CN110098806B - Self-adaptive linear radio frequency bias circuit - Google Patents
Self-adaptive linear radio frequency bias circuit Download PDFInfo
- Publication number
- CN110098806B CN110098806B CN201910340074.2A CN201910340074A CN110098806B CN 110098806 B CN110098806 B CN 110098806B CN 201910340074 A CN201910340074 A CN 201910340074A CN 110098806 B CN110098806 B CN 110098806B
- Authority
- CN
- China
- Prior art keywords
- bipolar transistor
- heterojunction bipolar
- resistor
- bias circuit
- radio frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G2201/00—Indexing scheme relating to subclass H03G
- H03G2201/40—Combined gain and bias control
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0425—Circuits with power amplifiers with linearisation using predistortion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a self-adaptive linearization radio frequency bias circuit, which comprises a linearization bias circuit and a radio frequency amplifier unit circuit; the linearization bias circuit is connected with the radio frequency amplifier unit circuit through a self-adaptive linearity compensation circuit; the linear bias circuit comprises a heterojunction bipolar transistor HBT2, a heterojunction bipolar transistor HBT3, a heterojunction bipolar transistor HBT4, a resistor R3, a resistor R4, a resistor R5 and a capacitor C2; the collector of the heterojunction bipolar transistor HBT4 is connected with the port of the linearized bias circuit; according to the invention, the self-adaptive linear compensation is realized through the feedback of the heterojunction bipolar transistor HBT4 of the self-adaptive linear compensation circuit, the heterojunction bipolar transistor HBT0 can select a bias state according to the output power, and the power amplifier improves the linearity while giving consideration to the efficiency; the gain compression and phase distortion characteristics of the HBT can be effectively improved; simple structure, small size and low cost, and is suitable for the design of MMIC power amplifier.
Description
Technical Field
The invention relates to the technical field of communication, in particular to an adaptive linearization radio frequency bias circuit.
Background
The rapid development of wireless communication technology, especially the development of green wireless communication, has put increasing demands on the performance index of communication systems. As an important component in communication systems, the linearity of the power amplifier is particularly important in the system. Therefore, how to better improve the linearity of the power amplifier is a research hotspot in the field of power amplifiers. One way to improve linearity is to improve rf bias techniques.
Conventionally, a bias point and a load line of a power amplifier are both designed according to the optimal 1dB compression point (P1 dB), and the power amplifier has the highest efficiency when the output power is the maximum. However, since the power amplifier often works in a non-maximum output power state, in order to improve the average efficiency of the power amplifier, the power amplifier is required to have high efficiency in a wide working range. For Monolithic Microwave Integrated Circuit (MMIC) power amplifiers of HBTs, in order to obtain a good compromise between efficiency and linearity, an important method is to make the bias point of the HBT change with the input signal power, i.e. operate in a dynamic class a state, and refer to this biasing technique as adaptive linearization biasing. Many documents have studied such biasing techniques separately.
A conventional bipolar transistor bias circuit generally consists of two resistors connected in series to divide the voltage, as shown in fig. 2. As the input power increases, the RF voltage and current signals applied to HBT0 (HBT 0 refers to the strip output stage power transistor in the following description) bjt are limited in magnitude by the clamping characteristics of the diode, causing large positive voltage and negative current to be limited. The average dc current Irec rectified by the bjt will increase with the increase of the input power, and the voltage VBE across the bjt will decrease by Δ VBE, and the bias point will move from S to L1, as shown in fig. 3. This will result in reduced transconductance, reduced gain and phase distortion. To compensate for gain compression and phase distortion under large signal conditions, the large signal transconductance must be kept coincident with the small signal transconductance, and therefore the bias point should be moved from L1 to L2. One way to effectively shift the bias point is to enable the bias circuit to provide the compensation current Icom and the compensation voltage avbe. One way to achieve this compensation is an adaptive linearization bias technique. The invention provides a self-adaptive linear bias circuit which is suitable for HBT MMIC process, has small size and low cost,
disclosure of Invention
The invention aims to provide a self-adaptive linearization radio frequency bias circuit which is simple in structure, small in size, low in cost and suitable for MMIC power amplifier design.
The invention is realized by the following technical scheme:
an adaptive linearization radio frequency bias circuit comprises a linearization bias circuit and a radio frequency amplifier unit circuit; wherein: the linearization bias circuit is connected with the radio frequency amplifier unit circuit through a self-adaptive linearity compensation circuit; the self-adaptive linear compensation circuit adjusts the bias voltage of the power amplifier unit according to the change of the input signal power; the linearization bias circuit comprises a heterojunction bipolar transistor HBT2, a heterojunction bipolar transistor HBT3, a heterojunction bipolar transistor HBT4, a resistor R3, a resistor R4, a resistor R5 and a capacitor C2; the collector of the heterojunction bipolar transistor HBT4 is connected with the port of the linear bias circuit; and the base electrode of the heterojunction bipolar transistor HBT2 is connected with the base electrode of the heterojunction bipolar transistor HBT3 in parallel and then is connected with the port of the linear bias circuit through a resistor R3.
Furthermore, one end of the capacitor C2 is connected to the resistor R5 and the base of the heterojunction bipolar transistor HBT1, and the other end is grounded.
Further, the emitters of the heterojunction bipolar transistor HBT2, the heterojunction bipolar transistor HBT3 and the heterojunction bipolar transistor HBT4 are respectively grounded.
Further, the resistor R4 and the resistor R5 are connected in parallel and then connected to the collectors of the heterojunction bipolar transistor HBT3 and the heterojunction bipolar transistor HBT4, respectively.
Further, the linearization bias circuit comprises a resistor R2, a base-emitter diode of the heterojunction bipolar transistor HBT1 and a capacitor C1; one end of the capacitor C1 is connected with the base electrode of the heterojunction bipolar transistor HBT1, and the other end of the capacitor C1 is grounded; an emitter of the heterojunction bipolar transistor HBT1 is connected with one end of the resistor R2, and the other end of the resistor R2 is connected with a circuit port of the radio-frequency amplifier unit.
Further, the collector of the heterojunction bipolar transistor HBT1 is connected to the negative electrode of the power supply through a resistor R1.
Further, the radio frequency amplifier unit circuit comprises a heterojunction bipolar transistor HBT0; the base electrode of the heterojunction bipolar transistor HBT0 is connected with the radio frequency signal input port through a capacitor; and the collector electrode of the heterojunction bipolar transistor HBT0 is respectively connected with the radio-frequency signal output port and the inductor.
The invention has the beneficial effects that:
according to the invention, the self-adaptive linear compensation is realized through the feedback of the heterojunction bipolar transistor HBT4 of the self-adaptive linear compensation circuit, the heterojunction bipolar transistor HBT0 can select a bias state according to the output power, so that the circuit can meet the linear requirement, the efficiency at low output power can be improved, and the power amplifier improves the linearity while giving consideration to the efficiency; the gain compression and phase distortion characteristics of the HBT can be effectively improved; the linearization bias circuit automatically tracks input power changes while improving efficiency at low output power and linearity at high output power. The self-adaptive linearization biasing circuit has the advantages of simple structure, small size and low cost, and is suitable for the design of MMIC power amplifiers.
Drawings
FIG. 1 is a schematic diagram of an adaptive linearization RF bias circuit according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a conventional resistor-divider bias circuit;
FIG. 3 is a schematic diagram of bias point movement;
wherein: 100-linear bias circuit, 200-radio frequency amplifier unit circuit and 300-adaptive linear compensation circuit.
Detailed Description
The invention will be described in detail with reference to the drawings and specific embodiments, which are illustrative of the invention and are not to be construed as limiting the invention.
As shown in fig. 1, an adaptive linearization rf bias circuit includes a linearization bias circuit 100 and an rf amplifier unit circuit 200; wherein: the linearization bias circuit 100 is connected with the radio frequency amplifier unit circuit 200 through an adaptive linearity compensation circuit 300; the adaptive linear compensation circuit 300 adjusts the bias voltage of the power amplifier unit according to the change of the input signal power; the linearization bias circuit 100 comprises a heterojunction bipolar transistor HBT2, a heterojunction bipolar transistor HBT3, a heterojunction bipolar transistor HBT4, a resistor R3, a resistor R4, a resistor R5 and a capacitor C2; the collector of the heterojunction bipolar transistor HBT4 is connected with the port of the linearization bias circuit 100; the base electrode of the heterojunction bipolar transistor HBT2 is connected with the base electrode of the heterojunction bipolar transistor HBT3 in parallel and then is connected with the port of the linearization bias circuit 100 through a resistor R3.
Specifically, in the solution of this embodiment, one end of the capacitor C2 is connected to the resistor R5 and the base of the heterojunction bipolar transistor HBT1, and the other end is grounded.
Specifically, in the solution of this embodiment, the emitters of the heterojunction bipolar transistor HBT2, the heterojunction bipolar transistor HBT3, and the heterojunction bipolar transistor HBT4 are grounded, respectively.
Specifically, in the solution of this embodiment, the resistor R4 is connected in parallel with the resistor R5 and then is connected to the collectors of the heterojunction bipolar transistor HBT3 and the heterojunction bipolar transistor HBT4 respectively.
Specifically, in this embodiment, the linearized bias circuit 100 includes a resistor R2, a base-emitter diode of the heterojunction bipolar transistor HBT1, and a capacitor C1; one end of the capacitor C1 is connected with the base electrode of the heterojunction bipolar transistor HBT1, and the other end of the capacitor C1 is grounded; an emitter of the heterojunction bipolar transistor HBT1 is connected with one end of the resistor R2, and the other end of the resistor R2 is connected with a port of the radio frequency amplifier unit circuit 200.
Specifically, in the solution of this embodiment, the collector of the heterojunction bipolar transistor HBT1 is connected to the negative electrode of the power supply through a resistor R1.
Specifically, in this embodiment, the radio frequency amplifier unit circuit 200 includes a heterojunction bipolar transistor HBT0; the base electrode of the heterojunction bipolar transistor HBT0 is connected with the radio frequency signal input port through a capacitor; and the collector electrode of the heterojunction bipolar transistor HBT0 is respectively connected with the radio-frequency signal output port and the inductor.
As will be further described with respect to the present embodiment,
the working principle is as follows:
the linearization bias circuit 100 mainly comprises a resistor R2, a base-emitter diode of the heterojunction bipolar transistor HBT1 and a capacitor C1, and when an input RF signal is increased, vb0 is reduced due to the rectification characteristic of the base-emitter diode of the heterojunction bipolar transistor HBT0; the RF signal leaked to the linearization bias circuit 100 is short-circuited to the ground through the capacitor C1, and due to the rectification characteristic of the heterojunction bipolar transistor HBT1 base-emitter diode, the base-emitter voltage Vbe1 is reduced, so that the base-emitter voltage Vb0 of the heterojunction bipolar transistor HBT0 is compensated, and the heterojunction bipolar transistor HBT0 can still maintain a sufficient bias voltage in a high power state, thereby suppressing gain compression.
A part of the signal leaked from the radio frequency amplifier cell circuit 200 to the linearizer bias circuit 100 is shunted to the heterojunction bipolar transistor HBT2 and the heterojunction bipolar transistor HBT3 respectively,
thus, I m ＝I c2 +I c3 +I b4 ＝βI b2 +βI b3 +I b4 So that Ib2 and Ib3Increase, thereby causing Im to increase due to V b4 ＝V ref -I m R 4 Therefore, vb4 is decreased, resulting in an increase of Vb1, and adaptive linear compensation is realized.
There will be a leakage of part of the rf signal, which will short circuit from the capacitor C2 to ground. The linearization bias circuit automatically tracks input power changes while improving efficiency at low output power and linearity at high output power. The self-adaptive linearized bias circuit has the advantages of simple structure, small size and low cost, and is suitable for the design of MMIC power amplifiers.
The technical solutions provided by the embodiments of the present invention are described in detail above, and specific examples are applied herein to explain the principles and embodiments of the present invention, and the descriptions of the embodiments above are only used to help understanding the principles of the embodiments of the present invention; meanwhile, for a person skilled in the art, according to the embodiments of the present invention, there may be variations in the specific implementation manners and application ranges, and in summary, the content of the present description should not be construed as a limitation to the present invention.
Claims (1)
1. An adaptive linearization radio frequency bias circuit comprises a linearization bias circuit and a radio frequency amplifier unit circuit; the method is characterized in that: the linearization bias circuit is connected with the radio frequency amplifier unit circuit through a self-adaptive linearity compensation circuit; the self-adaptive linear compensation circuit adjusts the bias voltage of the power amplifier unit according to the change of the power of the input signal; the linearization bias circuit comprises a heterojunction bipolar transistor HBT2, a heterojunction bipolar transistor HBT3, a heterojunction bipolar transistor HBT4, a resistor R3, a resistor R4, a resistor R5 and a capacitor C2; the collector of the heterojunction bipolar transistor HBT4 is connected with the port of the linear bias circuit; the base electrode of the heterojunction bipolar transistor HBT2 is connected with the base electrode of the heterojunction bipolar transistor HBT3 in parallel and then is connected with the port of the linear bias circuit through a resistor R3; one end of the capacitor C2 is respectively connected with the resistor R5 and the base electrode of the heterojunction bipolar transistor HBT1, and the other end of the capacitor C is grounded; the emitters of the heterojunction bipolar transistor HBT2, the heterojunction bipolar transistor HBT3 and the heterojunction bipolar transistor HBT4 are respectively grounded; the resistor R4 and the resistor R5 are connected in parallel and then are respectively connected with the collectors of the heterojunction bipolar transistor HBT3 and the heterojunction bipolar transistor HBT 4; the linearization bias circuit comprises a resistor R2, a base-emitter junction diode of the heterojunction bipolar transistor HBT1 and a capacitor C1; one end of the capacitor C1 is connected with the base electrode of the heterojunction bipolar transistor HBT1, and the other end of the capacitor C1 is grounded; an emitter of the heterojunction bipolar transistor HBT1 is connected with one end of the resistor R2, and the other end of the resistor R2 is connected with a circuit port of the radio frequency amplifier unit; the collector electrode of the heterojunction bipolar transistor HBT1 is connected with the negative electrode of the power supply through a resistor R1; the radio frequency amplifier unit circuit comprises a heterojunction bipolar transistor HBT0; the base electrode of the heterojunction bipolar transistor HBT0 is connected with the radio frequency signal input port through a capacitor; and the collector electrode of the heterojunction bipolar transistor HBT0 is respectively connected with the radio-frequency signal output port and the inductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910340074.2A CN110098806B (en) | 2019-04-25 | 2019-04-25 | Self-adaptive linear radio frequency bias circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910340074.2A CN110098806B (en) | 2019-04-25 | 2019-04-25 | Self-adaptive linear radio frequency bias circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110098806A CN110098806A (en) | 2019-08-06 |
| CN110098806B true CN110098806B (en) | 2023-03-10 |
Family
ID=67445934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910340074.2A Active CN110098806B (en) | 2019-04-25 | 2019-04-25 | Self-adaptive linear radio frequency bias circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110098806B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111147033A (en) * | 2020-01-02 | 2020-05-12 | 尚睿微电子（上海）有限公司 | Power amplifier and electronic equipment based on HBT circuit structure |
| CN112398448B (en) * | 2020-10-30 | 2021-08-17 | 锐石创芯（深圳）科技有限公司 | Radio frequency differential amplification circuit and radio frequency module |
| CN112564643B (en) * | 2020-12-08 | 2023-07-25 | 广东工业大学 | Self-adaptive radio frequency bias circuit |
| CN113489461A (en) * | 2021-07-28 | 2021-10-08 | 电子科技大学 | Radio frequency predistortion linearizer and radio frequency power amplifier |
| CN114944819B (en) | 2022-05-16 | 2023-02-10 | 广东工业大学 | Bias circuit for radio frequency power amplifier |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046642A (en) * | 1998-09-08 | 2000-04-04 | Motorola, Inc. | Amplifier with active bias compensation and method for adjusting quiescent current |
| US6313705B1 (en) * | 1999-12-20 | 2001-11-06 | Rf Micro Devices, Inc. | Bias network for high efficiency RF linear power amplifier |
| CN102111112A (en) * | 2009-12-28 | 2011-06-29 | 中国科学院微电子研究所 | Radio-frequency power amplifier and a front-end transmitter |
| CN105763164A (en) * | 2014-12-16 | 2016-07-13 | 沈阳中科微电子有限公司 | Radio frequency power amplifier circuit |
| CN105808851A (en) * | 2016-03-09 | 2016-07-27 | 西安电子科技大学 | InP heterojunction bipolar transistor circuit based on backward bias compensation |
| WO2017107949A1 (en) * | 2015-12-22 | 2017-06-29 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensation circuit and communication terminal |
| US10141892B1 (en) * | 2017-07-31 | 2018-11-27 | Rafael Microelectronics, Inc. | Bias circuit for supplying a bias current to a RF power amplifier |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004194063A (en) * | 2002-12-12 | 2004-07-08 | Renesas Technology Corp | High-frequency power amplifier and communication apparatus using the same |
| US7893771B2 (en) * | 2007-01-05 | 2011-02-22 | City University Of Hong Kong | Wideband linearization and adaptive power management for microwave power amplifiers |
| JP4685836B2 (en) * | 2007-05-28 | 2011-05-18 | パナソニック株式会社 | High frequency power amplifier |
-
2019
- 2019-04-25 CN CN201910340074.2A patent/CN110098806B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046642A (en) * | 1998-09-08 | 2000-04-04 | Motorola, Inc. | Amplifier with active bias compensation and method for adjusting quiescent current |
| US6313705B1 (en) * | 1999-12-20 | 2001-11-06 | Rf Micro Devices, Inc. | Bias network for high efficiency RF linear power amplifier |
| CN102111112A (en) * | 2009-12-28 | 2011-06-29 | 中国科学院微电子研究所 | Radio-frequency power amplifier and a front-end transmitter |
| CN105763164A (en) * | 2014-12-16 | 2016-07-13 | 沈阳中科微电子有限公司 | Radio frequency power amplifier circuit |
| WO2017107949A1 (en) * | 2015-12-22 | 2017-06-29 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensation circuit and communication terminal |
| CN105808851A (en) * | 2016-03-09 | 2016-07-27 | 西安电子科技大学 | InP heterojunction bipolar transistor circuit based on backward bias compensation |
| US10141892B1 (en) * | 2017-07-31 | 2018-11-27 | Rafael Microelectronics, Inc. | Bias circuit for supplying a bias current to a RF power amplifier |
Non-Patent Citations (4)
| Title |
|---|
| "A linear InGaP/GaAs HBT power amplifier for LTE B7 applications";Hui Dong Lee等;《2017 International SoC Design Conference (ISOCC)》;20180531;第234-235页 * |
| "CMOS射频功率放大器高效率和高线性度研究进展";林俊明等;《电子技术应用》;20151130;第41卷(第11期);第17-23页 * |
| "HBT MMIC功率放大器的自适应线性化偏置技术";彭艳军等;《中国集成电路》;20061130(第90期);第32-37页 * |
| "一种带有温度补偿电路的射频功率放大器";黄亮等;《电子科技大学学报》;20150630;第44卷(第6期);第814-817页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110098806A (en) | 2019-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110098806B (en) | Self-adaptive linear radio frequency bias circuit | |
| CN110176923B (en) | Self-adaptive linear radio frequency bias module and using circuit thereof | |
| CN113114121B (en) | Bias circuit for radio frequency power amplifier | |
| WO2017107949A1 (en) | Method for improving linearity of radio frequency power amplifier, compensation circuit and communication terminal | |
| JP3631060B2 (en) | Linear amplifier and radio communication apparatus using the same | |
| US11545944B2 (en) | Power amplifier circuit | |
| CN114567270B (en) | Low-cost linear power amplifier | |
| US11646704B2 (en) | Power amplifier circuit | |
| CN111756335B (en) | Radio frequency gain module amplifier chip | |
| CN116073770B (en) | HBT power amplifier and electronic equipment | |
| CN216904823U (en) | Radio frequency power amplifier and linearization bias circuit of GaAs-based HBT (heterojunction Bipolar transistor) process MMIC (monolithic microwave Integrated Circuit) mobile phone | |
| CN112543004A (en) | Linear bias circuit and radio frequency power amplifier | |
| US20220060157A1 (en) | Radio-frequency amplifier circuit | |
| CN212518921U (en) | High-gain power amplifier chip with harmonic suppression | |
| CN113437945A (en) | Power amplifier and control method | |
| CN212163282U (en) | Linear compensation power amplifier | |
| CN204156827U (en) | A kind of wideband power amplifer chip for radar system and amplifier | |
| CN115395905A (en) | Power amplifier bias circuit, power amplification circuit and communication equipment | |
| US10879847B2 (en) | Transmission unit | |
| LU501118B1 (en) | Adaptive linearizing radio frequency bias module and using method thereof | |
| CN111262534A (en) | Self-adaptive bias circuit for power amplifier chip | |
| KR100591062B1 (en) | Linear power amplifier for predistortion by using reverse diode | |
| CN211791445U (en) | Self-adaptive bias circuit for power amplifier chip | |
| CN116667798B (en) | Radio frequency power amplifying circuit and radio frequency chip | |
| CN219514047U (en) | Radio frequency power amplifier and radio frequency power amplifier module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |