CN102122921A - Radio frequency low-noise amplifier - Google Patents
Radio frequency low-noise amplifier Download PDFInfo
- Publication number
- CN102122921A CN102122921A CN2010100226955A CN201010022695A CN102122921A CN 102122921 A CN102122921 A CN 102122921A CN 2010100226955 A CN2010100226955 A CN 2010100226955A CN 201010022695 A CN201010022695 A CN 201010022695A CN 102122921 A CN102122921 A CN 102122921A
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- oxide
- metal
- radio frequency
- inductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
The invention relates to a radio frequency low-noise amplifier which comprises a differential amplifier circuit, wherein the differential amplifier circuit comprises a first MOS (metal oxide semiconductor) and a second MOS; the grid electrodes of the first MOS and the second MOS are respectively connected with a differential radio frequency input end through a first blocking capacitor, a first inductor, a second blocking capacitor and a second inductor; the source electrodes of the first MOS and the second MOS are respectively grounded through a third inductor and a fourth inductor; the drain electrodes of the first MOS and the second MOS are respectively connected with a VDD (virtual device driver) through a fifth inductor and a sixth inductor; a first supplement capacitor and a second supplement capacitor are respectively bridged between the grid electrodes and the source electrodes of the first MOS and the second MOS; the drain electrode of the first MOS and the drain electrode of the second MOS are respectively connected with a differential radio frequency output end; and the differential radio frequency output end is directly connected with a mixer. The radio frequency low-noise amplifier has higher linearity and voltage margin.
Description
Technical field
The present invention relates to the wireless communication receiver system, particularly be used for the radio frequency low-noise amplifier of wireless receiver front end.
Background technology
In recent years,, many wireless communications products have been used in the daily life, for example 900MHz gsm mobile telephone, 1.9GHz PCS PCS Personal Communications System and 2.4GHz Bluetooth communication product etc. along with the development of radio frequency integrated circuit technology is rapid.Radio frequency low-noise amplifier (LNA, RF Low Noise Amplifier) is the pith of wireless receiver module front end in these products.Its effect is that the small-signal that receives by antenna is amplified, so that the subsequent module of receiver is handled.Because low noise amplifier is a whole receiver except antenna, also be the module of handling wireless signal in the whole system at first simultaneously, its performance is for whole receiver, even whole system has very important influence.Therefore, every index of raising low noise amplifier is very necessary.The major parameter of describing the low noise amplifier performance has: positive magnification, input matching degree, output matching degree, reverse isolation degree, power consumption, the linearity and noise factor.Because interrelated, the mutual restriction of these parameters, therefore the overall performance that adopts which kind of compromise proposal to improve low noise amplifier has become the main difficult point of design.At for example application number is in 02811481.7 the Chinese patent application, and a kind of low noise amplifier just is provided, and therefrom can also find more information relevant with radio frequency low-noise amplifier.
According to the investigation to domestic and international research, the low noise amplifier of cascodes is a kind of circuit structure of the low noise amplifier that is widely adopted.As shown in Figure 1, be a kind of low noise amplifier of cascodes, adopt the structure of differential-input differential output.Difference radio-frequency input signals (radio frequency input 1 and radio frequency input 2) is input to the grid of metal-oxide-semiconductor 16 and metal-oxide-semiconductor 17 respectively by inductance 14 and inductance 15, and the source electrode of metal-oxide-semiconductor 16 and metal-oxide-semiconductor 17 connects inductance 22 and inductance 23 respectively, drain electrode connects the source electrode of metal-oxide-semiconductor 18 and metal-oxide-semiconductor 19 respectively, constitutes the difference cascode structure.And the grid of metal-oxide-semiconductor 18 and metal-oxide-semiconductor 19 meets bias voltage Vb2, and drain electrode is received on the VDD by inductance 20 and inductance 21, and the difference output end of low noise amplifier also is connected to the drain electrode of metal-oxide-semiconductor 18 and the drain electrode of metal-oxide-semiconductor 19 respectively.The equal ground connection of the other end of inductance 22 and inductance 23.In described structure, metal-oxide-semiconductor 16, metal-oxide-semiconductor 17, metal-oxide-semiconductor 18 and metal-oxide-semiconductor 19 are the active devices that are used to amplify.Inductance 22 and inductance 23 are respectively applied for and produce a real part resistance, make two inputs and the Antenna Impedance Matching of difference radio-frequency input signals.Inductance 14 and inductance 15 be respectively applied for the resonance frequency of the input circuit of low noise amplifier be tuned on the carrier frequency of input radio frequency signal.Inductance 20 and inductance 21 are respectively applied for the tuning and impedance matching of the output loop of low noise amplifier.Adopt the amplifier of described differential configuration relatively good to the inhibition degree of common-mode noise.
Yet, as previously mentioned, need consider its overall performance to the design of low noise amplifier.Aforesaid reverse isolation degree just is meant that circuit is for the resistivity that feeds back to the bad signal of circuit input end from output.The reverse isolation degree is good more, and input is subjected to the influence of output feedback also just more little.And amplifier has a linear dynamic range, and in this scope, the power output of amplifier increases with input power is linear.Along with the continuation of input power increases, amplifier enters the saturation region gradually, and power gain begins to descend, and the input power value defined when dropping to gain than the low 1dB of linear gain usually is the 1dB compression point of input power, represents with P1dB.And the described linearity is good more, and the 1dB compression point of power output is also big more, and the performance of amplifier is also good more.
Find by analysis above-mentioned amplifier circuit in low noise structure, metal-oxide-semiconductor 18 and metal-oxide-semiconductor 19 have been isolated the parasitic capacitance between the leakage-grid of metal-oxide-semiconductor 16 and metal-oxide-semiconductor 17 and the transmission path of difference radio frequency output respectively, thereby increased the reverse isolation degree of low noise amplifier, but, because the increase of any metal-oxide-semiconductor all can increase the non-linear factor of low noise amplifier, thereby the linearity of low noise amplifier that makes of metal-oxide-semiconductor 18 and metal-oxide-semiconductor 19 reduces.And the existence of metal-oxide-semiconductor 18 and metal-oxide-semiconductor 19 makes that also adding all voltage in metal-oxide-semiconductor 16 and metal-oxide-semiconductor 17 two ends reduces, and makes the voltage margin of low noise amplifier also reduce.
Summary of the invention
The invention provides a kind of radio frequency low-noise amplifier and a kind of radiofrequency signal receiving system, solve the low problem of the prior art radio frequency low-noise amplifier linearity and voltage margin.
For addressing the above problem, the invention provides a kind of radio frequency low-noise amplifier, comprise differential amplifier circuit and bias set circuti, described differential amplifier circuit comprises: first metal-oxide-semiconductor and second metal-oxide-semiconductor, the grid of the grid of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is respectively by first capacitance, first inductance and second capacitance, second inductance links to each other with the difference rf inputs, the source electrode of the source electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is respectively by the 3rd inductance and the 4th inductance ground connection, the drain electrode of the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is connected to VDD by the 5th inductance and the 6th inductance respectively, and the drain electrode of the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor links to each other with the difference radio-frequency (RF) output end respectively; Described bias set circuti is used for providing bias voltage to first metal-oxide-semiconductor of differential amplifier circuit and second metal-oxide-semiconductor.
Optionally, described bias set circuti comprises: current source, the 3rd metal-oxide-semiconductor and first resistance; The drain and gate of described the 3rd metal-oxide-semiconductor is connected to VDD by current source, source ground; One end of described first resistance links to each other with the grid of described the 3rd metal-oxide-semiconductor, and the other end links to each other with first metal-oxide-semiconductor of described differential amplifier circuit and the grid of second metal-oxide-semiconductor.
Optionally, described differential amplifier circuit also comprises first electric capacity, described first electric capacity be connected across between the drain electrode of the VDD and first metal-oxide-semiconductor after the 5th inductance is in parallel.
Optionally, described differential amplifier circuit also comprises second electric capacity, described second electric capacity be connected across between the drain electrode of the VDD and second metal-oxide-semiconductor after the 6th inductance is in parallel.
Optionally, between the grid of described first metal-oxide-semiconductor and source electrode also cross-over connection have first to replenish electric capacity.
Optionally, between the grid of described second metal-oxide-semiconductor and source electrode also cross-over connection have second to replenish electric capacity.
The present invention also provides a kind of radiofrequency signal receiving system, comprise radio frequency low-noise amplifier and frequency mixer, described radio frequency low-noise amplifier comprises differential amplifier circuit and bias set circuti, described frequency mixer links to each other with the output of radio frequency low-noise amplifier, described differential amplifier circuit comprises: first metal-oxide-semiconductor and second metal-oxide-semiconductor, the grid of the grid of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is respectively by first capacitance, first inductance and second capacitance, second inductance links to each other with the difference rf inputs, the source electrode of the source electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is respectively by the 3rd inductance and the 4th inductance ground connection, the drain electrode of the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is connected to VDD by the 5th inductance and the 6th inductance respectively, and the drain electrode of the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor links to each other with the difference radio-frequency (RF) output end respectively; Described bias set circuti is used for providing bias voltage to first metal-oxide-semiconductor of differential amplifier circuit and second metal-oxide-semiconductor.
Optionally, described bias set circuti comprises: current source, the 3rd metal-oxide-semiconductor and first resistance; The drain and gate of described the 3rd metal-oxide-semiconductor is connected to VDD by current source, source ground; One end of described first resistance links to each other with the grid of described the 3rd metal-oxide-semiconductor, and the other end links to each other with first metal-oxide-semiconductor of described differential amplifier circuit and the grid of second metal-oxide-semiconductor.
Optionally, between the grid of described first metal-oxide-semiconductor and source electrode also cross-over connection have first to replenish electric capacity.
Optionally, between the grid of described second metal-oxide-semiconductor and source electrode also cross-over connection have second to replenish electric capacity.
Compared with prior art, above-mentioned disclosed radio frequency low-noise amplifier and radiofrequency signal receiving system have the following advantages: the radio frequency low-noise amplifier in above-mentioned disclosed radio frequency low-noise amplifier and the radiofrequency signal receiving system inputs to radio frequency output from radio frequency and only passes through the one-level metal-oxide-semiconductor, thereby make radio frequency low-noise amplifier be subjected to the non-linear effects of metal-oxide-semiconductor less, improved the linearity of radio frequency low-noise amplifier.
And the radio frequency low-noise amplifier in above-mentioned disclosed radio frequency low-noise amplifier and the radiofrequency signal receiving system also only passes through the one-level metal-oxide-semiconductor from VDD to the DC channel between the ground, thereby has improved the voltage margin of radio frequency low-noise amplifier.
Further, the possibility of the radio frequency low-noise amplifier in above-mentioned disclosed radio frequency low-noise amplifier and the radiofrequency signal receiving system between the grid of described first metal-oxide-semiconductor and second metal-oxide-semiconductor and source electrode also cross-over connection additional electric capacity is arranged, thereby increased the negative feedback of radio frequency low-noise amplifier input stage, further improved the linearity of radio frequency low-noise amplifier.
Description of drawings
Fig. 1 is a prior art radio frequency low-noise amplifier circuit diagram;
Fig. 2 is a radiofrequency signal receiving system schematic diagram of the present invention;
Fig. 3 is a kind of execution mode circuit diagram of radio frequency low-noise amplifier of the present invention;
Fig. 4 is the another kind of execution mode circuit diagram of radio frequency low-noise amplifier of the present invention;
Fig. 5 is the input circuit small-signal equivalent circuit figure of radio frequency low-noise amplifier shown in Figure 4.
Embodiment
Radio frequency low-noise amplifier in radio frequency low-noise amplifier of the present invention and the radiofrequency signal receiving system inputs to radio frequency output from radio frequency and only passes through the one-level metal-oxide-semiconductor, thereby make radio frequency low-noise amplifier be subjected to the non-linear effects of metal-oxide-semiconductor less, improved the linearity of radio frequency low-noise amplifier.And, also only pass through the one-level metal-oxide-semiconductor from VDD to the DC channel between the ground, thereby improved the voltage margin of radio frequency low-noise amplifier.
With reference to shown in Figure 2, radiofrequency signal receiving system of the present invention comprises radio frequency low-noise amplifier 1 and frequency mixer 2, and described radio frequency low-noise amplifier 1 receives the difference radio-frequency input signals, and the difference radio-frequency input signals is amplified back output; The difference radio frequency output signal of described frequency mixer 2 received RF low noise amplifiers 1 output, and after Frequency mixing processing, export mixer output signal.
In conjunction with Fig. 2, shown in Figure 3, a kind of execution mode of described radio frequency low-noise amplifier comprises: received RF signal, and the differential amplifier circuit that radiofrequency signal is amplified; And the bias set circuti that bias voltage is provided to differential amplifier circuit.
Described bias set circuti comprises: current source 100, the 3rd metal-oxide-semiconductor 110 and first resistance 120, the drain and gate of described the 3rd metal-oxide-semiconductor 110 is connected to VDD by current source, source ground, one end of described first resistance 120 links to each other with the grid of described the 3rd metal-oxide-semiconductor 110, and the other end links to each other with first metal-oxide-semiconductor 160 of described differential amplifier circuit and the grid of second metal-oxide-semiconductor 170.
Described differential amplifier circuit comprises: first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170, the grid of the grid of described first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 is respectively by first capacitance 260, first inductance 140 and second capacitance 270, second inductance 150 links to each other with the difference rf inputs, the source electrode of the source electrode of described first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 is respectively by the 3rd inductance 220 and the 4th inductance 230 ground connection, the drain electrode of the drain electrode of described first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 is connected to VDD by the 5th inductance 200 and the 6th inductance 210 respectively, and the drain electrode of the drain electrode of described first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 160 links to each other with the difference radio-frequency (RF) output end respectively.Wherein, described difference radio-frequency (RF) output end directly links to each other with frequency mixer 2, because frequency mixer 2 is a high input-impedance stage, thereby the reverse isolation degree is better.
With reference to shown in Figure 4, described radio frequency low-noise amplifier also comprises, also cross-over connection has first to replenish capacitor C gs1 between the grid of described first metal-oxide-semiconductor 160 and source electrode.
Also cross-over connection has second to replenish capacitor C gs2 between the grid of described second metal-oxide-semiconductor 170 and source electrode.
Described differential amplifier circuit also comprises first electric capacity 240, described first electric capacity 240 be connected across between the drain electrode of the VDD and first metal-oxide-semiconductor 160 after the 5th inductance 200 is in parallel.
Described differential amplifier circuit also comprises second electric capacity 250, described second electric capacity 250 be connected across between the drain electrode of the VDD and second metal-oxide-semiconductor 170 after the 6th inductance 210 is in parallel.
Be described in detail for each part of described radio frequency low-noise amplifier circuit below in conjunction with Fig. 4, so that described radio frequency low-noise amplifier is clearer.
For bias set circuti, first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 of described bias set circuti and differential amplifier circuit can be distinguished equivalent proportional current source.Like this, described bias set circuti just can recently make first metal-oxide-semiconductor 160 or second metal-oxide-semiconductor 170 obtain suitable bias voltage by the size of regulating the 3rd metal-oxide-semiconductor 110 and first metal-oxide-semiconductor 160 or second metal-oxide-semiconductor 170.
Wherein, the effect of the current source 100 of described bias set circuti is to provide a definite electric current to the 3rd metal-oxide-semiconductor 110, the structure of described current source 100 can adopt known current source structure, the employing of the structure of current source should be considered the factor of power consumption and matching two aspects, following only clearer to make for example to the restrictive condition of the structure of current source 100, but be not to limit in order to the structure to current source 100.For example, the output current of described current source 100 can get first metal-oxide-semiconductor 160 operating current 1/10 to 1/5, so, just can select the suitable current source structure according to the output current of described current source 100.
And the effect of described first resistance 120 has 2 points: the first is shunted by described bias set circuti to the radio-frequency input signals of first metal-oxide- semiconductor 160 or 170 transmission of second metal-oxide-semiconductor in order to prevent the difference rf inputs, thereby causes the loss of signal; It two is in order to prevent the issuable noise of described bias set circuti to first metal-oxide-semiconductor 160 or the transmission of second metal-oxide-semiconductor 170, thereby influences circuit performance.Therefore, it is enough big that the resistance of first resistance 120 is wanted, and the resistance of described first resistance 120 requires to determine that for example concerning the input matching network of 50 Ω, the resistance of first resistance 120 can be 1-10k Ω according to the impedance of the input matching network of amplifier.
For differential amplifier circuit, described differential amplifier circuit, amplifies the difference radio-frequency input signals after first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 provide bias voltage at described bias set circuti, and output difference radio frequency output signal.
Wherein, first inductance 140 and second inductance 150 be respectively applied for the resonance frequency of the input circuit of low noise amplifier be tuned on the carrier frequency of input radio frequency signal, and be respectively applied for and produce an imaginary part resistance, make two inputs and the Antenna Impedance Matching of difference radio-frequency input signals.And first capacitance 260 and second capacitance 270 utilize the characteristic every the logical friendship of value of electric capacity, and effect is in order to prevent that radio-frequency input signals from influencing the bias voltage of first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170.The effect of first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 is after receiving the bias voltage that bias set circuti provides, radio-frequency input signals amplified, and the radiofrequency signal of output after amplifying.And the bias voltage of described first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 is by the power consumption decision of amplifier.The 3rd inductance 220 and the 4th inductance 230 are respectively applied for and produce a real part resistance, make two inputs and the Antenna Impedance Matching of difference radio-frequency input signals.The 5th inductance 200 and the 6th inductance 210 are respectively applied for the tuning and impedance matching of the output loop of low noise amplifier.And, the 5th inductance 200 and first electric capacity 240, and the 6th inductance 210 and second electric capacity 250 also constitutes resonant tank respectively, makes the impedance of output loop increase, thereby makes the gain of whole amplifier circuit increase.And described between the grid and source electrode of first metal-oxide-semiconductor 160, and be in order to increase the input negative feedback at the grid of described second metal-oxide-semiconductor 170 and the additional capacitor C gs between the source electrode, thereby the linearity of amplifier further improved.
And, should consider to choose the correspondingly-sized hour of noise factor under the power constraint condition of amplifier to the design of above-mentioned first metal-oxide-semiconductor 160, second metal-oxide-semiconductor 170.And the design of the 5th inductance 200 and first electric capacity 240 or the 6th inductance 210 and second electric capacity 250 should be considered following factors: the 5th inductance 200 and the 6th inductance 210 should mainly be considered the factor of Amplifier Design area, and the design of first electric capacity 240 and second electric capacity 250 should be considered and the resonance factor of late-class circuit under operating frequency.And the 3rd inductance 220 and the 4th inductance 230 should be considered linearity of amplifier degree and two factors of input impedance.
Below in conjunction with small-signal equivalent circuit shown in Figure 5 the designing requirement that replenishes capacitor C gs is further described.Perform an analysis with radio frequency input 1 to radio frequency output 1, see into from radio frequency input 1, first metal-oxide-semiconductor 160 and the 3rd inductance 220 can equivalence one-tenth equivalent electric circuit as shown in Figure 5, the wherein C among Fig. 5
Gs, tBe the equivalent grid, source parasitic capacitance and first of first metal-oxide-semiconductor 160 replenish capacitor C gs1's and, V
GsBe the gate source voltage of first metal-oxide-semiconductor 160, g
mBe mutual conductance, i
gBe grid current, ro is the equivalent output resistance of first metal-oxide-semiconductor 160.Because i
g＜＜g
mV
Gs, ro is generally very big, then input impedance Z
InObtain with reference to following formula:
In the formula, s=j ω.ω is the operating angle frequency.
Therefore as input impedance Z
InDesigning requirement after, just can obtain C according to above-mentioned formula
Gs, tAnd C
Gs, tAs previously mentioned, be that the equivalent grid, source parasitic capacitance and first of first metal-oxide-semiconductor 160 replenish capacitor C gs1 sum, because equivalent grid, the source parasitic capacitance of first metal-oxide-semiconductor 160 are by the size decision of first metal-oxide-semiconductor 160, thereby, C
Gs, tValue determined that first value of replenishing capacitor C gs1 has also just been determined.And concerning the difference channel structure, for the requirement of matching, second size of replenishing capacitor C gs2 is generally replenished the big or small identical of capacitor C gs1 with first.
The course of work to differential amplifier circuit is described further below: when radiofrequency signal behind difference rf inputs input difference amplifying circuit, the bias voltage that first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 provide at bias set circuti is issued to the corresponding work point, after first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 receive radio-frequency input signals, first metal-oxide-semiconductor 160 and second metal-oxide-semiconductor 170 just amplify radio-frequency input signals on described working point, and export frequency mixer 2 to by the radiofrequency signal that will drain after will amplifying.
In sum, the radio-frequency (RF) output end of above-mentioned disclosed radio frequency low-noise amplifier directly links to each other with frequency mixer, and frequency mixer is a high input-impedance stage, thereby reverse isolation degree itself is just fine.And radio frequency low-noise amplifier of the present invention inputs to radio frequency output from radio frequency and only passes through the one-level metal-oxide-semiconductor, thereby makes radio frequency low-noise amplifier be subjected to the non-linear effects of metal-oxide-semiconductor less, has improved the linearity of radio frequency low-noise amplifier.And, also only pass through the one-level metal-oxide-semiconductor from VDD to the DC channel between the ground, thereby improved the voltage margin of radio frequency low-noise amplifier.
Further, the possibility of above-mentioned disclosed radio frequency low-noise amplifier between the grid of described first metal-oxide-semiconductor and second metal-oxide-semiconductor and source electrode also cross-over connection additional electric capacity is arranged, thereby increased the negative feedback of radio frequency low-noise amplifier input stage, further improved the linearity of radio frequency low-noise amplifier.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (10)
1. radio frequency low-noise amplifier, comprise differential amplifier circuit and bias set circuti, it is characterized in that, described differential amplifier circuit comprises: first metal-oxide-semiconductor and second metal-oxide-semiconductor, the grid of the grid of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is respectively by first capacitance, first inductance and second capacitance, second inductance links to each other with the difference rf inputs, the source electrode of the source electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is respectively by the 3rd inductance and the 4th inductance ground connection, the drain electrode of the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is connected to VDD by the 5th inductance and the 6th inductance respectively, and the drain electrode of the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor links to each other with the difference radio-frequency (RF) output end respectively; Described bias set circuti is used for providing bias voltage to first metal-oxide-semiconductor of differential amplifier circuit and second metal-oxide-semiconductor.
2. radio frequency low-noise amplifier as claimed in claim 1 is characterized in that, described bias set circuti comprises: current source, the 3rd metal-oxide-semiconductor and first resistance; The drain and gate of described the 3rd metal-oxide-semiconductor is connected to VDD by current source, source ground; One end of described first resistance links to each other with the grid of described the 3rd metal-oxide-semiconductor, and the other end links to each other with first metal-oxide-semiconductor of described differential amplifier circuit and the grid of second metal-oxide-semiconductor.
3. radio frequency low-noise amplifier as claimed in claim 1 is characterized in that described differential amplifier circuit also comprises first electric capacity, described first electric capacity be connected across between the drain electrode of the VDD and first metal-oxide-semiconductor after the 5th inductance is in parallel.
4. radio frequency low-noise amplifier as claimed in claim 1 is characterized in that described differential amplifier circuit also comprises second electric capacity, described second electric capacity be connected across between the drain electrode of the VDD and second metal-oxide-semiconductor after the 6th inductance is in parallel.
5. radio frequency low-noise amplifier as claimed in claim 1 is characterized in that, also cross-over connection has first to replenish electric capacity between the grid of described first metal-oxide-semiconductor and source electrode.
6. radio frequency low-noise amplifier as claimed in claim 1 is characterized in that, also cross-over connection has second to replenish electric capacity between the grid of described second metal-oxide-semiconductor and source electrode.
7. radiofrequency signal receiving system, comprise radio frequency low-noise amplifier and frequency mixer, described radio frequency low-noise amplifier comprises differential amplifier circuit and bias set circuti, described frequency mixer links to each other with the output of radio frequency low-noise amplifier, it is characterized in that, described differential amplifier circuit comprises: first metal-oxide-semiconductor and second metal-oxide-semiconductor, the grid of the grid of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is respectively by first capacitance, first inductance and second capacitance, second inductance links to each other with the difference rf inputs, the source electrode of the source electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is respectively by the 3rd inductance and the 4th inductance ground connection, the drain electrode of the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor is connected to VDD by the 5th inductance and the 6th inductance respectively, and the drain electrode of the drain electrode of described first metal-oxide-semiconductor and second metal-oxide-semiconductor links to each other with the difference radio-frequency (RF) output end respectively; Described bias set circuti is used for providing bias voltage to first metal-oxide-semiconductor of differential amplifier circuit and second metal-oxide-semiconductor.
8. radiofrequency signal receiving system as claimed in claim 7 is characterized in that, described bias set circuti comprises: current source, the 3rd metal-oxide-semiconductor and first resistance; The drain and gate of described the 3rd metal-oxide-semiconductor is connected to VDD by current source, source ground; One end of described first resistance links to each other with the grid of described the 3rd metal-oxide-semiconductor, and the other end links to each other with first metal-oxide-semiconductor of described differential amplifier circuit and the grid of second metal-oxide-semiconductor.
9. radiofrequency signal receiving system as claimed in claim 7 is characterized in that, also cross-over connection has first to replenish electric capacity between the grid of described first metal-oxide-semiconductor and source electrode.
10. radiofrequency signal receiving system as claimed in claim 7 is characterized in that, also cross-over connection has second to replenish electric capacity between the grid of described second metal-oxide-semiconductor and source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100226955A CN102122921A (en) | 2010-01-08 | 2010-01-08 | Radio frequency low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100226955A CN102122921A (en) | 2010-01-08 | 2010-01-08 | Radio frequency low-noise amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102122921A true CN102122921A (en) | 2011-07-13 |
Family
ID=44251398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010100226955A Pending CN102122921A (en) | 2010-01-08 | 2010-01-08 | Radio frequency low-noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102122921A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102497336A (en) * | 2011-11-29 | 2012-06-13 | 北京华力创通科技股份有限公司 | Differential signal bypass collecting device and method |
| CN103795351A (en) * | 2012-10-31 | 2014-05-14 | 深圳市南方硅谷微电子有限公司 | Receiver radio frequency front-end circuit and low noise amplifier |
| CN103825624A (en) * | 2014-03-20 | 2014-05-28 | 嘉兴创德电子有限公司 | Superregenerative receiver and signal processing method for superregenerative receiver |
| CN108023556A (en) * | 2013-03-11 | 2018-05-11 | 华为技术有限公司 | Improved radio frequency low-noise amplifier load circuit |
| CN112187183A (en) * | 2020-10-14 | 2021-01-05 | 成都振芯科技股份有限公司 | Broadband low-noise amplifier with differential structure |
| CN113708732A (en) * | 2021-09-06 | 2021-11-26 | 芯灵通(天津)科技有限公司 | Low-noise amplifier |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030080815A1 (en) * | 2001-10-25 | 2003-05-01 | Broadcom Corporation | Current-controlled CMOS wideband data amplifier circuits |
| TW200735522A (en) * | 2006-03-01 | 2007-09-16 | Princeton Technology Corp | Single-end input to differential-ends output low noise amplifier |
| CN101465620A (en) * | 2007-12-19 | 2009-06-24 | 中国科学院微电子研究所 | Radio frequency buffering amplifying circuit |
-
2010
- 2010-01-08 CN CN2010100226955A patent/CN102122921A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030080815A1 (en) * | 2001-10-25 | 2003-05-01 | Broadcom Corporation | Current-controlled CMOS wideband data amplifier circuits |
| TW200735522A (en) * | 2006-03-01 | 2007-09-16 | Princeton Technology Corp | Single-end input to differential-ends output low noise amplifier |
| CN101465620A (en) * | 2007-12-19 | 2009-06-24 | 中国科学院微电子研究所 | Radio frequency buffering amplifying circuit |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102497336A (en) * | 2011-11-29 | 2012-06-13 | 北京华力创通科技股份有限公司 | Differential signal bypass collecting device and method |
| CN103795351A (en) * | 2012-10-31 | 2014-05-14 | 深圳市南方硅谷微电子有限公司 | Receiver radio frequency front-end circuit and low noise amplifier |
| CN108023556A (en) * | 2013-03-11 | 2018-05-11 | 华为技术有限公司 | Improved radio frequency low-noise amplifier load circuit |
| CN103825624A (en) * | 2014-03-20 | 2014-05-28 | 嘉兴创德电子有限公司 | Superregenerative receiver and signal processing method for superregenerative receiver |
| CN103825624B (en) * | 2014-03-20 | 2017-01-18 | 嘉兴创德电子有限公司 | Superregenerative receiver and signal processing method for superregenerative receiver |
| CN112187183A (en) * | 2020-10-14 | 2021-01-05 | 成都振芯科技股份有限公司 | Broadband low-noise amplifier with differential structure |
| CN113708732A (en) * | 2021-09-06 | 2021-11-26 | 芯灵通(天津)科技有限公司 | Low-noise amplifier |
| CN113708732B (en) * | 2021-09-06 | 2024-04-05 | 芯灵通(天津)科技有限公司 | Low noise amplifier |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101282110B (en) | Low-power consumption single-ended input difference output low-noise amplifier | |
| US8175566B2 (en) | Multiple multi-mode low-noise amplifier receiver with shared degenerative inductors | |
| EP2456068B1 (en) | Low-noise amplifier with impedance boosting circuit | |
| CN102497167B (en) | Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation | |
| CN101420203B (en) | Low-noise amplifier circuit | |
| CN103117711B (en) | Monolithic integrated radio frequency high-gain low-noise amplifier | |
| CN102361435B (en) | Variable gain broadband low-noise amplifier | |
| CN106712725A (en) | Ultra wideband high-gain low noise amplifier based on monolithic microwave integrated circuit | |
| CN103401514B (en) | Low-noise amplifier | |
| CN103532497B (en) | A kind of ultra-wideband low-noise amplifier using inductance compensation technology | |
| CN103248324A (en) | High-linearity low-noise amplifier | |
| CN102084589B (en) | Method of achieving high selectivity in receiver RF front-ends | |
| CN101777877A (en) | Wide band radio-frequency low noise amplifier with single-ended input and differential output | |
| CN103117712B (en) | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier | |
| CN102394572B (en) | High-linearity low noise amplifier and design method thereof | |
| CN102790593A (en) | Parallel-resistance feedback differential low-noise amplifier | |
| CN102122921A (en) | Radio frequency low-noise amplifier | |
| CN109167578B (en) | Ultra-wideband low-noise amplifier with active inductor | |
| US20080136521A1 (en) | Method and system for a low power fully differential noise cancelling low noise amplifier | |
| CN204697010U (en) | Wideband low noise amplifier | |
| CN100461620C (en) | Differential superimposed RF CMOS low noise amplifier | |
| CN102332877A (en) | Differential complementary metal oxide semiconductor (CMOS) multimode low-noise amplifier with on-chip active Balun | |
| CN213027963U (en) | Anti-mismatch low-noise amplifier of 5G communication WIFI platform | |
| CN116094468B (en) | Low noise amplifier and ultra-wideband receiver | |
| CN110995183A (en) | Self-adaptive linear heterojunction bipolar transistor power amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110713 |