CN205545159U - W - wave band high performance low -noise amplifier - Google Patents
W - wave band high performance low -noise amplifier Download PDFInfo
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- CN205545159U CN205545159U CN201620348457.6U CN201620348457U CN205545159U CN 205545159 U CN205545159 U CN 205545159U CN 201620348457 U CN201620348457 U CN 201620348457U CN 205545159 U CN205545159 U CN 205545159U
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Abstract
The utility model discloses a W wave band high performance low -noise amplifier, including the chip, the chip is 4 grades of amplifier chips for signal reception is equipped with input stage circuit, output stage circuit, drain terminal bias circuit, bars end bias circuit, first order intermediate circuit, second level intermediate circuit, third level intermediate circuit, fourth stage intermediate circuit, source end feedback on the chip, constitute signal channel. The utility model discloses a special biasing network, when accomplishing impedance match, it provides the direct current and prevents high frequency self excitation function to take into account, the whole signal channel of this chip does not adopt the lumped element to match, only accomplishes through the width of adjustment microstrip line and matches, this chip uses microstrip line connection source and holds the ground hole to adjust noise and gain, this chip passes through design optimization, and the gold wire of supporting big inductance is as the bonding line, the chip has the through -hole to connect tow sides, guarantee the chip back and systematically between keep good radio frequency ground joint.
Description
Technical field
This utility model chip relates to wireless communication technology field, particularly relates to the low-noise amplifier of a kind of W-wave band.
Background technology
According to frequency partition, millimeter wave is generally referred to as the wavelength electromagnetic wave between 1mm～10mm, wherein W-wave band is the important window frequency in millimeter wave, W-wave band is higher due to frequency, wavelength is shorter, under the antenna of same bore, short narrow beam, the Sidelobe of realizing of wavelength, thus it is provided that high precision and good resolving power.Along with the development of radio communication, W-band system is widely used, such as automobile collision avoidance radar, test radar, precise guidance etc..Putting before this, people propose the highest requirement for the radio-frequency transmitter of the wireless system of W-wave band, such as low-power consumption, low noise, high sensitivity and high-performance etc..
Low-noise amplifier (LNA, Low Noise Amplifier) is used as high frequency or the intermediate-frequency preamplifier of all kinds of radio receiver, and the amplifying circuit of high sensitivity electron detection equipment, is improved the sensitivity of receiver by low-noise amplifier.Therefore, it is in W-microwave radio receiver system low-noise amplifier foremost, serves critical effect for improving systematic function.
Utility model content
For solving above-mentioned technical problem, this utility model provides a kind of can keep, at W-wave band, the low-noise amplifier that high-performance is stable in order to meeting.
The technical solution adopted in the utility model is: a kind of W-wave band high performance low noise amplifier, including chip, described chip is 4 grades of amplifier chips, receive for signal, its a size of 3000 × 2000 × 100 μm, chip is provided with input stage circuit, output-stage circuit, drain terminal biasing circuit, grid end biasing circuit, first order intermediate circuit, second level intermediate circuit, third level intermediate circuit, fourth stage intermediate circuit, source feedback, constitutes signal path；Drain terminal biasing circuit, grid end biasing circuit connect input stage circuit respectively, and input stage circuit connects intermediate circuit, reconnect output-stage circuit；Source feedback has multiple, connects intermediate circuit at different levels respectively.
The biasing of described drain terminal includes the first electric capacity, the second electric capacity, the 3rd electric capacity, the first resistance, the second resistance, the 4th electric capacity, the 5th electric capacity, the 3rd resistance and the 4th resistance；4th electric capacity and the 5th electric capacity are high frequency decoupling capacitor；The grid end biasing of described chip includes the 6th electric capacity, the 7th electric capacity, the 8th electric capacity and the 9th electric capacity, 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance, the tenth resistance, the 11st resistance, 8th electric capacity and the 9th electric capacity are high frequency decoupling capacitor, suppression high-frequency gain, complete the matching feature of circuit, and provide unidirectional current for tube core drain terminal.
Without lamped elements such as capacitance resistances on the signal path of described chip, intermediate circuits at different levels use the microstrip line without the different live widths at turning to complete coupling.
The source feedback of described chip is provided with microstrip line, uses microstrip line to replace traditional resistance, and the regulation completing noise and gain completes the source connection to ground simultaneously.
Described chip is provided with conical through-hole, and this front, aperture is 80um, and aperture, the back side is 150um, connects tow sides by through hole, with ensure systematically with the good connection of radio circuit.
Of the present utility model being beneficial in that, this chip uses special biasing networks, while completing impedance matching, takes into account offer unidirectional current and prevents high-frequency self-excitation function；The whole signal path of this chip, does not use lamped element to mate, and only completes coupling by the width of adjustment microstrip line；This chip use microstrip line connection source is to hole, ground, to regulate noise and gain；This chip passes through design optimization, supports that the spun gold of big inductance is as bonding line；Chip has through hole to connect tow sides, it is ensured that chip back and systematically between keep good radio frequency grounding connection.
Accompanying drawing explanation
Fig. 1 is the drain terminal bias structure schematic diagram of chip；
Fig. 2 is the grid end bias structure schematic diagram of chip；
Fig. 3 is the signal path structural representation of chip；
Fig. 4 is the source feedback arrangement schematic diagram of chip；
Fig. 5 is the through-hole structure schematic diagram top view of chip；
Fig. 6 is the through-hole structure schematic diagram front view of chip.
Detailed description of the invention
Below in conjunction with the accompanying drawings and be embodied as this utility model is described in further detail:
As it is shown in figure 1, the drain terminal biasing schematic diagram that in this chip, tube core uses, including 5 electric capacity, 4 resistance and one section of microstrip line；Wherein the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3 are used for filtering the signal of relatively low frequency with the first resistance R1 connected, the second resistance R2, ensure the input that DC voltage can be stable simultaneously, are not disturbed by radio circuit；The self-excitation that 4th electric capacity C4 and the 5th electric capacity C5 can emulate high frequency as decoupling capacitor occurs；3rd resistance R3 and the 4th R4 can provide pressure drop, voltage is down to the voltage of design requirement, to reach the purpose of low-power consumption；Microstrip line can substitute for shunt inductance, completes the function of impedance matching.
As in figure 2 it is shown, include 4 electric capacity, 7 resistance and one section of microstrip line；Wherein the 5th resistance R5, the 6th resistance R6 of the 6th electric capacity C6, the 7th electric capacity C7 and series connection is used for filtering the signal of relatively low frequency, ensures the input that DC voltage can be stable simultaneously, is not disturbed by radio circuit；The self-excitation that 8th electric capacity C8 and the 9th electric capacity C9 can emulate high frequency as decoupling capacitor occurs；7th resistance R7, the 8th resistance R8 and the 9th resistance R9 can ensure that grid is stable, control electric current and prevent scaling loss tube core；Tenth resistance R10 and the 11st resistance R11 can provide pressure drop, voltage is down to the voltage of design requirement, to reach the purpose of low-power consumption；Microstrip line can substitute for shunt inductance, completes the function of impedance matching.
As it is shown on figure 3, when chip normally works, signal is transmitted from input to outfan.The whole path of this chip does not has any lumped elements, this ensure that the stability of technique.Simultaneously in addition to biasing, it is to be completed by a path, decreases unnecessary loss.It addition, for the impedance matching ensureing circuit, use the mode of regulation diverse location live width here, complete coupling.
As shown in Figure 4, for low-noise amplifier, the problem that optimum gain impedance point is different with minimal noise impedance point, the form of source class feedback is used to be adjusted here.It is simultaneously based on the characteristic of W-wave band, uses microstrip line substitutional resistance to complete feedback circuit.For second and third, the tube core feedback model of level Four, this what influence of noise is the most little, the source feedback model of the first order, and the first order is maximum to influence of noise, is mainly more focused on reduction noise.
As shown in Figure 5, Figure 6, the connection good in order to ensure Circuits and Systems ground, this chip is provided with aperture at middle part, and this front, aperture is 80um, and aperture, the back side is 150um, and the aperture model of this gradient can make the more preferable ground connection of chip, reduces the inductance of parasitism simultaneously.
The above is only preferred implementation of the present utility model, it is noted that this utility model is not limited to aforesaid way, and on the premise of without departing from this utility model principle, moreover it is possible to improve further, these improvement also should be regarded as protection domain of the present utility model.
Claims (4)
1. a W-wave band high performance low noise amplifier, including chip, it is characterized in that, described chip is 4 grades of amplifier chips, receive for signal, its a size of 3000 × 2000 × 100 μm, chip is provided with input stage circuit, output-stage circuit, drain terminal biasing circuit, grid end biasing circuit, first order intermediate circuit, second level intermediate circuit, third level intermediate circuit, fourth stage intermediate circuit, source feedback, constitutes signal path；Drain terminal biasing circuit, grid end biasing circuit connect input stage circuit respectively, and input stage circuit connects intermediate circuit, reconnect output-stage circuit；Source feedback connects intermediate circuit at different levels respectively.
A kind of W-wave band high performance low noise amplifier the most according to claim 1, it is characterized in that, the biasing of described drain terminal includes the first electric capacity, the second electric capacity, the 3rd electric capacity, the first resistance, the second resistance, the 4th electric capacity, the 5th electric capacity, the 3rd resistance and the 4th resistance；4th electric capacity and the 5th electric capacity are high frequency decoupling capacitor；The grid end biasing of described chip includes the 6th electric capacity, the 7th electric capacity, the 8th electric capacity and the 9th electric capacity, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance, the tenth resistance, the 11st resistance, and the 8th electric capacity and the 9th electric capacity are high frequency decoupling capacitor.
A kind of W-wave band high performance low noise amplifier the most according to claim 1, it is characterised in that without lamped elements such as capacitance resistances on the signal path of described chip, uses the microstrip line without the different live widths at turning to mate intermediate circuit at different levels.
A kind of W-wave band high performance low noise amplifier the most according to claim 1, it is characterised in that described chip is provided with conical through-hole, this front, aperture is 80um, aperture, the back side is 150um, connects tow sides by through hole, with ensure systematically with the good connection of radio circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620348457.6U CN205545159U (en) | 2016-04-22 | 2016-04-22 | W - wave band high performance low -noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620348457.6U CN205545159U (en) | 2016-04-22 | 2016-04-22 | W - wave band high performance low -noise amplifier |
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| Publication Number | Publication Date |
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| CN205545159U true CN205545159U (en) | 2016-08-31 |
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| CN201620348457.6U Active CN205545159U (en) | 2016-04-22 | 2016-04-22 | W - wave band high performance low -noise amplifier |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108832898A (en) * | 2018-08-14 | 2018-11-16 | 四川益丰电子科技有限公司 | A kind of high-performance GaAs octupler of X-band to W-waveband |
| CN109474242A (en) * | 2018-09-26 | 2019-03-15 | 安徽矽芯微电子科技有限公司 | A kind of millimeter wave amplifier circuit in low noise |
| CN111835292A (en) * | 2020-06-23 | 2020-10-27 | 泰新半导体(南京)有限公司 | Circuit and method for eliminating high-frequency self-excitation of microwave amplifier |
-
2016
- 2016-04-22 CN CN201620348457.6U patent/CN205545159U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108832898A (en) * | 2018-08-14 | 2018-11-16 | 四川益丰电子科技有限公司 | A kind of high-performance GaAs octupler of X-band to W-waveband |
| CN109474242A (en) * | 2018-09-26 | 2019-03-15 | 安徽矽芯微电子科技有限公司 | A kind of millimeter wave amplifier circuit in low noise |
| CN111835292A (en) * | 2020-06-23 | 2020-10-27 | 泰新半导体(南京)有限公司 | Circuit and method for eliminating high-frequency self-excitation of microwave amplifier |
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| GR01 | Patent grant |