CN114553151A - Doherty power amplifier based on self-adaptive bias - Google Patents
Doherty power amplifier based on self-adaptive bias Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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Abstract
The invention discloses a Doherty power amplifier based on self-adaptive bias, which comprises a power divider, a main power amplifier and an auxiliary power amplifier, wherein the main power amplifier and the auxiliary power amplifier are connected in parallel and are connected with the output end of the power divider; the adaptive bias circuit includes a first transistor and a peripheral circuit. The Doherty power amplifier adopts the self-adaptive biasing circuit as the auxiliary power amplifier biasing circuit, and solves the problems of low gain, poor linearity and the like caused by the fact that the auxiliary power amplifier of the traditional Doherty power amplifier is biased in a C-type state.
Description
Technical Field
The invention relates to the technical field of microwave power amplifiers and integrated circuits, in particular to a Doherty power amplifier based on self-adaptive bias.
Background
The rapid increase of the data rate urges the demand for high-speed complex modulation schemes with high spectral efficiency and large peak-to-average ratio, and 5G communication base stations have more radio frequency channels, wider bandwidth, higher frequency and larger peak-to-average ratio. The power amplifier and the related baseband circuit are used as main energy consumption elements of the communication base station, and the power consumption accounts for over 50%, so that higher requirements are put on the power back-off efficiency and the linearity of the power amplifier. The efficiency of the common AB type power amplifier is seriously reduced at a backspacing point, and the whole power consumption is large. Therefore, it is required to improve the back-off efficiency of the Power Amplifier, and effective solutions for enhancing the back-off efficiency include Outphasing, envelope tracking and DPA (Driver Power Amplifier), and so on. The DPA adopts two parallel amplifiers, one power amplifier is biased in class AB, the other power amplifier is biased in class C, and the DPA is started to work only in a high-power area.
An ideal DPA has a linear response, but a practical transistor has nonlinear capacitance and transconductance and a miller effect, so the DPA has strong nonlinearity. In order to meet the requirements of signal quality and out-of-band spectral emission, Digital Predistortion (DPD) is used to improve linearity. Today, DPD has been widely used in DPA of high power macro base stations. However, because of hardware cost and power overhead of DPD, the application scenarios of DPD in some small to medium power amplifier units such as routers, handsets, fm stations, etc. are limited. Therefore, the problem of improving the native linearity of DPA is to be solved.
Fig. 1 shows a conventional structure of a Doherty power amplifier, which includes a Main power amplifier (Main) and an auxiliary power amplifier (Aux), wherein the Main power amplifier is biased to class AB, the auxiliary power amplifier is biased to class C, and the output power of the auxiliary power amplifier is α times that of the Main power amplifier. Ro in the figure is the optimal load impedance of the main power amplifier. The post-match network matches the 50 Ω load to Ro/(α + 1). TLM is a quarter-wave line with characteristic impedance Ro, TLA is a quarter-wave line with characteristic impedance 50 omega, and the power of the main and auxiliary power amplifiers can be synthesized in phase. In order to realize the power ratio of alpha times, the transistor gate width of the auxiliary power amplifier is alpha times of that of the main power amplifier, and the optimal load of the auxiliary power amplifier is Ro/alpha. The working principle of the Doherty power amplifier is divided into a low-power area and a high-power area by taking C-type auxiliary power amplifier starting as a boundary. In the low power region, the auxiliary power amplifier is in an off state, and the TLM converts Ro/(α +1) to (α +1) Ro, that is, when Z1 is (α +1) Ro. In the high power region, with the Aux being turned on, Z1 and Z2 gradually change due to the pulling effect of the Aux output signal on the Main output signal, which is the active load pulling. At the saturation point, the effect of this traction effect is maximized, where Z1 is Ro, Z2 is Ro/α, and the Doherty output power reaches a maximum (1+ α) P. Thus, the Doherty-capable power back-off is 20lg (1+ α) (unit: dB).
The auxiliary power amplifier of the Doherty power amplifier with the traditional structure is biased in a C-type state, the grid width of the auxiliary power amplifier is larger than the main power amplifier, the cut-off frequency of the auxiliary power amplifier is lower, so that the gain of the auxiliary power amplifier is lower than that of the main power amplifier, and meanwhile, the auxiliary power amplifier is biased in the C-type state, so that the power of the auxiliary power amplifier is further reduced. Meanwhile, the output quarter-wave line of the main power amplifier can be directly realized by the matching circuit, but the input quarter-wave line is indispensable for the auxiliary power amplifier, the structure can bring loss, and the auxiliary power amplifier gain is further reduced. The auxiliary power amplifier gain can be increased by adjusting the power division ratio, but this method will result in the overall circuit gain being reduced, and at the same time, will reduce the Power Added Efficiency (PAE) of the back-off power point.
Disclosure of Invention
Aiming at the problem of gain compression of the traditional Doherty power amplifier in a high power region, the invention provides a Doherty power amplifier based on self-adaptive bias to improve the auxiliary power amplifier gain and realize high linearity.
In order to achieve the purpose, the invention specifically adopts the following technical scheme:
the Doherty power amplifier based on the self-adaptive bias comprises a power divider, a main power amplifier and an auxiliary power amplifier, wherein the main power amplifier and the auxiliary power amplifier are connected in parallel and are connected with the output end of the power divider; the adaptive bias circuit includes a first transistor and a peripheral circuit.
Further, the peripheral circuit comprises a first capacitor, a second capacitor, a first resistor and a second resistor, wherein one end of the first capacitor is connected with the input end of the main power amplifier, the other end of the first capacitor is connected with the input end of the first transistor, one end of the second capacitor is connected with the output end of the first transistor, the other end of the second capacitor is grounded, one end of the first resistor is connected with the input end of the first transistor, bias voltage is applied to the other end of the first capacitor, and the second resistor is connected with the output end of the first transistor.
Furthermore, the capacitance value of the first capacitor is greater than 10pF, and the capacitance value of the second capacitor is less than 10 pF.
As a preferred embodiment, the first transistor and the auxiliary power amplifier transistor are both current control transistors, wherein a voltage is applied to a collector of the first transistor, and an emitter of the first transistor is connected to the second resistor and then grounded; the adaptive bias circuit satisfies: the current control transistor is biased in class C, when an input signal of the current control transistor is lower than a first threshold value, the current control transistor is cut off, the emitter current of the current control transistor is 0, the second resistor has no voltage drop, the voltage-controlled current source has no current passing, and the auxiliary power amplifier transistor is cut off; when the input signal of the current control transistor is higher than a first threshold value, the current control transistor is started, an emitter generates current, the second resistor generates voltage drop, the voltage-controlled current source passes the current, and the auxiliary power amplifier transistor is started.
Furthermore, after the transistor of the auxiliary power amplifier is started, the size of the second resistor is adjusted, so that the transistor of the auxiliary power amplifier is biased in class AB.
As another preferred embodiment, the first transistor and the auxiliary power amplifier are both voltage-controlled transistors, wherein a drain of the first transistor is grounded, a source of the first transistor is connected to a second resistor, a gate voltage is applied to the first resistor, and a source voltage is applied to the second resistor; the adaptive bias circuit satisfies: the first transistor and the auxiliary power amplifier transistor are initially biased in a class C, when the input signal of the voltage-controlled transistor is lower than a second threshold value, the voltage-controlled transistor is cut off, the source current of the voltage-controlled transistor is 0, the second resistor has no voltage drop, and the auxiliary power amplifier transistor is still biased in the class C; when the input signal of the voltage-controlled transistor is higher than a second threshold value, the voltage-controlled transistor is started, the source electrode generates current, the second resistor generates voltage drop, and the auxiliary power amplifier transistor is biased in an AB type.
Furthermore, a first quarter-wavelength line is arranged at the output end of the main power amplifier, a second quarter-wavelength line is arranged between the power divider and the auxiliary power amplifier, and the first quarter-wavelength line and the rear surface of the auxiliary power amplifier are connected with a rear matching network.
The Doherty power amplifier adopts the self-adaptive bias circuit as the auxiliary power amplifier bias circuit, and compared with the traditional bias structure, the base electrode/grid electrode bias voltage of the auxiliary power amplifier is not a fixed value any more, but a value changing along with an input signal; the auxiliary power amplifier is directly biased in the class AB state, which can significantly improve the gain and linearity of the auxiliary power amplifier, thereby improving the linearity of the entire Doherty power amplifier in the high power region, and slightly improving the back-off efficiency, which is another advantage of this embodiment. The invention overcomes the problems of low gain, poor linearity and the like caused by the fact that the auxiliary power amplifier of the traditional Doherty power amplifier is biased in a C-type state.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic diagram of a conventional Doherty power amplifier;
fig. 2 is a schematic structural diagram of a Doherty power amplifier based on adaptive biasing according to an embodiment of the present invention;
FIG. 3 is a diagram of a conventional auxiliary power amplifier biasing circuit;
FIG. 4 is a block diagram of an adaptive bias circuit according to an embodiment of the present invention;
FIG. 5 is a block diagram of another adaptive bias circuit according to an embodiment of the present invention;
FIG. 6 is a graph of the change of the base current of the auxiliary power amplifier M2 with the output power;
FIG. 7 is an amplitude-amplitude (AM-AM) characteristic simulation diagram;
fig. 8 is a graph of Power Added Efficiency (PAE).
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort shall fall within the protection scope of the present application.
It should be noted that the terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The embodiment is a Doherty power amplifier with a self-adaptive bias circuit, as shown in fig. 2, specifically, the Doherty power amplifier comprises a power divider, a main power amplifier and an auxiliary power amplifier, wherein the main power amplifier and the auxiliary power amplifier are connected in parallel and are both connected with an output end of the power divider, one end of the self-adaptive bias circuit is connected to an input end of the main power amplifier, and the other end of the self-adaptive bias circuit is connected to an input end of the auxiliary power amplifier.
The adaptive bias circuit includes a first transistor and a peripheral circuit. The conventional auxiliary power amplifier biasing circuit structure is shown in fig. 3, wherein the auxiliary power amplifier is biased in class C by a current source of a base, the current source is a voltage-controlled current source, VDCIs a constant value. In the conventional Doherty power amplifier structure, the auxiliary power amplifier is biased in a class C state, and when an input signal of the auxiliary power amplifier is large enough, the auxiliary power amplifier is turned on. In practice, however, the loss of the quarter-wave line at the input end of the auxiliary power amplifier and the reduction of the gain of the high-frequency core cause great difficulties and challenges in designing the class C amplifier.
In this embodiment, the peripheral circuit includes a first capacitor, a second capacitor, a first resistor, and a second resistor, where one end of the first capacitor is connected to the input terminal of the main power amplifier, the other end of the first capacitor is connected to the input terminal of the first transistor, one end of the second capacitor is connected to the output terminal of the first transistor, the other end of the second capacitor is grounded, one end of the first resistor is connected to the input terminal of the first transistor, the other end of the first resistor applies a bias voltage, and the second resistor is connected to the output terminal of the first transistor.
Specifically, the adaptive bias circuit in this embodiment includes two implementation modes:
for one embodiment, for transistors with positive bias voltages, the adaptive bias structure shown in fig. 4 can solve this problem. The first transistor and the auxiliary power amplifier are both current control transistors, wherein voltage is applied to a collector of the first transistor, and an emitter of the first transistor is connected with the second resistor and then grounded. The voltage-controlled current source is connected between the emitter of the first transistor and the base of the transistor of the auxiliary power amplifier.
In fig. 4, the first capacitor C1 is a dc blocking capacitor, since the adaptive bias circuit needs to take a part of signal from the input terminal of the main power amplifier, the dc blocking capacitor C1 is used to isolate the dc voltage of the adaptive bias circuit from the dc voltage of the main power amplifier, and the capacitor C2 is a filter rectification capacitor. The first resistor R1 is a base bias circuit of a current control transistor M1 and is used for reducing the loss of the self-adaptive bias circuit and reducing the influence on the gain of the main power amplifier and the efficiency of a power back-off point as much as possible; the second resistor R2 is used to control the turning on and off of the transistor M2 of the auxiliary power amplifier.
The current control transistor is biased in a C type, when an input signal is lower than a first threshold value, the current control transistor is cut off, the emitter current of the current control transistor is 0, the second resistor has no voltage drop, no current passes through the voltage-controlled current source, and the auxiliary power amplifier transistor is cut off; when the input signal of the current control transistor is higher than the first threshold value, the current control transistor is started, the emitter generates current, the second resistor generates voltage drop, the voltage-controlled current source passes through the voltage-controlled current source, and the auxiliary power amplifier transistor is started.
Specifically, taking the structure shown in fig. 4 as an example, the operating principle is that, firstly, M1 is biased in a C-class state by a base voltage VB of M1, when an input signal is lower than a first threshold value, M1 is turned off, an emitter current is 0, R2 has no voltage drop, DC-I is 0, and M2 is turned off; when the input signal of the M1 is higher than the first threshold value, the M1 is turned on, the emitter generates current, a voltage drop is generated in the resistor R2, the voltage-controlled current source DC-I generates current, and the transistor M2 is turned on.
By adjusting the size of the second resistor R2, M2 can be biased in class AB.
M1 can be turned on at a certain value by adjusting the base voltage VB of M1, i.e., the first threshold is determined by the base voltage of M1.
In another embodiment, for a GaN-based transistor, the gate threshold voltage is a negative value, in this case, the first transistor and the auxiliary power amplifier transistor are both voltage-controlled transistors, wherein the drain of the first transistor is grounded, and the source is connected to the second resistor; a gate voltage is applied to the first resistor, and a source voltage is applied to the second resistor.
As shown in the circuit of fig. 5, VS is the source voltage of the voltage controlled transistor M1, which is adjusted to bias M2 in class C, and the gate voltage VG of M1 is adjusted to bias M1 in class C as well.
The working principle is as follows: when the input signal of the voltage-controlled transistor is lower than a second threshold value, the voltage-controlled transistor is cut off, the source current of the voltage-controlled transistor is 0, the second resistor has no voltage drop, and the auxiliary power amplifier transistor is still biased in a C type; when the input signal of the voltage-controlled transistor is higher than a second threshold value, the voltage-controlled transistor is started, the source electrode generates current, the second resistor generates voltage drop, and the auxiliary power amplifier transistor is biased in an AB type.
Preferably, in the two embodiments, the capacitance value of the first capacitor is greater than 10pF, and the capacitance value of the second capacitor is less than 10 pF.
In general, the Doherty power amplifier based on adaptive bias further has a first quarter-wave line at the output end of the main power amplifier, a second quarter-wave line is arranged between the power divider and the auxiliary power amplifier, and the first quarter-wave line and the rear of the auxiliary power amplifier are connected to a rear matching network, as shown in fig. 2, TL isMIs the first quarter-wave line, TLAIs the second fourA wavelength line.
Compared with the traditional biasing structure, the base electrode/grid electrode biasing voltage of the auxiliary power amplifier is not a fixed value any more, but a value changing along with an input signal; the auxiliary power amplifier is directly biased in the class AB state, which can significantly improve the gain and linearity of the auxiliary power amplifier, thereby improving the linearity of the entire Doherty power amplifier in the high power region, and slightly improving the back-off efficiency, which is another advantage of this embodiment.
Based on the adaptive bias structure shown in fig. 5, a Doherty power amplifier with a driving stage is built, and simulation results of the Doherty power amplifier and a conventional Doherty power amplifier are shown in fig. 6, fig. 7 and fig. 8. Fig. 6 is a curve of the change of the base current of the auxiliary power amplifier M2 with the output power, and it can be seen that the base current of the auxiliary power amplifier with adaptive bias is significantly increased in the high power region compared with the conventional structure, which proves that the adaptive bias structure can bias the auxiliary power amplifier in class AB in the high power region. Fig. 7 shows an amplitude-amplitude (AM-AM) characteristic, and the adaptive bias structure can significantly reduce the gain compression of Doherty in a high power region and improve the flatness. Fig. 8 is a plot of Power Added Efficiency (PAE) calculated as a saturated power backoff of 9dB, with the PAE for the adaptive bias structure being slightly higher than the conventional structure at the backoff point of 29 dBm.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (7)
1. The Doherty power amplifier based on the self-adaptive bias comprises a power divider, a main power amplifier and an auxiliary power amplifier, wherein the main power amplifier and the auxiliary power amplifier are connected in parallel and are connected with the output end of the power divider; the adaptive bias circuit includes a first transistor and a peripheral circuit.
2. The adaptive bias-based Doherty power amplifier of claim 1, wherein the peripheral circuit comprises a first capacitor, a second capacitor, a first resistor and a second resistor, wherein the first capacitor has one end connected to the input terminal of the main power amplifier and the other end connected to the input terminal of the first transistor, the second capacitor has one end connected to the output terminal of the first transistor and the other end grounded, the first resistor has one end connected to the input terminal of the first transistor and the other end applying a bias voltage, and the second resistor is connected to the output terminal of the first transistor.
3. The adaptive bias-based Doherty power amplifier of claim 2 wherein the capacitance value of the first capacitor is greater than 10pF and the capacitance value of the second capacitor is less than 10 pF.
4. The adaptive bias-based Doherty power amplifier of claim 2, wherein the first transistor and the auxiliary power amplifier transistor are both current control transistors, wherein a voltage is applied to a collector of the first transistor, and an emitter of the first transistor is grounded after being connected with the second resistor, and further comprising a voltage-controlled current source connected between the emitter of the first transistor and a base of the auxiliary power amplifier transistor; the adaptive bias circuit satisfies: the current control transistor is biased in class C, when an input signal of the current control transistor is lower than a first threshold value, the current control transistor is cut off, the current of an emitter of the current control transistor is 0, the second resistor has no voltage drop, no current passes through the voltage-controlled current source, and the transistor of the auxiliary power amplifier is cut off; when the input signal of the current control transistor is higher than a first threshold value, the current control transistor is started, an emitter generates current, the second resistor generates voltage drop, the voltage-controlled current source passes the current, and the auxiliary power amplifier transistor is started.
5. The adaptive bias-based Doherty power amplifier of claim 4, wherein after the auxiliary power amplifier transistor is turned on, the size of the second resistor is adjusted to bias the auxiliary power amplifier transistor in class AB.
6. The adaptive bias-based Doherty power amplifier of claim 2, wherein the first transistor and the auxiliary power amplifier transistor are voltage-controlled transistors, wherein a drain of the first transistor is grounded, a source of the first transistor is connected to a second resistor, a gate voltage is applied to the first resistor, and a source voltage is applied to the second resistor; the adaptive bias circuit satisfies: the first transistor and the auxiliary power amplifier transistor are initially biased in a class C, when the input signal of the voltage-controlled transistor is lower than a second threshold value, the voltage-controlled transistor is cut off, the source current of the voltage-controlled transistor is 0, the second resistor has no voltage drop, and the auxiliary power amplifier transistor is still biased in the class C; when the input signal of the voltage-controlled transistor is higher than a second threshold value, the voltage-controlled transistor is started, the source electrode generates current, the second resistor generates voltage drop, and the auxiliary power amplifier transistor is biased in an AB type.
7. The Doherty power amplifier based on adaptive bias of claims 1-6, wherein a first quarter-wave line is arranged at the output end of the main power amplifier, a second quarter-wave line is arranged between the power divider and the auxiliary power amplifier, and a post-matching network is connected behind the first quarter-wave line and the auxiliary power amplifier.
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| CN115567012A (en) * | 2022-11-22 | 2023-01-03 | 成都明夷电子科技有限公司 | Self-adaptive broadband Doherty power amplifier |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060017509A1 (en) * | 2004-07-21 | 2006-01-26 | Veitschegger William K | Auxiliary transistor gate bias control system and method |
| US20090179703A1 (en) * | 2008-01-15 | 2009-07-16 | Nec Electronics Corporation | High efficiency power amplifier |
| CN106134071A (en) * | 2014-04-09 | 2016-11-16 | 高通股份有限公司 | Circuit and method for current offset power amplifier |
| CN109428557A (en) * | 2017-08-25 | 2019-03-05 | 株式会社村田制作所 | Power amplification circuit |
| CN109672411A (en) * | 2018-12-19 | 2019-04-23 | 重庆邮电大学 | A kind of asymmetric broadband Doherty power amplifier suitable for 5G low-frequency range full frequency band |
| CN109818587A (en) * | 2017-11-21 | 2019-05-28 | 锐迪科微电子科技（上海）有限公司 | A kind of adaptive-biased radio-frequency power amplifier |
| CN210490802U (en) * | 2019-12-06 | 2020-05-08 | 成都龙腾中远信息技术有限公司 | Doherty power amplifier |
| CN111510076A (en) * | 2020-05-18 | 2020-08-07 | 优镓科技(北京)有限公司 | class-AB driven Doherty power amplifier, base station and mobile terminal |
| CN111586896A (en) * | 2020-05-11 | 2020-08-25 | 优镓科技(北京)有限公司 | Integrated dual-frequency Doherty power amplifier, base station and mobile terminal |
| WO2021042093A2 (en) * | 2020-12-31 | 2021-03-04 | Futurewei Technologies, Inc. | Dynamic bias for doherty pa |
| CN112953425A (en) * | 2021-04-02 | 2021-06-11 | 重庆邮电大学 | Balanced type broadband high-power amplifier based on band-pass filter |
| CN113395045A (en) * | 2021-05-31 | 2021-09-14 | 锐石创芯（深圳）科技有限公司 | Doherty power amplifier, system and control method |
-
2022
- 2022-02-25 CN CN202210180628.9A patent/CN114553151B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060017509A1 (en) * | 2004-07-21 | 2006-01-26 | Veitschegger William K | Auxiliary transistor gate bias control system and method |
| US20090179703A1 (en) * | 2008-01-15 | 2009-07-16 | Nec Electronics Corporation | High efficiency power amplifier |
| CN106134071A (en) * | 2014-04-09 | 2016-11-16 | 高通股份有限公司 | Circuit and method for current offset power amplifier |
| CN109428557A (en) * | 2017-08-25 | 2019-03-05 | 株式会社村田制作所 | Power amplification circuit |
| CN109818587A (en) * | 2017-11-21 | 2019-05-28 | 锐迪科微电子科技（上海）有限公司 | A kind of adaptive-biased radio-frequency power amplifier |
| CN109672411A (en) * | 2018-12-19 | 2019-04-23 | 重庆邮电大学 | A kind of asymmetric broadband Doherty power amplifier suitable for 5G low-frequency range full frequency band |
| CN210490802U (en) * | 2019-12-06 | 2020-05-08 | 成都龙腾中远信息技术有限公司 | Doherty power amplifier |
| CN111586896A (en) * | 2020-05-11 | 2020-08-25 | 优镓科技(北京)有限公司 | Integrated dual-frequency Doherty power amplifier, base station and mobile terminal |
| CN111510076A (en) * | 2020-05-18 | 2020-08-07 | 优镓科技(北京)有限公司 | class-AB driven Doherty power amplifier, base station and mobile terminal |
| WO2021042093A2 (en) * | 2020-12-31 | 2021-03-04 | Futurewei Technologies, Inc. | Dynamic bias for doherty pa |
| CN112953425A (en) * | 2021-04-02 | 2021-06-11 | 重庆邮电大学 | Balanced type broadband high-power amplifier based on band-pass filter |
| CN113395045A (en) * | 2021-05-31 | 2021-09-14 | 锐石创芯（深圳）科技有限公司 | Doherty power amplifier, system and control method |
Non-Patent Citations (5)
| Title |
|---|
| A. M. ELELIMY ABOUNEMRA等: "Systematic Design Methodology of Broadband Doherty Amplifier Using Unified Matching/Combining Networks With an Application to GaN MMIC Design", 《IEEE ACCESS》 * |
| HAIFENG LYU等: "Linearity-Enhanced Quasi-Balanced Doherty Power Amplifier With Mismatch Resilience Through Series/Parallel Reconfiguration for Massive MIMO", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》 * |
| SHUN WAN等: "A High-Efficiency Two-Stage GaAs HBT Doherty Power Amplifier With Thermal Compensation for WLAN Application", 《2021 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS)》 * |
| 周正轩: "基于Doherty结构的高效率射频功率放大器设计", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
| 狄皓月等: "高效线性氮化镓射频功放芯片模组研究", 《移动通信》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115567012A (en) * | 2022-11-22 | 2023-01-03 | 成都明夷电子科技有限公司 | Self-adaptive broadband Doherty power amplifier |
| CN115567012B (en) * | 2022-11-22 | 2023-03-10 | 成都明夷电子科技有限公司 | Self-adaptive broadband Doherty power amplifier |
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