CN112564643B - Self-adaptive radio frequency bias circuit - Google Patents
Self-adaptive radio frequency bias circuit Download PDFInfo
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- CN112564643B CN112564643B CN202011422638.6A CN202011422638A CN112564643B CN 112564643 B CN112564643 B CN 112564643B CN 202011422638 A CN202011422638 A CN 202011422638A CN 112564643 B CN112564643 B CN 112564643B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The application discloses a self-adaptive radio frequency bias circuit, which inhibits emitter voltage reduction of a first transistor (Q1) through a direct current negative feedback compensation module, so that bias current of a power tube (Q0) is stabilized; meanwhile, the second transistor (Q2), the third transistor (Q3), the second resistor (R2) and the third resistor (R3) form a module with a temperature compensation function, and when the temperature rises, the module is used for stabilizing the bias current of the power tube (Q0); and based on the direct current negative feedback compensation module, the linearization compensation module can stabilize the bias voltage of the power tube (Q0), thereby solving the technical problems that the existing active bias technology can not effectively provide stable bias voltage or current and the thermal stability and linearity of the power tube are poor.
Description
Technical Field
The present application relates to the field of radio frequency integrated circuits, and in particular, to a self-adaptive radio frequency bias circuit.
Background
A power amplifier is one of the key components of a wireless communication system, and functions to linearly amplify a modulated signal and radiate the modulated signal through an antenna, so as to ensure that the modulated signal can be received and demodulated in a certain area. With the rapid development of communication technology, the modulation mode is more complex, and the market has more stringent requirements on the output power and linearity of the power amplifier.
In a wireless transmitter of a mobile phone or a router, a GaAsHBT process is generally adopted to design a power amplifier, however, due to the base-emitter junction rectification characteristic of the HBT, bias voltage or current drift occurs to a power tube along with the increase of input power, and finally, the linearity of the power amplifier is reduced; and because the GaAs heat conductivity is lower than that of Si material, the temperature of the power tube can be obviously increased in the actual operation, so that the temperature compensation of the power amplifier is required. In order to solve the problem of drift of the base-emitter junction bias point of the GaAs HBT process power tube, a bias circuit is required to provide stable bias voltage or current for the power tube of the power amplifier, and meanwhile, the transistor parameters are inhibited from being influenced by temperature change, so that constant working characteristics are maintained.
At present, the main technology is an active bias technology, as shown in fig. 2, although the active bias technology can theoretically adjust bias current by adjusting the resistance value of the current limiting resistor R1; meanwhile, the base bias voltage drop of the power tube Q0 is compensated by utilizing the Q1 base-emitter diode and the linearization capacitor, and the base bias voltage of the power tube Q0 is kept constant; and the Q2 and Q3 and the current limiting resistor R1 which are connected through the diode can play a role of temperature compensation, but the parameters of Q0, Q1, Q2 and Q3 are required to be completely consistent, and the temperature environment is consistent. However, in practical application, the above conditions are obviously difficult to achieve, so that the existing active bias technology cannot effectively provide stable bias voltage or current in practical application, and the thermal stability and linearity of the power tube are poor.
Disclosure of Invention
The purpose of the application is to provide a self-adaptive radio frequency bias circuit, which is used for solving the technical problems that the existing active bias technology can not effectively provide stable bias voltage or current, so that the thermal stability and linearity of a power tube are poor.
In view of this, the present application provides an adaptive radio frequency bias circuit comprising: the direct current negative feedback compensation module, the linearization compensation module, the temperature compensation module and the blocking capacitor (C0);
the linearization compensation module includes: a first transistor (Q1), a first capacitor (C1);
the direct current negative feedback compensation module comprises: a second transistor (Q2), a third transistor (Q3), a first resistor (R1), a second resistor (R2), a third resistor (R3), and a second capacitor (C2);
one end of the third resistor (R3) is respectively connected with the collector of the third transistor (Q3), one end of the first capacitor (C1) and the base of the first transistor (Q1), the emitter of the third transistor (Q3) is connected with the collector of the second transistor (Q2), the base of the second transistor (Q2) is respectively connected with one end of the first resistor (R1) and one end of the second capacitor (C2), and the emitter of the second transistor (Q2) is connected with one end of the second resistor (R2);
the base electrode of the third transistor (Q3) is respectively connected with one end of the first capacitor (C1) and the base electrode of the first transistor (Q1), and the emitter electrode of the first transistor (Q1) is respectively connected with the other end of the first resistor (R1), one end of the blocking capacitor (C0) and the base electrode of the power tube (Q0).
Optionally, the method further comprises: a ballast resistor (R0);
one end of the ballast resistor (R0) is respectively connected with the other end of the first resistor (R1) and the emitter of the first transistor (Q1), and the other end of the ballast resistor is respectively connected with one end of the blocking capacitor (C0) and the base of the power tube (Q0).
Optionally, the method further comprises: a radio frequency choke coil (Lc);
one end of the radio frequency choke coil is connected with the collector electrode of the power tube (Q0).
Optionally, the other end of the third resistor (R3) is connected to a reference voltage;
the collector of the first transistor (Q1) and the other end of the radio frequency choke coil (Lc) are connected to a supply voltage;
the other end of the first capacitor (C1), the other end of the second resistor (R2), the other end of the second capacitor (C2) and the emitter of the power tube (Q0) are grounded;
the other end of the blocking capacitor (C0) is connected with an input signal.
Optionally, the first transistor (Q1), the second transistor (Q2), and the third transistor (Q3) are HBT transistors.
Optionally, the first transistor (Q1), the second transistor (Q2), the third transistor (Q3) are transistors.
Compared with the prior art, the embodiment of the application has the advantages that:
in an embodiment of the present application, there is provided an adaptive radio frequency bias circuit, including: the direct current negative feedback compensation module, the linearization compensation module, the temperature compensation module and the blocking capacitor (C0); the linearization compensation module includes: a first transistor (Q1), a first capacitor (C1); the direct current negative feedback compensation module comprises: a second transistor (Q2), a third transistor (Q3), a first resistor (R1), a second resistor (R2), a third resistor (R3), and a second capacitor (C2); one end of a third resistor (R3) is respectively connected with a collector electrode of a third transistor (Q3), one end of a first capacitor (C1) and a base electrode of the first transistor (Q1), an emitter electrode of the third transistor (Q3) is connected with a collector electrode of a second transistor (Q2), a base electrode of the second transistor (Q2) is respectively connected with one end of the first resistor (R1) and one end of the second capacitor (C2), and an emitter electrode of the second transistor (Q2) is connected with one end of the second resistor (R2); the base electrode of the third transistor (Q3) is respectively connected with one end of the first capacitor (C1) and the base electrode of the first transistor (Q1), and the emitter electrode of the first transistor (Q1) is respectively connected with the other end of the first resistor (R1), one end of the blocking capacitor (C0) and the base electrode of the power tube (Q0).
According to the self-adaptive radio frequency bias circuit, the emitter voltage of the first transistor (Q1) is restrained from being reduced through the direct-current negative feedback compensation module, so that the bias current of the power tube (Q0) is stabilized; meanwhile, the second transistor (Q2), the third transistor (Q3), the second resistor (R2) and the third resistor (R3) form a module with a temperature compensation function, and when the temperature rises, the module is used for stabilizing the bias current of the power tube (Q0); and based on the direct current negative feedback compensation module, the linearization compensation module can stabilize the bias voltage of the power tube (Q0), so that the thermal stability and linearity of the power tube (Q0) are improved, and the technical problem that the conventional active bias technology cannot effectively provide stable bias voltage or current, so that the thermal stability and linearity of the power tube are poor is solved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an adaptive rf bias circuit according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a conventional active bias circuit;
FIG. 3 is a schematic diagram showing the effect of a ballast resistor (R0) in an adaptive RF bias circuit according to an embodiment of the present application on the base potential of a power transistor (Q0) as a function of input power;
FIG. 4 is a schematic diagram showing the comparison of the effect of the adaptive RF bias circuit and the prior active bias circuit on the power transistor (Q0) base-emitter junction voltage compensation;
fig. 5 is a schematic diagram illustrating a compensation effect of a temperature compensation module in the adaptive rf bias circuit according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an adaptive rf bias circuit according to an embodiment of the present disclosure.
An adaptive radio frequency bias circuit provided in an embodiment of the present application includes: the direct current negative feedback compensation module, the linearization compensation module, the temperature compensation module and the blocking capacitor (C0); the linearization compensation module includes: a first transistor (Q1), a first capacitor (C1); the direct current negative feedback compensation module comprises: a second transistor (Q2), a third transistor (Q3), a first resistor (R1), a second resistor (R2), a third resistor (R3), and a second capacitor (C2); one end of a third resistor (R3) is respectively connected with a collector electrode of a third transistor (Q3), one end of a first capacitor (C1) and a base electrode of the first transistor (Q1), an emitter electrode of the third transistor (Q3) is connected with a collector electrode of a second transistor (Q2), a base electrode of the second transistor (Q2) is respectively connected with one end of the first resistor (R1) and one end of the second capacitor (C2), and an emitter electrode of the second transistor (Q2) is connected with one end of the second resistor (R2); the base electrode of the third transistor (Q3) is respectively connected with one end of the first capacitor (C1) and the base electrode of the first transistor (Q1), and the emitter electrode of the first transistor (Q1) is respectively connected with the other end of the first resistor (R1), one end of the blocking capacitor (C0) and the base electrode of the power tube (Q0).
The blocking capacitor (C0) is used for avoiding mutual interference between the front-stage amplification bias point and the rear-stage amplification bias point; the first capacitor (C1) is a linearization capacitor and is used for stabilizing the voltage of the base electrode of the first transistor Q1 and is not influenced by radio frequency signals; a second capacitor (C2) filter capacitor for providing a best isolation of the bias circuit from the radio frequency signal; the first transistor (Q1) and the third transistor (Q3) form a current mirror for providing a current bias point for the power transistor (Q0); the second transistor (Q2) is a direct current detection amplifying tube and is used for detecting the direct current voltage change condition of the base electrode of the power tube (Q0); the first resistor (R1) is a feedback resistor and is used for controlling the feedback degree; the second resistor (R2) is a regulating resistor and is used for regulating and controlling the base current distribution ratio of the current mirror; the third resistor (R3) is a limiting resistor for controlling the current into the bases of the first transistor (Q1) and the third transistor (Q3).
Wherein: the working principle of current distribution regulation and control of a current mirror formed by a first transistor (Q1) and a third transistor (Q3) is as follows:
even though the parameters of the first transistor (Q1) and the third transistor (Q3) are completely the same, the current distribution is unequal due to different emitter impedances of the first transistor (Q1) and the third transistor (Q3), and the current distribution ratio can be regulated and controlled by adjusting the resistance value of the second resistor (R2), so that the first transistor (Q1) can obtain larger base bias current, the larger bias current is prevented from being realized by reducing the third resistor (R3), and the stability of the reference current Iref is ensured.
The following is the working principle of the direct current negative feedback compensation module and the linearization compensation module in the adaptive radio frequency bias circuit in this embodiment:
the compensation principle of the direct current negative feedback compensation module is as follows:
when the emitter voltage VE1 of the first transistor (Q1) decreases, the bias current IB0 of the power transistor (Q0) decreases, the base voltage VB2 of the second transistor (Q2) decreases, resulting in a decrease in the collector current IC2 of the second transistor (Q2) and the collector current IC3 of the third transistor (Q3), i.e., a decrease in the reference current Iref, and from the base voltage vb1=vref-Iref R3 of the first transistor (Q1), it is known that the base voltage VB1 of the first transistor (Q1) increases, resulting in an increase in the collector current IC1 of the first transistor (Q1), thereby suppressing the decrease in the emitter voltage VE1 of the first transistor (Q1), stabilizing the bias current IB0 of the power transistor (Q0), and maintaining the static bias point of the power transistor (Q0) stable, and vice versa. Because the RFin signal leaked to the base of the second transistor (Q2) is short-circuited to ground through the second capacitor (C2), the second transistor (Q2) can only detect the bias point DC variation condition, and cannot detect the RFin signal power variation.
The compensation principle of the linearization compensation module is as follows:
when the input signal RFin is increased, the RFin signal leaked to the base electrode of the second transistor (Q2) is short-circuited to the ground through the second capacitor (C2), so that the influence on the bias circuit is avoided; because of the rectification characteristic of the base-emitter junction of the first transistor (Q1), the RFin signal leaked to the first transistor (Q1) can cause the base-emitter junction voltage VBE1 of the first transistor (Q1) to drop, so that the drop of the base-emitter junction voltage VBE0 of the power tube (Q0) is compensated, and the static bias point of the power tube (Q0) is stabilized; the RFin signal leaking to the base of the first transistor (Q1) is shorted to ground via the first capacitor (C1), and the base voltage of the first transistor (Q1) has only a DC component, i.e., the first transistor (Q1) has a fixed base voltage VB1. The adaptive rf bias circuit of this embodiment is compared with the existing active bias circuit to compensate the power transistor (Q0) base-emitter junction voltage, as shown in fig. 4.
It should be noted that, in the adaptive radio frequency bias circuit of this embodiment, the second transistor (Q2), the third transistor (Q3), the second resistor (R2), and the third resistor (R3) also form a temperature compensation module.
The compensation principle of the temperature compensation module is as follows:
when the temperature increases, the collector currents of the power transistor (Q0), the first transistor (Q1) and the third transistor (Q3) all increase, that is, IC0, IC1 and IC3 increase, the reference current Iref increases, and when the base voltage vb1=vref-Iref R3 of the first transistor (Q1) decreases, it is known that the collector current C1 of the first transistor (Q1) decreases, the base bias current IB0 of the power transistor (Q0) is stabilized, thereby suppressing the increase of the collector current IC0 of the power transistor (Q0), the collector current variation amount of the power transistor (Q0) is 15mA, and the compensation effect is as shown in fig. 5.
Further, the adaptive radio frequency bias circuit further comprises: one end of the ballast resistor (R0) is respectively connected with the other end of the first resistor (R1) and the emitter of the first transistor (Q1), and the other end of the ballast resistor is respectively connected with one end of the blocking capacitor (C0) and the base of the power tube (Q0).
It should be noted that, in this embodiment, a ballast resistor (R0) is further added, and the bias voltage of the power tube (Q0) is dynamically adjusted in a negative feedback manner by using the principle of resistor voltage division. The ballast resistor (R0) increases the thermal stability of the power tube (Q0), but also increases the nonlinearity of the power tube (Q0), as shown in fig. 3, the effect of the ballast resistor (R0) on the base potential of the power tube (Q0) varies with the input power. Therefore, the selection of the resistance value of the ballast resistor (R0) needs to be compromised according to the design index.
Further, the adaptive radio frequency bias circuit further comprises: a radio frequency choke coil (Lc); one end of the radio frequency choke coil is connected with the collector electrode of the power tube (Q0).
The rf choke (Lc) is used to block rf signals and provide a dc path.
Further, the other end of the third resistor (R3) is connected to a reference voltage; the collector of the first transistor (Q1) and the other end of the radio frequency choke coil (Lc) are connected to a supply voltage; the other end of the first capacitor (C1), the other end of the second resistor (R2), the other end of the second capacitor (C2) and the emitter of the power tube (Q0) are all grounded; the other end of the blocking capacitor (C0) is connected to the input signal.
Further, in a specific embodiment, the first transistor (Q1), the second transistor (Q2), and the third transistor (Q3) are HBT transistors.
Further, in a specific embodiment, the first transistor (Q1), the second transistor (Q2), and the third transistor (Q3) are transistors.
It can be understood that in this embodiment, the first transistor (Q1), the second transistor (Q2), and the third transistor (Q3) may be configured as HBT transistors, or may be configured as a third transistor, which may be selected by a person skilled in the art according to actual situations, and will not be described herein.
According to the self-adaptive radio frequency bias circuit, the emitter voltage of the first transistor (Q1) is restrained from being reduced through the direct-current negative feedback compensation module, so that the bias current of the power tube (Q0) is stabilized; meanwhile, the second transistor (Q2), the third transistor (Q3), the second resistor (R2) and the third resistor (R3) form a module with a temperature compensation function, and when the temperature rises, the module is used for stabilizing the bias current of the power tube (Q0); and based on the direct current negative feedback compensation module, the linearization compensation module can stabilize the bias voltage of the power tube (Q0), so that the thermal stability and linearity of the power tube (Q0) are improved, and the technical problem that the conventional active bias technology cannot effectively provide stable bias voltage or current, so that the thermal stability and linearity of the power tube are poor is solved.
It should be understood that in this application, "at least one" means one or more, and "a plurality" means two or more. "and/or" for describing the association relationship of the association object, the representation may have three relationships, for example, "a and/or B" may represent: only a, only B and both a and B are present, wherein a, B may be singular or plural. The character "/" generally indicates that the context-dependent object is an "or" relationship. "at least one of" or the like means any combination of these items, including any combination of single item(s) or plural items(s). For example, at least one (one) of a, b or c may represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", wherein a, b, c may be single or plural.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims (4)
1. An adaptive radio frequency bias circuit, comprising: the direct current negative feedback compensation module, the linearization compensation module, the temperature compensation module, the blocking capacitor (C0) and the radio frequency choke coil (Lc);
the linearization compensation module includes: a first transistor (Q1), a first capacitor (C1);
the direct current negative feedback compensation module comprises: a second transistor (Q2), a third transistor (Q3), a first resistor (R1), a second resistor (R2), a third resistor (R3), and a second capacitor (C2);
one end of the third resistor (R3) is respectively connected with the collector of the third transistor (Q3), one end of the first capacitor (C1) and the base of the first transistor (Q1), the emitter of the third transistor (Q3) is connected with the collector of the second transistor (Q2), the base of the second transistor (Q2) is respectively connected with one end of the first resistor (R1) and one end of the second capacitor (C2), and the emitter of the second transistor (Q2) is connected with one end of the second resistor (R2); the other end of the third resistor (R3) is connected to a reference voltage;
the base electrode of the third transistor (Q3) is respectively connected with one end of the first capacitor (C1) and the base electrode of the first transistor (Q1), and the emitter electrode of the first transistor (Q1) is respectively connected with the other end of the first resistor (R1), one end of the blocking capacitor (C0) and the base electrode of the power tube (Q0);
the other end of the first capacitor (C1), the other end of the second resistor (R2), the other end of the second capacitor (C2) and the emitter of the power tube (Q0) are grounded;
the collector of the first transistor (Q1) is connected to a supply voltage; the other end of the blocking capacitor (C0) is connected with an input signal;
one end of the radio frequency choke coil is connected with the collector electrode of the power tube (Q0), and the other end of the radio frequency choke coil is connected with the power supply voltage.
2. The adaptive radio frequency bias circuit of claim 1, further comprising: a ballast resistor (R0);
one end of the ballast resistor (R0) is respectively connected with the other end of the first resistor (R1) and the emitter of the first transistor (Q1), and the other end of the ballast resistor is respectively connected with one end of the blocking capacitor (C0) and the base of the power tube (Q0).
3. The adaptive radio frequency bias circuit of claim 1, wherein the first transistor (Q1), the second transistor (Q2), and the third transistor (Q3) are HBT transistors.
4. The adaptive radio frequency bias circuit of claim 1, wherein the first transistor (Q1), the second transistor (Q2), and the third transistor (Q3) are transistors.
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| CN201409116Y (en) * | 2009-04-30 | 2010-02-17 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier biasing circuit |
| JP2018007029A (en) * | 2016-07-01 | 2018-01-11 | 株式会社村田製作所 | Bias circuit |
| CN110098806B (en) * | 2019-04-25 | 2023-03-10 | 河源广工大协同创新研究院 | Self-adaptive linear radio frequency bias circuit |
| CN110176923B (en) * | 2019-05-15 | 2020-02-14 | 河源广工大协同创新研究院 | Self-adaptive linear radio frequency bias module and using circuit thereof |
| CN110190824B (en) * | 2019-05-30 | 2023-02-07 | 广东工业大学 | Active bias network and radio frequency power amplifier |
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