CN108923752A - A kind of broadband fully differential noise cancellation low-noise amplifier - Google Patents

A kind of broadband fully differential noise cancellation low-noise amplifier Download PDF

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Publication number
CN108923752A
CN108923752A CN201810648758.4A CN201810648758A CN108923752A CN 108923752 A CN108923752 A CN 108923752A CN 201810648758 A CN201810648758 A CN 201810648758A CN 108923752 A CN108923752 A CN 108923752A
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China
Prior art keywords
bipolar junction
junction transistor
resistance
fully differential
resistor
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CN201810648758.4A
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Chinese (zh)
Inventor
樊祥宁
陶健
陈鑫
王志功
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Southeast University
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Southeast University
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Priority to CN201810648758.4A priority Critical patent/CN108923752A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a kind of broadband fully differential noise cancellation low-noise amplifiers, including：Fully differential is total to grid grade branch and fully differential noise cancellation branch；It includes the first bipolar junction transistor Q1, the second bipolar junction transistor Q2, first resistor R that fully differential, which is total to grid grade branch,L1, second resistance RL2, 3rd resistor RL3, the 4th resistance RL4, the 5th resistance RE1With the 6th resistance RE2, fully differential noise cancellation branch includes third bipolar junction transistor Q3, the 4th bipolar junction transistor Q4, the 5th bipolar junction transistor Q5 and the 6th bipolar junction transistor Q6.Total grid grade input of the invention can provide 50 ohm of broadband with outer matching, thus eliminate the outer matching network of piece；The noise cancellation branch an of fully differential has been used simultaneously, so that noise optimization breaches the tradeoff that traditional fully differential is total to grid grade amplifier, and because of its fully differential structure, so that the noise cancellation not influence vulnerable to technique change and load.

Description

A kind of broadband fully differential noise cancellation low-noise amplifier
Technical field
The present invention relates to low-noise amplifier field, especially a kind of broadband fully differential noise cancellation low-noise amplifier.
Background technique
As multimode multi-standard communication carrier frequency range is continuously increased, the demand for development receiver of wireless communication technique can be simultaneous Hold communication mode as much as possible and standard.Low-noise amplifier is the first order active circuit of receiver, and itself should have There is very low noise and provides enough gains to inhibit the noise of late-class circuit.Due to the signal carrier frequency of distinct communication standards Rate range is very wide, this needs low-noise amplifier to realize input resistant matching and low-noise factor in very wide frequency range.
The input that broadband may be implemented in traditional broadband common base low-noise amplifier matches and wider output bandwidth, but It is that matched limitation is inputted due to it, the mutual conductance of common base low-noise amplifier is a fixed value, therefore the structure is unfavorable for The optimization of noise coefficient.And current low-noise amplifier noise cancellation technique is that useful signal is simultaneously amplified using two-way, Output end useful signal is superimposed, and wherein noise all the way is cancelled, to realize the purpose of high-gain low-noise.But The two asymmetric-branches, therefore influence of the circuit vulnerable to technique change and load, so that two-way gain is uneven, noise cancellation Effect is had a greatly reduced quality.
Summary of the invention
Technical problem to be solved by the present invention lies in, a kind of broadband fully differential noise cancellation low-noise amplifier is provided, Enable to influence of the noise cancellation not vulnerable to technique change and load.
In order to solve the above technical problems, the present invention provides a kind of broadband fully differential noise cancellation low-noise amplifier, including： Fully differential is total to grid grade branch and fully differential noise cancellation branch；Fully differential be total to grid grade branch include the first bipolar junction transistor Q1, Second bipolar junction transistor Q2, first resistor RL1, second resistance RL2, 3rd resistor RL3, the 4th resistance RL4, the 5th resistance RE1With 6th resistance RE2, fully differential noise cancellation branch includes third bipolar junction transistor Q3, the 4th bipolar junction transistor Q4, the 5th couple Bipolar transistor Q5 and the 6th bipolar junction transistor Q6；First resistor RL1A termination power VDD, another termination is the 6th ambipolar Transistor Q6Collector and 3rd resistor RL3One end, 3rd resistor RL3Another termination export Voutp；First is ambipolar Transistor Q1Collector meet Voutp, the first bipolar junction transistor Q1Base stage meet bias voltage Vb1, the first bipolar junction transistor Q1 Emitter connect input Vinp；5th resistance RE1One termination Vinp, other end ground connection；Third bipolar junction transistor Q3Collector Meet the 5th bipolar junction transistor Q5Emitter, third bipolar junction transistor Q3Base stage meet Vinp, third bipolar junction transistor Q3 Emitter ground connection；5th bipolar junction transistor Q5Base stage meet bias voltage Vb2, the 5th bipolar junction transistor Q5Collector Meet second resistance RL2With the 4th resistance RL4One end；Second resistance RL2A termination power VDD, the 5th ambipolar crystalline substance of another termination Body pipe Q5Collector and the 4th resistance RL4One end, the 4th resistance RL4Another termination export Voutn；Second ambipolar crystalline substance Body pipe Q2Collector meet Voutn, the second bipolar junction transistor Q2Base stage meet bias voltage Vb1, the second bipolar junction transistor Q2's Emitter meets input Vinn；6th resistance RE2One termination Vinn, other end ground connection；4th bipolar junction transistor Q4Collector connect 6th bipolar junction transistor Q6Emitter, the 4th bipolar junction transistor Q4Base stage meet Vinn, the 4th bipolar junction transistor Q4's Emitter ground connection；6th bipolar junction transistor Q6Base stage meet bias voltage Vb2, the 6th bipolar junction transistor Q6Collector connect First resistor RL1With 3rd resistor RL3One end.
Preferably, the size of the first bipolar junction transistor Q1 and the second bipolar junction transistor Q2 are identical, and third is bipolar The size of transistor npn npn Q3 and the 4th bipolar junction transistor Q4 are identical, the 5th bipolar junction transistor Q5 and the 6th ambipolar crystalline substance The size of body pipe Q6 is identical.
Preferably, first resistor RL1With second resistance RL2Size it is identical, 3rd resistor RL3With the 4th resistance RL4's Size is identical, the 5th resistance RE1With the 6th resistance RE2Resistance value it is identical.
Preferably, amplifier common gate input provide 50 ohm of broadband with outer matching.
Beneficial effects of the present invention are：Total grid grade input of the invention can provide 50 ohm of broadband with outer matching, Thus eliminate the outer matching network of piece；The noise cancellation branch an of fully differential has been used simultaneously, so that noise optimization is broken through Traditional fully differential is total to the tradeoff of grid grade amplifier, and because of its fully differential structure, so that noise cancellation is not vulnerable to work The influence of skill variation and load.
Detailed description of the invention
Fig. 1 is amplifier circuit configuration schematic diagram of the invention.
Fig. 2 is simulation result of the present invention compared with traditional fully differential common gate low noise amplifier carries out noise coefficient Schematic diagram.
Specific embodiment
As shown in Figure 1, a kind of broadband fully differential noise cancellation low-noise amplifier, including：Fully differential be total to grid grade branch and Fully differential noise cancellation branch；Fully differential be total to grid grade branch include the first bipolar junction transistor Q1, the second bipolar junction transistor Q2, First resistor RL1, second resistance RL2, 3rd resistor RL3, the 4th resistance RL4, the 5th resistance RE1With the 6th resistance RE2, fully differential makes an uproar It includes third bipolar junction transistor Q3, the 4th bipolar junction transistor Q4, the 5th bipolar junction transistor Q5 and the 6th that sound, which offsets branch, Bipolar junction transistor Q6；First resistor RL1A termination power VDD, the 6th bipolar junction transistor Q of another termination6Collector with And 3rd resistor RL3One end, 3rd resistor RL3Another termination export Voutp；First bipolar junction transistor Q1Collector connect Voutp, the first bipolar junction transistor Q1Base stage meet bias voltage Vb1, the first bipolar junction transistor Q1Emitter connect input Vinp； 5th resistance RE1One termination Vinp, other end ground connection；Third bipolar junction transistor Q3Collector connect the 5th bipolar junction transistor Q5Emitter, third bipolar junction transistor Q3Base stage meet Vinp, third bipolar junction transistor Q3Emitter ground connection；5th pair Bipolar transistor Q5Base stage meet bias voltage Vb2, the 5th bipolar junction transistor Q5Collector meet second resistance RL2With the 4th electricity Hinder RL4One end；Second resistance RL2A termination power VDD, the 5th bipolar junction transistor Q of another termination5Collector and Four resistance RL4One end, the 4th resistance RL4Another termination export Voutn；Second bipolar junction transistor Q2Collector meet Voutn, Second bipolar junction transistor Q2Base stage meet bias voltage Vb1, the second bipolar junction transistor Q2Emitter connect input Vinn；6th Resistance RE2One termination Vinn, other end ground connection；4th bipolar junction transistor Q4Collector meet the 6th bipolar junction transistor Q6's Emitter, the 4th bipolar junction transistor Q4Base stage meet Vinn, the 4th bipolar junction transistor Q4Emitter ground connection；6th is ambipolar Transistor Q6Base stage meet bias voltage Vb2, the 6th bipolar junction transistor Q6Collector meet first resistor RL1With 3rd resistor RL3 One end.
Altogether the input of grid grade can provide 50 ohm of broadband with outer matching, thus eliminate the outer matching network of piece.It is right It is total to grid grade branch in fully differential, input differential signal enters the first bipolar junction transistor Q1With the second bipolar junction transistor Q2Transmitting By the first bipolar junction transistor Q after pole1With the second bipolar junction transistor Q2In V after amplifying with phaseoutpAnd VoutnOutput, at this time First bipolar junction transistor Q1Load be RL1+RL2, the second bipolar junction transistor Q2Load be RL2+RL4.5th resistance RE1With 5th resistance RE2For direct current biasing resistance.And for noise cancellation branch, the third bipolar transistor of input differential signal entrance Pipe Q3With the 4th bipolar junction transistor Q4By third bipolar junction transistor Q after base stage3With the 4th bipolar junction transistor Q4Reverse phase is put After big and reversely in VoutnAnd VoutpOutput, realizes the superposition of two paths of signals, wherein the 5th bipolar junction transistor Q5With the 6th pair Bipolar transistor Q6For cascade transistor, plays and reduce third bipolar junction transistor Q3With the 4th bipolar junction transistor Q4Miller effect It answers, increases the effect of isolation.First resistor R at this timeL1With second resistance RL2For the load resistance of noise cancellation branch.
For the first bipolar junction transistor Q1With the second bipolar junction transistor Q2Noise, can be equivalent to and be connected in parallel on its collection A noise current source between electrode and emitter, the first noise current pass through the first bipolar junction transistor Q1With second pair Bipolar transistor Q2Collector flow through load RL1+RL3And RL2+RL4It can be exported in the form of noise voltage in output end, simultaneously The noise current passes through the first bipolar junction transistor Q1With the second bipolar junction transistor Q2Emitter outside piece input impedance RSOn Form a noise voltage, RSFor the internal resistance of antenna or test equipment, size is 50 ohm.It can see the first ambipolar crystalline substance Body pipe Q1With the second bipolar junction transistor Q2Noise current in RL1+RL3And RL2+RL4The noise voltage of upper formation in input terminal The noise voltage polarity of upper formation is opposite.At this moment the noise voltage formed on input terminal is amplified to output by noise cancellation branch Grade, with original first bipolar junction transistor Q1With the second bipolar junction transistor Q2Noise current in RL1+RL3And RL2+RL4On The noise voltage of formation is offseted in output stage.Work as gm3/gm1=(RL1+RL3)/RL1When, the first bipolar junction transistor may be implemented Q1With the second bipolar junction transistor Q2Noise be cancelled completely.Wherein gm1For the first bipolar junction transistor Q1Or second is ambipolar Transistor Q2Mutual conductance, gm3For third bipolar junction transistor Q3Or the 4th bipolar junction transistor Q4Mutual conductance.
It is emulated using Cadence Virtuoso software, the comparison present invention is total to grid low noise with traditional fully differential and puts The noise coefficient of big device.Simulation result is as shown in Fig. 2, abscissa indicates the frequency of input radio frequency signal, unit Hz, ordinate Indicate noise coefficient, unit dB.It can see of the invention in the input frequency range of 0.1GHz to 3GHz, noise coefficient 2.5dB or more is at least optimized compared with traditional fully differential common-gate low noise amplifier.Fully differential output can be provided again simultaneously, made Obtain the noise cancellation not influence vulnerable to technique change and load.

Claims (4)

1. a kind of broadband fully differential noise cancellation low-noise amplifier, which is characterized in that including：Fully differential is total to grid grade branch and complete Differential noise offsets branch；It includes the first bipolar junction transistor Q1, the second bipolar junction transistor Q2, that fully differential, which is total to grid grade branch, One resistance RL1, second resistance RL2, 3rd resistor RL3, the 4th resistance RL4, the 5th resistance RE1With the 6th resistance RE2, fully differential noise Offsetting branch includes third bipolar junction transistor Q3, the 4th bipolar junction transistor Q4, the 5th bipolar junction transistor Q5 and the 6th couple Bipolar transistor Q6；First resistor RL1A termination power VDD, the 6th bipolar junction transistor Q of another termination6Collector and 3rd resistor RL3One end, 3rd resistor RL3Another termination export Voutp；First bipolar junction transistor Q1Collector connect Voutp, the first bipolar junction transistor Q1Base stage meet bias voltage Vb1, the first bipolar junction transistor Q1Emitter connect input Vinp； 5th resistance RE1One termination Vinp, other end ground connection；Third bipolar junction transistor Q3Collector connect the 5th bipolar junction transistor Q5Emitter, third bipolar junction transistor Q3Base stage meet Vinp, third bipolar junction transistor Q3Emitter ground connection；5th pair Bipolar transistor Q5Base stage meet bias voltage Vb2, the 5th bipolar junction transistor Q5Collector meet second resistance RL2With the 4th electricity Hinder RL4One end；Second resistance RL2A termination power VDD, the 5th bipolar junction transistor Q of another termination5Collector and Four resistance RL4One end, the 4th resistance RL4Another termination export Voutn；Second bipolar junction transistor Q2Collector meet Voutn, Second bipolar junction transistor Q2Base stage meet bias voltage Vb1, the second bipolar junction transistor Q2Emitter connect input Vinn；6th Resistance RE2One termination Vinn, other end ground connection；4th bipolar junction transistor Q4Collector meet the 6th bipolar junction transistor Q6's Emitter, the 4th bipolar junction transistor Q4Base stage meet Vinn, the 4th bipolar junction transistor Q4Emitter ground connection；6th is ambipolar Transistor Q6Base stage meet bias voltage Vb2, the 6th bipolar junction transistor Q6Collector meet first resistor RL1With 3rd resistor RL3 One end.
2. fully differential noise cancellation low-noise amplifier in broadband as described in claim 1, which is characterized in that the first ambipolar crystalline substance The size of body pipe Q1 and the second bipolar junction transistor Q2 are identical, third bipolar junction transistor Q3 and the 4th bipolar junction transistor The size of Q4 is identical, and the size of the 5th bipolar junction transistor Q5 and the 6th bipolar junction transistor Q6 are identical.
3. fully differential noise cancellation low-noise amplifier in broadband as described in claim 1, which is characterized in that first resistor RL1With Second resistance RL2Size it is identical, 3rd resistor RL3With the 4th resistance RL4Size it is identical, the 5th resistance RE1With Six resistance RE2Resistance value it is identical.
4. fully differential noise cancellation low-noise amplifier in broadband as described in claim 1, which is characterized in that the total grid of amplifier Pole input provide 50 ohm of broadband with outer matching.
CN201810648758.4A 2018-06-22 2018-06-22 A kind of broadband fully differential noise cancellation low-noise amplifier Pending CN108923752A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109474243A (en) * 2018-11-30 2019-03-15 南京米乐为微电子科技有限公司 A kind of ultra-wideband low-noise amplifier
CN109802638A (en) * 2018-12-19 2019-05-24 北京航空航天大学青岛研究院 The low-noise amplifier and its method offset based on global noise
CN114285385A (en) * 2022-02-21 2022-04-05 成都芯翼科技有限公司 Offset circuit of operational amplifier input current

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CN105720929A (en) * 2016-01-22 2016-06-29 西安电子科技大学 Wide and high-frequency and low-noise amplifier with self-bias band gap
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CN105991093A (en) * 2015-02-11 2016-10-05 苏州啸虎电子科技有限公司 Low noise amplifier having difference structure and pole elimination structure
CN105720929A (en) * 2016-01-22 2016-06-29 西安电子科技大学 Wide and high-frequency and low-noise amplifier with self-bias band gap
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109474243A (en) * 2018-11-30 2019-03-15 南京米乐为微电子科技有限公司 A kind of ultra-wideband low-noise amplifier
CN109802638A (en) * 2018-12-19 2019-05-24 北京航空航天大学青岛研究院 The low-noise amplifier and its method offset based on global noise
CN109802638B (en) * 2018-12-19 2023-09-15 北京航空航天大学青岛研究院 Low noise amplifier based on global noise cancellation and method thereof
CN114285385A (en) * 2022-02-21 2022-04-05 成都芯翼科技有限公司 Offset circuit of operational amplifier input current

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Application publication date: 20181130