CN201409116Y - Radio-frequency power amplifier biasing circuit - Google Patents

Radio-frequency power amplifier biasing circuit Download PDF

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Publication number
CN201409116Y
CN201409116Y CN2009200559566U CN200920055956U CN201409116Y CN 201409116 Y CN201409116 Y CN 201409116Y CN 2009200559566 U CN2009200559566 U CN 2009200559566U CN 200920055956 U CN200920055956 U CN 200920055956U CN 201409116 Y CN201409116 Y CN 201409116Y
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China
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transistor
base stage
radio
collector electrode
resistance
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Expired - Fee Related
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CN2009200559566U
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Chinese (zh)
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彭凤雄
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ZYW Microelectronics Inc
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ZYW Microelectronics Inc
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Abstract

The utility model discloses a radio-frequency power amplifier biasing circuit, which comprises a transistor Q6, a reference voltage supply circuit which is connected with the transistor Q6 and a feedback compensating circuit, wherein the transistor Q6 is connected with base electrodes of a transistor Q1 and provides bias current for the Q1. The radio-frequency power amplifier biasing circuit utilizes feedback technology to compensate for variation of temperature and bias voltage, can effectively prevent bias current of the radio-frequency power amplifier from changing along with temperature and bias voltage, have good stability, and can be widely applied to various wireless communication equipment and electronic systems.

Description

The radio-frequency power amplifier biasing circuit
Technical field
The utility model relates to the radio-frequency power amplifier field, specifically is meant a kind of high stability biasing circuit that uses in the radio-frequency power amplifier.
Background technology
Radio-frequency power amplifier is widely used in various wireless telecommunications systems and the electronic system, and it is as the critical component in the transmitter, in order to modulated radiofrequency signal is amplified to the certain power value, is transferred to antenna and launches.And the operating state of radio-frequency power amplifier is decided by biasing circuit, thereby the quality of biasing circuit characteristic directly influences the performance of radio-frequency power amplifier, because when bias current changes with bias voltage or temperature, the operating state of radio-frequency power amplifier also will be followed and be changed, thereby the performance of radio-frequency power amplifier also will change thereupon, when low-temp low-pressure, biasing circuit causes that the deterioration of radio-frequency power amplifier performance is particularly evident especially.Thereby need one to come to provide biasing to radio-frequency power amplifier with bias voltage and the less biasing circuit of variations in temperature, to guarantee that radio-frequency power amplifier can steady operation in actual environment.
In traditional radio-frequency power amplifier biasing circuit design, often adopt two diode series connection to produce a reference voltage, provide biasing by current-mirror structure to radio-frequency (RF) transistors then, as shown in Figure 1, dotted portion is a biasing circuit, D 1, D 2Be used to produce a reference voltage, D 1, D 2Usually substitute by the transistor that is connected into the diode form, give Q by mirror image then 2Provide electric current, again by Q 2Pass through R 3Give radio-frequency (RF) transistors Q 1Bias current is provided.Because Q 1, Q 2, Q 3All available pipe of the same race realizes, thereby changes when causing that transistor junction voltage changes Q in temperature 1, Q 2, Q 3V BETo same variation take place, thereby this biasing circuit there is certain compensating action to variations in temperature.But this biasing is quite responsive to the variation of bias voltage.Be changed to 2.95V at bias voltage from 2.75V, temperature when-30 ℃ are changed to 80 ℃, radio-frequency (RF) transistors Q 1Bias current I c1 relative variation will reach 50%.
The performance of radio-frequency power amplifier and its biased electrical are pressed with very big relation, but traditional radio-frequency power amplifier biasing circuit is V owing to adopt simple current-mirror structure to provide biasing to radio-frequency (RF) transistors in the bias voltage excursion BIAS: 2.75V-2.95V, when range of temperature is T:-30 ℃-80 ℃, the relative variation of the bias current of radio-frequency (RF) transistors will reach 50%, thereby have a strong impact on the performance of radio-frequency power amplifier, might make the radio-frequency power amplifier cisco unity malfunction when environment is abominable.
The utility model content
The shortcoming that the utility model changes with temperature and bias voltage at existing radio-frequency power amplifier biasing circuit, proposed the biasing circuit that uses in a kind of novel radio-frequency power amplifier, its adopts the variation with temperature and bias voltage of bias current that feedback technique can good restraining radio-frequency power amplifier.
Technical solution adopted in the utility model is that a kind of radio-frequency power amplifier biasing circuit is connected in radio-frequency (RF) transistors Q 1Base stage comprises and transistor Q 1Base stage is connected to Q 1The transistor Q of bias current is provided 6, with transistor Q 6The reference voltage that connects provides circuit and feedback compensation circuit, Q 6Collector electrode meet power supply V CBDescribed reference voltage provides circuit to comprise transistor Q 3, Q 4, Q 5, Q 4Base stage and Q 5The tie point of emitter pass through resistance R simultaneously 6Ground connection, Q 4Collector electrode meet Q 5Base stage, Q 5Base stage link to each other with collector electrode and be connected to Q again 6Base stage, Q 6Base stage is also passed through resistance R 3Meet power supply V BIASTransistor Q 3Emitter and Q 4The emitter tie point pass through resistance R 4Ground connection, Q 3Collector electrode passes through resistance R 2Connect power supply V CB, Q 3Base stage connects the transistor Q in the feedback compensation circuit 2Collector electrode; Transistor Q in the described feedback compensation circuit 2Grounded emitter, collector electrode passes through resistance R 1Be connected to power supply V BIAS, while Q 2Base stage is passed through resistance R successively 5, R 7Connect transistor Q 1Base stage.
Another embodiment of the present utility model is that a kind of radio-frequency power amplifier biasing circuit is connected in radio-frequency (RF) transistors Q 1Base stage comprises and transistor Q 1Base stage is connected to Q 1The transistor Q of bias current is provided 6, with transistor Q 6The reference voltage that connects provides circuit and feedback compensation circuit, Q 6Collector electrode meet power supply V CBDescribed reference voltage provides circuit to comprise transistor Q 3, Q 4, Q 5, Q 4Base stage and Q 5The tie point of emitter pass through resistance R simultaneously 6Ground connection, Q 4Collector electrode and Q 5Base stage link to each other and to be connected to Q again 6Base stage, Q 5Collector electrode pass through resistance R 8Connect power supply V CBQ 6Base stage is also passed through resistance R 3Meet power supply V BIASTransistor Q 3Emitter and Q 4The emitter tie point pass through resistance R 4Ground connection, Q 3Collector electrode passes through resistance R 2Connect power supply V CB, Q 3Base stage connects the transistor Q in the feedback compensation circuit 2Collector electrode; Transistor Q in the described feedback compensation circuit 2Grounded emitter, collector electrode passes through resistance R 1Be connected to power supply V BIAS, while Q 2Base stage is passed through resistance R successively 5, R 7Connect transistor Q 1Base stage.
Further, described transistor Q 5Collector electrode and transistor Q 6Base stage between also connect a LC resonant network, the other end ground connection of LC resonant network.
Perhaps, further transistor Q 5Collector electrode and transistor Q 6Base stage between also connect a back-biased diode, the other end ground connection of diode.
Compare with conventional art, the utility model is owing to introduce feedback, thereby it can provide good compensation to the variation of variations in temperature and bias voltage, solved the problem that existing radio-frequency power amplifier biased electrical Louis changes with temperature and bias voltage, be changed to 2.95V at bias voltage from 2.75V, temperature is when-30 ℃ are changed to 80 ℃, and transistor biasing electric current I c1 changes relatively less than 30%; And the utility model has only been introduced one-level feedback, good stability.
Description of drawings
Fig. 1 is traditional radio-frequency power amplifier biasing circuit figure;
Fig. 2 is first kind of embodiment circuit diagram of the utility model;
Fig. 3 is second kind of embodiment circuit diagram of the utility model;
Fig. 4 is preferential execution mode one circuit diagram of first kind of embodiment of the utility model;
Fig. 5 is preferential execution mode two circuit diagrams of first kind of embodiment of the utility model.
Embodiment
For ease of it will be appreciated by those skilled in the art that the utility model is described in further detail below in conjunction with drawings and Examples.
Fig. 2 is first kind of embodiment circuit diagram of the utility model, and its implementation is to adopt feedback technique to suppress the variation of bias current with temperature and bias voltage.In the frame of broken lines is biasing circuit, comprises transistor Q 2-Q 6, resistance R 1-R 7, transistor Q wherein 2Base stage connecting resistance R 5, emitter grounding, collector electrode meets Q 3Base stage, Q 3, Q 4Emitter-base bandgap grading meet R 4, Q 3Collector electrode meet R 2, Q 4Base stage meet Q 5Emitter-base bandgap grading, Q 4Collector electrode meet Q 5Base stage, Q 5Base stage link to each other with collector electrode and be connected to Q again 6Base stage, Q 6Emitter-base bandgap grading and R 5, R 7Join Q 6Collector electrode meet power supply V CB, R 1Be connected to V BIASWith Q 3Base stage between, R 2Be connected to Q 3Collector electrode and V CBBetween, R 3Be connected to V BIASWith Q 4Collector electrode between, R 4Be connected to Q 3Emitter-base bandgap grading and ground between, R 5Be connected to Q 2Base stage and Q 6Emitter-base bandgap grading between, R 6Be connected to Q 4Base stage and ground between, R 7Be connected to Q 6Emitter-base bandgap grading and Q 1Base stage between.
Q 4, Q 5Be used to produce a reference voltage (also can adopt the pipe of transistorized other form connections or other types to produce a reference voltage that approximates the pressure drop of two knots) that approximates two transistor junction pressure drops, give Q by mirror image again 6Electric current is provided, passes through R again 7Give radio-frequency (RF) transistors Q 1Provide bias current, simultaneously Q 2To flowing through Q 6Collector current sample (because R 5=R 7* A/B has Ic1=Ic2*A/B), pass to Q then 3, R 4Thereby whole biasing circuit forms a feedback control loop, to the bias current effect of affording redress.Concrete compensation principle is as follows: when making transistor Q for a certain reason 1Collector current Ic1 rise, by relational expression Ic1=Ic2*A/B as can be known, transistor Q 2Collector current Ic2 rise in proportion, Ic2 rises and to cause Q 3Base bias voltage reduce, this can make the voltage of node D reduce, because Q 4, Q 5Two transistors are used to produce the pressure drop of two knots, thereby the voltage follow node D of node A variation, pass through transistor Q again 6After the pressure drop of a knot, the voltage follow of node C reduces, and this causes Q 1Collector current Ic1 descend, thereby stablized transistorized bias current.Resistance R 6Effect be in order to control Q 5Electric current, according to the actual requirements, R 6Can select arbitrary value, work as R greater than 0 6During for infinity with respect to open circuit.
Fig. 3 is the another kind of form of the biasing circuit scheme that the utility model patent proposes, and the difference of it and Fig. 2 is transistor Q 5Collector electrode by a resistance R 8Be connected to supply voltage V CB(can be according to actual conditions to R 8Accept or reject), its operation principle is identical with biasing circuit shown in Figure 2.In the side circuit design, can be as required at Q 4Collector electrode and Q 5Base stage between, Q 5Base stage and node A between, Q 5Emitter-base bandgap grading and Q 4Base stage between insert resistance and come Q 4, Q 5The reference voltage that produces is regulated; Some resistance among Fig. 2, Fig. 3 can be accepted or rejected according to actual conditions; Can on the basis of biasing circuit Fig. 2, Fig. 3, increase filter circuit or linearizer.
With reference to Fig. 4 is preferential execution mode one circuit diagram of first kind of embodiment of the utility model.It introduces a resonance in the LC of operating frequency resonant network at node A, and this plays two functions in biasing circuit, and one can reduce noise to the high-frequency signal filtering in the biasing circuit; Its two, resonant network L 2, C 2Adding, reduced from Q 6The input impedance seen into of emitter-base bandgap grading, thereby when input signal power increased, the input signal that has part was from Q 6Emitter-base bandgap grading flow into, again by the LC resonant network to ground, this specific character can compensate Q 1Knot pressure drop V BE1The decline phenomenon that when increasing, produces with the input radio frequency signal power, thus help to improve the linearity of radio-frequency power amplifier.In some cases, also can be only substitute the LC resonant network and play similar function with an electric capacity that is parallel to ground.In Fig. 4, node C also has a grounding through resistance, and this can play the effect of firm power.
Described and connect the linearization technique of LC resonant network except adopting Fig. 4, Fig. 5 has provided the New-type radio-frequency bias circuit of power amplifier of another band linearisation structure, the difference of it and Fig. 4 is that it has replaced the LC resonant network with a back-biased diode, diode can be realized by a transistorized PN junction, because what the reversed biased diodes equivalence was a variable capacitance with a resistance is in parallel, and along with the increase of input power, its equiva lent impedance reduces, and can compensate Q equally 1Knot pressure drop V BE1The decline phenomenon that when the input radio frequency signal power increases, produces, thus play the effect that improves linearity of radio-frequency power amplifier.Based on same principle, when being placed Node B, linearisation structure recited above also can obtain same effect, when being necessary, can add the performance that said structure is optimized radio-frequency power amplifier simultaneously at node A and Node B.
Same principle, the second kind of embodiment of the utility model for as shown in Figure 3 can add filter circuit shown in Fig. 4 or Fig. 5 or linearizer too, and its related work principle repeats no more.

Claims (6)

1, a kind of radio-frequency power amplifier biasing circuit is connected in radio-frequency (RF) transistors Q 1Base stage is characterized in that: comprise and transistor Q 1Base stage is connected to Q 1The transistor Q of bias current is provided 6, with transistor Q 6The reference voltage that connects provides circuit and feedback compensation circuit, Q 6Collector electrode meet power supply V CBDescribed reference voltage provides circuit to comprise transistor Q 3, Q 4, Q 5, Q 4Base stage and Q 5The tie point of emitter pass through resistance R simultaneously 6Ground connection, Q 4Collector electrode meet Q 5Base stage, Q 5Base stage link to each other with collector electrode and be connected to Q again 6Base stage, Q 6Base stage is also passed through resistance R 3Meet power supply V BIASTransistor Q 3Emitter and Q 4The emitter tie point pass through resistance R 4Ground connection, Q 3Collector electrode passes through resistance R 2Connect power supply V CB, Q 3Base stage connects the transistor Q in the feedback compensation circuit 2Collector electrode; Transistor Q in the described feedback compensation circuit 2Grounded emitter, collector electrode passes through resistance R 1Be connected to power supply V BIAS, while Q 2Base stage is passed through resistance R successively 5, R 7Connect transistor Q 1Base stage.
2, radio-frequency power amplifier biasing circuit according to claim 1 is characterized in that: transistor Q 5Collector electrode and transistor Q 6Base stage between also connect a LC resonant network, the other end ground connection of LC resonant network.
3, radio-frequency power amplifier biasing circuit according to claim 1 is characterized in that: transistor Q 5Collector electrode and transistor Q 6Base stage between also connect a back-biased diode, the other end ground connection of diode.
4, a kind of radio-frequency power amplifier biasing circuit is connected in radio-frequency (RF) transistors Q 1Base stage is characterized in that: comprise and transistor Q 1Base stage is connected to Q 1The transistor Q of bias current is provided 6, with transistor Q 6The reference voltage that connects provides circuit and feedback compensation circuit, Q 6Collector electrode meet power supply V CBDescribed reference voltage provides circuit to comprise transistor Q 3, Q 4, Q 5, Q 4Base stage and Q 5The tie point of emitter pass through resistance R simultaneously 6Ground connection, Q 4Collector electrode and Q 5Base stage link to each other and to be connected to Q again 6Base stage, Q 5Collector electrode pass through resistance R 8Connect power supply V CBQ 6Base stage is also passed through resistance R 3Meet power supply V BTASTransistor Q 3Emitter and Q 4The emitter tie point pass through resistance R 4Ground connection, Q 3Collector electrode passes through resistance R 2Connect power supply V CB, Q 3Base stage connects the transistor Q in the feedback compensation circuit 2Collector electrode; Transistor Q in the described feedback compensation circuit 2Grounded emitter, collector electrode passes through resistance R 1Be connected to power supply V BIAS, while Q 2Base stage is passed through resistance R successively 5, R 7Connect transistor Q 1Base stage.
5, radio-frequency power amplifier biasing circuit according to claim 4 is characterized in that: transistor Q 5Collector electrode and transistor Q 6Base stage between also connect a LC resonant network, the other end ground connection of LC resonant network.
6, radio-frequency power amplifier biasing circuit according to claim 4 is characterized in that: transistor Q 5Collector electrode and transistor Q 6Base stage between also connect a back-biased diode, the other end ground connection of diode.
CN2009200559566U 2009-04-30 2009-04-30 Radio-frequency power amplifier biasing circuit Expired - Fee Related CN201409116Y (en)

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102255605A (en) * 2011-01-14 2011-11-23 苏州英诺迅科技有限公司 Adjustable active biasing circuit for radiofrequency power amplifier
CN103546108A (en) * 2012-07-11 2014-01-29 三菱电机株式会社 Power amplifier
CN104682898A (en) * 2015-02-15 2015-06-03 上海唯捷创芯电子技术有限公司 Active bias circuit for power amplifier and communication equipment
CN106208980A (en) * 2016-06-27 2016-12-07 锐迪科微电子（上海）有限公司 A kind of radio-frequency power amplifier biasing circuit and its implementation
CN106405222A (en) * 2016-09-20 2017-02-15 锐迪科微电子（上海）有限公司 Radio frequency power detection circuit
CN106849886A (en) * 2015-12-04 2017-06-13 大唐移动通信设备有限公司 A kind of compensation biasing circuit and power amplifier device for power amplifier
CN109150115A (en) * 2018-08-01 2019-01-04 北京中科汉天下电子技术有限公司 A kind of radio-frequency power amplifier biasing circuit
CN110176923A (en) * 2019-05-15 2019-08-27 河源广工大协同创新研究院 A kind of adaptive linear radio-frequency bias module and its use circuit
CN110311632A (en) * 2019-06-13 2019-10-08 广东工业大学 A kind of adaptive bias circuit with high temperature drift rejection ability
CN112564643A (en) * 2020-12-08 2021-03-26 广东工业大学 Self-adaptive radio frequency bias circuit
WO2023065844A1 (en) * 2021-10-19 2023-04-27 深圳飞骧科技股份有限公司 Boost protection circuit, power amplifier, and related chip

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102255605A (en) * 2011-01-14 2011-11-23 苏州英诺迅科技有限公司 Adjustable active biasing circuit for radiofrequency power amplifier
CN103546108A (en) * 2012-07-11 2014-01-29 三菱电机株式会社 Power amplifier
CN104682898A (en) * 2015-02-15 2015-06-03 上海唯捷创芯电子技术有限公司 Active bias circuit for power amplifier and communication equipment
WO2016127752A1 (en) * 2015-02-15 2016-08-18 上海唯捷创芯电子技术有限公司 Active bias circuit and mobile terminal for power amplifier
US10153733B2 (en) 2015-02-15 2018-12-11 Shanghai Vanchip Technologies Co., Ltd. Active bias circuit for power amplifier, and mobile terminal
CN104682898B (en) * 2015-02-15 2017-03-22 上海唯捷创芯电子技术有限公司 Active bias circuit for power amplifier and communication equipment
CN106849886A (en) * 2015-12-04 2017-06-13 大唐移动通信设备有限公司 A kind of compensation biasing circuit and power amplifier device for power amplifier
CN106208980B (en) * 2016-06-27 2018-12-07 锐迪科微电子（上海）有限公司 A kind of radio-frequency power amplifier biasing circuit and its implementation
CN106208980A (en) * 2016-06-27 2016-12-07 锐迪科微电子（上海）有限公司 A kind of radio-frequency power amplifier biasing circuit and its implementation
CN106405222A (en) * 2016-09-20 2017-02-15 锐迪科微电子（上海）有限公司 Radio frequency power detection circuit
CN106405222B (en) * 2016-09-20 2019-03-05 锐迪科微电子（上海）有限公司 A kind of RF power sensing circuit
CN109150115A (en) * 2018-08-01 2019-01-04 北京中科汉天下电子技术有限公司 A kind of radio-frequency power amplifier biasing circuit
CN110176923A (en) * 2019-05-15 2019-08-27 河源广工大协同创新研究院 A kind of adaptive linear radio-frequency bias module and its use circuit
CN110176923B (en) * 2019-05-15 2020-02-14 河源广工大协同创新研究院 Self-adaptive linear radio frequency bias module and using circuit thereof
CN110311632A (en) * 2019-06-13 2019-10-08 广东工业大学 A kind of adaptive bias circuit with high temperature drift rejection ability
CN110311632B (en) * 2019-06-13 2024-05-14 广东工业大学 Self-adaptive bias circuit with high-temperature drift inhibition capability
CN112564643A (en) * 2020-12-08 2021-03-26 广东工业大学 Self-adaptive radio frequency bias circuit
WO2023065844A1 (en) * 2021-10-19 2023-04-27 深圳飞骧科技股份有限公司 Boost protection circuit, power amplifier, and related chip

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Granted publication date: 20100217

Termination date: 20160430