CN101394152B - Radio frequency power amplifier circuit - Google Patents
Radio frequency power amplifier circuit Download PDFInfo
- Publication number
- CN101394152B CN101394152B CN200710094091XA CN200710094091A CN101394152B CN 101394152 B CN101394152 B CN 101394152B CN 200710094091X A CN200710094091X A CN 200710094091XA CN 200710094091 A CN200710094091 A CN 200710094091A CN 101394152 B CN101394152 B CN 101394152B
- Authority
- CN
- China
- Prior art keywords
- npn pipe
- described npn
- resistance
- collector electrode
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a circuit of a radio-frequency power amplifier, which comprises a bias circuit and an amplification circuit. A resistance compensating structure is designed in the bias circuit, that is, a compensating resistance is added to the bias circuit. The added compensating resistance has two functions: (1) increasing the voltage compensation of the bias circuit and reducing the dependency of the circuit on the bias voltage; and (2) enhancing the temperature compensation of the bias circuit. The change of the bias voltage or temperature causes the electric current changes of Q4and Q5 or Q7 and Q8 of NPN tube, the change quantity of VBE of voltage generated by the electric current changes between a base electrode and a collector electrode can be compensated efficiently by the change quantity of two ends of R*1 or R*2, thereby ensuring the circuit is not sensitive to the bias voltage and the temperature.
Description
Technical field
The present invention relates to a kind of analog circuit, especially a kind of radio-frequency (RF) power amplifier circuit.
Background technology
In modern wireless communication systems, radio-frequency power amplifier is a critical component of realizing the radiofrequency signal wireless transmission.The major function of radio-frequency power amplifier is modulated radiofrequency signal is amplified to required performance number, transfers to the antenna emission, guarantees that the receiver in certain zone can receive signal.As the radio-frequency (RF) power amplifier circuit of radio frequency part critical component, its performance produces directly influence to communication quality.Radio-frequency (RF) power transistor is the core component of radio-frequency power amplifier, and its operating state is determined by biasing circuit, so the characteristic of biasing circuit directly has influence on the performance of power amplifier.When the bias voltage instability or because variations in temperature causes transistorized knot pressure drop change, the capital causes the characteristic of radio frequency amplifier tube to produce bigger variation, and then make power amplifier output signal produce bigger variation, cause the uncertainty of power amplifier output signal.The biasing circuit that has voltage compensation and temperature-compensating can address the above problem well, thereby radio frequency amplifier is stably worked under the applied environment of complexity.
In order to address this problem, existing technology is to adopt traditional current-mirror structure as biasing circuit, and as shown in Figure 1, square frame marks part and is current-mirror bias circuit among Fig. 1, comprise two NPN pipe Q1 and Q2, the collector electrode of described NPN pipe Q1 is connected to voltage bias end V by resistance R 1
BIAS, the collector electrode of described NPN pipe Q1 is connected with the base stage of himself, the grounded emitter of described NPN pipe, and the base stage of described NPN pipe Q2 is connected with the base stage of described NPN pipe Q1, and the collector electrode of described NPN pipe Q2 meets biasing circuit power end V
CBThis biasing circuit provides biasing for the amplifying circuit of being made up of power tube Q3 etc., and amplifying circuit comprises NPN pipe Q3, the grounded emitter of described NPN pipe Q3, and the base stage of described NPN pipe Q3 is by a capacitor C
InConnect input signal, the collector electrode of described NPN pipe Q3 connects power end V
CC, simultaneously by a capacitor C
OutAfterwards as signal output part.Biasing circuit act as Temperature Compensation in this circuit: when temperature raises, and the base stage of power tube Q3 (B)-emitter (E) knot pressure drop V
BE3Reduce the feasible electric current I that flows through Q3
dIncrease the V of Q1, Q2 in the biasing circuit
BE1And V
BE2Also decrease, owing to be in the V of the Q1 of current mirror one side
BE1Reduction will be to the Q2 of current mirror opposite side, the V of Q3
BE2And V
BE3Reduction compensate to some extent, thereby make the electric current I of power tube Q3
dVariation with temperature change reduces.
But this structure is to bias voltage V
BIASChange very sensitive, limited to the Temperature Compensation effect simultaneously, when bias voltage produces fluctuation, can cause the power amplifier output characteristic to produce bigger variation.
Summary of the invention
Technical problem to be solved by this invention provides a kind of radio-frequency (RF) power amplifier circuit, can reduce the variable quantity of power amplifier output characteristic because of voltage and temperature change, thereby improves the stability of power amplifier.
For solving the problems of the technologies described above, the technical scheme of radio-frequency (RF) power amplifier circuit of the present invention is, comprises biasing circuit and amplifying circuit, and described amplifying circuit comprises NPN pipe Q3, the grounded emitter of described NPN pipe Q3, and the base stage of described NPN pipe Q3 is by a capacitor C
InConnect input signal, the collector electrode of described NPN pipe Q3 connects power end V
CC, simultaneously by a capacitor C
OutAs signal output part, described biasing circuit comprises three NPN pipe Q4, Q5 and Q6 afterwards, collector electrode and the voltage bias end V of described NPN pipe Q4
BIASBetween be connected in series with resistance R 2 and compensating resistance R
X1, wherein resistance R 2 is near described voltage bias end V
BIAS, compensating resistance R
X1Near the collector electrode of described NPN pipe Q4, the base stage of described NPN pipe Q4 is connected to described compensating resistance R
X1An end that is connected with resistance R 2, the emitter of described NPN pipe Q4 is connected to the collector electrode of described NPN pipe Q5, the base stage of described NPN pipe Q5 is connected to the collector electrode of himself, the grounded emitter of described NPN pipe Q5, the collector electrode of described NPN pipe Q4 is also connected to the base stage of described NPN pipe Q6, and the collector electrode of described NPN pipe Q6 is connected to biasing circuit power end V
CB, the emitter of described NPN pipe Q6 is connected to the base stage of the NPN pipe Q3 of described amplifying circuit.
Another technical scheme of radio-frequency (RF) power amplifier circuit of the present invention is, comprises biasing circuit and amplifying circuit, and described amplifying circuit comprises NPN pipe Q3, the grounded emitter of described NPN pipe Q3, and the base stage of described NPN pipe Q3 is by a capacitor C
InConnect input signal, the collector electrode of described NPN pipe Q3 connects power end V
CC, simultaneously by a capacitor C
OutAs signal output part, described biasing circuit comprises three NPN pipe Q7, Q8 and Q9 afterwards, collector electrode and the voltage bias end V of described NPN pipe Q7
BIASBetween be connected in series with resistance R 3 and compensating resistance R
X2, wherein resistance R 32 is near described voltage bias end V
BIAS, compensating resistance R
X2Near the collector electrode of described NPN pipe Q7, the grounded emitter of described NPN pipe Q7, the base stage of described NPN pipe Q8 is connected to described compensating resistance R
X2An end that is connected with resistance R 3, the emitter of described NPN pipe Q8 is by resistance R 4 ground connection, the emitter of simultaneously described NPN pipe Q8 also connects the base stage of described NPN pipe Q7, the base stage of described NPN pipe Q9 is connected to the collector electrode of described NPN pipe Q7, the emitter of described NPN pipe Q9 is by resistance R 5 ground connection, and the collector electrode of described NPN pipe Q8 and Q9 all is connected to biasing circuit power end V
CB, the emitter of described NPN pipe Q9 is connected to the base stage of described NPN pipe Q3.
The present invention designs the circuit structure of resnstance transformer in biasing circuit, add compensating resistance, can effectively compensate, reduce the dependence of circuit bias voltage to voltage, strengthen temperature compensation function simultaneously, improved the stability and the applicability of power amplifier.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the existing circuit diagram that has the radio-frequency (RF) power amplifier circuit of biasing circuit;
Fig. 2 is the circuit diagram of a kind of technical scheme of radio-frequency (RF) power amplifier circuit of the present invention;
Fig. 3 is the circuit diagram of the another kind of technical scheme of radio-frequency (RF) power amplifier circuit of the present invention.
Embodiment
Radio-frequency (RF) power amplifier circuit of the present invention, its circuit diagram comprise biasing circuit and amplifying circuit as shown in Figure 2, and described amplifying circuit comprises NPN pipe Q3, the grounded emitter of described NPN pipe Q3, and the base stage of described NPN pipe Q3 is by a capacitor C
InConnect input signal, the collector electrode of described NPN pipe Q3 connects power end V
CC, simultaneously by a capacitor C
OutAs signal output part, it is characterized in that afterwards described biasing circuit comprises three NPN pipe Q4, Q5 and Q6, collector electrode and the voltage bias end V of described NPN pipe Q4
BIASBetween be connected in series with resistance R 2 and compensating resistance R
X1, wherein resistance R 2 is near described voltage bias end V
BIAS, compensating resistance R
X1Near the collector electrode of described NPN pipe Q4, the base stage of described NPN pipe Q4 is connected to described compensating resistance R
X1An end that is connected with resistance R 2, the emitter of described NPN pipe Q4 is connected to the collector electrode of described NPN pipe Q5, the base stage of described NPN pipe Q5 is connected to the collector electrode of himself, the grounded emitter of described NPN pipe Q5, the collector electrode of described NPN pipe Q4 is also connected to the base stage of described NPN pipe Q6, and the collector electrode of described NPN pipe Q6 is connected to biasing circuit power end V
CB, the emitter of described NPN pipe Q6 is connected to the base stage of the NPN pipe Q3 of described amplifying circuit.
As shown in Figure 2, between the base stage of the NPN of biasing circuit pipe Q4 and collector electrode, add compensating resistance R
X1As bias voltage V
BIASDuring increase, by electric current I
1Increase the base stage and the emitter voltage V that cause NPN pipe Q4
BE4Base stage and emitter voltage V with NPN pipe Q5
BE5Increase V
BE4And V
BE5Increase can be effectively by R
X1The increase of the voltage drop at two ends compensates.As bias voltage V
BIASWhen reducing, by electric current I
1Reduce to cause base stage and the emitter voltage V of NPN pipe Q4
BE4Base stage and emitter voltage V with NPN pipe Q5
BE5Reduce V
BE4And V
BE5Reduce can be effectively by R
X1The voltage drop at two ends reduce compensate.Thereby, make the V that supplies with Q6
BE6To V
BIASInsensitive, thereby the dc point that makes power tube is to V
BIASInsensitive.
When temperature raises, the V of NPN pipe Q4
BE4Reduce electric current I
1Increase the opposite side electric current I thereupon
2The amplitude that increases can be effectively by R
X1The increase of the voltage drop at two ends reduces, and NPN is managed the influence reduction of the output characteristic of Q6, Q3 thereby elevate the temperature.When temperature lowers, the V of NPN pipe Q4
BE4Increase electric current I
1Decrease the opposite side electric current I
2The amplitude that reduces can be effectively by R
X1The voltage drop at two ends reduce compensate, thereby the influence that elevates the temperature to the output characteristic of NPN pipe Q6, Q3 reduces.
In foregoing circuit, transistor Q3, Q4, Q5, Q6 select the identical NPN pipe of junction area for use, suppose bias voltage V
BIASWhen increasing Δ V, electric current I
1Increase Δ I
1, the V of Q4, Q5
BEEach increases Δ V
BE, the base voltage V of transistor Q6
bChange Δ V
b
Then have
ΔV＝ΔI
1×R
2+2×ΔV
BE
ΔV
b＝[(V
BIAS+ΔV)-(I
1+ΔI
1)(R
2+R
X)]-[V
BIAS-I
1(R
2+R
x)]＝ΔV-ΔI
1(R
2+R
x)
Therefore
ΔV
b＝2×ΔV
BE-ΔI
1×R
x。
By following formula as can be known, work as R
X1Value R
XWhen suitable, can compensate V
BIASThe change amount to V
bInfluence, make Δ V
bBe tending towards 0.
The present invention also provides the another kind of technical scheme of radio-frequency (RF) power amplifier circuit, as shown in Figure 3, comprises biasing circuit and amplifying circuit, and described amplifying circuit comprises NPN pipe Q3, the grounded emitter of described NPN pipe Q3, and the base stage of described NPN pipe Q3 is by a capacitor C
InConnect input signal, the collector electrode of described NPN pipe Q3 connects power end V
CC, simultaneously by a capacitor C
OutAs signal output part, described biasing circuit comprises three NPN pipe Q7, Q8 and Q9 afterwards, collector electrode and the voltage bias end V of described NPN pipe Q7
BIASBetween be connected in series with resistance R 3 and compensating resistance R
X2, wherein resistance R 32 is near described voltage bias end V
BIAS, compensating resistance R
X2Near the collector electrode of described NPN pipe Q7, the grounded emitter of described NPN pipe Q7, the base stage of described NPN pipe Q8 is connected to described compensating resistance R
X2An end that is connected with resistance R 3, the emitter of described NPN pipe Q8 is by resistance R 4 ground connection, the emitter of simultaneously described NPN pipe Q8 also connects the base stage of described NPN pipe Q7, the base stage of described NPN pipe Q9 is connected to the collector electrode of described NPN pipe Q7, the emitter of described NPN pipe Q9 is by resistance R 5 ground connection, and the collector electrode of described NPN pipe Q8 and Q9 all is connected to biasing circuit power end V
CB, the emitter of described NPN pipe Q9 is connected to the base stage of described NPN pipe Q3.
In foregoing circuit, add compensating resistance R between the base stage of the collector electrode of the NPN of biasing circuit pipe Q7 and NPN pipe Q8
X2, the base stage of NPN pipe Q9 links to each other with the collector electrode of Q7.In this technical scheme, the resnstance transformer structure that biasing circuit adopts is the variable form of current ratio, can realize by the ratio of oxide-semiconductor control transistors Q9 and Q8 and the ratio of R5 and R4.When transistor Q7 identical with the Q8 junction area, the junction area of transistor Q9 and Q10 be Q7 M doubly, the resistance of resistance R 4 be R5 M doubly, then flow through the electric current I of transistor Q9 collector electrode
5Be to flow through transistor Q8 collector current I approximately
4M doubly, therefore can be by oxide-semiconductor control transistors Q9 and the ratio of Q8 and the ratio realization of R5 and R4.
Transistor Q7, Q8 select the identical NPN pipe of junction area for use, and base voltage is used V respectively
B7, V
B8Expression.Transistor Q9 junction area is M a times of Q7.Suppose bias voltage V
BIASWhen increasing Δ V, electric current I
3Increase Δ I
3, the V of Q7, Q8
BEIncrease Δ V respectively
BE7, Δ V
BE8, the V of Q9
BEIncrease Δ V
BE9, the base voltage V of transistor Q9
bChange Δ V
b
Because
V
b7＝V
BE7，V
b8＝V
b7+V
BE8＝V
BE7+V
BE8
Then have
V
BIAS＝I
3×R
3+V
b8＝I
3×R
3+V
BE7+V
BE8
ΔV＝ΔIΔI
3×R
3+ΔV
BE7+ΔV
BE8
ΔV
b＝[(V
BIAS+ΔV)-(I
3+ΔI
3)(R
3+R
X)]-[V
BIAS-I
3(R
3+R
x)]＝ΔV-ΔI
3(R
3+R
x)
Therefore
ΔV
b＝ΔI
3×R
3+ΔV
BE7+ΔV
BE8-ΔI
3(R
3+R
x)＝ΔV
BE7+ΔV
BE8-ΔI
3×R
x
By following formula as can be known, work as R
X2Value R
XWhen suitable, can compensate V
BIASThe change amount to V
bInfluence, make Δ V
bBe tending towards 0.
In above-mentioned compensation process, compensating resistance R
X2Value determined by concrete biasing circuit.
The present invention designs the resnstance transformer structure in biasing circuit, add compensating resistance.The compensating resistance that is added plays two effects: 1. increase the voltage compensation effect of biasing circuit, reduce the dependence of circuit to bias voltage; 2. strengthen the temperature compensation function of biasing circuit.Owing to bias voltage change or temperature change cause the variation of the electric current of NPN pipe Q4 and Q5 or Q7 and Q8, change voltage V between the base stage that causes and the collector electrode by electric current
BEVariable quantity can be effectively by R
X1Or R
X2The voltage drop variable quantity at two ends compensates, thereby makes circuit to bias voltage and temperature-insensitive.
Claims (2)
1. a radio-frequency (RF) power amplifier circuit comprises biasing circuit and amplifying circuit, and described amplifying circuit comprises NPN pipe Q3, the grounded emitter of described NPN pipe Q3, and the base stage of described NPN pipe Q3 is by a capacitor C
InConnect input signal, the collector electrode of described NPN pipe Q3 connects power end V
CC, simultaneously by a capacitor C
OutAs signal output part, it is characterized in that afterwards described biasing circuit comprises three NPN pipe Q4, Q5 and Q6, collector electrode and the voltage bias end V of described NPN pipe Q4
BIASBetween be connected in series with resistance R 2 and compensating resistance R
X1, wherein resistance R 2 is near described voltage bias end V
BIAS, compensating resistance R
X1Near the collector electrode of described NPN pipe Q4, the base stage of described NPN pipe Q4 is connected to described compensating resistance R
X1An end that is connected with resistance R 2, the emitter of described NPN pipe Q4 is connected to the collector electrode of described NPN pipe Q5, the base stage of described NPN pipe Q5 is connected to the collector electrode of himself, the grounded emitter of described NPN pipe Q5, the collector electrode of described NPN pipe Q4 is also connected to the base stage of described NPN pipe Q6, and the collector electrode of described NPN pipe Q6 is connected to biasing circuit power end V
CB, the emitter of described NPN pipe Q6 is connected to the base stage of the NPN pipe Q3 of described amplifying circuit.
2. a radio-frequency (RF) power amplifier circuit comprises biasing circuit and amplifying circuit, and described amplifying circuit comprises NPN pipe Q3, the grounded emitter of described NPN pipe Q3, and the base stage of described NPN pipe Q3 is by a capacitor C
InConnect input signal, the collector electrode of described NPN pipe Q3 connects power end V
CC, simultaneously by a capacitor C
OutAs signal output part, it is characterized in that afterwards described biasing circuit comprises three NPN pipe Q7, Q8 and Q9, collector electrode and the voltage bias end V of described NPN pipe Q7
BIASBetween be connected in series with resistance R 3 and compensating resistance R
X2, wherein resistance R 3 is near described voltage bias end V
BIAS, compensating resistance R
X2Near the collector electrode of described NPN pipe Q7, the grounded emitter of described NPN pipe Q7, the base stage of described NPN pipe Q8 is connected to described compensating resistance R
X2An end that is connected with resistance R 3, the emitter of described NPN pipe Q8 is by resistance R 4 ground connection, the emitter of simultaneously described NPN pipe Q8 also connects the base stage of described NPN pipe Q7, the base stage of described NPN pipe Q9 is connected to the collector electrode of described NPN pipe Q7, the emitter of described NPN pipe Q9 is by resistance R 5 ground connection, and the collector electrode of described NPN pipe Q8 and Q9 all is connected to biasing circuit power end V
CB, the emitter of described NPN pipe Q9 is connected to the base stage of described NPN pipe Q3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710094091XA CN101394152B (en) | 2007-09-20 | 2007-09-20 | Radio frequency power amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710094091XA CN101394152B (en) | 2007-09-20 | 2007-09-20 | Radio frequency power amplifier circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101394152A CN101394152A (en) | 2009-03-25 |
| CN101394152B true CN101394152B (en) | 2010-08-11 |
Family
ID=40494274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710094091XA Active CN101394152B (en) | 2007-09-20 | 2007-09-20 | Radio frequency power amplifier circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101394152B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3772177A1 (en) * | 2019-07-31 | 2021-02-03 | NXP USA, Inc. | Temperature compensation circuit and temperature compensated amplifier circuit |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102111113B (en) * | 2009-12-28 | 2012-09-26 | 中国科学院微电子研究所 | Serially concatenated multi-level radio-frequency power amplifier and front-end transmitter |
| CN102006017B (en) * | 2010-12-02 | 2013-11-06 | 无锡中普微电子有限公司 | Biasing circuit and power amplifier circuit thereof |
| CN102255605A (en) * | 2011-01-14 | 2011-11-23 | 苏州英诺迅科技有限公司 | Adjustable active biasing circuit for radiofrequency power amplifier |
| CN102185566B (en) * | 2011-01-21 | 2013-03-13 | 锐迪科创微电子（北京）有限公司 | Radio frequency front end circuit and mobile terminal with the circuit |
| JP5673361B2 (en) * | 2011-05-31 | 2015-02-18 | 三菱電機株式会社 | Power amplifier |
| CN105765863B (en) * | 2014-01-20 | 2019-05-07 | 华为技术有限公司 | A kind of power amplifier stabilizing circuit and transmitter |
| CN103916089B (en) * | 2014-03-21 | 2017-11-07 | 锐迪科科技有限公司 | A kind of radio-frequency power amplifier and its method of work |
| KR102193622B1 (en) * | 2016-06-29 | 2020-12-22 | 마이크론 테크놀로지, 인크 | Voltage generating circuit |
| US10249348B2 (en) | 2017-07-28 | 2019-04-02 | Micron Technology, Inc. | Apparatuses and methods for generating a voltage in a memory |
| CN110120788B (en) * | 2019-06-06 | 2024-02-20 | 广东工业大学 | Bias circuit for power amplifier and power amplifier |
| CN110784182A (en) * | 2019-11-26 | 2020-02-11 | 北京无线电测量研究所 | Bias circuit of bipolar junction transistor |
| CN112751534A (en) * | 2020-12-23 | 2021-05-04 | 西安博瑞集信电子科技有限公司 | Active bias circuit with temperature compensation and cascode amplifier |
| CN216437157U (en) * | 2021-11-18 | 2022-05-03 | 深圳飞骧科技股份有限公司 | Self-adaptive linear bias circuit, radio frequency power amplifier and radio frequency chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333677B1 (en) * | 2000-10-10 | 2001-12-25 | Rf Micro Devices, Inc. | Linear power amplifier bias circuit |
| US6456163B1 (en) * | 2001-03-08 | 2002-09-24 | Koninklijke Philips Electronics N.V. | High-frequency amplifier circuit having a directly-connected bias circuit |
| WO2003049279A1 (en) * | 2001-12-07 | 2003-06-12 | Koninklijke Philips Electronics N.V. | Amplifier with bias compensation using a current mirror circuit |
| CN1905356A (en) * | 2005-07-28 | 2007-01-31 | 中兴通讯股份有限公司 | Low delay temp compensation bias circuit for TDD mode |
-
2007
- 2007-09-20 CN CN200710094091XA patent/CN101394152B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333677B1 (en) * | 2000-10-10 | 2001-12-25 | Rf Micro Devices, Inc. | Linear power amplifier bias circuit |
| US6456163B1 (en) * | 2001-03-08 | 2002-09-24 | Koninklijke Philips Electronics N.V. | High-frequency amplifier circuit having a directly-connected bias circuit |
| WO2003049279A1 (en) * | 2001-12-07 | 2003-06-12 | Koninklijke Philips Electronics N.V. | Amplifier with bias compensation using a current mirror circuit |
| CN1905356A (en) * | 2005-07-28 | 2007-01-31 | 中兴通讯股份有限公司 | Low delay temp compensation bias circuit for TDD mode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3772177A1 (en) * | 2019-07-31 | 2021-02-03 | NXP USA, Inc. | Temperature compensation circuit and temperature compensated amplifier circuit |
| JP7049396B2 (en) | 2019-07-31 | 2022-04-06 | エヌエックスピー ユーエスエイ インコーポレイテッド | Temperature compensation circuit and temperature compensation amplifier circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101394152A (en) | 2009-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101394152B (en) | Radio frequency power amplifier circuit | |
| CN101478293B (en) | Temperature compensation power amplifier circuit | |
| CN110120788B (en) | Bias circuit for power amplifier and power amplifier | |
| JP4087336B2 (en) | Active bias circuit | |
| US7639080B2 (en) | Radio frequency amplifier circuit and mobile communication terminal using the same | |
| CN110190824B (en) | Active bias network and radio frequency power amplifier | |
| US6946913B2 (en) | High frequency amplifier circuit | |
| US20010038313A1 (en) | Bias network for high efficiency RF linear power amplifier | |
| KR100547236B1 (en) | Bias Stabilization Circuit in Power Amplifier | |
| KR20060114339A (en) | Single chip power amplifier and envelope modulator | |
| WO2015002294A1 (en) | Power amplification module | |
| US10498291B2 (en) | Bias circuit and power amplifier circuit | |
| CN109150115B (en) | Radio frequency power amplifier bias circuit | |
| JP2004282130A (en) | Bias current supply circuit and amplification circuit | |
| KR100830812B1 (en) | High-frequency amplifier circuit with negative impedance cancellation | |
| KR20130060379A (en) | Power amplfier | |
| CN112653402A (en) | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process | |
| KR100508062B1 (en) | Digital audio amplifier including phase lead-lag compensator for increasing self-oscillation frequency | |
| US6529065B2 (en) | Circuit configuration for controlling the operating point of a power amplifier | |
| CN111953307A (en) | Temperature correction circuit and method of operating a power amplifier | |
| JP2006527957A (en) | Output power detection circuit | |
| US6664856B2 (en) | Circuit configuration for setting the operating point of a radiofrequency transistor and amplifier circuit | |
| US9444415B2 (en) | Power amplifier spurious cancellation | |
| CN115001410A (en) | Bias circuit suitable for linear power amplifier | |
| JP2008017453A (en) | Radio frequency amplifier circuit, and mobile communication terminal using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: RDA TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: RDA MICROELECTRONICS (SHANGHAI) CO., LTD. Effective date: 20100427 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 ROOM 302, BUILDING 2, NO.690, BIBO ROAD, PUDONG NEW DISTRICT, SHANGHAI CITY TO: HOUSE 22, ZHONGYIN BUILDING, MIDDLE 1ST ROAD, HONG KONG GARDEN |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20100427 Address after: 22 floor, Bank of China Tower, 1 Garden Road, Hongkong Applicant after: RDA Microelectronics Co., Ltd. Address before: 201203, room 2, building 690, No. 302 blue wave road, Shanghai, Pudong New Area Applicant before: RDA Microelectronics (Shanghai) Corp. Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |