CN110098806A - A kind of adaptive linear radio-frequency bias circuit - Google Patents
A kind of adaptive linear radio-frequency bias circuit Download PDFInfo
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- CN110098806A CN110098806A CN201910340074.2A CN201910340074A CN110098806A CN 110098806 A CN110098806 A CN 110098806A CN 201910340074 A CN201910340074 A CN 201910340074A CN 110098806 A CN110098806 A CN 110098806A
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- bipolar transistors
- heterojunction bipolar
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G2201/00—Indexing scheme relating to subclass H03G
- H03G2201/40—Combined gain and bias control
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0425—Circuits with power amplifiers with linearisation using predistortion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a kind of adaptive linear radio-frequency bias circuits, including linear biasing circuit and radio frequency amplifier unit circuit；The linear biasing circuit passes through adaptive line compensation circuit and the radio frequency amplifier unit circuit connection；The linear biasing circuit includes Heterojunction Bipolar Transistors HBT2, Heterojunction Bipolar Transistors HBT3, Heterojunction Bipolar Transistors HBT4, resistance R3, resistance R4, resistance R5 and capacitor C2；The collector of the Heterojunction Bipolar Transistors HBT4 is connect with the linear biasing circuit port；The present invention realizes adaptive line compensation by the feedback of the Heterojunction Bipolar Transistors HBT4 of adaptive line compensation circuit, Heterojunction Bipolar Transistors HBT0 can select bias state according to the size of output power, and power amplifier improves the linearity while taking into account efficiency；The gain compression and phase distortion characteristic of HBT can be effectively improved；Structure is simple, and size is small, at low cost, is suitable for the design of MMIC power amplifier.
Description
Technical field
The present invention relates to field of communication technology, a kind of adaptive linear radio-frequency bias circuit in particular.
Background technique
The rapid development of wireless communication technique, the especially development of green wireless communication, refer to the performance of communication system
Mark proposes increasingly higher demands.As an important component in communication system, the linearity of power amplifier exists
It is particularly important in system.Therefore, how the power amplifier linearity is preferably improved, is always the research hotspot in power amplifier field.Wherein mention
A kind of method of high linearity is exactly to improve radio-frequency bias technology.
Traditionally, the bias point of power amplifier and load line are designed according to 1dB compression point (P1dB) is optimal, and power amplifier is defeated
Power peak aging rate highest out.However since power amplifier often works in non-peak power output state, in order to improve power amplifier
Average efficiency requires power amplifier to have high efficiency in wider working range.For the monolithic integrated microwave circuit of HBT
(MMIC) for power amplifier, in order to obtain good compromise between efficiency and the linearity, an important method is exactly to allow HBT's is inclined
It sets and a little changes with input signal power, that is, work in dynamic A class state, and this biasing technique is referred to as adaptive linear
Biasing.Many documents all respectively study this biasing technique.
Traditional bipolar junction transistor biasing circuit is generally made of two resistance series connection partial pressures, as shown in Figure 2.Work as input
When power increases, it is added to HBT0 and (refers to output-stage power pipe) that base-penetrates the RF voltage on junction diode in described below with HBT0
And current signal makes big forward voltage and negative current be limited due to the clamping factor of diode.Two pole of knot is penetrated through base-
Pipe rectification after average DC current Irec will increase with input power and increase, and base-penetrate tie both end voltage VBE reduce △
VBE, bias point are moved to L1 by S, as shown in Figure 3.This will lead to mutual conductance reduction, gain reduction and phase distortion.In order to compensate for
Gain compression and phase distortion under big signal conditioning, it is necessary to keep big signal mutual conductance consistent with small-signal transconductance, therefore, Ying Jiang
Bias point is moved to L2 by L1.A kind of method effectively moving bias point is exactly that biasing circuit is allowed to be capable of providing compensation electric current
Icom and offset voltage △ VBE.The method for realizing this compensation is exactly adaptive linear biasing technique.The present invention proposes one kind
Suitable for HBT MMIC technique, the adaptive linear biasing circuit that size is small, at low cost,
Summary of the invention
The purpose of the present invention is to provide a kind of structure is simple, size is small, at low cost, be suitable for MMIC power amplifier design from
Adapt to linearisation radio-frequency bias circuit.
What the invention is realized by the following technical scheme:
A kind of adaptive linear radio-frequency bias circuit, including linear biasing circuit and radio frequency amplifier unit circuit；
Wherein: the linear biasing circuit passes through adaptive line compensation circuit and the radio frequency amplifier unit circuit connection；Institute
Adaptive line compensation circuit is stated according to the bias voltage of the variation adjustment Power Amplifier Unit of input signal power；The line
Property biasing circuit include that Heterojunction Bipolar Transistors HBT2, Heterojunction Bipolar Transistors HBT3, heterojunction bipolar are brilliant
Body pipe HBT4, resistance R3, resistance R4, resistance R5 and capacitor C2；The collector of the Heterojunction Bipolar Transistors HBT4 and institute
State the connection of linear biasing circuit port；The base stage of the Heterojunction Bipolar Transistors HBT2 and the heterojunction bipolar are brilliant
It is connect after the base stage of body pipe HBT3 is in parallel and by resistance R3 with the linear biasing circuit port.
Further, one end of the capacitor C2 respectively with the resistance R5 and the Heterojunction Bipolar Transistors HBT1
Base stage connection, the other end ground connection.
Further, the Heterojunction Bipolar Transistors HBT2, Heterojunction Bipolar Transistors HBT3 and hetero-junctions are double
The emitter of bipolar transistor HBT4 is grounded respectively.
Further, after the resistance R4 is in parallel with the resistance R5 respectively with the Heterojunction Bipolar Transistors HBT3
It is connected with the collector of Heterojunction Bipolar Transistors HBT4.
Further, the linear biasing circuit include resistance R2, Heterojunction Bipolar Transistors HBT1 base-penetrate knot
Diode and capacitor C1；One end of the capacitor C1 is connect with the base stage of the Heterojunction Bipolar Transistors HBT1, the other end
Ground connection；The emitter of the Heterojunction Bipolar Transistors HBT1 is connect with one end of the resistance R2, and the resistance R2's is another
One end is connect with the radio frequency amplifier unit circuit port.
Further, the collector of the Heterojunction Bipolar Transistors HBT1 is connect by resistance R1 with power cathode.
Further, the radio frequency amplifier unit circuit includes Heterojunction Bipolar Transistors HBT0；The hetero-junctions
The base stage of bipolar junction transistor HBT0 is connect by capacitor with RF signal input end mouth；The Heterojunction Bipolar Transistors
The collector of HBT0 is separately connected RF signal output mouth and inductance.
Beneficial effects of the present invention:
The present invention is realized adaptive by the feedback of the Heterojunction Bipolar Transistors HBT4 of adaptive line compensation circuit
Linear compensation, Heterojunction Bipolar Transistors HBT0 can select bias state according to the size of output power, make circuit can
Enough meet linear requirements, and the efficiency in low output power can be improved, power amplifier improves while taking into account efficiency
The linearity；The gain compression and phase distortion characteristic of HBT can be effectively improved；Linear biasing circuit automatically tracks input work
Rate variation, while improving the efficiency in low output power and the linearity in high-output power.This adaptive line
Property bias circuit construction is simple, and size is small, at low cost, is suitable for the design of MMIC power amplifier.
Detailed description of the invention
Fig. 1 is adaptive linear of embodiment of the present invention radio-frequency bias electrical block diagram；
Fig. 2 is traditional electric resistance partial pressure bias circuit construction schematic diagram；
Fig. 3 is the mobile schematic diagram of bias point；
Wherein: 100- linear biasing circuit, 200- radio frequency amplifier unit circuit, 300- adaptive line compensation electricity
Road.
Specific embodiment
Below in conjunction with attached drawing and specific embodiment, the present invention will be described in detail, below will herein with signal of the invention
In conjunction with attached drawing and specific embodiment, the present invention will be described in detail, is used to solve with illustrative examples and explanation of the invention herein
The present invention is released, but not as a limitation of the invention.
As shown in figure 3, a kind of adaptive linear radio-frequency bias circuit, including linear biasing circuit 100 and radio frequency are put
Big device element circuit 200；Wherein: the linear biasing circuit 100 passes through adaptive line compensation circuit 300 and the radio frequency
Amplifier unit circuit 200 connects；The adaptive line compensation circuit 300 adjusts power according to the variation of input signal power
The bias voltage of amplifier unit；The linear biasing circuit 100 includes Heterojunction Bipolar Transistors HBT2, hetero-junctions pair
Bipolar transistor HBT3, Heterojunction Bipolar Transistors HBT4, resistance R3, resistance R4, resistance R5 and capacitor C2；The hetero-junctions
The collector of bipolar junction transistor HBT4 is connect with 100 port of linear biasing circuit；The heterojunction bipolar crystal
After the base stage of pipe HBT2 is in parallel with the base stage of the Heterojunction Bipolar Transistors HBT3 and pass through resistance R3 and the linearisation
The connection of 100 port of biasing circuit.
Specifically, one end of the capacitor C2 is double with the resistance R5 and the hetero-junctions respectively in this embodiment scheme
The base stage of bipolar transistor HBT1 connects, other end ground connection.
Specifically, in this embodiment scheme, the Heterojunction Bipolar Transistors HBT2, Heterojunction Bipolar Transistors
The emitter of HBT3 and Heterojunction Bipolar Transistors HBT4 are grounded respectively.
Specifically, in this embodiment scheme, it is double with the hetero-junctions respectively after the resistance R4 is in parallel with the resistance R5
Bipolar transistor HBT3 is connected with the collector of Heterojunction Bipolar Transistors HBT4.
Specifically, the linear biasing circuit 100 includes resistance R2, heterojunction bipolar crystalline substance in this embodiment scheme
The base-of body pipe HBT1 penetrates junction diode and capacitor C1；One end of the capacitor C1 and the Heterojunction Bipolar Transistors HBT1
Base stage connection, the other end ground connection；One end of the emitter of the Heterojunction Bipolar Transistors HBT1 and the resistance R2 connect
It connects, the other end of the resistance R2 is connect with 200 port of radio frequency amplifier unit circuit.
Specifically, in this embodiment scheme, the collector of the Heterojunction Bipolar Transistors HBT1 by resistance R1 with
Power cathode connection.
Specifically, the radio frequency amplifier unit circuit 200 includes Heterojunction Bipolar Transistors in this embodiment scheme
HBT0；The base stage of the Heterojunction Bipolar Transistors HBT0 is connect by capacitor with RF signal input end mouth；It is described heterogeneous
The collector of knot bipolar junction transistor HBT0 is separately connected RF signal output mouth and inductance.
The present embodiment is further described through,
Working principle:
The linear biasing circuit 100 mainly penetrates two pole of knot by the base-of resistance R2, Heterojunction Bipolar Transistors HBT1
Pipe and capacitor C1 composition, when input rf signal increases, since Heterojunction Bipolar Transistors HBT0 base-penetrates junction diode rectification
Characteristic, Vb0 reduce；The RF signal for being leaked to linear biasing circuit 100 is shorted to ground by capacitor C1, due to heterogenous dual-pole
Transistor npn npn HBT1 base-penetrates the rectification characteristic of junction diode, and base-emitter junction voltage Vbe1 reduces, so that it is double to compensate for hetero-junctions
Bipolar transistor HBT0 base-emitter junction voltage Vb0, so that Heterojunction Bipolar Transistors HBT0 is able under high power state, according to
Enough biass are so able to maintain, gain compression is inhibited.
From radio frequency amplifier unit circuit 200 be leaked to linear biasing circuit 100 signal some shunt respectively
To Heterojunction Bipolar Transistors HBT2 and Heterojunction Bipolar Transistors HBT3,
Therefore, Im=Ic2+Ic3+Ib4=β Ib2+βIb3+Ib4So that Ib2 and Ib3 increases, so that Im increases, due to Vb4
=Vref-ImR4So Vb4 reduces, Vb1 is caused to increase, realizes adaptive line compensation.
Radiofrequency signal understands some leakage, this part signal can be shorted to ground from capacitor C2.Linear biasing circuit is certainly
The variation of motion tracking input power, while improving the efficiency in low output power and the linearity in high-output power.This
The adaptive linear biasing circuit structure of kind is simple, and size is small, at low cost, is suitable for the design of MMIC power amplifier.
It is provided for the embodiments of the invention technical solution above to be described in detail, specific case used herein
The principle and embodiment of the embodiment of the present invention are expounded, the explanation of above embodiments is only applicable to help to understand this
The principle of inventive embodiments；At the same time, for those skilled in the art, according to an embodiment of the present invention, in specific embodiment party
There will be changes in formula and application range, in conclusion the contents of this specification are not to be construed as limiting the invention.
Claims (7)
1. a kind of adaptive linear radio-frequency bias circuit, including linear biasing circuit and radio frequency amplifier unit circuit；Its
Be characterized in that: the linear biasing circuit is connected by adaptive line compensation circuit and the radio frequency amplifier unit circuit
It connects；The adaptive line compensation circuit adjusts the bias voltage of Power Amplifier Unit according to the variation of input signal power；
The linear biasing circuit includes Heterojunction Bipolar Transistors HBT2, Heterojunction Bipolar Transistors HBT3, hetero-junctions pair
Bipolar transistor HBT4, resistance R3, resistance R4, resistance R5 and capacitor C2；The current collection of the Heterojunction Bipolar Transistors HBT4
Pole is connect with the linear biasing circuit port；The base stage of the Heterojunction Bipolar Transistors HBT2 and the hetero-junctions are double
It is connect after the base stage of bipolar transistor HBT3 is in parallel and by resistance R3 with the linear biasing circuit port.
2. a kind of adaptive linear radio-frequency bias circuit according to claim 1, it is characterised in that: the capacitor C2's
One end is connect with the base stage of the resistance R5 and the Heterojunction Bipolar Transistors HBT1 respectively, other end ground connection.
3. a kind of adaptive linear radio-frequency bias circuit according to claim 2, it is characterised in that: the hetero-junctions is double
The emitter of bipolar transistor HBT2, Heterojunction Bipolar Transistors HBT3 and Heterojunction Bipolar Transistors HBT4 connect respectively
Ground.
4. a kind of adaptive linear radio-frequency bias circuit according to claim 3, it is characterised in that: the resistance R4 with
Collection with the Heterojunction Bipolar Transistors HBT3 and Heterojunction Bipolar Transistors HBT4 respectively after the resistance R5 is in parallel
Electrode connection.
5. a kind of adaptive linear radio-frequency bias circuit according to claim 4, it is characterised in that: the linearisation is inclined
Circuits include resistance R2, Heterojunction Bipolar Transistors HBT1 base-penetrate junction diode and capacitor C1；The one of the capacitor C1
End is connect with the base stage of the Heterojunction Bipolar Transistors HBT1, other end ground connection；The Heterojunction Bipolar Transistors
The emitter of HBT1 is connect with one end of the resistance R2, the other end of the resistance R2 and the radio frequency amplifier unit circuit
Port connection.
6. a kind of adaptive linear radio-frequency bias circuit according to claim 5, it is characterised in that: the hetero-junctions is double
The collector of bipolar transistor HBT1 is connect by resistance R1 with power cathode.
7. a kind of adaptive linear radio-frequency bias circuit according to claim 1, it is characterised in that: the radio frequency amplification
Device element circuit includes Heterojunction Bipolar Transistors HBT0；The base stage of the Heterojunction Bipolar Transistors HBT0 passes through capacitor
It is connect with RF signal input end mouth；The collector of the Heterojunction Bipolar Transistors HBT0 is separately connected radiofrequency signal output
Port and inductance.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910340074.2A CN110098806B (en) | 2019-04-25 | 2019-04-25 | Self-adaptive linear radio frequency bias circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910340074.2A CN110098806B (en) | 2019-04-25 | 2019-04-25 | Self-adaptive linear radio frequency bias circuit |
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| CN110098806B CN110098806B (en) | 2023-03-10 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111147033A (en) * | 2020-01-02 | 2020-05-12 | 尚睿微电子（上海）有限公司 | Power amplifier and electronic equipment based on HBT circuit structure |
| CN112398448A (en) * | 2020-10-30 | 2021-02-23 | 锐石创芯（深圳）科技有限公司 | Radio frequency differential amplification circuit and radio frequency module |
| CN112564643A (en) * | 2020-12-08 | 2021-03-26 | 广东工业大学 | Self-adaptive radio frequency bias circuit |
| CN113489461A (en) * | 2021-07-28 | 2021-10-08 | 电子科技大学 | Radio frequency predistortion linearizer and radio frequency power amplifier |
| CN114944819A (en) * | 2022-05-16 | 2022-08-26 | 广东工业大学 | Bias circuit for radio frequency power amplifier |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046642A (en) * | 1998-09-08 | 2000-04-04 | Motorola, Inc. | Amplifier with active bias compensation and method for adjusting quiescent current |
| US6313705B1 (en) * | 1999-12-20 | 2001-11-06 | Rf Micro Devices, Inc. | Bias network for high efficiency RF linear power amplifier |
| US20040113699A1 (en) * | 2002-12-12 | 2004-06-17 | Renesas Technology Corp. | Radio frequency power amplifier and communication system |
| US20080164949A1 (en) * | 2007-01-05 | 2008-07-10 | City University Of Hong Kong | Wideband linearization and adaptive power management for microwave power amplifiers |
| US20080297260A1 (en) * | 2007-05-28 | 2008-12-04 | Hirokazu Makihara | Radio-frequency power amplifier |
| CN102111112A (en) * | 2009-12-28 | 2011-06-29 | 中国科学院微电子研究所 | Radio-frequency power amplifier and a front-end transmitter |
| CN105763164A (en) * | 2014-12-16 | 2016-07-13 | 沈阳中科微电子有限公司 | Radio frequency power amplifier circuit |
| CN105808851A (en) * | 2016-03-09 | 2016-07-27 | 西安电子科技大学 | InP heterojunction bipolar transistor circuit based on backward bias compensation |
| WO2017107949A1 (en) * | 2015-12-22 | 2017-06-29 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensation circuit and communication terminal |
| US10141892B1 (en) * | 2017-07-31 | 2018-11-27 | Rafael Microelectronics, Inc. | Bias circuit for supplying a bias current to a RF power amplifier |
-
2019
- 2019-04-25 CN CN201910340074.2A patent/CN110098806B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046642A (en) * | 1998-09-08 | 2000-04-04 | Motorola, Inc. | Amplifier with active bias compensation and method for adjusting quiescent current |
| US6313705B1 (en) * | 1999-12-20 | 2001-11-06 | Rf Micro Devices, Inc. | Bias network for high efficiency RF linear power amplifier |
| US20040113699A1 (en) * | 2002-12-12 | 2004-06-17 | Renesas Technology Corp. | Radio frequency power amplifier and communication system |
| US20080164949A1 (en) * | 2007-01-05 | 2008-07-10 | City University Of Hong Kong | Wideband linearization and adaptive power management for microwave power amplifiers |
| US20080297260A1 (en) * | 2007-05-28 | 2008-12-04 | Hirokazu Makihara | Radio-frequency power amplifier |
| CN102111112A (en) * | 2009-12-28 | 2011-06-29 | 中国科学院微电子研究所 | Radio-frequency power amplifier and a front-end transmitter |
| CN105763164A (en) * | 2014-12-16 | 2016-07-13 | 沈阳中科微电子有限公司 | Radio frequency power amplifier circuit |
| WO2017107949A1 (en) * | 2015-12-22 | 2017-06-29 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensation circuit and communication terminal |
| CN105808851A (en) * | 2016-03-09 | 2016-07-27 | 西安电子科技大学 | InP heterojunction bipolar transistor circuit based on backward bias compensation |
| US10141892B1 (en) * | 2017-07-31 | 2018-11-27 | Rafael Microelectronics, Inc. | Bias circuit for supplying a bias current to a RF power amplifier |
Non-Patent Citations (4)
| Title |
|---|
| HUI DONG LEE等: ""A linear InGaP/GaAs HBT power amplifier for LTE B7 applications"", 《2017 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC)》 * |
| 彭艳军等: ""HBT MMIC功率放大器的自适应线性化偏置技术"", 《中国集成电路》 * |
| 林俊明等: ""CMOS射频功率放大器高效率和高线性度研究进展"", 《电子技术应用》 * |
| 黄亮等: ""一种带有温度补偿电路的射频功率放大器"", 《电子科技大学学报》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111147033A (en) * | 2020-01-02 | 2020-05-12 | 尚睿微电子（上海）有限公司 | Power amplifier and electronic equipment based on HBT circuit structure |
| CN112398448A (en) * | 2020-10-30 | 2021-02-23 | 锐石创芯（深圳）科技有限公司 | Radio frequency differential amplification circuit and radio frequency module |
| CN112398448B (en) * | 2020-10-30 | 2021-08-17 | 锐石创芯（深圳）科技有限公司 | Radio frequency differential amplification circuit and radio frequency module |
| CN112564643A (en) * | 2020-12-08 | 2021-03-26 | 广东工业大学 | Self-adaptive radio frequency bias circuit |
| CN113489461A (en) * | 2021-07-28 | 2021-10-08 | 电子科技大学 | Radio frequency predistortion linearizer and radio frequency power amplifier |
| CN114944819A (en) * | 2022-05-16 | 2022-08-26 | 广东工业大学 | Bias circuit for radio frequency power amplifier |
| CN114944819B (en) * | 2022-05-16 | 2023-02-10 | 广东工业大学 | Bias circuit for radio frequency power amplifier |
| US11777454B1 (en) | 2022-05-16 | 2023-10-03 | Guangdong University Of Technology | Bias circuit for radio frequency power amplifier |
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| Publication number | Publication date |
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| CN110098806B (en) | 2023-03-10 |
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