CN108306623A - Low-noise amplifier - Google Patents
Low-noise amplifier Download PDFInfo
- Publication number
- CN108306623A CN108306623A CN201710026217.3A CN201710026217A CN108306623A CN 108306623 A CN108306623 A CN 108306623A CN 201710026217 A CN201710026217 A CN 201710026217A CN 108306623 A CN108306623 A CN 108306623A
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- CN
- China
- Prior art keywords
- transistor
- low
- noise amplifier
- circuit
- inductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
Abstract
The invention discloses a kind of low-noise amplifier, including amplifier basic circuit and bypass circuit, the amplifier basic circuit includes inlet circuit and circuit of output terminal；The bypass circuit includes pass-transistor and shunt capacitance；The source electrode of the pass-transistor is electrically connected with the inlet circuit, the drain electrode of the pass-transistor is electrically connected with one end of the shunt capacitance, the other end of the shunt capacitance is electrically connected with the circuit of output terminal, the grid of the pass-transistor is equipped with Bypass Control voltage, and the Bypass Control voltage is used to control the open and close of the pass-transistor.Low-noise amplifier provided by the invention, bypass circuit is added, during low-noise amplifier concrete application, if input signal is sufficiently large, not needing enhanced processing receiving terminal can identify, low-noise amplifier can be switched to bypass mode to save energy at this time；To achieve the effect that reduce power consumption.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of low-noise amplifier.
Background technology
Low-noise amplifier is typically used as the high frequency or intermediate-frequency preamplifier and highly sensitive of all kinds of radio receivers
The amplifying circuit for spending electron detection equipment, is especially widely used in based mobile communication facility, such as transceiver channel radio
Letter card, tower amplifier, combiner, repeater and distal end/digital radio broadband headend etc..
When traditional low-noise amplifier is arranged in based mobile communication facility, when low-noise amplifier is in opening state
Output signal is generated when state, after being used to amplify input signal to use for reception system；When low-noise amplifier is closed, use
It is isolated in by input terminal and reception system, input signal can not be obtained by receiving system at this time.So in order to ensure reception system
Normal work, low-noise amplifier must be constantly in open state, this there is the larger problem of whole system power consumption.Especially
It is larger when input signal, needs not move through the amplification of low-noise amplifier, can exist when reception system can identify apparent
The problem of power wastage.
Invention content
The technical problem to be solved by the present invention is in order to overcome the defect that low-noise amplifier power consumption is larger in the prior art,
A kind of low-noise amplifier that can reduce power consumption is provided.
The present invention is to solve above-mentioned technical problem by following technical proposals：
A kind of low-noise amplifier, feature are, including amplifier basic circuit and bypass circuit, the amplifier base
This circuit includes inlet circuit and circuit of output terminal；The bypass circuit includes pass-transistor and shunt capacitance；The side
The source electrode of road transistor is electrically connected with the inlet circuit, one end of the drain electrode and the shunt capacitance of the pass-transistor
Electrical connection, the other end of the shunt capacitance are electrically connected with the circuit of output terminal, and the grid of the pass-transistor is equipped with
Bypass Control voltage, the Bypass Control voltage are used to control the open and close of the pass-transistor.
In the present solution, amplifier basic circuit is conventional amplifier circuit in low noise.When input signal is smaller, need through
When receiving terminal could identify after amplification, low-noise amplifier needs to be operated in amplification mode, and Bypass Control voltage is arranged at this time and is
Zero so that pass-transistor turns off, so that bypass circuit does not influence the enlarging function of low-noise amplifier, low noise amplification
Input signal amplification can be improved the quality of output end signal by device.It needs not move through enhanced processing when input signal is sufficiently large and connects
When receiving end can identify, it is made to be more than the threshold voltage of pass-transistor by the way that Bypass Control voltage is arranged so that bypass is brilliant
Body pipe is connected, and input signal is directly exported through bypass circuit to circuit of output terminal at this time, is used for receipt of subsequent end.Amplify at this time
Other circuits of device basic circuit are closed, and entire low-noise amplifier works in bypass mode, avoids output end
The problem of signal too conference causes late-class circuit to be saturated and can not work normally, significantly reduce entire low-noise amplifier
Power consumption.
Preferably, the inlet circuit includes signal input part, input terminal inductance and input end capacitor, the input terminal
One end of inductance is connected to the signal input part, and one end of the other end and the input end capacitor of the input terminal inductance is electrically connected
It connects；The circuit of output terminal includes signal output end, output end inductance and output capacitor, a termination of the output end inductance
Enter supply voltage, the other end of the output end inductance is electrically connected with one end of the output capacitor, the output capacitor
Another be connected to the signal output end.
Preferably, the other end and the input end capacitor of the source electrode of the pass-transistor with the input terminal inductance
One end electrical connection.
Preferably, the source electrode of the pass-transistor is electrically connected with the other end of the input end capacitor.
Preferably, the other end of the shunt capacitance, the other end of the output end inductance and the output capacitor
One end electrical connection.
Preferably, the another of the shunt capacitance is connected to the signal output end.
In the present invention there are many connection types of bypass circuit, according to the input and output impedance of physical circuit when concrete application
Matching demand is selected.
Preferably, the amplifier basic circuit further includes the first transistor, second transistor, first resistor and the first electricity
Sense；The first resistor one end access first control voltage, the other end of the first resistor, the first transistor grid
The other end of pole and the input end capacitor is electrically connected；One end of first inductance is grounded, first inductance it is another
End is electrically connected with the source electrode of the first transistor, and the drain electrode of the first transistor and the source electrode of the second transistor are electrically connected
It connects, the draining of the second transistor, the electrical connection of one end of the other end of the output end inductance, the output capacitor；Institute
State grid access the second control voltage of second transistor.
In the present solution, passing through the voltage value of the first control voltage of setting and the second control voltage so that higher than transistor
Threshold voltage, so that the first transistor and second transistor conducting so that amplifier basic circuit works in amplification mode.
When low-noise amplifier works in bypass mode, by control the first control voltage, it is set to zero, at this time the first transistor
Shutdown so that amplifier basic circuit is in off state, and entire low-noise amplifier runs on bypass mode, to reach province
The effect of electricity.
Preferably, the first transistor is managed for NMOS (N-type Metal-oxide-semicondutor), the second transistor is
NMOS tube.
Preferably, the pass-transistor is NMOS tube.
The positive effect of the present invention is that：Low-noise amplifier provided by the invention, adds bypass circuit, in low noise
During acoustic amplifier concrete application, if input signal is sufficiently large, not needing enhanced processing receiving terminal can identify, at this time
Low-noise amplifier can be switched to bypass mode to save energy；When input signals are small, low-noise amplifier is switched to
Amplification mode improves the sensitivity of receiving terminal to complete enlarging function.Low-noise amplifier provided by the invention can reduce work(
Consumption.
Description of the drawings
Fig. 1 is the circuit diagram of the low-noise amplifier of the embodiment of the present invention 1.
Fig. 2 is the circuit diagram of the low-noise amplifier of the embodiment of the present invention 2.
Fig. 3 is the circuit diagram of the low-noise amplifier of the embodiment of the present invention 3.
Fig. 4 is the circuit diagram of the low-noise amplifier of the embodiment of the present invention 4.
Specific implementation mode
It is further illustrated the present invention below by the mode of embodiment, but does not therefore limit the present invention to the reality
It applies among a range.
Embodiment 1
As shown in Figure 1, a kind of low-noise amplifier, including amplifier basic circuit 1 and bypass circuit 2, wherein amplifier
Basic circuit 1 includes inlet circuit 101, circuit of output terminal 102, the first transistor NMOS1, second transistor NMOS2, first
Resistance RB and the first inductance LS；Inlet circuit 101 includes signal input part Vin, input terminal inductance L1 and input end capacitor CB；
Circuit of output terminal 102 includes signal output end Vout, output end inductance LD and output capacitor CD；Bypass circuit 2 includes bypass
Transistor NMOS3 and shunt capacitance CSW.
In the present embodiment, an end of input terminal inductance L1 is connected to signal input part Vin, the source electrode of pass-transistor NMOS3
It is electrically connected with one end of the other end of input terminal inductance L1 and input end capacitor CB.The drain electrode of pass-transistor NMOS3 and side
One end of road capacitance CSW is electrically connected.Supply voltage, the other end of shunt capacitance CSW, output are accessed in one end of output end inductance LD
One end electrical connection of the other end and output capacitor CD of inductance LD, the another of output capacitor CD is held to be connected to signal output
Hold Vout.The grid of pass-transistor NMOS3 is equipped with Bypass Control voltage Vsw, and Bypass Control voltage Vsw is bypassed for controlling
The open and close of transistor NMOS3.One end access the first control voltage VB of first resistor RB, first resistor RB's is another
The other end electrical connection at end, the grid of the first transistor NMOS1 and input end capacitor CB；One end of first inductance LS is grounded,
The other end of first inductance LS is electrically connected with the source electrode of the first transistor NMOS1, and the drain electrode of the first transistor NMOS1 is brilliant with second
The source electrode of body pipe NMOS2 is electrically connected, the drain electrode of second transistor NMOS2, the other end of output end inductance LD, output capacitor CD
One end electrical connection；The grid of second transistor NMOS2 is connected to the second control voltage Vc.
The low-noise amplifier provided in the present embodiment, compared to traditional low-noise amplifier, which can be with work
Make at " bypass mode ".Conventional low-noise amplifier does not include bypass circuit.Bypass path include pass-transistor NMOS3 and
Shunt capacitance CSW.When low-noise amplifier is operated under amplification mode, Bypass Control voltage Vsw is arranged to zero, and bypass is brilliant
Body pipe NMOS3 is cut off, so that the enlarging function of amplifier is unaffected.When the big device of low noise is operated in bypass mode
When, VB is set as zero, and Bypass Control voltage Vsw is set greater than threshold voltage.Therefore, the first transistor NMOS1 cut-outs, bypass are brilliant
Body pipe NMOS3 is connected, and input signal Vin is bypassed with the loss of very little to Vout.It is noted that in the low of bypass mode
It is much smaller when the power dissipation ratio amplification mode of noise amplifier.Under normal conditions, power consumption of the low-noise amplifier under amplification mode
For milliampere rank, such as 5 milliamperes；And in bypass mode, the power consumption of low-noise amplifier is microampere rank, such as 5 microamperes.Bypass mould
The electric current consumed under formula is about one thousandth under amplification mode to 1 percent.
When low-noise amplifier is applied to receiver system, if input signal is sufficiently large, it need not amplify and also can
When being received machine system identification, low-noise amplifier can be switched to bypass mode to save energy.When input signals are small,
Low-noise amplifier is switched to amplification mode, to improve sensitivity when system receives.
Embodiment 2
As different from Example 1, as shown in Fig. 2, the source electrode of pass-transistor NMOS3 and input end capacitor CB's is another
End electrical connection.
Embodiment 3
As different from Example 1, as shown in figure 3, the other end of shunt capacitance CSW is directly connected to signal output end
Vout。
Embodiment 4
As different from Example 3, as shown in figure 4, the source electrode of pass-transistor NMOS3 and input end capacitor CB's is another
End electrical connection.
It should be noted that the amplifier basic circuit of the present invention is conventional amplifier circuit in low noise, can have more
Kind realization method, embodiment provided by the invention is only one such preferable realization method.
Although specific embodiments of the present invention have been described above, it will be appreciated by those of skill in the art that this is only
For example, protection scope of the present invention is to be defined by the appended claims.Those skilled in the art without departing substantially from
Under the premise of the principle and substance of the present invention, many changes and modifications may be made, but these change and
Modification each falls within protection scope of the present invention.
Claims (9)
1. a kind of low-noise amplifier, which is characterized in that including amplifier basic circuit and bypass circuit, the amplifier is basic
Circuit includes inlet circuit and circuit of output terminal；The bypass circuit includes pass-transistor and shunt capacitance；The bypass
The source electrode of transistor is electrically connected with the inlet circuit, the drain electrode of the pass-transistor and one end electricity of the shunt capacitance
Connection, the other end of the shunt capacitance are electrically connected with the circuit of output terminal, and the grid of the pass-transistor is equipped with side
Road controls voltage, and the Bypass Control voltage is used to control the open and close of the pass-transistor.
2. low-noise amplifier as described in claim 1, which is characterized in that the inlet circuit include signal input part,
One end of input terminal inductance and input end capacitor, the input terminal inductance is connected to the signal input part, the input terminal inductance
The other end be electrically connected with one end of the input end capacitor；The circuit of output terminal includes signal output end, output end inductance
And supply voltage is accessed in output capacitor, one end of the output end inductance, the other end of the output end inductance with it is described defeated
One end of output capacitance is electrically connected, and the another of the output capacitor is connected to the signal output end.
3. low-noise amplifier as claimed in claim 2, which is characterized in that the source electrode of the pass-transistor and the input
Hold one end electrical connection of the other end and the input end capacitor of inductance.
4. low-noise amplifier as claimed in claim 2, which is characterized in that the source electrode of the pass-transistor and the input
Hold the other end electrical connection of capacitance.
5. low-noise amplifier as claimed in claim 2, which is characterized in that the other end of the shunt capacitance, the output
Hold one end electrical connection of the other end and the output capacitor of inductance.
6. low-noise amplifier as claimed in claim 2, which is characterized in that the another of the shunt capacitance is connected to the letter
Number output end.
7. low-noise amplifier as claimed in claim 2, which is characterized in that the amplifier basic circuit further includes the first crystalline substance
Body pipe, second transistor, first resistor and the first inductance；One end access the first control voltage of the first resistor, described the
The other end of the other end of one resistance, the grid of the first transistor and the input end capacitor is electrically connected；Described first
One end of inductance is grounded, and the other end of first inductance is electrically connected with the source electrode of the first transistor, the first crystal
The drain electrode of pipe is electrically connected with the source electrode of the second transistor, the draining of the second transistor, the output end inductance it is another
One end electrical connection of one end, the output capacitor；Grid access the second control voltage of the second transistor.
8. low-noise amplifier as claimed in claim 7, which is characterized in that the first transistor is NMOS tube, described the
Two-transistor is NMOS tube.
9. such as low-noise amplifier described in any item of the claim 1 to 8, which is characterized in that the pass-transistor is
NMOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710026217.3A CN108306623A (en) | 2017-01-13 | 2017-01-13 | Low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710026217.3A CN108306623A (en) | 2017-01-13 | 2017-01-13 | Low-noise amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108306623A true CN108306623A (en) | 2018-07-20 |
Family
ID=62872377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710026217.3A Pending CN108306623A (en) | 2017-01-13 | 2017-01-13 | Low-noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108306623A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729973A (en) * | 2019-09-16 | 2020-01-24 | 广东工业大学 | HEMT low noise amplifier bypass structure |
| CN113422583A (en) * | 2021-06-08 | 2021-09-21 | 锐石创芯（深圳）科技有限公司 | Low-noise amplification circuit, radio frequency front-end module and control method |
| CN113708732A (en) * | 2021-09-06 | 2021-11-26 | 芯灵通(天津)科技有限公司 | Low-noise amplifier |
| WO2023160431A1 (en) * | 2022-02-22 | 2023-08-31 | 锐石创芯(深圳)科技股份有限公司 | Low-noise amplification circuit and radio-frequency front-end module |
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| JP2003078370A (en) * | 2001-09-04 | 2003-03-14 | Hitachi Ltd | Gain variable amplifier circuit and receiver and transmitter using the same |
| JP2006279745A (en) * | 2005-03-30 | 2006-10-12 | Matsushita Electric Ind Co Ltd | Low noise amplifier with variable gain |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729973A (en) * | 2019-09-16 | 2020-01-24 | 广东工业大学 | HEMT low noise amplifier bypass structure |
| CN113422583A (en) * | 2021-06-08 | 2021-09-21 | 锐石创芯（深圳）科技有限公司 | Low-noise amplification circuit, radio frequency front-end module and control method |
| CN113708732A (en) * | 2021-09-06 | 2021-11-26 | 芯灵通(天津)科技有限公司 | Low-noise amplifier |
| CN113708732B (en) * | 2021-09-06 | 2024-04-05 | 芯灵通(天津)科技有限公司 | Low noise amplifier |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20191022 Address after: 201203, room 4, building 3000, 406 East Dragon Road, Shanghai, Pudong New Area Applicant after: Shanghai Wei Le Microelectronics Co. Ltd. Applicant after: Shanghai Muju Microelectronics Co., Ltd Address before: 201203, room 4, building 3000, 406 East Dragon Road, Shanghai, Pudong New Area Applicant before: Shanghai Wei Le Microelectronics Co. Ltd. |
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| TA01 | Transfer of patent application right |