolar transistor, the 6th SiGe heterojunction bipolar transistor, the 7th SiGe heterojunction bipolar transistor, the 8th SiGe heterojunction bipolar transistor, the second offset side, the 3rd offset side and the 4th offset side.
4. power amplifier according to claim 3, it is characterized in that: the base stage of described 4th SiGe heterojunction bipolar transistor is connected with the base stage of described 5th SiGe heterojunction bipolar transistor, the base stage of described 6th SiGe heterojunction bipolar transistor is connected with the base stage of described 8th SiGe heterojunction bipolar transistor, after the emitter of described 7th SiGe heterojunction bipolar transistor connects an inductance, be connected with the collector electrode of described 5th SiGe heterojunction bipolar transistor, described second offset side is connected with the collector electrode of described 4th SiGe heterojunction bipolar transistor, the base stage of described 3rd offset side and described 7th SiGe heterojunction bipolar transistor, the collector electrode of described 6th SiGe heterojunction bipolar transistor is connected respectively, the base stage of described 4th bigoted end and described 8th SiGe heterojunction bipolar transistor, collector electrode is all connected, described 4th, 5th, 6th, the equal ground connection of emitter of the 8th SiGe heterojunction bipolar transistor.
5. power amplifier according to claim 4, it is characterized in that: described power-amplifier stage module at least comprises: the 9th SiGe heterojunction bipolar transistor, the emitter of described 9th SiGe heterojunction bipolar transistor connects ground connection after an inductance, collector electrode is connected to one end of a pair electric capacity parallel with one another, inductance, and base stage is connected with the base stage of described 7th SiGe heterojunction bipolar transistor.
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| CN201010187382.5A CN101841306B (en) | 2010-05-28 | 2010-05-28 | A kind of power amplifier |
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| CN201010187382.5A CN101841306B (en) | 2010-05-28 | 2010-05-28 | A kind of power amplifier |
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| CN101841306A CN101841306A (en) | 2010-09-22 |
| CN101841306B true CN101841306B (en) | 2015-11-25 |
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| CN103457550B (en) * | 2012-05-30 | 2017-12-26 | 上海无线通信研究中心 | Radio-frequency power amplifier and its mobile terminal |
| CN103001593A (en) * | 2012-12-07 | 2013-03-27 | 邹小兰 | Power amplification circuit used for Bluetooth communication circuit |
| CN107450042B (en) * | 2017-09-21 | 2023-07-04 | 国家电网公司 | Current transformer detecting system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101022266A (en) * | 2006-09-28 | 2007-08-22 | 威盛电子股份有限公司 | Power amplifier |
| CN101027836A (en) * | 2002-07-03 | 2007-08-29 | 皇家菲利浦电子有限公司 | Improved linear power amplifier |
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2010
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101027836A (en) * | 2002-07-03 | 2007-08-29 | 皇家菲利浦电子有限公司 | Improved linear power amplifier |
| CN101022266A (en) * | 2006-09-28 | 2007-08-22 | 威盛电子股份有限公司 | Power amplifier |
Non-Patent Citations (1)
| Title |
|---|
| 5GHz无线局域网的锗硅异质结晶体管功率放大器;李文渊等;《电子器件》;20081220;第31卷(第6期);1761-1764 * |
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Inventor after: Wang Yong Inventor after: Hu Shaojian Inventor after: Ren Zheng Inventor after: Wang Bin Inventor after: Zhou Wei Inventor after: Wen Jianxin Inventor after: Chen Hong Inventor before: Wang Yong Inventor before: Hu Shaojian Inventor before: Ren Zheng Inventor before: Wang Bin Inventor before: Zhou Wei |
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Free format text: CORRECT: INVENTOR; FROM: WANG YONG HU SHAOJIAN REN ZHENG WANG BIN ZHOU WEI TO: WANG YONG HU SHAOJIAN REN ZHENG WANG BIN ZHOU WEI WEN JIANXIN CHEN HONG |
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