CN110176923A - A kind of adaptive linear radio-frequency bias module and its use circuit - Google Patents
A kind of adaptive linear radio-frequency bias module and its use circuit Download PDFInfo
- Publication number
- CN110176923A CN110176923A CN201910403842.4A CN201910403842A CN110176923A CN 110176923 A CN110176923 A CN 110176923A CN 201910403842 A CN201910403842 A CN 201910403842A CN 110176923 A CN110176923 A CN 110176923A
- Authority
- CN
- China
- Prior art keywords
- base
- emitter
- emitter diode
- diode
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003044 adaptive effect Effects 0.000 title claims abstract description 24
- 239000003990 capacitor Substances 0.000 claims abstract description 35
- PHLXSNIEQIKENK-UHFFFAOYSA-N 2-[[2-[5-methyl-3-(trifluoromethyl)pyrazol-1-yl]acetyl]amino]-4,5,6,7-tetrahydro-1-benzothiophene-3-carboxamide Chemical compound CC1=CC(C(F)(F)F)=NN1CC(=O)NC1=C(C(N)=O)C(CCCC2)=C2S1 PHLXSNIEQIKENK-UHFFFAOYSA-N 0.000 claims abstract description 30
- 101100230601 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) HBT1 gene Proteins 0.000 claims abstract description 30
- 238000001514 detection method Methods 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000006239 protecting group Chemical group 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/12—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using diode rectifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Amplifiers (AREA)
Abstract
A kind of adaptive linear radio-frequency bias module, including temperature compensation module and linearisation biasing module；The temperature compensation module includes base-emitter diode HBT4, base-emitter diode HBT5, resistance R5 and resistance R6；One end of resistance R5 is connect with voltage source Vref, and the other end is connect with the collector of base-emitter diode HBT4, the emitter ground connection of base-emitter diode HBT4；The linearisation biasing module includes base-emitter diode HBT1 and capacitor C1；The collector of base-emitter diode HBT1 is connect with voltage source Vcc, and the base stage of base-emitter diode HBT1 is connect with one end of capacitor C1, the other end ground connection of capacitor C1；The base stage of base-emitter diode HBT1 is also attached between resistance R6 and the collector of base-emitter diode HBT5.The base of base-emitter diode HBT1-radio pressure drop also compensates for base-radio pressure of base-emitter diode HBT0, it is allowed to still be able to maintain enough biass when inputting big RFin signal to enhance the linearity, adaptive bias is realized by the feedback of base-emitter diode HBT4.
Description
Technical field
Circuit field more particularly to a kind of adaptive linear radio-frequency bias module are adjusted the present invention relates to radio frequency and its are made
Use circuit.
Background technique
The rapid development of wireless communication technique, the especially development of green wireless communication, refer to the performance of communication system
Mark proposes increasingly higher demands, and as an important component in communication system, the linearity of power amplifier exists
It is particularly important in system.Its size of the demand for development of radio-frequency power amplifier is smaller and smaller, continues to cause power density
Increase.As the GaAsHBT device that RF power amplification mainly uses, material conducts heat ability is poor, and (thermal conductivity is about the 1/ of Si material
3), cause the temperature of amplifier in real work significantly raised, power characteristic is limited by higher device temperature effect, so that real
Border power characteristic is well below the electric property under room temperature.Therefore, how the power amplifier linearity and high-temperature condition preferably to be improved
Normal work, be always the research hotspot in power amplifier field, one such method is exactly to improve radio-frequency bias technology.
Traditionally, the bias point of power amplifier and load line are designed according to 1dB compression point (P1dB) is optimal, and power amplifier exists
Output power peak aging rate highest.However since power amplifier often works in non-peak power output state, in order to improve power amplifier
Average efficiency, require power amplifier to have high efficiency in wider working range.For the monolithic integrated microwave circuit of HBT
(MMIC) for power amplifier, in order to obtain good compromise between efficiency and the linearity, an important method is exactly to allow HBT's is inclined
It sets and a little changes with input signal power, that is, work in dynamic A class state, and this biasing technique is referred to as adaptive linear
Biasing.Many documents all respectively study this biasing technique.
Bipolar junction transistor biasing circuit in the prior art is generally made of two resistance series connection partial pressures, such as Fig. 1 institute
Show.When the input power is increased, HBT0 (referring to band output-stage power pipe in described below with HBT0) base-is added to penetrate on junction diode
RF voltage and current signals so that big forward voltage and negative current is limited due to the clamping factor of diode.Through base-
Average DC current Irec after penetrating junction diode rectification will increase with input power and be increased, and base-penetrates knot both end voltage VBE
△ VBE is reduced, bias point is moved to L1 by S, as shown in Figure 2.This will lead to mutual conductance reduction, gain reduction and phase distortion.
In order to compensate for the gain compression and phase distortion under big signal conditioning, it is necessary to keep big signal mutual conductance consistent with small-signal transconductance,
Therefore, bias point should be moved to L2 by L1.A kind of method effectively moving bias point is exactly that biasing circuit can be mentioned
For compensating electric current Icom and offset voltage △ VBE.The method for realizing this compensation is exactly adaptive linear biasing technique.
Summary of the invention
Based on above-mentioned technical problem, it is an object of the invention to propose that a kind of temperature compensation module, adaptive linear are penetrated
Frequency biasing module and use circuit.
To achieve this purpose, the present invention adopts the following technical scheme:
A kind of adaptive linear radio-frequency bias module；Including temperature compensation module and linearisation biasing module；
The temperature compensation module includes base-emitter diode HBT4, base-emitter diode HBT5, resistance R5 and resistance
R6；
One end of resistance R5 is connect with voltage source Vref, and the other end is connect with the collector of base-emitter diode HBT4,
The emitter of base-emitter diode HBT4 is grounded；
One end of resistance R6 is connect with voltage source Vref, and the other end is connect with the collector of base-emitter diode HBT5,
The emitter of base-emitter diode HBT5 is grounded；
The base stage of base-emitter diode HBT5 is connected between resistance R5 and the collector of base-emitter diode HBT4；Base is penetrated
The base stage of junction diode HBT4 is connect with voltage source Vref；
The linearisation biasing module includes base-emitter diode HBT1 and capacitor C1；The collection of base-emitter diode HBT1
Electrode is connect with voltage source Vcc, and the base stage of base-emitter diode HBT1 is connect with one end of capacitor C1, another termination of capacitor C1
Ground；
The base stage of base-emitter diode HBT1 is also attached between resistance R6 and the collector of base-emitter diode HBT5；Base
The base stage for penetrating junction diode HBT4 is also connect with the emitter of base-emitter diode HBT1, and is also concatenated on the route of the two connection
There is resistance R3.
It further, further include power detection module, the power detection module is connected to base-emitter diode HBT4's
Between base stage and resistance R3 comprising base-emitter diode HBT2, base-emitter diode HBT3 and capacitor C2；
One end of the collector of base-emitter diode HBT2, the collector of base-emitter diode HBT3 and capacitor C2 respectively with
The base stage of base-emitter diode HBT4 connects；
The other end of the emitter of base-emitter diode HBT2, the emitter of base-emitter diode HBT3 and capacitor C2 is distinguished
Ground connection；
The base stage of base-emitter diode HBT2 and the base stage of base-emitter diode HBT3 are connect with resistance R3 respectively.
Further, with being serially connected with resistance R4 between the base stage and voltage source Vref of base-emitter diode HBT4.
Further, resistance R1 is serially connected between the collector and voltage source Vcc of base-emitter diode HBT1.
It is a kind of to use circuit, including base-emitter diode HBT0, capacitor Cin, capacitor Cout, inductance L, resistance R2, such as weigh
Benefit require 3 or 4 described in adaptive linear radio-frequency bias module；
The base stage of base-emitter diode HBT0 is connect with capacitor Cin, and inductance L and capacitor Cout are connected in parallel rear and base-emitter
The collector of diode HBT0 connects, the emitter ground connection of base-emitter diode HBT0；
The adaptive linear radio-frequency bias module is connected to the base stage and capacitor Cin of base-emitter diode HBT0
Between, after the emitter of base-emitter diode HBT1 is connect with resistance R3, pass through the base of resistance R2 and base-emitter diode HBT0
Pole connection.
When inputting RFin signal increase, due to the rectification characteristic of base-emitter diode HBT0, base potential Vbo can subtract
Small, the RFin signal for being leaked to adaptive linear radio-frequency bias module is shorted to ground by C1；Due to base-emitter diode
The rectification characteristic of HBT1, base potential Vbe1 can reduce, so that Vbo is compensated for, so that base-emitter diode HBT0 is able to
Under high power state, enough biass are still able to maintain, inhibit gain compression.
This patent emphasis is discussed with regard to the adaptive linearization technique of radio-frequency bias, the base-of base-emitter diode HBT1
Radio pressure drop also compensates for base-radio pressure of base-emitter diode HBT0, is allowed to still be able to maintain foot when inputting big RFin signal
Enough biass realize adaptive bias to enhance the linearity, by the feedback of base-emitter diode HBT4.
Detailed description of the invention
Fig. 1 is to use electrical block diagram with biasing circuit module in the prior art；
Fig. 2 is the Current Voltage variation diagram when prior art uses；
Fig. 3 is the electrical block diagram of one embodiment of the present of invention；
Fig. 4 is the current temperature variation diagram that the present invention emulates.
Specific embodiment
To further illustrate the technical scheme of the present invention below with reference to the accompanying drawings and specific embodiments.
As shown in figure 3, a kind of temperature compensation module, including base-emitter diode HBT4, base-emitter diode HBT5, electricity
Hinder R5 and resistance R6；
One end of resistance R5 is connect with voltage source Vref, and the other end is connect with the collector of base-emitter diode HBT4,
The emitter of base-emitter diode HBT4 is grounded；
One end of resistance R6 is connect with voltage source Vref, and the other end is connect with the collector of base-emitter diode HBT5,
The emitter of base-emitter diode HBT5 is grounded；
The base stage of base-emitter diode HBT5 is connected between resistance R5 and the collector of base-emitter diode HBT4；Base is penetrated
The base stage of junction diode HBT4 is connect with voltage source Vref.
Circuit structure involved in temperature compensation module of the present invention is used for mating radio-frequency bias circuit, to realize
Radio-frequency power amplifier is during continuous use in the raised situation of temperature, to the adjusting that power amplifier output power compensates,
To improve the average efficiency of power amplifier.
Further, between the base stage of base-emitter diode HBT4 and voltage source Vref, it is serially connected with resistance R4, protecting group is penetrated
The use of the base stage of junction diode HBT4 avoids current overload and burns out it.
As shown in figure 3, a kind of adaptive linear radio-frequency bias module, including linearisation biasing module and above-mentioned temperature are mended
Repay module；
The linearisation biasing module includes base-emitter diode HBT1 and capacitor C1；The collection of base-emitter diode HBT1
Electrode is connect with voltage source Vcc, and the base stage of base-emitter diode HBT1 is connect with one end of capacitor C1, another termination of capacitor C1
Ground；
The base stage of base-emitter diode HBT1 is also attached between resistance R6 and the collector of base-emitter diode HBT5；Base
The base stage for penetrating junction diode HBT4 is also connect with the emitter of base-emitter diode HBT1, and is also concatenated on the route of the two connection
There is resistance R3.
It further, further include power detection module, the power detection module is connected to base-emitter diode HBT4's
Between base stage and resistance R3 comprising base-emitter diode HBT2 and base-emitter diode HBT3；
One end of the collector of base-emitter diode HBT2, the collector of base-emitter diode HBT3 and capacitor C2 respectively with
The base stage of base-emitter diode HBT4 connects；
The other end of the emitter of base-emitter diode HBT2, the emitter of base-emitter diode HBT3 and capacitor C2 is distinguished
Ground connection；
The base stage of base-emitter diode HBT2 and the base stage of base-emitter diode HBT3 are connect with resistance R3 respectively.
Further, it is serially connected with resistance R1 between the collector and voltage source Vcc of base-emitter diode HBT1, is serially connected with electricity
R1 is hindered, protecting group penetrates the collector of junction diode HBT1, avoids current overload and burn out it.
As shown in figure 3, a kind of use circuit, including base-emitter diode HBT0, capacitor Cin, capacitor Cout, inductance L, electricity
Hinder R2, above-mentioned adaptive linear radio-frequency bias module；
The base stage of base-emitter diode HBT0 is connect with capacitor Cin, and inductance L and capacitor Cout are connected in parallel rear and base-emitter
The collector of diode HBT0 connects, the emitter ground connection of base-emitter diode HBT0；
The adaptive linear radio-frequency bias module is connected to the base stage and capacitor Cin of base-emitter diode HBT0
Between, after the emitter of base-emitter diode HBT1 is connect with resistance R3, pass through the base of resistance R2 and base-emitter diode HBT0
Pole connection.
When inputting RFin signal increase, due to the rectification characteristic of base-emitter diode HBT0, base potential Vbo can subtract
Small, the RFin signal for being leaked to adaptive linear radio-frequency bias module is shorted to ground by C1；Due to base-emitter diode
The rectification characteristic of HBT1, base potential Vbe1 can reduce, so that Vbo is compensated for, so that base-emitter diode HBT0 is able to
Under high power state, enough biass are still able to maintain, inhibit gain compression.
Base-emitter diode HBT4, base-emitter diode HBT5, resistance R5 and resistance R6 form temperature compensation module, and base is penetrated
Junction diode HBT2 and base-emitter diode HBT3 forms power detection module, base-emitter diode HBT2, base-emitter diode
The base voltage derivation of equation of HBT3, base-emitter diode HBT4 and base-emitter diode HBT5 are as follows:
VB4=Vref-(IC2+IC3+IB4)R4 (1)
VB5=Vref-(Ic4+IB5)R5 (2)
VB1=Vref-(IC5+IB1)R6 (3)
Wherein, VBn is the base voltage of HBTn；
ICn is the collector current of HBTn；
IBn is the base current of HBTn.
When the temperature increases, the collector current of transistor increases.I when the temperature increasesC2And IC3Increase, base-emitter two
Pole pipe HBT2 and base-emitter diode HBT3 work in linear zone, derive V by formula (1)B4Reduce, then IC4Reduce；By formula
(2) V is derivedB5Increase, then IC5Increase；V is derived by formula (3)B1Reduce, to inhibit the collection of base-emitter diode HBT1
The increase of electrode current.
Radiofrequency signal is understood some and is revealed by base-emitter diode HBT2, this part signal can be shorted to ground from C2.
Emphasis, the present invention is to realize effect temperature compensation by forming feedback control loop, by emulating circuit of the present invention
The current temperature variation diagram such as Fig. 4 is obtained, power stage collector current variable quantity is 12mA.
The technical principle of the invention is described above in combination with a specific embodiment.These descriptions are intended merely to explain of the invention
Principle, and shall not be construed in any way as a limitation of the scope of protection of the invention.Based on the explanation herein, the technology of this field
Personnel can associate with other specific embodiments of the invention without creative labor, these modes are fallen within
Within protection scope of the present invention.
Claims (5)
1. a kind of adaptive linear radio-frequency bias module, it is characterised in that: including temperature compensation module and linearisation biasing mould
Block；
The temperature compensation module includes base-emitter diode HBT4, base-emitter diode HBT5, resistance R5 and resistance R6；
One end of resistance R5 is connect with voltage source Vref, and the other end is connect with the collector of base-emitter diode HBT4, and base is penetrated
The emitter of junction diode HBT4 is grounded；
One end of resistance R6 is connect with voltage source Vref, and the other end is connect with the collector of base-emitter diode HBT5, and base is penetrated
The emitter of junction diode HBT5 is grounded；
The base stage of base-emitter diode HBT5 is connected between resistance R5 and the collector of base-emitter diode HBT4；Base-emitter two
The base stage of pole pipe HBT4 is connect with voltage source Vref；
The linearisation biasing module includes base-emitter diode HBT1 and capacitor C1；The collector of base-emitter diode HBT1 with
Voltage source Vcc connection, the base stage of base-emitter diode HBT1 are connect with one end of capacitor C1, the other end ground connection of capacitor C1；
The base stage of base-emitter diode HBT1 is also attached between resistance R6 and the collector of base-emitter diode HBT5；Base-emitter
The base stage of diode HBT4 is also connect with the emitter of base-emitter diode HBT1, and is also serially connected with electricity on the route of the two connection
Hinder R3.
2. adaptive linear radio-frequency bias module according to claim 1, it is characterised in that: further include power detection mould
Block, the power detection module are connected between the base stage and resistance R3 of base-emitter diode HBT4 comprising two pole of base-emitter
Pipe HBT2, base-emitter diode HBT3 and capacitor C2；
Collector, the collector of base-emitter diode HBT3 and one end of capacitor C2 of base-emitter diode HBT2 is penetrated with base respectively
The base stage of junction diode HBT4 connects；
Emitter, the emitter of base-emitter diode HBT3 and the other end of capacitor C2 of base-emitter diode HBT2 connects respectively
Ground；
The base stage of base-emitter diode HBT2 and the base stage of base-emitter diode HBT3 are connect with resistance R3 respectively.
3. adaptive linear radio-frequency bias module according to claim 1, it is characterised in that: with base-emitter diode
Between the base stage and voltage source Vref of HBT4, it is serially connected with resistance R4.
4. adaptive linear radio-frequency bias module according to claim 1, it is characterised in that: base-emitter diode HBT1
Collector and voltage source Vcc between be serially connected with resistance R1.
5. a kind of use circuit, it is characterised in that: including base-emitter diode HBT0, capacitor Cin, capacitor Cout, inductance L, electricity
Hinder R2, adaptive linear radio-frequency bias module as described in claim 3 or 4；
The base stage of base-emitter diode HBT0 is connect with capacitor Cin, and inductance L and capacitor Cout are connected in parallel rear and two pole of base-emitter
The collector of pipe HBT0 connects, the emitter ground connection of base-emitter diode HBT0；
The adaptive linear radio-frequency bias module is connected between the base stage and capacitor Cin of base-emitter diode HBT0,
After the emitter of base-emitter diode HBT1 is connect with resistance R3, connected by the base stage of resistance R2 and base-emitter diode HBT0
It connects.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910403842.4A CN110176923B (en) | 2019-05-15 | 2019-05-15 | Self-adaptive linear radio frequency bias module and using circuit thereof |
| PCT/CN2019/097305 WO2020228133A1 (en) | 2019-05-15 | 2019-07-23 | Self-adaptive linearized radio frequency offset module and circuit used by same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910403842.4A CN110176923B (en) | 2019-05-15 | 2019-05-15 | Self-adaptive linear radio frequency bias module and using circuit thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110176923A true CN110176923A (en) | 2019-08-27 |
| CN110176923B CN110176923B (en) | 2020-02-14 |
Family
ID=67691206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910403842.4A Active CN110176923B (en) | 2019-05-15 | 2019-05-15 | Self-adaptive linear radio frequency bias module and using circuit thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110176923B (en) |
| WO (1) | WO2020228133A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190824A (en) * | 2019-05-30 | 2019-08-30 | 广东工业大学 | A kind of active biased network and a kind of radio-frequency power amplifier |
| CN112532191A (en) * | 2021-02-10 | 2021-03-19 | 广州慧智微电子有限公司 | Power detection circuit and method of power amplifier |
| CN112564643A (en) * | 2020-12-08 | 2021-03-26 | 广东工业大学 | Self-adaptive radio frequency bias circuit |
| CN113824415A (en) * | 2021-11-25 | 2021-12-21 | 山东汉芯科技有限公司 | Intelligent program-controlled high-gain amplifier with temperature compensation |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6922107B1 (en) * | 2002-12-23 | 2005-07-26 | Dynalinear Technologies, Inc. | Dual (constant voltage/constant current) bias supply for linear power amplifiers |
| US7372317B1 (en) * | 2005-11-21 | 2008-05-13 | Analog Devices, Inc. | PTATn bias cell for improved temperature performance |
| US20080143445A1 (en) * | 2006-12-18 | 2008-06-19 | Matsushita Electric Industrial Co., Ltd. | Power amplifier |
| CN101478293A (en) * | 2008-12-02 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Temperature compensation power amplifier circuit |
| CN201409116Y (en) * | 2009-04-30 | 2010-02-17 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier biasing circuit |
| CN201571021U (en) * | 2010-01-18 | 2010-09-01 | 惠州市正源微电子有限公司 | Power amplifier biasing circuit with temperature compensation function |
| CN104361874A (en) * | 2014-11-20 | 2015-02-18 | 京东方科技集团股份有限公司 | Temperature compensating circuit and method and liquid crystal display |
| CN106230390A (en) * | 2016-07-13 | 2016-12-14 | 锐迪科微电子（上海）有限公司 | A kind of temperature-compensation circuit of power amplifier |
| CN106788282A (en) * | 2016-12-16 | 2017-05-31 | 锐迪科微电子（上海）有限公司 | A kind of device and method for improving dynamic error amplitude of the vector |
| CN107863939A (en) * | 2017-11-09 | 2018-03-30 | 西安电子科技大学 | Low-power consumption feedback-type power amplification circuit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255605A (en) * | 2011-01-14 | 2011-11-23 | 苏州英诺迅科技有限公司 | Adjustable active biasing circuit for radiofrequency power amplifier |
| CN104639051A (en) * | 2013-11-13 | 2015-05-20 | 沈阳中科微电子有限公司 | Power amplifier bias circuit for restraining temperature drift |
| US9632522B2 (en) * | 2015-04-15 | 2017-04-25 | Skyworks Solutions, Inc. | Current mirror bias circuit with voltage adjustment |
| CN107171647B (en) * | 2017-06-23 | 2023-05-05 | 广东工业大学 | Adaptive bias circuit with low loss and temperature compensation and wireless transmission system |
| CN110190824B (en) * | 2019-05-30 | 2023-02-07 | 广东工业大学 | Active bias network and radio frequency power amplifier |
-
2019
- 2019-05-15 CN CN201910403842.4A patent/CN110176923B/en active Active
- 2019-07-23 WO PCT/CN2019/097305 patent/WO2020228133A1/en active Application Filing
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6922107B1 (en) * | 2002-12-23 | 2005-07-26 | Dynalinear Technologies, Inc. | Dual (constant voltage/constant current) bias supply for linear power amplifiers |
| US7372317B1 (en) * | 2005-11-21 | 2008-05-13 | Analog Devices, Inc. | PTATn bias cell for improved temperature performance |
| US20080143445A1 (en) * | 2006-12-18 | 2008-06-19 | Matsushita Electric Industrial Co., Ltd. | Power amplifier |
| CN101478293A (en) * | 2008-12-02 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Temperature compensation power amplifier circuit |
| CN201409116Y (en) * | 2009-04-30 | 2010-02-17 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier biasing circuit |
| CN201571021U (en) * | 2010-01-18 | 2010-09-01 | 惠州市正源微电子有限公司 | Power amplifier biasing circuit with temperature compensation function |
| CN104361874A (en) * | 2014-11-20 | 2015-02-18 | 京东方科技集团股份有限公司 | Temperature compensating circuit and method and liquid crystal display |
| CN106230390A (en) * | 2016-07-13 | 2016-12-14 | 锐迪科微电子（上海）有限公司 | A kind of temperature-compensation circuit of power amplifier |
| CN106788282A (en) * | 2016-12-16 | 2017-05-31 | 锐迪科微电子（上海）有限公司 | A kind of device and method for improving dynamic error amplitude of the vector |
| CN107863939A (en) * | 2017-11-09 | 2018-03-30 | 西安电子科技大学 | Low-power consumption feedback-type power amplification circuit |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190824A (en) * | 2019-05-30 | 2019-08-30 | 广东工业大学 | A kind of active biased network and a kind of radio-frequency power amplifier |
| CN110190824B (en) * | 2019-05-30 | 2023-02-07 | 广东工业大学 | Active bias network and radio frequency power amplifier |
| CN112564643A (en) * | 2020-12-08 | 2021-03-26 | 广东工业大学 | Self-adaptive radio frequency bias circuit |
| CN112532191A (en) * | 2021-02-10 | 2021-03-19 | 广州慧智微电子有限公司 | Power detection circuit and method of power amplifier |
| CN112532191B (en) * | 2021-02-10 | 2021-05-14 | 广州慧智微电子有限公司 | Power detection circuit and method of power amplifier |
| CN113824415A (en) * | 2021-11-25 | 2021-12-21 | 山东汉芯科技有限公司 | Intelligent program-controlled high-gain amplifier with temperature compensation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110176923B (en) | 2020-02-14 |
| WO2020228133A1 (en) | 2020-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110176923A (en) | A kind of adaptive linear radio-frequency bias module and its use circuit | |
| CN106452377B (en) | A kind of radio-frequency power amplifier of adaptive equalization | |
| US7834700B2 (en) | Radio frequency power amplifier | |
| CN110098806A (en) | A kind of adaptive linear radio-frequency bias circuit | |
| CN115567012B (en) | Self-adaptive broadband Doherty power amplifier | |
| CN107863939B (en) | Low-power consumption feedback type power amplifying circuit | |
| JP2004537212A (en) | Improved linear power amplifier | |
| CN105515539B (en) | Improve method, compensation circuit and the communication terminal of linearity of radio-frequency power amplifier | |
| CN103166581A (en) | Radio frequency low noise amplifier with high linearity | |
| CN113114121B (en) | Bias circuit for radio frequency power amplifier | |
| CN211791447U (en) | Bias circuit of radio frequency power amplifier and radio frequency power amplifier | |
| CN217428086U (en) | Temperature compensation bias circuit and power amplifier | |
| Lee et al. | A high power asymmetric Doherty amplifier with improved linear dynamic range | |
| Aref et al. | 2.6 Class-0: A highly linear class of power amplifiers in 0.13 μm CMOS for WCDMA/LTE applications | |
| CN112543004A (en) | Linear bias circuit and radio frequency power amplifier | |
| Wan et al. | A high-efficiency two-stage GaAs HBT Doherty power amplifier with thermal compensation for WLAN application | |
| CN111262534A (en) | Self-adaptive bias circuit for power amplifier chip | |
| Wang et al. | A Ka-band highly linear power amplifier with a linearization bias circuit | |
| CN216904823U (en) | Radio frequency power amplifier and linearization bias circuit of GaAs-based HBT (heterojunction Bipolar transistor) process MMIC (monolithic microwave Integrated Circuit) mobile phone | |
| CN214507011U (en) | Linear bias circuit and radio frequency power amplifier | |
| Li et al. | 5W high-power high-linearity L-band InGaP/GaAs HBT PA MMIC for RDSS applications | |
| LU501118B1 (en) | Adaptive linearizing radio frequency bias module and using method thereof | |
| CN211791445U (en) | Self-adaptive bias circuit for power amplifier chip | |
| Sun et al. | Peripheral adaption power cell network for high efficiency and high linearity power amplifier | |
| CN107222174A (en) | A kind of low-loss adaptive bias circuit and wireless transmitting system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |