CN111917382A - Low-noise amplifier based on active inductor with noise elimination function - Google Patents
Low-noise amplifier based on active inductor with noise elimination function Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
Abstract
To a low noise amplifier based on an active inductor with noise cancellation comprising: the suspension active inductance circuit forms an active radio frequency small signal input matching network with a suspension inductance effect by utilizing 2 differential amplifiers; the seventh transistor Q7 is used for dividing the output signal of the suspension active inductance circuit into two paths of feed-forward mixed signals with the same phase and the opposite phase of the inherent noise of the circuit; the cascade amplification circuit is used for amplifying in-phase input signals in the feedforward mixed signals and mutually offsetting reverse phase noises; the first single-ended voltage controllable active inductance circuit is used as an active inductive load of the cascode amplification circuit; and the second single-ended voltage controllable active inductance circuit is used as an inductive feedback network of the cascode amplifying circuit and is used for inhibiting high-frequency harmonic interference and intermodulation. The application avoids the defects of large occupied device area, high cost, inconvenience for integration and the like of the on-chip passive inductor.
Description
Technical Field
The invention relates to the field of integrated circuit design, in particular to a low-noise amplifier based on an active inductor with noise elimination.
Background
With the progress of society and the development of scientific technology, communication technology is also rapidly developed. Wireless communication systems are becoming increasingly popular due to their high degree of flexibility and mobility.
A low noise amplifier, which has a very important circuit for amplifying a signal while suppressing noise interference to improve system sensitivity, is often disposed in a front end for a wireless communication receiving system. When designing a low noise amplifier, it is required to have a proper gain, high linearity, and good input/output matching with respect to an antenna or a filter, in addition to noise reduction.
Inductors have found wide application in radio frequency integrated circuits, including impedance matching, low noise amplifiers, radio frequency power amplifiers, mixers, VCOs, and the like. The design of the inductor is a difficult problem faced by the current radio frequency integrated circuit. The performance of the inductor generally determines the overall performance of the impedance matching circuit, low noise amplifier, and rf power amplifier, and the performance of the product generally improves as the inductive performance increases. Therefore, improving the overall performance of the inductor is an important aspect of the present rf integrated circuit. Moore's law states that the trend in integrated circuits is to continue to decrease in size. For the on-chip inductor, the size is very difficult to be reduced, and the on-chip passive inductor has the defects of low Q value, large area, high cost and inconvenience for integration. In order to solve the problem, an inductor with better performance is obtained, and an equivalent inductor formed by active devices becomes a new problem in the field of radio frequency integrated circuits at present.
Disclosure of Invention
In view of the above, the present invention has been developed to provide a low noise amplifier based on an active inductor with noise cancellation that overcomes or at least partially solves the above-mentioned problems.
According to an aspect of the present invention, there is provided a low noise amplifier based on an active inductor with noise cancellation, comprising: the suspension active inductance circuit is based on the principle of an active gyrator circuit, and forms an active radio frequency small signal input matching network with a suspension inductance effect by utilizing 2 differential amplifiers DF1 and DF2 which can improve the common mode rejection ratio and reduce the interference noise of the circuit; the seventh transistor Q7 is used for dividing the output signal of the suspension active inductance circuit into two paths of feed-forward mixed signals with the same phase and the opposite phase of the inherent noise of the circuit; the cascode amplification circuit is used for amplifying in-phase input signals in the feedforward mixed signal of the seventh transistor Q7 and offsetting opposite-phase noise, so that interference noise is further reduced, and the input and output isolation is improved; the first single-ended voltage controllable active inductance circuit is used as an active inductive load of the cascode amplification circuit; and the second single-ended voltage controllable active inductance circuit is used as an inductive feedback network of the cascode amplifying circuit and is used for suppressing high-frequency harmonic interference and intermodulation products.
According to one possible design, the floating active inductive circuit comprises in particular: a first differential amplifier DF1 composed of a first transistor Q1, a second transistor Q2, a first resistor R1, a second resistor R2 and a fifth transistor R5, and a second differential amplifier DF2 composed of a third transistor Q3, a fourth transistor Q4, a third resistor R3, a fourth resistor R4 and a sixth transistor Q6; in the first differential amplifier DF1, a drain terminal of the first transistor Q1 is connected to a first voltage terminal Vc through a first resistor R1, a drain terminal of the second transistor Q2 is connected to the first voltage terminal Vc through a second resistor R2, a drain terminal of the fifth transistor Q5 is connected to a source terminal of the first transistor Q1 and to a source terminal of the second transistor Q2, a source terminal of the fifth transistor Q5 is grounded, a gate terminal of the fifth transistor Q5 is connected to a first bias voltage terminal Vb1, and a gate terminal of the first transistor Q1 is connected to a signal Input terminal Input; in the second differential amplifier DF2, the drain terminal of the third transistor Q3 is connected to the first voltage terminal Vc through a third resistor R3, the drain terminal of the fourth transistor Q4 is connected to the first voltage terminal Vc through a fourth resistor R4, the drain terminal of the sixth transistor Q6 is connected to the source terminal of the third transistor Q3 and to the source terminal of the fourth transistor Q4, a source terminal of the sixth transistor Q6 is grounded, a gate terminal of the sixth transistor Q6 is connected to a second bias voltage terminal Vb2, a gate terminal of the third transistor Q3 is connected to a drain terminal of the second transistor Q2, the drain terminal of the third transistor Q3 is also connected to the gate terminal of the second transistor Q2, the drain terminal of the fourth transistor Q4 is also connected to the gate terminal of the first transistor Q1, the gate terminal of the fourth pass transistor Q4 is connected to the drain terminal of the first transistor Q1.
According to one possible design, the gate terminal of the seventh transistor Q7 is connected to the seventh bias voltage terminal Vb _ Q7, the drain terminal of the seventh transistor Q7 is connected to the first voltage terminal Vc through a fifth resistor R5 to form a common-gate amplification circuit, the source terminal of the seventh transistor Q7 is connected to the drain terminal of the third transistor Q3, and the drain terminal and the source terminal of the seventh transistor are further connected to two input terminals of the cascode amplification circuit, respectively.
According to one possible design, the cascode amplification circuit includes a ninth transistor Q9, a tenth transistor Q10, and an eighth transistor Q8, the drain terminals of the ninth transistor Q9 and the tenth transistor Q10 are both connected to the source terminal of the eighth transistor Q8, the source terminals of the ninth transistor Q9 and the tenth transistor Q10 are both connected to the second single-ended voltage-controllable active inductor circuit, the gate terminal of the ninth transistor Q9 serves as a first input terminal, the gate terminal of the tenth transistor Q10 serves as a second input terminal, the ninth transistor Q9 and the tenth transistor Q10 are used to amplify the in-phase input signal and cancel out the anti-phase noise; the gate of the eighth transistor Q8 is connected to an eighth bias voltage terminal Vb _ Q8, and the drain of the eighth transistor Q8 is connected to the Output of the first single-ended voltage-controlled active inductor circuit to form a signal Output terminal Output.
According to one possible design, the gate terminal of the ninth transistor Q9 is connected as a first input terminal to the drain terminal of the seventh transistor Q7, and the gate terminal of the tenth transistor Q10 is connected as a second input terminal to the source terminal of the seventh transistor Q7.
According to one possible design, the first single-ended voltage controllable active inductor circuit comprises an eleventh transistor Q11, a twelfth transistor Q12, a thirteenth transistor Q13, a fourteenth transistor Q14, a fifteenth transistor Q15 and a sixth resistor R6, the eleventh transistor 11 has a gate terminal connected to an eleventh bias voltage Vb _ Q11, the fourteenth transistor Q14 has a gate terminal connected to a fourteenth bias voltage terminal Vb _ Q14, the eleventh transistor Q11 has a source terminal connected to the gate terminal of the twelfth transistor Q12, the eleventh transistor Q11 has a drain terminal connected to one terminal of the sixth resistor R6 and to a drain terminal of the twelfth transistor Q12 and to a drain terminal of the thirteenth transistor Q13, the sixth resistor R6 has another terminal connected to a first voltage terminal Vc, the thirteenth transistor Q13 has a drain terminal connected to a drain terminal of the fourteenth transistor Q14 and to a drain terminal of the fifteenth transistor Q15, a source terminal of the thirteenth transistor Q13 is connected to the first voltage terminal Vc, a gate terminal of the fifteenth transistor Q15 is connected to a fifteenth bias voltage terminal Vb _ Q15, a source terminal of the fifteenth transistor Q15 is connected to the first voltage terminal Vc, a source terminal of the twelfth transistor Q12 and a source terminal of the fourteenth transistor Q14 are connected to each other to form an output terminal of the first single-ended voltage-controllable active inductor circuit, and the thirteenth transistor Q13 and the fourteenth transistor Q14 are biased by a constant current provided by the fifteenth transistor Q15.
According to one possible design, the second single-ended voltage-controllable active inductor circuit includes a sixteenth transistor Q16, a seventeenth transistor Q17, an eighteenth transistor Q18, a nineteenth transistor Q19, a twentieth transistor Q20 and a seventh resistor R7, a gate terminal of the sixteenth transistor Q16 is connected to a sixteenth bias voltage terminal Vb _ Q16, a gate terminal of the nineteenth transistor Q19 is connected to a nineteenth bias voltage terminal Vb _ Q19, a drain terminal of the sixteenth transistor Q16 is connected to a gate terminal of the seventeenth transistor Q17, a source terminal of the sixteenth transistor Q16 is connected to one terminal of the seventh resistor R7 and to a drain terminal of the seventeenth transistor Q17 and to a drain terminal of the eighteenth transistor Q18, a further terminal of the seventh resistor R7 is connected to ground, a drain terminal of the eighteenth transistor Q18 is connected to the first voltage terminal Vc, a source terminal of the eighteenth transistor Q18 is connected to a nineteenth source terminal of the nineteenth transistor Q19 and to the twentieth transistor Q19, and the twe The drain terminal of the transistor Q20 is connected, the gate terminal of the twentieth transistor Q20 is connected to the twentieth bias voltage terminal Vb _ Q20, the source terminal of the twentieth transistor Q20 is grounded, the source terminal of the seventeenth transistor Q17 is connected to the drain terminal of the nineteenth transistor Q19 to form the output terminal of the second single-ended voltage-controllable active inductor circuit, and the eighteenth transistor Q18 and the nineteenth transistor Q19 are biased by supplying a constant current through the Q20.
The radio frequency device LNA realized by the process technologies of LDMOS, GaAs or GaN and the like adopts the same process to realize the active inductance, replaces the spiral structure of a metal conductor designed on a substrate, realizes the elimination of the parasitic capacitance and resistance loss caused by the spiral structure, simultaneously eliminates the defects of large occupied device area, high cost, inconvenience for integration and the like of the passive inductance on the chip, and simultaneously can realize the adjustable inductance by adjusting the bias of a transistor in the active inductance circuit through a peripheral control circuit. Meanwhile, the loss of the resistor can be compensated by utilizing the active characteristic of the transistor circuit, so that the Q value is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a low noise amplifier based on an active inductor with noise cancellation according to an embodiment of the present invention;
fig. 2 is an equivalent schematic diagram of a floating active inductor circuit according to an embodiment of the present invention;
fig. 3 is an equivalent schematic diagram of a first single-ended voltage controllable active inductor circuit according to an embodiment of the present invention;
fig. 4 is an equivalent schematic diagram of a second single-ended voltage controllable active inductor circuit according to an embodiment of the present invention;
fig. 5 is an equivalent schematic diagram of a low noise amplifier based on an active inductor with noise cancellation according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The terms "comprises" and "comprising," and any variations thereof, in the present description and claims and drawings are intended to cover a non-exclusive inclusion, such as a list of steps or elements.
The invention designs a low-noise amplifier based on a novel active inductor, which is used in the current radio frequency front-end system.
The technical solution of the present invention is further described in detail with reference to the accompanying drawings and embodiments.
Referring to fig. 1 to 5, an embodiment of the present invention provides a low noise amplifier based on an active inductor with noise cancellation, including:
the suspension active inductance circuit 1 is based on the principle of an active gyrator circuit, and forms an active radio frequency small signal input matching network with a suspension inductance effect by utilizing 2 differential amplifiers DF1 and DF2 which can improve the common mode rejection ratio and reduce the interference noise of the circuit.
And a seventh transistor Q7, configured to divide the output signal of the floating active inductor circuit 1 into two feed-forward mixed signals with the same phase and the opposite phase of the inherent noise of the circuit.
And the cascode amplifying circuit 2 is used for amplifying the in-phase input signal in the feedforward mixed signal of the seventh transistor Q7 and canceling out the anti-phase noise, so that the interference noise is further reduced, and the isolation of the input and the output is improved.
And the first single-ended voltage controllable active inductance circuit 3 is used as an active inductive load of the cascode amplification circuit 2.
And the second single-ended voltage controllable active inductance circuit 4 is used as an inductive feedback network of the cascode amplification circuit 2 and used for suppressing high-frequency harmonic interference and intermodulation products.
In one example, the floating active inductive circuit 1 specifically includes:
a first differential amplifier DF1 composed of a first transistor Q1, a second transistor Q2, a first resistor R1, a second resistor R2 and a fifth transistor R5, and a second differential amplifier DF2 composed of a third transistor Q3, a fourth transistor Q4, a third resistor R3, a fourth resistor R4 and a sixth transistor Q6.
In the first differential amplifier DF1, a drain terminal of the first transistor Q1 is connected to a first voltage terminal Vc through a first resistor R1, a drain terminal of the second transistor Q2 is connected to the first voltage terminal Vc through a second resistor R2, a drain terminal of the fifth transistor Q5 is connected to a source terminal of the first transistor Q1 and to a source terminal of the second transistor Q2, a source terminal of the fifth transistor Q5 is grounded, a gate terminal of the fifth transistor Q5 is connected to a first bias voltage terminal Vb1, and a gate terminal of the first transistor Q1 is connected to a signal Input terminal Input.
In the second differential amplifier DF2, the drain terminal of the third transistor Q3 is connected to the first voltage terminal Vc through a third resistor R3, the drain terminal of the fourth transistor Q4 is connected to the first voltage terminal Vc through a fourth resistor R4, the drain terminal of the sixth transistor Q6 is connected to the source terminal of the third transistor Q3 and to the source terminal of the fourth transistor Q4, a source terminal of the sixth transistor Q6 is grounded, a gate terminal of the sixth transistor Q6 is connected to a second bias voltage terminal Vb2, a gate terminal of the third transistor Q3 is connected to a drain terminal of the second transistor Q2, the drain terminal of the third transistor Q3 is also connected to the gate terminal of the second transistor Q2, the drain terminal of the fourth transistor Q4 is also connected to the gate terminal of the first transistor Q1, the gate terminal of the fourth pass transistor Q4 is connected to the drain terminal of the first transistor Q1.
In one example, a gate terminal of a seventh transistor Q7 is connected to a seventh bias voltage terminal Vb _ Q7 to form a common-gate amplification circuit, a drain terminal of the seventh transistor Q7 is connected to the first voltage terminal Vc through a fifth resistor R5, a source terminal of the seventh transistor Q7 is connected to a drain terminal of the third transistor Q3, and a drain terminal and a source terminal of the seventh transistor are further connected to two input terminals of the cascode amplification circuit, respectively.
In one example, the cascode amplification circuit 2 includes a ninth transistor Q9, a tenth transistor Q10, and an eighth transistor Q8, drain terminals of the ninth transistor Q9 and the tenth transistor Q10 are both connected to a source terminal of the eighth transistor Q8, source terminals of the ninth transistor Q9 and the tenth transistor Q10 are both connected to the second single-ended voltage-controllable active inductor circuit, a gate terminal of the ninth transistor Q9 serves as a first input terminal, and a gate terminal of the tenth transistor Q10 serves as a second input terminal. The ninth transistor Q9 and the tenth transistor Q10 are used to amplify the in-phase input signal and cancel out the anti-phase noise.
The gate of the eighth transistor Q8 is connected to an eighth bias voltage terminal Vb _ Q8, and the drain of the eighth transistor Q8 is connected to the Output of the first single-ended voltage-controlled active inductor circuit to form a signal Output terminal Output. The transistor Q7 divides an input signal into two paths of in-phase feedforward signals which are fed into the gates of the transistors Q9 and Q10 respectively, the transistors Q9, Q10 and Q8 form a cascade amplifying circuit which is amplified to form a cascade amplifying circuit, noise is suppressed, and the input signal is amplified at an output end OUT; meanwhile, due to the fact that the noise generated by the Q7 is amplified through the difference of the Q9 and the Q10, the opposite phase related noise voltages generated by the gates of the Q9 and the Q10 are mutually offset at the source of the Q8, and therefore the noise reduction effect is achieved.
Illustratively, the gate terminal of the ninth transistor Q9 is connected as a first input terminal to the drain terminal of the seventh transistor Q7, and the gate terminal of the tenth transistor Q10 is connected as a second input terminal to the source terminal of the seventh transistor Q7.
The cascade circuit forms a two-stage small-signal low-noise amplification circuit, provides the optimal input and output isolation degree, reduces the influence of interelectrode capacitance, and simultaneously enables noise signals of a front stage to be mutually offset at a rear stage through reasonable design of bias of Q7, thereby eliminating input noise.
In one example, the first single-ended voltage controllable active inductor circuit 3 includes an eleventh transistor Q11, a twelfth transistor Q12, a thirteenth transistor Q13, a fourteenth transistor Q14, a fifteenth transistor Q15, and a sixth resistor R6. A gate terminal of the eleventh transistor 11 and a gate terminal of the fourteenth transistor Q14 are both connected to a bias voltage, a source terminal of the eleventh transistor Q11 is connected to a gate terminal of the twelfth transistor Q12, a drain terminal of the eleventh transistor Q11 is connected to one terminal of a sixth resistor R6, to a drain terminal of the twelfth transistor Q12, and to a gate terminal of the thirteenth transistor Q13, the other terminal of the sixth resistor R6 is connected to a first voltage terminal Vc, a drain terminal of the thirteenth transistor Q13 is connected to a drain terminal of the fourteenth transistor Q14, and to a drain terminal of the fifteenth transistor Q15, a source terminal of the thirteenth transistor Q13 is connected to the first voltage terminal Vc, a gate terminal of the fifteenth transistor Q15 is connected to a fifteenth bias voltage terminal Vb _ Q15, a source terminal of the fifteenth transistor Q15 is connected to the first voltage terminal Vc, a source terminal of the twelfth transistor Q12 and a source terminal of the fourteenth transistor Q14 are connected to each other to form an Output terminal of the first single-ended voltage-controllable active inductor circuit, that is, a drain terminal of the eighth transistor Q8, a source terminal of the twelfth transistor Q12, and a source terminal of the fourteenth transistor Q14 are connected to each other to form a signal Output terminal Output. Wherein the thirteenth transistor Q13 and the fourteenth transistor Q14 are biased by a constant current provided by the fifteenth transistor Q15, the transistor Q11 is an active controllable varistor operating in a linear region, and the channel resistance is determined by the gate voltage. Q13, Q14 constitute the return circuit that has the noise reduction effect, and Q13, Q14 connect in the form of differential pair, have shunted the noise current that is produced by Q11 and Q12 to greatly reduced the noise that the equivalent active inductance produced, dispose appropriately, can bypass the noise, in order to avoid noise and amplifying circuit Q8, Q9 and Q10 to produce the coupling. Illustratively, the gate terminal of the eleventh transistor 11 is connected to the eleventh bias voltage terminal Vb _ Q11, and the gate terminal of the fourteenth transistor Q14 is connected to the fourteenth bias voltage terminal Vb _ Q11.
In one example, the second single-ended voltage controllable active inductor circuit 4 includes a sixteenth transistor Q16, a seventeenth transistor Q17, an eighteenth transistor Q18, a nineteenth transistor Q19, a twentieth transistor Q20, and a seventh resistor R7. A gate terminal of the sixteenth transistor Q16 is connected to a sixteenth bias voltage terminal Vb _ Q16, a gate terminal of the nineteenth transistor Q19 is connected to a nineteenth bias voltage terminal Vb _ Q19, a drain terminal of the sixteenth transistor Q16 is connected to a gate terminal of the seventeenth transistor Q17, a source terminal of the sixteenth transistor Q16 is connected to one terminal of the seventh resistor R7, to a drain terminal of the seventeenth transistor Q17, to a gate terminal of the eighteenth transistor Q18, the other terminal of the seventh resistor R7 is grounded, a drain terminal of the eighteenth transistor Q18 is connected to the first voltage terminal Vc, a source terminal of the eighteenth transistor Q18 is connected to a source terminal of the nineteenth transistor Q19, to a drain terminal of the twentieth transistor Q20, a gate terminal of the twentieth transistor Q20 is connected to a twentieth bias voltage terminal Vb _ Q20, and a source terminal of the twentieth transistor Q20 is grounded, the source terminal of the seventeenth transistor Q17 and the drain terminal of the nineteenth transistor Q19 are connected to each other to form the output terminal of the second single-ended voltage-controllable active inductor circuit, and the eighteenth transistor Q18 and the nineteenth transistor Q19 are biased by supplying a constant current through the transistor Q20. Q18, Q19 constitute the return circuit that has the noise reduction effect, and Q18, Q19 connect in the form of differential pair, have shunted the noise current that is produced by Q16 and Q17 to greatly reduced the noise that the equivalent active inductance produced, dispose appropriately, can bypass the noise, in order to avoid noise and amplifying circuit Q8, Q9 and Q10 to produce the coupling.
3-4, Q11/Q16 is equivalent to an active controllable rheostat, the bias voltage is set to enable Q11/Q16 to work in a linear region and determine the channel electricity, the parasitic capacitance of the GS end of Q12/Q17 is utilized to generate the equivalent inductance L of a corresponding alternating small signal to the ground, and the quality factor Q of the L can be calculated by analyzing an alternating small signal equivalent circuit model. The Q13/Q18 and the Q14/Q19 form a noise bypass circuit to reduce the signal coupling of noise to the LNA, so that the noise of active devices is reduced, and the noise performance of the LNA is improved.
As shown IN fig. 5, a weak rf signal is fed from the input terminal IN, passes through the matching network formed by the floating active inductor, and is amplified by the cascode amplifying circuit formed by the transistors Q9, Q10 and Q8 through signal distribution of the transistor Q7, so that noise is suppressed, and the input signal is amplified at the output terminal OUT. The negative feedback network composed of voltage-controlled active inductors adjusts the control quantity of the single-ended active inductor, thereby achieving the purposes of regulating and controlling the stability, gain, linearity, bandwidth and the like of the LNA.
The radio frequency device LNA realized by the process technologies of LDMOS, GaAs or GaN and the like adopts the same process to realize the active inductance, replaces the spiral structure of a metal conductor designed on a substrate, realizes the elimination of the parasitic capacitance and resistance loss caused by the spiral structure, simultaneously eliminates the defects of large occupied device area, high cost, inconvenience for integration and the like of the passive inductance on the chip, and simultaneously can realize the adjustable inductance by adjusting the bias of a transistor in the active inductance circuit through a peripheral control circuit. Meanwhile, the loss of the resistor can be compensated by utilizing the active characteristic of the transistor circuit, so that the Q value is improved.
The above embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, it should be understood that the above embodiments are merely exemplary embodiments of the present invention and are not intended to limit the scope of the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. A low noise amplifier based on an active inductor with noise cancellation, comprising:
the suspension active inductance circuit (1) is based on the active gyrator circuit principle, and forms an active radio frequency small signal input matching network with a suspension inductance effect by utilizing 2 differential amplifiers DF1 and DF2 which can improve the common mode rejection ratio and reduce the interference noise of the circuit;
a seventh transistor Q7, which is used for dividing the output signal of the suspension active inductance circuit (1) into two paths of feed-forward mixed signals with the same phase and the opposite phase of the inherent noise of the circuit;
a cascode amplification circuit (2) for amplifying the in-phase input signal and canceling out the anti-phase noise from the feedforward mixed signal of the seventh transistor Q7, thereby further reducing the interference noise and improving the isolation of the input and output;
a first single-ended voltage controllable active inductor circuit (3) as an active inductive load of the cascode amplification circuit (2);
and the second single-ended voltage controllable active inductance circuit (4) is used as an inductive feedback network of the cascode amplification circuit (2) and is used for suppressing high-frequency harmonic interference and intermodulation products.
2. The low noise amplifier with noise cancellation based on active inductance according to claim 1, characterized in that the floating active inductance circuit (1) comprises in particular:
a first differential amplifier DF1 composed of a first transistor Q1, a second transistor Q2, a first resistor R1, a second resistor R2 and a fifth transistor R5, and a second differential amplifier DF2 composed of a third transistor Q3, a fourth transistor Q4, a third resistor R3, a fourth resistor R4 and a sixth transistor Q6;
in the first differential amplifier DF1, a drain terminal of the first transistor Q1 is connected to a first voltage terminal Vc through a first resistor R1, a drain terminal of the second transistor Q2 is connected to the first voltage terminal Vc through a second resistor R2, a drain terminal of the fifth transistor Q5 is connected to a source terminal of the first transistor Q1 and to a source terminal of the second transistor Q2, a source terminal of the fifth transistor Q5 is grounded, a gate terminal of the fifth transistor Q5 is connected to a first bias voltage terminal Vb1, and a gate terminal of the first transistor Q1 is connected to a signal Input terminal Input;
in the second differential amplifier DF2, the drain terminal of the third transistor Q3 is connected to the first voltage terminal Vc through a third resistor R3, the drain terminal of the fourth transistor Q4 is connected to the first voltage terminal Vc through a fourth resistor R4, the drain terminal of the sixth transistor Q6 is connected to the source terminal of the third transistor Q3 and to the source terminal of the fourth transistor Q4, a source terminal of the sixth transistor Q6 is grounded, a gate terminal of the sixth transistor Q6 is connected to a second bias voltage terminal Vb2, a gate terminal of the third transistor Q3 is connected to a drain terminal of the second transistor Q2, the drain terminal of the third transistor Q3 is also connected to the gate terminal of the second transistor Q2, the drain terminal of the fourth transistor Q4 is also connected to the gate terminal of the first transistor Q1, the gate terminal of the fourth pass transistor Q4 is connected to the drain terminal of the first transistor Q1.
3. The low noise amplifier with noise cancellation based on active inductor according to claim 2, wherein the gate terminal of the seventh transistor Q7 is connected to the seventh bias voltage terminal Vb _ Q7 to form a common gate amplification circuit, the drain terminal of the seventh transistor Q7 is connected to the first voltage terminal Vc through the fifth resistor R5, the source terminal of the seventh transistor Q7 is connected to the drain terminal of the third transistor Q3, and the drain terminal and the source terminal of the seventh transistor are further connected to two input terminals of the cascode amplification circuit (2), respectively.
4. The low noise amplifier with noise cancellation based on active inductor according to claim 3, wherein the cascode amplifying circuit (2) comprises a ninth transistor Q9, a tenth transistor Q10 and an eighth transistor Q8, drain terminals of the ninth transistor Q9 and the tenth transistor Q10 are connected with a source terminal of an eighth transistor Q8, source terminals of the ninth transistor Q9 and the tenth transistor Q10 are connected with the second single-ended voltage controlled active inductor circuit, a gate terminal of the ninth transistor Q9 is used as a first input terminal, a gate terminal of the tenth transistor Q10 is used as a second input terminal, and the ninth transistor Q9 and the tenth transistor Q10 are used for amplifying in-phase input signals and canceling out anti-phase noise;
the gate of the eighth transistor Q8 is connected to an eighth bias voltage terminal Vb _ Q8, and the drain of the eighth transistor Q8 is connected to the Output of the first single-ended voltage-controlled active inductor circuit to form a signal Output terminal Output.
5. The low noise amplifier with noise cancellation based on active inductor according to claim 4, wherein the gate terminal of the ninth transistor Q9 is connected as the first input terminal to the drain terminal of the seventh transistor Q7, and the gate terminal of the tenth transistor Q10 is connected as the second input terminal to the source terminal of the seventh transistor Q7.
6. The low noise amplifier with noise cancellation based on active inductor according to claim 5, wherein the first single-ended voltage controllable active inductor circuit (3) comprises an eleventh transistor Q11, a twelfth transistor Q12, a thirteenth transistor Q13, a fourteenth transistor Q14, a fifteenth transistor Q15 and a sixth resistor R6, the gate terminal of the eleventh transistor 11 is connected with an eleventh bias voltage Vb _ Q11, the gate terminal of the fourteenth transistor Q14 is connected with a fourteenth bias voltage terminal Vb _ Q14, the source terminal of the eleventh transistor Q11 is connected with the gate terminal of the twelfth transistor Q12, the drain terminal of the eleventh transistor Q11 is connected with one end of the sixth resistor R6 and with the drain terminal of the twelfth transistor Q12 and with the gate terminal of the thirteenth transistor Q13, the other end of the sixth resistor R6 is connected with the first voltage terminal Vc, a drain terminal of the thirteenth transistor Q13 is connected to a drain terminal of the fourteenth transistor Q14 and to a drain terminal of the fifteenth transistor Q15, a source terminal of the thirteenth transistor Q13 is connected to the first voltage terminal Vc, a gate terminal of the fifteenth transistor Q15 is connected to a fifteenth bias voltage terminal Vb _ Q15, a source terminal of the fifteenth transistor Q15 is connected to the first voltage terminal Vc, a source terminal of the twelfth transistor Q12 and a source terminal of the fourteenth transistor Q14 are connected to each other to form an output terminal of the first single-ended voltage-controllable active inductor circuit, and the thirteenth transistor Q13 and the fourteenth transistor Q14 are biased by a constant current supplied through the fifteenth transistor Q15.
7. The low noise amplifier based on active inductance with noise cancellation according to claim 5, wherein the second single-ended voltage controllable active inductance circuit (4) comprises a sixteenth transistor Q16, a seventeenth transistor Q17, an eighteenth transistor Q18, a nineteenth transistor Q19, a twentieth transistor Q20 and a seventh resistor R7, the gate terminal of the sixteenth transistor Q16 is connected with a sixteenth bias voltage terminal Vb _ Q16, the gate terminal of the nineteenth transistor Q19 is connected with a nineteenth bias voltage terminal Vb _ Q19, the drain terminal of the sixteenth transistor Q16 is connected with the seventeenth transistor Q17, the source terminal of the sixteenth transistor Q16 is connected with one end of the seventh resistor R7 and with the drain terminal of the seventeenth transistor Q17 and with the gate terminal of the eighteenth transistor Q18, the other end of the seventh resistor R7 is connected with ground, the drain terminal of the eighteenth transistor Q18 is connected to the first voltage terminal Vc, the source terminal of the eighteenth transistor Q18 is connected to the source terminal of the nineteenth transistor Q19 and to the drain terminal of the twentieth transistor Q20, the gate terminal of the twentieth transistor Q20 is connected to the twentieth bias voltage terminal Vb _ Q20, the source terminal of the twentieth transistor Q20 is grounded, the source terminal of the seventeenth transistor Q17 and the drain terminal of the nineteenth transistor Q19 are connected to each other to form the output terminal of the second single-ended voltage-controlled active inductor circuit, and the eighteenth transistor Q18 and the nineteenth transistor Q19 are biased by supplying a constant current through Q20.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112671350A (en) * | 2020-12-28 | 2021-04-16 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112671350A (en) * | 2020-12-28 | 2021-04-16 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
| CN112671350B (en) * | 2020-12-28 | 2022-01-04 | 北京力通通信有限公司 | Low-noise large-bandwidth amplifier |
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