CN103095225A - Power amplification transistor circuit and method for improving stability of circuit - Google Patents
Power amplification transistor circuit and method for improving stability of circuit Download PDFInfo
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- CN103095225A CN103095225A CN2011103437524A CN201110343752A CN103095225A CN 103095225 A CN103095225 A CN 103095225A CN 2011103437524 A CN2011103437524 A CN 2011103437524A CN 201110343752 A CN201110343752 A CN 201110343752A CN 103095225 A CN103095225 A CN 103095225A
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Abstract
The invention belongs to the technical field of power amplifiers, and particularly discloses a power amplification transistor circuit and a method for improving stability of the circuit. The power amplification transistor circuit comprises a power amplification transistor (T1) and a stabilizing circuit (5) connected to a base electrode of the power amplification transistor, the stabilizing circuit (5) comprises a radio frequency input channel and a direct-current input channel which are connected in parallel, the radio frequency input channel is used for improving electric stability of the power amplification transistor (T1), and the direct-current input channel is used for improving heat stability of the power amplification transistor (T1). The power amplification transistor circuit simultaneously optimizes the heat stability and the electric stability of the power amplification transistor, and the power amplification transistor can be well designed.
Description
Technical field
The invention belongs to the power amplifier technical field, be specifically related to a kind of power amplifying transistor circuit and improve the method, particularly a kind of GaAs heterogenous dual-pole power amplifying transistor (GaAs HBT power amplifying transistor) circuit of power amplifying transistor stability and improve its stable method.
Background technology
In modern wireless communication systems, radio-frequency power amplifier is the critical component of realizing the radiofrequency signal wireless transmission, and power amplifying transistor is the core that consists of radio-frequency power amplifier.Its requires to have that high frequency characteristics is good, power density is large, operating frequency is high, the linearity is good, power gain is high, be easy to many characteristics such as coupling.And GaAs HBT power amplifying transistor has high current handling capability, high power output, and excellent high frequency characteristics, wider linear and high efficient are very suitable for power amplification and use.
GaAs HBT power amplifying transistor adopts multi-emitter to refer to that structure improves current handling capability and heat-sinking capability when using usually.Yet, because the thermal conductivity of GaAs material itself is very low, the heat that power amplifying transistor produces under large current work state is difficult to distribute timely, the junction temperature of HBT raises, cause transistorized cut-in voltage to descend, under the biasing of base bias voltage, produce the thermoelectric positive feedback of collector current, upwarping appears in the IV curve of device.Junction temperature raises, and has increased the inverse injection electric current of device, has reduced the current gain of device, has caused the thermoelectricity negative feedback characteristic of collector current.The thermoelectricity feedback that the HBT self-heating effect causes will cause the current gain of many finger HBT power amplifying transistors to be caved in, and be the most important thermally labile problem of HBT power amplifying transistor.
In the development of microwave power amplifier, the stability of power amplifying transistor is also the strict factors of considering of needs.In order to increase power output, the size of power amplifying transistor will become greatly, and the real part step-down of its input and output impedance, parasitic feedback strengthen, and causes the K factor to descend, and power amplifying transistor stability reduces; And the S parameter is with frequency change, and power amplifying transistor is stable different different frequency, and general high-frequency section shows as unconditional stability (K＞1), and shows as latent instability (K＜1) in the low and medium frequency section.Make load impedance or the source impedance of device on different frequency point very complicated, and may be along with manufacture craft, the variation of environment for use and changing, the self-oscillation that the port Impedance of device just is very easy to enter the unstable region trigger device on the latent instability frequency range so causes circuit design to lose efficacy.
Therefore, in the design of power amplifier, how to improve power amplifying transistor, particularly the thermal stability of GaAs HBT power amplifying transistor and electrical stability, just become very important problem.A kind of way commonly used is that input or the output at power amplifying transistor adds steady resistance, the thermoelectricity negative feedback characteristic of enhance device, thus make power amplifying transistor be operated in thermally-stabilised zone; Also can add stability network and improve the K factor, make power amplifying transistor work in the stability region.For the application of base stage steady resistance form, the scheme of prior art adopts circuit structure as shown in Figure 1.
As shown in Figure 1, the input of power amplifier comprises input biasing circuit 1 and input matching circuit 2, output comprises output matching circuit 3, resistance R 1 is as the base stage steady resistance of input, be connected between the base stage of input matching circuit 2 and power amplifying transistor T1, capacitor C 1 is as RF-coupled electric capacity, and resistance R 1 parallel connection, connect between the base stage of input matching circuit 2 and power amplifying transistor T1, resistance R 1 and capacitor C 1 have consisted of stabilizing circuit 4.The collector electrode of power amplifying transistor T1 is connected on power supply VCC via an inductance, and simultaneously, collector electrode is connected to radio-frequency (RF) output end RFOUT via output matching circuit 3.
Resistance R 1 is as the base stage steady resistance, can strengthen the thermal stability of power amplifying transistor, simultaneously also can improve electrical stability, capacitor C 1 is as RF-coupled electric capacity and resistance R 1 parallel connection, can reduce the impact on the device power gain, but, can exert an influence to thermal stability when improving electrical stability by the resistance that changes resistance R 1, when the resistance of change resistance R 1 is improved thermal stability, also can exert an influence to electrical stability, thermal stability and the electrical stability that therefore can not obtain simultaneously.
Summary of the invention
The technical problem that (one) will solve
Technical problem to be solved by this invention is to provide a kind of power amplifying transistor circuit and improves the method for power amplifying transistor stability, a kind of GaAs heterogenous dual-pole power amplifying transistor (GaAs HBT power amplifying transistor) circuit and improve its stable method particularly, satisfy the thermal stability of power amplifying transistor and the technical problem of electrical stability to solve to optimize simultaneously, realize good power amplifying transistor design.
(2) technical scheme
For solving above technical problem, one aspect of the present invention is a kind of power amplifying transistor circuit, it comprises a power amplifying transistor and a stabilizing circuit, this stabilizing circuit is connected in the base stage of power amplifying transistor, stabilizing circuit is formed in parallel by a radio frequency input channel and a direct current input channel, the radio frequency input channel is used for improving the electrical stability of power amplifying transistor, and the direct current input channel is used for improving the thermal stability of power amplifying transistor.
According to power amplifying transistor circuit of the present invention, the radio frequency input channel can be comprised of resistance and Capacitance parallel connection, and an end of radio frequency input channel is connected to input matching circuit, and the other end is connected to the base stage of power amplifying transistor.
According to power amplifying transistor circuit of the present invention, the direct current input channel is comprised of a steady resistance, and resistance one end is connected to the input biasing circuit, and the other end also is connected to the base stage of power amplifying transistor.
According to power amplifying transistor circuit of the present invention, the collector electrode of power amplifying transistor is connected to power supply via an inductance.
According to power amplifying transistor circuit of the present invention, the collector electrode of power amplifying transistor is connected to radio-frequency (RF) output end via an output matching circuit.
Power amplifying transistor circuit power amplifier transistor according to the present invention is a GaAs HBT power amplifying transistor.
According to power amplifying transistor circuit of the present invention, the value of resistance and electric capacity can be conditioned, and to obtain optimum frequency stability, improves simultaneously the gain of power amplifying transistor.
According to power amplifying transistor circuit of the present invention, the value of resistance can be conditioned, and caves in to improve current gain, improves thermal stability.
Another aspect of the present invention is a kind of method that improves power amplifying transistor stability, it comprises the steps: to arrange a stabilizing circuit between power amplifying transistor and input matching circuit, this stabilizing circuit is formed in parallel by a radio frequency input channel and a direct current input channel; Utilize this radio frequency input channel to improve the electrical stability of power amplifying transistor; Utilize this direct current input channel to improve the thermal stability of power amplifying transistor.
The method according to this invention, this radio frequency input channel is comprised of resistance and Capacitance parallel connection, and an end of radio frequency input channel is connected to input matching circuit, and the other end is connected to the base stage of power amplifying transistor.
The method according to this invention, this direct current input channel is comprised of a steady resistance, and resistance one end is connected to the input biasing circuit, and the other end also is connected to the base stage of power amplifying transistor.
The power amplifying transistor of the method according to this invention is GaAs HBT power amplifying transistor.
The method according to this invention also comprises the steps: the value of regulating resistance and electric capacity, obtains optimum frequency stability, improves simultaneously the gain of power amplifying transistor.
The method according to this invention is according to the length and width of the emitter of power amplifying transistor and the value that emitter refers to come regulating resistance and electric capacity.
The method according to this invention,, also comprise the steps: the value of regulating resistance, improve current gain and cave in, improve thermal stability.
The method according to this invention is come the value of modification stability resistance (R2) according to the operational characteristic of power amplifying transistor (T1).
(3) beneficial effect
The present invention has added stabilizing circuit at the input of power amplifying transistor, both can make thus power amplifying transistor be in the absolute stability state, thereby make power amplifier circuit be easy to coupling and stable, can obtain again best thermal stability, effectively suppress gain and cave in, also improved simultaneously high frequency stability.
Description of drawings
The present invention will be further described in detail below in conjunction with drawings and Examples:
Fig. 1 is existing power amplifier circuit figure with stabilizing circuit;
Fig. 2 is the power amplifier circuit figure with stabilizing circuit of the present invention;
Fig. 3 connects for the topological connected mode with Fig. 2 the Simulation of stability result schematic diagram that emulation obtains;
Fig. 4 is the circuit diagram of power amplifying transistor circuit of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
A specific embodiment of the present invention is a kind of power amplifying transistor circuit, and the power amplifying transistor that wherein adopts is, as shown in Figure 2.The GaAs HBT power amplifying transistor that this GaAs HBT power amplifying transistor is for example 5.8GHZ.This power amplifying transistor circuit comprises GaAsHBT power amplifying transistor T1 and a stabilizing circuit 5.Described power amplifying transistor T1 has base stage, collector and emitter, and the stabilizing circuit 5 of described power amplifying transistor circuit is connected in the base stage of power amplifying transistor.This stabilizing circuit is formed in parallel by radio frequency input channel and direct current input channel.This radio frequency input channel is used for improving the electrical stability of power amplifying transistor, and this direct current input channel is used for improving the thermal stability of power amplifying transistor.
Preferably, the radio frequency input channel is composed in parallel by resistance R 1 and capacitor C 1, and an end of radio frequency input channel is connected to input matching circuit 2, and the other end is connected to the base stage of power amplifying transistor.The direct current input channel is comprised of a steady resistance R2, and steady resistance R2 one end is connected to input biasing circuit 1, and the other end also is connected to the base stage of power amplifying transistor.The value of resistance R 1 and capacitor C 1 can optimisedly be regulated, thereby obtains optimum frequency stability, improves simultaneously the gain of power amplifying transistor.The value of steady resistance R2 also can be conditioned, and improves its thermal stability thereby improve.
The output of described power amplifying transistor T1 comprises an output matching circuit 3, and these output matching circuit 2 one ends are connected with the collector electrode of power amplifying transistor T1, and the other end is connected with radio-frequency (RF) output end RFOUT; In addition, the collector electrode of power amplifying transistor T1 also is connected with power supply VCC via an inductance L 1.
The 2 μ m GaAs HBT power amplifying transistors of producing take Wenmao Semiconductor Co., Ltd. are as example, select R1=240 Ω, R2=100 Ω, C1=1.8pF, topological connected mode according to Fig. 2 connects, under the prerequisite that guarantees thermal stability, the simulation result of the electrical stability that obtains, as shown in Figure 3.
In Fig. 3, the minimum value of the K factor of power amplifier that is to say also more than 2, all greater than 1, can be in the absolute stability state by the guaranteed output amplifier in 100MHz arrives the frequency range of 8GHz, guarantees the electrical stability of circuit.
More specifically, stabilizing circuit in the embodiment of the present invention as shown in Figure 4, radio frequency path is to be composed in parallel by resistance R 1 and capacitor C 1, and DC channel is comprised of steady resistance R2, and the total end of resistance R 1 and steady resistance R2 is connected in the base stage of power amplifying transistor T1.According to the difference that length and width and the emitter of GaAs HBT power amplifying transistor emitter refers to, the value of resistance R 1 and capacitor C 1 can optimisedly be regulated, thereby obtains optimum frequency stability, improves simultaneously the gain of power amplifying transistor.Resistance R 1 can be improved the frequency stability of power amplifier T1, and capacitor C 1 is used for the coupling radiofrequency signal, reduces the gain loss that resistance R 1 is brought.When the emitter index increased, it is large that parasitic feedback capacitance becomes, and causes the power amplifier stability variation, needs the value of regulating resistance R1 to improve power amplifier stability.The capacitive reactance of general capacitor C 1 should be less than resistance R 1, with coupling radiofrequency signal, the gain loss that compensating resistance R1 brings.The value of steady resistance R2 also can be conditioned according to the operational characteristic of GaAs HBT power amplifying transistor, caves in thereby improve current gain, improves thermal stability.GaAs HBT thermal conductivity is lower, and during the elongated or emitter exponent increase of emitter, the inhomogeneous and thermal coupling of CURRENT DISTRIBUTION aggravation can cause the excess Temperature of mid portion, finally causes current gain to cave in.Increase steady resistance R2, can control the loop current gain f of HBT, improve the power amplifier temperature stability, suppress current gain and cave in.
Need to prove, the concrete regulative mode of resistance R 1, capacitor C 1 and steady resistance R2 is the common practise of power amplifier technical field, no longer launches narration at this.Input biasing circuit 1 described in the present embodiment, input matching circuit 2, output matching circuit 3 are also same as the prior art.
An alternative embodiment of the invention is a kind of method that improves power amplifying transistor stability, and wherein this power tube is GaAs HBT power amplifying transistor T1.The method comprises the steps: to arrange a stabilizing circuit between power amplifying transistor T1 and input matching circuit, this stabilizing circuit is formed in parallel by a radio frequency input channel and a direct current input channel; Utilize this radio frequency input channel to improve the electrical stability of power amplifying transistor, and, utilize this direct current input channel to improve the thermal stability of power amplifying transistor.Specifically, the radio frequency input channel is composed in parallel by resistance R 1 and capacitor C 1, and an end is connected to input matching circuit, and the other end is connected to the base stage of power amplifying transistor; The direct current input channel is comprised of a steady resistance R2, and an end is connected to the input biasing circuit, and the other end is connected to the base stage of power amplifying transistor; This stabilizing circuit and power amplifying transistor T1 be the power amplifying transistor circuit of complete together, can effectively improve thermal stability and the electrical stability of power amplifying transistor.
More particularly, method according to raising power amplifying transistor stability of the present invention, the difference that refers to according to length and width and the emitter of GaAs HBT power amplifying transistor emitter, the value of suitable regulating resistance R1 and capacitor C 1, obtain optimum frequency stability with optimization, improve simultaneously the gain of power amplifying transistor.Resistance R 1 can be improved the frequency stability of power amplifier T1, and capacitor C 1 is used for the coupling radiofrequency signal, reduces the gain loss that resistance R 1 is brought.When the emitter index increased, it is large that parasitic feedback capacitance becomes, and causes the power amplifier stability variation, needs the value of regulating resistance R1 to improve power amplifier stability.The capacitive reactance of general capacitor C 1 should be less than resistance R 1, with coupling radiofrequency signal, the gain loss that compensating resistance R1 brings; According to the value of the suitable modification stability resistance R 2 of operational characteristic of GaAs HBT power amplifying transistor, cave in to improve current gain, improve thermal stability.GaAs HBT thermal conductivity is lower, and during the elongated or emitter exponent increase of emitter, the inhomogeneous and thermal coupling of CURRENT DISTRIBUTION aggravation can cause the excess Temperature of mid portion, finally causes current gain to cave in.Increase steady resistance R2, can control the loop current gain f of HBT, improve the power amplifier temperature stability, suppress current gain and cave in.Need to prove, the method for the value of regulating resistance R1, capacitor C 1 and steady resistance R2 is the common practise of power amplifier technical field, no longer launches narration at this.
In sum, the present invention has added stabilizing circuit at the input of power amplifying transistor, to optimize simultaneously thermal stability and the electrical stability that satisfies power amplifying transistor, realizes good power amplifying transistor design.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (16)
1. power amplifying transistor circuit, comprise a power amplifying transistor (T1) and a stabilizing circuit (5), this stabilizing circuit (5) is connected in the base stage of power amplifying transistor (T1), it is characterized in that: this stabilizing circuit (5) is formed in parallel by a radio frequency input channel and a direct current input channel; This radio frequency input channel is used for improving the electrical stability of power amplifying transistor (T1), and this direct current input channel is used for improving the thermal stability of power amplifying transistor (T1).
2. power amplifying transistor circuit according to claim 1, wherein this radio frequency input channel is composed in parallel by resistance (R1) and electric capacity (C1), one end of radio frequency input channel is connected to input matching circuit (2), and the other end is connected to the base stage of power amplifying transistor (T1).
3. power amplifying transistor circuit according to claim 1, wherein the direct current input channel is comprised of a steady resistance (R2), steady resistance (R2) end is connected to input biasing circuit (1), and the other end also is connected to the base stage of power amplifying transistor (T1).
4. the described power amplifying transistor circuit of according to claim 1-3 any one, wherein the collector electrode of power amplifying transistor (T1) is connected to power supply (VCC) via an inductance (L1).
5. the described power amplifying transistor circuit of according to claim 1-3 any one, wherein the collector electrode of power amplifying transistor (T1) is connected to radio-frequency (RF) output end (RFOUT) via an output matching circuit.
6. the described power amplifying transistor circuit of according to claim 1-3 any one, power amplifying transistor wherein (T1) is GaAs HBT power amplifying transistor.
7. power amplifying transistor circuit according to claim 6, wherein the value of resistance (R1) and electric capacity (C1) is regulated.
8. power amplifying transistor circuit according to claim 6, wherein the value of steady resistance (R2) is adjustable.
9. a method that improves power amplifying transistor stability, is characterized in that comprising the steps:
Between power amplifying transistor (T1) and input matching circuit (2), a stabilizing circuit (5) is set, this stabilizing circuit (5) is formed in parallel by a radio frequency input channel and a direct current input channel;
Utilize this radio frequency input channel to improve the electrical stability of power amplifying transistor;
Utilize this direct current input channel to improve the thermal stability of power amplifying transistor.
10. the method for raising power amplifying transistor stability according to claim 9, wherein this radio frequency input channel is composed in parallel by resistance (R1) and electric capacity (C1), one end of radio frequency input channel is connected to input matching circuit (2), and the other end is connected to the base stage of power amplifying transistor (T1).
11. the method for raising power amplifying transistor stability according to claim 9, wherein this direct current input channel is comprised of a steady resistance (R2), steady resistance (R2) end is connected to input biasing circuit (1), and the other end also is connected to the base stage of power amplifying transistor (T1).
12. the method for the described raising power amplifying transistor of according to claim 9-11 any one stability, power amplifying transistor wherein are GaAs HBT power amplifying transistor.
13. the method for raising power amplifying transistor stability according to claim 12, also comprise the steps: the value of regulating resistance (R1) and electric capacity (C1), obtain optimum frequency stability, improve simultaneously the gain of power amplifying transistor (T1).
14. the method for raising power amplifying transistor stability according to claim 13 is wherein according to the length and width of the emitter of power amplifying transistor (T1) and the value that emitter refers to come regulating resistance (R1) and electric capacity (C1).
15. the method for raising power amplifying transistor stability according to claim 12 also comprises the steps: the value of modification stability resistance (R2), improves current gain and caves in, and improves thermal stability.
16. the method for raising power amplifying transistor stability according to claim 15 is wherein come the value of modification stability resistance (R2) according to the operational characteristic of power amplifying transistor (T1).
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Cited By (4)
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| CN104765300A (en) * | 2015-02-10 | 2015-07-08 | 重庆大学 | Power module heat management device and method based on self-adaptive adjustment of driving circuit |
| CN106301255A (en) * | 2016-11-04 | 2017-01-04 | 杭州迦美信芯通讯技术有限公司 | Wideband power amplifer and active matching circuit thereof |
| CN108494374A (en) * | 2018-04-09 | 2018-09-04 | 中国科学院微电子研究所 | A kind of RF power amplifier circuit |
| CN110380693A (en) * | 2019-07-25 | 2019-10-25 | 中国电子科技集团公司第二十四研究所 | Low pressure broadband medium_power radio frequency amplifier based on HBT technique |
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| CN104765300A (en) * | 2015-02-10 | 2015-07-08 | 重庆大学 | Power module heat management device and method based on self-adaptive adjustment of driving circuit |
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| CN108494374A (en) * | 2018-04-09 | 2018-09-04 | 中国科学院微电子研究所 | A kind of RF power amplifier circuit |
| CN110380693A (en) * | 2019-07-25 | 2019-10-25 | 中国电子科技集团公司第二十四研究所 | Low pressure broadband medium_power radio frequency amplifier based on HBT technique |
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Application publication date: 20130508 |