CN103532517A - Novel adjustable active inductor with great inductance and high Q value - Google Patents
Novel adjustable active inductor with great inductance and high Q value Download PDFInfo
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- CN103532517A CN103532517A CN201310503445.7A CN201310503445A CN103532517A CN 103532517 A CN103532517 A CN 103532517A CN 201310503445 A CN201310503445 A CN 201310503445A CN 103532517 A CN103532517 A CN 103532517A
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Abstract
The invention provides a novel adjustable active inductor with great inductance and a high Q value, and relates to a radio frequency integrated circuit technology. The novel adjustable active inductor solves the problems that the existing active inductor has the disadvantages of lower equivalent inductance and Q value and smaller bandwidth. The inductor comprises an input/output end, a Cascode structure, a bias current source, an active resistance feedback and a shunt branch, wherein the active resistance feedback comprises a passive resistor and a second NMOS (N-channel Metal Oxide Semiconductor) tube which are connected in parallel; in addition, the two ends of the active resistance feedback are connected with a base of a second transistor and a collector of a third transistor respectively; the shunt branch comprises a first NMOS tube; and a drain of the first NMOS tube is connected with an emitter of the third transistor. According to the active inductor, the great inductance and the high Q value of the active inductor as well as tunability of the inductance and the Q value are realized by adjusting voltage of the NMOS tubes in the active resistance feedback and the shunt branch.
Description
Technical field
The present invention relates to technical field of radio frequency integrated circuits, particularly relate to a kind of novel adjustable active inductance with large inductance value, high Q value.
Background technology
Each radio-frequency module (filter, low noise amplifier, power amplifier, frequency mixer, the voltage controlled oscillator etc.) important role of inductance in transceiver, as functions such as impedance transformation, feedback, tuning, filtering.
Many inductance of applying in these integrated circuit modules are at present passive spiral inductance, but it has the shortcomings such as chip occupying area is large, quality factor q is low, inductance value is untunable.Along with integrated circuit is more and more to high speed, miniature, adjustable, portability future development, these shortcomings are more obvious.In order to solve these shortcomings of passive spiral inductance, people have proposed a kind of equivalent inductance circuit (active inductance) that utilizes active device to form and have substituted passive inductance.
Active inductance, owing to being to adopt active device to form, so its area that takies chip greatly reduces, only has one tens to several percent of passive spiral inductance.By regulating the biasing of active inductance circuit, can regulate forming the mutual conductance of the trsanscondutance amplifier of active inductance, realize the adjusting to equivalent inductance value and Q value.This tunability of active inductance, can compensate variation because of technique, bias voltage and temperature (PVT) impact on integrated circuit effectively.But traditional active inductance has equivalent inductance value and Q value is lower, and the narrower shortcoming of bandwidth.
Therefore, instantly need the urgent technical problem solving to be exactly: a kind of effective measures of proposition how can innovate, to meet the demand of practical application.
Summary of the invention
For the weak point existing in the problems referred to above, the invention provides a kind of novel adjustable active inductance with large inductance value, high Q value, make it there is large inductance value, high Q value and the characteristic to the tunability of inductance value and Q value.
In order to address the above problem, the invention provides a kind of large inductance value that has, the novel adjustable active inductance of high Q value, comprise input/output terminal, Cascode structure and bias current sources, described Cascode structure comprises the first transistor that common emitter connects, the transistor seconds that the 3rd transistor that common base connects is connected with common collector, wherein, also comprise active resistance feedback and diverter branch, described active pull-up feedback comprises passive resistance and the parallel connection of the 2nd NMOS pipe, and described active pull-up feedback two ends are connected with described the 3rd transistorized collector electrode with the base stage of described transistor seconds respectively, described diverter branch comprises a NMOS pipe, and the drain electrode of a described NMOS pipe is connected with the 3rd transistorized emitter.
Preferably, described bias current sources comprises the first current source and the second current source, and described the first current source comprises a PMOS pipe, and the 3rd transistor that the first transistor connecting for described common emitter is connected with described common base provides bias current; Described the second current source comprises the 3rd NMOS pipe, and the transistor seconds connecting for described common collector provides bias current.
Preferably, regulate the grid voltage of described PMOS pipe and described the 3rd NMOS pipe to regulate the size of equivalent current source electric current, the adjusting of realization to equivalent inductance value and Q value.
Preferably, described the 2nd NMOS pipe is operated in triode region, regulates the grid voltage of the 2nd NMOS pipe, and then obtains the equivalent resistance of variation, realizes the adjusting to equivalent inductance value and Q value.
Preferably, regulate the grid voltage of a described NMOS pipe, control the size of described diverter branch electric current, and by change the 3rd transistorized electric current that the first transistor that described common emitter connects is connected with described common base of flowing through, the adjusting of realization to equivalent inductance value.
Compared with prior art, the present invention has the following advantages:
The present invention be take Cascode structure as basic circuit framework, active pull-up feedback and diverter branch have been introduced, by the adjusting of the NMOS tube voltage in active pull-up feedback and diverter branch, realized active inductance simultaneously and there is large inductance value, high Q value and the tunability to inductance value and Q value.
Below with reference to drawings and Examples, the present invention is described in further detail, this embodiment is only for explaining the present invention.Protection scope of the present invention is not construed as limiting.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is circuit diagram of the present invention;
Fig. 3 is small signal circuit figure of the present invention;
Fig. 4 is equivalent circuit diagram of the present invention;
Fig. 5 equivalent inductance value that is the present invention under biasing 1 condition is with the graph of a relation of frequency change;
Fig. 6 Q value that is the present invention under biasing 1 condition is with the graph of a relation of frequency change;
Fig. 7 equivalent inductance value that is the present invention under biasing 2 conditions is with the graph of a relation of frequency change;
Fig. 8 Q value that is the present invention under biasing 2 conditions is with the graph of a relation of frequency change.
Main element symbol description:
1-input/output terminal 2-bias current sources 3-active pull-up feedback
4-Cascode structure 5-diverter branch 201-passive resistance
202-the 2nd NMOS pipe 203-grid voltage 211-the one NMOS pipe
212-grid voltage 221-the first transistor 222-transistor seconds
223-the 3rd transistor 231-PMOS pipe 232-the 3rd NMOS pipe
241-first current source 242-the second current source
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and example, the present invention is described in further detail.But example is not as a limitation of the invention.
As depicted in figs. 1 and 2, embodiments of the invention comprise input/output terminal 1, Cascode structure 4 and bias current sources 2, Cascode structure 4 comprises the first transistor 221 of common emitter connection, the transistor seconds 222 that the 3rd transistor 223 of common base connection is connected with common collector, wherein, also comprise active resistance feedback 3 and diverter branch 5, active pull-up feedback 3 comprises that passive resistance 201 and the 2nd NMOS manage 202 parallel connections, and active pull-up feeds back 3 two ends and is connected with the collector electrode of the 3rd transistor 223 with the base stage of transistor seconds 222 respectively; Diverter branch 5 comprises a NMOS pipe 211, and the drain electrode of NMOS pipe 211 is connected with the emitter of the 3rd transistor 223.
The present invention adopts the active pull-up of innovation to feed back 3 structures, active pull-up feedback 3 comprises that passive resistance 201 and the 2nd NMOS manage 202 parallel connections, by regulating the grid voltage 203 of the 2nd NMOS pipe 202 to make it be operated in triode region, thereby obtain the variable resistor with grid voltage 203 variations.
The small signal circuit figure of active inductance of the present invention and equivalent circuit diagram are as shown in Figure 3 and Figure 4.Active pull-up feedback 3 can form an extra induction reactance in loop, thereby effectively increases the equivalent inductance value of active inductance.Along with the increase of equivalent inductance value, Q value also increases thereupon.Active pull-up feedback 3 has been introduced respectively one and has been greater than 1 item (1+R in the molecule of equivalent inductance 302 and series resistance 303 expression formulas
fg3m), equivalent inductance 302 increases with the increase of active pull-up feedback 3, series resistance 303 reduces with the increase of active pull-up feedback 3, the increase that reduces to be all conducive to Q value of the increase of equivalent inductance 302 and series resistance 303, the size that the grid voltage 203 that forms the 2nd NMOS pipe 202 of active pull-up feedback 3 by adjusting changes active pull-ups feedback 3 realizes the tunable of inductance value and Q value.
Diverter branch 5 of the present invention comprises a NMOS pipe 211.By regulating the grid voltage 212 of a NMOS pipe 211 to control the size of branch roads shunting, change the electric current of the first transistor 221 of flowing through, thereby regulate the mutual conductance of the first transistor 221, and then realize tuning to equivalent inductance value.The introducing of diverter branch 5 has been introduced R in the molecule of the expression formula of equivalent inductance 302
o, along with a NMOS manages the increase R of 211 grid voltages
oreduce, thereby be conducive to the increase of equivalent inductance value, realize large inductance value.
In addition we can also, by regulating the grid voltage of PMOS pipe the 231 and the 3rd NMOS pipe 232 to change size of current adjusting to transistor transconductance with realization of equivalent current source, finally realize the adjusting to equivalent inductance value and Q value.
As shown in Figure 3 and Figure 4, be small signal circuit figure and the equivalent circuit diagram of circuit of the present invention, its each equivalent parameters expression formula is as follows:
C
P=C
π1
Based on the above analysis to circuit, the embodiment of the present invention be take SiGe BiCMOS as example, and the present invention is designed and verified.We can be by regulating bias voltage to obtain different inductance performances.
As shown in Figure 5 and Figure 6, at biasing 1(V
1=4.648V, V
2=2.7875V, V
turn=0.695V, V
r=1.975V) under condition, the resonance frequency of active inductance is 7.7GHz, and in 0～7.7GHz frequency range, equivalent inductance value excursion is 5.67～43nH.Q value is greater than 20 within the scope of 4.5～6.7GHz, and reaches maximum 2757 when 5.7GHz.
As shown in Figure 7 and Figure 8, at biasing 2(V
1=4.32V, V
2=2.96V, V
turn=1.043V, V
r=1.34V) under condition, the resonance frequency of active inductance is 5.7GHz, and in 0～5.7GHz frequency range, equivalent inductance value excursion is 7.81～46.87nH.Q value is greater than 20 within the scope of 3～4.9GHz, and reaches maximum 1246 when 4.1GHz.
Under different bias conditions, the different qualities that active inductance shows, has fully demonstrated the tunability of active inductance equivalent inductance value and Q value and resonance frequency, has realized the large inductance value of the present invention's proposition, the designing requirement of high Q value simultaneously.
In addition,, because the element of circuit of the present invention is substantially all active device, so compare with passive spiral inductance, chip occupying area greatly reduces.
Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. a novel adjustable active inductance with large inductance value, high Q value, comprise the Cascode structure that transistor seconds that the 3rd transistor that input/output terminal, bias current sources and the first transistor being connected by common emitter, common base connect is connected with common collector forms, it is characterized in that, also comprise active resistance feedback and diverter branch, described active pull-up feedback comprises passive resistance in parallel and the 2nd NMOS pipe, and described active pull-up feedback two ends are connected with described the 3rd transistorized collector electrode with the base stage of described transistor seconds respectively; Described diverter branch comprises a NMOS pipe, and the drain electrode of a described NMOS pipe is connected with the 3rd transistorized emitter.
2. the novel adjustable active inductance with large inductance value, high Q value as claimed in claim 1, it is characterized in that, described bias current sources comprises the first current source and the second current source, described the first current source comprises a PMOS pipe, and the 3rd transistor that the first transistor connecting for described common emitter is connected with described common base provides bias current; Described the second current source comprises the 3rd NMOS pipe, and the transistor seconds connecting for described common collector provides bias current.
3. the novel adjustable active inductance with large inductance value, high Q value as claimed in claim 2, it is characterized in that, regulate the grid voltage of described PMOS pipe and described the 3rd NMOS pipe to regulate the size of equivalent current source electric current, the adjusting of realization to equivalent inductance value and Q value.
4. the novel adjustable active inductance with large inductance value, high Q value as claimed in claim 3, is characterized in that, described the 2nd NMOS pipe is operated in triode region.
5. the novel adjustable active inductance with large inductance value, high Q value as claimed in claim 4, it is characterized in that, regulate the grid voltage of a described NMOS pipe, control the size of described diverter branch electric current, and by change the 3rd transistorized electric current that the first transistor that described cascode level connects is connected with described common base of flowing through, the adjusting of realization to equivalent inductance value.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956986A (en) * | 2014-05-05 | 2014-07-30 | 北京工业大学 | Differential active inductor with tunable high Q value |
| CN104953984A (en) * | 2015-06-25 | 2015-09-30 | 北京工业大学 | Linearized transistor combined inductor |
| CN105207664A (en) * | 2015-09-12 | 2015-12-30 | 北京工业大学 | Large-inductance-value and high-Q-value adjustable active inductor composed of three negative transconductance amplifiers |
| CN108768342A (en) * | 2018-05-31 | 2018-11-06 | 北京工业大学 | A kind of integrated active inductance of radio frequency |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050206442A1 (en) * | 2002-09-19 | 2005-09-22 | Nec Compound Semiconductor Devices, Ltd. | Constant current circuit and active filter circuit using the same |
| CN101958689A (en) * | 2009-01-23 | 2011-01-26 | 索尼公司 | Biasing circuit and contain its transconductance capacitor filter circuit and semiconductor integrated circuit |
-
2013
- 2013-10-23 CN CN201310503445.7A patent/CN103532517A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050206442A1 (en) * | 2002-09-19 | 2005-09-22 | Nec Compound Semiconductor Devices, Ltd. | Constant current circuit and active filter circuit using the same |
| CN101958689A (en) * | 2009-01-23 | 2011-01-26 | 索尼公司 | Biasing circuit and contain its transconductance capacitor filter circuit and semiconductor integrated circuit |
Non-Patent Citations (1)
| Title |
|---|
| 高栋等: "一款应用于多频带的基于新型Cascode有源电感的高Q带通滤波器", 《电子器件》, vol. 36, no. 5, 20 October 2013 (2013-10-20), pages 667 - 671 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956986A (en) * | 2014-05-05 | 2014-07-30 | 北京工业大学 | Differential active inductor with tunable high Q value |
| CN103956986B (en) * | 2014-05-05 | 2017-02-15 | 北京工业大学 | Differential active inductor with tunable high Q value |
| CN104953984A (en) * | 2015-06-25 | 2015-09-30 | 北京工业大学 | Linearized transistor combined inductor |
| CN104953984B (en) * | 2015-06-25 | 2017-11-03 | 北京工业大学 | The transistor combination inductance of linearisation |
| CN105207664A (en) * | 2015-09-12 | 2015-12-30 | 北京工业大学 | Large-inductance-value and high-Q-value adjustable active inductor composed of three negative transconductance amplifiers |
| CN105207664B (en) * | 2015-09-12 | 2017-12-01 | 北京工业大学 | Big inductance value, the high q-factor of three negative transconductance amplifiers compositions can adjust active inductance |
| CN108768342A (en) * | 2018-05-31 | 2018-11-06 | 北京工业大学 | A kind of integrated active inductance of radio frequency |
| CN108768342B (en) * | 2018-05-31 | 2021-09-03 | 北京工业大学 | Radio frequency integrated active inductor |
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Application publication date: 20140122 |