CN106208980A - A kind of radio-frequency power amplifier biasing circuit and its implementation - Google Patents
A kind of radio-frequency power amplifier biasing circuit and its implementation Download PDFInfo
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- CN106208980A CN106208980A CN201610482039.0A CN201610482039A CN106208980A CN 106208980 A CN106208980 A CN 106208980A CN 201610482039 A CN201610482039 A CN 201610482039A CN 106208980 A CN106208980 A CN 106208980A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
Abstract
This application discloses a kind of radio-frequency power amplifier biasing circuit, described biasing circuit includes the difference amplifier being made up of two audions, difference amplifier is using the base stage of the two audion as differential input end, using the colelctor electrode of one of them audion as Single-end output end；Described biasing circuit also includes active matrix driving pipe, and the base stage of described active matrix driving pipe receives the voltage of the Single-end output end of difference amplifier and provides base bias current as input, the transmitting extremely power tube of described active matrix driving pipe；Two dividing potential drop branch roads are respectively two the audions offer base voltages constituting difference amplifier, and the base voltage of two audions of described composition difference amplifier changes in the opposite direction when variations in temperature.The application can substantially reduce the sensitivity to variations in temperature, improves the linearity of radio-frequency power amplifier, so that radio-frequency power amplifier can keep normal operating conditions under the most severe working condition and environment.
Description
Technical field
The application relates to the biasing circuit of a kind of radio-frequency power amplifier.
Background technology
In RF receiving circuit, radio-frequency front-end (RF front end) is often referred to antenna to all electricity between frequency mixer
Road, is used for the radiofrequency signal by antenna receives and is converted to the intermediate-freuqncy signal that frequency is relatively low.As a example by the receiver of super-heterodyne architecture,
Radio-frequency front-end generally includes band filter, radio-frequency power amplifier, local oscillator, frequency mixer, it is also possible to include that modulus turns
Parallel operation.
In RF front-end circuit, radio-frequency power amplifier is one of most important device, is also the device of power consumption maximum.
During work, radio-frequency power amplifier can produce substantial amounts of heat, and its temperature also increases.Due to PN junction characteristic, in forward voltage drop
Time constant, forward current increases with the rising of temperature.Therefore with the rising of temperature, electric current increases radio-frequency power amplifier, increases
Big electric current produces more heat so that the temperature of radio-frequency power amplifier raises further, hence into vicious cycle.This
In the case of, radio-frequency power amplifier even can deviate normal working point, affects its stability.High linearity (high
Linearity) radio-frequency power amplifier is due to inefficient, thus above-mentioned phenomenon is the most obvious.
In order to overcome above-mentioned phenomenon, it is necessary to a kind of radio-frequency power amplifier biasing circuit with temperature compensation function.
Referring to Fig. 1, this is a kind of existing radio-frequency power amplifier and biasing circuit thereof, and dashed rectangle part therein is biased electrical
Road.Described radio-frequency power amplifier mainly includes that audion four Q4 is also referred to as power tube, and its colelctor electrode connects power supply by inductance one L1
Voltage Vsup, its grounded emitter, its base stage connects radio-frequency (RF) signal input end RFin by electric capacity two C2.Described biasing circuit master
Including three audions, the base stage of audion one Q1 and audion two Q2 all the most all makes as diode with colelctor electrode short circuit
With, audion three Q3 is also referred to as active matrix driving pipe for providing base bias current for power tube Q4.On reference voltage Vreg and ground
Between be in series with resistance one R1, audion one Q1 and audion two Q2, audion one Q1 therein and audion two Q2 and play temperature
Degree compensating action.Audion one Q1 and audion two Q2 of series connection are in parallel with electric capacity one C1, and electric capacity one C1 acts primarily as and is linearly turned into
With.The base stage of active matrix driving pipe Q3 connects the junction point between resistance one R1 and electric capacity one C1, and its colelctor electrode passes through resistance two R2
Connecting supply voltage Vsup, its emitter stage connects the base stage of power tube Q4 by resistance three R3.Each audion, the most all uses
Heterojunction bipolar transistor (HBT).This radio-frequency power amplifier and more contents of biasing circuit thereof, be referred to 2002
" the PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed that JIUYUE is published
Linearizing bias circuit " literary composition, author is Youn Sub Noh and Chul Soon Park, is published in " IEEE
Journal of Solid-State Circuits " volume 37 9 phase.
Radio-frequency power amplifier biasing circuit shown in Fig. 1 is easy to use, but is primarily present two problems.One, only
When four audion Q1 to Q4 have identical temperature environment and working condition, ideal temperature could be realized and mend
Repay effect.This cannot realize in actual applications, can only achieve the effect temperature compensation of fraction when reality is applied.
Its two, this biasing circuit is very sensitive to the change of reference voltage Vreg.When reference voltage Vreg changes, power tube
The base bias current of Q4 can change a lot.
Publication No. CN1373626A, publication date are that the Chinese invention patent application on October 9th, 2002 discloses one
Bias control circuit, is used for the voltage that controls according to input and controls the bias current of high frequency power amplifier.Including sending out
The difference amplifier that two audions that emitter-base bandgap grading is connected are constituted, is only used for providing the gain controlling voltage to amplify, does not play temperature
Compensating action.
Publication No. CN101478293A, publication date are that the Chinese invention patent application on July 8th, 2009 discloses one
There is the power amplifier of temperature-compensating.Including the difference pipe of two audions compositions that emitter stage is connected, also it is only to use
Operational amplifier function is provided, does not play temperature compensation function.
Summary of the invention
Technical problems to be solved in this application are to provide the biasing circuit of a kind of radio-frequency power amplifier, can substantially drop
The low sensitivity that variations in temperature and/or reference voltage are changed so that radio-frequency power amplifier steady operation.To this end, this Shen
Please also provide the method that described biasing circuit realizes temperature-compensating.
For solving above-mentioned technical problem, the application radio-frequency power amplifier biasing circuit includes being made up of two audions
Difference amplifier, difference amplifier is using the base stage of the two audion as differential input end, with the collection of one of them audion
Electrode is as Single-end output end；Described biasing circuit also includes active matrix driving pipe, and the base stage of described active matrix driving pipe receives difference
The voltage of the Single-end output end of amplifier is as input, and the transmitting extremely power tube of described active matrix driving pipe provides base bias electricity
Stream；Two dividing potential drop branch roads are respectively two the audions offer base voltages constituting difference amplifier, and when variations in temperature
The base voltage of two audions of described composition difference amplifier changes in the opposite direction.
Described differential amplification implement body has two kinds of implementations.The first is achieved in that: constitute the two of difference amplifier
The emitter stage of individual audion is connected and passes through a current source ground connection.This implementation concrete example is in this way: constitute differential amplification
The emitter stage of two audions of device is connected and passes through audion six ground connection；The base stage of audion five and colelctor electrode short circuit；By electricity
The branch road that resistance seven and audion five are composed in series is equivalent to a current source；The base of the base stage connecting triode six of audion five
Pole；Audion six is equivalent to a mirror current source.The second is achieved in that: constitute two audions of difference amplifier
Three resistance eutral groundings that emitter stage is connected by Y type.
Described dividing potential drop branch road has four kinds of implementations.The first is achieved in that: in a dividing potential drop branch road, from reference
Voltage has been sequentially connected in series resistance one, diode one and resistance two toward the direction on ground, and the negative electrode of diode one is for constituting differential amplification
One audion of device provides base voltage；In another dividing potential drop branch road, from reference voltage, the direction toward ground has been sequentially connected in series
Resistance five, diode two and resistance six, the anode of diode two provides base stage for another audion constituting difference amplifier
Voltage.The second is achieved in that: in a dividing potential drop branch road, from reference voltage toward ground direction be sequentially connected in series resistance one,
Audion five and resistance two, the base stage of audion five and colelctor electrode short circuit, the transmitting of audion five extremely constitutes difference amplifier
Audion base voltage is provided；In another dividing potential drop branch road, from reference voltage, the direction toward ground has been sequentially connected in series electricity
Resistance eight, audion six and resistance nine, the base stage of audion six and colelctor electrode short circuit, the current collection of audion six extremely constitutes difference and puts
Another audion of big device provides base voltage.By the dividing potential drop branch road combined crosswise in both the above implementation, just constitute
The third and the 4th kind of implementation.
Further, described biasing circuit also includes electric capacity one, between Single-end output end and the ground of difference amplifier, uses
In linearisation effect.
Further, described audion uses heterojunction bipolar transistor and/or metal oxide semiconductor field-effect brilliant
Body pipe.
The implementation method of the application radio-frequency power amplifier biasing circuit is: when the temperature varies, and two dividing potential drops are propped up
Road is respectively the base voltage of two the audions offers constituting difference amplifier and produces change in opposite direction, by two three poles
The voltage of the Single-end output end of the difference amplifier that pipe is formed declines；This makes the voltage of active matrix driving pipe also followed by down
Fall, and the base bias current being supplied to power tube is changed towards the direction compensating variations in temperature.
Having the technical effect that the application obtains can substantially reduce the sensitivity to variations in temperature, improves radio-frequency power and amplifies
The linearity of device, the shape so that radio-frequency power amplifier can keep normally working under the most severe working condition and environment
State.
Accompanying drawing explanation
Fig. 1 is a kind of existing radio-frequency power amplifier and the schematic diagram of biasing circuit.
Fig. 2 is the schematic diagram of the embodiment one of the radio-frequency power amplifier of the application and biasing circuit.
Fig. 3 is the schematic diagram of the embodiment two of the radio-frequency power amplifier of the application and biasing circuit.
Fig. 4 is the schematic diagram of the embodiment three of the radio-frequency power amplifier of the application and biasing circuit.
Fig. 5 is the schematic diagram of the embodiment four of the radio-frequency power amplifier of the application and biasing circuit.
Description of reference numerals in figure: represent natural number with x, Qx is audion；Lx is inductance；Cx is electric capacity；Rx is resistance；
Vsup is supply voltage；Vreg is reference voltage；RFin is radio-frequency (RF) signal input end.
Detailed description of the invention
Referring to Fig. 2, this is radio-frequency power amplifier and the embodiment one of biasing circuit, the dotted line therein of the application
Blocked portion is biasing circuit.Described radio-frequency power amplifier mainly includes that audion four Q4 is also referred to as power tube, and its colelctor electrode leads to
Crossing inductance one L1 and meet supply voltage Vsup, its grounded emitter, its base stage connects radio-frequency (RF) signal input end by electric capacity two C2
RFin.The colelctor electrode of power tube Q4 is also as RF signal output (not shown).Described biasing circuit mainly includes five three
Pole pipe and two diodes.Resistance one R1, diode one D1 and the resistance being sequentially connected in series from the direction on the past ground of reference voltage Vreg
Two R2 constitute the first dividing potential drop branch road, and the negative electrode of diode one D1 is referred to as bias point one V1 for providing base stage for audion one Q1
Bias voltage.Resistance five R5, diode two D2 and resistance six R6 that are sequentially connected in series from the direction on the past ground of reference voltage Vreg are constituted
Second dividing potential drop branch road, the anode of diode two D2 is referred to as bias point two V2 for providing base bias electricity for audion two Q2
Pressure.Audion one Q1 and audion two Q2 constitutes difference amplifier, and their base stage is respectively with bias point one V1 and bias point
The voltage of two V2 is as input, and their emitter stage is connected and the colelctor electrode of connecting triode six Q6.The current collection of audion one Q1
Pole is as the output point Vo of the Single-end output of difference amplifier.The colelctor electrode of audion one Q1 connects reference also by resistance three R3
Voltage Vreg.The colelctor electrode of audion two Q2 connects reference voltage Vreg also by resistance four R4.The base stage of audion five Q5 with
Therefore colelctor electrode short circuit uses as diode, and its colelctor electrode connects reference voltage Vreg by resistance seven R7, and its emitter stage connects
Ground, the base stage of its base stage connecting triode six Q6.The grounded emitter of audion six Q6.Audion three Q3 is also referred to as active matrix driving
Pipe, is used for providing base bias current for power tube Q4.The base stage of active matrix driving pipe Q3 connects output point Vo and with output point Vo
Voltage as input, its colelctor electrode by resistance eight R8 connect supply voltage Vsup, its emitter stage by resistance nine R9 connect
The base stage of power tube Q4 thus provide base bias current for power tube Q4.Electric capacity one it is also associated with between output point Vo and ground
C1, electric capacity one C1 act primarily as linearisation effect.Each audion, it is preferred to use heterojunction bipolar transistor (HBT), it is possible to use
Metal oxide semiconductor field effect tube (MOSFET).
In above-described embodiment one, resistance seven R7 connects with audion five Q5 used as diode and constitutes an electric current
Source, and audion six Q6 is mirror current source.It is alternatively possible to the series arm of resistance seven R7 and audion five Q5 is deleted,
Audion six Q6 is replaced with a current source simultaneously.
The operation principle of above-described embodiment one is: when the temperature increases, and the forward voltage drop of diode reduces, therefore bias point
The voltage of one V1 raises, and the voltage of bias point two V2 reduces.The differential amplification being made up of audion one Q1 and audion two Q2
Device, the voltage of its output point Vo will decline A × (V1-V2), and wherein A is the amplification of difference amplifier.This makes active driving
The base voltage of dynamic pipe Q3 also followed by decline, and the base bias current being supplied to power tube Q4 is reduced, thus to temperature
Degree rising is compensated.In like manner, upon a drop in temperature, the base voltage of active matrix driving pipe Q3 will rise, and make to be supplied to
The base bias current of power tube Q4 increases, thus declines temperature and compensated.Can by the suitable device parameters of selection
To adjust the amplification of difference amplifier, thus the base bias current provided for power tube Q4 can just compensation temperature become
The impact changed, makes power tube Q4 always can be biased in required operating point.
Referring to Fig. 3, this is radio-frequency power amplifier and the embodiment two of biasing circuit, the dotted line therein of the application
Blocked portion is biasing circuit.Described radio-frequency power amplifier mainly includes that audion four Q4 is also referred to as power tube, and its colelctor electrode leads to
Crossing inductance one L1 and meet supply voltage Vsup, its grounded emitter, its base stage connects radio-frequency (RF) signal input end by electric capacity two C2
RFin.The colelctor electrode of power tube Q4 is also as RF signal output (not shown).Described biasing circuit mainly includes five three
Pole is managed, and the base stage of audion five Q5 therein and audion six Q6 all the most all uses as diode with colelctor electrode short circuit.From
Resistance one R1, audion five Q5 and resistance two R2 that the direction on the past ground of reference voltage Vreg is sequentially connected in series constitute the first dividing potential drop and prop up
Road, the emitter stage of audion five Q5 is referred to as bias point one V1 for providing base bias voltage for audion one Q1.From with reference to electricity
Pressure Vreg constitutes the second dividing potential drop branch road toward direction resistance eight R8, audion six Q6 that are sequentially connected in series on ground and resistance nine R9, and three
The colelctor electrode of pole pipe six Q6 is referred to as bias point two V2 for providing base bias voltage for audion two Q2.Audion one Q1 and three
Pole pipe two Q2 constitutes difference amplifier, and their base stage is respectively using the voltage of bias point one V1 and bias point two V2 as defeated
Entering, the colelctor electrode of audion one Q1 is as the output point Vo of the Single-end output of difference amplifier.The colelctor electrode of audion one Q1 is also
Connecting reference voltage Vreg by resistance three R3, its emitter stage is also by resistance five R5 connected and resistance seven R7 ground connection.Three poles
The colelctor electrode of pipe two Q2 connects reference voltage Vreg also by resistance four R4, and its emitter stage is also by resistance six R6 connected and electricity
Hinder seven R7 ground connection.Audion three Q3 is also referred to as active matrix driving pipe, is used for providing base bias current for power tube Q4.Active matrix driving pipe
The base stage of Q3 connects output point Vo and using the voltage of output point Vo as input, and its colelctor electrode connects power supply by resistance ten R10
Voltage Vsup, its emitter stage connects the base stage of power tube Q4 by resistance 11 R11 thus provides base bias for power tube Q4
Electric current.Between output point Vo and ground, it is also associated with electric capacity one C1, electric capacity one C1 acts primarily as linearisation effect.Each audion,
Preferably employ heterojunction bipolar transistor, it is possible to use metal oxide semiconductor field effect tube.
Comparing embodiment one and embodiment two are it is found that both mainly have following two to distinguish.
First it is the structure of difference amplifier.The emitter stage of two audions constituting difference amplifier in embodiment one
It is all connected with ground connection after same current source.Resistance seven R7 and the series arm of audion five Q5, audion six Q6 may be regarded as electric current
A kind of specific implementation in source.The emitter stage of two audions constituting difference amplifier in embodiment two is by Y type even
Three resistance eutral groundings connect.Difference amplifier in the two embodiment functionally no difference.
Next to that the structure of dividing potential drop branch road.Two dividing potential drop branch roads in embodiment one all use diode.In embodiment two
Two dividing potential drop branch roads all use the audion of base stage and colelctor electrode short circuit, be equivalent to diode.Use special annexation
Audion replaces diode can have essentially identical temperature characterisitic and device property with other audions in circuit,
Effect when realizing temperature-compensating may be more preferably.Alternatively, it is possible in a dividing potential drop branch road, use diode, at another point
Pressure branch road uses the audion of base stage and colelctor electrode short circuit.
The operation principle of above-described embodiment two is: when the temperature increases, the current collection of the audion that base stage is connected with colelctor electrode
Pole-emitter voltage reduces, and therefore the voltage of bias point one V1 raises, and the voltage of bias point two V2 reduces.By audion one Q1
The difference amplifier formed with audion two Q2, the voltage of its output point Vo will decline A × (V1-V2), and wherein A is that difference is put
The amplification of big device.This makes the voltage of active matrix driving pipe Q3 also followed by decline, and makes to be supplied to the base of power tube Q4
Pole bias current reduces, thus raises temperature and compensated.In like manner, upon a drop in temperature, the voltage of active matrix driving pipe Q3
To rise, and the base bias current being supplied to power tube Q4 is increased, thus temperature be declined and is compensated.By choosing
Select suitable device parameters and can adjust the amplification of difference amplifier, thus the base bias current provided for power tube Q4
Can just compensation temperature change impact, make power tube Q4 always can be biased in required operating point.
Referring to Fig. 4, this is radio-frequency power amplifier and the embodiment three of biasing circuit, the dotted line therein of the application
Blocked portion is biasing circuit.Embodiment three may be regarded as the differential amplifier arrangements in embodiment one and the dividing potential drop in embodiment two
The combination of circuit structure.Described radio-frequency power amplifier mainly includes that audion four Q4 is also referred to as power tube, and its colelctor electrode is by electricity
Feeling a L1 and meet supply voltage Vsup, its grounded emitter, its base stage connects radio-frequency (RF) signal input end RFin by electric capacity two C2.Merit
The colelctor electrode of rate pipe Q4 is also as RF signal output (not shown).Described biasing circuit mainly includes seven audions, its
In audion five Q5, audion seven Q7 and the base stage of audion eight Q8 all the most all make as diode with colelctor electrode short circuit
With.Resistance one R1, audion seven Q7 and resistance two R2 that are sequentially connected in series from the direction on the past ground of reference voltage Vreg constitute first
Dividing potential drop branch road, the emitter stage of audion seven Q7 is referred to as bias point one V1 for providing base bias voltage for audion one Q1.From
Resistance five R5, audion eight Q8 and resistance six R6 that the direction on the past ground of reference voltage Vreg is sequentially connected in series constitute the second dividing potential drop and prop up
Road, the colelctor electrode of audion eight Q8 is referred to as bias point two V2 for providing base bias voltage for audion two Q2.Audion one
Q1 and audion two Q2 constitutes difference amplifier, and their base stage is made with the voltage of bias point one V1 and bias point two V2 respectively
For input, their emitter stage is connected and the colelctor electrode of connecting triode six Q6, and the colelctor electrode of audion one Q1 is put as difference
The output point Vo of the Single-end output of big device.The colelctor electrode of audion one Q1 connects reference voltage Vreg also by resistance three R3.Three
The colelctor electrode of pole pipe two Q2 connects reference voltage Vreg also by resistance four R4.The colelctor electrode of audion five Q5 passes through resistance seven R7
Connect reference voltage Vreg, its grounded emitter, the base stage of its base stage connecting triode six Q6.The emitter stage of audion six Q6 connects
Ground.Audion three Q3 is also referred to as active matrix driving pipe, is used for providing base bias current for power tube Q4.The base stage of active matrix driving pipe Q3
Connecting output point Vo and using the voltage of output point Vo as input, its colelctor electrode connects supply voltage Vsup by resistance eight R8,
Its emitter stage connects the base stage of power tube Q4 by resistance nine R9 thus provides base bias current for power tube Q4.At output point
It is also associated with electric capacity one C1, electric capacity one C1 between Vo and ground and acts primarily as linearisation effect.Each audion, it is preferred to use hetero-junctions
Bipolar transistor, it is possible to use metal oxide semiconductor field effect tube.
In above-described embodiment three, resistance seven R7 connects with audion five Q5 used as diode and constitutes an electric current
Source, and audion six Q6 is mirror current source.It is alternatively possible to the series arm of resistance seven R7 and audion five Q5 is deleted,
Audion six Q6 is replaced with a current source simultaneously.
The operation principle of above-described embodiment three is: when the temperature increases, the current collection of the audion that base stage is connected with colelctor electrode
Pole-emitter voltage reduces, and therefore the voltage of bias point one V1 raises, and the voltage of bias point two V2 reduces.By audion one Q1
The difference amplifier formed with audion two Q2, the voltage of its output point Vo will decline A × (V1-V2), and wherein A is that difference is put
The amplification of big device.This makes the voltage of active matrix driving pipe Q3 also followed by decline, and makes to be supplied to the base of power tube Q4
Pole bias current reduces, thus raises temperature and compensated.In like manner, upon a drop in temperature, the voltage of active matrix driving pipe Q3
To rise, and the base bias current being supplied to power tube Q4 is increased, thus temperature be declined and is compensated.By choosing
Select suitable device parameters and can adjust the amplification of difference amplifier, thus the base bias current provided for power tube Q4
Can just compensation temperature change impact, make power tube Q4 always can be biased in required operating point.
Referring to Fig. 5, this is radio-frequency power amplifier and the embodiment four of biasing circuit, the dotted line therein of the application
Blocked portion is biasing circuit.Embodiment four may be regarded as the differential amplifier arrangements in embodiment two and the dividing potential drop in embodiment one
The combination of circuit structure.Described radio-frequency power amplifier mainly includes that audion four Q4 is also referred to as power tube, and its colelctor electrode is by electricity
Feeling a L1 and meet supply voltage Vsup, its grounded emitter, its base stage connects radio-frequency (RF) signal input end RFin by electric capacity two C2.Merit
The colelctor electrode of rate pipe Q4 is also as RF signal output (not shown).Described biasing circuit mainly includes three audions and two
Individual diode.Resistance one R1, diode one D1 and resistance two R2 that are sequentially connected in series from the direction on the past ground of reference voltage Vreg are constituted
First dividing potential drop branch road, the negative electrode of diode one D1 is referred to as bias point one V1 for providing base bias electricity for audion one Q1
Pressure.Resistance eight R8, diode two D2 and resistance nine R9 that are sequentially connected in series from the direction on the past ground of reference voltage Vreg constitute second
Dividing potential drop branch road, the anode of diode two D2 is referred to as bias point two V2 for providing base bias voltage for audion two Q2.Three poles
Pipe one Q1 and audion two Q2 constitutes difference amplifier, and their base stage is respectively with bias point one V1 and the electricity of bias point two V2
Pressure is as input, and the colelctor electrode of audion one Q1 is as the output point Vo of the Single-end output of difference amplifier.Audion one Q1's
Colelctor electrode connects reference voltage Vreg also by resistance three R3, and its emitter stage connects also by resistance five R5 and resistance seven R7 of series connection
Ground.The colelctor electrode of audion two Q2 connects reference voltage Vreg also by resistance four R4, and its emitter stage is also by the resistance of series connection
Six R6 and resistance seven R7 ground connection.Audion three Q3 is also referred to as active matrix driving pipe, is used for providing base bias current for power tube Q4.Have
Source drives the base stage of pipe Q3 to connect output point Vo and using the voltage of output point Vo as input, and its colelctor electrode passes through resistance ten R10
Connecting supply voltage Vsup, its emitter stage connects the base stage of power tube Q4 by resistance 11 R11 thus provides for power tube Q4
Base bias current.Between output point Vo and ground, it is also associated with electric capacity one C1, electric capacity one C1 acts primarily as linearisation effect.Each
Audion, it is preferred to use heterojunction bipolar transistor, it is possible to use metal oxide semiconductor field effect tube.
The operation principle of above-described embodiment four is: when the temperature increases, and the forward voltage drop of diode reduces, therefore bias point
The voltage of one V1 raises, and the voltage of bias point two V2 reduces.The differential amplification being made up of audion one Q1 and audion two Q2
Device, the voltage of its output point Vo will decline A × (V1-V2), and wherein A is the amplification of difference amplifier.This makes active driving
The base voltage of dynamic pipe Q3 also followed by decline, and the base bias current being supplied to power tube Q4 is reduced, thus to temperature
Degree rising is compensated.In like manner, upon a drop in temperature, the base voltage of active matrix driving pipe Q3 will rise, and make to be supplied to
The base bias current of power tube Q4 increases, thus declines temperature and compensated.Can by the suitable device parameters of selection
To adjust the amplification of difference amplifier, thus the base bias current provided for power tube Q4 can just compensation temperature become
The impact changed, makes power tube Q4 always can be biased in required operating point.
Comprehensive each embodiment above understands, the biasing circuit of the radio-frequency power amplifier of the application and prior art phase
Ratio, has following prominent beneficial effect.
One, is used difference amplifier to realize temperature-compensating, can be realized by the amplification adjusting difference amplifier
Ideal effect temperature compensation.
Its two, difference amplifier itself has more preferable PSRR, thus greatly strengthen and resist reference voltage
The impact of Vreg change.
Its three, the biasing circuit of the application only has one-level differential amplification structure, and biasing circuit not existence and stability itself is asked
Topic.Comprehensive above 3 points, compared with existing radio-frequency power amplifier biasing circuit, the application can substantially reduce temperature
Sensitivity, improves the linearity of radio-frequency power amplifier, so that radio-frequency power amplifier can be at the most severe work bar
Normal operating conditions is kept under part and environment.
These are only the preferred embodiment of the application, be not used to limit the application.Those skilled in the art is come
Saying, the application can have various modifications and variations.All within spirit herein and principle, any amendment of being made, equivalent
Replacement, improvement etc., within should be included in the protection domain of the application.
Claims (10)
1. a radio-frequency power amplifier biasing circuit, is characterized in that, described biasing circuit includes being made up of two audions
Difference amplifier, difference amplifier is using the base stage of the two audion as differential input end, with the collection of one of them audion
Electrode is as Single-end output end；
Described biasing circuit also includes active matrix driving pipe, and the base stage of described active matrix driving pipe receives the Single-end output of difference amplifier
The voltage of end provides base bias current as input, the transmitting extremely power tube of described active matrix driving pipe；
Two dividing potential drop branch roads are respectively two the audions offer base voltages constituting difference amplifier, and when variations in temperature
The base voltage of two audions of described composition difference amplifier changes in the opposite direction.
Radio-frequency power amplifier biasing circuit the most according to claim 1, is characterized in that, constitutes two of difference amplifier
The emitter stage of audion is connected and passes through a current source ground connection.
Radio-frequency power amplifier biasing circuit the most according to claim 2, is characterized in that, described current source includes resistance
Seven, audion five and audion six；The emitter stage of two audions constituting difference amplifier is connected and passes through audion six and connects
Ground；
The base stage of audion five and colelctor electrode short circuit；The branch road being composed in series by resistance seven and audion five is equivalent to an electric current
Source；The base stage of the base stage connecting triode six of audion five；Audion six is equivalent to a mirror current source.
Radio-frequency power amplifier biasing circuit the most according to claim 1, is characterized in that, constitutes two of difference amplifier
Three resistance eutral groundings that the emitter stage of audion is connected by Y type.
Radio-frequency power amplifier biasing circuit the most according to claim 1, is characterized in that,
In a dividing potential drop branch road, from reference voltage, the direction toward ground has been sequentially connected in series resistance one, diode one and resistance two, and two
The negative electrode of pole pipe one provides base voltage for the audion constituting difference amplifier；
In another dividing potential drop branch road, from reference voltage, the direction toward ground has been sequentially connected in series resistance five, diode two and resistance six,
The anode of diode two provides base voltage for another audion constituting difference amplifier.
Radio-frequency power amplifier biasing circuit the most according to claim 1, is characterized in that,
In a dividing potential drop branch road, from reference voltage, the direction toward ground has been sequentially connected in series resistance one, audion five and resistance two, and three
The base stage of pole pipe five and colelctor electrode short circuit, the transmitting of audion five extremely constitutes an audion of difference amplifier provides base stage
Voltage；
In another dividing potential drop branch road, from reference voltage, the direction toward ground has been sequentially connected in series resistance eight, audion six and resistance nine,
The base stage of audion six and colelctor electrode short circuit, the current collection of audion six extremely constitutes another audion of difference amplifier to be provided
Base voltage.
Radio-frequency power amplifier biasing circuit the most according to claim 1, is characterized in that,
In a dividing potential drop branch road, from reference voltage, the direction toward ground has been sequentially connected in series resistance one, diode one and resistance two, and two
The negative electrode of pole pipe one provides base voltage for the audion constituting difference amplifier；In another dividing potential drop branch road, from ginseng
The direction examining the past ground of voltage has been sequentially connected in series resistance eight, audion six and resistance nine, the base stage of audion six and colelctor electrode short circuit,
The current collection of audion six extremely constitutes another audion of difference amplifier provides base voltage；
Or, in a dividing potential drop branch road, from reference voltage, the direction toward ground has been sequentially connected in series resistance one, audion five and resistance
Two, the base stage of audion five and colelctor electrode short circuit, the transmitting of audion five extremely constitutes an audion of difference amplifier and carries
For base voltage；In another dividing potential drop branch road, from reference voltage, the direction toward ground has been sequentially connected in series resistance five, diode two and
Resistance six, the anode of diode two provides base voltage for another audion constituting difference amplifier.
Radio-frequency power amplifier biasing circuit the most according to claim 1, is characterized in that, described biasing circuit also includes electricity
Rong Yi, between Single-end output end and the ground of difference amplifier, for linearisation effect.
Radio-frequency power amplifier biasing circuit the most according to any one of claim 1 to 8, is characterized in that, described three poles
Pipe uses heterojunction bipolar transistor and/or mos field effect transistor.
10. an implementation method for radio-frequency power amplifier biasing circuit, is characterized in that, when the temperature varies, and two points
Pressure branch road is respectively the base voltage of two the audions offers constituting difference amplifier and produces change in opposite direction, by two
The voltage of the Single-end output end of the difference amplifier that audion is formed declines；This makes the voltage of active matrix driving pipe also followed by
Decline, and the base bias current being supplied to power tube is changed towards the direction compensating variations in temperature.
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| CN201610482039.0A CN106208980B (en) | 2016-06-27 | 2016-06-27 | A kind of radio-frequency power amplifier biasing circuit and its implementation |
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| CN107196613A (en) * | 2017-04-17 | 2017-09-22 | 锐迪科微电子（上海）有限公司 | A kind of power amplifier for realizing overvoltage protection |
| CN110011622A (en) * | 2019-04-15 | 2019-07-12 | 厦门雷迅科微电子股份有限公司 | A kind of biasing circuit of radio-frequency power amplifier |
| CN110620581A (en) * | 2019-10-10 | 2019-12-27 | 上海磐启微电子有限公司 | Crystal-free voltage-controlled oscillator for restraining temperature drift of radio frequency transceiving system |
| CN110771034A (en) * | 2017-06-30 | 2020-02-07 | 上海诺基亚贝尔股份有限公司 | Power amplifying circuit for time division duplex mode |
| CN111200407A (en) * | 2020-01-19 | 2020-05-26 | 广州慧智微电子有限公司 | Signal amplification circuit and active bias circuit |
| CN112671400A (en) * | 2020-12-11 | 2021-04-16 | 苏州裕太微电子有限公司 | Enabling control circuit of voltage-controlled/digital controlled oscillator |
| CN112803900A (en) * | 2021-03-30 | 2021-05-14 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
| CN113922770A (en) * | 2021-12-14 | 2022-01-11 | 深圳市时代速信科技有限公司 | Bias control circuit and electronic equipment |
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| CN111200407B (en) * | 2020-01-19 | 2023-05-02 | 广州慧智微电子股份有限公司 | Signal amplifying circuit and active bias circuit |
| CN112671400A (en) * | 2020-12-11 | 2021-04-16 | 苏州裕太微电子有限公司 | Enabling control circuit of voltage-controlled/digital controlled oscillator |
| CN112803900A (en) * | 2021-03-30 | 2021-05-14 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
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| CN113922770A (en) * | 2021-12-14 | 2022-01-11 | 深圳市时代速信科技有限公司 | Bias control circuit and electronic equipment |
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