CN109818587A - A kind of adaptive-biased radio-frequency power amplifier - Google Patents
A kind of adaptive-biased radio-frequency power amplifier Download PDFInfo
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- CN109818587A CN109818587A CN201711161190.5A CN201711161190A CN109818587A CN 109818587 A CN109818587 A CN 109818587A CN 201711161190 A CN201711161190 A CN 201711161190A CN 109818587 A CN109818587 A CN 109818587A
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Abstract
This application discloses a kind of adaptive-biased radio-frequency power amplifiers, including amplifying circuit and biasing circuit.There is power transistor in amplifying circuit, there is biasing transistor in biasing circuit, the emitter for biasing transistor provides bias current and/or bias voltage by the base stage that resistance connects power transistor for it.There are also a capacitive series branch in biasing circuit, at least two capacitors are in series；The base stage of one end connection power transistor of the capacitive series branch, other end ground connection.The application reduces adverse effect of the base-collector parasitic capacitor to the linearity of power transistor, improves the AM-PM imbalance of radio-frequency power amplifier；The gain compression phenomenon for having delayed radio-frequency power amplifier improves the AM-AM imbalance of radio-frequency power amplifier.
Description
Technical field
This application involves a kind of radio-frequency power amplifiers.
Background technique
With the development of mobile communication technology, data traffic is continued to increase, and frequency spectrum resource becomes increasingly depleted.In order to solve
Problems, Modern Mobile Communications Systems generally use linearity modulation technique, such as QPSK(Quadrature Phase Shift
Keying, quadrature phase shift keying), QAM(Quadrature Amplitude Modulation, quadrature amplitude modulation), HPSK
(Hybrid Phase Shift Keying, Hybrid Phase Shift Keying), OFDM(Orthogonal Frequency Division
Multiplexing, orthogonal frequency division multiplexing) etc..The signal that above-mentioned modulation system generates is the modulated signal of non-constant-envelope,
And system is that multicarrier is multi channel again, the peak-to-average force ratio (PAR, Peak-to-Average Ratio) of signal is very big.
Radio-frequency power amplifier is the important component of mobile communication system, the amplification list last as transmission channel
Member, effect are that antenna transmitting is sent to after amplifying low power radiofrequency signal.The design objective of radio-frequency power amplifier
Generally include output power (Pout), efficiency (PAE), gain (gain), bandwidth and linearity (linearity) etc..For
For the mobile communication system of linearity modulation technique, the linearity index of radio-frequency power amplifier is extremely important.Radio frequency function
Rate amplifier it is any it is non-linear be all easy to produce undesirable frequency component, this can seriously affect the property of mobile communication system
Energy.
Overall cost and performance factor, the power transistor in radio-frequency power amplifier generally use GaAs HBT
(heterojunction bipolar transistor, heterojunction bipolar transistor) technique.Referring to Fig. 1, this is HBT
Parasitic capacitance schematic diagram.HBT has base stage (Base), collector (Collector) and emitter (Emitter).In base stage and
There is base-collector parasitic capacitor Cbc between collector, there is the parasitic electricity of base-emitter between base stage and emitter
Hold Cbe, there is collector-emitter parasitic capacitance Cce between collector and emitter.General radio-frequency power amplifier is wished
Output power is larger, and the dc power of power supply cannot be absolutely converted to radiofrequency signal output by radio-frequency power amplifier
Power, this just brings heat dissipation problem.It for the benefit of radiates, the usual area of power transistor is larger, this makes parasitic capacitance meeting again
Increase.Under the smaller and biggish different situations of output power in radio-frequency power amplifier, these parasitic capacitances are variation, institute
To produce phase detuning (AM-PM imbalance) with the increase of output power, between input power and output power.In addition, penetrating
Frequency power amplifier is during being enlarged into high-power signal for low-power level signal, it may appear that with the increase of output power,
, there is gain compression in the phenomenon that gain reduction, this just produces amplitude imbalance (AM-AM imbalance).
" IEEE JOURNAL OF SOLID-STATE CIRCUITS " the 9th phase of volume 37 that in September, 2002 is published has one
Piece article " PCS/W-CDMA Dual-Band MMIC Power Amplifier With a Newly Proposed
Linearizing Bias Circuit " (hereinafter referred to as document A).Fig. 1 of this article gives a kind of penetrating for automatic biasing structure
Frequency power amplifier increases ground capacity Cb in the base stage of active biased transistor.As input power increases, biasing circuit
Impedance reduces, and the part that radio-frequency power is coupled into biasing circuit increases, and biasing circuit can extract bigger DC current, active
The base emitter voltage decline of transistor is biased, the base bias voltage decline of power transistor finally improves linear
Degree.But the program does not reduce the parasitic capacitance of power transistor, and AM-PM imbalance still has room for promotion.
There is a piece in " the IEEE Microwave and Optical Technology Letters " that in June, 2006 publishes
Article " A Compact Composite Transistor as a Novel RF Power Cell for High
Linearity Power Amplifiers".This article describes the base-collector parasitic by reducing power transistor
Capacitor Cbc lacks of proper care to reduce AM-PM.But the AM-AM imbalance of the program still has room for promotion.
The Chinese invention patent application that application publication number is CN106571780A, data of publication of application is on April 19th, 2017
A kind of radio-frequency power amplifier is disclosed in " a kind of adaptive-biased radio-frequency power amplifier " (hereinafter referred to as document B).Wherein
Power stage amplifying circuit use cascode(cascade) structure, common source transistors rise signal amplification, altogether gate transistor
Play raising pressure resistance.As input power increases, the conducting voltage of gate transistor is reduced altogether, so that common source transistors
Drain voltage delay decline, improves gain compression.Furthermore the grid for being total to gate transistor is connected with the capacitor in biasing circuit, from
And reduce grid-collector parasitic capacitance of total gate transistor.The disadvantages of this solution is: improving the technological means of the linearity simultaneously
It is indirect to act on amplifying transistor, but act directly on resistance to piezoelectric crystal, it is that AM- is improved by indirect mode
AM imbalance and AM-PM imbalance, still there is room for promotion.
The Chinese invention patent application that application publication number is CN103715997A, data of publication of application is on April 9th, 2014
" a kind of circuit for improving power amplifier linearity " discloses a kind of radio-frequency power amplifier.It is wherein brilliant in current source and power
Increase a diode between the input terminal of body pipe, by adjusting the working condition of the diode, so that radio-frequency input signals produces
The raw distorted characteristic opposite with power amplifier, achievees the purpose that linearisation with this.Simultaneously as input power increases, two pole
Pipe Direct/Reverse respectively accounts for a half period (forward condition capacity effect is very weak), so resistance plays compensating action to the linearity.It should
Scheme does not reduce the parasitic capacitance of power transistor, and AM-PM imbalance still has room for promotion.The program is also without improving gain pressure
Contracting, AM-AM imbalance also have room for promotion.
Summary of the invention
The technical problem to be solved by the application is to provide a kind of radio-frequency power amplifiers, at the same improve AM-PM imbalance and
AM-AM imbalance, promotes the linearity.
In order to solve the above technical problems, adaptive-biased radio-frequency power amplifier provided by the present application includes amplifying circuit
And biasing circuit.There is power transistor in amplifying circuit, there is biasing transistor in biasing circuit, bias the transmitting of transistor
Pole provides bias current and/or bias voltage by the base stage that resistance connects power transistor for it.There are also one in biasing circuit
Capacitive series branch, at least two capacitors are in series；The base of one end connection power transistor of the capacitive series branch
Pole, other end ground connection.The base-collector parasitic capacitor of power transistor is grounded by the capacitive series branch, is reduced
To the adverse effect of the linearity, the AM-PM for improving radio-frequency power amplifier loses the base-collector parasitic capacitor of power transistor
It adjusts, improves the linearity.
Further, the base stage of at least one capacitance connection power transistor in the capacitive series branch and biasing are brilliant
The base stage of body pipe, the capacitor are used to for radio-frequency input signals being coupled to the base stage of biasing transistor.In the capacitive series branch
At least another capacity earth, which reduces the impedance of biasing circuit, so that radiofrequency signal is coupled to biasing circuit more
It is easy.When the two capacitors are used to increase when RF input power increases, radio-frequency input signals is coupled to biasing crystal
The base stage of pipe, so that the quiescent voltage of the base stage of biasing transistor increases, so that biasing transistor is supplied to power transistor
Base current increases, this has delayed the gain compression phenomenon of radio-frequency power amplifier, has improved the AM-AM of radio-frequency power amplifier
Imbalance, improves the linearity.
Preferably, in the amplifying circuit, the base stage of power transistor receives radio-frequency input signals by capacitor three；Power
The emitter of transistor is grounded；The collector of power transistor exports amplified radiofrequency signal；In the base stage of power transistor
There is base-collector parasitic capacitor between collector.This is a kind of specific implementation of amplifying circuit.
Preferably, in the biasing circuit, the base stage connection partial pressure branch of transistor is biased, function is also connected by capacitor one
The base stage of rate transistor is also grounded by capacitor two；Capacitor one and the capacitive series branch in series of capacitor two.Biasing
The collector of transistor connects supply voltage；The emitter of biasing transistor is connected to the base of power transistor by resistance two
Pole.The partial pressure branch is to be sequentially connected in series resistance one, diode one and diode two between the supply voltage and ground to constitute；
The base stage of biasing transistor is connected in partial pressure branch between resistance one and diode one, is attached to the anode of diode one.
This is the first specific implementation of biasing circuit.
Further, also there is mirrored transistor in the biasing circuit.The base stage of biasing transistor is connected to mirror image crystalline substance
The collector of body pipe.The base stage of biasing transistor also passes through the base stage that capacitor one connects power transistor, is also connect by capacitor two
Ground.Capacitor one and the capacitive series branch in series of capacitor two.The collector for biasing transistor connects supply voltage.Partially
The emitter for setting transistor connects the base stage of power transistor by resistance two.The base stage of mirrored transistor is connected by resistance three
Bias the emitter of transistor.The collector of mirrored transistor connects supply voltage by resistance one.The transmitting of mirrored transistor
Pole ground connection.Mirrored transistor and biasing transistor constitute current mirroring circuit.This is second of specific implementation of biasing circuit.
Optionally, capacitor one is replaced with into diode three, the base stage of the cathode connection biasing transistor of diode three, anode
Connect the base stage of power transistor.It is in parallel with tunable capacitor one that the diode three is equivalent to adjustable resistance one.Adjustable resistance
One resistance value and the capacitance of tunable capacitor one are changed according to the both end voltage difference of the diode three.It is therein adjustable
Capacitor one and substituted capacitor one play identical action and function.Tunable capacitor one and the electricity in series of capacitor two
Hold series arm.Capacitor of the tunable capacitor one also as the base stage of connection power transistor and the base stage of biasing transistor.
Optionally, capacitor two is replaced with into diode four, the base stage of the cathode connection biasing transistor of diode four, anode
Ground connection.It is in parallel with tunable capacitor two that the diode four is equivalent to adjustable resistance two.The resistance value of adjustable resistance two with it is adjustable
The capacitance of capacitor two is changed according to the both end voltage difference of the backward dioded four.Tunable capacitor two therein with taken
The capacitor two in generation serves the same role and function.Capacitor one and the capacitive series branch in series of tunable capacitor two.
Optionally, capacitor one is replaced with into diode three, the base stage of the cathode connection biasing transistor of diode three, anode
Connect the base stage of power transistor.It is in parallel with tunable capacitor one that the diode three is equivalent to adjustable resistance one.By capacitor two
Replace with diode four, the base stage of the cathode connection biasing transistor of diode four, plus earth.The diode four is equivalent to
Adjustable resistance two is in parallel with tunable capacitor two.Tunable capacitor one and the capacitor series connection branch in series of tunable capacitor two
Road.Capacitor of the tunable capacitor one also as the base stage of connection power transistor and the base stage of biasing transistor.
Further, the part or all of diode be the base stage of HBT and collector are shorted it is equivalent made of, HBT
The base stage and collector of short circuit are equivalent to the anode of diode, and the emitter of HBT is equivalent to the cathode of diode.This can be by two
Pole pipe manufacture is integrated among HBT manufacture, simplifies manufacturing process.
Preferably, some or all of the power transistor, biasing transistor, mirrored transistor are GaAs HBT.It penetrates
Frequency power amplifier realizes all there is advantage in performance and cost using GaAs HBT.
What the application obtained has the technical effect that the base-collector parasitic capacitor pair on the one hand reducing power transistor
The adverse effect of the linearity improves the AM-PM imbalance of radio-frequency power amplifier.On the other hand radio-frequency power amplifier has been delayed
Gain compression phenomenon, improve radio-frequency power amplifier AM-AM imbalance.
Detailed description of the invention
Fig. 1 is the parasitic capacitance schematic diagram of HBT.
Fig. 2 is the electrical block diagram of the embodiment one of the adaptive-biased radio-frequency power amplifier of the application.
Fig. 3 is that the base-collector parasitic capacitor of power transistor in Fig. 2 and the concatenated equivalent circuit of newly-increased capacitor are illustrated
Figure.
Fig. 4 is the first flexible circuit structural representation of the embodiment one of the adaptive-biased radio-frequency power amplifier of the application
Figure.
Fig. 5 is the schematic equivalent circuit of three D3 of diode of the Opposite direction connection in Fig. 4.
Fig. 6 is the second flexible circuit structural representation of the embodiment one of the adaptive-biased radio-frequency power amplifier of the application
Figure.
Fig. 7 is the schematic equivalent circuit of four D4 of diode of the Opposite direction connection in Fig. 6.
Fig. 8 is the third flexible circuit structural representation of the embodiment one of the adaptive-biased radio-frequency power amplifier of the application
Figure.
Fig. 9 be three D3 of diode of Opposite direction connection in Fig. 8, Opposite direction connection four D4 of diode schematic equivalent circuit.
Figure 10 is the electrical block diagram of the embodiment two of the adaptive-biased radio-frequency power amplifier of the application.
Figure 11 is the gain of radio-frequency power amplifier and the curved line relation schematic diagram of output power.
Figure 12 is the phase of radio-frequency power amplifier and the curved line relation schematic diagram of output power.
Description of symbols in figure: Cbc is base-collector parasitic capacitor；Cbe is base-emitter parasitic capacitance；
Cce is collector-emitter parasitic capacitance；RFin is radio-frequency input signals；RFout is radio frequency output signal；HBT1 is power
Transistor；HBT2 is biasing transistor；HBT3 is mirrored transistor；R is resistance；C is capacitor；D is diode.
Specific embodiment
Referring to Fig. 2, this is the embodiment one of adaptive-biased radio-frequency power amplifier provided by the present application, it is main to wrap
Include amplifying circuit and biasing circuit.
The amplifying circuit mainly includes power transistor HBT1, e.g. GaAs HBT.Radio-frequency input signals RFin is logical
The base stage that three C3 of capacitor is connected to power transistor HBT1, the emitter ground connection of power transistor HBT1 are crossed, collector output is put
Radiofrequency signal after big.The amplified radiofrequency signal obtains radio frequency output after output matching network carries out impedance matching
Signal RFout.There is base-collector parasitic capacitor Cbc between the base stage and collector of power transistor HBT1, this is to make
One of nonlinear principal element of power transistor HBT1.
The biasing circuit mainly includes biasing transistor HBT2, e.g. GaAs HBT.In power source voltage Vcc and ground
Between be sequentially connected in series one R1 of resistance, one D1 of diode and two D2 of diode and constitute partial pressure branch.Diode is, for example, by HBT's
Made of base stage and collector short circuit are equivalent, base stage and collector that HBT is shorted are equivalent to the anode of diode, the transmitting of HBT
Pole is equivalent to the cathode of diode.Biasing transistor HBT2 base stage (i.e. node A) be connected to partial pressure branch in one R1 of resistance and
Between one D1 of diode, it is attached to the anode of one D1 of diode.Node A also passes through one C1 connection power transistor HBT1 of capacitor
Base stage (i.e. node B).Node A also passes through two C2 of capacitor ground connection.The collector for biasing transistor HBT2 connects supply voltage
Vcc, emitter are attached to the base stage of power transistor HBT1 by two R2 connecting node B of resistance.Bias transistor HBT2's
Emitter provides bias current to the base stage of power transistor HBT1.
It is provided by the present application adaptive compared with existing adaptive-biased radio-frequency power amplifier (such as document A)
The embodiment one of the radio-frequency power amplifier of biasing has following features and beneficial technical effect.
First, one C1 of capacitor, two C2 of capacitor in biasing circuit a capacitive series branch in series, power crystal
The base-collector parasitic capacitor Cbc of pipe HBT1 is grounded by the capacitive series branch, this can be equivalent to shown in Fig. 3
Circuit.Equivalent capacity C12 in Fig. 3 is exactly the sum of the series capacitance of one C1 of capacitor Yu two C2 of capacitor, C12=C1 × C2/ (C1+
C2).It is small by the sum of base-collector parasitic capacitor Cbc, one C1 of capacitor, two C2 of the capacitor series capacitance of series arm formed
In base-collector parasitic capacitor Cbc, therefore the base-collector parasitic capacitor Cbc of power transistor HBT1 is reduced, changed
It has been apt to the AM-PM imbalance of radio-frequency power amplifier, has improved the linearity.
Second, radio-frequency input signals RFin is coupled to biasing transistor by one C1 of capacitor in the capacitive series branch
The base stage of HBT2.Two C2 of capacitor in the capacitive series branch reduces the impedance of biasing circuit, so that radio-frequency input signals
RFin is easier to be coupled to biasing transistor HBT2.As the input power of radio-frequency input signals RFin increases, transistor is biased
The average base voltage of HBT2 increases, therefore biases the base current increase that transistor HBT2 is supplied to power transistor HBT1,
This has delayed the gain compression phenomenon of radio-frequency power amplifier, improves the AM-AM imbalance of radio-frequency power amplifier, also improves
The linearity.
It is provided by the present application adaptive compared with existing adaptive-biased radio-frequency power amplifier (such as document B)
The AM-PM imbalance for the power transistor that the embodiment one of the radio-frequency power amplifier of biasing is amplified directly against responsible signal, AM-
AM imbalance is improved, and improvement becomes apparent than indirect mode, and circuit design is more reasonable ingenious.
Referring to Fig. 4, this is first flexible circuit of above-described embodiment one.The difference of first flexible circuit and embodiment one
It is only that: one C1 of capacitor in embodiment one is replaced with to three D3 of diode of Opposite direction connection.In first flexible circuit, biasing
Between the base stage (i.e. node A) of transistor HBT2 and the base stage (i.e. node B) of power transistor HBT1 have three D3 of diode into
Row Opposite direction connection.Opposite direction connection refers to the cathode connecting nodes A of three D3 of diode, anode connecting node B.Three D3 of diode is for example
Be the base stage of HBT and collector are shorted it is equivalent made of, base stage and collector that HBT is shorted are equivalent to the anode of diode,
The emitter of HBT is equivalent to the cathode of diode.
Referring to Fig. 5, this is the equivalent circuit of three D3 of diode of the Opposite direction connection in Fig. 4.Due to Fig. 4 interior joint A's
Quiescent voltage be higher than node B quiescent voltage, therefore three D3 of diode of Opposite direction connection be equivalent to one Ra1 of adjustable resistance with it is adjustable
The parallel network of one Ca1 of capacitor.The resistance value of one Ra1 of adjustable resistance, the capacitance of one Ca1 of tunable capacitor with node A with
Voltage difference between node B and change.It is similar with embodiment one, three D3 of diode institute of the Opposite direction connection in biasing circuit etc.
One Ca1 of tunable capacitor, two C2 of capacitor that effect comes out capacitive series branch in series, the base of power transistor HBT1
Pole-collector parasitic capacitance Cbc is grounded by the capacitive series branch, and it reduce base stage-collection of power transistor HBT1
Electrode parasitic capacitance Cbc improves the AM-PM imbalance of radio-frequency power amplifier, improves the linearity.The diode of Opposite direction connection
Three D3 it is equivalent come out one Ca1 of tunable capacitor by radio-frequency input signals RFin be coupled to biasing transistor HBT2 base stage, electricity
Hold two C2 and reduce the impedance of biasing circuit and radio-frequency input signals RFin is made to be easier to be coupled to biasing transistor HBT2, this prolongs
The gain compression phenomenon for having delayed radio-frequency power amplifier improves the AM-AM imbalance of radio-frequency power amplifier, also improves linear
Degree.
Referring to Fig. 6, this is second flexible circuit of above-described embodiment one.The difference of second flexible circuit and embodiment one
It is only that: two C2 of capacitor in embodiment one is replaced with to four D4 of diode of Opposite direction connection.In second flexible circuit, biasing
Between the base stage (i.e. node A) and ground of transistor HBT2 there is four D4 of diode to carry out Opposite direction connection.Opposite direction connection refers to two poles
The cathode connecting nodes A of four D4 of pipe, plus earth.Four D4 of diode be, for example, by the base stage of HBT and collector be shorted it is equivalent and
At, base stage and collector that HBT is shorted are equivalent to the anode of diode, and the emitter of HBT is equivalent to the cathode of diode.
Referring to Fig. 7, this is the equivalent circuit of four D4 of diode of the Opposite direction connection in Fig. 6.Due to Fig. 6 interior joint A's
Quiescent voltage above Ground, therefore four D4 of diode of Opposite direction connection be equivalent to two Ra2 of adjustable resistance and tunable capacitor two Ca2's and
Networking network.The resistance value of two Ra2 of adjustable resistance, the capacitance of two Ca2 of tunable capacitor change with the voltage of node A.With
Embodiment one is similar, four D4 of diode of one C1 of capacitor, Opposite direction connection in biasing circuit it is equivalent come out tunable capacitor two
Ca2 capacitive series branch in series, the base-collector parasitic capacitor Cbc of power transistor HBT1 pass through described
Capacitive series branch ground connection, it reduce the base-collector parasitic capacitor Cbc of power transistor HBT1, improve radio frequency function
The AM-PM of rate amplifier lacks of proper care, and improves the linearity.Radio-frequency input signals RFin is coupled to biasing transistor by one C1 of capacitor
The base stage of HBT2, four D4 of diode of Opposite direction connection equivalent two Ca2 of tunable capacitor come out reduce the impedance of biasing circuit
So that radio-frequency input signals RFin is easier to be coupled to biasing transistor HBT2, this has delayed the gain pressure of radio-frequency power amplifier
Contracting phenomenon improves the AM-AM imbalance of radio-frequency power amplifier, also improves the linearity.
Referring to Fig. 8, this is the third flexible circuit of above-described embodiment one.The difference of third flexible circuit and embodiment one
It is only that: one C1 of capacitor in embodiment one is replaced with to three D3 of diode of Opposite direction connection, two C2 of capacitor, which is replaced with, reversely to be connected
Four D4 of diode connect.In third flexible circuit, in the base stage (i.e. node A) and power transistor HBT1 of biasing transistor HBT2
Base stage (i.e. node B) between have three D3 of diode carry out Opposite direction connection.Opposite direction connection refers to that the cathode of three D3 of diode connects
Meet node A, anode connecting node B.Biasing transistor HBT2 base stage (i.e. node A) and ground between have four D4 of diode into
Row Opposite direction connection.Opposite direction connection refers to the cathode connecting nodes A of four D4 of diode, plus earth.Three D3 of diode, diode four
D4 be, for example, by the base stage of HBT and collector be shorted it is equivalent made of, the base stage and collector that HBT is shorted are equivalent to diode
The emitter of anode, HBT is equivalent to the cathode of diode.
Referring to Fig. 9, this be three D3 of diode of the Opposite direction connection in Fig. 8, Opposite direction connection four D4 of diode it is equivalent
Circuit.Since the quiescent voltage of Fig. 8 interior joint A is higher than the quiescent voltage of node B, three D3 of diode of Opposite direction connection is equivalent
For the parallel network of one Ra1 of adjustable resistance and one Ca1 of tunable capacitor.The resistance value of one Ra1 of adjustable resistance, one Ca1 of tunable capacitor
Capacitance change with the voltage difference between node A and node B.Since the quiescent voltage of Fig. 8 interior joint A is higher than
Ground, therefore four D4 of diode of Opposite direction connection is equivalent to the parallel network of two Ra2 of adjustable resistance Yu two Ca2 of tunable capacitor.It is adjustable
The resistance value of two Ra2 of resistance, the capacitance of two Ca2 of tunable capacitor change with the voltage of node A.With embodiment one kind
Seemingly, three D3 of diode of the Opposite direction connection in biasing circuit it is equivalent come out one Ca1 of tunable capacitor, Opposite direction connection diode
Four D4 equivalent two Ca2 of the tunable capacitor capacitive series branch in series come out, the base stage-of power transistor HBT1
Collector parasitic capacitance Cbc is grounded by the capacitive series branch, and it reduce the base-collector junctions of power transistor HBT1
Parasitic capacitance Cbc improves the AM-PM imbalance of radio-frequency power amplifier, improves the linearity.Three D3 of diode of Opposite direction connection
It is equivalent come out one Ca1 of tunable capacitor by radio-frequency input signals RFin be coupled to biasing transistor HBT2 base stage, reversely connect
Four D4 of diode connect equivalent two Ca2 of tunable capacitor come out reduce the impedance of biasing circuit and make radio-frequency input signals
RFin is easier to be coupled to biasing transistor HBT2, this has delayed the gain compression phenomenon of radio-frequency power amplifier, has improved and penetrate
The AM-AM of frequency power amplifier lacks of proper care, and also improves the linearity.
Referring to Fig. 10, this is the embodiment two of adaptive-biased radio-frequency power amplifier provided by the present application.Implement
Example two also mainly includes amplifying circuit and biasing circuit, and amplifying circuit therein is the same as example 1, biasing circuit therein
It is different from embodiment one.Biasing circuit in embodiment two mainly includes biasing transistor HBT2 and mirrored transistor HBT3, example
As being all GaAs HBT.Resistance one R1 and mirrored transistor HBT3 has been sequentially connected in series between power source voltage Vcc and ground.Mirror image
The collector of transistor HBT3 connects one R1 of resistance, emitter ground connection.The base stage (i.e. node A) of biasing transistor HBT2 is connected to
The collector of mirrored transistor HBT3.Node A also passes through the base stage (i.e. node B) of one C1 connection power transistor HBT1 of capacitor.
Node A also passes through two C2 of capacitor ground connection.The collector for biasing transistor HBT2 connects power source voltage Vcc, and emitter passes through resistance
Two R2 connecting node B, are attached to the base stage of power transistor HBT1.The base stage of mirrored transistor HBT3 is connected by three R3 of resistance
It is connected to the emitter of biasing transistor HBT2.The emitter for biasing transistor HBT2 provides partially to the base stage of power transistor HBT1
Set electric current.
In the biasing circuit of embodiment two, biasing transistor HBT2 and mirrored transistor HBT3 constitutes current mirror.Implement
The working principle of example two is similar with embodiment one.On the one hand, the base-collector parasitic capacitor Cbc of power transistor HBT1 is logical
The capacitive series branch ground connection that one C1 of capacitor, two C2 of capacitor crossed in biasing circuit is constituted, which improve radio-frequency power amplifiers
AM-PM imbalance, improve the linearity.On the other hand, radio-frequency input signals RFin is coupled to biasing transistor by one C1 of capacitor
The base stage of HBT2, the impedance that two C2 of capacitor reduces biasing circuit make radio-frequency input signals RFin be easier to be coupled to biasing crystalline substance
Body pipe HBT2, which improve the AM-AM of radio-frequency power amplifier imbalances, also improve the linearity.Embodiment two is also direct needle
AM-PM imbalance, the AM-AM imbalance of the power transistor of responsible signal amplification are improved, improvement is more than indirect mode
To be obvious, circuit design is more reasonable ingenious.
With embodiment one tool there are three types of flexible circuit analogously, one C1 of capacitor in embodiment two, which can be replaced, reversely to be connected
Three D3 of diode connect, two C2 of capacitor can be replaced four D4 of diode of Opposite direction connection, this two replacements can individually replace or
It replaces simultaneously.
Figure 11 is please referred to, this is the gain of radio-frequency power amplifier and the curved line relation schematic diagram of output power.It is wherein bent
Line A indicates that traditional adaptive-biased radio-frequency power amplifier, curve B indicate the adaptive-biased radio-frequency power of the application
Amplifier.Experiment shows that curve A enters gain earlier with output power increase (also indicating that as input power increases)
Compression stage；Curve B is then introduced into the gain extension stage, enters back into the gain compression stage.Curve B enters later than curve A to be increased
Beneficial compression stage.This shows that the application improves AM-AM imbalance.
Figure 12 is please referred to, this is the phase of radio-frequency power amplifier and the curved line relation schematic diagram of output power.It is wherein bent
Line A indicates that traditional adaptive-biased radio-frequency power amplifier, curve B indicate the adaptive-biased radio-frequency power of the application
Amplifier.Experiment shows that phase occurs earlier in curve A with output power increase (also indicating that as input power increases)
There is phase detuning laterly in imbalance, curve B.This shows that the application improves AM-PM imbalance.
The above is only preferred embodiment of the present application, it is not used to limit the application.Come for those skilled in the art
It says, various changes and changes are possible in this application.Within the spirit and principles of this application, made any modification, equivalent
Replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of adaptive-biased radio-frequency power amplifier, including amplifying circuit and biasing circuit；There is function in amplifying circuit
Rate transistor has biasing transistor in biasing circuit, and the emitter for biasing transistor passes through resistance connection power transistor
Base stage provides bias current and/or bias voltage for it；It is characterized in that there are also a capacitive series branch in biasing circuit, until
It is in series for two capacitors less；The base stage of one end connection power transistor of the capacitive series branch, other end ground connection.
2. adaptive-biased radio-frequency power amplifier according to claim 1, characterized in that the capacitive series branch
In at least one capacitance connection power transistor base stage and biasing transistor base stage, in the capacitive series branch extremely
Another few capacity earth.
3. adaptive-biased radio-frequency power amplifier according to claim 1, characterized in that in the amplifying circuit,
The base stage of power transistor receives radio-frequency input signals by capacitor three；The emitter of power transistor is grounded；Power transistor
Collector export amplified radiofrequency signal；It is posted between the base stage and collector of power transistor with base-collector junction
Raw capacitor.
4. adaptive-biased radio-frequency power amplifier according to claim 1, characterized in that in the biasing circuit,
The base stage connection partial pressure branch for biasing transistor, the base stage of power transistor is also connected by capacitor one, is also connect by capacitor two
Ground；Capacitor one and the capacitive series branch in series of capacitor two；The collector for biasing transistor connects supply voltage；Partially
The emitter for setting transistor is connected to the base stage of power transistor by resistance two；The partial pressure branch is in supply voltage and ground
Between be sequentially connected in series resistance one, diode one and diode two are constituted；The base stage of biasing transistor is connected to partial pressure branch
Between middle resistance one and diode one, it is attached to the anode of diode one.
5. adaptive-biased radio-frequency power amplifier according to claim 1, characterized in that in the biasing circuit also
Using mirrored transistor；The base stage of biasing transistor is connected to the collector of mirrored transistor；The base stage for biasing transistor is also logical
The base stage that capacitor one connects power transistor is crossed, is also grounded by capacitor two；Capacitor one and the electricity in series of capacitor two
Hold series arm；The collector for biasing transistor connects supply voltage；The emitter for biasing transistor connects function by resistance two
The base stage of rate transistor；The emitter that the base stage of mirrored transistor passes through the connection biasing transistor of resistance three；Mirrored transistor
Collector connects supply voltage by resistance one；The emitter of mirrored transistor is grounded；Mirrored transistor and biasing transistor structure
At current mirroring circuit.
6. adaptive-biased radio-frequency power amplifier according to claim 4 or 5, characterized in that replace capacitor one
For diode three, the base stage of the cathode connection biasing transistor of diode three, anode connects the base stage of power transistor；Described two
It is in parallel with tunable capacitor one that pole pipe three is equivalent to adjustable resistance one；Tunable capacitor one and the capacitor in series of capacitor two
Series arm；Capacitor of the tunable capacitor one also as the base stage of connection power transistor and the base stage of biasing transistor.
7. adaptive-biased radio-frequency power amplifier according to claim 4 or 5, characterized in that replace capacitor two
For diode four, the base stage of the cathode connection biasing transistor of diode four, plus earth；The diode four is equivalent to adjustable
Resistance two is in parallel with tunable capacitor two；Capacitor one and the capacitive series branch in series of tunable capacitor two.
8. the adaptive-biased radio-frequency power amplifier according to claim 4 or 6, characterized in that replace capacitor one
For diode three, the base stage of the cathode connection biasing transistor of diode three, anode connects the base stage of power transistor；Described two
It is in parallel with tunable capacitor one that pole pipe three is equivalent to adjustable resistance one；Capacitor two is replaced with into diode four, the yin of diode four
The base stage of pole connection biasing transistor, plus earth；The diode four be equivalent to adjustable resistance two and tunable capacitor two and
Connection；Tunable capacitor one and the capacitive series branch in series of tunable capacitor two；Tunable capacitor one is also as connection power
The capacitor of the base stage of the base stage and biasing transistor of transistor.
9. adaptive-biased radio-frequency power amplifier according to claim 4 or 5, characterized in that the power crystal
Some or all of pipe, biasing transistor, mirrored transistor are GaAs HBT.
10. adaptive-biased radio-frequency power amplifier according to claim 5 or 6, characterized in that the part is complete
Portion's diode be the base stage of HBT and collector are shorted it is equivalent made of, the base stage and collector that HBT is shorted are equivalent to diode
Anode, the emitter of HBT is equivalent to the cathode of diode.
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| CN201711161190.5A CN109818587B (en) | 2017-11-21 | 2017-11-21 | Self-adaptive bias radio frequency power amplifier |
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| CN110190824A (en) * | 2019-05-30 | 2019-08-30 | 广东工业大学 | A kind of active biased network and a kind of radio-frequency power amplifier |
| CN111147033A (en) * | 2020-01-02 | 2020-05-12 | 尚睿微电子（上海）有限公司 | Power amplifier and electronic equipment based on HBT circuit structure |
| CN111404501A (en) * | 2020-03-26 | 2020-07-10 | 芯朴科技(上海)有限公司 | Bias circuit of thermal tracking compensation power amplifier |
| WO2021077594A1 (en) * | 2019-10-23 | 2021-04-29 | 广州慧智微电子有限公司 | Power amplifier and electronic device |
| CN113783540A (en) * | 2021-08-17 | 2021-12-10 | 深圳飞骧科技股份有限公司 | Power amplifier circuit and bias circuit thereof |
| CN114553151A (en) * | 2022-02-25 | 2022-05-27 | 优镓科技(苏州)有限公司 | Doherty power amplifier based on self-adaptive bias |
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