CN106208980B - A kind of radio-frequency power amplifier biasing circuit and its implementation - Google Patents
A kind of radio-frequency power amplifier biasing circuit and its implementation Download PDFInfo
- Publication number
- CN106208980B CN106208980B CN201610482039.0A CN201610482039A CN106208980B CN 106208980 B CN106208980 B CN 106208980B CN 201610482039 A CN201610482039 A CN 201610482039A CN 106208980 B CN106208980 B CN 106208980B
- Authority
- CN
- China
- Prior art keywords
- triode
- difference amplifier
- voltage
- resistance
- radio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
Abstract
This application discloses a kind of radio-frequency power amplifier biasing circuits, the biasing circuit includes the difference amplifier being made of two triodes, difference amplifier is using the base stage of the two triodes as differential input end, using the collector of one of triode as Single-end output end；The biasing circuit further includes active matrix driving pipe, and the base stage of the active matrix driving pipe receives the voltage at the Single-end output end of difference amplifier as input, and the transmitting of the active matrix driving pipe extremely power tube provides base bias current；Two partial pressure branches are respectively the two triodes offer base voltage for constituting difference amplifier, and the base voltage of two triodes for constituting difference amplifier changes in the opposite direction in temperature change.The application can be substantially reduced the susceptibility to temperature change, improve the linearity of radio-frequency power amplifier, so that radio-frequency power amplifier be enable to keep normal operating conditions under more severe operating condition and environment.
Description
Technical field
This application involves a kind of biasing circuits of radio-frequency power amplifier.
Background technique
In RF receiving circuit, radio-frequency front-end (RF front end) is often referred to antenna to all electricity between frequency mixer
Road, for the received radiofrequency signal of antenna is converted to the lower intermediate-freuqncy signal of frequency.By taking the receiver of super-heterodyne architecture as an example,
Radio-frequency front-end generally includes bandpass filter, radio-frequency power amplifier, local oscillator, frequency mixer, it is also possible to turn including modulus
Parallel operation.
In RF front-end circuit, radio-frequency power amplifier is one of most important device, and the maximum device of energy consumption.
When work, radio-frequency power amplifier can generate a large amount of heat, and temperature also increases.Due to PN junction characteristic, in forward voltage drop
Forward current increases with the raising of temperature when constant.Therefore radio-frequency power amplifier electric current increase with the raising of temperature increases
Big electric current generates more heat, so that the temperature of radio-frequency power amplifier further increases, thus enters vicious circle.It is this
In the case of, radio-frequency power amplifier even can deviate normal working point, influence its stability.High linearity (high
Linearity radio-frequency power amplifier) is since efficiency is lower, thus above-mentioned phenomenon is more obvious.
In order to overcome above-mentioned phenomenon, it is necessary to a kind of radio-frequency power amplifier biasing circuit with temperature compensation function.
Referring to Fig. 1, this is a kind of existing radio-frequency power amplifier and its biasing circuit, dashed rectangle part therein is biased electrical
Road.The radio-frequency power amplifier mainly includes that four Q4 of triode is also referred to as power tube, and collector connects power supply by one L1 of inductance
Voltage Vsup, emitter ground connection, base stage pass through two C2 connection RF signal input end RFin of capacitor.The biasing circuit master
It to include three triodes, therefore the base stage of two Q2 of one Q1 of triode and triode, which is shorted with collector, to be made as diode
With three Q3 of triode is also referred to as active matrix driving pipe and is used to provide base bias current for power tube Q4.On reference voltage Vreg and ground
Between be in series with two Q2 of one R1 of resistance, one Q1 of triode and triode, one Q1 of triode and two Q2 of triode therein play temperature
Spend compensating action.Concatenated one Q1 of triode and two Q2 of triode are in parallel with one C1 of capacitor, and one C1 of capacitor is mainly linear to be turned into
With.Tie point between base stage connection one R1 of resistance and one C1 of capacitor of active matrix driving pipe Q3, collector pass through two R2 of resistance
Supply voltage Vsup is connected, emitter passes through the base stage of three R3 connection power tube Q4 of resistance.Each triode, such as be all made of
Heterojunction bipolar transistor (HBT).More contents of this radio-frequency power amplifier and its biasing circuit can refer to 2002
" the PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed that September is published
Linearizing bias circuit " text, author is Youn Sub Noh and Chul Soon Park, is published in " IEEE
Journal of Solid-State Circuits " phase of volume 37 9.
Radio-frequency power amplifier biasing circuit shown in FIG. 1 is easy to use, but is primarily present two problems.First, only
When four triode Q1 to Q4 have identical temperature environment and operating condition, just it is able to achieve ideal temperature and mends
Repay effect.This cannot achieve in practical applications, can only achieve the effect temperature compensation of fraction in practical application.
Second, this biasing circuit is very sensitive to the variation of reference voltage Vreg.When reference voltage Vreg changes, power tube
The base bias current of Q4 can change a lot.
Publication No. CN1373626A, the Chinese invention patent application that publication date is on October 9th, 2002 disclose one kind
Bias control circuit, for controlling the bias current of high frequency power amplifier according to the control voltage of input.Including hair
The difference amplifier that two connected triodes of emitter-base bandgap grading are constituted only is used to provide the gain amplification of control voltage, does not play temperature
Compensating action.
Publication No. CN101478293A, the Chinese invention patent application that publication date is on July 8th, 2009 disclose one kind
Power amplifier with temperature-compensating.Including the difference pipe that two triodes that emitter is connected are constituted, and only use
Operational amplifier function is provided, temperature compensation function is not played.
Summary of the invention
The technical problem to be solved by the application is to provide a kind of biasing circuits of radio-frequency power amplifier, can obviously drop
The low sensibility changed for temperature change and/or reference voltage, so that radio-frequency power amplifier steady operation.For this purpose, this Shen
It please also provide the method that the biasing circuit realizes temperature-compensating.
In order to solve the above technical problems, the application radio-frequency power amplifier biasing circuit includes being made of two triodes
Difference amplifier, difference amplifier is using the base stage of the two triodes as differential input end, with the collection of one of triode
Electrode is as Single-end output end；The biasing circuit further includes active matrix driving pipe, and the base stage of the active matrix driving pipe receives difference
The voltage at the Single-end output end of amplifier provides base bias electricity as input, the transmitting of the active matrix driving pipe extremely power tube
Stream；Two partial pressure branches are respectively the two triodes offer base voltage for constituting difference amplifier, and in temperature change
The base voltage of two triodes for constituting difference amplifier changes in the opposite direction.
There are two types of implementations for the differential amplification implement body.The first is achieved in that: constituting the two of difference amplifier
The emitter of a triode is connected and passes through a current source ground connection.This implementation is specifically, for example: constituting differential amplification
The emitter of two triodes of device, which is connected and passes through triode six, to be grounded；The base stage and collector of triode five are shorted；By electricity
The branch that resistance seven and triode five are composed in series is equivalent to a current source；The base of the base stage connecting triode six of triode five
Pole；Triode six is equivalent to a mirror current source.It is achieved in that for second: constituting two triodes of difference amplifier
Three resistance eutral groundings that emitter is connected by Y type.
There are four types of implementations for the partial pressure branch tool.The first is achieved in that: in a partial pressure branch, from reference
The direction on voltage toward ground has been sequentially connected in series resistance one, diode one and resistance two, and the cathode of diode one is to constitute differential amplification
One triode of device provides base voltage；In another partial pressure branch, the direction from reference voltage toward ground has been sequentially connected in series
Resistance five, diode two and resistance six, the anode of diode two provide base stage to constitute another triode of difference amplifier
Voltage.Be achieved in that for second: in a partial pressure branch, the direction from reference voltage toward ground be sequentially connected in series resistance one,
Triode five and resistance two, the base stage and collector of triode five are shorted, and the transmitting of triode five extremely constitutes difference amplifier
A triode provide base voltage；In another partial pressure branch, the direction from reference voltage toward ground has been sequentially connected in series electricity
Resistance eight, triode six and resistance nine, the base stage and collector of triode six are shorted, and the current collection of triode six extremely constitutes difference and puts
Another triode of big device provides base voltage.By the partial pressure branch combined crosswise in both the above implementation, just constitute
The third and the 4th kind of implementation.
Further, the biasing circuit further includes capacitor one, between the Single-end output end of difference amplifier and ground, is used
It is acted in linearisation.
Further, the triode is brilliant using heterojunction bipolar transistor and/or metal oxide semiconductor field-effect
Body pipe.
The implementation method of the application radio-frequency power amplifier biasing circuit is: when the temperature varies, two partial pressure branch
Road is respectively that the base voltage for the two triodes offer for constituting difference amplifier generates contrary variation, by two three poles
The voltage decline at the Single-end output end of difference amplifier composed by managing；This is followed by down the voltage of active matrix driving pipe also
Drop, and the base bias current for being supplied to power tube is changed towards to the direction that temperature change compensates.
What the application obtained has the technical effect that the susceptibility that can be substantially reduced to temperature change, improves radio-frequency power amplification
The linearity of device, so that radio-frequency power amplifier be enable to keep working normally shape under more severe operating condition and environment
State.
Detailed description of the invention
Fig. 1 is the schematic diagram of a kind of existing radio-frequency power amplifier and biasing circuit.
Fig. 2 is the schematic diagram of the radio-frequency power amplifier of the application and the embodiment one of biasing circuit.
Fig. 3 is the schematic diagram of the radio-frequency power amplifier of the application and the embodiment two of biasing circuit.
Fig. 4 is the schematic diagram of the radio-frequency power amplifier of the application and the embodiment three of biasing circuit.
Fig. 5 is the schematic diagram of the radio-frequency power amplifier of the application and the example IV of biasing circuit.
Description of symbols in figure: indicate that natural number, Qx are triode with x；Lx is inductance；Cx is capacitor；Rx is resistance；
Vsup is supply voltage；Vreg is reference voltage；RFin is RF signal input end.
Specific embodiment
Referring to Fig. 2, this is the radio-frequency power amplifier of the application and its embodiment one of biasing circuit, dotted line therein
Blocked portion is biasing circuit.The radio-frequency power amplifier mainly includes that four Q4 of triode is also referred to as power tube, and collector is logical
It crosses one L1 of inductance and meets supply voltage Vsup, emitter ground connection, base stage passes through two C2 connection RF signal input end of capacitor
RFin.The collector of power tube Q4 is also used as RF signal output (not shown).The biasing circuit mainly includes five three
Pole pipe and two diodes.One R1 of resistance, one D1 of diode and the resistance that direction from reference voltage Vreg toward ground is sequentially connected in series
Two R2 constitute the first partial pressure branch, and the cathode of one D1 of diode is known as one V1 of bias point and is used to provide base stage for one Q1 of triode
Bias voltage.Five R5 of resistance, two D2 of diode and six R6 of resistance that direction from reference voltage Vreg toward ground is sequentially connected in series are constituted
Second partial pressure branch, the anode of two D2 of diode be known as two V2 of bias point be used to provide base bias for triode two Q2 it is electric
Pressure.One Q1 of triode and two Q2 of triode constitute difference amplifier, their base stage is respectively with one V1 of bias point and bias point
The voltage of two V2 is as input, their emitter is connected and the collector of six Q6 of connecting triode.The current collection of one Q1 of triode
Output point Vo of the pole as the Single-end output of difference amplifier.The collector of one Q1 of triode also passes through three R3 connection of resistance reference
Voltage Vreg.The collector of two Q2 of triode also passes through four R4 connection reference voltage Vreg of resistance.The base stage of five Q5 of triode with
Therefore collector is shorted to be used as diode, collector is connect by seven R7 connection reference voltage Vreg of resistance, emitter
Ground, the base stage of six Q6 of base stage connecting triode.The emitter of six Q6 of triode is grounded.Three Q3 of triode is also referred to as active matrix driving
Pipe, for providing base bias current for power tube Q4.The base stage of active matrix driving pipe Q3 connects output point Vo and with output point Vo
Voltage as input, for collector by eight R8 connection supply voltage Vsup of resistance, emitter passes through nine R9 connection of resistance
The base stage of power tube Q4 is to provide base bias current for power tube Q4.Capacitor one is also connected between output point Vo and ground
Mainly linearization acts on by C1, one C1 of capacitor.Each triode, it is preferred to use heterojunction bipolar transistor (HBT) can also be used
Metal oxide semiconductor field effect tube (MOSFET).
In above-described embodiment one, seven R7 of resistance connects with five Q5 of triode used as diode and constitutes an electric current
Source, and six Q6 of triode is mirror current source.It is alternatively possible to the series arm of seven R7 of resistance and five Q5 of triode is deleted,
Six Q6 of triode is replaced with into a current source simultaneously.
The working principle of above-described embodiment one is: when the temperature increases, the forward voltage drop of diode reduces, therefore bias point
The voltage of one V1 increases, and the voltage of two V2 of bias point reduces.The differential amplification as composed by two Q2 of one Q1 of triode and triode
The voltage of device, output point Vo will decline A × (V1-V2), and wherein A is the amplification factor of difference amplifier.This makes active drive
The base voltage of dynamic pipe Q3 is also followed by decline, and the base bias current for being supplied to power tube Q4 is reduced, thus to temperature
Degree is increased and is compensated.Similarly, upon a drop in temperature, the base voltage of active matrix driving pipe Q3 will rise, and to be supplied to
The base bias current of power tube Q4 increases, to be compensated temperature decline.By selecting suitable device parameters can
To adjust the amplification factor of difference amplifier, to can just compensation temperature become for the base bias current that power tube Q4 is provided
The influence of change makes power tube Q4 that can always be biased in required operating point.
Referring to Fig. 3, this is the radio-frequency power amplifier of the application and its embodiment two of biasing circuit, dotted line therein
Blocked portion is biasing circuit.The radio-frequency power amplifier mainly includes that four Q4 of triode is also referred to as power tube, and collector is logical
It crosses one L1 of inductance and meets supply voltage Vsup, emitter ground connection, base stage passes through two C2 connection RF signal input end of capacitor
RFin.The collector of power tube Q4 is also used as RF signal output (not shown).The biasing circuit mainly includes five three
Pole pipe, the base stage of five Q5 of triode and six Q6 of triode therein are shorted with collector and therefore use as diode.From
One R1 of resistance, five Q5 of triode and two R2 of resistance that the direction on reference voltage Vreg toward ground is sequentially connected in series constitute the first partial pressure branch
Road, the emitter of five Q5 of triode are known as one V1 of bias point and are used to provide base bias voltage for one Q1 of triode.From reference electricity
Direction eight R8 of resistance, six Q6 of triode and nine R9 of resistance that are sequentially connected in series on pressure Vreg toward ground constitute the second partial pressure branch, and three
The collector of six Q6 of pole pipe is known as two V2 of bias point and is used to provide base bias voltage for two Q2 of triode.Triode one Q1 and three
Two Q2 of pole pipe constitutes difference amplifier, their base stage is respectively using the voltage of two V2 of one V1 of bias point and bias point as defeated
Enter, the output point Vo of the collector of one Q1 of triode as the Single-end output of difference amplifier.The collector of one Q1 of triode is also
By three R3 connection reference voltage Vreg of resistance, emitter also passes through concatenated five R5 of resistance and seven R7 of resistance ground connection.Three poles
The collector of two Q2 of pipe also passes through four R4 connection reference voltage Vreg of resistance, and emitter also passes through concatenated six R6 of resistance and electricity
Hinder seven R7 ground connection.Three Q3 of triode is also referred to as active matrix driving pipe, for providing base bias current for power tube Q4.Active matrix driving pipe
The base stage of Q3 connects output point Vo and using the voltage of output point Vo as input, and collector passes through ten R10 connection power supply of resistance
Voltage Vsup, emitter provide base bias by the base stage of 11 R11 connection power tube Q4 of resistance for power tube Q4
Electric current.One C1 of capacitor is also connected between output point Vo and ground, mainly linearization acts on one C1 of capacitor.Each triode,
It is preferred that using heterojunction bipolar transistor, metal oxide semiconductor field effect tube can also be used.
Comparing embodiment one and embodiment two are it can be found that the two mainly has following two difference.
It is the structure of difference amplifier first.The emitter of two triodes of the composition difference amplifier in embodiment one
It is grounded after being all connected with the same current source.The series arm of seven R7 of resistance and five Q5 of triode, six Q6 of triode may be regarded as electric current
A kind of specific implementation in source.The emitter of two triodes of difference amplifier is constituted in embodiment two to be connected by Y type
Three resistance eutral groundings connect.Difference amplifier in the two embodiments is functionally no difference.
Followed by divide the structure of branch.Two partial pressure branches in embodiment one are all made of diode.In embodiment two
Two partial pressure branches be all made of the triode that base stage and collector are shorted, be equivalent to diode.Using special connection relationship
Triode come replace diode can with the triode of other in circuit have essentially identical temperature characterisitic and device property,
Realize that effect when temperature-compensating may be more preferable.Optionally, diode can also be used in a partial pressure branch, at another point
Press the triode being shorted in branch using base stage and collector.
The working principle of above-described embodiment two is: when the temperature increases, the current collection for the triode that base stage is connected with collector
Pole-emitter voltage reduces, therefore the voltage of one V1 of bias point increases, and the voltage of two V2 of bias point reduces.By one Q1 of triode
A × (V1-V2) will be declined with the voltage of difference amplifier composed by two Q2 of triode, output point Vo, wherein A is put for difference
The amplification factor of big device.This makes the voltage of active matrix driving pipe Q3 also be followed by decline, and makes the base for being supplied to power tube Q4
Pole bias current reduces, to be compensated temperature raising.Similarly, upon a drop in temperature, the voltage of active matrix driving pipe Q3
It will rise, and the base bias current for being supplied to power tube Q4 is increased, to be compensated temperature decline.Pass through choosing
The amplification factor of the adjustable difference amplifier of suitable device parameters is selected, thus the base bias current provided for power tube Q4
Can just compensation temperature variation influence, make power tube Q4 that can always be biased in required operating point.
Referring to Fig. 4, this is the radio-frequency power amplifier of the application and its embodiment three of biasing circuit, dotted line therein
Blocked portion is biasing circuit.Embodiment three may be regarded as the differential amplifier arrangements in embodiment one and the partial pressure in embodiment two
The combination of circuit structure.The radio-frequency power amplifier mainly includes that four Q4 of triode is also referred to as power tube, and collector passes through electricity
Feel a L1 and meet supply voltage Vsup, emitter ground connection, base stage passes through two C2 connection RF signal input end RFin of capacitor.Function
The collector of rate pipe Q4 is also used as RF signal output (not shown).The biasing circuit mainly includes seven triodes,
In eight Q8 of five Q5 of triode, seven Q7 of triode and triode base stage with collector be shorted therefore make as diode
With.One R1 of resistance, seven Q7 of triode and two R2 of resistance that direction from reference voltage Vreg toward ground is sequentially connected in series constitute first
Branch is divided, the emitter of seven Q7 of triode is known as one V1 of bias point and is used to provide base bias voltage for one Q1 of triode.From
Five R5 of resistance, eight Q8 of triode and six R6 of resistance that the direction on reference voltage Vreg toward ground is sequentially connected in series constitute the second partial pressure branch
Road, the collector of eight Q8 of triode are known as two V2 of bias point and are used to provide base bias voltage for two Q2 of triode.Triode one
Q1 and two Q2 of triode constitute difference amplifier, their base stage is made respectively with the voltage of two V2 of one V1 of bias point and bias point
For input, their emitter is connected and the collector of six Q6 of connecting triode, the collector of one Q1 of triode are put as difference
The output point Vo of the Single-end output of big device.The collector of one Q1 of triode also passes through three R3 connection reference voltage Vreg of resistance.Three
The collector of two Q2 of pole pipe also passes through four R4 connection reference voltage Vreg of resistance.The collector of five Q5 of triode passes through seven R7 of resistance
Connect reference voltage Vreg, emitter ground connection, the base stage of six Q6 of base stage connecting triode.The emitter of six Q6 of triode connects
Ground.Three Q3 of triode is also referred to as active matrix driving pipe, for providing base bias current for power tube Q4.The base stage of active matrix driving pipe Q3
Connect output point Vo and using the voltage of output point Vo as input, collector pass through eight R8 connection supply voltage Vsup of resistance,
Its emitter provides base bias current by the base stage of nine R9 connection power tube Q4 of resistance for power tube Q4.In output point
One C1 of capacitor is also connected between Vo and ground, mainly linearization acts on one C1 of capacitor.Each triode, it is preferred to use hetero-junctions
Metal oxide semiconductor field effect tube can also be used in bipolar transistor.
In above-described embodiment three, seven R7 of resistance connects with five Q5 of triode used as diode and constitutes an electric current
Source, and six Q6 of triode is mirror current source.It is alternatively possible to the series arm of seven R7 of resistance and five Q5 of triode is deleted,
Six Q6 of triode is replaced with into a current source simultaneously.
The working principle of above-described embodiment three is: when the temperature increases, the current collection for the triode that base stage is connected with collector
Pole-emitter voltage reduces, therefore the voltage of one V1 of bias point increases, and the voltage of two V2 of bias point reduces.By one Q1 of triode
A × (V1-V2) will be declined with the voltage of difference amplifier composed by two Q2 of triode, output point Vo, wherein A is put for difference
The amplification factor of big device.This makes the voltage of active matrix driving pipe Q3 also be followed by decline, and makes the base for being supplied to power tube Q4
Pole bias current reduces, to be compensated temperature raising.Similarly, upon a drop in temperature, the voltage of active matrix driving pipe Q3
It will rise, and the base bias current for being supplied to power tube Q4 is increased, to be compensated temperature decline.Pass through choosing
The amplification factor of the adjustable difference amplifier of suitable device parameters is selected, thus the base bias current provided for power tube Q4
Can just compensation temperature variation influence, make power tube Q4 that can always be biased in required operating point.
Referring to Fig. 5, this is the radio-frequency power amplifier of the application and its example IV of biasing circuit, dotted line therein
Blocked portion is biasing circuit.Example IV may be regarded as the differential amplifier arrangements in embodiment two and the partial pressure in embodiment one
The combination of circuit structure.The radio-frequency power amplifier mainly includes that four Q4 of triode is also referred to as power tube, and collector passes through electricity
Feel a L1 and meet supply voltage Vsup, emitter ground connection, base stage passes through two C2 connection RF signal input end RFin of capacitor.Function
The collector of rate pipe Q4 is also used as RF signal output (not shown).The biasing circuit mainly includes three triodes and two
A diode.One R1 of resistance, one D1 of diode and two R2 of resistance that direction from reference voltage Vreg toward ground is sequentially connected in series are constituted
First partial pressure branch, the cathode of one D1 of diode be known as one V1 of bias point be used to provide base bias for triode one Q1 it is electric
Pressure.Eight R8 of resistance, two D2 of diode and nine R9 of resistance that direction from reference voltage Vreg toward ground is sequentially connected in series constitute second
Branch is divided, the anode of two D2 of diode is known as two V2 of bias point and is used to provide base bias voltage for two Q2 of triode.Three poles
One Q1 of pipe and two Q2 of triode constitute difference amplifier, their base stage is respectively with the electricity of two V2 of one V1 of bias point and bias point
Pressure is as input, the output point Vo of the collector of one Q1 of triode as the Single-end output of difference amplifier.One Q1's of triode
Collector also passes through three R3 connection reference voltage Vreg of resistance, and emitter also passes through concatenated five R5 of resistance and seven R7 of resistance connects
Ground.The collector of two Q2 of triode also passes through four R4 connection reference voltage Vreg of resistance, and emitter also passes through concatenated resistance
Six R6 and seven R7 of resistance ground connection.Three Q3 of triode is also referred to as active matrix driving pipe, for providing base bias current for power tube Q4.Have
The base stage of source driving tube Q3 connects output point Vo and using the voltage of output point Vo as input, and collector passes through ten R10 of resistance
Supply voltage Vsup is connected, emitter is provided by the base stage of 11 R11 connection power tube Q4 of resistance for power tube Q4
Base bias current.One C1 of capacitor is also connected between output point Vo and ground, mainly linearization acts on one C1 of capacitor.It is each
Triode, it is preferred to use metal oxide semiconductor field effect tube can also be used in heterojunction bipolar transistor.
The working principle of above-described embodiment four is: when the temperature increases, the forward voltage drop of diode reduces, therefore bias point
The voltage of one V1 increases, and the voltage of two V2 of bias point reduces.The differential amplification as composed by two Q2 of one Q1 of triode and triode
The voltage of device, output point Vo will decline A × (V1-V2), and wherein A is the amplification factor of difference amplifier.This makes active drive
The base voltage of dynamic pipe Q3 is also followed by decline, and the base bias current for being supplied to power tube Q4 is reduced, thus to temperature
Degree is increased and is compensated.Similarly, upon a drop in temperature, the base voltage of active matrix driving pipe Q3 will rise, and to be supplied to
The base bias current of power tube Q4 increases, to be compensated temperature decline.By selecting suitable device parameters can
To adjust the amplification factor of difference amplifier, to can just compensation temperature become for the base bias current that power tube Q4 is provided
The influence of change makes power tube Q4 that can always be biased in required operating point.
In summary each embodiment it is found that the radio-frequency power amplifier of the application biasing circuit and prior art phase
Than having following beneficial effect outstanding.
First, realizing temperature-compensating using difference amplifier, may be implemented by adjusting the amplification factor of difference amplifier
Ideal effect temperature compensation.
Second, difference amplifier itself has better power supply rejection ratio, thus greatly strengthens and resist reference voltage
The influence of Vreg variation.
Third, the biasing circuit of the application only has level-one differential amplification structure, there is no stability to ask for biasing circuit itself
Topic.In summary 3 points, compared with existing radio-frequency power amplifier biasing circuit, the application can be substantially reduced to temperature
Susceptibility, improves the linearity of radio-frequency power amplifier, to enable radio-frequency power amplifier in more severe work item
Normal operating conditions is kept under part and environment.
The above is only preferred embodiment of the present application, it is not used to limit the application.Come for those skilled in the art
It says, various changes and changes are possible in this application.Within the spirit and principles of this application, made any modification, equivalent
Replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of radio-frequency power amplifier biasing circuit, characterized in that the biasing circuit includes being made of two triodes
Difference amplifier, difference amplifier is using the base stage of the two triodes as differential input end, with the collection of one of triode
Electrode is as Single-end output end；
The biasing circuit further includes active matrix driving pipe, and the base stage of the active matrix driving pipe receives the Single-end output of difference amplifier
The voltage at end provides base bias current as input, the transmitting of the active matrix driving pipe extremely power tube；
Diode cathode in one partial pressure branch provides base voltage to constitute a triode of difference amplifier, and another
Diode anode in partial pressure branch provides base voltage to constitute another triode of difference amplifier, and becomes in temperature
The base voltage of two triodes for constituting difference amplifier changes in the opposite direction when change；
Alternatively, the triode that the diode is changed to base stage and collector is shorted.
2. radio-frequency power amplifier biasing circuit according to claim 1, characterized in that constitute two of difference amplifier
The emitter of triode is connected and passes through a current source ground connection.
3. radio-frequency power amplifier biasing circuit according to claim 2, characterized in that the current source includes resistance
Seven, triode five and triode six；The emitter for constituting two triodes of difference amplifier, which is connected and passes through triode six, to be connect
Ground；
The base stage and collector of triode five are shorted；One electric current is equivalent to by the branch that resistance seven and triode five are composed in series
Source；The base stage of the base stage connecting triode six of triode five；Triode six is equivalent to a mirror current source.
4. radio-frequency power amplifier biasing circuit according to claim 1, characterized in that constitute two of difference amplifier
Three resistance eutral groundings that the emitter of triode is connected by Y type.
5. radio-frequency power amplifier biasing circuit according to claim 1, characterized in that
In a partial pressure branch, the direction from reference voltage toward ground has been sequentially connected in series resistance one, diode one and resistance two, and two
The cathode of pole pipe one provides base voltage to constitute a triode of difference amplifier；
In another partial pressure branch, the direction from reference voltage toward ground has been sequentially connected in series resistance five, diode two and resistance six,
The anode of diode two provides base voltage to constitute another triode of difference amplifier.
6. radio-frequency power amplifier biasing circuit according to claim 1, characterized in that
In a partial pressure branch, the direction from reference voltage toward ground has been sequentially connected in series resistance one, triode five and resistance two, and three
The base stage and collector of pole pipe five are shorted, and the triode that the transmitting of triode five extremely constitutes difference amplifier provides base stage
Voltage；
In another partial pressure branch, the direction from reference voltage toward ground has been sequentially connected in series resistance eight, triode six and resistance nine,
The base stage and collector of triode six are shorted, another triode that the current collection of triode six extremely constitutes difference amplifier provides
Base voltage.
7. radio-frequency power amplifier biasing circuit according to claim 1, characterized in that
In a partial pressure branch, the direction from reference voltage toward ground has been sequentially connected in series resistance one, diode one and resistance two, and two
The cathode of pole pipe one provides base voltage to constitute a triode of difference amplifier；In another partial pressure branch, from ginseng
The direction for examining voltage toward ground has been sequentially connected in series resistance eight, triode six and resistance nine, and the base stage and collector of triode six are shorted,
Another triode that the current collection of triode six extremely constitutes difference amplifier provides base voltage；
Alternatively, the direction from reference voltage toward ground has been sequentially connected in series resistance one, triode five and resistance in a partial pressure branch
Two, the base stage and collector of triode five are shorted, and the triode that the transmitting of triode five extremely constitutes difference amplifier mentions
For base voltage；In another partial pressure branch, the direction from reference voltage toward ground has been sequentially connected in series resistance five, two and of diode
Resistance six, the anode of diode two provide base voltage to constitute another triode of difference amplifier.
8. radio-frequency power amplifier biasing circuit according to claim 1, characterized in that the biasing circuit further includes electricity
Rong Yi is acted between the Single-end output end of difference amplifier and ground for linearisation.
9. radio-frequency power amplifier biasing circuit according to any one of claim 1 to 8, characterized in that three pole
Pipe uses heterojunction bipolar transistor and/or Metal Oxide Semiconductor Field Effect Transistor.
10. a kind of implementation method of radio-frequency power amplifier biasing circuit, characterized in that the diode yin in a partial pressure branch
A triode for extremely constituting difference amplifier provides base voltage, and the diode anode in another partial pressure branch is to constitute
Another triode of difference amplifier provides base voltage；Alternatively, the diode is changed to the three of base stage and collector short circuit
Pole pipe；When the temperature varies, two partial pressure branches are respectively the base stage for constituting two triodes of difference amplifier and providing
Voltage generates contrary variation, the voltage decline at the Single-end output end of the difference amplifier as composed by two triodes；
This makes the voltage of active matrix driving pipe also be followed by decline, and makes the base bias current for being supplied to power tube towards to temperature
Change the direction compensated to change.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610482039.0A CN106208980B (en) | 2016-06-27 | 2016-06-27 | A kind of radio-frequency power amplifier biasing circuit and its implementation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610482039.0A CN106208980B (en) | 2016-06-27 | 2016-06-27 | A kind of radio-frequency power amplifier biasing circuit and its implementation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106208980A CN106208980A (en) | 2016-12-07 |
| CN106208980B true CN106208980B (en) | 2018-12-07 |
Family
ID=57462235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610482039.0A Active CN106208980B (en) | 2016-06-27 | 2016-06-27 | A kind of radio-frequency power amplifier biasing circuit and its implementation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106208980B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107196613A (en) * | 2017-04-17 | 2017-09-22 | 锐迪科微电子（上海）有限公司 | A kind of power amplifier for realizing overvoltage protection |
| CN110771034B (en) * | 2017-06-30 | 2023-11-10 | 上海诺基亚贝尔股份有限公司 | Power amplifying circuit for time division duplex mode |
| CN110011622B (en) * | 2019-04-15 | 2023-02-07 | 厦门雷迅科微电子股份有限公司 | Bias circuit of radio frequency power amplifier |
| CN110620581A (en) * | 2019-10-10 | 2019-12-27 | 上海磐启微电子有限公司 | Crystal-free voltage-controlled oscillator for restraining temperature drift of radio frequency transceiving system |
| CN111200407B (en) * | 2020-01-19 | 2023-05-02 | 广州慧智微电子股份有限公司 | Signal amplifying circuit and active bias circuit |
| CN112671400A (en) * | 2020-12-11 | 2021-04-16 | 苏州裕太微电子有限公司 | Enabling control circuit of voltage-controlled/digital controlled oscillator |
| CN112803900B (en) * | 2021-03-30 | 2021-07-16 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
| CN113922770B (en) * | 2021-12-14 | 2022-03-04 | 深圳市时代速信科技有限公司 | Bias control circuit and electronic equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330458A (en) * | 2000-06-23 | 2002-01-09 | 国际商业机器公司 | Active biased network circuir for radio frequency amplifier |
| CN1373626A (en) * | 2001-02-28 | 2002-10-09 | 株式会社移动通信东京 | Offset control circuit |
| CN101043202A (en) * | 2006-03-22 | 2007-09-26 | 松下电器产业株式会社 | High-frequency power amplifier |
| CN101478293A (en) * | 2008-12-02 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Temperature compensation power amplifier circuit |
| CN201409116Y (en) * | 2009-04-30 | 2010-02-17 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier biasing circuit |
-
2016
- 2016-06-27 CN CN201610482039.0A patent/CN106208980B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330458A (en) * | 2000-06-23 | 2002-01-09 | 国际商业机器公司 | Active biased network circuir for radio frequency amplifier |
| CN1373626A (en) * | 2001-02-28 | 2002-10-09 | 株式会社移动通信东京 | Offset control circuit |
| CN101043202A (en) * | 2006-03-22 | 2007-09-26 | 松下电器产业株式会社 | High-frequency power amplifier |
| CN101478293A (en) * | 2008-12-02 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Temperature compensation power amplifier circuit |
| CN201409116Y (en) * | 2009-04-30 | 2010-02-17 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier biasing circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106208980A (en) | 2016-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106208980B (en) | A kind of radio-frequency power amplifier biasing circuit and its implementation | |
| CN106230390B (en) | A kind of temperature-compensation circuit of power amplifier | |
| CN107332520B (en) | Bias circuit and power amplification circuit | |
| CN207869070U (en) | Active biased darlington structure amplifier | |
| CN103166581A (en) | Radio frequency low noise amplifier with high linearity | |
| JP3631060B2 (en) | Linear amplifier and radio communication apparatus using the same | |
| CN211791447U (en) | Bias circuit of radio frequency power amplifier and radio frequency power amplifier | |
| CN109560777A (en) | A kind of active biased Cascode radio frequency amplifier | |
| CN113054915B (en) | Temperature compensation bias circuit applied to radio frequency power amplifier | |
| CN110098806A (en) | A kind of adaptive linear radio-frequency bias circuit | |
| KR100300838B1 (en) | Active lowpass filter | |
| CN114679140B (en) | High linearity radio frequency power amplifier | |
| CN112653402A (en) | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process | |
| CN114024510A (en) | Power amplifier bias circuit based on GaAs HBT technology | |
| CN103178788A (en) | Wide power supply voltage working low noise amplifier bias circuit | |
| TW201824740A (en) | Amplifier circuit | |
| CN203166836U (en) | Amplifier with pass-through mode | |
| CN103326675A (en) | Linear radiofrequency power amplifier | |
| CN115395905A (en) | Power amplifier bias circuit, power amplification circuit and communication equipment | |
| CN103916089A (en) | Radio frequency amplifier and working method thereof | |
| CN110212867B (en) | Wide-voltage trans-impedance amplifier | |
| CN206099913U (en) | Solid -state power amplifier circuit of X wave band broadband fixed ampllitude | |
| CN113346848A (en) | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit | |
| CN207218642U (en) | A kind of low-loss adaptive bias circuit and wireless transmitting system | |
| KR100591062B1 (en) | Linear power amplifier for predistortion by using reverse diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |