CN102111112A - Radio frequency power amplifier and front-end transmitter - Google Patents
Radio frequency power amplifier and front-end transmitter Download PDFInfo
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- CN102111112A CN102111112A CN2009103123873A CN200910312387A CN102111112A CN 102111112 A CN102111112 A CN 102111112A CN 2009103123873 A CN2009103123873 A CN 2009103123873A CN 200910312387 A CN200910312387 A CN 200910312387A CN 102111112 A CN102111112 A CN 102111112A
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Abstract
The invention relates to the technical field of communication, in particular to a radio frequency power amplifier, which comprises a linearity compensation circuit and an amplifier, wherein the linearity compensation circuit and the amplifier are connected together in a parallel connection mode, the linearity compensation circuit is composed of a first-stage radio frequency amplifier transistor and a bias circuit which enables the amplifier transistor to generate gain compression, and the radio frequency power amplifier is biased in an AB type state. The circuit for generating the linearization compensation of the invention increases the bias current of the transistor of the radio frequency amplifier along with the increase of the input power through the self-adaptive adjustment of the bias circuit, increases the gain of the transistor of the radio frequency amplifier under the condition of higher power input, thereby generating gain expansion, and can compensate the gain compression of the amplifier of the next stage by using the generated gain expansion through the parallel connection with the amplifier of the other stage, thereby improving the linearity of the power amplifier.
Description
Technical field
The present invention relates to communication technical field, be specifically related to a kind of radio-frequency power amplifier and front end transmitter.
Background technology
Along with the evolution of modern wireless telecommunications to the high-speed high capacity direction, the user improves constantly the requirement of broadband communications, and follow-on technology is also more and more harsher to the performance of radio frequency and microwave power amplifier.The Long Term Evolution project (LTE, LongTerm Evolution) of 3G no matter, still the IMT-Advanced technology of compatible TD-LTE all has similar technical characterstic to radio-frequency power amplifier, requires lower distorted signals, higher signal peak-to-average power power ratio.Signal for the higher high peak-to-average power ratio of distortionless transmission, power amplifier is except satisfying the launch requirements under the average power output, the linearity that also must guarantee PAPR dB on this power output basis is exported, and like this, could guarantee that peak signal transmits undistortedly.
But a problem of having to simultaneously face is, radio-frequency power amplifier is a nonlinear device in itself, can produce unwanted crosstalk product, and this can directly have influence on the quality of radiofrequency signal.The distortion that radio frequency amplifier is introduced will cause the distortion of amplifying signal on amplitude and phase place, input power is big more, its nonlinear characteristic is just obvious more, and after the modulation signal with certain bandwidth passes through power amplifier, can produce intermodulation component, cause spread spectrum, the neighboring trace signal be formed disturb, directly have influence on the error rate of receiving system, worsen the performance of communication system.
Summary of the invention
The object of the present invention is to provide a kind of radio-frequency power amplifier, significantly the linearity of bring to power amplifier.
Another object of the present invention is to provide a kind of front end transmitter that is applied in the wireless communication system.
In order to achieve the above object, the technical solution used in the present invention is: a kind of radio-frequency power amplifier, comprise linear compensating circuit and amplifier, and described linear compensating circuit and described amplifier link together by the form of parallel connection.
In the such scheme, described linear compensating circuit is by one-level radio frequency amplifier transistor and the biasing circuit of this amplifier transistor generation gain compression is constituted, and described radio-frequency power amplifier is biased in AB class state.
In the such scheme, the transistorized collector electrode of the radio frequency amplifier in the described linear compensating circuit links to each other with choke with the output of linear compensating circuit, and base stage is connected grounded emitter with the input of linear compensating circuit.
In the such scheme, described biasing circuit is made of transistor (Q2), diode (D1), diode (D2) and resistance (R1); Be connected by resistance (R1) between the collector electrode of described transistor (Q2) and the base stage; The base stage of transistor (Q2) is by diode in series (D1) and diode (D2) ground connection, and the positive pole of diode (D1) is connected with the base stage of transistor (Q2), and the negative pole of diode (D2) is connected with ground; The emitter of transistor (Q2) is connected with the input of linear compensating circuit.
In the such scheme, the biasing circuit in the described linear compensating circuit is provided with one road coupling path, realizes the gain compression of linear compensation part.
A kind of front end transmitter, be applied in the wireless communication system, the multi-level radio-frequency power amplifier that comprises the cascade of connecting, the multi-level radio-frequency power amplifier of described series connection cascade, comprising linear compensating circuit and power amplifier, is the tandem cascade between described linear compensating circuit and the described power amplifier.
In the such scheme, described linear compensating circuit is by one-level radio frequency amplifier transistor and the biasing circuit of this amplifier transistor generation gain compression is constituted, and described power amplifier bias is at AB class state.
In the such scheme, the collector electrode of the radio frequency amplifier transistor (Q1) in the described linear compensating circuit links to each other with choke with the output of linear compensating circuit, and base stage is connected grounded emitter with the input of linear compensating circuit.
In the such scheme, described biasing circuit is made of transistor (Q2), diode (D1), diode (D2) and resistance (R1); Be connected by resistance (R1) between the collector electrode of described transistor (Q2) and the base stage; The base stage of transistor (Q2) is by diode in series (D1) and diode (D2) ground connection, and the positive pole of diode (D1) is connected with the base stage of transistor (Q2), and the negative pole of diode (D2) is connected with ground; The emitter of transistor (Q2) is connected with the input of linear compensating circuit.
In the such scheme, the biasing circuit in the described linear compensating circuit is provided with one road coupling path, realizes the gain compression of linear compensation part.
Compared with prior art, the beneficial effect of technical solution of the present invention generation is:
The present invention produces the circuit of linear compensation and is regulated by the self adaptation by biasing circuit, make the transistorized bias current of this grade radio frequency amplifier increase and increase along with input power, increase the gain of this radio frequency amplifier transistor under situation about importing than higher power, thereby producing gain expands, by with being connected in parallel of other one-level amplifier, can use the gain that is produced to expand and compensate back one-level Amplifier Gain compression, thus the linearity of raising power amplifier.
Description of drawings
The circuit diagram of a kind of radio-frequency power amplifier that Fig. 1 provides for the embodiment of the invention;
Fig. 2 is the circuit diagram of the linear compensating circuit in the embodiment of the invention;
The curve that Fig. 3 gain that to be linear compensating circuit shown in Figure 2 produced under the situation of radiofrequency signal input is expanded;
Fig. 4 is the curve that the power gain of conventional amplifier changes with input power;
Fig. 5 is the curve that the power output of conventional amplifier changes with input power;
Fig. 6 is the curve that the power gain of the radio-frequency power amplifier of employing embodiment of the invention proposition changes with input power;
Fig. 7 is the curve that the power output of the radio-frequency power amplifier of employing embodiment of the invention proposition changes with input power.
Embodiment
In embodiments of the present invention, a kind of implementation of radio-frequency power amplifier is provided, in this implementation, utilize adaptive bias circuit to make the one-level radio frequency amplifying circuit produce gain compression along with the increase of input power, compensate the gain compression that the amplifier of the other one-level that is connected in parallel produces along with the increase of input power, thereby improve the linearity of entire circuit.
Need to prove that under the situation of not conflicting, embodiment and the feature among the embodiment among the application can make up mutually.Describe the present invention below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
The radio-frequency power amplifier that the embodiment of the invention provides is mainly used in the front end transmitter in the wireless communication system, and auxiliary radio-frequency power amplifier will amplify through the signal after the up-conversion undistortedly, sends antenna to and launches.
As shown in Figure 1, the multi-level radio-frequency power amplifier of the series connection cascade of the embodiment of the invention comprises linear compensating circuit 101 and amplifier 102 two parts.Linear compensating circuit 101 is made of adaptive bias circuit 103 and radio frequency amplifier transistor 104.Adaptive bias circuit 103 is realized two functions at this, the one, and for radio frequency amplifier transistor 104 provides biasing, make it be biased in AB class state; The 2nd, when input power increases, regulate the voltage of bias point by detected power, thereby change the bias current of radio frequency amplifier transistor 104, make the transistorized electric current of this radio frequency amplifier increase along with the increase of input power, make the gain by the transistorized signal of this radio frequency amplifier increase, promptly produce gain and expand along with the increase of input power.Amplifier 102 is conventional power amplifier, under the situation of large-signal input, owing to itself nonlinear characteristic, will produce gain compression.In embodiments of the present invention, expand by the gain that linear compensating circuit 101 produces along with the increase of input power, with the gain compression that is produced with the increase of input power by amplifier 102, both offset, thereby improve the 1dB compression point of overall power amplifier output.
Now describe the linear compensating circuit 101 of the embodiment of the invention in detail.As shown in Figure 2, radio frequency amplifier transistor Q1 collector electrode links to each other with choke RFC with the output of linear compensating circuit, and base stage is connected grounded emitter with the input of linear compensating circuit.Transistor Q1 is biased in AB class state, and from the input receiving inputted signal of linear compensating circuit and produce an amplified output signal, the working point of this radio-frequency (RF) transistors Q1 is mainly by the direct current biasing I on the collector electrode
C1Determine.Choke RFC connects the collector electrode of DC source and radio-frequency (RF) transistors, stops radiofrequency signal to enter DC source.Transistor Q2, diode D1, D2 and resistance R 1 have constituted a biasing circuit 201, and the bias voltage of generation is
V
B1＝V
reg-I
BR-V
BE2
(1)
V
B1＝V
reg-I
BR-(V
BE2+ΔV
BE) (?2)
By (2) as can be known, the bias voltage that this moment, biasing circuit 201 was produced increases along with the increase of power output, therefore, and the dc bias current I of radio frequency amplifier transistor Q1
C1Also can increase along with the increase of input power, that is to say, the working point of radio frequency amplifier transistor Q1 can be moved along with the increase of input power, finally causes the power gain of signal under the situation of high power input to become big, promptly produces the gain swelling.By circuit shown in Figure 2 as can be seen, with conventional AB class power amplifier, increased a power coupling path relatively from diode D3 to transistor Q2.
The curve that Fig. 3 gain that to be circuit shown in Figure 2 produced under the situation of radiofrequency signal input is expanded, as seen from the figure, because the nonlinear characteristic of itself, the gain meeting of circuit finally presents downward trend along with the increase of signal, but owing to adopted adaptive bias circuit, make that the gain of signal can be subjected to the influence of input power and produce expansion in the process that input power increases.
Choosing conventional linearity of amplifier degree at this compares with the linearity effect of the radio-frequency power amplifier that adopts the embodiment of the invention.Fig. 4 is the curve that the power gain of the selected conventional amplifier of making comparisons of the embodiment of the invention changes with input power, and Fig. 5 is the curve that the power output of the selected conventional amplifier of the embodiment of the invention changes with input power.As seen from Figure 4, when input power reach-during the 2dBm left and right sides, whole power gain has descended about 1dB, has promptly reached the 1dB compression point.As shown in Figure 5, Ci Shi output 1dB compression point is 24.02dBm.
Fig. 6 is the curve that adopts the power gain of the radio-frequency power amplifier that the present invention proposes to change with input power, and Fig. 7 is the curve that adopts the power output of the radio-frequency power amplifier that the present invention proposes to change with input power.As seen from Figure 6, when input power reached the 2dBm left and right sides, whole power gain had descended about 1dB, had promptly reached the 1dB compression point, and as shown in Figure 7, the output 1dB compression point of this moment is up to 28.48dBm.Compare with the amplifier of traditional structure, the 1dB compression point has improved 4 more than the dB at least.
In sum, the radio-frequency power amplifier that provides by the embodiment of the invention, the 1dB compression point of bring to power output greatly, improve the linearity of radio-frequency power amplifier, linear compensating circuit and amplifier link together by the form that is connected in parallel, the circuit that wherein produces linear compensation is made of one-level radio frequency amplifier transistor and the biasing circuit that makes this amplifier transistor produce gain compression, self adaptation by biasing circuit is regulated, make the transistorized bias current of this grade radio frequency amplifier increase and increase along with input power, increase the gain of this radio frequency amplifier transistor under situation about importing than higher power, thereby producing gain expands, by with being connected in parallel of other one-level amplifier, can use the gain that is produced to expand and compensate back one-level Amplifier Gain compression, thus the 1dB compression point of raising power amplifier.
Obviously, it is apparent to those skilled in the art that above-mentioned each unit of the present invention, structure or part can realize with being integral ground element or member, also can realize by single element or member respectively.The present invention does not limit this.The progression of amplifier can be decided according to the actual requirements, and also can select multistage linear compensation structure for use, be not limited at this above-mentioned, as long as can finish purpose of the present invention.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. radio-frequency power amplifier is characterized in that: comprise linear compensating circuit and amplifier, between described linear compensating circuit and the described amplifier for being connected in parallel.
2. radio-frequency power amplifier as claimed in claim 1, it is characterized in that: described linear compensating circuit is by one-level radio frequency amplifier transistor and the biasing circuit of this amplifier transistor generation gain compression is constituted, and described radio-frequency power amplifier is biased in AB class state.
3. radio-frequency power amplifier as claimed in claim 2, it is characterized in that: the transistorized collector electrode of the radio frequency amplifier in the described linear compensating circuit links to each other with choke with the output of linear compensating circuit, base stage is connected grounded emitter with the input of linear compensating circuit.
4. radio-frequency power amplifier as claimed in claim 2 is characterized in that: described biasing circuit is made of transistor (Q2), diode (D1), diode (D2) and resistance (R1); Be connected by resistance (R1) between the collector electrode of described transistor (Q2) and the base stage; The base stage of transistor (Q2) is by diode in series (D1) and diode (D2) ground connection, and the positive pole of diode (D1) is connected with the base stage of transistor (Q2), and the negative pole of diode (D2) is connected with ground; The emitter of transistor (Q2) is connected with the input of linear compensating circuit.
5. radio-frequency power amplifier as claimed in claim 4 is characterized in that: the biasing circuit in the described linear compensating circuit is provided with one road coupling path, realizes the gain compression of linear compensation part.
6. front end transmitter, be applied in the wireless communication system, it is characterized in that: the multi-level radio-frequency power amplifier that comprises the cascade of connecting, the multi-level radio-frequency power amplifier of described series connection cascade, comprising linear compensating circuit and power amplifier, is the tandem cascade between described linear compensating circuit and the described power amplifier.
7. front end transmitter as claimed in claim 6 is characterized in that: described linear compensating circuit is by one-level radio frequency amplifier transistor and the biasing circuit of this amplifier transistor generation gain compression is constituted, and described power amplifier bias is at AB class state.
8. front end transmitter as claimed in claim 7, it is characterized in that: the collector electrode of the radio frequency amplifier transistor (Q1) in the described linear compensating circuit links to each other with choke with the output of linear compensating circuit, base stage is connected grounded emitter with the input of linear compensating circuit.
9. front end transmitter as claimed in claim 7 is characterized in that: described biasing circuit is made of transistor (Q2), diode (D1), diode (D2) and resistance (R1); Be connected by resistance (R1) between the collector electrode of described transistor (Q2) and the base stage; The base stage of transistor (Q2) is by diode in series (D1) and diode (D2) ground connection, and the positive pole of diode (D1) is connected with the base stage of transistor (Q2), and the negative pole of diode (D2) is connected with ground; The emitter of transistor (Q2) is connected with the input of linear compensating circuit.
10. front end transmitter as claimed in claim 9 is characterized in that: the biasing circuit in the described linear compensating circuit is provided with one road coupling path, realizes the gain compression of linear compensation part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910312387 CN102111112B (en) | 2009-12-28 | 2009-12-28 | Radio frequency power amplifier and front-end transmitter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910312387 CN102111112B (en) | 2009-12-28 | 2009-12-28 | Radio frequency power amplifier and front-end transmitter |
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| CN102111112A true CN102111112A (en) | 2011-06-29 |
| CN102111112B CN102111112B (en) | 2013-03-20 |
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| CN 200910312387 Active CN102111112B (en) | 2009-12-28 | 2009-12-28 | Radio frequency power amplifier and front-end transmitter |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715997A (en) * | 2013-12-20 | 2014-04-09 | 惠州市正源微电子有限公司 | Circuit capable of improving linearity of power amplifier |
| WO2016078618A1 (en) * | 2014-11-20 | 2016-05-26 | 北京芯麒电子技术有限公司 | Power control method, device and communication terminal for radio frequency power amplifier |
| CN106612106A (en) * | 2015-10-27 | 2017-05-03 | 湖南格兰德芯微电子有限公司 | Composite transistor radio frequency power amplifier |
| CN109818587A (en) * | 2017-11-21 | 2019-05-28 | 锐迪科微电子科技（上海）有限公司 | A kind of adaptive-biased radio-frequency power amplifier |
| CN110098806A (en) * | 2019-04-25 | 2019-08-06 | 河源广工大协同创新研究院 | A kind of adaptive linear radio-frequency bias circuit |
| US20210062344A1 (en) * | 2018-05-18 | 2021-03-04 | Henkel Ag & Co. Kgaa | Passivation composition based on trivalent chromium |
| CN113346848A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101521486A (en) * | 2008-02-27 | 2009-09-02 | 中国科学院微电子研究所 | Power Amplifier Bias Circuit |
| CN102111113B (en) * | 2009-12-28 | 2012-09-26 | 中国科学院微电子研究所 | Cascaded multistage radio frequency power amplifier and front-end transmitter in series |
-
2009
- 2009-12-28 CN CN 200910312387 patent/CN102111112B/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715997A (en) * | 2013-12-20 | 2014-04-09 | 惠州市正源微电子有限公司 | Circuit capable of improving linearity of power amplifier |
| CN103715997B (en) * | 2013-12-20 | 2017-06-13 | 惠州市正源微电子有限公司 | A kind of circuit for improving power amplifier linearity |
| WO2016078618A1 (en) * | 2014-11-20 | 2016-05-26 | 北京芯麒电子技术有限公司 | Power control method, device and communication terminal for radio frequency power amplifier |
| US10396717B2 (en) | 2014-11-20 | 2019-08-27 | Beijing Vanchip Technologies Co., Ltd. | Power control method, device and communication terminal for radio frequency power amplifier |
| CN106612106A (en) * | 2015-10-27 | 2017-05-03 | 湖南格兰德芯微电子有限公司 | Composite transistor radio frequency power amplifier |
| CN109818587A (en) * | 2017-11-21 | 2019-05-28 | 锐迪科微电子科技（上海）有限公司 | A kind of adaptive-biased radio-frequency power amplifier |
| CN109818587B (en) * | 2017-11-21 | 2024-02-27 | 锐迪科微电子科技（上海）有限公司 | Self-adaptive bias radio frequency power amplifier |
| US20210062344A1 (en) * | 2018-05-18 | 2021-03-04 | Henkel Ag & Co. Kgaa | Passivation composition based on trivalent chromium |
| CN110098806A (en) * | 2019-04-25 | 2019-08-06 | 河源广工大协同创新研究院 | A kind of adaptive linear radio-frequency bias circuit |
| CN110098806B (en) * | 2019-04-25 | 2023-03-10 | 河源广工大协同创新研究院 | Self-adaptive linear radio frequency bias circuit |
| CN113346848A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit |
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Effective date of registration: 20220817 Address after: Room 108, floor 1, building 4, No. 2 dacuodeng Hutong, Dongcheng District, Beijing 100010 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: Beijing city Chaoyang District North Tucheng Road 100029 Beijing City No. 3 Institute of Microelectronics Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |